CN110164962A - Schottky diode of high-breakdown-voltage and preparation method thereof - Google Patents
Schottky diode of high-breakdown-voltage and preparation method thereof Download PDFInfo
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- CN110164962A CN110164962A CN201910430622.0A CN201910430622A CN110164962A CN 110164962 A CN110164962 A CN 110164962A CN 201910430622 A CN201910430622 A CN 201910430622A CN 110164962 A CN110164962 A CN 110164962A
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- 238000002360 preparation method Methods 0.000 title description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 238000004151 rapid thermal annealing Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910004129 HfSiO Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 230000003111 delayed effect Effects 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 12
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000010931 gold Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of Schottky diodes of high-breakdown-voltage, mainly solve that existing schottky diode device breakdown voltage is too low can not to be widely used in the problems in high voltage and high power device.Comprising: Au layers of metal ohmic contact, Ti layers of metal ohmic contact, doped n-type Ga2O3Substrate and low-doped n-type Ga2O3Film, low-doped n-type Ga2O3The slope groove platform being provided on film, the becket that slope groove platform side wall is equipped with, Ni layers and Schottky electrode Au layers of the Schottky electrode that is equipped with of slope groove platform table top, the two sides that Ni layers and Schottky electrode Au layers of Schottky electrode are equipped with dielectric, are equipped with Schottky field plate on Ni layers of Schottky electrode and Au layers of Schottky electrode and dielectric.The invention avoids, with the sharp integrated distribution of electric field strength that the edge of the increase schottky junction of voltage is born, improve breakdown voltage in reversed shutdown, can be used as power device and High-tension Switch Devices.
Description
Technical field
The invention belongs to technical field of microelectronic devices, in particular to a kind of Schottky diode can be used as power device
And High-tension Switch Devices.
Background technique
As semiconductor device application is in more and more technical fields, the low-gap semiconductors diode such as traditional silicon substrate meets with
Lot of challenges is encountered, wherein breakdown voltage is difficult to meet the requirements growing demand, becomes influence and further promotes device
One of key factor of performance.Gallium oxide (Ga2O3) compared with the third generation semiconductor material of representative, have with using SiC, GaN
Broader forbidden bandwidth, disruptive field intensity are equivalent to 20 times of Si or more, and the 2 times or more of SiC and GaN are manufacturing in theory
When the diode component of identical pressure resistance, the conducting resistance of device can be reduced to the 1/3, Ga of the 1/10 of SiC, GaN2O3The Bali of material
The gal figure of merit is 18 times of SiC, 4 times or more of GaN material, therefore Ga2O3Be it is a kind of have excellent performance be suitable for power device and high pressure
The semiconductor material with wide forbidden band of switching device preparation.
In order to improve Ga2O3The performance of schottky diode device must just improve device hitting under reversed off state
Wear voltage, and Ga2O3The breakdown of diode component occurs mainly in the edge termination of the schottky junction of field distribution concentration, therefore
Improve the breakdown voltage of device, it is necessary to make the electric field redistribution at schottky junction, for this purpose, people are by using addition field plate
Method the breakdown voltage of device is improved from 40V to 240V or more, while the on-off ratio of device is still greater than 109.However, logical
Crossing the method that field plate is merely added can only make device obtain tying in two dimension in the electric-field intensity distribution at Schottky contacts edge
Optimization on structure, which limits the distributions of electric field strength, so that breakdown voltage is still not high enough, to limit Ga2O3Xiao Te
Application of the based diode in high voltage and high power device.
Summary of the invention
It is an object of the invention to be directed to above-mentioned existing Ga2O3The deficiency of Schottky diode proposes a kind of high-breakdown-voltage
Schottky diode and preparation method thereof, using by using the oxide layer with high dielectric constant as the medium below field plate
Material, while the metal ring structure that cooperation is prepared on the slope groove with certain tilt angle, so that device is in Schottky
The electric field strength of engagement edge is evenly distributed in three-dimensional structure, avoids the increase schottky junction in reversed shutdown with voltage
The sharp integrated distribution of electric field strength that bears of edge, realize raising to breakdown voltage.
