CN106898577A - Display base plate and preparation method thereof, display device - Google Patents
Display base plate and preparation method thereof, display device Download PDFInfo
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- CN106898577A CN106898577A CN201710177835.8A CN201710177835A CN106898577A CN 106898577 A CN106898577 A CN 106898577A CN 201710177835 A CN201710177835 A CN 201710177835A CN 106898577 A CN106898577 A CN 106898577A
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- transparent conductive
- conductive pattern
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Abstract
The invention provides a kind of display base plate and preparation method thereof, display device, belong to display technology field.Wherein, the step of preparation method of display base plate is included in the step of forming public electrode wire on underlay substrate, the formation public electrode wire includes：Form bearing of trend identical transparent conductive pattern and metallic pattern, the transparent conductive pattern is in contact with the metallic pattern and constitutes at least partly public electrode wire, and orthographic projection of the transparent conductive pattern on the underlay substrate has beyond the part of orthographic projection of the metallic pattern on the underlay substrate.Technical scheme can improve the storage capacitance of display device in the case where the aperture opening ratio of display device is not influenceed, and improve the display effect of display device.
Description
Technical field
The present invention relates to display technology field, a kind of display base plate and preparation method thereof, display device are particularly related to.
Background technology
In TFT-LCD (thin film transistor-liquid crystal display) industry, twisted-nematic (Twisted Nematic, TN) type liquid
Crystal display has the advantages that process is simple, maturation, yield are higher because of it, is widely used in notebook computer, palm terminal etc.
In electronical display end product.
In the liquid crystal display of TN patterns, public electrode wire is made up of lighttight metal, in order to ensure TN moulds
The aperture opening ratio of formula liquid crystal display, it is necessary to by public electrode wire set it is narrow, and the storage of TN mode LCDs is electric
Appearance is determined by the facing area between public electrode wire and pixel electrode, therefore storage capacitance is limited to aperture opening ratio and can compare
It is low, cause the liquid crystal display of TN patterns in capacitance coupling effect and off-state current IoffUnder the influence of be likely to occur Flicker
(flicker) and ghost etc. are bad.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of display base plate and preparation method thereof, display device, Neng Gou
The storage capacitance of display device is improved in the case of not influenceing the aperture opening ratio of display device, improves the display effect of display device.
In order to solve the above technical problems, embodiments of the invention offer technical scheme is as follows：
On the one hand, there is provided a kind of preparation method of display base plate, it is included on underlay substrate and forms the step of public electrode wire
Suddenly, the step of forming the public electrode wire includes：
Form bearing of trend identical transparent conductive pattern and metallic pattern, the transparent conductive pattern and the metal figure
Shape is in contact and constitutes at least partly public electrode wire, orthographic projection tool of the transparent conductive pattern on the underlay substrate
There is the part of the orthographic projection beyond the metallic pattern on the underlay substrate.
Further, forming the transparent conductive pattern and the metallic pattern includes：
The transparent conductive pattern and the metallic pattern, the electrically conducting transparent figure are sequentially formed on the underlay substrate
Orthographic projection of orthographic projection of the shape on the underlay substrate with the metallic pattern on the underlay substrate partially overlaps；Or
The metallic pattern and the transparent conductive pattern, the electrically conducting transparent figure are sequentially formed on the underlay substrate
Orthographic projection of orthographic projection of the shape on the underlay substrate with the metallic pattern on the underlay substrate partially overlaps.
Further, forming the transparent conductive pattern and the metallic pattern includes：
The transparent conductive pattern and the metallic pattern are formed simultaneously by a patterning processes, the metallic pattern exists
Orthographic projection on the underlay substrate falls completely within the transparent conductive pattern in the orthographic projection on the underlay substrate.
