CN107591417A - Array base palte and preparation method thereof - Google Patents

Array base palte and preparation method thereof Download PDF

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Publication number
CN107591417A
CN107591417A CN201710868902.0A CN201710868902A CN107591417A CN 107591417 A CN107591417 A CN 107591417A CN 201710868902 A CN201710868902 A CN 201710868902A CN 107591417 A CN107591417 A CN 107591417A
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China
Prior art keywords
wire
connection electrode
lead
data lead
insulating barrier
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CN201710868902.0A
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Chinese (zh)
Inventor
李洋
孟影
张立强
郑晓东
封宾
孙鹏
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京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Priority to CN201710868902.0A priority Critical patent/CN107591417A/en
Publication of CN107591417A publication Critical patent/CN107591417A/en

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Abstract

The invention provides a kind of array base palte and preparation method thereof.Array base palte includes grid lead-out wire and data lead-out wire, in addition to the first connection electrode for being arranged in substrate and being connected with the grid lead-out wire, and the second connection electrode being connected with the data lead-out wire and the first connection electrode.The preparation method of array base palte includes:The first connection electrode and grid lead-out wire are formed in substrate, the grid lead-out wire is connected with the first connection electrode;Form data lead-out wire and the second connection electrode, second connection electrode are connected with the data lead-out wire and the first connection electrode.The present invention realizes the switching of grid lead-out wire and data lead-out wire by two or three connection electrodes, enhance antistatic effect, the risk of Electro-static Driven Comb is reduced, so as to avoid the defects of connection electrode is breakdown on the whole, and improves functional reliability to greatest extent.

Description

Array base palte and preparation method thereof

Technical field

The present invention relates to display technology field, and in particular to a kind of array base palte and preparation method thereof.

Background technology

Liquid crystal display (LiquidCrystal Display, LCD) panel is as a kind of FPD (Flat PanelDisplay, FPD) device, because having the characteristics that small volume, low in energy consumption, radiationless and cost of manufacture are relatively low, more To be applied to more in high-performance display field.LCD agent structure includes the array base palte and color membrane substrates to box, with And the liquid crystal between two substrates is filled in, array base palte is multiple including being limited by a plurality of grid line and a plurality of data lines square crossing Pixel cell, each pixel cell are provided with thin film transistor (TFT) (Thin Film Transistor, TFT).

At present, the array base palte prepared by patterning processes includes viewing area and the rim area on the outside of viewing area Domain, wherein, frame region is used to set various peripheral signal lines, forms the area being connected with control chip or flexible printed circuit board Domain.For advanced super dimension switch (Advanced Super Dimension Switch, ADS) and the advanced super dimension of high aperture The array base of field conversion (High Aperture Advanced Super Dimensional Switching, HADS) pattern Plate, because the peripheral signal line of frame region is more, same signal wire can not be arranged in single metal level, it is necessary to by it Its metal level carries out signal transmission, therefore frame region is usually provided with switching via, and using transferring, via connects different gold Belong to layer.For example, when grid lead-out wire due to a variety of causes is difficult to arrange when, it is necessary to borrow data lead-out wire conduction grid lead-out wires letter Number.The existing mode for forming exchanging structure is typically to first pass through etching mode to be formed in grid lead-out wire and data lead-out wire position Via, then the grid lead-out wire exposed in via and data lead-out wire are connected using conductive layer, reach switching purpose.

But in actual applications, there is the defects of breaking in the conductive layer of existing this exchanging structure, have a strong impact on product Quality.

The content of the invention

Technical problem to be solved of the embodiment of the present invention is to provide a kind of array base palte and preparation method thereof, to overcome The defects of breaking be present in the conductive layer of existing exchanging structure.

In order to solve the above-mentioned technical problem, the embodiments of the invention provide a kind of array base palte, including grid lead-out wire sum According to lead-out wire, in addition to the first connection electrode for being arranged in substrate and being connected with the grid lead-out wire, and with the data Lead-out wire and the second connection electrode of the first connection electrode connection.

Alternatively, the data lead-out wire is arranged on the first insulating barrier for covering first connection electrode and grid lead-out wire On, second connection electrode is arranged on the second insulating barrier for covering the data lead-out wire, is set on second insulating barrier The first via for exposing the data lead-out wire and the first connection electrode is equipped with, second connection electrode passes through described first Via is connected with the data lead-out wire and the first connection electrode respectively.

Alternatively, in addition to the 3rd connection electrode of the connection grid lead-out wire and data lead-out wire.

Alternatively, the 3rd connection electrode is arranged on the second insulating barrier for covering the data lead-out wire, and described The second via for exposing the data lead-out wire and the 3rd via for exposing the grid lead-out wire are provided with two insulating barriers, 3rd connection electrode is connected by second via with data lead-out wire, is drawn by the 3rd via and grid Line connects.

