CN106896857B - Load transient response applied to linear voltage regulator strengthens circuit - Google Patents
Load transient response applied to linear voltage regulator strengthens circuit Download PDFInfo
- Publication number
- CN106896857B CN106896857B CN201710158975.0A CN201710158975A CN106896857B CN 106896857 B CN106896857 B CN 106896857B CN 201710158975 A CN201710158975 A CN 201710158975A CN 106896857 B CN106896857 B CN 106896857B
- Authority
- CN
- China
- Prior art keywords
- metal
- oxide
- semiconductor
- voltage
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
The invention discloses a kind of load transient response applied to linear voltage regulator to strengthen circuit, mainly solves the problems, such as that linear voltage regulator load transient response is not fast enough.Load transient response enhancing circuit is made of voltage follower unit and variable reference voltage unit.The first output voltage and the negatively correlated relation of load current in variable reference voltage unit, with the power tube of this linear adjustment voltage-stablizer, achieve the purpose that to strengthen transient response.
Description
Technical field
The invention belongs to physical technology field, the one kind further related in electronic circuit technology field is applied to linearly
The load transient response enhancing circuit of voltage-stablizer.The present invention can be linear steady for improving as the pith of linear voltage regulator
The load transient response of depressor.
Background technology
With the development of integrated circuit and electronic technology, substantial amounts of portable set has become indispensable in people's life
Product, wherein linear voltage regulator due to its low cost, low noise and high-precision advantage and be widely adopted.Load transient
Response is an important indicator of linear voltage regulator, therefore, it is necessary to study the load transient response enhancing electricity of linear voltage regulator
Road.
Patented technology " the LDO REGULATOR WITH that research and development Co., Ltd of STMicw Electronics (Shenzhen) possesses at it
IMPROVED LOAD TRANSIENT PERFORMANCE FOR INTERNAL POWER SUPPLY " (Authorization Notice No. US
A kind of circuit for improving linear voltage regulator load regulation is disclosed in 9,454,166B2).The circuit include error amplifier,
Feedback resistance, power tube and load transient response enhancing circuit.The circuit is realized when load transients change, and loop can be very
Fast response.But the deficiency that the patented technology still has is：Due to the circuit requirement some resistance, metal-oxide-semiconductor complete one
Cause, it is actual difficult to realize in the fabrication process due to the deviation of manufacturing process；Meanwhile circuit need to realize the transfer of voltage with
The change of inductive output voltage, in this course, it is necessary to by capacitance charging, this can cause the load wink of linear voltage regulator
State response is slower.
Meeting paper " A Capacitor-Free, the Fast Transient that Xiao Tang, Lenian He are delivered at it
Response CMOS Low-Dropout Regulator with Multiple-Loop Control”(ASIC(ASICON),
2011IEEE 9th International Conference) in propose a kind of increasing of linear voltage regulator load transient response
Forceful electric power road.The circuit includes error amplifier, feedback resistance, power tube, CE (comparator enhacement) modules and DE
(differentiator enhacement) module.The method that the paper is proposed can improve the load wink of linear voltage regulator
State responds.But the deficiency that the technology still has is：Since linear voltage regulator is there are three loops, in the stability of circuit
Aspect can there are certain risk, it is necessary to very with caution, meanwhile, newly-increased two loops also increase the chip area of chip.
The content of the invention
Not enough soon and adopted it is an object of the invention to the linear voltage regulator load transient response for the above-mentioned prior art
After load transient response circuit, the problem of system loop easy unstability, propose a kind of applied to the negative of linear voltage regulator
Transient response enhancing circuit is carried, improves its application in actual circuit.
To achieve these goals, the present invention proposes what is be made of voltage follower unit and variable reference voltage unit
Load transient response strengthens circuit.
