CN106876852A - A kind of multilayer power splitter levels microstrip circuit attachment structure - Google Patents
A kind of multilayer power splitter levels microstrip circuit attachment structure Download PDFInfo
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- CN106876852A CN106876852A CN201510927392.0A CN201510927392A CN106876852A CN 106876852 A CN106876852 A CN 106876852A CN 201510927392 A CN201510927392 A CN 201510927392A CN 106876852 A CN106876852 A CN 106876852A
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- circuit
- microstrip
- metallic conduction
- copper
- conduction post
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
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Abstract
The present invention provides a kind of multilayer power splitter levels microstrip circuit attachment structure, including upper strata microstrip circuit (1), lower floor's microstrip circuit (2), floor (3), metallic conduction post (4), redundancy layers of copper circuit (5).Metallic conduction post (4) crosses metallization via and runs through the upper strata microcircuit (1), floor (3), lower floor's microstrip circuit (2), increase copper redundant circuit (5) on the junction of the upper strata microcircuit (1) and metallic conduction post (4), increase copper redundant circuit (5) under the junction of lower floor's microstrip circuit (2) and metallic conduction post (4), the copper redundant circuit (5) increases metallic conduction post (4) with upper strata microstrip circuit (1) metallic conduction post (4) and the contact area of lower floor's microstrip circuit (2).
Description
Technical field
The invention belongs to microwave, field of antenna, it is related to a kind of multilayer power splitter levels microstrip circuit attachment structure.
Background technology
Input signal power is divided into power divider (power splitter) one kind of equal or unequal multiple-channel output
Multiport Microwave Net.Power splitter can be realized using various transmission lines, it is the most frequently used it is main have waveguide power divider,
Coaxial line power splitter and microstrip line power splitter.Waveguide power divider has the advantages that the small, power capacity of loss is big.But
It is that its transmission line structure determines that waveguide power divider is easy of integration, size is difficult to the shortcoming that minimizes.Coaxial line work(
The advantage of point device is big power capacity, is lost small, has the disadvantage that output end standing-wave ratio is larger and does not have between output port
There is isolation.Although microstrip line construction power splitter loss is slightly larger, due to its compact conformation, with low cost, property
Energy is stable, be easy to the advantage integrated with other active devices, is had a very wide range of applications in radar system.
However as the fast development of radar industry, performance indications higher are it is also proposed to power splitter and size will
Ask.In the development and production of certain New Type Radar, the microstrip power divider circuit of assembling has integrated level Gao ﹑ small volumes,
And large-scale application is in active phase array antenna microwave array Transmission system.Because the radar antenna function is more,
Integrated level is high, and has strict requirements to size, this also cause power splitter ensure electrical property while its
Size is small as far as possible.The design of multilayer power splitter can effectively reduce the size of power splitter, such as Fig. 1
It is shown.In traditional multilayer power splitter design, plated through-hole and conductive pole be connection upper strata microstrip circuit and under
Whether good contact is by directly with levels microstrip circuit for the bridge of layer microstrip circuit, metallization via and conductive pole
Determine the performance of power splitter.But existing processing technology is it is difficult to ensure that metallization via size on soft-medium plate.
When the pore radius that metallized is bigger than normal, metallization via can not be contacted so as to influence power splitter with conductive pole well
Performance.When the pore radius that metallized is less than normal, metallization via is extruded during equipment by conductive pole
When, the metal surface of via becomes coarse, causes the discontinuity of circuit and strengthens, so that power splitter conducts
Loss increase.In order to solve the above problems, the present invention is by metallization via and conductive pole and levels micro-strip
The junction of circuit increases specific redundancy layers of copper circuit to ensure the reliable contacts of power splitter levels circuit, changes
The performance of kind power splitter, improves the yield rate of power splitter.
The content of the invention
The purpose of the present invention is：
The yield rate of power splitter is improved, the debug time of power splitter is effectively reduced.
Technical solution of the present invention is provided：
A kind of multilayer power splitter levels microstrip circuit attachment structure, including upper strata microstrip circuit 1, lower floor's micro-strip
Circuit 2, floor 3, metallic conduction post 4, redundancy layers of copper circuit 5.The metallization via excessively of metallic conduction post 4 is passed through
The upper strata microcircuit 1 is worn, floor 3, lower floor's microstrip circuit 2 is led in the upper strata microcircuit 1 with metal
Increase copper redundant circuit 5 on the junction of electric post 4, in lower floor's microstrip circuit 2 and metallic conduction post 4
Increase copper redundant circuit 5 under junction, the copper redundant circuit 5 increases metallic conduction post 4 and upper strata micro-strip
The contact area of the metallic conduction post 4 of circuit 1 and lower floor's microstrip circuit 2.