In order to solve the above-mentioned technical problem, the embodiment of the present invention additionally provides a kind of preparation method of array base palte, including:

The first connection electrode and grid lead-out wire are formed in substrate, the grid lead-out wire is connected with the first connection electrode;

Data lead-out wire and the second connection electrode are formed, second connection electrode connects with the data lead-out wire and first Receiving electrode connects.

Alternatively, the formation data lead-out wire and the second connection electrode, second connection electrode are drawn with the data Outlet connects with the first connection electrode, including:

Form the first insulating barrier for covering the grid lead-out wire and the first connection electrode, and the shape on first insulating barrier Into the data lead-out wire with via;

The second insulating barrier and the second connection electrode are formed, second connection electrode connects with the data lead-out wire and first Receiving electrode connects.

Alternatively, the second insulating barrier of the formation and the second connection electrode, second connection electrode are drawn with the data Outlet connects with the first connection electrode, including:

The second insulating barrier for covering the data lead-out wire is formed, and is formed on second insulating barrier and exposes data Lead-out wire surface and first via on the first connection electrode surface;

Form the second connection electrode, second connection electrode by first via connect the data lead-out wire and First connection electrode.

Alternatively, the second insulating barrier of the formation and the second connection electrode, second connection electrode are drawn with the data Outlet connects with the first connection electrode, including:

Form the second insulating barrier for covering the data lead-out wire, and formed on second insulating barrier the first via, Second via and the 3rd via, first via expose data lead-out wire surface and the first connection electrode surface, and described Two vias expose data lead-out wire surface, and the 3rd via exposes grid lead-out wire surface;

The second connection electrode and the 3rd connection electrode are formed, second connection electrode connects institute by first via Data lead-out wire and the first connection electrode are stated, the 3rd connection electrode is connected by second via with data lead-out wire, It is connected by the 3rd via with grid lead-out wire.

Alternatively, first connection electrode, grid lead-out wire, data lead-out wire and the second connection electrode are located at array base palte Frame region;The public electrode of first connection electrode and array base palte viewing area sets with layer and passes through a composition Technique is formed, and the gate electrode of the grid lead-out wire and the thin film transistor (TFT) of array base palte viewing area is set with layer and by once Patterning processes are formed, the source-drain electrode of the thin film transistor (TFT) of the data lead-out wire and array base palte viewing area set with layer and Formed by a patterning processes, second connection electrode and the pixel electrode of array base palte viewing area set and led to layer A patterning processes are crossed to be formed.

The embodiment of the present invention additionally provides a kind of display panel, including above-mentioned array base palte.

Array base palte that the embodiment of the present invention is provided and preparation method thereof, grid lead-out wire is realized by two connection electrodes With the switching of data lead-out wire, there is the defects of breaking in the conductive layer for effectively overcoming existing exchanging structure.Tied with existing switching Structure is compared, and first connection electrode of the present embodiment is arranged in substrate, enhances antistatic effect, reduces the wind of Electro-static Driven Comb Danger, so as to avoid the defects of connection electrode is breakdown on the whole.Meanwhile the side of three connection electrodes of the embodiment of the present invention Case, while antistatic effect is strengthened, functional reliability is also improved to greatest extent.Further, the embodiment of the present invention The preparation technology of existing array base palte can be utilized by forming exchanging structure, without increasing extra technique, it is easy to accomplish, Bu Huizeng Add production cost.

Certainly, any product or method for implementing the present invention it is not absolutely required to reach all the above excellent simultaneously Point.Other features and advantages of the present invention will illustrate in subsequent specification embodiment, also, partly implement from specification Become apparent in example, or understood by implementing the present invention.The purpose of the embodiment of the present invention and other advantages can pass through Specifically noted structure is realized and obtained in specification, claims and accompanying drawing.

Brief description of the drawings

Accompanying drawing is used for providing further understanding technical solution of the present invention, and a part for constitution instruction, with this The embodiment of application is used to explain technical scheme together, does not form the limitation to technical solution of the present invention.Accompanying drawing In the shapes and sizes of each part do not reflect actual proportions, purpose is schematically illustrate present invention.

Fig. 1 is the structural representation of existing exchanging structure;

Fig. 2 is the structural representation of exchanging structure first embodiment of the present invention;

Fig. 3 is the schematic diagram that first embodiment of the invention is formed after the first connection electrode pattern;

Fig. 4 is the schematic diagram that first embodiment of the invention is formed after grid lead-out wire and the first insulating layer pattern;

Fig. 5 is the schematic diagram that first embodiment of the invention is formed after data extraction line pattern;

Fig. 6 is the schematic diagram that first embodiment of the invention is formed after the second insulating layer pattern;

Fig. 7 is the structural representation of exchanging structure second embodiment of the present invention.