The voltage follower unit includes bias current device IBIAS, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd
Metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4；
The variable reference voltage unit includes reference current device IREF, sample rate current circuit, the 5th metal-oxide-semiconductor M5, the 6th
Metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9；
Bias current device I in the voltage follower unitBIASA termination supply voltage VIN, another termination first
The source electrode of metal-oxide-semiconductor M1；The grid of first metal-oxide-semiconductor M1 meets bias voltage Vref, drain and connect the drain electrode of the 3rd metal-oxide-semiconductor M3；2nd MOS
The source electrode of pipe M2 connects with the source electrode of the first metal-oxide-semiconductor M1, the drain electrode of the second metal-oxide-semiconductor M2 connect with its grid after with the 4th metal-oxide-semiconductor
The drain electrode of M4 is connected；The grid of 3rd metal-oxide-semiconductor M3 drains with it connect after be connected with the grid of the 4th metal-oxide-semiconductor M4, the 3rd metal-oxide-semiconductor
The source electrode earth level of M3 and the 4th metal-oxide-semiconductor M4；
After the source electrode of the 5th metal-oxide-semiconductor M5 and the source electrode of the 6th metal-oxide-semiconductor M6 in the variable voltage circuit unit connect,
It is connected with supply voltage VIN, after the grid of the 5th metal-oxide-semiconductor M5 connects with drain electrode, is connected with the grid of the 6th metal-oxide-semiconductor M6, the 5th
The drain electrode of metal-oxide-semiconductor M5 connects the output terminal of sample rate current circuit；Grid and leakage of the drain electrode of 6th metal-oxide-semiconductor M6 with the 7th metal-oxide-semiconductor M7
Pole connects；The source electrode of 7th metal-oxide-semiconductor M7 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4 and the drain electrode of the second metal-oxide-semiconductor M2；8th metal-oxide-semiconductor
The drain electrode of M8 meets supply voltage VIN, grid connects the grid of the 7th metal-oxide-semiconductor M7, source electrode and reference current IREFOne end connect after with
The grid of 9th metal-oxide-semiconductor M9 is connected；Reference current device IREFOther end earth level；The source electrode of 9th metal-oxide-semiconductor M9 connects power supply electricity
Press VIN, drain and meet the first output voltage VG。
The present invention has the following advantages compared with prior art：
1st, the load transient response circuit proposed in circuit of the present invention, passes through the 5th in variable reference voltage unit
The drain electrode of metal-oxide-semiconductor M5 is connected with the output terminal of sample rate current circuit, and the 8th metal-oxide-semiconductor source electrode is connected with the grid of the 9th metal-oxide-semiconductor M9,
The drain electrode of 9th metal-oxide-semiconductor is connected with the first output voltage, realizes the first output voltage and changes with the sample rate current as load
Negative correlation, with the grid end voltage of this linear adjustment voltage-stablizer power tube, achievees the purpose that to strengthen transient response, overcomes existing skill
The problem of load transient response is slower in art so that the present invention has the advantages that load transient response is very fast.
2nd, since the drain electrode of the second metal-oxide-semiconductor M2 in the voltage follower unit of the present invention connects with its grid, the 3rd
The grid of metal-oxide-semiconductor M3 drains with it to connect, and the grid of the 5th metal-oxide-semiconductor M5 in variable voltage circuit unit connects with drain electrode, the
The grid of seven metal-oxide-semiconductor M7 connects with drain electrode so that and the limit caused by load transient response enhancing circuit is respectively positioned on high frequency treatment, gram
The problem of having taken the caused linear voltage regulator stability of the prior art so that the present invention has to be born in enhancing linear voltage regulator
While carrying transient response, the advantages of can ensureing linear voltage regulator stability.
Brief description of the drawings
Fig. 1 is the electrical schematic diagram of the present invention；
Fig. 2 is the circuit diagram of the linear voltage regulator proposed by the present invention for strengthening circuit using load transient.
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
With reference to Fig. 1, the circuit structure of the present invention is described as follows.
The present invention includes voltage follower unit, variable voltage element.
Voltage follower unit includes bias current device IBIAS, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2,
3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4.