Further, it is described to pass through a patterning processes while forming the transparent conductive pattern and the metallic pattern bag
Include：
Sequentially form transparency conducting layer and metal level；
Photoresist is coated on the metal level, the photoresist is entered using intermediate tone mask plate or gray tone mask plate
Row exposure, forms photoresist and region, photoresist part reservation region and the non-reservation region of photoresist is fully retained after development；
The transparency conducting layer and metal level of the non-reservation region of photoresist are etched away, the transparent conductive pattern is formed；
The photoresist of removal photoresist part reservation region；
The metal level of photoresist part reservation region is etched away, the metallic pattern is formed；
Removal photoresist is fully retained the photoresist in region.
Further, the display base plate also grid and grid line including thin film transistor (TFT), is forming the electrically conducting transparent
In a same patterning processes of figure and the metallic pattern, the grid and grid line of the thin film transistor (TFT) are also formed.
The embodiment of the present invention additionally provides a kind of display base plate, including the public electrode wire on underlay substrate, at least
The part public electrode wire is made up of bearing of trend identical transparent conductive pattern and metallic pattern, the transparent conductive pattern
It is in contact with the metallic pattern, and orthographic projection of the transparent conductive pattern on the underlay substrate has beyond the gold
The part of orthographic projection of the category figure on the underlay substrate.
Further, the public electrode wire includes the transparent conductive pattern and the metallic pattern that are stacked,
Positive throwing of orthographic projection of the transparent conductive pattern on the underlay substrate with the metallic pattern on the underlay substrate
Shadow partially overlaps, and the metallic pattern covers the subregion of the transparent conductive pattern；Or the transparent conductive pattern covering
The subregion of the metallic pattern.
Further, the public electrode wire includes that the metallic pattern and covering the described transparent of metallic pattern are led
Electrograph shape, orthographic projection of the metallic pattern on the underlay substrate falls completely within the transparent conductive pattern in the substrate
In orthographic projection on substrate；Or
The public electrode wire includes the transparent conductive pattern and the metal on the transparent conductive pattern
Figure, orthographic projection of the metallic pattern on the underlay substrate falls completely within the transparent conductive pattern in the substrate base
In orthographic projection on plate.
Further, the public electrode wire includes the metallic pattern and the transparent conductive pattern that are arranged side by side.
The embodiment of the present invention additionally provides a kind of display device, including display base plate as described above.
Embodiments of the invention have the advantages that：
In such scheme, at least part of public electrode wire is by bearing of trend identical transparent conductive pattern and metallic pattern group
Into orthographic projection of the transparent conductive pattern on underlay substrate has beyond the portion of orthographic projection of the metallic pattern on underlay substrate
Point, so enable to public electrode wire to be more than the right opposite of metallic pattern and pixel electrode with the facing area of pixel electrode
Product so that the storage capacitance of display device is improved；Simultaneously because public electrode wire increases with the facing area of pixel electrode
Plus part be by transparent conductive pattern caused by, and transparent conductive pattern does not influence display device because of its translucency having
Aperture opening ratio, therefore, it is possible to improve the storage capacitance of display device in the case where the aperture opening ratio of display device is not influenceed, improves aobvious
The display effect of showing device.
Brief description of the drawings
Fig. 1 is the floor map of existing display base plate；
Fig. 2 is the schematic cross-section in the AA ' directions of existing display base plate；
Fig. 3 is the floor map of embodiment of the present invention display base plate；
Fig. 4 is the schematic cross-section in the AA ' directions of embodiment of the present invention display base plate.
Reference
The passivation layer of 1 underlay substrate, 2 metallic pattern, 3 gate insulation layer 4
The transparent conductive pattern of 5 pixel electrode 6
Specific embodiment
For the technical problem, technical scheme and the advantage that to be solved embodiments of the invention are clearer, below in conjunction with
Drawings and the specific embodiments are described in detail.
