CN106876567A - Height radiating diode package structure - Google Patents
Height radiating diode package structure Download PDFInfo
- Publication number
- CN106876567A CN106876567A CN201710144653.0A CN201710144653A CN106876567A CN 106876567 A CN106876567 A CN 106876567A CN 201710144653 A CN201710144653 A CN 201710144653A CN 106876567 A CN106876567 A CN 106876567A
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- Prior art keywords
- heat conduction
- backlight unit
- substrate
- conduction bar
- diode chip
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- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000000084 colloidal system Substances 0.000 claims abstract description 40
- 238000012856 packing Methods 0.000 claims abstract description 38
- 230000001186 cumulative effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005286 illumination Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of radiating diode package structure high, including substrate, radiating piece, diode chip for backlight unit, negative pin and packing colloid, diode chip for backlight unit and radiating piece are respectively and fixedly connected with the opposing sides of substrate, positive pole pin and negative pin are electrically connected with diode chip for backlight unit, substrate, radiating piece and diode chip for backlight unit are packaged in packing colloid, also include reflecting drum and multiple heat conduction bars, reflecting drum is coated on packing colloid, multiple heat conduction bars are arranged around diode chip for backlight unit, each heat conduction bar is embedded in packing colloid, the end of each heat conduction bar is fixed on substrate, the outer wall of each heat conduction bar is reflector layer.The radiating diode package structure high that the present invention is provided, heat conduction bar in packing colloid transfers heat to substrate, heat is distributed by radiating piece by substrate, heat conduction bar is launched the light that diode chip for backlight unit is sent out by the reflector layer of its outer wall simultaneously, prevents from being influenceed because heat conduction bar is set the illumination effect of diode chip for backlight unit.
Description
Technical field
The present invention relates to semiconductor technology, and in particular to a kind of radiating diode package structure high.
Background technology
Diode package is the semiconductor element on basis, known, and diode package includes substrate, is arranged at substrate
On diode chip for backlight unit the positive pole pin and negative pin that are connected with the diode chip for backlight unit, substrate, diode chip for backlight unit and extremely
Small part positive pole pin and negative pin are packaged in the packing colloid.
Heat dispersion is the important indicator for influenceing diode package service life and luminous efficacy, diode chip for backlight unit work
More heat can be produced during work, in order to distribute the heat, away from the one of diode chip for backlight unit on the most substrate of prior art
Side sets radiating piece, such as aluminum products of high thermal conductivity, Al-alloy products, for further improving heat radiation efficiency, is then dissipating
It is improved further on the material and structure of warmware, Application No. " 201210062079.1 ", publication date is
" 2016.8.23 ", entitled " package structure for LED ", and Application No. " 200980113720.6 ", publication date is
" 2013.1.23 ", the patent of entitled " LED package " it is disclosed certain be not such diode package.
The reason for prior art concentrates on the setting radiator structure at the back side (away from the one side of diode chip for backlight unit) of substrate exists
In the front (setting the one side of diode chip for backlight unit) of substrate is packing colloid, and packing colloid is transparent configuration, and it is diode core
The luminous of piece, cannot set radiator structure inside it.But in actual applications, the radiating piece of substrate back has height mostly
The heat-sinking capability of effect, its heat-sinking capability is sufficient, is just the packing colloid for being located at substrate front side, and its thermal conductivity is relatively low and without extra
Radiator structure so that its centrostigma for turning into heat and be difficult to fully release, and then influence diode package service life
And luminous efficacy.
The content of the invention
It is an object of the invention to provide a kind of radiating diode package structure high, to solve above-mentioned deficiency of the prior art
Part.
To achieve these goals, the present invention provides following technical scheme：
A kind of radiating diode package structure high, including substrate, radiating piece, diode chip for backlight unit, positive pole pin, negative pin
And packing colloid, the diode chip for backlight unit and radiating piece be respectively and fixedly connected with the opposing sides of the substrate, and the positive pole draws
Pin and negative pin are electrically connected with the diode chip for backlight unit, and the substrate, radiating piece and diode chip for backlight unit are packaged in described
In packing colloid, also including reflecting drum and multiple heat conduction bars, the reflecting drum is coated on packing colloid, multiple heat conduction bars
Around diode chip for backlight unit arrangement, each heat conduction bar is embedded in the packing colloid, and the end of each heat conduction bar is equal
It is fixed on the substrate, the outer wall of each heat conduction bar is reflector layer.
Above-mentioned radiating diode package structure high, the one side of the heat conduction bar is curved reflection face, the curved reflection
Face is oppositely arranged with the diode chip for backlight unit.
Above-mentioned radiating diode package structure high, the radial dimension that passed through on the heat conduction bar is passed successively
Increase, the heat conduction bar is connected on the substrate with the larger one end of its radial dimension.