The present invention is implemented as follows:
A kind of Schottky diode of high-breakdown-voltage includes: metal ohmic contact Au layer 1, Ohmic contact from bottom to top
Metal Ti layer 2, doped n-type Ga2O3Substrate 3 and low-doped n-type Ga2O3Film 4, it is characterised in that:
Low-doped n-type Ga2O3Slope groove platform 5 is provided on film, the side wall of slope groove platform 5 is equipped with becket 6, tiltedly
The table top of slope groove platform 5 is equipped with Schottky electrode Ni layer 7 and Schottky electrode Au layer 8；
The two sides of Schottky electrode Ni layer 7 and Schottky electrode Au layer 8 are equipped with dielectric 9；
Schottky field plate 10 is equipped on Schottky electrode Ni layer 7 and Schottky electrode Au layer 8 and dielectric 9.
Further, which is characterized in that the N-shaped Ga2O3Substrate 3, electron concentration 1018cm-3-1019cm-3。
Further, which is characterized in that the low-doped n-type Ga2O3Film 4, carrier concentration 1017cm-3-1018cm-3, thickness is greater than 1 μm.
Further, which is characterized in that the low-doped n-type Ga2O3Slope groove 5 etches shape by plasma etching machine
At etching depth 400-600nm, tilt angle is 40 ° -60 °.
Further, which is characterized in that the dielectric 9, including Si3N4、Al2O3、SiO2、HfO2With one in HfSiO
Kind is a variety of, with a thickness of 100nm-500nm.
To achieve the above object, the method that the present invention makes high-breakdown-voltage Schottky diode, includes the following steps:
1) to doped n-type Ga2O3Substrate carries out standard cleaning；
2) substrate after cleaning is put into the low-doped n-type that extension growth thickness in MOCVD reaction chamber is 600-800nm
Ga2O3Film；
3) substrate delayed outside is put into electron beam evaporation platform, in Ga2O3Substrate back evaporated metal Ti/Au, wherein Ti
With a thickness of 20-50nm, Au is with a thickness of 100-200nm, then in N2The rapid thermal annealing of 550 DEG C, 60s, shape are carried out in environment
At the sample of Ohm contact electrode；
4) sample is put into plasma etching machine equipment, BCl is set3Gas flow be 60sccm, Ar2Gas
Flow is 20sccm, chamber pressure 25mT, radio-frequency power 150W, in low-doped n-type Ga2O3On etch depth and be
400-600nm, the groove that tilt angle is 40 ° -60 °；
5) in low-doped n-type Ga2O3Upper resist coating is lithographically derived the window of deposit Schottky electrode；
6) sample after photoetching is put into electron beam evaporation platform, in low-doped n-type Ga2O3Upper evaporation deposition W metal/
Au, wherein W metal is with a thickness of 20-50nm, and metal Au is with a thickness of 100-200nm；
7) sample for completing deposit is got rid of into the metal on photoresist and photoresist, forms Schottky contact electrode；
8) sample for forming Schottky contact electrode is put into PECVD device, reacting gas source SiH is set4Flow
For 40sccm, N2The flow of O is 10sccm, chamber pressure 1-2Pa, radio-frequency power 40W, in low-doped n-type Ga2O3With
The SiO of 300nm thickness is deposited on Schottky contact electrode2Film；
9) the sample photoetching for completing deposit forms etching SiO2Window；
10) etching removal Schottky electrode top and Ga2O3SiO below recess sidewall2；
11) sample after the completion of etching being placed in oxygen plasma reaction chamber, setting oxygen flow is 200sccm,
Chamber pressure is 30-40Pa, radio-frequency power 50W, etch period 1min, removes photoresist floating glue；
12) sample is lithographically formed to the window of deposit becket and field plate again；
13) sample is put into evaporated metal Ni in electron beam evaporation platform；
14) sample after the completion of evaporation is got rid of into the metal on photoresist and photoresist, forms becket and Schottky
Field plate region is contacted, the production of Schottky diode is completed.