Bias current device I in voltage follower unitBIASA termination supply voltage VIN, the supply voltage VINUsing
DC voltage, in the range of 3V-6V, the source electrode of the first metal-oxide-semiconductor M1 of another termination；The grid of first metal-oxide-semiconductor M1 connects reference voltage
Vref, the bias voltage VrefUsing DC voltage, in the range of 1.4V-4V, drain electrode connects the drain electrode of the 3rd metal-oxide-semiconductor M3；Second
The source electrode of metal-oxide-semiconductor M2 connects with the source electrode of the first metal-oxide-semiconductor M1, the drain electrode of the second metal-oxide-semiconductor M2 connect with its grid after with the 4th MOS
The drain electrode of pipe M4 is connected；The grid of 3rd metal-oxide-semiconductor M3 drains with it connect after be connected with the grid of the 4th metal-oxide-semiconductor M4, the 3rd MOS
The source electrode earth level of pipe M3 and the 4th metal-oxide-semiconductor M4.
First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 use p-type Metal-oxide-semicondutor pipe, the 3rd metal-oxide-semiconductor M3, the 4th
Metal-oxide-semiconductor M4 uses N-type Metal-oxide-semicondutor pipe.
The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 9th metal-oxide-semiconductor M9 are adopted
With p-type Metal-oxide-semicondutor pipe.
The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8 use N-type metal-oxygen
Compound-transistor.
First metal-oxide-semiconductor M1 is equal with the breadth length ratio of the second metal-oxide-semiconductor M2, the breadth length ratio of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4
It is equal.7th metal-oxide-semiconductor M7 is equal with the breadth length ratio of the 8th metal-oxide-semiconductor M8.
The ratio between breadth length ratio of 5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 is 8：1.
The operation principle of voltage follower in the present invention is：
If the grid end voltage of the first metal-oxide-semiconductor M1 is less than the grid end voltage of the second metal-oxide-semiconductor M2, the second metal-oxide-semiconductor M2 is flowed through
Electric current be less than and flow through the electric current of the first metal-oxide-semiconductor M1, the electric current due to flowing through the 3rd metal-oxide-semiconductor is equal to the electricity for flowing through the first metal-oxide-semiconductor
Stream, the electric current of the 3rd metal-oxide-semiconductor M3 of current mirror of the 4th metal-oxide-semiconductor M4, therefore the electric current for flowing through the second metal-oxide-semiconductor M2, which are less than, flows through the
The electric current of four metal-oxide-semiconductor M4, so, the grid voltage of the second metal-oxide-semiconductor M2 reduces, and finally, realizes the grid voltage of the second metal-oxide-semiconductor M2
Equal to the grid voltage of the first metal-oxide-semiconductor M1.
Pass through the constantly regulate of voltage follower internal circuit so that the grid voltage of the second metal-oxide-semiconductor M2 is equal to the first MOS
The grid voltage of pipe M1, realizes the function of voltage follow.
Variable voltage element includes reference current device IREF, sample rate current circuit, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the
Seven metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9.
After the source electrode of the 5th metal-oxide-semiconductor M5 and the source electrode of the 6th metal-oxide-semiconductor M6 in variable voltage circuit unit connect, with power supply
Voltage VINIt is connected, after the grid of the 5th metal-oxide-semiconductor M5 connects with drain electrode, is connected with the grid of the 6th metal-oxide-semiconductor M6, the 5th metal-oxide-semiconductor M5
Drain electrode connect the output terminal of sample rate current circuit；The drain electrode of 6th metal-oxide-semiconductor M6 connects with the grid of the 7th metal-oxide-semiconductor M7 with drain electrode；
The source electrode of 7th metal-oxide-semiconductor M7 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4 and the drain electrode of the second metal-oxide-semiconductor M2；The drain electrode of 8th metal-oxide-semiconductor M8
Meet supply voltage VIN, grid connects the grid of the 7th metal-oxide-semiconductor M7, source electrode and reference current IREFOne end connect after with the 9th metal-oxide-semiconductor
