CN102751408A - Light emitting diode by taking graphene film as current carrier injection layer - Google Patents
Light emitting diode by taking graphene film as current carrier injection layer Download PDFInfo
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- CN102751408A CN102751408A CN2012102172427A CN201210217242A CN102751408A CN 102751408 A CN102751408 A CN 102751408A CN 2012102172427 A CN2012102172427 A CN 2012102172427A CN 201210217242 A CN201210217242 A CN 201210217242A CN 102751408 A CN102751408 A CN 102751408A
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- injection layer
- carrier injection
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Abstract
The invention discloses a light emitting diode by taking a graphene film as a current carrier injection layer, which comprises a substrate, a current carrier injection layer, a luminescent layer, a graphene film, a lower metal electrode and an upper metal electrode, wherein the current carrier injection layer is manufactured on the substrate; the luminescent layer is manufactured on one side of the upper surface of the current carrier injection layer, and the width of the luminescent layer is smaller than the width of the current carrier injection layer to enable the current carrier injection layer to form a table top; the graphene film is manufactured on the luminescent layer; the lower metal electrode is manufactured on the table top of the current carrier injection layer; and the upper metal electrode is manufactured on the graphene film. According to the light emitting diode disclosed by the invention, a method that the graphene film is used as the current carrier injection layer is adopted, the hole injection is improved, the thickness of an electronic injection layer is reduced, and the cost is lowered.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant the gallium nitride based light emitting diode of using mineral carbon alkene film especially as carrier injection layer.
Background technology
Graphene (Graphene) be a kind of by carbon atom with sp
2Hybridized orbit is formed the flat film that hexangle type is the honeycomb lattice, has high permeability (97.7%); High thermal conductivity coefficient (5300W/mK), high electron mobility (15000 cm
2/ Vs), low-resistivity only makes an appointment with (10
-6Ω cm).Because the resistivity that it is extremely low, high electron mobility thinner, conduction speed electronic component of new generation faster or transistor so can be used to develop by expectation.Be applied to make transparency conducting layer, Touch Screen, tabula rasa and solar cell at present.On the other hand, because P type doping difficulty and hole effective mass are bigger, it is the subject matter that light-emitting diode exists that the electron hole that causes is injected asymmetric.Simultaneously,, have to use thicker N type carrier injection layer, increased production cost and cycle in order to improve the CURRENT DISTRIBUTION inhomogeneities and to obtain better epitaxial loayer crystal mass.
Summary of the invention
The objective of the invention is to, the light-emitting diode of a kind of using mineral carbon alkene film as carrier injection layer is provided, this method is through using the method for graphene film as carrier injection layer, improve the hole and inject, reduce electron injecting layer thickness, reducing cost.
The present invention provides the light-emitting diode of a kind of using mineral carbon alkene film as carrier injection layer, comprising:
One substrate;
One carrier injection layer, it is produced on the substrate;
One luminescent layer, it is produced on the side above the carrier injection layer, and width makes carrier injection layer form a table top less than the width of carrier injection layer;
One graphene film, it is produced on the luminescent layer;
Metal electrode once, it is made on the table top of carrier injection layer;
Metal electrode on one, it is made on the graphene film.
Wherein the material of this substrate is gallium nitride, sapphire, carborundum or silicon.
Wherein the material of this carrier injection layer is: InGaN, aluminium gallium nitride alloy or zinc oxide.
Wherein the conduction type of this carrier injection layer is: N type or P type.
Wherein said making carrier injection layer is to adopt metal organic-matter chemical vapour deposition or molecular beam epitaxy preparation.
Wherein this luminescent layer is the multicycle structure, and periodicity is 1-20.
Wherein said preparation graphene film is to adopt tear tape method, chemical vapor deposition method or thermal oxidation method.
The conduction type of wherein said graphene film is: N type or P type.
The material of wherein said graphene film is: the single or multiple lift graphene film.
Metal electrode and last metal electrode are to adopt photoetching, etching, deposition, corrosion or vapor deposition under the wherein said making.
Description of drawings
For making the auditor can further understand structure of the present invention, characteristic and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1 is the first embodiment of the present invention, chip epitaxial structure sketch map.
Fig. 2 is the first embodiment of the present invention, the sketch map of chip structure after making graphene film.
Fig. 3 is the first embodiment of the present invention, and chip structure is in photoetching, the sketch map after the etching.
Fig. 4 is the first embodiment of the present invention, the sketch map of chip structure after making metal electrode.
Embodiment
Key of the present invention is.Through using graphene film as carrier injection layer, improve the charge carrier injection efficiency, improve current expansion.