The invention has the following advantages over the prior art:
1. the present invention cooperates high dielectric constant due to preparing becket on the slope groove with certain tilt angle
Field plate structure of the oxide layer as dielectric material, compared to common field plate structure, its becket on groove can be more into one
Step improves the distribution of the edge electric field strength of Schottky electrode, compared to planar structure becket its be at certain angle of inclination
Slope groove structure can more three-dimensionally make the distribution uniformity of Schottky electrode edge electric field strength, to further increase
The breakdown voltage of device.
2. the present invention is due in becket and the disposable photoetching of Schottky contacts field plate and depositing metal forming, technique letter
It is single.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the invention；
Fig. 2 is the fabrication processing schematic diagram of device of the present invention.
Specific implementation
Referring to Fig.1, the Schottky diode for the high-breakdown-voltage that the present invention makes includes:
Metal ohmic contact Au layer 1, metal ohmic contact Ti layer 2, doped n-type Ga2O3Substrate 3 and low-doped n-type
Ga2O3Film 4, low-doped n-type Ga2O3Slope groove platform 5 is provided on film, the side wall of slope groove platform 5 is equipped with becket 6,
The table top of slope groove platform 5 is equipped with Schottky electrode Ni layer 7 and Schottky electrode Au layer 8, Schottky electrode Ni layer 7 and Xiao Te
The two sides of base electrode Au layer 8 are equipped with dielectric 9, Schottky electrode Ni layer 7 and Schottky electrode Au layer 8 and dielectric 9 it
It is equipped with Schottky field plate 10.
The Ohmic contact Au metal layer 1 with a thickness of 100nm-200nm, the thickness of Ohm contact electrode Ti metal layer 2
For 20nm-50nm；
The doped n-type Ga2O3The electron concentration of substrate 3 is 1018cm-3-1019cm-3；
The low-doped n-type Ga2O3The carrier concentration of film 4 is 1017cm-3-1018cm-3, thickness is greater than 1 μm；
The low-doped n-type Ga2O3Slope groove 5 is etched by plasma etching machine to be formed, etching depth 400-
600nm, tilt angle are 40 ° -60 °；
The Schottky electrode Ni layer 7 with a thickness of 20nm-50nm, Schottky electrode Au layer 8 with a thickness of 100nm-
200nm；
The dielectric 9 includes Si3N4、Al2O3、SiO2、HfO2With one of HfSiO or a variety of, with a thickness of
100nm-500nm；
The length of the Schottky field plate 10 is 1 μm -3 μm.
Referring to Fig. 2, the production method of above-mentioned high-breakdown-voltage Schottky diode provides following three kinds of embodiments:
Embodiment 1 makes low-doped n-type Ga2O3Slope depth of groove is 400nm, the high breakdown potential that tilt angle is 40 °
Press Schottky diode.
Step 1, to doped n-type Ga2O3Substrate carries out standard cleaning, such as Fig. 2 (a).
1a) by doped n-type Ga2O3Substrate is put into 80 DEG C of organic cleaning fluid and cleans 20min；
The substrate after organic washing 1b) is cleaned into 40s using the deionized water of flowing；
The substrate after cleaning up 1c) is put into HF:H2Corrode 60s in the solution of O=1:1；
1d) by the Ga after corrosion2O3The deionized water of substrate flowing cleans 60s, and is dried up with high pure nitrogen.
Step 2, epitaxial growth low-doped n-type Ga2O3Film, such as Fig. 2 (b).
Substrate after cleaning is put into MOCVD reaction chamber, respectively with TMGa and high-purity O2For the source Ga and the source O, setting is instead
Answering room temperature is 700 DEG C, and growth pressure 120Pa, TMGa flow is 10sccm, O2Flow is 300sccm, on substrate extension
Growth thickness is the low-doped n-type Ga of 600nm2O3Film.
Step 3, Ohm contact electrode is made, such as Fig. 2 (c).