As depicted in figs. 1 and 2, in the liquid crystal display of existing TN patterns, public electrode wire is lighttight metallic pattern
The storage capacitance of 2, TN mode LCDs is determined by the facing area between public electrode wire and pixel electrode, in order to
Improve TN patterns liquid crystal display storage capacitance, it is necessary to by metallic pattern 2 design it is relatively wide, but so again can reduce liquid
The aperture opening ratio of crystal display, influence liquid crystal display display effect, therefore the storage capacitance of the liquid crystal display of TN patterns and
Aperture opening ratio can not be taken into account.
In order to solve the above problems, embodiments of the invention provide a kind of display base plate and preparation method thereof, display device,
The storage capacitance of display device can be improved in the case where the aperture opening ratio of display device is not influenceed, improves the display of display device
Effect.
Embodiment one
The present embodiment provides a kind of preparation method of display base plate, is included on underlay substrate and forms the step of public electrode wire
Suddenly, the step of forming the public electrode wire includes：
Form bearing of trend identical transparent conductive pattern and metallic pattern, the transparent conductive pattern and the metal figure
Shape is in contact and constitutes at least partly public electrode wire, orthographic projection tool of the transparent conductive pattern on the underlay substrate
There is the part of the orthographic projection beyond the metallic pattern on the underlay substrate.
In the present embodiment, at least part of public electrode wire is by bearing of trend identical transparent conductive pattern and metallic pattern group
Into orthographic projection of the transparent conductive pattern on underlay substrate has beyond the portion of orthographic projection of the metallic pattern on underlay substrate
Point, so enable to public electrode wire to be more than the right opposite of metallic pattern and pixel electrode with the facing area of pixel electrode
Product so that the storage capacitance of display device is improved；Simultaneously because public electrode wire increases with the facing area of pixel electrode
Plus part be by transparent conductive pattern caused by, and transparent conductive pattern does not influence display device because of its translucency having
Aperture opening ratio, therefore, it is possible to improve the storage capacitance of display device in the case where the aperture opening ratio of display device is not influenceed, improves aobvious
The display effect of showing device.
Wherein it is possible to be that the part of public electrode wire is made up of, or public transparent conductive pattern and metallic pattern
Common-battery polar curve is all constituted by transparent conductive pattern and metallic pattern.
In specific embodiment, forming the transparent conductive pattern and the metallic pattern includes：
The transparent conductive pattern and the metallic pattern, the electrically conducting transparent figure are sequentially formed on the underlay substrate
Orthographic projection of orthographic projection of the shape on the underlay substrate with the metallic pattern on the underlay substrate partially overlaps；Or
The metallic pattern and the transparent conductive pattern, the electrically conducting transparent figure are sequentially formed on the underlay substrate
Orthographic projection of orthographic projection of the shape on the underlay substrate with the metallic pattern on the underlay substrate partially overlaps.
Transparent conductive pattern and metallic pattern can be respectively formed by patterning processes twice, transparent leading can be initially formed
Electrograph shape re-forms metallic pattern, it is also possible to is initially formed metallic pattern and re-forms transparent conductive pattern, but transparent conductive pattern
It is, not by the part of metallic pattern covering, to be so made up of transparent conductive pattern and metallic pattern that needs have beyond metallic pattern
The facing area of public electrode wire part and pixel electrode will be greater than the right opposite of corresponding region metallic pattern and pixel electrode
Product such that it is able to improve the storage capacitance of display base plate.
In preferred embodiment, forming the transparent conductive pattern and the metallic pattern includes：
The transparent conductive pattern and the metallic pattern are formed simultaneously by a patterning processes, the metallic pattern exists
Orthographic projection on the underlay substrate falls completely within the transparent conductive pattern in the orthographic projection on the underlay substrate.Adopt
Transparent conductive pattern and metallic pattern are formed with a patterning processes, can so not increase display base plate patterning processes
Transparent conductive pattern is formed on the premise of number, the number of times of display base plate patterning processes is reduced, the production cost of display base plate is reduced.