The redundancy layers of copper circuit 5 includes connection circuit 5-1, regulation circuit 5-2, expands circuit 5-3, described
Connection circuit 5-1 is connected with metallic conduction post 4, and there is the connection circuit 5-1 circular arc chamfering 5-4 improvement to connect
To avoid the generation of higher mode, the regulation circuit 5-2 is the extremely narrow layers of copper of one section of width to the discontinuity at the place of connecing
Circuit, the regulation circuit 5-2 connects the connection circuit 5-1 and expands circuit 5-3, the expansion circuit
5-3 expands the contact area of redundancy layers of copper circuit and microstrip circuit.
It is an advantage of the invention that：
(1) power splitter yield rate and stability are improved.Experimental result surface uses the present invention and does not use
The yield rate of product of the present invention is respectively 90% and 30%, and yield rate improves 60%.
(2) power splitter debug time is effectively reduced.Statistical experiment result surface, using single test of the present invention
Part debug time was foreshortened to 10 minutes by 2 hours.
(3) present invention design is simple, be easy to transplanting.The present invention by metallization via and conductive pole with it is upper
The junction extra circuits of lower floor's microstrip circuit come strengthen multilayer circuit connection reliability, simple structure,
Method for designing is easy to transplanting, can be conveniently used for using in the microwave device designed by multilayer microstrip circuit.
(4) present invention is easily achieved.Metallic circuit used in the present invention is planar structure, process letter
List and precision is easily controlled, it is easy to accomplish.
Brief description of the drawings
Accompanying drawing of the present invention is illustrated below：
Fig. 1 is multilayer power splitter schematic diagram；
Fig. 2 is microstrip circuit attachment structure side view；
Fig. 3 is microstrip circuit attachment structure top view；
Fig. 4 is redundancy layers of copper circuit diagram；
Fig. 5 is that traditional circuit connects side view；
Fig. 6 is that traditional circuit connects top view.
Wherein：
A：Levels microstrip circuit junction
1：Upper strata microstrip circuit
2：Lower floor's microstrip circuit
3：Floor
4：Metallic conduction post
5：Redundancy layers of copper circuit
5-1：Connection circuit
5-2：Regulation circuit
5-3：Expand circuit
5-4：Circular arc chamfering
Specific embodiment
Fig. 1 is the multilayer power splitter schematic diagram that this is used, and the upper and lower layer microstrip circuit at tie point A makes
Connected with metallization via and metallic conduction post.Because the tie point of the power splitter of this secondary design is more therefore many
Whether the reliable performance to power splitter has a great impact for connection between layer circuit.
Levels microstrip circuit is connected in order to reliable, the circuit that the present invention is used is as shown in Figure 2 and Figure 3.Bag
Include upper strata microstrip circuit 1, lower floor's microstrip circuit 2, floor 3, metallic conduction post 4, redundancy layers of copper circuit 5.
Metallic conduction post 4 crosses metallization via and runs through the upper strata microcircuit 1, floor 3, lower floor's microstrip circuit 2,
Characterized in that, increase copper redundant circuit 5 on the junction of the upper strata microcircuit 1 and metallic conduction post 4,
Increase copper redundant circuit 5 under the junction of lower floor's microstrip circuit 2 and metallic conduction post 4, the copper is superfluous
Remaining circuit 5 increases metallic conduction post 4 with the metallic conduction post 4 of upper strata microstrip circuit 1 and lower floor's microstrip circuit 2
Contact area.The redundancy layers of copper circuit 5 includes connection circuit 5-1, regulation circuit 5-2, expands circuit
5-3, the connection circuit 5-1 is connected with metallic conduction post 4, and the connection circuit 5-1 has circular arc chamfering
5-4 improves the discontinuity of junction to avoid the generation of higher mode, and the regulation circuit 5-2 is one section of width
Extremely narrow layers of copper circuit, the regulation circuit 5-2 connects the connection circuit 5-1 and expands circuit 5-3, institute
State and expand the contact area that circuit 5-3 expands redundancy layers of copper circuit and microstrip circuit.
The increased machining accuracy under existing process condition of redundancy layers of copper circuit 5 is high, at the same time in dress
Timing can be very good to be connected with levels microstrip circuit by the fixed press of upper and lower laminar substrate, effective to improve
The yield rate of multilayer power splitter.Test result indicate that, using the present invention and the yield rate for not using product of the present invention
Respectively 90% and 30%, yield rate improves 60%.Single-piece before debug time has shortens to 10 points in 2 hours
Clock.It will be apparent that effectively raising the yield rate and debugging efficiency of multilayer power splitter using the present invention.
Claims (2)
1. a kind of multilayer power splitter levels microstrip circuit attachment structure, including upper strata microstrip circuit (1), lower floor are micro-
Band circuit (2), floor (3), metallic conduction post (4), redundancy layers of copper circuit (5).Metallic conduction post
(4) cross metallization via and run through the upper strata microcircuit (1), floor (3), lower floor's microstrip circuit (2),
Characterized in that, increasing copper redundancy on the junction of the upper strata microcircuit (1) and metallic conduction post (4)
Circuit (5), increases copper superfluous under the junction of the lower floor's microstrip circuit (2) with metallic conduction post (4)
Remaining circuit (5), the copper redundant circuit (5) increases metallic conduction post (4) and upper strata microstrip circuit (1)
The contact area of metallic conduction post (4) and lower floor's microstrip circuit (2).