Description of reference numerals:

10-substrate;11-grid lead-out wire;12-the first insulating barrier;

13-data lead-out wire;14-the second insulating barrier;20-the first connection electrode;

30-the second connection electrode;40-the three connection electrode.

Embodiment

The embodiment of the present invention is described in further detail with reference to the accompanying drawings and examples.Following examples For illustrating the present invention, but it is not limited to the scope of the present invention.It should be noted that in the case where not conflicting, the application In embodiment and embodiment in feature can mutually be combined.

Study and find through present inventor, Electro-static Driven Comb easily occurs for the conductive layer in existing exchanging structure (Electro-Static discharge, ESD) makes conductive layer breakdown, and then conductive layer open circuit is occurred.Fig. 1 is existing turn The structural representation of binding structure.As shown in figure 1, exchanging structure is arranged on the frame region of array base palte, including it is arranged on substrate Grid lead-out wire 11 on 10, the first insulating barrier 12 of cover grid lead-out wire 11, the data being arranged on the first insulating barrier 12 are drawn Line 13, the second insulating barrier 14 of covering data lead-out wire 13, the connection electrode 15 being arranged on the second insulating barrier 14, connection electrode 15 connect grid lead-out wire 11 and data lead-out wire 13 by two vias.Wherein, two vias are opened in grid lead-out wire 11 respectively With the top of data lead-out wire 13, a via penetrates the first insulating barrier 12 and the second insulating barrier 14, exposes grid lead-out wire 11 Surface;Another via penetrates the second insulating barrier 14, exposes the surface of data lead-out wire 13.In array base palte preparation process In, it is necessary to carry out the deposition and film forming of the film layers such as metal level, non-metallic layer, oriented layer, in Multiple depositions and film forming procedure, for dimension Hold the balance of surface charge, the electronics in grid lead-out wire 11 is constantly to assembling at a of position, and the electronics in data lead-out wire 13 is not It is disconnected to assembling at the b of position, it is contemplated that the distance and resistance of electric transmission, electronics aggregate amount would generally be located than position a at the b of position It is slightly more, because carried charge is different at position a and position b, thus electrical potential difference is produced between two positions.Meanwhile relative to position a With position b, not only position is low by position c, the recess between two positions, and charge density is low, and carried charge is small, thus works as position Electrical potential difference between a and position b be more than conductive layer it is breakdown voltage resistant when, Electro-static Driven Comb will occur at the c of position, and then make Conductive layer at the c of position is breakdown to cause open circuit.

In order to overcome the conductive layer of existing exchanging structure the defects of breaking to be present, the embodiments of the invention provide a kind of array Substrate and preparation method thereof, and the display panel comprising the array base palte, different gold are realized by least two connection electrodes Belong to the switching of layer, the defects of to overcome existing exchanging structure.

First embodiment

The present embodiment illustrates technical scheme by taking transfer grid lead-out wire and data lead-out wire as an example.Fig. 2 is this hair The structural representation of bright exchanging structure first embodiment.As shown in Fig. 2 the present embodiment exchanging structure is arranged on the side of array base palte Frame region, including:

First connection electrode 20, set on the substrate 10;

Grid lead-out wire 11, set on the substrate 10, be connected with first connection electrode 20;

First insulating barrier 12, cover the first connection electrode 20 and grid lead-out wire 11;

Data lead-out wire 13, it is arranged on the first insulating barrier 12;

Second insulating barrier 14, covering data lead-out wire 13, offer expose the connection of data lead-out wire 13 and first thereon First via of electrode 20;

Second connection electrode 30, is arranged in the first via, is connected with the connection electrode 20 of data lead-out wire 13 and first.

Wherein, the first via on the second insulating barrier 14 penetrates the second insulating barrier 14, data lead-out wire 13 and first successively Insulating barrier 12, including the first sub- via and the second sub- via, the first sub- via are opened on the second insulating barrier 14, expose data The surface of lead-out wire 13, the second sub- via are arranged in the first sub- via, are opened in the insulating barrier 12 of data lead-out wire 13 and first On, the surface of the first connection electrode 20 is exposed, it is electric so as to form while expose the surface of data lead-out wire 13 and the first connection First via on the surface of pole 20, the second connection electrode 30 is set to be connected by the first via simultaneous connection according to lead-out wire 13 and first Electrode 20, realize the switching of grid lead-out wire 11 and data lead-out wire 13.