Further, it is described to pass through a patterning processes while forming the transparent conductive pattern and metallic pattern tool
Body includes：
Sequentially form transparency conducting layer and metal level；
Photoresist is coated on the metal level, the photoresist is entered using intermediate tone mask plate or gray tone mask plate
Row exposure, forms photoresist and region, photoresist part reservation region and the non-reservation region of photoresist is fully retained after development；
The transparency conducting layer and metal level of the non-reservation region of photoresist are etched away, the transparent conductive pattern is formed；
The photoresist of removal photoresist part reservation region；
The metal level of photoresist part reservation region is etched away, the metallic pattern is formed；
Removal photoresist is fully retained the photoresist in region.
Further, the display base plate also grid and grid line including thin film transistor (TFT), is forming the electrically conducting transparent
In a same patterning processes of figure and the metallic pattern, the grid and grid line of the thin film transistor (TFT) are also formed.
Transparent conductive pattern and metallic pattern are formed simultaneously with by a patterning processes below, and metallic pattern is utilization
As a example by barrier metal layer is made, the preparation method to the present embodiment display base plate describes in detail, the display base plate of the present embodiment
Preparation method specifically include following steps：
Step 1, one underlay substrate 1 of offer, form transparency conducting layer and barrier metal layer on underlay substrate 1；
Wherein, underlay substrate 1 can be glass substrate or quartz base plate.
Specifically, it is about by the method deposit thickness of sputtering or thermal evaporation on underlay substrate 1 's
Transparency conducting layer, transparency conducting layer can be ITO, IZO or other transparent metal oxides.
Can deposit thickness be about over transparent conductive layer using sputtering or the method for thermal evaporationGrid
Metal level, barrier metal layer can be Cu, the alloy of the metal such as Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and these metals,
Barrier metal layer can be single layer structure or sandwich construction, sandwich construction such as Cu Mo, Ti Cu Ti, Mo Al Mo etc..
Step 2, transparency conducting layer and barrier metal layer are patterned to form transparent conductive pattern 6, metallic pattern 2, grid line
With the grid of thin film transistor (TFT)；
One layer of photoresist is coated in barrier metal layer, the photoresist is entered with intermediate tone mask plate or gray tone mask plate
Row exposure, forms photoresist and region, photoresist part reservation region and the non-reservation region of photoresist is fully retained after development, its
In, photoresist is fully retained region corresponding to grid line, the grid of thin film transistor (TFT) and metallic pattern region, photoresist part
Reservation region corresponds to transparent conductive pattern region, and the non-reservation region of photoresist corresponds to the region beyond above-mentioned figure；
Development treatment is carried out, the photoresist of the non-reservation region of photoresist is completely removed, the photoresist that photoresist is fully retained region is thick
Degree keeps constant, and the photoresist thickness of photoresist part reservation region diminishes；Photoresist is etched away not by etching technics completely
The barrier metal layer and transparency conducting layer of reservation region, form transparent conductive pattern 5；The photoetching of removal photoresist part reservation region
Glue, the barrier metal layer to photoresist part reservation region is performed etching, and forms the grid and grid of metallic pattern 2, thin film transistor (TFT)
Line (not shown), peels off remaining photoresist.
The public electrode wire being made up of transparent conductive pattern and metallic pattern can be formed by this step, wherein, for
For public electrode wire, its metallic pattern is constituted on transparent conductive pattern, and the line width of transparent conductive pattern is more than
The line width of metallic pattern.In addition, still remaining with transparency conducting layer, the electrically conducting transparent of reservation under the grid and grid line of thin film transistor (TFT)
Layer will not be impacted to the performance of display base plate, and also can reduce the grid of thin film transistor (TFT) and the resistivity of grid line,
For the grid and grid line of thin film transistor (TFT), the orthographic projection and grid thereon of the transparency conducting layer of reservation in underlay substrate 1
Metal level overlaps in the orthographic projection of underlay substrate 1.
