CN106910721A - A kind of diode and its packaging technology flow - Google Patents
A kind of diode and its packaging technology flow Download PDFInfo
- Publication number
- CN106910721A CN106910721A CN201710133539.8A CN201710133539A CN106910721A CN 106910721 A CN106910721 A CN 106910721A CN 201710133539 A CN201710133539 A CN 201710133539A CN 106910721 A CN106910721 A CN 106910721A
- Authority
- CN
- China
- Prior art keywords
- diode
- framework
- chip
- layer
- elargol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000012536 packaging technology Methods 0.000 title claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 claims abstract description 18
- 239000003822 epoxy resin Substances 0.000 claims abstract description 15
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 238000007689 inspection Methods 0.000 claims abstract description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 3
- 244000247747 Coptis groenlandica Species 0.000 claims 3
- 241001062009 Indigofera Species 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 241000218202 Coptis Species 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of diode and its packaging technology flow, it is packaged using white epoxy resin, it is applied in LED, the light of LED is not absorbed, while improve the luminance of LED, also the phenomenon such as excessive of absorbing heat is reduced, improve diode behavior, the packaging technology flow of the diode includes the steps such as chip assembling, bonding wire, injection, cutting, test, reverse mould, packaging, inspection payment, encapsulated using white epoxy resin, handling process is simpler, makes integrated artistic flow more simple.
Description
Technical field
The present invention relates to electronic component technology field, a kind of diode and its packaging technology flow are specifically disclosed.
Background technology
At present, diode has the advantages that lightweight, small volume, pollutes low, long lifespan, and it is used as a kind of new electronics
Element, is applied to each field more and more, the requirement more and more higher in industrial production to diode behavior.
Often using the epoxy resin of black, the packaging body of the diode produced is black to traditional diode, should
Use in LED, absorb the light of a large amount of LEDs, so as to reduce the luminance of LED, reduce the performance of LED, temperature
Degree is larger to the performance impact of diode, and the working junction temperature of diode is generally -55~150 DEG C, and the epoxy resin of black is easy
Heat absorption, easily make diode exceed working junction temperature so that diode behavior reduction or can produce be heated it is uneven etc. bad
Phenomenon.The performance of diode is often depending on diode package technological process, and (transient state suppresses two poles to good TVS diode
Pipe), ESD diode encapsulation be capable of the chip of protection diode, internal plastic packaging wrapping and encapsulating defence radiation, aqueous vapor, oxygen and
External force is destroyed, and the reliability between component is improved, so as to lift TVS diode (Transient Suppression Diode), ESD, LED diodes
Performance.
The content of the invention
Based on this, it is necessary to for prior art problem, there is provided a kind of diode and its packaging technology flow, the pole of this kind two
Pipe and its packaging technology flow make the packaging body of diode not extinction by improveing the black epoxy used in flow, carry
While the luminance of diode high, the heat absorption phenomenon such as excessively is also reduced, the performance of diode is improve on the whole.
The present invention discloses a kind of diode, including chip, framework, elargol layer, gold thread, white epoxy resin packaging body, institute
Stating framework includes the first framework and the second framework, and the elargol layer includes the first elargol layer and the second elargol layer, the white ring
Oxygen tree fat packaging body is wrapped in first framework, first elargol layer, the gold thread, second elargol being sequentially connected
Layer, second framework.
Preferably, it is provided with SMD pin on the framework.
Preferably, one layer of blue film is provided with the SMD pin.
Invention additionally discloses a kind of packaging technology flow of the diode, comprise the following steps：
(1) chip assembling：The parameter of thimble, suction nozzle, suction, adjustment chip and the framework with SMD pin are adjusted according to chip
Position, then chip is sticked together with framework using elargol；
(2) bonding wire：Bonding wire parameter, pulling force parameter, bank processing procedure are adjusted according to chip, using gold thread by chip and framework
Weld together, form a galvanic circle；
(3) it is molded：It is wrapped in using white epoxy resin and has been assembled and the good chip of bonding wire carries out injection molding packaging；
(4) cut：The framework that multiple is linked together cuts into diode independent one by one by way of cutting；
(5) test：The inspection of photoelectric parameter, appearance and size is carried out to the diode that encapsulation is finished using separator, according to setting
Requirement diode is divided into different classes of diode, electrically bad diode is rejected, and dispense into different regions
It is interior；
(6) reverse mould：Fall one layer of blue film to the surface of the framework of diode as needed；
(7) pack：Print the information such as model, date on the diode as needed, dual-use packaging bag carries out batch package, puts
Enter drier and label and seal；
(8) check and pay：Product is checked, defective work is rejected, is paid.