3a) the doped n-type Ga after epitaxial growth2O3Substrate back evaporated metal Ti/Au, wherein Ti with a thickness of
20nm, Au are with a thickness of 100nm；
3b) in N2The rapid thermal annealing that 550 DEG C, 60s are carried out in environment, forms the sample of Ohm contact electrode.
Step 4, plasma etching groove, such as Fig. 2 (d).
Sample is put into plasma etching machine equipment, BCl is set3Gas flow be 60sccm, Ar2Gas stream
Amount is 20sccm, chamber pressure 25mT, radio-frequency power 150W, and adjustment etching angle is 40 °, in low-doped n-type Ga2O3
The groove that depth is 400nm, tilt angle is 40 ° is etched on film.
Step 5, evaporation deposition W metal/Au, such as Fig. 2 (e).
After the completion of 5a) etching, in the low-doped n-type Ga of sample2O3Upper resist coating is lithographically derived deposit Schottky electrode
Window.
5b) sample after photoetching is put into electron beam evaporation platform, setting electron gun vacuum degree is 6.7 × 10-3Pa, preheating
Electric current is 0.6A, preheating time 5min, electric field 8KV, in low-doped n-type Ga2O3Upper evaporation deposition W metal/Au, wherein metal
Ni is with a thickness of 20nm, and metal Au is with a thickness of 100nm.
Step 6, metal-stripping, such as Fig. 2 (f).
The sample for completing deposit is got rid of into the metal on photoresist and photoresist, forms Schottky contact electrode.
Step 7, PECVD deposits SiO2Film, such as Fig. 2 (g).
The sample for forming Schottky contact electrode is put into PECVD device, reacting gas source SiH is set4Flow be
40sccm, N2The flow of O is 10sccm, chamber pressure 1.5Pa, radio-frequency power 40W, in low-doped n-type Ga2O3And Xiao
Te Ji contacts the SiO that 300nm thickness is deposited on electrode2Film.
Step 8, it is lithographically formed etching SiO2Window is etched, SiO is etched2, such as Fig. 2 (h).
Photoetching 8a) is carried out to the sample that deposit is completed, forms etching SiO2Window；
8b) etching removal Schottky electrode top and Ga2O3SiO below recess sidewall2。
Step 9, it is lithographically formed the window of becket and field plate, such as Fig. 2 (i).
9a) sample after the completion of etching is placed in oxygen plasma reaction chamber, setting oxygen flow is 200sccm,
Chamber pressure is 30Pa, radio-frequency power 50W, etch period 1min, removes photoresist floating glue.
Sample 9b) is lithographically formed to the window of deposit becket and field plate again.
Step 10, evaporated metal Ni, such as Fig. 2 (j).
Sample is put into electron beam evaporation platform, setting electron gun vacuum degree is 6.7 × 10-3Pa, pre- thermocurrent are 0.6A,
Preheating time 5min, electric field 8KV, in low-doped n-type Ga2O3Upper evaporation deposition W metal.
Step 11, metal-stripping completes the production, such as Fig. 2 (k).
Sample after the completion of evaporation is got rid of into the metal on photoresist and photoresist, forms becket and Schottky contacts
The production of Schottky diode is completed in field plate region.
Embodiment 2, production etching depth are 500nm, the low-doped n-type Ga that tilt angle is 50 °2O3Slope groove high strike
Wear voltage Schottky diode.
Step 1, to doped n-type Ga2O3Substrate carries out standard cleaning, such as Fig. 2 (a).
The specific implementation of this step is identical as the step 1 of embodiment 1.
Step 2, epitaxial growth low-doped n-type Ga2O3Film, such as Fig. 2 (b).
Substrate after cleaning is put into MOCVD reaction chamber, respectively with TMGa and high-purity O2For the source Ga and the source O, setting is instead
Answering room temperature is 800 DEG C, and growth pressure 120Pa, TMGa flow is 10sccm, O2Flow is 300sccm, on substrate extension
Growth thickness is the low-doped n-type Ga of 700nm2O3Film.