Step 3, the formation gate insulation layer 3 on the underlay substrate 1 for completing step 2；
Specifically, the substrate base of step 2 can be completed in using plasma enhancing chemical vapor deposition (PECVD) method
Deposit thickness is on plate 1Gate insulation layer 3, gate insulation layer 3 can select oxide, nitride or oxygen
Nitrogen compound, corresponding reacting gas is SiH4、NH3、N2Or SiH2Cl2、NH3、N2。
Step 4, formation active layer (not shown) on the underlay substrate 1 for completing step 3；
Specifically, layer of semiconductor material is deposited on the underlay substrate 1 for completing step 3, is coated on semi-conducting material
One layer of photoresist, is exposed using mask plate to photoresist, photoresist is formed the non-reservation region of photoresist and photoresist guarantor
Region is stayed, wherein, photoresist reservation region corresponds to the figure region of active layer, and the non-reservation region of photoresist corresponds to be had
Region beyond the figure of active layer；Development treatment is carried out, the photoresist of the non-reservation region of photoresist is completely removed, photoresist is protected
Stay the photoresist thickness in region to keep constant, etch away the semiconductor material of the non-reservation region of photoresist completely by etching technics
Material, forms the figure of active layer, peels off remaining photoresist.
Step 5, on the underlay substrate 1 by step 4 formed thin film transistor (TFT) source electrode, drain electrode and data wire (do not scheme
Show)；
Specifically, magnetron sputtering, thermal evaporation or other film build methods can be used on the underlay substrate 1 for completing step 4
Deposition a layer thickness is aboutSource and drain metal level, Source and drain metal level can be Cu, Al, Ag, Mo, Cr,
The alloy of the metals such as Nd, Ni, Mn, Ti, Ta, W and these metals.Source and drain metal level can be single layer structure or multilayer knot
Structure, sandwich construction such as Cu Mo, Ti Cu Ti, Mo Al Mo etc..One layer of photoresist is coated in Source and drain metal level, using covering
Lamina membranacea is exposed to photoresist, photoresist is formed the non-reservation region of photoresist and photoresist reservation region, wherein, photoresist
Reservation region corresponds to the figure region of source electrode, drain electrode and data wire, and the non-reservation region of photoresist corresponds to above-mentioned figure
Region in addition；Development treatment is carried out, the photoresist of the non-reservation region of photoresist is completely removed, the light of photoresist reservation region
Photoresist thickness keeps constant；Etch away the Source and drain metal level of the non-reservation region of photoresist completely by etching technics, formed drain electrode,
Source electrode and data wire, peel off remaining photoresist.
Step 6, the formation passivation layer 4 on the underlay substrate 1 by step 5；
Specifically, can complete step 5 underlay substrate 1 on using magnetron sputtering, thermal evaporation, PECVD or other into
Film method deposit thickness isPassivation layer 4, passivation layer 4 can select oxide, nitride or oxygen nitrogen
Compound, specifically, passivation material can be SiNx, SiOx or Si (ON) x, and passivation layer 4 can also use Al2O3.Passivation layer
4 can be single layer structure, or the double-layer structure constituted using silicon nitride and silica.Wherein, the oxide correspondence of silicon
Reacting gas can be SiH4, N2O；Nitride or oxynitrides correspondence gas can be SiH4, NH3, N2Or
SiH2Cl2, NH3, N2.The figure of the passivation layer of via is included by a patterning processes formation, specifically, can be in passivation
A layer thickness is coated on layer to be aboutOrganic resin, organic resin can be benzocyclobutene (BCB),
Can also be other organic photosensitive materials, after exposure imaging, the blunt of pixel electrode via is formed with by an etching technics
Change the figure of layer 4.
Step 7, the formation pixel electrode 5 on passivation layer 4, pixel electrode 5 is by the pixel electrode via through passivation layer 4
It is connected with the drain electrode of thin film transistor (TFT).
