CN111180302A - Method for adjusting optical performance of optical element through ion implantation - Google Patents
Method for adjusting optical performance of optical element through ion implantation Download PDFInfo
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- CN111180302A CN111180302A CN202010005326.9A CN202010005326A CN111180302A CN 111180302 A CN111180302 A CN 111180302A CN 202010005326 A CN202010005326 A CN 202010005326A CN 111180302 A CN111180302 A CN 111180302A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
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Abstract
The invention belongs to the field of optical elements, and particularly relates to a method for adjusting optical performance of an optical element by ion implantation, which comprises the following steps: simulating the distribution of incident ions in the substrate by calculating the relationship between the depth of the simulated ions implanted into the substrate surface and the ion energy and incident angle, and simulating the influence of ion species and dosage on the spectral regulation range and amplitude; determining ion implantation type, energy, implantation angle and implantation dosage according to the required spectral band and amplitude and the simulation calculation result; the substrate is placed in an ion implanter and ions of a defined energy and dose are implanted. The method injects ions into the surface of the substrate to adjust the absorption, transmission or reflection of the optical element without influencing the surface roughness, hardness and wear resistance of the element, ensures the environmental adaptability of the optical element, is applied to luminescent crystals, detection windows or energy-saving windows and the like, and has wide application prospect.
Description
Technical Field
The invention belongs to the field of optical elements, and particularly relates to a method for changing absorption, transmission and reflection of an optical element by an ion implantation technology.
Background
In optical elements, it is often necessary to adjust the absorption, transmission or reflection of the light in the wavelength band used, and also to filter out some stray light. In order to achieve the purpose, a method commonly adopted at present is to coat a thin film on the surface of a substrate material, reflect or absorb light of a certain wave band, transmit light of another wave band, realize the function in a wide wave band range, and have the requirements of multiple coating material types, multiple film layers and thick film layers, wherein the film layers are easily affected by the change of the surrounding environment to generate the film stripping phenomenon. The optical element is an indispensable component in the detector system, and is often installed at the outermost side of the whole detector system as a window, and the temperature, humidity, raindrops, sand grains and the like in the environment can generate large impact on the surface of the window, so that the surface of the optical element is required to have certain hardness and temperature and humidity resistance, and the surface coating layer is often damaged due to low hardness and easy moisture absorption.
Disclosure of Invention
In order to overcome the defects of the coating technology, the invention provides a method for adjusting the optical performance of an optical element by ion implantation, wherein ions are implanted to contain C, Ti, Ni, Zn, Fe, Ag, Cu or Cr and the like, and are implanted into a substrate with proper energy to adjust the spectral absorptivity, transmittance or reflectivity of different spectral bands, and the method has no adverse effect on the surface roughness, hardness, wear resistance and the like of the substrate, so that the element has good environmental adaptability.
The technical scheme of the invention is as follows:
a method of ion implantation to adjust optical properties of an optical element, comprising the steps of:
(1) simulating the distribution of incident ions in the substrate by calculating the relationship between the depth of the simulated ions implanted into the substrate surface and the ion energy and incident angle, and simulating the influence of ion species and dosage on the spectral regulation range and amplitude;
(2) determining ion implantation type, energy, implantation angle and implantation dosage according to the required spectral band and amplitude and the simulation calculation result;
(3) the substrate is placed in an ion implanter and ions of a defined energy and dose are implanted.
The substrate is made of aluminum oxide, silicon oxide, magnesium aluminate spinel, aluminum oxynitride (AlON) and the like.
The ions injected into the surface of the substrate are any one or combination of C, Ti, Ni, Zn, Fe, Ag, Cu and Cr.
The depth of the ions implanted on the surface of the substrate is in the range of tens of nanometers to hundreds of nanometers and can be adjusted by the energy of the implanted ions and the implantation angle.
The ion implantation energy is in the range of 40KeV-200KeV, preferably 50KeV-100KeV, more preferably 50KeV, and has no significant adverse effect on the surface roughness, hardness and wear resistance of the element.
The ion implantation angle is an angle between the ion implantation direction and the normal line of the substrate, and is in the range of 0 to 80 degrees, preferably 0 to 45 degrees, and more preferably 30 degrees.
The method loads an ion implantation layer on the surface of the optical element, the ion implantation layer adjusts the absorption, transmittance or reflectivity of a certain wave band of the optical element, and the variation range and range of the optical performance are adjusted by the implanted ion type and the implanted dose.
The ion implantation dosage is 1015ions/cm2To 1017ions/cm2In the order of magnitude range, preferably 1015ions/cm2Of the order of 2X 1015-5×1015ions/cm2。
The substrate is scrubbed or ultrasonically cleaned and baked or blown dry with high purity nitrogen before ion implantation.