2. a kind of multilayer power splitter levels microstrip circuit attachment structure according to claim 1, it is characterised in that
The redundancy layers of copper circuit (5) includes connection circuit (5-1), regulation circuit (5-2), expansion circuit (5-3),
Connection circuit (5-1) is connected with metallic conduction post (4), and connection circuit (5-1) has circular arc
Chamfering (5-4) improves the discontinuity of junction to avoid the generation of higher mode, the regulation circuit (5-2)
Be the extremely narrow layers of copper circuit of one section of width, the regulation circuit (5-2) connect connection circuit (5-1) with
Expand circuit (5-3), it is described to expand the contact surface that circuit (5-3) expands redundancy layers of copper circuit and microstrip circuit
Product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510927392.0A CN106876852B (en) | 2015-12-14 | 2015-12-14 | Connecting structure of upper and lower layer microstrip circuits of multilayer power divider |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510927392.0A CN106876852B (en) | 2015-12-14 | 2015-12-14 | Connecting structure of upper and lower layer microstrip circuits of multilayer power divider |
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| Publication Number | Publication Date |
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| CN106876852A true CN106876852A (en) | 2017-06-20 |
| CN106876852B CN106876852B (en) | 2020-01-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510927392.0A Active CN106876852B (en) | 2015-12-14 | 2015-12-14 | Connecting structure of upper and lower layer microstrip circuits of multilayer power divider |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346845A (en) * | 2018-02-08 | 2018-07-31 | 中国电子科技集团公司第三十八研究所 | A kind of ultra-wideband high power miniaturization power splitter |
| CN109119732A (en) * | 2017-06-26 | 2019-01-01 | 株式会社Wgr | Electromagnetic transmission device |
| CN114256586A (en) * | 2021-11-16 | 2022-03-29 | 中国航空工业集团公司雷华电子技术研究所 | Debugging method of microstrip power divider after laser welding packaging |
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| CN2626190Y (en) * | 2003-05-09 | 2004-07-14 | 威盛电子股份有限公司 | Multilayer base plate |
| CN101095380A (en) * | 2004-12-17 | 2007-12-26 | 先进微装置公司 | Multi-layer printed circuit board comprising a through connection for high frequency applications |
| US20080185180A1 (en) * | 2005-12-02 | 2008-08-07 | Cisco Technology, Inc. | Method for fabricating a printed circuit board having a coaxial via |
| CN101300912A (en) * | 2005-11-04 | 2008-11-05 | 住友电木株式会社 | Method for fabricating multilayer circuit plate, circuit plate, and method for fabricating the circuit plate |
| US20110073359A1 (en) * | 2009-09-30 | 2011-03-31 | International Business Machines Corporation | Through-Hole-Vias In Multi-Layer Printed Circuit Boards |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2626190Y (en) * | 2003-05-09 | 2004-07-14 | 威盛电子股份有限公司 | Multilayer base plate |
| CN101095380A (en) * | 2004-12-17 | 2007-12-26 | 先进微装置公司 | Multi-layer printed circuit board comprising a through connection for high frequency applications |
| CN101300912A (en) * | 2005-11-04 | 2008-11-05 | 住友电木株式会社 | Method for fabricating multilayer circuit plate, circuit plate, and method for fabricating the circuit plate |
| US20080185180A1 (en) * | 2005-12-02 | 2008-08-07 | Cisco Technology, Inc. | Method for fabricating a printed circuit board having a coaxial via |
| US20110073359A1 (en) * | 2009-09-30 | 2011-03-31 | International Business Machines Corporation | Through-Hole-Vias In Multi-Layer Printed Circuit Boards |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119732A (en) * | 2017-06-26 | 2019-01-01 | 株式会社Wgr | Electromagnetic transmission device |
| CN108346845A (en) * | 2018-02-08 | 2018-07-31 | 中国电子科技集团公司第三十八研究所 | A kind of ultra-wideband high power miniaturization power splitter |
| CN108346845B (en) * | 2018-02-08 | 2020-04-28 | 中国电子科技集团公司第三十八研究所 | Ultra-wideband high-power miniaturized power divider |
| CN114256586A (en) * | 2021-11-16 | 2022-03-29 | 中国航空工业集团公司雷华电子技术研究所 | Debugging method of microstrip power divider after laser welding packaging |
| CN114256586B (en) * | 2021-11-16 | 2023-03-14 | 中国航空工业集团公司雷华电子技术研究所 | Debugging method of microstrip power divider after laser welding packaging |
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| CN106876852B (en) | 2020-01-10 |
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