Specifically, it is about by the method deposit thickness of sputtering or thermal evaporation on the underlay substrate 1 for completing step 6Transparency conducting layer, transparency conducting layer can be ITO, IZO or other transparent metal oxide,
One layer of photoresist is coated on transparency conducting layer, photoresist is exposed using mask plate, photoresist is formed photoresist and do not protect
Region and photoresist reservation region are stayed, wherein, photoresist reservation region corresponds to the figure region of pixel electrode 5, photoetching
The non-reservation region of glue corresponds to the region beyond above-mentioned figure；Carry out development treatment, the photoresist quilt of the non-reservation region of photoresist
Remove completely, the photoresist thickness of photoresist reservation region keeps constant；Photoresist is etched away completely by etching technics not protect
The electrically conducting transparent layer film in region is stayed, remaining photoresist is peeled off, the figure of pixel electrode 5 is formed, pixel electrode 5 passes through pixel
Electrode via is connected with drain electrode.
By forming display base plate as shown in Figure 3 and Figure 4, compared with existing display base plate, this reality by above-mentioned steps
Apply example display base plate can on the premise of the storage capacitance of display base plate is not reduced by metallic pattern design it is narrow, from
And the aperture opening ratio using the display device of the display base plate can be improved；Or can be before the line width for not changing metallic pattern
Put, the storage capacitance of display base plate is increased by the line width for increasing transparent conductive pattern；Or can be set by metallic pattern
That counts is narrow, while improving the aperture opening ratio using the display device of the display base plate, by increasing transparent conductive pattern
Line width increases the storage capacitance of display base plate.
Embodiment two
A kind of display base plate is present embodiments provided, as shown in Figure 3 and Figure 4, including the common electrical on underlay substrate 1
Polar curve, at least part of public electrode wire is made up of bearing of trend identical transparent conductive pattern 6 and metallic pattern 2, described
Transparent conductive pattern 6 is in contact with the metallic pattern 2, and positive throwing of the transparent conductive pattern 6 on the underlay substrate
Shadow has beyond the part of orthographic projection of the metallic pattern 2 on the underlay substrate 1.
In the present embodiment, at least part of public electrode wire is by bearing of trend identical transparent conductive pattern and metallic pattern group
Into orthographic projection of the transparent conductive pattern on underlay substrate has beyond the portion of orthographic projection of the metallic pattern on underlay substrate
Point, so enable to public electrode wire to be more than the right opposite of metallic pattern and pixel electrode with the facing area of pixel electrode
Product so that the storage capacitance of display device is improved；Simultaneously because public electrode wire increases with the facing area of pixel electrode
Plus part be by transparent conductive pattern caused by, and transparent conductive pattern does not influence display device because of its translucency having
Aperture opening ratio, therefore, it is possible to improve the storage capacitance of display device in the case where the aperture opening ratio of display device is not influenceed, improves aobvious
The display effect of showing device.
Wherein it is possible to be that the part of public electrode wire is made up of, or public transparent conductive pattern and metallic pattern
Common-battery polar curve is all constituted by transparent conductive pattern and metallic pattern.
Further, the public electrode wire includes the transparent conductive pattern and the metallic pattern that are stacked,
Positive throwing of orthographic projection of the transparent conductive pattern on the underlay substrate with the metallic pattern on the underlay substrate
Shadow partially overlaps, and the metallic pattern covers the subregion of the transparent conductive pattern；Or the transparent conductive pattern covering
The subregion of the metallic pattern.Can be transparent conductive pattern be located at metallic pattern top, or metal figure
Morpheme is in the top of transparent conductive pattern, but it is not covered by metallic pattern that transparent conductive pattern needs have beyond metallic pattern
The part of lid, the public electrode wire part being so made up of transparent conductive pattern and metallic pattern and the facing area of pixel electrode
Will be greater than the facing area of correspondence metallic pattern and pixel electrode such that it is able to improve the storage capacitance of display base plate.