In the present embodiment exchanging structure, the electronics in grid lead-out wire 11 is constantly to aggregation at position 1, data lead-out wire 13 In electronics constantly assemble at position 2, but because position 1 and the distance between position 2 are close, data lead-out wire 13 is in place Put 2 transmitting range it is also shorter so that the electronics of the electronics of grid lead-out wire 11 and data lead-out wire 13 can be shifted mutually in time, The electrical potential difference between position 1 and position 2 is reduced, enhances antistatic effect, avoids the breakdown situation of connection electrode.This Outside, because second connection electrode of the present embodiment is provided only in via, and area is smaller, reduces the naked of substrate surface electrode Show up product, reduce further the risk of Electro-static Driven Comb.

The embodiments of the invention provide a kind of array base palte, realizes that grid lead-out wire and data are drawn by two connection electrodes The defects of breaking be present in the switching of line, the conductive layer for effectively overcoming existing exchanging structure.Conductive layer, two are used with existing The exchanging structure of individual via is compared, and the present embodiment uses two connection electrodes and a via structure, and the first connection electrode is set Put in substrate, enhance antistatic effect, reduce the risk of Electro-static Driven Comb, so as to avoid connection electrode quilt on the whole The defects of breakdown.

The technical scheme of the present embodiment is further illustrated below by preparation process.Wherein, " structure described in the present embodiment Figure technique " includes the processing such as depositional coating, coating photoresist, mask exposure, development, etching, stripping photoresist, is existing maturation Preparation technology.Deposition can use the already known processes such as sputtering, evaporation, chemical vapor deposition, and coating can use known coating work Skill, etching can use known method, not do specific restriction herein.

In first time patterning processes, the first connection electrode pattern is formed by patterning processes.Form the first connection electrode bag Include:A conductive film is deposited on the substrate 10, one layer of photoresist is coated on conductive film, using monotone mask plate to photoetching Glue is exposed and developed, and the region between grid lead-out wire and data lead-out wire forms unexposed area, remains with photoresist, Complete exposure area is formed in other positions, photoresist is removed, the conductive film of complete exposure area is performed etching and shelled From remaining photoresist, the pattern of the first connection electrode 20 is formed, as shown in Figure 3.Wherein, substrate can use substrate of glass or stone English substrate, conductive film can use transparent conductive film, such as tin indium oxide ITO or indium zinc oxide IZO, can also use metal One or more in film, such as platinum Pt, ruthenium Ru, golden Au, silver-colored Ag, molybdenum Mo, chromium Cr, aluminium Al, tantalum Ta, titanium Ti, tungsten W metals.

In second of patterning processes, form grid by patterning processes and draw line pattern.Forming grid extraction line pattern includes: One first metallic film is deposited in substrate formed with aforementioned pattern, one layer of photoresist is coated on the first metallic film, is used Monotone mask plate is exposed and developed to photoresist, forms unexposed area in grid lead-out wire pattern position, remains with light Photoresist, complete exposure area is formed in other positions, photoresist is removed, and the first metallic film of complete exposure area is carried out Etch and peel off remaining photoresist, form the pattern of grid lead-out wire 11, grid lead-out wire 11 is connected with the first connection electrode 20.With Afterwards, depositing first insulator layer 12, the cover grid lead-out wire 11 of the first insulating barrier 12 and the pattern of the first connection electrode 20, as shown in Figure 4. Wherein, the first metallic film can use the gold such as platinum Pt, ruthenium Ru, golden Au, silver-colored Ag, molybdenum Mo, chromium Cr, aluminium Al, tantalum Ta, titanium Ti, tungsten W One or more in category.First insulating barrier can use silicon nitride SiNx, silicon oxide sio x or SiNx/SiOx THIN COMPOSITE Film.

In third time patterning processes, form data by patterning processes and draw line pattern.Form data and draw line pattern bag Include:One second metallic film is deposited in the substrate formed with aforementioned pattern, one layer of photoresist is coated on the second metallic film, Photoresist is exposed and developed using monotone mask plate, the pattern of data lead-out wire 13 with via is formed, such as Fig. 5 institutes Show.Orthographic projection of the via in substrate is located at orthographic projection scope of first connection electrode 20 in substrate on data lead-out wire 13 It is interior.Wherein, the second metallic film can use platinum Pt, ruthenium Ru, golden Au, silver-colored Ag, molybdenum Mo, chromium Cr, aluminium Al, tantalum Ta, titanium Ti, tungsten W Deng the one or more in metal.The shape of via is unlimited, can be circular, oval, rectangle or rhombus etc., can use wet Method etching mode.

