CN106910682B - Method for improving optical performance by introducing auxiliary ions into modified Si film - Google Patents

Method for improving optical performance by introducing auxiliary ions into modified Si film Download PDF

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Publication number
CN106910682B
CN106910682B CN201710148341.7A CN201710148341A CN106910682B CN 106910682 B CN106910682 B CN 106910682B CN 201710148341 A CN201710148341 A CN 201710148341A CN 106910682 B CN106910682 B CN 106910682B
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ions
ion
auxiliary
soi
ion implantation
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CN106910682A (en
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王茺
冯晓旭
王荣飞
李东阳
杨杰
杨宇
刘静
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Yunnan University YNU
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Yunnan University YNU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

The invention provides a method for improving optical performance by introducing auxiliary ions into a modified Si film, belonging to the technical field of semiconductor material luminescence. Based on Si ion self-injection technology and rapid thermal annealing technology, the invention generates luminous defects or cluster technology in a Si film on an SOI substrate, firstly adopts a metal vapor vacuum arc ion source ion implanter to carry out ion injection, and respectively injects Si ions and auxiliary ions into an SOI sheet (the top layer is P-type single crystal Si with 200nm thickness and (100) crystal orientation, and the middle layer is SiO with 375nm thickness2The bottom layer is P-type single crystal Si with the thickness of 6.75 mu m), then the SOI is rapidly annealed by a rapid annealing furnace, the auxiliary ions and interstitial Si atoms are promoted to form bonds by adjusting the composite implantation dose and energy of the auxiliary ions and the heat treatment process, so that the exciton fluorescence inactivation energy on the intermediate band is enhanced.