See also Fig. 1-shown in Figure 4, the present invention provides the light-emitting diode of a kind of using mineral carbon alkene film as carrier injection layer, comprising:
One substrate 20, the material of this substrate 20 are gallium nitride, sapphire, carborundum or silicon; The effect of substrate 20 is substrate and supports that crystal growth is provided for the epitaxial material on it, according to technology maturity, and mechanical strength, device stability, light transmittance, the lattice match degree is selected different backing materials with aspects such as thermal stress mismatch degree.The material of this substrate 20 is gallium nitride, sapphire, carborundum or silicon; The effect of substrate 20 is substrate and supports that crystal growth is provided for the epitaxial material on it, according to technology maturity, and mechanical strength, device stability, light transmittance, the lattice match degree is selected different backing materials with aspects such as thermal stress mismatch degree.At first, backing material and epitaxial film lattice match are most important.Lattice match comprises two contents: the one, and with the lattice match in the epitaxial growth plane, promptly substrate and epitaxial loayer are complementary on a certain direction on plane, growth interface place; Another is along the coupling on the substrate surface normal direction, if mismatch is spent greatly on this direction, then any injustice of substrate surface or small fluctuating all possibly introduced defective, and extend in the epitaxial film.Secondly, epitaxial loayer and substrate 20 materials should be close at thermal coefficient of expansion, have big difference epitaxial film quality in growth course is descended, also may be in the device course of work, owing to heating causes components from being damaged.In addition, backing material needs goodish chemical stability, can not with epitaxial film generation chemical reaction, the quality of epitaxial loayer is descended.
One carrier injection layer 30; It is produced on the substrate 20; The material of this carrier injection layer 30 is: InGaN, aluminium gallium nitride alloy or zinc oxide; The conduction type of this carrier injection layer 30 is: N type or P type, and described making carrier injection layer 30 is to adopt metal organic-matter chemical vapour deposition or molecular beam epitaxy preparation; The doping type of carrier injection layer 30 is N type or P type, as the implanted layer in electronics or hole.It act as as electrode and carries to what luminescent layer 31 injected, in luminescent layer 31, injects electronics or hole.Between the lattice of substrate 20 and luminescent layer 31, exist under the situation of mismatch, carrier injection layer 30 can also realize lattice from the transition of substrate 20 to luminescent layer 31, the defective that the minimizing lattice mismatch brings and the influence of dislocation, the crystal mass of raising luminescent layer 31.
One luminescent layer 31, it is produced on the side above the carrier injection layer 30, and width makes carrier injection layer 30 form a table top 31 ' less than the width of carrier injection layer 30, and this luminescent layer 31 is the multicycle structure, and periodicity is 1-20; Luminescent layer 31 act as realization from the charge carrier that upper/ lower electrode 50 and 51 injects, via transporting of 30 graphene films 40 of carrier injection layer,, convert electric energy into luminous energy, to produce photon in luminescent layer 31 radiation recombination wherein; Usually the energy gap of luminescent layer 30 is less than carrier injection layer 30, better to hold charge carrier.
One graphene film 40; It is produced on the luminescent layer 31; Described preparation graphene film 40 is to adopt tear tape method, chemical vapor deposition method or thermal oxidation method; The conduction type of said graphene film 40 is: N type or P type, and the material of said graphene film 40 is: the single or multiple lift graphene film; Because graphene film 40 has high electron mobility, high permeability, high thermoconductivity, the characteristic of low-resistivity can realize that not only high efficiency charge carrier injects, and also has the effect of transparency conducting layer, improves current expansion, improves extraction efficiency.
Once metal electrode 50, and it is made on the table top 31 ' of carrier injection layer 30, and metal electrode 50 is contacted with carrier injection layer 30 parts.Metal electrode 50 is to adopt photoetching, etching, deposition, corrosion or vapor deposition under the said making; Metal electrode 50 mainly plays the metal solder joint and connects the outer enclosure device, and realizes that electric current is from the effect of external circuit to the injection of carrier injection layer 30.
Embodiment
See also Fig. 1 to shown in Figure 4, a kind of using mineral carbon alkene of the present invention film comprises the steps: as the light-emitting diode of carrier injection layer
1, be altogether unjustifiable 30,8 pairs of SQW GaN/InGaN luminescent layers 31 of n type GaN electron injecting layer (gross thickness is 0.15 μ m) of Doped GaN, heavy doping Si that 2 μ m are thick of GaN resilient coating, the 2 μ m that epitaxial growth 0.1 μ m is thick successively on Sapphire Substrate 20.；
2, stick the graphene film for preparing 40 in the epitaxial structure surface, and placed red fuming nitric acid (RFNA) steam 1 minute, vacuum annealing afterwards 3 minutes;
3, through photoetching, process choice property etching epitaxial structures such as inductively coupled plasma etching come out N type GaN electron injecting layer, form table top 31 ';
4, through technologies such as photoetching, electron beam evaporation with aluminium (Al)/titanium (Ti)/gold (Au) (400/50/400nm) N type metal electrode 50 be prepared on the table top 31 ', its part is contacted with N type GaN electron injecting layer 31;
Prepared titanium (Ti)/aluminium (Al)/titanium (Ti)/gold (Au) such as 5, process photoetching, electron beam evaporation are P type metal electrode 51 (50/400/50/400nm), makes P type metal electrode 51 parts contact with graphene film 40.