In 4th patterning processes, the second insulating layer pattern with the first via is formed by patterning processes.Form the Two insulating layer patterns include:One second insulating barrier 14 is deposited in the substrate formed with aforementioned pattern, on the second insulating barrier 14 One layer of photoresist is coated, photoresist is exposed and developed using monotone mask plate, first is formed and crosses sectional hole patterns, such as Fig. 6 It is shown.First via penetrates the second insulating barrier 14, the insulating barrier 12 of data lead-out wire 13 and first successively, including the first sub- via and Second sub- via, the first sub- via are opened on the second insulating barrier 14, expose the surface of data lead-out wire 13, the second sub- via Positioned in the first sub- via, being opened on the insulating barrier 12 of data lead-out wire 13 and first, the first connection electrode 20 is exposed Surface.That is, orthographic projection of the second sub- via in substrate is located at the first sub- via in the range of the orthographic projection in substrate, So as to form while expose first via on the surface of data lead-out wire 13 and the surface of the first connection electrode 20.Wherein, second is exhausted Edge layer can use silicon nitride SiNx, silicon oxide sio x or SiNx/SiOx laminated film, can use dry etching mode, Ensure that the area of the first sub- via is more than the area of the second sub- via, to expose the surface of data lead-out wire 13.

In 5th patterning processes, the second connection electrode pattern is formed by patterning processes.Form the second connection electrode figure Case includes:A conductive film is deposited in the substrate formed with aforementioned pattern, one layer of photoresist is coated on conductive film, is used Monotone mask plate is exposed and developed to photoresist, and the pattern of the second connection electrode 30 is formed in the first via, such as Fig. 2 institutes Show.Due to exposing the surface of data lead-out wire 13 and the surface of the first connection electrode 20 simultaneously in the first via, therefore make the second company Receiving electrode 30, according to the connection electrode 20 of lead-out wire 13 and first, finally realizes grid lead-out wire 11 by the first via simultaneous connection With the switching of data lead-out wire 13.During actual implementation, the second connection electrode 30 can also be formed in the first via and the first mistake The neighboring area in hole.Wherein, conductive film can use transparent conductive film, such as tin indium oxide ITO or indium zinc oxide IZO, Metallic film can be used, in the metals such as platinum Pt, ruthenium Ru, golden Au, silver-colored Ag, molybdenum Mo, chromium Cr, aluminium Al, tantalum Ta, titanium Ti, tungsten W It is one or more.

It is actual to implement although above the exchanging structure of the present embodiment is illustrated by taking five patterning processes as an example When, other modes of composition can also be used, the present invention is not particularly limited herein.For example, can be initially formed grid draws line pattern, Then the first connection electrode pattern is re-formed.And for example, the present embodiment exchanging structure can use four patterning processes to prepare, by the Patterning processes and second of patterning processes are merged into one using intermediate tone mask version or the composition work of gray tone mask plate Skill.It can specifically include:Conductive film and the first metallic film are sequentially depositing in substrate, one is coated on the first metallic film Layer photoresist, ladder exposure is carried out to photoresist using intermediate tone mask version or gray tone mask plate and developed, in grid lead-out wire Pattern position forms unexposed area, has the photoresist of first thickness, and forming part in the first connection electrode pattern position exposes Light region, there is the photoresist of second thickness, complete exposure area, unglazed photoresist are formed in remaining position, first thickness is more than Second thickness.The first metallic film and conductive film of complete exposure area are etched away by first time etching technics, carries out light Photoresist ashing is handled, and photoresist is removed second thickness on the whole, the first metallic film for exposing partial exposure area is thin Film, by the first metallic film of second of etching technics etch away sections exposure area, remaining photoresist is peeled off, formed The grid lead-out wire of interconnection and the first connection electrode pattern.It is with five patterning processes differences, below grid lead-out wire Remain with conductive film.

During actual implementation, the preparation process of exchanging structure can be arranged to and viewing area on array base palte on array base palte Array structure preparation process synchronously carry out.For example, for ADS patterns and HADS patterns, the first connection electrode and viewing area The public electrode in domain sets with layer and realizes that the gate electrode of grid lead-out wire and thin film transistor (TFT) is set with layer by a patterning processes Put and realized by a patterning processes, the source-drain electrode of data lead-out wire and thin film transistor (TFT) sets with layer and passes through a structure Figure technique realizes that the pixel electrode of the second connection electrode and viewing area sets with layer and realized by a patterning processes.By This is visible, and the present embodiment, which forms exchanging structure, can utilize the preparation technology of existing array base palte, without increasing extra technique, Mask plate design need to only be changed, it is easy to accomplish, production cost will not be increased.

The array base palte that the present embodiment is provided, not only go for ADS patterns and HADS patterns, and can also answer For other patterns, such as aligned twisted (Twisted Nematic, TN) pattern.The thin film transistor (TFT) of array base palte viewing area It can be bottom grating structure or top gate structure, can be non-crystalline silicon (a-Si) thin film transistor (TFT) or low-temperature polysilicon Silicon (LTPS) thin film transistor (TFT) or oxide (Oxide) thin film transistor (TFT), do not do specific restriction herein.