Step 3 makes Ohm contact electrode, such as Fig. 2 (c).
3.1) the doped n-type Ga after epitaxial growth2O3Substrate back evaporated metal Ti/Au, wherein Ti with a thickness of
30nm, Au are with a thickness of 150nm；
3.2) in N2The rapid thermal annealing that 550 DEG C, 60s are carried out in environment, forms the sample of Ohm contact electrode.
Step 4, plasma etching groove, such as Fig. 2 (d).
Sample is put into plasma etching machine equipment, BCl is set3Gas flow be 60sccm, Ar2Gas stream
Amount is 20sccm, chamber pressure 25mT, radio-frequency power 150W, and adjustment etching angle is 50 °, in low-doped n-type Ga2O3
The groove that depth is 500nm, tilt angle is 50 ° is etched on film.
Step 5, evaporation deposition W metal/Au, such as Fig. 2 (e).
5.1) after the completion of etching, in the low-doped n-type Ga of sample2O3Upper resist coating is lithographically derived deposit Schottky electrode
Window.
5.2) sample after photoetching is put into electron beam evaporation platform, setting electron gun vacuum degree is 6.7 × 10-3Pa, in advance
Thermocurrent is 0.6A, preheating time 5min, electric field 8KV, in low-doped n-type Ga2O3Upper evaporation deposition W metal/Au, wherein gold
Belong to Ni with a thickness of 40nm, metal Au is with a thickness of 150nm.
Step 6, metal-stripping, such as Fig. 2 (f).
The specific implementation of this step is identical as the step 6 of embodiment 1.
Step 7, PECVD deposit SiO2Film, such as Fig. 2 (g).
The sample for forming Schottky contact electrode is put into PECVD device, reacting gas source SiH is set4Flow be
40sccm, N2The flow of O is 10sccm, chamber pressure 1.7Pa, radio-frequency power 40W, in low-doped n-type Ga2O3And Xiao
Te Ji contacts the SiO that 300nm thickness is deposited on electrode2Film.
Step 8 is lithographically formed etching SiO2Window is etched, SiO is etched2, such as Fig. 2 (h).
The specific implementation of this step is identical as the step 8 of embodiment 1.
Step 9 is lithographically formed the window of becket and field plate, such as Fig. 2 (i).
9.1) sample after the completion of etching being placed in oxygen plasma reaction chamber, setting oxygen flow is 200sccm,
Chamber pressure is 35Pa, radio-frequency power 50W, etch period 1min, removes photoresist floating glue.
9.2) sample is lithographically formed to the window of deposit becket and field plate again.
Step 10, evaporated metal Ni, such as Fig. 2 (j).
The specific implementation of this step is identical as the step 10 of embodiment 1.
Step 11, metal-stripping complete the production, such as Fig. 2 (k).
The specific implementation of this step is identical as the step 11 of embodiment 1.
Embodiment A, production etching depth are 600nm, the low-doped n-type Ga that tilt angle is 60 °2O3Slope groove high strike
Wear voltage Schottky diode.
A1, to doped n-type Ga2O3Substrate carries out standard cleaning, such as Fig. 2 (a).
The specific implementation of this step is identical as the step 1 of embodiment 1.
A2, epitaxial growth low-doped n-type Ga2O3Film, such as Fig. 2 (b).
Substrate after cleaning is put into MOCVD reaction chamber, respectively with TMGa and high-purity O2For the source Ga and the source O, setting is instead
Answering room temperature is 850 DEG C, and growth pressure 120Pa, TMGa flow is 10sccm, O2Flow is 300sccm, on substrate extension
Growth thickness is the low-doped n-type Ga of 800nm2O3Film.
A3 makes Ohm contact electrode, such as Fig. 2 (c).
The first doped n-type Ga after epitaxial growth2O3Substrate back evaporated metal Ti/Au, wherein Ti with a thickness of
50nm, Au are with a thickness of 200nm；Again in N2The rapid thermal annealing that 550 DEG C, 60s are carried out in environment, forms the sample of Ohm contact electrode
Product.