The grid of M9 is connected；Reference current device IREFOther end earth level；The source electrode of 9th metal-oxide-semiconductor M9 meets supply voltage VIN, drain electrode
Meet the first output voltage VG。
The operation principle of variable voltage circuit in the present invention is：
Sample rate current circuit sampling load current, while the electric current flows through the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 is with certain
The 5th metal-oxide-semiconductor M5 of scaled mirror electric current, the electric current of the 7th metal-oxide-semiconductor M7 is equal to the electric current of the 6th metal-oxide-semiconductor M6, because the 7th
The source voltage of metal-oxide-semiconductor M7 is certain value Vref, then when load current becomes larger, the grid voltage increase of the 7th metal-oxide-semiconductor M7, again
Because the electric current of the 8th metal-oxide-semiconductor M8 is certain value IREF, then the source voltage increase of the 8th metal-oxide-semiconductor M8, so that the 9th MOS
The drain voltage VG of pipe M9 reduces, and the power tube of linear adjustment voltage-stablizer carrys out the change of responsive load；When load current change is small,
The grid voltage of 7th metal-oxide-semiconductor M7 reduces, and because the electric current of the 8th metal-oxide-semiconductor M8 is certain value IREF, then the 8th metal-oxide-semiconductor M8
Source voltage reduces, so that the drain voltage VG increases of the 9th metal-oxide-semiconductor M9.Therefore, variable voltage circuit realizes one
With the first output voltage VG of the negatively correlated change of load current, i.e., when load current becomes larger, the first output voltage VG reduces；It is negative
Carry electric current and become hour, the first output voltage VG increases.
Fig. 2 gives load transient response of the present invention enhancing circuit and applies an application example in linear voltage regulator.
With reference to Fig. 2, the present invention includes error amplifier EA, load transient response enhancing circuit, power tube MP, sampling pipe
MS, feedback resistance R1, R2, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, load ZL。
One end input of error amplifier EA meets reference voltage VREF, and the other end inputs reversed feedthrough voltage VFB, output termination
The grid of power tube MP.
One end input of load transient response enhancing circuit meets bias voltage Vref, the other end input connect sample rate current circuit
Output, the grid of output termination power tube MP.
The source electrode of power tube MP meets supply voltage VIN, and grid connects the grid of sampling pipe MS, and drain electrode connects the one of feedback resistance R1
End.
The source electrode of sampling pipe MS meets supply voltage VIN, and drain electrode connects the drain electrode of the 11st metal-oxide-semiconductor M11.
The other end of feedback resistance R1 connects one end of feedback resistance R2, the other end earth level of feedback resistance R2.
The source electrode earth level of tenth metal-oxide-semiconductor M10, grid connect the grid of the 11st metal-oxide-semiconductor M11, and drain electrode connects load transient
One end input of response enhancing circuit.
The source electrode earth level of 11st metal-oxide-semiconductor M11, grid is connected with drain electrode is followed by the drain electrode of sampling pipe MS.
The drain electrode of one termination power tube MP of the load, other end earth level.
The present invention operation principle be：When load current increases, sample rate current increase, load transient response enhancing circuit
The the first output voltage VG produced reduces so that the electric current increase that power tube MP is produced, carrys out the change of responsive load；When load electricity
When stream reduces, sample rate current reduces, the first output voltage VG increases that load transient response enhancing circuit produces so that power tube
MP is that the electric current that load provides reduces, and carrys out the change of responsive load.
It the above is only the preferred example of the present invention, do not form any limitation of the invention, it is clear that the present invention's
Under design, different change and improvement can be carried out to its circuit, but these the present invention protection row.