Compared with the prior art, the invention has the technical effects that:
ions are injected into the substrate, the absorption, transmittance or reflectivity of the optical element in a certain wave band is adjusted, the adverse effects on the surface roughness, hardness and wear resistance of the element are avoided, the environmental adaptability of the optical element can be ensured, and the optical element can be applied to luminescent crystals, detection windows, energy-saving windows and the like and has a wide application prospect.
Drawings
FIG. 1 is a schematic view of an optical element comprising a surface ion-implanted layer structure according to the present invention (1-surface ion-implanted layer, 2-substrate).
FIG. 2 shows the C ion implantation result calculated by the software of example 1 and then processed by SiO2Depth and content profile of the substrate surface (C ion implantation as a calculation parameter)Incident energy of 50KeV, incident angle of 30 degrees, and implantation dose of 2X 1016ions/cm2，SiO2The density was 2.2g/cm3)。
FIG. 3 shows SiO before and after ion implantation in example 1C2Substrate transmission plot (solid line before ion implantation, dashed line after ion implantation).
FIG. 4 shows Al after implantation of C ions calculated by software of example 22O3Depth and content distribution of the substrate surface (calculated as C ion implantation energy of 50KeV, incident angle of 30 degree, implantation dose of 5 × 10)16ions/cm2,Al2O3The density was 3.9g/cm3)。
FIG. 5 shows Al before and after ion implantation in example 2C2O3Substrate transmission plot (solid line before ion implantation, dashed line after ion implantation).
Detailed Description
The following provides a detailed description of a method for adjusting optical properties of an optical element by ion implantation according to the present invention with reference to the following embodiments and drawings, but the scope of the invention should not be limited thereby. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted, however, that the drawings are designed in a simplified form for the purpose of illustrating embodiments of the invention only for the purpose of facilitating and distinctly claiming the same.
Referring to fig. 1, fig. 1 is a schematic view of an optical device with a surface containing an ion-implanted layer structure according to the present invention.
Example one
In this example, there is provided a SiO with a C-containing ion implanted layer2In the window, the transmittance of the visible light wave band of 400-800nm is reduced after C ion implantation, and the transmittance of the infrared wave band after 1500nm is basically unchanged.
In this example, the substrate material is SiO2The implanted ions are selected from C ions.
In this example, according to the software simulation results, in order to control the depth of the C ion implantation surface within 300nm, the C ions were determined at an energy of 50KeV, an incident angle of 30 degrees, and an angle of 2X 1016ions/cm2The dose implantation of (2).
Specifically, C ion implantation conditions SiO2The method for optical performance of the optical element specifically comprises the following steps:
step S11: first, double-side polished SiO2Soaking the substrate in alcohol, ultrasonically cleaning for 10-20min, washing with deionized water, and blow-drying with a high-pressure nitrogen gun;
step S12: simulation of C ion implantation into SiO by using SRIM software2The distribution of the substrate surface determines the implant energy, dose, angle, as shown in figure 2.
Step S13: according to the determined energy, dosage and angle of the C ions, SiO2The substrate is placed in an ion implanter for ion implantation.
Step S14: FIG. 3 shows SiO before and after C ion implantation2As can be seen from the change of the substrate transmission curve, the transmittance of 400-800nm is obviously reduced after ion implantation, and the transmittance of 1500-2200 nm is basically unchanged.
Example two
In this example, there is provided Al containing C ion-implanted layer2O3And in the window, the transmittance of the 0.4-4.2um wave band is greatly reduced after C ion implantation.
In this example, Al is selected as the base material2O3The implanted ions are selected from C ions.
In this example, according to the software simulation results, in order to control the depth of the C ion implantation surface within 300nm, it was determined that the C ions were implanted at an energy of 50KeV, an incident angle of 30 degrees, and an incident angle of 5X 1016ions/cm2The dose implantation of (2).
Specifically, the method for adjusting the optical performance of the optical element by C ion implantation specifically comprises the following steps:
step S21: first, Al polished on both sides2O3Soaking the substrate in alcohol, ultrasonically cleaning for 10-20min, washing with deionized water, and drying for later use;
step S22: simulating C ion implantation Al by adopting SRIM software or related software2O3Distribution of substrate surface, determining implantation energyDosage, angle, as shown in fig. 4.
Step S23: and according to the determined energy, dosage and angle of the C ions, carrying out ion implantation on the substrate.
Step S24: FIG. 5 shows Al before and after C ion implantation2O3The change of the substrate transmission curve shows that the average transmittance of the 0.4-4.2um wave band is reduced from 87.5% to 66.5% before and after ion implantation.
Experiments show that the method for adjusting the optical performance of the optical element by ion implantation can effectively adjust the transmittance of the optical element, can avoid the problem of multi-film environmental adaptability caused by a film coating method, well meets the requirement of the optical element on the selection of the transmittance of different wave bands, and can be used for luminescent crystals, detection windows, energy-saving windows and the like.
