CN106896857A - It is applied to the load transient response enhancing circuit of linear voltage regulator - Google Patents
It is applied to the load transient response enhancing circuit of linear voltage regulator Download PDFInfo
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
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Abstract
Strengthen circuit the invention discloses a kind of load transient response for being applied to linear voltage regulator, mainly solve the problems, such as that linear voltage regulator load transient response is not fast enough.Load transient response enhancing circuit is made up of voltage follower unit and variable reference voltage unit.The first output voltage and the negatively correlated relation of load current in variable reference voltage unit, with the power tube of this linear adjustment voltage-stablizer, reach the purpose of enhancing transient response.
Description
Technical field
The invention belongs to physical technique field, the one kind further related in electronic circuit technology field is applied to linearly
The load transient response enhancing circuit of voltage-stablizer.The present invention can be linear steady for improving as the pith of linear voltage regulator
The load transient response of depressor.
Background technology
With the development of integrated circuit and electronic technology, substantial amounts of portable set has become indispensable during people live
Product, wherein linear voltage regulator due to its low cost, low noise and high-precision advantage and be widely adopted.Load transient
Response is an important indicator of linear voltage regulator, therefore, it is necessary to study the load transient response enhancing electricity of linear voltage regulator
Road.
STMicw Electronics researches and develops patented technology " the LDO REGULATOR WITH that Co., Ltd (Shenzhen) possesses at it
IMPROVED LOAD TRANSIENT PERFORMANCE FOR INTERNAL POWER SUPPLY " (Authorization Notice No. US
A kind of circuit for improving linear voltage regulator load regulation is disclosed in 9,454,166B2).The circuit comprising error amplifier,
Feedback resistance, power tube and load transient response enhancing circuit.When load transients change, loop can be very for the circuit realiration
Fast response.But, the deficiency that the patented technology is still present is：Due to the circuit requirement some resistance, metal-oxide-semiconductor complete
Cause, it is actual difficult to realize in the fabrication process due to the deviation of manufacturing process；Meanwhile, circuit need to realize the transfer of voltage with
The change of output voltage is sensed, in this course, it is necessary to by the charging of electric capacity, this can cause the load wink of linear voltage regulator
State response is slower.
Meeting paper " A Capacitor-Free, the Fast Transient that Xiao Tang, Lenian He are delivered at it
Response CMOS Low-Dropout Regulator with Multiple-Loop Control”(ASIC(ASICON),
2011IEEE 9th International Conference) in propose a kind of increasing of linear voltage regulator load transient response
Forceful electric power road.The circuit includes error amplifier, feedback resistance, power tube, CE (comparator enhacement) modules and DE
(differentiator enhacement) module.The method that the paper is proposed can improve the load wink of linear voltage regulator
State is responded.But, the deficiency that the technology is still present is：Because linear voltage regulator has three loops, in the stability of circuit
Aspect can there is certain risk, it is necessary to very with caution, meanwhile, two newly-increased loops also increase the chip area of chip.
The content of the invention
Linear voltage regulator load transient response it is an object of the invention to be directed to above-mentioned prior art is not fast enough and adopts
After load transient response circuit, the easy instable problem of system loop, proposition is a kind of to be applied to the negative of linear voltage regulator
Transient response enhancing circuit is carried, its application in side circuit is improved.
To achieve these goals, the present invention proposes what is be made up of voltage follower unit and variable reference voltage unit
Load transient response strengthens circuit.
Described voltage follower unit includes bias current device IBIAS, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd
Metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4；
Described variable reference voltage unit includes reference current device IREF, sample rate current circuit, the 5th metal-oxide-semiconductor M5, the 6th
Metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9；
Bias current device I in described voltage follower unitBIASA termination supply voltage VIN, another termination first
The source electrode of metal-oxide-semiconductor M1；The grid of the first metal-oxide-semiconductor M1 meets bias voltage Vref, drain and connect the drain electrode of the 3rd metal-oxide-semiconductor M3；2nd MOS
The source electrode of pipe M2 connects with the source electrode of the first metal-oxide-semiconductor M1, the drain electrode of the second metal-oxide-semiconductor M2 connect with its grid after with the 4th metal-oxide-semiconductor
The drain electrode of M4 is connected；The grid of the 3rd metal-oxide-semiconductor M3 drains after connecting with it and is connected with the grid of the 4th metal-oxide-semiconductor M4, the 3rd metal-oxide-semiconductor
The source ground level of M3 and the 4th metal-oxide-semiconductor M4；
After the source electrode of the 5th metal-oxide-semiconductor M5 and the source electrode of the 6th metal-oxide-semiconductor M6 in described variable voltage circuit unit connect,
It is connected with supply voltage VIN, after the grid of the 5th metal-oxide-semiconductor M5 connects with drain electrode, the grid with the 6th metal-oxide-semiconductor M6 is connected, the 5th
The drain electrode of metal-oxide-semiconductor M5 connects the output end of sample rate current circuit；The drain electrode of the 6th metal-oxide-semiconductor M6 and the grid of the 7th metal-oxide-semiconductor M7 and leakage
Pole connects；The source electrode of the 7th metal-oxide-semiconductor M7 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4 and the drain electrode of the second metal-oxide-semiconductor M2；8th metal-oxide-semiconductor
The drain electrode of M8 meets supply voltage VIN, grid connects the grid of the 7th metal-oxide-semiconductor M7, source electrode and reference current IREFOne end connect after with
The grid of the 9th metal-oxide-semiconductor M9 is connected；Reference current device IREFOther end earth level；The source electrode of the 9th metal-oxide-semiconductor M9 connects power supply electricity
Pressure VIN, drain and meet the first output voltage VG。
The present invention has advantages below compared with prior art：
1st, the load transient response circuit proposed in circuit of the present invention, by the 5th in variable reference voltage unit
The drain electrode of metal-oxide-semiconductor M5 is connected with the output end of sample rate current circuit, and the 8th metal-oxide-semiconductor source electrode is connected with the grid of the 9th metal-oxide-semiconductor M9,
The drain electrode of the 9th metal-oxide-semiconductor is connected with the first output voltage, realizes the first output voltage and changes with the sample rate current as load
Negative correlation, with the grid end voltage of this linear adjustment voltage-stablizer power tube, reaches the purpose of enhancing transient response, overcomes existing skill
The slower problem of load transient response in art so that the present invention has load transient response advantage faster.
2nd, because the drain electrode of the second metal-oxide-semiconductor M2 in voltage follower unit of the invention connects with its grid, the 3rd
The grid of metal-oxide-semiconductor M3 drains with it and connects, and the grid of the 5th metal-oxide-semiconductor M5 in variable voltage circuit unit connects with drain electrode, the
The grid of seven metal-oxide-semiconductor M7 connects with drain electrode so that the limit caused by load transient response enhancing circuit is respectively positioned on high frequency treatment, gram
The problem of the caused linear voltage regulator stability of prior art is taken so that the present invention has negative in enhancing linear voltage regulator
While carrying transient response, the advantage of linear voltage regulator stability is ensure that.
Brief description of the drawings
Fig. 1 is electrical schematic diagram of the invention；
Fig. 2 is the circuit theory diagrams of the linear voltage regulator of use load transient enhancing circuit proposed by the present invention.
Specific embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
Reference picture 1, is described as follows to circuit structure of the invention.
The present invention includes voltage follower unit, variable voltage element.
Voltage follower unit includes bias current device IBIAS, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2,
3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4.
Bias current device I in voltage follower unitBIASA termination supply voltage VIN, the supply voltage VINUsing
DC voltage, in the range from 3V-6V, the source electrode of the first metal-oxide-semiconductor of another termination M1；The grid of the first metal-oxide-semiconductor M1 connects reference voltage
Vref, the bias voltage VrefUsing DC voltage, in the range from 1.4V-4V, drain electrode connects the drain electrode of the 3rd metal-oxide-semiconductor M3；Second
The source electrode of metal-oxide-semiconductor M2 connects with the source electrode of the first metal-oxide-semiconductor M1, the drain electrode of the second metal-oxide-semiconductor M2 connect with its grid after with the 4th MOS
The drain electrode of pipe M4 is connected；The grid of the 3rd metal-oxide-semiconductor M3 drains after connecting with it and is connected with the grid of the 4th metal-oxide-semiconductor M4, the 3rd MOS
The source ground level of pipe M3 and the 4th metal-oxide-semiconductor M4.
First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 use p-type Metal-oxide-semicondutor pipe, the 3rd metal-oxide-semiconductor M3, the 4th
Metal-oxide-semiconductor M4 uses N-type Metal-oxide-semicondutor pipe.
Described the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 9th metal-oxide-semiconductor M9 are adopted
With p-type Metal-oxide-semicondutor pipe.
Described the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8 uses N-type metal-oxygen
Compound-transistor.
First metal-oxide-semiconductor M1 is equal with the breadth length ratio of the second metal-oxide-semiconductor M2, the breadth length ratio of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4
It is equal.7th metal-oxide-semiconductor M7 is equal with the breadth length ratio of the 8th metal-oxide-semiconductor M8.
The ratio between breadth length ratio of 5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 is 8：1.
The operation principle of the voltage follower in the present invention is：
If grid end voltage of the grid end voltage of the first metal-oxide-semiconductor M1 less than the second metal-oxide-semiconductor M2, flows through the second metal-oxide-semiconductor M2
Electric current be less than and flow through the electric current of the first metal-oxide-semiconductor M1, because the electric current for flowing through the 3rd metal-oxide-semiconductor is equal to the electricity for flowing through the first metal-oxide-semiconductor
Stream, the electric current of the metal-oxide-semiconductor M3 of current mirror the 3rd of the 4th metal-oxide-semiconductor M4, therefore the electric current of the second metal-oxide-semiconductor M2 is flowed through less than flowing through the
The electric current of four metal-oxide-semiconductor M4, so, the grid voltage reduction of the second metal-oxide-semiconductor M2 finally, realizes the grid voltage of the second metal-oxide-semiconductor M2
Equal to the grid voltage of the first metal-oxide-semiconductor M1.
By the constantly regulate of voltage follower internal circuit so that the grid voltage of the second metal-oxide-semiconductor M2 is equal to a MOS
The grid voltage of pipe M1, realizes the function of voltage follow.
Variable voltage element includes reference current device IREF, sample rate current circuit, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the
Seven metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9.
After the source electrode of the 5th metal-oxide-semiconductor M5 and the source electrode of the 6th metal-oxide-semiconductor M6 in variable voltage circuit unit connect, with power supply
Voltage VINIt is connected, after the grid of the 5th metal-oxide-semiconductor M5 connects with drain electrode, the grid with the 6th metal-oxide-semiconductor M6 is connected, the 5th metal-oxide-semiconductor M5
Drain electrode connect the output end of sample rate current circuit；The drain electrode of the 6th metal-oxide-semiconductor M6 connects with the grid of the 7th metal-oxide-semiconductor M7 with drain electrode；
The source electrode of the 7th metal-oxide-semiconductor M7 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4 and the drain electrode of the second metal-oxide-semiconductor M2；The drain electrode of the 8th metal-oxide-semiconductor M8
Meet supply voltage VIN, grid connects the grid of the 7th metal-oxide-semiconductor M7, source electrode and reference current IREFOne end connect after with the 9th metal-oxide-semiconductor
The grid of M9 is connected；Reference current device IREFOther end earth level；The source electrode of the 9th metal-oxide-semiconductor M9 meets supply voltage VIN, drain electrode
Meet the first output voltage VG。
The operation principle of the variable voltage circuit in the present invention is：
Sample rate current circuit sampling load current, while the electric current flows through the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 is with certain
The metal-oxide-semiconductor M5 of scaled mirror the 5th electric current, the electric current of the 7th metal-oxide-semiconductor M7 is equal to the electric current of the 6th metal-oxide-semiconductor M6, because the 7th
The source voltage of metal-oxide-semiconductor M7 is certain value Vref, then when load current change is big, the grid voltage increase of the 7th metal-oxide-semiconductor M7, and
Because the electric current of the 8th metal-oxide-semiconductor M8 is certain value IREF, then the source voltage increase of the 8th metal-oxide-semiconductor M8, and then cause the 9th MOS
The drain voltage VG of pipe M9 reduces, and the power tube of linear adjustment voltage-stablizer carrys out the change of responsive load；When load current becomes hour,
The grid voltage of the 7th metal-oxide-semiconductor M7 reduces, and because the electric current of the 8th metal-oxide-semiconductor M8 is certain value IREF, then the 8th metal-oxide-semiconductor M8
Source voltage reduces, and then causes the drain voltage VG increases of the 9th metal-oxide-semiconductor M9.Therefore, variable voltage circuit realiration one
When becoming big with the first output voltage VG of the negatively correlated change of load current, i.e. load current, the first output voltage VG reduces；It is negative
Carry electric current and become hour, the first output voltage VG increases.
Fig. 2 gives load transient response of the present invention enhancing circuit and applies an application example in linear voltage regulator.
Reference picture 2, the present invention includes error amplifier EA, load transient response enhancing circuit, power tube MP, sampling pipe
MS, feedback resistance R1, R2, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11 load ZL。
One end input of error amplifier EA meets reference voltage VREF, and the other end is input into reversed feedthrough voltage VFB, output termination
The grid of power tube MP.
One end input of load transient response enhancing circuit meets bias voltage Vref, the other end input connect sample rate current circuit
Output, the grid of output termination power tube MP.
The source electrode of power tube MP meets supply voltage VIN, and grid connects the grid of sampling pipe MS, and drain electrode connects the one of feedback resistance R1
End.
The source electrode of sampling pipe MS meets supply voltage VIN, and drain electrode connects the drain electrode of the 11st metal-oxide-semiconductor M11.
The other end of feedback resistance R1 connects one end of feedback resistance R2, the other end earth level of feedback resistance R2.
The source ground level of the tenth metal-oxide-semiconductor M10, grid connects the grid of the 11st metal-oxide-semiconductor M11, and drain electrode connects load transient
One end input of response enhancing circuit.
The source ground level of the 11st metal-oxide-semiconductor M11, grid is connected with drain electrode and is followed by the drain electrode of sampling pipe MS.
The drain electrode of one termination power tube MP of described load, other end earth level.
Operation principle of the invention is：When load current increases, sample rate current increase, load transient response enhancing circuit
The the first output voltage VG for producing reduces so that the electric current increase that power tube MP is produced, and carrys out the change of responsive load；When load electricity
When stream reduces, sample rate current reduces, the first output voltage VG increases that load transient response enhancing circuit is produced so that power tube
MP reduces for the electric current that load is provided, and carrys out the change of responsive load.
The above is only a preferred example of the invention, do not constitute any limitation of the invention, it is clear that of the invention
Under design, different changes can be carried out to its circuit and is improved, but these are in the row of protection of the invention.