In one specific embodiment, the width of the width more than metallic pattern of transparent conductive pattern, the public electrode wire bag
The transparent conductive pattern of the metallic pattern and the covering metallic pattern is included, the metallic pattern is in the underlay substrate
On orthographic projection fall completely within the transparent conductive pattern in the orthographic projection on the underlay substrate；Or
The public electrode wire includes the transparent conductive pattern and the metal on the transparent conductive pattern
Figure, orthographic projection of the metallic pattern on the underlay substrate falls completely within the transparent conductive pattern in the substrate base
In orthographic projection on plate.
In another specific embodiment, the public electrode wire includes the metallic pattern that is arranged side by side and described transparent leads
Electrograph shape, the area of the part of the public electrode wire being so made up of metallic pattern and transparent conductive pattern be equal to metallic pattern and
Transparent conductive pattern sum, public electrode wire is equal to the area of transparent conductive pattern with the incrementss of pixel electrode facing area,
Considerably increase the storage capacitance of display base plate.
Embodiment three
Present embodiments provide a kind of display device, including display base plate as described above.The display device can be：
Any product or part with display function such as LCD TV, liquid crystal display, DPF, mobile phone, panel computer, its
In, the display device also includes flexible PCB, printed circuit board (PCB) and backboard.
The display device of the present embodiment can be the liquid crystal display of TN patterns, at least part of public due to display device
Electrode wires are made up of bearing of trend identical transparent conductive pattern and metallic pattern, transparent conductive pattern on underlay substrate just
Projection has beyond the part of orthographic projection of the metallic pattern on underlay substrate, so enables to public electrode wire with pixel electricity
The facing area of pole is more than metallic pattern and the facing area of pixel electrode so that the storage capacitance of display device is carried
It is high；Simultaneously because the increased part of facing area of public electrode wire and pixel electrode be by transparent conductive pattern caused by, and
Transparent conductive pattern does not influence the aperture opening ratio of display device because of its translucency having, therefore, it is possible to not influence display device
The storage capacitance of display device is improved in the case of aperture opening ratio, improves the display effect of display device.
In each method embodiment of the present invention, the priority that the sequence number of each step can not be used to limit each step is suitable
Sequence, for those of ordinary skill in the art, on the premise of not paying creative work, the priority change to each step
Within protection scope of the present invention.
Unless otherwise defined, the technical term or scientific terminology that the disclosure is used should be tool in art of the present invention
The ordinary meaning that the personage for having general technical ability is understood." first ", " second " that is used in the disclosure and similar word are simultaneously
Any order, quantity or importance are not indicated that, and is used only to distinguish different parts." including " or "comprising" etc.
Similar word means that the element or object that occur before the word cover the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " is not limited to physics
Or machinery connection, and can be including electrical connection, either directly still indirectly." on ", D score,
"left", "right" etc. is only used for representing relative position relation that after the absolute position for being described object changes, then the relative position is closed
System is likely to correspondingly change.
It is appreciated that ought such as layer, film, region or substrate etc element be referred to as being located at another element " on " or D score
When, the element can with it is " direct " be located at another element " on " or D score, or there may be intermediary element.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of display base plate, is included in the step of forming public electrode wire on underlay substrate, it is characterised in that
The step of forming the public electrode wire includes：
Form bearing of trend identical transparent conductive pattern and metallic pattern, the transparent conductive pattern and the metallic pattern phase
The contact composition at least partly public electrode wire, orthographic projection of the transparent conductive pattern on the underlay substrate has super
Go out the part of orthographic projection of the metallic pattern on the underlay substrate.