Second embodiment

Fig. 7 is the structural representation of exchanging structure second embodiment of the present invention.The present embodiment is based on first embodiment One kind extension, unlike first embodiment, the present embodiment realizes that grid lead-out wire and data are drawn using three connection electrodes The switching of line.

As shown in fig. 7, the present embodiment exchanging structure is arranged on the frame region of array base palte, including:

First connection electrode 20, set on the substrate 10;

Grid lead-out wire 11, set on the substrate 10, be connected with first connection electrode 20;

First insulating barrier 12, cover the first connection electrode 20 and grid lead-out wire 11;

Data lead-out wire 13, it is arranged on the first insulating barrier 12;

Second insulating barrier 14, covering data lead-out wire 13, offer expose the connection of data lead-out wire 13 and first thereon First via of electrode 20, the second via for exposing data lead-out wire 13, the 3rd via for exposing grid lead-out wire 1;

Second connection electrode 30, is arranged in the first via, is connected with the connection electrode 20 of data lead-out wire 13 and first;

3rd connection electrode 40, it is arranged on the second insulating barrier 14, is connected by the second via with data lead-out wire 13, is led to The 3rd via is crossed to be connected with grid lead-out wire 11.

Wherein, the structure of first via is identical with aforementioned first embodiment on the second insulating barrier 14, makes the second connection electrode 30 by the first via simultaneous connection according to the connection electrode 20 of lead-out wire 13 and first, and then realize grid lead-out wire 11 and data The switching all the way of lead-out wire 13.Second via only penetrates the second insulating barrier 14, exposes the surface of data lead-out wire 13, the 3rd mistake Hole penetrates the insulating barrier 12 of the second insulating barrier 14 first successively, exposes the surface of grid lead-out wire 11.So, the 3rd connection electrode 40 By exposing the surface of grid lead-out wire 11 and two, 13 surface of data lead-out wire via respectively, grid lead-out wire 11 and data are realized The another way switching of lead-out wire 13.

The present embodiment forms the exchanging structure of two-way grid lead-out wire and data lead-out wire, wherein, it is that " grid are drawn all the way Three connection electrodes of line-the-data lead-out wire ", another way are " the-the second connection electrodes of the-the first connection electrode of grid lead-out wire-data Lead-out wire ", equivalent to there is two closed-loop paths, two loops are not interfere with each other two-way exchanging structure, parallel-connection structure are formed, as long as having The conducting of one loop can normal work, while reducing Electro-static Driven Comb risk, avoiding connection electrode breakdown, to greatest extent Improve functional reliability.

The embodiments of the invention provide a kind of array base palte, realizes that grid lead-out wire and data are drawn by three connection electrodes The switching of line, be present the defects of breaking in the conductive layer for not only effectively overcoming existing exchanging structure, and improve to greatest extent Functional reliability.

The preparation process of the present embodiment exchanging structure includes:

The process and foregoing first for forming the first connection electrode, grid lead-out wire, the first insulating barrier and data lead-out wire are implemented Example is identical, repeats no more here.

Then, the second insulating layer pattern with the first via, the second via and the 3rd via is formed by patterning processes. Forming the second insulating layer pattern includes:One second insulating barrier is deposited in the substrate formed with aforementioned pattern, in the second insulating barrier It is upper coating one layer of photoresist, photoresist is exposed and developed using monotone mask plate, the first via, the second via and 3rd via pattern position forms complete exposure area, and photoresist is removed, and forms unexposed area in other positions, remains with Photoresist.The second insulating barrier of complete exposure area and the first insulating barrier are performed etching using dry etch process, and peeled off Remaining photoresist, form the second insulating layer pattern with the first via, the second via and the 3rd via.

Finally, the second connection electrode and the 3rd connection electrode pattern are formed by patterning processes.Form the second connection electrode Include with the 3rd connection electrode pattern:A conductive film is deposited in the substrate formed with aforementioned pattern, is applied on conductive film One layer of photoresist is covered, photoresist is exposed and developed using monotone mask plate, is connected in the second connection electrode and the 3rd Electrode pattern position forms unexposed area, remains with photoresist, forms complete exposure area in other positions, photoresist is gone Remove, the conductive film of complete exposure area is performed etching and peels off remaining photoresist, form the second connection electrode and the 3rd Connection electrode pattern.Second connection electrode is connected by the first via with data lead-out wire and the first connection electrode, the 3rd connection Electrode is connected by the second via with data lead-out wire, is connected by the 3rd via with grid lead-out wire, so as to realize that two-way grid draw Outlet and the exchanging structure of data lead-out wire.