The above; Be merely the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with this technological people in the technical scope that the present invention disclosed; The conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (10)
1. a using mineral carbon alkene film comprises as the light-emitting diode of carrier injection layer:
One substrate;
One carrier injection layer, it is produced on the substrate;
One luminescent layer, it is produced on the side above the carrier injection layer, and width makes carrier injection layer form a table top less than the width of carrier injection layer;
One graphene film, it is produced on the luminescent layer;
Metal electrode once, it is made on the table top of carrier injection layer;
Metal electrode on one, it is made on the graphene film.
2. using mineral carbon alkene film according to claim 1 is as the light-emitting diode of carrier injection layer, and wherein the material of this substrate is gallium nitride, sapphire, carborundum or silicon.
3. using mineral carbon alkene film according to claim 1 is as the light-emitting diode of carrier injection layer, and wherein the material of this carrier injection layer is: InGaN, aluminium gallium nitride alloy or zinc oxide.
4. using mineral carbon alkene film according to claim 3 is as the light-emitting diode of carrier injection layer, and wherein the conduction type of this carrier injection layer is: N type or P type.
5. using mineral carbon alkene film according to claim 4 is as the light-emitting diode of carrier injection layer, and wherein said making carrier injection layer is to adopt metal organic-matter chemical vapour deposition or molecular beam epitaxy preparation.
6. using mineral carbon alkene film according to claim 1 is as the light-emitting diode of carrier injection layer, and wherein this luminescent layer is the multicycle structure, and periodicity is 1-20.
7. using mineral carbon alkene film according to claim 1 is as the light-emitting diode of carrier injection layer, and wherein said preparation graphene film is to adopt tear tape method, chemical vapor deposition method or thermal oxidation method.
8. using mineral carbon alkene film according to claim 7 is as the light-emitting diode of carrier injection layer, and the conduction type of wherein said graphene film is: N type or P type.
9. using mineral carbon alkene film according to claim 8 is as the light-emitting diode of carrier injection layer, and the material of wherein said graphene film is: the single or multiple lift graphene film.
10. using mineral carbon alkene film according to claim 1 is as the light-emitting diode of carrier injection layer, and metal electrode and last metal electrode are to adopt photoetching, etching, deposition, corrosion or vapor deposition under the wherein said making.
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| CN2012102172427A CN102751408A (en) | 2012-06-27 | 2012-06-27 | Light emitting diode by taking graphene film as current carrier injection layer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300052A (en) * | 2014-10-11 | 2015-01-21 | 北京工业大学 | LED chip structure of graphene structure and manufacturing method thereof |
| CN106684221A (en) * | 2016-11-23 | 2017-05-17 | 浙江大学 | Graphene/gallium nitride/metal nanoparticle two-way light-emitting diode and manufacturing method thereof |
| CN106816522A (en) * | 2017-02-22 | 2017-06-09 | 武汉华星光电技术有限公司 | Light emitting diode |
| CN111613697A (en) * | 2020-05-22 | 2020-09-01 | 青岛粲耀新材料科技有限责任公司 | Graphene-intercalated superlattice thin film and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102082214A (en) * | 2010-11-29 | 2011-06-01 | 华南师范大学 | Method for preparing GaN-based light emitting diode (LED) semiconductor chip |
| CN102403430A (en) * | 2010-09-16 | 2012-04-04 | 三星Led株式会社 | Graphene light-emitting device and method of manufacturing same |
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2012
- 2012-06-27 CN CN2012102172427A patent/CN102751408A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403430A (en) * | 2010-09-16 | 2012-04-04 | 三星Led株式会社 | Graphene light-emitting device and method of manufacturing same |
| CN102082214A (en) * | 2010-11-29 | 2011-06-01 | 华南师范大学 | Method for preparing GaN-based light emitting diode (LED) semiconductor chip |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300052A (en) * | 2014-10-11 | 2015-01-21 | 北京工业大学 | LED chip structure of graphene structure and manufacturing method thereof |
| CN106684221A (en) * | 2016-11-23 | 2017-05-17 | 浙江大学 | Graphene/gallium nitride/metal nanoparticle two-way light-emitting diode and manufacturing method thereof |
| CN106816522A (en) * | 2017-02-22 | 2017-06-09 | 武汉华星光电技术有限公司 | Light emitting diode |
| WO2018152939A1 (en) * | 2017-02-22 | 2018-08-30 | 武汉华星光电技术有限公司 | Light emitting diode |
| US10381518B2 (en) | 2017-02-22 | 2019-08-13 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Light-emitting diode |
| CN111613697A (en) * | 2020-05-22 | 2020-09-01 | 青岛粲耀新材料科技有限责任公司 | Graphene-intercalated superlattice thin film and preparation method thereof |
| CN111613697B (en) * | 2020-05-22 | 2020-11-27 | 山西穿越光电科技有限责任公司 | GaN/AlGaN superlattice thin film containing graphene intercalation and preparation method thereof |
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Application publication date: 20121024 |