2. the preparation method of display base plate according to claim 1, it is characterised in that formed the transparent conductive pattern and
The metallic pattern includes：
The transparent conductive pattern and the metallic pattern are sequentially formed on the underlay substrate, the transparent conductive pattern exists
The orthographic projection of orthographic projection on the underlay substrate with the metallic pattern on the underlay substrate partially overlaps；Or
The metallic pattern and the transparent conductive pattern are sequentially formed on the underlay substrate, the transparent conductive pattern exists
The orthographic projection of orthographic projection on the underlay substrate with the metallic pattern on the underlay substrate partially overlaps.
3. the preparation method of display base plate according to claim 1, it is characterised in that formed the transparent conductive pattern and
The metallic pattern includes：
The transparent conductive pattern and the metallic pattern are formed simultaneously by a patterning processes, the metallic pattern is described
Orthographic projection on underlay substrate falls completely within the transparent conductive pattern in the orthographic projection on the underlay substrate.
4. the preparation method of display base plate according to claim 3, it is characterised in that described to pass through a patterning processes same
When form the transparent conductive pattern and the metallic pattern and include：
Sequentially form transparency conducting layer and metal level；
Photoresist is coated on the metal level, the photoresist is exposed using intermediate tone mask plate or gray tone mask plate
Light, forms photoresist and region, photoresist part reservation region and the non-reservation region of photoresist is fully retained after development；
The transparency conducting layer and metal level of the non-reservation region of photoresist are etched away, the transparent conductive pattern is formed；
The photoresist of removal photoresist part reservation region；
The metal level of photoresist part reservation region is etched away, the metallic pattern is formed；
Removal photoresist is fully retained the photoresist in region.
5. the preparation method of display base plate according to claim 3, it is characterised in that the display base plate also includes film
The grid and grid line of transistor, in a same patterning processes of the transparent conductive pattern and the metallic pattern are formed, also
Form the grid and grid line of the thin film transistor (TFT).
6. a kind of display base plate, including the public electrode wire on underlay substrate, it is characterised in that
At least part of public electrode wire is made up of bearing of trend identical transparent conductive pattern and metallic pattern, described transparent
Conductive pattern is in contact with the metallic pattern, and orthographic projection of the transparent conductive pattern on the underlay substrate is with super
Go out the part of orthographic projection of the metallic pattern on the underlay substrate.
7. display base plate according to claim 6, it is characterised in that
The public electrode wire includes the transparent conductive pattern and the metallic pattern that are stacked, the electrically conducting transparent figure
Orthographic projection of orthographic projection of the shape on the underlay substrate with the metallic pattern on the underlay substrate partially overlaps, described
Metallic pattern covers the subregion of the transparent conductive pattern；Or the transparent conductive pattern covers the portion of the metallic pattern
Subregion.
8. display base plate according to claim 6, it is characterised in that
The public electrode wire includes the transparent conductive pattern of the metallic pattern and the covering metallic pattern, the gold
Orthographic projection of the category figure on the underlay substrate falls completely within positive throwing of the transparent conductive pattern on the underlay substrate
In shadow；Or
The public electrode wire includes the transparent conductive pattern and the metallic pattern on the transparent conductive pattern,
Orthographic projection of the metallic pattern on the underlay substrate falls completely within the transparent conductive pattern on the underlay substrate
Orthographic projection in.
9. display base plate according to claim 6, it is characterised in that it is described that the public electrode wire includes being arranged side by side
Metallic pattern and the transparent conductive pattern.
10. a kind of display device, it is characterised in that including the display base plate as any one of claim 6-9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710177835.8A CN106898577A (en) | 2017-03-23 | 2017-03-23 | Display base plate and preparation method thereof, display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710177835.8A CN106898577A (en) | 2017-03-23 | 2017-03-23 | Display base plate and preparation method thereof, display device |
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| CN106898577A true CN106898577A (en) | 2017-06-27 |
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| CN112154369A (en) * | 2019-04-29 | 2020-12-29 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof, display panel and display device |
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Application publication date: 20170627 |