Claims (9)
1. a kind of load transient response applied to linear voltage regulator strengthens circuit, it is characterised in that including voltage follower list
Member, variable voltage element；Wherein：
The voltage follower unit includes bias current device IBIAS, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor
M3, the 4th metal-oxide-semiconductor M4；
The variable voltage element includes reference current device IREF, sample rate current circuit, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6,
7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9；
Bias current device I in the voltage follower unitBIASA termination supply voltage VIN, the first MOS of another termination
The source electrode of pipe M1；The grid of first metal-oxide-semiconductor M1 meets bias voltage Vref, drain and connect the drain electrode of the 3rd metal-oxide-semiconductor M3；Second metal-oxide-semiconductor M2
Source electrode connect with the source electrode of the first metal-oxide-semiconductor M1, the drain electrode of the second metal-oxide-semiconductor M2 connect with its grid after with the 4th metal-oxide-semiconductor M4's
Drain electrode is connected；The grid of 3rd metal-oxide-semiconductor M3 drains with it connect after be connected with the grid of the 4th metal-oxide-semiconductor M4, the 3rd metal-oxide-semiconductor M3 and
The source electrode earth level of 4th metal-oxide-semiconductor M4；
After the source electrode of the 5th metal-oxide-semiconductor M5 and the source electrode of the 6th metal-oxide-semiconductor M6 in the variable voltage element connect, with power supply electricity
Press VINIt is connected, after the grid of the 5th metal-oxide-semiconductor M5 connects with drain electrode, is connected with the grid of the 6th metal-oxide-semiconductor M6, the 5th metal-oxide-semiconductor M5's
Drain electrode is connected with the output terminal of external sample rate current circuit；The drain electrode of 6th metal-oxide-semiconductor M6 respectively with the grid of the 7th metal-oxide-semiconductor M7 and
Drain electrode connects；The source electrode of 7th metal-oxide-semiconductor M7 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4 and the drain electrode of the second metal-oxide-semiconductor M2 respectively；8th
The drain electrode of metal-oxide-semiconductor M8 meets supply voltage VIN, grid connects the grid of the 7th metal-oxide-semiconductor M7, the source electrode and reference current of the 8th metal-oxide-semiconductor M8
Device IREFOne end connect after be connected with the grid of the 9th metal-oxide-semiconductor M9；Reference current device IREFOther end earth level；9th
The source electrode of metal-oxide-semiconductor M9 meets supply voltage VIN, drain and meet the first output voltage VG。
2. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
The first metal-oxide-semiconductor M1 for stating, the second metal-oxide-semiconductor M2, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 9th metal-oxide-semiconductor M9 using p-type metal-
Oxidc-Semiconductor pipe.
3. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
The 3rd metal-oxide-semiconductor M3 that states, the 4th metal-oxide-semiconductor M4, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8 are using N-type metal-oxide-partly lead
Body pipe.
4. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
State supply voltage VINUsing DC voltage, in the range of 3V-6V.
5. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
State bias voltage VrefUsing DC voltage, in the range of 1.4V-4V.
6. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
It is equal with the breadth length ratio of the second metal-oxide-semiconductor M2 to state the first metal-oxide-semiconductor M1.
7. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
It is equal with the breadth length ratio of the 4th metal-oxide-semiconductor M4 to state the 3rd metal-oxide-semiconductor M3.
8. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
The ratio between breadth length ratio of the 5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 is stated as 8：1.
9. the load transient response according to claim 1 applied to linear voltage regulator strengthens circuit, it is characterised in that institute
It is equal with the breadth length ratio of the 8th metal-oxide-semiconductor M8 to state the 7th metal-oxide-semiconductor M7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710158975.0A CN106896857B (en) | 2017-03-16 | 2017-03-16 | Load transient response applied to linear voltage regulator strengthens circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710158975.0A CN106896857B (en) | 2017-03-16 | 2017-03-16 | Load transient response applied to linear voltage regulator strengthens circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106896857A CN106896857A (en) | 2017-06-27 |