Beneficial effects of the present invention are：
A kind of diode of the invention, replaces conventionally used black epoxy to encapsulate using white epoxy resin packaging body
Body, so that the diode applications are in LED, the light that LED sends is not absorbed, is heated evenly, makes diode more preferable
Ground improves the stability and luminance of the diode, so as to improve on the whole in a state for normal work
The performance of the diode.
In a kind of packaging technology flow of diode of the invention, replaced using white epoxy resin conventionally used
Black epoxy, the packaging body of the diode produced is white, is applied in LED, and the light of LED is not absorbed,
So as to improve the luminance of LED, temperature is larger to the performance impact of Xiao Te diodes, and the working junction temperature of diode is general
It it is -55~150 DEG C, the heat absorption capacity of the epoxy resin of white does not have black epoxy strong, reduces heat absorption excessively or is heated
The phenomenon such as uneven, makes diode preferably in a state for normal work, diode package technological process is not being produced
On the premise of raw extra cost, the performance of diode is improved on the whole.
In a kind of packaging technology flow of diode of the invention, due to being replaced traditionally using white epoxy resin
The black epoxy for using, is adjusted in packaging technology flow, and traditional two pole is saved in packaging technology flow
Baking process in pipe packaging technology flow, makes handling process more simpler than the diode being made of black epoxy,
So that diode package technological process is simpler.
Brief description of the drawings
Fig. 1 is the structural representation of diode of the invention.
Fig. 2 is the overall schematic of diode of the invention.
Fig. 3 is packaging technology flow figure of the invention.
Reference is：Chip 1, the 2, first framework 3 of the first elargol layer, SMD pin 4, blue film 5, gold thread 6, white ring
Oxygen tree fat packaging body 7, the second elargol layer the 8, second framework 9, elargol layer 10, framework 11.
Specific embodiment
It is specific purposes, the function that can further appreciate that feature of the invention, technological means and reached, with reference to
Accompanying drawing is described in further detail with specific embodiment to invention.
Refer to Fig. 1, Fig. 2：Invent a kind of diode, including chip 1, framework 11, elargol layer 10, gold thread 6, white epoxy
Resin-encapsulated body 7, the framework includes the first framework 3 and the second framework 9, and elargol layer 10 includes the first elargol layer 2 and the
Two elargol layer 8, the white epoxy resin packaging body 7 is wrapped in first framework 3, first elargol layer being sequentially connected
2nd, the gold thread 6, second elargol layer 8, second framework 9.
In a kind of diode of the invention, SMD pin 4 is provided with the framework 11.
In a kind of diode of the invention, one layer of blue film 5 is provided with the SMD pin 4.
Refer to Fig. 3：A kind of packaging technology flow of the diode of the present invention, comprises the following steps：
(1) chip assembling：The parameter of thimble, suction nozzle, suction, adjustment chip and the framework with SMD pin are adjusted according to chip
Position, then chip is sticked together with framework using elargol；
(2) bonding wire：Bonding wire parameter, pulling force parameter, bank processing procedure are adjusted according to chip, using gold thread by chip and framework
Weld together, form a galvanic circle；
(3) it is molded：It is wrapped in using white epoxy resin and has been assembled and the good chip of bonding wire carries out injection molding packaging；
(4) cut：The framework that multiple is linked together cuts into diode independent one by one by way of cutting；
(5) test：The inspection of photoelectric parameter, appearance and size is carried out to the diode that encapsulation is finished using separator, according to setting
Requirement diode is divided into different classes of diode, electrically bad diode is rejected, and dispense into different regions
It is interior；
(6) reverse mould：Fall one layer of blue film to the surface of the framework of diode as needed；
(7) pack：Print the information such as model, date on the diode as needed, dual-use packaging bag carries out batch package, puts
Enter drier and label and seal；
(8) check and pay：Product is checked, defective work is rejected, is paid.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Shield scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (4)
1. a kind of diode, including chip (1), framework (11), elargol layer (10), gold thread (6), white epoxy resin packaging body
(7), the framework (11) includes the first framework (3) and the second framework (9), and the elargol layer includes the first elargol layer (2) and the
Two elargol layer (8), it is characterised in that：The white epoxy resin packaging body (7) is wrapped in first framework being sequentially connected
(3), first elargol layer (2), the gold thread (6), second elargol layer (8), second framework (9).