A4, plasma etching groove, such as Fig. 2 (d).
Sample is put into plasma etching machine equipment, BCl is set3Gas flow be 60sccm, Ar2Gas stream
Amount is 20sccm, chamber pressure 25mT, radio-frequency power 150W, and adjustment etching angle is 60 °, in low-doped n-type Ga2O3
The groove that depth is 600nm, tilt angle is 60 ° is etched on film.
A5, evaporation deposition W metal/Au, such as Fig. 2 (e).
After the completion of etching, first in the low-doped n-type Ga of sample2O3Upper resist coating is lithographically derived deposit Schottky electrode
Window；The sample after photoetching is put into electron beam evaporation platform again, setting electron gun vacuum degree is 6.7 × 10-3Pa, pre- thermocurrent
For 0.6A, preheating time 5min, electric field 8KV, in low-doped n-type Ga2O3Upper evaporation deposition W metal/Au, wherein W metal is thick
Degree is 50nm, and metal Au is with a thickness of 200nm.
A6, metal-stripping, such as Fig. 2 (f).
The specific implementation of this step is identical as the step 6 of embodiment 1.
A7, PECVD deposit SiO2Film, such as Fig. 2 (g).
The sample for forming Schottky contact electrode is put into PECVD device, reacting gas source SiH is set4Flow be
40sccm, N2The flow of O is 10sccm, chamber pressure 2Pa, radio-frequency power 40W, in low-doped n-type Ga2O3And Xiao Te
Base contacts the SiO that 300nm thickness is deposited on electrode2Film.
A8 is lithographically formed etching SiO2Window is etched, SiO is etched2, such as Fig. 2 (h).
The specific implementation of this step is identical as the step 8 of embodiment 1.
A9 is lithographically formed the window of becket and field plate, such as Fig. 2 (i).
First the sample after the completion of etching is placed in oxygen plasma reaction chamber, setting oxygen flow is 200sccm, instead
Answering chamber pressure is 40Pa, radio-frequency power 50W, etch period 1min, removes photoresist floating glue；Sample is lithographically formed shallow lake again
The window of product becket and field plate.
A10, evaporated metal Ni, such as Fig. 2 (j).
The specific implementation of this step is identical as the step 10 of embodiment 1.
A11, metal-stripping complete the production, such as Fig. 2 (k).
The specific implementation of this step is identical as the step 11 of embodiment 1.
Three examples only of the invention are discussed in detail above, do not constitute any limitation of the invention, this field
It will be appreciated by the skilled person that certain repair can be done to device architecture of the invention in the range for not departing from essence of the invention
Changing, preparation method is also not necessarily limited to above-mentioned disclosure of that, all equivalent changes and modifications done according to the claims in the present invention,
It is all covered by the present invention.
Claims (10)
1. a kind of Schottky diode of high-breakdown-voltage includes: Au layers of (1), Ohmic contact of metal ohmic contact from bottom to top
Ti layers of metal (2), doped n-type Ga2O3Substrate (3) and low-doped n-type Ga2O3Film (4), it is characterised in that:
Low-doped n-type Ga2O3Slope groove platform (5) is provided on film, the side wall of slope groove platform (5) is equipped with becket (6),
The table top of slope groove platform (5) is equipped with Schottky electrode Ni layers (7) and Au layers of Schottky electrode (8)；
The two sides of Ni layers of Schottky electrode (7) and Schottky electrode Au layers (8) are equipped with dielectric (9)；
Schottky field plate (10) are equipped with on dielectric (9) for Ni layers of Schottky electrode (7) and Au layers of Schottky electrode (8).
2. diode according to claim 1, it is characterised in that: N-shaped Ga2O3The electron concentration of substrate (3) is 1018cm-3-
1019cm-3。
3. diode according to claim 1, it is characterised in that: low-doped n-type Ga2O3The carrier concentration of film (4) is
1017cm-3-1018cm-3, thickness is greater than 1 μm.