Description

Method for improving optical performance by introducing auxiliary ions into modified Si film
Technical Field
The invention relates to a method for improving optical performance by introducing auxiliary ions into a modified Si film, in particular to a method for preparing a silicon-based luminescent material by adopting an ion implantation technology and a rapid annealing technology, belonging to the technical field of semiconductor material luminescence.
Background
In recent years, the development of silicon-based large-scale optoelectronic integration technology by combining microelectronics and optoelectronics has become a necessity for the development of information technology and a general consensus in the industry. Silicon is the best candidate for implementing opto-electronic integration engineering. Compared with other photoelectric materials, the silicon-based photoelectric material has the characteristics of easy compatibility and integration, and also has the advantages of low cost, high reliability, strong function expansibility and the like; the indirect bandgap properties of silicon have been continuously explored to cause it to emit light.
At present, two basic ideas are provided in the preparation of silicon-based luminescent materials, namely, modifying silicon to enable the silicon to emit light, and preparing a composite luminescent material on a silicon substrate. The modification of materials and the synthesis of composite materials are the basic functions of ion implantation. Factors hindering the application of the defective Si thin film in the field of luminescence are ascribed to three aspects, namely, low luminescence efficiency, slow exciton fluorescence annihilation speed and weak luminescence stability in a high-temperature region. By introducing auxiliary ions (iron, cobalt, nickel and manganese) into the self-ion-implanted Si film, the movement and evolution of generated hole or interstitial point defects in silicon contain abundant physical information, and the high-efficiency luminescence caused by the method has great potential application value for realizing silicon photoelectron integration. Not only opens up a new way for the research of the basic problems of various defect formation mechanisms, luminescence physical mechanisms and the like in silicon, but also lays a foundation for promoting the development of SOI material luminescence technology and realizing room temperature full silicon-based photoelectron integration.
Disclosure of Invention
The invention introduces auxiliary ions to improve the optical performance of the Si film, firstly carries out RCA cleaning on the SOI wafer, and then respectively carries out the auxiliary ions and the Si film by adopting a metal vapor vacuum arc ion source ion implanter+Ion implantation, followed by rapid annealing of SOI with a rapid annealing furnace, characterized by the use of a complex implantation of auxiliary ions and Si ionsThe ion implantation process of (2) and then an annealing process of rapid annealing treatment by using a rapid annealing furnace.
The invention aims to promote the auxiliary ions to form bonds with interstitial Si atoms by adjusting the composite injection dosage and energy of the auxiliary ions and the heat treatment process, thereby enhancing the fluorescence inactivation energy of excitons on the intermediate band, being beneficial to the promotion of the luminescence stability of clusters, improving the luminescence stability of SOI and providing a new method for enhancing the luminescence performance of SOI materials.
The SOI material selected and used in the present invention has a top layer of P-type single crystal Si of 100 crystal orientation having Si thickness of 200nm, purity of 99.999% and resistivity of 10. omega. cm, and an intermediate layer of SiO 375nm thick2And the bottom layer is P-type single crystal Si with the thickness of 675 mu m. SOI structures have special optical properties because of the SiO in such structures2And Si do not have the same refractive index. In addition, the quantum-sized luminescence center is grown in the SOI substrate, and the emission spectrum can be effectively modified.
The preparation method comprises the following steps:
(1) cleaning the SOI substrate by adopting an RCA standard cleaning method;
(2) adopting SRIM software to simulate to obtain optimized implantation energy and implantation dosage;
(3) firstly, Si is implanted by an ion implanter+Implanting ions into the SOI silicon film layer with ion incidence direction 7 ° to the normal of the surface of the SOI silicon film, and performing in vacuum environment+The ion implantation dose is 1 × 1017～3×1017cm-2The implantation energy is 60-80 keV;
(4) carrying out composite injection on a small amount of auxiliary iron, cobalt, nickel and manganese ions on an ion implanter;
(5) the injected sample was cut into 1 × 1cm2And (3) rapidly annealing the injected SOI wafer in a nitrogen environment, wherein the annealing temperature is 500-700 ℃, and the annealing time is 30-60 s.
The invention is to optimize Si+On the basis of the self-implantation SOI material luminescence property, the composite implantation dosage of auxiliary ions is adjustedEnergy and heat treatment process to promote the auxiliary ion to bond with interstitial Si atom and to strengthen the deactivation of exciton fluorescence in the middle band. The method is helpful for improving the temperature stability, thereby achieving the purpose of enhancing the optical performance of the SOI material.
Drawings
FIG. 1 is a technical circuit diagram.
FIG. 2 shows 1: Si ion implantation only, 2: Si and Fe, Si and Co, Si and Ni, Si and Mn ion implantation simultaneously, and P L spectrum at a test temperature of 10K to 250K.
Detailed Description
The invention is further described below by way of examples.
Example 1:
the method for improving the optical performance by introducing auxiliary ions into the modified Si film specifically comprises the following steps:
(1) selecting an SOI (silicon on insulator) sheet of a P-type Si film with a top crystal orientation of (100), and cleaning the SOI sheet by using an RCA (Rolling circle amplification) standard cleaning method;
(2) firstly, Si is implanted by an ion implanter+Implanting ions into the SOI silicon film layer with ion incidence direction 7 ° to the normal of the surface of the SOI silicon film, and performing in vacuum at room temperature+The ion implantation dose is 2 × 1017cm-2The implantation energy is 70 keV;
（3）Si+after ion implantation, iron ions were implanted into the layer at a dose of 1 × 1015cm-2The implantation energy is 70 keV. The ion incidence direction and the normal line of the surface of the SOI silicon film form a 7 DEG angle, and the ion implantation process is carried out in a vacuum room temperature environment;
(4) the injected sample was cut into 1 × 1cm2And (3) carrying out rapid annealing on the implanted SOI wafer in a nitrogen environment, wherein the annealing temperature is 500 ℃, and the annealing time is 60 s.
Example 2:
the step (1), the step (2) and the step (4) are the same as those in the example 1;
the difference of the step (3) is as follows:
Si+ion implantationAfter completion, iron ions were implanted into the layer at a dose of 5 × 1015cm-2The implantation energy is 70 keV.
Example 3:
the step (1), the step (2) and the step (4) are the same as those in the example 1;
the difference of the step (3) is as follows:
Si+after ion implantation, cobalt ions were implanted into the layer at a dose of 1 × 1015cm-2The implantation energy is 70 keV.
Example 4:
the step (1), the step (2) and the step (4) are the same as those in the example 1;
the difference of the step (3) is as follows:
Si+after ion implantation, cobalt ions were implanted into the layer at a dose of 5 × 1015cm-2The implantation energy is 70 keV.
Example 5:
the step (1), the step (2) and the step (4) are the same as those in the example 1;
the difference of the step (3) is as follows:
Si+after ion implantation, nickel ions were implanted into the layer at a dose of 1 × 1015cm-2The implantation energy is 70 keV.
Example 6:
the step (1), the step (2) and the step (4) are the same as those in the example 1;
the difference of the step (3) is as follows:
Si+after ion implantation, nickel ions were implanted into the layer at a dose of 5 × 1015cm-2The implantation energy is 70 keV.
Example 7:
the steps (1), (2) and (3) are the same as those in example 1;
the difference of the step (4) is as follows:
and rapidly annealing the injected SOI wafer in a nitrogen environment, wherein the annealing temperature is 700 ℃, and the annealing time is 60 s.
Example 8:
the steps (1), (2) and (3) are the same as those in example 1;
the difference of the step (4) is as follows:
and rapidly annealing the injected SOI wafer in a nitrogen environment, wherein the annealing temperature is 500 ℃, and the annealing time is 30 s.
Example 9:
the steps (1), (2) and (3) are the same as those in example 3;
the difference of the step (4) is as follows:
and rapidly annealing the injected SOI wafer in a nitrogen environment, wherein the annealing temperature is 700 ℃, and the annealing time is 60 s.
Example 10:
the steps (1), (2) and (3) are the same as those in example 3;
the difference of the step (4) is as follows:
and rapidly annealing the injected SOI wafer in a nitrogen environment, wherein the annealing temperature is 500 ℃, and the annealing time is 30 s.
Example 11:
the steps (1), (2) and (3) are the same as those in example 5;
the difference of the step (4) is as follows:
and rapidly annealing the injected SOI wafer in a nitrogen environment, wherein the annealing temperature is 700 ℃, and the annealing time is 60 s.
Example 12:
the steps (1), (2) and (3) are the same as those in example 5;
the difference of the step (4) is as follows:
and rapidly annealing the injected SOI wafer in a nitrogen environment, wherein the annealing temperature is 500 ℃, and the annealing time is 30 s.