2. a kind of diode according to claim 1, it is characterised in that：SMD pin is provided with the framework (11)
(4)。
3. a kind of diode according to claim 1, it is characterised in that：One layer of indigo plant is provided with the SMD pin (4)
Film (5).
4. the packaging technology flow of a kind of diode according to claim 1, it is characterised in that：Comprise the following steps：
(1) chip assembling：The parameter of thimble, suction nozzle, suction, adjustment chip and the framework with SMD pin are adjusted according to chip
Position, then chip is sticked together with framework using elargol；
(2) bonding wire：Bonding wire parameter, pulling force parameter, bank processing procedure are adjusted according to chip, using gold thread by chip and framework
Weld together, form a galvanic circle；
(3) it is molded：It is wrapped in using white epoxy resin and has been assembled and the good chip of bonding wire carries out injection molding packaging；
(4) cut：The framework that multiple is linked together cuts into diode independent one by one by way of cutting；
(5) test：The inspection of photoelectric parameter, appearance and size is carried out to the diode that encapsulation is finished using separator, according to setting
Requirement diode is divided into different classes of diode, electrically bad diode is rejected, and dispense into different regions
It is interior；
(6) reverse mould：Fall one layer of blue film to the surface of the framework of diode as needed；
(7) pack：Print the information such as model, date on the diode as needed, dual-use packaging bag carries out batch package, puts
Enter drier and label and seal；
(8) check and pay：Product is checked, defective work is rejected, is paid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710133539.8A CN106910721A (en) | 2017-03-08 | 2017-03-08 | A kind of diode and its packaging technology flow |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710133539.8A CN106910721A (en) | 2017-03-08 | 2017-03-08 | A kind of diode and its packaging technology flow |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106910721A true CN106910721A (en) | 2017-06-30 |
Family
ID=59187288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710133539.8A Pending CN106910721A (en) | 2017-03-08 | 2017-03-08 | A kind of diode and its packaging technology flow |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106910721A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107634135A (en) * | 2017-08-17 | 2018-01-26 | 芜湖晶鑫光电照明有限公司 | A kind of LED lamp panel packaging technology flow |
| CN110572909A (en) * | 2019-09-12 | 2019-12-13 | 山东晶导微电子股份有限公司 | LED lighting circuit and chip packaging structure thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700727A (en) * | 2013-12-27 | 2014-04-02 | 常州银河世纪微电子有限公司 | Method for packaging photoelectric coupler |
| CN104934517A (en) * | 2015-04-28 | 2015-09-23 | 江苏稳润光电有限公司 | Low-thermal-resistance surface mounted LED packaging structure and method |
| CN105061993A (en) * | 2015-07-22 | 2015-11-18 | 江苏中鹏新材料股份有限公司 | Environment-friendly white epoxy molding compound, preparation method therefor and application thereof |
| US20160244604A1 (en) * | 2015-02-20 | 2016-08-25 | Shin-Etsu Chemical Co., Ltd. | White heat-curable epoxy resin composition, optical semiconductor element case made of the white heat-curable epoxy resin composition and optical semiconductor device comprised of the optical semiconductor element |
-
2017
- 2017-03-08 CN CN201710133539.8A patent/CN106910721A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700727A (en) * | 2013-12-27 | 2014-04-02 | 常州银河世纪微电子有限公司 | Method for packaging photoelectric coupler |
| US20160244604A1 (en) * | 2015-02-20 | 2016-08-25 | Shin-Etsu Chemical Co., Ltd. | White heat-curable epoxy resin composition, optical semiconductor element case made of the white heat-curable epoxy resin composition and optical semiconductor device comprised of the optical semiconductor element |
| CN104934517A (en) * | 2015-04-28 | 2015-09-23 | 江苏稳润光电有限公司 | Low-thermal-resistance surface mounted LED packaging structure and method |
| CN105061993A (en) * | 2015-07-22 | 2015-11-18 | 江苏中鹏新材料股份有限公司 | Environment-friendly white epoxy molding compound, preparation method therefor and application thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107634135A (en) * | 2017-08-17 | 2018-01-26 | 芜湖晶鑫光电照明有限公司 | A kind of LED lamp panel packaging technology flow |
| CN110572909A (en) * | 2019-09-12 | 2019-12-13 | 山东晶导微电子股份有限公司 | LED lighting circuit and chip packaging structure thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170630 |
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| RJ01 | Rejection of invention patent application after publication |