4. diode according to claim 1, it is characterised in that: low-doped n-type Ga2O3Slope groove (5) is by plasma
Etching machine etches to be formed, etching depth 400-600nm, and tilt angle is 40 ° -60 °.
5. diode according to claim 1, it is characterised in that: the dielectric (9) includes Si3N4、Al2O3、SiO2、
HfO2With one of HfSiO or a variety of, with a thickness of 100nm-500nm.
6. diode according to claim 1, it is characterised in that: the length of the Schottky field plate (10) is 1 μm -3 μm.
7. diode according to claim 1, it is characterised in that: Ohmic contact Au metal layer (1) with a thickness of 100nm-
200nm, Ohm contact electrode Ti metal layer (2) with a thickness of 20nm-50nm.
8. diode according to claim 1, it is characterised in that: Ni layers of Schottky electrode (7) with a thickness of 20nm-
50nm, Au layers of Schottky electrode (8) with a thickness of 100nm-200nm.
9. a kind of method for making high-breakdown-voltage Schottky diode, characterized by the following steps:
1) to doped n-type Ga2O3Substrate carries out standard cleaning；
2) substrate after cleaning is put into MOCVD reaction chamber, setting growth temperature is 700-850 DEG C, and growth pressure is
120Pa, epitaxial growth with a thickness of 600-800nm low-doped n-type Ga2O3Film；
3) substrate delayed outside is put into electron beam evaporation platform, in Ga2O3Substrate back evaporated metal Ti/Au, the wherein thickness of Ti
Degree is 20-50nm, and Au is with a thickness of 100-200nm, then in N2The rapid thermal annealing that 550 DEG C, 60s are carried out in environment, forms Europe
The sample of nurse contact electrode；
4) sample is put into plasma etching machine equipment, BCl is set3Gas flow be 60sccm, Ar2Gas flow
For 20sccm, chamber pressure 25mT, radio-frequency power 150W, in low-doped n-type Ga2O3On etch depth be 400-
600nm, the groove that tilt angle is 40 ° -60 °；
5) in low-doped n-type Ga2O3Upper resist coating is lithographically derived the window of deposit Schottky electrode；
6) sample after photoetching is put into electron beam evaporation platform, in low-doped n-type Ga2O3Upper evaporation deposition W metal/Au,
Middle W metal is with a thickness of 20-50nm, and metal Au is with a thickness of 100-200nm；
7) sample for completing deposit is got rid of into the metal on photoresist and photoresist, forms Schottky contact electrode；
8) sample for forming Schottky contact electrode is put into PECVD device, reacting gas source SiH is set4Flow be
40sccm, N2The flow of O is 10sccm, chamber pressure 1-2Pa, radio-frequency power 40W, in low-doped n-type Ga2O3And Xiao
Te Ji contacts the SiO that 300nm thickness is deposited on electrode2Film；
9) the sample photoetching for completing deposit forms etching SiO2Window；
10) etching removal Schottky electrode top and Ga2O3SiO below recess sidewall2；
11) sample after the completion of etching is placed in oxygen plasma reaction chamber, setting oxygen flow is 200sccm, reaction
Chamber pressure is 30-40Pa, radio-frequency power 50W, etch period 1min, removes photoresist floating glue；
12) sample is lithographically formed to the window of deposit becket and field plate again；
13) sample is put into evaporated metal Ni in electron beam evaporation platform；
14) sample after the completion of evaporation is got rid of into the metal on photoresist and photoresist, forms becket and Schottky contacts
The production of Schottky diode is completed in field plate region.
10. according to the method described in claim 9, it is characterized in that doped n-type Ga in 1)2O3Substrate carries out standard cleaning
Steps are as follows:
1a) first carry out organic washing；
1b) cleaned using the deionized water of flowing；
1c) it is put into HF:H2Corrode 30-60s in the solution of O=1:1；
It 1d) is cleaned with the deionized water of flowing and is dried up with high pure nitrogen.
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