The above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and those skilled in the art can make modifications or equivalent substitutions on the technical solutions of the present invention without departing from the spirit and scope of the present invention, and the scope of the present invention should be determined by the claims.
Claims (8)
1. A method of ion implantation to adjust optical properties of an optical element, comprising the steps of:
(1) simulating the distribution of incident ions in the substrate by calculating the relationship between the depth of the simulated ions implanted into the substrate surface and the ion energy and incident angle, and simulating the influence of ion species and dosage on the spectral regulation range and amplitude;
(2) determining the ion implantation type, energy, implantation angle and implantation dosage according to the wave band and amplitude of the spectrum to be adjusted and the simulation calculation result;
(3) the substrate is placed in an ion implanter and ions of a defined energy and dose are implanted.
2. The method of claim 1, wherein the substrate comprises alumina, silica, magnesium aluminate spinel, aluminum oxynitride (AlON), or the like.
3. The method of claim 1, wherein the ions implanted into the substrate surface are any one or a combination of C, Ti, Ni, Zn, Fe, Ag, Cu, and Cr.
4. The method of claim 1, wherein the depth of the ions implanted into the surface of the substrate is in a range of several tens of nanometers to several hundreds of nanometers.
5. The method of claim 1, wherein the ion implantation energy is in the range of 40KeV to 200 KeV.
6. The method of claim 1, wherein the ion implantation angle is an angle between the ion implantation direction and a normal of the substrate, and is in a range of 0 degrees to 80 degrees.
7. The method of claim 1, wherein the ion implant dose is 1015ions/cm2To 1017ions/cm2Within a magnitude range.
8. The method of claim 1, wherein the substrate is scrubbed or ultrasonically cleaned and baked or blown dry with high purity nitrogen prior to ion implantation.
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| CN202010005326.9A CN111180302A (en) | 2020-01-03 | 2020-01-03 | Method for adjusting optical performance of optical element through ion implantation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113122765A (en) * | 2021-03-24 | 2021-07-16 | 武汉科技大学 | Quinary polymeric element nanoparticle with strong stable light amplitude limit and preparation method thereof |
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| CN1439750A (en) * | 2003-03-04 | 2003-09-03 | 山东大学 | Lithium niobate crystal waveguide preparation by ion implantation and anneal |
| CN101943768A (en) * | 2010-08-02 | 2011-01-12 | 山东大学 | Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching |
| CN106910682A (en) * | 2017-03-14 | 2017-06-30 | 云南大学 | It is a kind of to introduce the method that complementary ion improves optical property using to modified Si films |
| CN109256668A (en) * | 2018-10-10 | 2019-01-22 | 山东大学 | Broadband saturable absorbing mirror, preparation method based on rutile chip and the application in broadband tune Q, mode-locked laser |
| CN109904068A (en) * | 2019-02-19 | 2019-06-18 | 武汉大学 | Infrared absorption doped silicon and preparation method thereof |
| CN110431250A (en) * | 2017-02-14 | 2019-11-08 | 法国爱奥尼亚公司 | The sapphire method of the high-transmission rate antireflection of scratch-resistant is generated with Ion Beam Treatment |
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2020
- 2020-01-03 CN CN202010005326.9A patent/CN111180302A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438500A (en) * | 2003-03-04 | 2003-08-27 | 山东大学 | Method for preparing ridge-shape light-wave-guide of optical crystal by ion injection method |
| CN1439750A (en) * | 2003-03-04 | 2003-09-03 | 山东大学 | Lithium niobate crystal waveguide preparation by ion implantation and anneal |
| CN101943768A (en) * | 2010-08-02 | 2011-01-12 | 山东大学 | Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching |
| CN110431250A (en) * | 2017-02-14 | 2019-11-08 | 法国爱奥尼亚公司 | The sapphire method of the high-transmission rate antireflection of scratch-resistant is generated with Ion Beam Treatment |
| CN106910682A (en) * | 2017-03-14 | 2017-06-30 | 云南大学 | It is a kind of to introduce the method that complementary ion improves optical property using to modified Si films |
| CN109256668A (en) * | 2018-10-10 | 2019-01-22 | 山东大学 | Broadband saturable absorbing mirror, preparation method based on rutile chip and the application in broadband tune Q, mode-locked laser |
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| CN113122765A (en) * | 2021-03-24 | 2021-07-16 | 武汉科技大学 | Quinary polymeric element nanoparticle with strong stable light amplitude limit and preparation method thereof |
| CN113122765B (en) * | 2021-03-24 | 2022-04-15 | 武汉科技大学 | Quinary polymeric element nanoparticle with strong stable light amplitude limit and preparation method thereof |
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