| CN106896857B true CN106896857B (en) | 2018-04-17 |
Family
ID=59192991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710158975.0A Active CN106896857B (en) | 2017-03-16 | 2017-03-16 | Load transient response applied to linear voltage regulator strengthens circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106896857B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108427463B (en) * | 2018-05-30 | 2019-09-27 | 电子科技大学 | A kind of LDO of wide input voltage range high PSRR |
| CN109116905A (en) * | 2018-11-06 | 2019-01-01 | 西安拓尔微电子有限责任公司 | A kind of fast transient response circuit applied to LDO |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122804A (en) * | 2007-09-07 | 2008-02-13 | 北京时代民芯科技有限公司 | Low-voltage-difference voltage-stablizer |
| US20110181258A1 (en) * | 2010-01-22 | 2011-07-28 | Texas Instruments Incorporated | Low-power feedback and method for DC-DC converters and voltage regulators for energy harvesters |
| CN102981543A (en) * | 2012-11-19 | 2013-03-20 | 西安三馀半导体有限公司 | Drive circuit of ultralow-power-consumption linear voltage stabilizer |
| CN104679086A (en) * | 2015-03-23 | 2015-06-03 | 桂林电子科技大学 | Quick transient response CMOS (Complementary Metal Oxide Semiconductor) low-dropout regulator |
| CN105116955A (en) * | 2015-10-09 | 2015-12-02 | 东南大学 | Transient enhancement circuit applied to full-integration LDO |
-
2017
- 2017-03-16 CN CN201710158975.0A patent/CN106896857B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122804A (en) * | 2007-09-07 | 2008-02-13 | 北京时代民芯科技有限公司 | Low-voltage-difference voltage-stablizer |
| US20110181258A1 (en) * | 2010-01-22 | 2011-07-28 | Texas Instruments Incorporated | Low-power feedback and method for DC-DC converters and voltage regulators for energy harvesters |
| CN102981543A (en) * | 2012-11-19 | 2013-03-20 | 西安三馀半导体有限公司 | Drive circuit of ultralow-power-consumption linear voltage stabilizer |
| CN104679086A (en) * | 2015-03-23 | 2015-06-03 | 桂林电子科技大学 | Quick transient response CMOS (Complementary Metal Oxide Semiconductor) low-dropout regulator |
| CN105116955A (en) * | 2015-10-09 | 2015-12-02 | 东南大学 | Transient enhancement circuit applied to full-integration LDO |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106896857A (en) | 2017-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109782838A (en) | A kind of fast transient response LDO regulator circuit based on phase inverter | |
| CN103412602B (en) | Non-capacitive low-dropout linear voltage regulator | |
| CN103399607A (en) | High-PSR (high power supply rejection) low-dropout regulator with slew rate enhancement circuit integrated thereto | |
| CN103383585A (en) | Wide input range and ultra low temperature drift band gap reference voltage source | |
| CN108008180A (en) | A kind of current sampling circuit of Switching Power Supply | |
| CN103389766A (en) | Sub-threshold non-bandgap reference voltage source | |
| CN106896857B (en) | Load transient response applied to linear voltage regulator strengthens circuit | |
| CN108594924A (en) | A kind of band-gap reference voltage circuit of super low-power consumption whole CMOS subthreshold work | |
| CN107402594A (en) | Realize the low-power consumption low pressure difference linear voltage regulator of high power supply voltage transformation | |
| CN104950976A (en) | Voltage stabilizing circuit based on slew rate increasing | |
| CN208188718U (en) | Quick response LDO circuit based on cascade voltage overturning follower configuration | |
| CN103472881A (en) | Ultralow-power consumption, high-performance and low-dropout linear voltage regulator | |
| CN112732000A (en) | Novel transient response enhanced LDO | |
| CN202817742U (en) | Overcurrent protection circuit | |
| CN113377144A (en) | Linear voltage regulator circuit without overshoot voltage at output end | |
| CN105807831A (en) | Linear voltage regulator and linear voltage stabilizing system preventing overshoot | |
| CN103760942B (en) | Be applicable to the transient state intensifier circuit of low pressure difference linear voltage regulator | |
| CN208781102U (en) | A kind of low pressure difference linear voltage regulator | |
| CN103713679A (en) | LDO (Low Dropout Regulator)circuit based on discrete components | |
| CN108255223A (en) | Ldo circuit | |
| CN115756081A (en) | Voltage stabilizing circuit based on current feedback | |
| CN103558893A (en) | LDO (Low Dropout Regulator) circuit with super low power consumption and high performance | |
| CN203812130U (en) | Transient boosting circuit for low-voltage-difference linear voltage stabilizer and low-voltage-difference linear voltage stabilizer | |
| CN104049667A (en) | High-bandwidth high-PSRR low-pressure-drop linear voltage regulator | |
| CN203982245U (en) | The high PSRR low-voltage-drop linear voltage regulator of a kind of high bandwidth |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |