CN106887470A - Ga2O3Schottky diode device structure and preparation method thereof - Google Patents
Ga2O3Schottky diode device structure and preparation method thereof Download PDFInfo
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- CN106887470A CN106887470A CN201710050140.3A CN201710050140A CN106887470A CN 106887470 A CN106887470 A CN 106887470A CN 201710050140 A CN201710050140 A CN 201710050140A CN 106887470 A CN106887470 A CN 106887470A
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- 238000002360 preparation method Methods 0.000 title description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052681 coesite Inorganic materials 0.000 claims description 18
- 229910052906 cristobalite Inorganic materials 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 229910052682 stishovite Inorganic materials 0.000 claims description 18
- 229910052905 tridymite Inorganic materials 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 229910001868 water Inorganic materials 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229910004166 TaN Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910015844 BCl3 Inorganic materials 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of Ga2O3Schottky diode device structure and manufacture method, mainly solve the problems, such as that low and field plate structure presence the parasitic capacitance of existing schottky diode device breakdown reverse voltage is big.Its from bottom to top, including cathode electrode, doped n-type Ga2O3Substrate, low-doped n-type Ga2O3Epitaxial layer, anode electrode；The part that anode is contacted with epitaxial layer forms Schottky contacts, and negative electrode forms Ohmic contact, low-doped n-type Ga with substrate2O3Multiple grooves are intervally distributed with epitaxial layer, the spacing of groove increases successively in 0.3 μm~0.5 μ m, and first groove is positioned at the underface of anode edge, last groove and first distance of groove are 10 μm~15 μm, and inside grooves epitaxial growth has AlGaO layers of Al components more than 20%.The present invention improves breakdown reverse voltage, reduces parasitic capacitance, and keeps forward characteristic constant, can be used for high speed integrated circuit and microwave technology.
Description
Technical field
The invention belongs to microelectronics technology, and in particular to a kind of Schottky diode, for high speed integrated circuit and
Microwave technology.
Background technology
Schottky diode is to form Schottky barrier this principle manufacture by the contact between metal and semiconductor,
Schottky barrier plays a part of rectification.Compared with pn-junction diode, Schottky diode has cut-in voltage lower, switch speed
Faster advantage is spent, therefore is widely used in the fields such as high speed integrated circuit, microwave technology.But, due to Schottky diode
Electric field be concentrated mainly on the fringe region of Schottky contacts, when the electric field in the region reaches the disruptive field intensity of material, device
Easily puncture in the region, and the electric field in remaining region is less than the disruptive field intensity of material.Therefore, in order to improve Schottky two
The breakdown voltage of pole pipe, must just reduce the electric field of Schottky contacts fringe region.
The method of Schottky diode breakdown voltage is improved at present mainly including field plate structure etc. is added.Field plate structure be
The metallic perimeter of Schottky contacts, deposits one layer of SiO2, then in SiO2A part of field plate metal is deposited on layer, is allowed to and pars intermedia
The metal for dividing is coupled together.This layer of SiO2Enable to concentrate on some electrical power line at easy breakdown region when diode is reverse-biased
Polysilicon and Metal field plate are terminated at from semiconductor surface, so as to effectively reduce schottky metal edge and semi-conducting material
The electric field of contact area.But because field plate structure introduces dielectric layer, the enhancing of ghost effect will certainly be caused, cause parasitic electricity
Hold increase.
The content of the invention
The present invention proposes a kind of Ga for the deficiency of above-mentioned prior art2O3Schottky diode device structure and its making
Method, to avoid the generation of ghost effect while breakdown reverse voltage is improved, reduces parasitic capacitance.
One, know-whies
Ga2O3As a kind of oxide semiconductor material, have broad application prospects.Ga2O3Semi-conducting material forbidden band is wide
Degree is big, about 4.8eV~4.9eV, and it belongs to monoclinic crystal, and the lattice structure of epitaxial film is perfect, uniform, with excellent light
The physicochemical property of performance and stabilization is learned, is the ideal material that high performance power device is developed, therefore in high-power electronic device
Field has certain application prospect.Recent domestic researcher have made extensive and intensive studies to it, and achieves
Fruitful achievement in research.The present invention is with Ga2O3For material makes Schottky diode, the high-power performance of boost device.
Additionally, device of the invention is in n-The Ga of type2O3The multiple grooves being spaced apart of layer surface etching, and in groove
Portion carries out the growth of AlGaO so that depletion region increase when reverse-biased, peak value electric field reduces, and is avoided that ghost effect.
Two, technical schemes
According to above-mentioned principle, Ga of the present invention2O3Schottky diode device structure, from bottom to top including doped n-type
Ga2O3Substrate and low-doped n-type Ga2O3Epitaxial layer, is deposited with anode electrode on the epitaxial layer, the lower surface of highly doped substrate forms sediment
Product has cathode electrode, and the part that anode is contacted with epitaxial layer forms Schottky contacts, and negative electrode forms Ohmic contact with substrate, and it is special
Levy and be：
The low-doped n-type Ga2O3Schottky contact area on epitaxial layer is respectively provided on two sides with M groove, and M >=4 are recessed
The spacing of groove increases successively in 0.3 μm~0.5 μ m, and first groove, positioned at the underface of anode edge, m-th is recessed
Groove and first distance of groove are that growth has AlGaO of the Al components more than 20% in 10 μm~15 μm, groove.
Preferably, the doped n-type Ga2O3The electron concentration of substrate is 1017cm-3~1018cm-3, thickness is more than 1 μ
m；The low-doped n-type Ga2O3The carrier concentration of epitaxial layer is 1014cm-3~1016cm-3, thickness is more than 1 μm.
Preferably, the anode electrode includes one or more in Pt, Ni, Au, Pd, Mo, W and TaN；The negative electrode
Electrode includes one or more in Ti, Al, In, Au.
Preferably, the depth of each groove is 30nm~50nm, width is 2 μm~3 μm.
According to above-mentioned principle, the present invention makes Ga2O3The method of schottky diode device, comprises the following steps：
1) to the Ga in substrate Epitaxial growth2O3Sample carry out organic washing, be then placed in HF:H2O=1:1
Corrosion 30s~60s is carried out in solution, is finally cleaned and is dried up with high pure nitrogen with the deionized water of flowing；
2) cleaned sample face down is put into ICP etching reaction chambers and is performed etching；
3) the sample face down after etching is put into evaporated metal Ti/Au in electron beam evaporation platform, wherein metal Ti is thick
It is 20nm~50nm to spend, and metal Au thickness is 100nm~200nm, and 550 DEG C, the fast speed heat of 60s are finally carried out in nitrogen environment
Annealing, forms cathode ohmic contact electrode；
4) sample that will prepare Ohmic contact is put into the SiO of deposit 50nm~60nm thickness in PECVD device2Film；
5) to deposited SiO2The sample front of film carries out photoetching, forms recess etch area, is then placed in corruption in BOE solution
Erosion 1min~1.5min, the SiO in removal recess etch area2；
6) etched area SiO will be removed2Sample be put into ICP etching reaction chambers, etch away below recess etch area
Ga2O3, the Schottky contact area both sides on epitaxial layer form M groove respectively, M >=4, the spacing of groove 0.3 μm~
Increase successively in 0.5 μ m, and first groove is located at the underface of anode edge, m-th groove and first groove
Distance is 10 μm~15 μm, and the depth of each groove is 30nm~50nm, and width is 2 μm~3 μm；
7) sample that will have been etched is cleaned, and removes the photoresist and various impurity on surface, is then placed in pulse and is swashed
In light deposition reative cell, AlGaO of the deposit Al components more than 20%, the thickness of deposit is consistent with depth of groove；
8) sample that will deposit AlGaO is put into BOE solution, corrodes 3min~4min, removes remaining SiO2Mask
And SiO2AlGaO above；
9) carry out photoetching to the sample after corrosion, form anode electrode regions, to place into and evaporate Pt/ in electron beam evaporation platform
Ti/Au is simultaneously peeled off, and forms metal anode electrode, and the thickness of Pt metal is 10nm~20nm, and the thickness of metal Ti is 20nm
The thickness of~50nm, metal Au is 100nm~200nm.
, by etched recesses and inside growing AlGaO, when Schottky diode is reverse-biased, these regions can be with for the present invention
Tolerance electric-field intensity higher, is difficult it breakdown, improves the breakdown voltage of device；Simultaneously because the groove structure does not have
To form dielectric layer, it is to avoid the generation of ghost effect；Additionally due to the region immediately below schottky metal is not carried out
The growth of AlGaO so that in forward conduction, electric current can flow through semi-conducting material to Schottky diode from this subregion,
Maintain the forward characteristic of diode.
Brief description of the drawings
Fig. 1 is the cross-sectional view of device of the present invention；
Fig. 2 is the Making programme schematic diagram of device of the present invention.
Specific embodiment
The present invention is described in detail referring to the drawings.
Reference picture 1, diode component of the invention, including doped n-type Ga2O3Substrate 1, low-doped n-type Ga2O3Extension
Layer 2, cathode electrode 3, groove and AlGaO layers 4 and anode electrode 5 of inside grooves epitaxial growth.Low-doped n-type Ga2O3Epitaxial layer
Positioned at doped n-type Ga2O3Substrate, the carrier concentration of substrate is 1017cm-3~1018cm-3, thickness be more than 1 μm, extension
The carrier concentration of layer is 1014cm-3~1016cm-3, thickness is more than 1 μm；Cathode electrode is located at doped n-type Ga2O3Epitaxial layer
Lower surface, it forms Ohmic contact with substrate, and metal used by the cathode electrode includes the one kind or many in Ti, Al, In, Au
Kind；Anode electrode is deposited with epitaxial layer, the part that it is contacted with epitaxial layer forms Schottky contacts, gold used by the anode electrode
Category includes one or more in Pt, Ni, Au, Pd, Mo, W and TaN；The both sides of the Schottky contact area are intervally distributed with M
, positioned at the underface of anode edge, m-th groove and first distance of groove are 10 μm for groove, M >=4, and first groove
~15 μm, the depth of each groove is 30nm~50nm, and width is 2 μm~3 μm, and the spacing of groove is in 0.3 μm~0.5 μ m
Inside increase successively, for example, when the spacing of groove increases successively by 0.3 μm, for a groove for taking M=4, its first recessed
Groove and second groove spacing are 0.5 μm, and second groove and the 3rd groove spacing are 0.8 μm, the 3rd groove and the 4th
Individual groove spacing is 1.1 μm；Growth has AlGaO in groove, and its thickness is identical with the depth of groove, the Al components in the AlGaO
More than 20%.
Reference picture 2, the method that the present invention makes Schottky diode, provides following three kinds of embodiments：
Embodiment 1, makes groove number M=4, and depth of groove is 30nm, and width is 2 μm, and groove spacing increases successively by 0.3 μm
Plus Schottky diode.
Step 1, cleaning, such as Fig. 2 (a).
To the Ga in substrate Epitaxial growth2O3Sample carry out organic washing, condition is acetone soln ultrasound 5min,
Ethanol solution ultrasound 5min, is then cleaned with deionized water, and HF is put into afterwards:H2O=1:Corroded in 1 solution, the time
It is 50s, is finally cleaned and dried up with high pure nitrogen with the deionized water of flowing.
Step 2, etching, such as Fig. 2 (b).
Cleaned sample face down is put into ICP etching reaction chambers, substrate lower surface is carried out at slight etching
Manage, process conditions are：Upper electrode power is 100W, and lower electrode power is 10W, and chamber pressure is 30Pa, BCl3Flow be
The flow of 10sccm, Ar gas is 20sccm, and process time is 5min.
Step 3, prepares cathode electrode, such as Fig. 2 (c).
Sample face down after slightly etching is put into evaporated metal Ti/Au, wherein metal Ti in electron beam evaporation platform
Thickness is 20nm, and metal Au thickness is 120nm, and 550 DEG C are finally carried out in nitrogen environment, and the rapid thermal annealing of 60s forms cloudy
Pole Ohm contact electrode.
Step 4, deposits SiO2Mask, such as Fig. 2 (d).
To prepare Ohmic contact sample be put into PECVD device in deposit SiO2Mask, SiH4Flow be 40sccm,
N2The flow of O is 10sccm, and chamber pressure is 2Pa, and radio-frequency power is 40W, deposit 50nm thick SiO2Film.
Step 5, the SiO in removal recess etch area2Mask, such as Fig. 2 (e).
Photoetching is carried out to sample front, recess etch area is formed, is then placed in BOE solution, solution ratio is HF：
NH4F：H2O=1:2:3, corrode 1 minute.
Step 6, etched recesses, 2 (f).
Sample is put into ICP etching reaction chambers, is 100W in upper electrode power, lower electrode power is 20W, reacts chamber pressure
Power is 10Pa, Cl2Flow be 5sccm, under the flow of Ar gas is for the process conditions of 10sccm, etch 30s, etch away groove quarter
Low-doped n-type Ga below erosion area2O3Epitaxial layer, forms depth for 30nm, and width is 2 μm of groove, and groove spacing presses 0.3 μm
Increase successively, first groove is located at the underface of anode edge, and first groove and second groove spacing are 0.5 μm, the
Two grooves and the 3rd groove spacing are 0.8 μm, and the 3rd groove and the 4th groove spacing are 1.1 μm.
Step 7, deposits AlGaO, such as Fig. 2 (g).
The sample that will have been etched carries out organic washing, removes the photoresist and various impurity on surface, is then placed in pulse
It is 1.9J/cm in pulse power density in laser deposition reative cell2, oxygen pressure is 0.01mbar, and underlayer temperature is 610 DEG C, frequency
To deposit AlGaO layers of Al components more than 20% under the process conditions of 3Hz, the thickness of deposit is consistent with depth of groove.
Step 8, corrosion, such as Fig. 2 (h).
The sample that AlGaO will have been deposited is put into BOE solution, corrodes 3min, removes remaining SiO2Mask and SiO2Above
AlGaO.
Step 9, prepares anode electrode, such as Fig. 2 (i).
Photoetching is carried out to sample, anode electrode regions are determined, is then placed in evaporating Pt/Ti/Au simultaneously in electron beam evaporation platform
Peeled off, formed metal anode electrode, the thickness of Pt metal is 10nm, and the thickness of metal Ti is 20nm, the thickness of metal Au
It is 120nm, completes the making of whole device.
Embodiment 2, makes groove number M=5, and depth of groove is 40nm, and width is 2.5 μm, and groove spacing presses 0.4 μm successively
Increased Schottky diode.
Step one, cleaning.
This step it is 1 identical the step of implementing with embodiment 1.
Step 2, etching.
This step it is 2 identical the step of implementing with embodiment 1.
Step 3, prepares cathode electrode.
This step it is 3 identical the step of implementing with embodiment 1.
Step 4, deposits SiO2Mask.
This step it is 4 identical the step of implementing with embodiment 1.
Step 5, the SiO in removal recess etch area2Mask.
This step it is 5 identical the step of implementing with embodiment 1.
Step 6, etched recesses.
Sample is put into ICP etching reaction chambers, is 100W in upper electrode power, lower electrode power is 20W, reacts chamber pressure
Power is 10Pa, Cl2Flow be 5sccm, under the flow of Ar gas is for the process conditions of 10sccm, 45s is carried out to recess etch area
Etching, etch away the low-doped n-type Ga below recess etch area2O3Epitaxial layer, forms depth for 40nm, and width is 2.5 μm
Groove, groove spacing increases successively by 0.4 μm, and first groove is located at the underface of anode edge, first groove and second
Individual groove spacing is 0.5 μm, and second groove and the 3rd groove spacing are 0.9 μm, between the 3rd groove and the 4th groove
Away from being 1.3 μm, the 4th groove and the 5th groove spacing are 1.7 μm.
Step 7, deposits AlGaO.
The sample that will have been etched carries out organic washing, removes the photoresist and various impurity on surface, is then placed in pulse
It is 1.9J/cm in pulse power density in laser deposition reative cell2, oxygen pressure is 0.01mbar, and underlayer temperature is 610 DEG C, frequency
To deposit AlGaO layers of Al components more than 20% under the process conditions of 3Hz, the thickness of deposit is consistent with depth of groove.
Step 8, corrosion.
The sample that AlGaO will have been deposited is put into BOE solution, corrodes 4min, removes remaining SiO2Mask and SiO2Above
AlGaO.
Step 9, prepares anode electrode.
This step it is 9 identical the step of implementing with embodiment 1.
Embodiment 3, makes groove number M=6, and depth of groove is 50nm, and width is 3 μm, and groove spacing increases successively by 0.5 μm
Plus Schottky diode.
Step A, cleaning.
This step it is 1 identical the step of implementing with embodiment 1.
Step B, etching.
This step it is 2 identical the step of implementing with embodiment 1.
Step C, prepares cathode electrode.
This step it is 3 identical the step of implementing with embodiment 1.
Step D, deposits SiO2Mask.
This step it is 4 identical the step of implementing with embodiment 1.
Step E, the SiO in removal recess etch area2Mask.
This step it is 5 identical the step of implementing with embodiment 1.
Step F, etched recesses.
Sample is put into ICP etching reaction chambers, is 100W in upper electrode power, lower electrode power is 20W, reacts chamber pressure
Power is 10Pa, Cl2Flow be 5sccm, under the flow of Ar gas is for the process conditions of 10sccm, etch 60s, etch away groove quarter
Low-doped n-type Ga below erosion area2O3Epitaxial layer, forms depth for 50nm, and width is 3 μm of groove, and groove spacing presses 0.5 μm
Increase successively, first groove is located at the underface of anode edge, and first groove and second groove spacing are 0.5 μm, the
Two grooves and the 3rd groove spacing are 1 μm, and the 3rd groove is 1.5 μm with the 4th groove spacing, the 4th groove and
5th groove spacing is 2 μm, and the 5th groove and the 6th groove spacing are 2.5 μm.
Step G, deposits AlGaO.
The sample that will have been etched carries out organic washing, removes the photoresist and various impurity on surface, is then placed in pulse
It is 1.9J/cm in pulse power density in laser deposition reative cell2, oxygen pressure is 0.01mbar, and underlayer temperature is 610 DEG C, frequency
To deposit AlGaO layers of Al components more than 20% under the process conditions of 3Hz, the thickness of deposit is consistent with depth of groove.
Step H, corrosion.
The sample that AlGaO will have been deposited is put into BOE solution, corrodes 5min, removes remaining SiO2Mask and SiO2Above
AlGaO.
Step I, prepares anode electrode.
This step it is 9 identical the step of implementing with embodiment 1.
Foregoing description is only several preferably instantiations of the invention, but its be not for limiting the present invention, it is any
Those skilled in the art without departing from the spirit and scope of the present invention, may be by the methods and techniques content of the disclosure above
Possible variation and modification are made to technical solution of the present invention, therefore, every content without departing from technical solution of the present invention, foundation
Any simple modification, equivalent variation and modification that technical spirit of the invention is made to above example, belong to skill of the present invention
The protection domain of art scheme.
Claims (10)
1. a kind of Ga2O3Schottky diode device structure, from bottom to top including doped n-type Ga2O3Substrate and low-doped n-type
Ga2O3Epitaxial layer, is deposited with anode electrode on the epitaxial layer, the lower surface of highly doped substrate is deposited with cathode electrode, anode with it is outer
The part for prolonging layer contact forms Schottky contacts, and negative electrode forms Ohmic contact with substrate, it is characterised in that：
The low-doped n-type Ga2O3Schottky contact area on epitaxial layer is respectively provided on two sides with M groove, M >=4, groove
Spacing increases successively in 0.3 μm~0.5 μ m, and first groove is located at the underface of anode edge, m-th groove with
First distance of groove is that growth has AlGaO of the Al components more than 20% in 10 μm~15 μm, groove.