3rd embodiment

On the basis of foregoing first~second embodiment technical scheme, present invention also provides a kind of preparation of array base palte Method, including:

S1, the first connection electrode and grid lead-out wire are formed in substrate, the grid lead-out wire is connected with the first connection electrode;

S2, form data lead-out wire and the second connection electrode, second connection electrode and the data lead-out wire and the One connection electrode connects.

Wherein, in one embodiment, step S1 includes:

The first connection electrode is formed in substrate, grid lead-out wire is formed in substrate, the grid lead-out wire is connected with first Electrode connects.

In another embodiment, step S1 includes:

Grid lead-out wire is formed in substrate, the first connection electrode is formed in substrate, first connection electrode is drawn with grid Outlet connects.

In yet another embodiment, step S1 includes:

Conductive film and the first metallic film are sequentially depositing in substrate, passes through halftoning or the composition of gray tone mask plate Technique forms the grid lead-out wire being connected with each other and the first connection electrode.

Wherein, step S2 includes:

S21, the first insulating barrier for covering the grid lead-out wire and the first connection electrode is formed, and in first insulating barrier It is upper to form the data lead-out wire with via;

S22, form the second insulating barrier and the second connection electrode, second connection electrode and the data lead-out wire and the One connection electrode connects.

Wherein, step S21 includes:

Depositing first insulator layer, first insulating barrier cover the grid lead-out wire and the first connection electrode;Deposition second Metallic film, the data lead-out wire with via is formed by the patterning processes of monotone mask plate.

Wherein, in one embodiment, step S22 includes:

The second insulating barrier for covering the data lead-out wire is formed, and is formed on second insulating barrier and exposes data Lead-out wire surface and first via on the first connection electrode surface;

Form the second connection electrode, second connection electrode by first via connect the data lead-out wire and First connection electrode.

In another embodiment, step S22 includes:

Form the second insulating barrier for covering the data lead-out wire, and formed on second insulating barrier the first via, Second via and the 3rd via, first via expose data lead-out wire surface and the first connection electrode surface, and described Two vias expose data lead-out wire surface, and the 3rd via exposes grid lead-out wire surface;

The second connection electrode and the 3rd connection electrode are formed, second connection electrode connects institute by first via Data lead-out wire and the first connection electrode are stated, the 3rd connection electrode is connected by second via with data lead-out wire, It is connected by the 3rd via with grid lead-out wire.

The embodiments of the invention provide a kind of preparation method of array base palte, and grid are realized by two or three connection electrodes The defects of breaking be present in the switching of lead-out wire and data lead-out wire, the conductive layer for effectively overcoming existing exchanging structure.With it is existing Exchanging structure is compared, and present embodiment enhances antistatic effect, reduces the risk of Electro-static Driven Comb, so as to avoid on the whole The defects of connection electrode is breakdown.

Fourth embodiment

Inventive concept based on previous embodiment, the embodiment of the present invention additionally provide a kind of display panel, the display panel Including the array base palte using previous embodiment.Display panel can be:Mobile phone, tablet personal computer, television set, display, notes Any product or part with display function such as this computer, DPF, navigator.

In the description of the embodiment of the present invention, it is to be understood that term " middle part ", " on ", " under ", "front", "rear", The orientation or position relationship of the instruction such as " vertical ", " level ", " top ", " bottom " " interior ", " outer " be based on orientation shown in the drawings or Position relationship, it is for only for ease of and describes the present invention and simplify description, rather than indicates or imply that signified device or element must There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.

, it is necessary to which explanation, unless otherwise clearly defined and limited, term " are pacified in the description of the embodiment of the present invention Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integratedly Connection;Can be mechanical connection or electrical connection;Can be joined directly together, can also be indirectly connected by intermediary, It can be the connection of two element internals.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition The concrete meaning of language in the present invention.

Although disclosed herein embodiment as above, described content be only readily appreciate the present invention and use Embodiment, it is not limited to the present invention.Technical staff in any art of the present invention, taken off not departing from the present invention On the premise of the spirit and scope of dew, any modification and change, but the present invention can be carried out in the form and details of implementation Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.