Claims (2)

1. A method for improving optical performance by introducing auxiliary ions into modified Si film includes RCA cleaning of SOI wafer, and ion implantation by metal vapor vacuum arc ion sourceRespectively carrying out auxiliary ion and Si ion implantation, and then carrying out rapid annealing on the SOI by using a rapid annealing furnace, which is characterized in that an ion implantation process of auxiliary ion and Si ion composite implantation is adopted, and then an annealing process of rapid annealing treatment is carried out by using the rapid annealing furnace, wherein in the ion implantation, the auxiliary ions are Co, Ni and Mn ions, the rapid annealing treatment is carried out by the rapid annealing furnace, the annealing temperature is 500-700 ℃, the annealing time is 30-60 s, in the ion implantation, the implantation energy is 60-70 keV, and in the ion implantation, the auxiliary ion implantation dosage is 1 × 1015～1×1016cm-2。
2. The method for improving optical properties of Si thin film according to claim 1, wherein the Si ion implantation dose is 1 × 1017～3×1017cm-2。
CN201710148341.7A 2017-03-14 2017-03-14 Method for improving optical performance by introducing auxiliary ions into modified Si film Expired - Fee Related CN106910682B (en)

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CN107611023B (en) * 2017-08-28 2019-10-25 云南大学 A kind of method that Si improves luminescent properties from ion implanting silica-base material
CN108376729A (en) * 2018-03-27 2018-08-07 云南大学 One kind being based on Fe+/Si+The room temperature luminous device of near-infrared of compound injection SOI materials
CN108962815B (en) * 2018-07-17 2020-09-25 北京工业大学 Preparation method of SOI material
CN111180302A (en) * 2020-01-03 2020-05-19 中国科学院上海光学精密机械研究所 Method for adjusting optical performance of optical element through ion implantation

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