2. the structure according to claims 1, it is characterised in that：
Doped n-type Ga2O3The carrier concentration of substrate is 1017cm-3~1018cm-3, thickness is more than 1 μm；
Low-doped n-type Ga2O3The carrier concentration of epitaxial layer is 1014cm-3~1016cm-3, thickness is more than 1 μm.
3. the structure according to claims 1, it is characterised in that：
Anode electrode includes one or more in Pt, Ni, Au, Pd, Mo, W and TaN；
Cathode electrode includes one or more in Ti, Al, In, Au.
4. the structure according to claims 1, it is characterised in that：The depth of each groove is 30nm~50nm, and width is 2
μm~3 μm.
5. it is a kind of to make Ga2O3The method of schottky diode device, comprises the following steps：
1) to the Ga in substrate Epitaxial growth2O3Sample carry out organic washing, be then placed in HF:H2O=1:1 solution
In carry out corrosion 30s~60s, finally with flowing deionized water clean and dried up with high pure nitrogen；
2) cleaned sample face down is put into ICP etching reaction chambers and is performed etching；
3) the sample face down after etching is put into evaporated metal Ti/Au in electron beam evaporation platform, wherein metal Ti thickness is
20nm~50nm, metal Au thickness are 100nm~200nm, and 550 DEG C are finally carried out in nitrogen environment, and the fast speed heat of 60s is moved back
Fire, forms cathode ohmic contact electrode；
4) sample that will prepare Ohmic contact is put into the SiO of deposit 50nm~60nm thickness in PECVD device2Film；
5) to deposited SiO2The sample front of film carries out photoetching, forms recess etch area, is then placed in corroding in BOE solution
1min~1.5min, the SiO in removal recess etch area2；
6) etched area SiO will be removed2Sample be put into ICP etching reaction chambers, etch away the Ga below recess etch area2O3,
Schottky contact area both sides on epitaxial layer form M groove respectively, M >=4, and the spacing of groove is in 0.3 μm~0.5 μ m
Inside increase successively, and first groove, positioned at the underface of anode edge, m-th groove and first distance of groove are 10 μm
~15 μm, the depth of each groove is 30nm~50nm, and width is 2 μm~3 μm；
7) sample that will have been etched is cleaned, and removes the photoresist and various impurity on surface, is then placed in pulse laser and is sunk
In product reative cell, AlGaO of the deposit Al components more than 20%, the thickness of deposit is consistent with depth of groove；
8) sample that will deposit AlGaO is put into BOE solution, corrodes 3min~4min, removes remaining SiO2Mask and SiO2
AlGaO above；
9) carry out photoetching to the sample after corrosion, form anode electrode regions, to place into and evaporate Pt/Ti/ in electron beam evaporation platform
Au is simultaneously peeled off, and forms metal anode electrode, and the thickness of Pt metal is 10nm~20nm, the thickness of metal Ti for 20nm~
The thickness of 50nm, metal Au is 100nm~200nm.
6. method according to claim 5, wherein step 2) in the process conditions of etching be：Upper electrode power is 100W,
Lower electrode power is 10W, and chamber pressure is 20Pa~30Pa, BCl3Flow be 10sccm, the flow of Ar gas is 20sccm,
Process time is 5min.
7. method according to claim 5, wherein step 4) in deposit SiO2The process conditions of mask are：SiH4Flow
It is 40sccm, N2The flow of O is 10sccm, and chamber pressure is 1Pa~2Pa, and radio-frequency power is 40W~50W.
8. method according to claim 5, wherein step 5) in the process conditions of corrosion be：BOE solution ratios are HF：
NH4F：H2O=1:2:3.
9. method according to claim 5, wherein step 6) in the process conditions of etching be：Upper electrode power is 100W,
Lower electrode power is 20W, and chamber pressure is 5Pa~10Pa, Cl2Flow be 5sccm, the flow of Ar gas is 10sccm, is carved
The erosion time is 30s~60s.
10. method according to claim 5, wherein step 7) in the process conditions of deposit AlGaO be：Pulse power density
It is 1.9J/cm2, oxygen pressure is 0.01mbar, and underlayer temperature is 610 DEG C, and frequency is 3Hz.
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