Claims (9)
1. a kind of load transient response enhancing circuit for being applied to linear voltage regulator, including voltage follower unit, variable voltage
Unit；Wherein：
Described voltage follower unit includes bias current device IBIAS, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor
M3, the 4th metal-oxide-semiconductor M4；
Described variable reference voltage unit includes reference current device IREF, sample rate current circuit, the 5th metal-oxide-semiconductor M5, the 6th MOS
Pipe M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9；
Bias current device I in described voltage follower unitBIASA termination supply voltage VIN, the first MOS of another termination
The source electrode of pipe M1；The grid of the first metal-oxide-semiconductor M1 meets bias voltage Vref, drain and connect the drain electrode of the 3rd metal-oxide-semiconductor M3；Second metal-oxide-semiconductor M2
Source electrode connect with the source electrode of the first metal-oxide-semiconductor M1, the drain electrode of the second metal-oxide-semiconductor M2 connect with its grid after with the 4th metal-oxide-semiconductor M4's
Drain electrode is connected；The grid of the 3rd metal-oxide-semiconductor M3 drains after connecting with it and is connected with the grid of the 4th metal-oxide-semiconductor M4, the 3rd metal-oxide-semiconductor M3 and
The source ground level of the 4th metal-oxide-semiconductor M4；
After the source electrode of the 5th metal-oxide-semiconductor M5 and the source electrode of the 6th metal-oxide-semiconductor M6 in described variable voltage circuit unit connect, with electricity
Source voltage VINIt is connected, after the grid of the 5th metal-oxide-semiconductor M5 connects with drain electrode, the grid with the 6th metal-oxide-semiconductor M6 is connected, the 5th metal-oxide-semiconductor
The drain electrode of M5 is connected with the output end of external sample rate current circuit；6th metal-oxide-semiconductor M6 drain electrode respectively with the grid of the 7th metal-oxide-semiconductor M7
Pole and drain electrode connect；The source electrode of the 7th metal-oxide-semiconductor M7 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4 and the drain electrode of the second metal-oxide-semiconductor M2 respectively；
The drain electrode of the 8th metal-oxide-semiconductor M8 meets supply voltage VIN, grid connects the grid of the 7th metal-oxide-semiconductor M7, source electrode and reference current IREFOne end
Grid after connecting with the 9th metal-oxide-semiconductor M9 is connected；Reference current device IREFOther end earth level；The source electrode of the 9th metal-oxide-semiconductor M9
Meet supply voltage VIN, drain and meet the first output voltage VG。
2. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 9th metal-oxide-semiconductor M9 for stating using p-type metal-
Oxidc-Semiconductor pipe.
3. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8 for stating are using N-type metal-oxide-partly lead
Body pipe.
4. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
State supply voltage VINUsing DC voltage, in the range from 3V-6V.
5. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
State bias voltage VrefUsing DC voltage, in the range from 1.4V-4V.
6. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
State the first metal-oxide-semiconductor M1 equal with the breadth length ratio of the second metal-oxide-semiconductor M2.
7. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
State the 3rd metal-oxide-semiconductor M3 equal with the breadth length ratio of the 4th metal-oxide-semiconductor M4.
8. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
It is 8 to state the ratio between breadth length ratio of the 5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6：1.
9. the load transient response for being applied to linear voltage regulator according to claim 1 strengthens circuit, it is characterised in that institute
State the 7th metal-oxide-semiconductor M7 equal with the breadth length ratio of the 8th metal-oxide-semiconductor M8.
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| CN108427463A (en) * | 2018-05-30 | 2018-08-21 | 电子科技大学 | A kind of LDO of wide input voltage range high PSRR |
| CN109116905A (en) * | 2018-11-06 | 2019-01-01 | 西安拓尔微电子有限责任公司 | A kind of fast transient response circuit applied to LDO |
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| CN104679086A (en) * | 2015-03-23 | 2015-06-03 | 桂林电子科技大学 | Quick transient response CMOS (Complementary Metal Oxide Semiconductor) low-dropout regulator |
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| CN101122804A (en) * | 2007-09-07 | 2008-02-13 | 北京时代民芯科技有限公司 | Low-voltage-difference voltage-stablizer |
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| CN109116905A (en) * | 2018-11-06 | 2019-01-01 | 西安拓尔微电子有限责任公司 | A kind of fast transient response circuit applied to LDO |
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| CN106896857B (en) | 2018-04-17 |
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