Claims (10)

  1. A kind of 1. array base palte, it is characterised in that including grid lead-out wire and data lead-out wire, in addition to be arranged in substrate and with First connection electrode of the grid lead-out wire connection, and second be connected with the data lead-out wire and the first connection electrode connect Receiving electrode.
  2. 2. array base palte according to claim 1, it is characterised in that the data lead-out wire is arranged on covering described first On first insulating barrier of connection electrode and grid lead-out wire, second connection electrode is arranged on the of the covering data lead-out wire On two insulating barriers, the first mistake for exposing the data lead-out wire and the first connection electrode is provided with second insulating barrier Hole, second connection electrode are connected with the data lead-out wire and the first connection electrode respectively by first via.
  3. 3. array base palte according to claim 1 or 2, it is characterised in that also include connecting the grid lead-out wire and data 3rd connection electrode of lead-out wire.
  4. 4. array base palte according to claim 3, it is characterised in that the 3rd connection electrode is arranged on the covering number The second via for exposing the data lead-out wire according on the second insulating barrier of lead-out wire, being provided with second insulating barrier and The 3rd via of the grid lead-out wire is exposed, the 3rd connection electrode passes through second via and data lead-out wire Connection, is connected by the 3rd via with grid lead-out wire.
  5. A kind of 5. preparation method of array base palte, it is characterised in that including:
    The first connection electrode and grid lead-out wire are formed in substrate, the grid lead-out wire is connected with the first connection electrode;
    Form data lead-out wire and the second connection electrode, second connection electrode are connected electricity with the data lead-out wire and first Pole connects.
  6. 6. preparation method according to claim 5, it is characterised in that the formation data lead-out wire and the second connection electricity Pole, second connection electrode are connected with the data lead-out wire and the first connection electrode, including:
    The first insulating barrier for covering the grid lead-out wire and the first connection electrode is formed, and tool is formed on first insulating barrier There is the data lead-out wire of via;
    The second insulating barrier and the second connection electrode are formed, second connection electrode is connected electricity with the data lead-out wire and first Pole connects.
  7. 7. preparation method according to claim 6, it is characterised in that the second insulating barrier of the formation and the second connection electricity Pole, second connection electrode are connected with the data lead-out wire and the first connection electrode, including:
    The second insulating barrier for covering the data lead-out wire is formed, and is formed on second insulating barrier and exposes data extraction Line surface and first via on the first connection electrode surface;
    The second connection electrode is formed, second connection electrode connects the data lead-out wire and first by first via Connection electrode.
  8. 8. preparation method according to claim 6, it is characterised in that the second insulating barrier of the formation and the second connection electricity Pole, second connection electrode are connected with the data lead-out wire and the first connection electrode, including:
    The second insulating barrier for covering the data lead-out wire is formed, and the first via, second are formed on second insulating barrier Via and the 3rd via, first via expose data lead-out wire surface and the first connection electrode surface, second mistake Hole exposes data lead-out wire surface, and the 3rd via exposes grid lead-out wire surface;
    The second connection electrode and the 3rd connection electrode are formed, second connection electrode connects the number by first via According to lead-out wire and the first connection electrode, the 3rd connection electrode is connected by second via with data lead-out wire, is passed through 3rd via is connected with grid lead-out wire.
  9. 9. according to any described preparation method of claim 5~8, it is characterised in that first connection electrode, grid are drawn Line, data lead-out wire and the second connection electrode are located at the frame region of array base palte;First connection electrode and array base palte The public electrode of viewing area sets with layer and formed by a patterning processes, the grid lead-out wire and array base palte viewing area The gate electrode of the thin film transistor (TFT) in domain sets and formed by a patterning processes, the data lead-out wire and array base palte with layer The source-drain electrode of the thin film transistor (TFT) of viewing area sets and formed by a patterning processes, second connection electrode with layer Set with layer with the pixel electrode of array base palte viewing area and formed by a patterning processes.
  10. 10. a kind of display panel, it is characterised in that including the array base palte as described in Claims 1 to 4 is any.
CN201710868902.0A 2017-09-22 2017-09-22 Array base palte and preparation method thereof CN107591417A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079859A1 (en) * 2006-09-28 2008-04-03 Epson Imaging Devices Corporation Liquid crystal display panel
CN102540595A (en) * 2010-12-31 2012-07-04 京东方科技集团股份有限公司 Array substrate, manufacturing method thereof and liquid crystal panel
CN104678671A (en) * 2015-03-30 2015-06-03 京东方科技集团股份有限公司 Display substrate, manufacturing method of display substrate, and display device
CN104882452A (en) * 2015-06-05 2015-09-02 合肥鑫晟光电科技有限公司 Array substrate, display panel, and manufacturing method of array substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079859A1 (en) * 2006-09-28 2008-04-03 Epson Imaging Devices Corporation Liquid crystal display panel
CN102540595A (en) * 2010-12-31 2012-07-04 京东方科技集团股份有限公司 Array substrate, manufacturing method thereof and liquid crystal panel
CN104678671A (en) * 2015-03-30 2015-06-03 京东方科技集团股份有限公司 Display substrate, manufacturing method of display substrate, and display device
CN104882452A (en) * 2015-06-05 2015-09-02 合肥鑫晟光电科技有限公司 Array substrate, display panel, and manufacturing method of array substrate

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