Above-mentioned radiating diode package structure high, the heat conduction article include that bottom surface and the plane perpendicular set the
One side and the second side arranged with the inclined bottom surface, the second side is arcwall face, and the heat conduction bar is with described
Second side is oppositely arranged with the diode chip for backlight unit, and the bottom surface fits with the substrate.
Above-mentioned radiating diode package structure high, the outer wall from the diode chip for backlight unit is described to lead to the reflecting drum
The arrangement density of hot bar diminishes successively, and the arrangement density refers to the total of the heat conduction bar in packing colloid described in unit volume
Volume.
Above-mentioned radiating diode package structure high, the heat conduction bar is inclined or is arranged vertically with the substrate.
Above-mentioned radiating diode package structure high, the substrate includes the central part fitted with the diode chip for backlight unit
With the ring part around the central part, the thickness of the central part sets more than the thickness of the ring part on the radiating piece
Groove is equipped with, the central part is embedded in the groove.
Above-mentioned radiating diode package structure high, is provided with bonding pad on the substrate, each heat conduction bar is all connected with
In on a side of the bonding pad, bulge-structure, the radiating piece are set on relative another side of the bonding pad
On be provided with caulking groove with the bulge-structure phase clamping.
Above-mentioned radiating diode package structure high, the bonding pad is located at the marginal portion of the substrate.
Above-mentioned radiating diode package structure high, the bulge-structure is towards away from the direction of the diode chip for backlight unit
The structure of extension.
In the above-mentioned technical solutions, the radiating diode package structure high that the present invention is provided, the heat conduction bar in packing colloid
Substrate is transferred heat to, heat is distributed by radiating piece by substrate, while the reflector layer that heat conduction bar passes through its outer wall will
The light of diode chip for backlight unit hair is launched, in addition packing colloid overcoat reflecting drum, is prevented in terms of two because setting heat conduction bar
And influence the illumination effect of diode chip for backlight unit.
Brief description of the drawings
In order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing for needing to use is briefly described, it should be apparent that, drawings in the following description are only described in the present invention
A little embodiments, for those of ordinary skill in the art, can also obtain other accompanying drawings according to these accompanying drawings.
Fig. 1 is the front view of radiating diode package structure high provided in an embodiment of the present invention；
Fig. 2 is the top view of radiating diode package structure high provided in an embodiment of the present invention；
Fig. 3 is the structural representation of heat conduction bar provided in an embodiment of the present invention；
Fig. 4 is the structural representation of substrate provided in an embodiment of the present invention；
Fig. 5 is the structural representation of radiating piece provided in an embodiment of the present invention.
Description of reference numerals：
1st, substrate；1.1st, central part；1.2nd, ring part；1.3rd, bonding pad；1.4th, bulge-structure；2nd, radiating piece；2.1st, it is recessed
Groove；2.2nd, caulking groove；3rd, diode chip for backlight unit；4th, positive pole pin；5th, negative pin；6th, packing colloid；7th, reflecting drum；8th, heat conduction bar；
8.1st, bottom surface；8.2nd, first side；8.3rd, second side.
Specific embodiment
In order that those skilled in the art more fully understands technical scheme, below in conjunction with accompanying drawing to this hair
It is bright to be further detailed.
As Figure 1-5, a kind of radiating diode package structure high provided in an embodiment of the present invention, including substrate 1, radiating
Part 2, diode chip for backlight unit 3, positive pole pin 4, negative pin 5 and packing colloid 6, the diode chip for backlight unit 3 and radiating piece 2 are distinguished
It is fixed in the opposing sides of the substrate 1, the positive pole pin 4 and negative pin 5 are electrically connected with the diode chip for backlight unit 3,
The substrate 1, radiating piece 2 and diode chip for backlight unit 3 are packaged in the packing colloid 6, are also led including reflecting drum 7 and multiple
Hot bar 8, the reflecting drum 7 is coated on packing colloid 6, and multiple heat conduction bars 8 are arranged around the diode chip for backlight unit 3, respectively
The heat conduction bar 8 is embedded in the packing colloid 6, and the end of each heat conduction bar 8 is fixed on the substrate 1, each institute
The outer wall for stating heat conduction bar 8 is reflector layer.
Specifically, diode chip for backlight unit 3 is used to be lighted after connecing electricity, positive pole pin 4 and negative pin 5 are used to be diode chip for backlight unit
3 introduce electric current, and diode chip for backlight unit 3 is fixed on the front of substrate 1, and radiating piece 2 sets the back side of substrate 1 (departing from installation two
The one side of pole pipe chip 3) on, radiating piece 2 is the radiator structure manufactured by high thermal conductivity material, such as aluminium, copper and its alloy product,
, to substrate 1, substrate 1 is again by the heat transfer to radiating piece 2, radiating for the heat transfer distributed in the course of work of diode chip for backlight unit 3
Part 2 again distributes the heat, so realizes the distributing near the heat of the one end of substrate 1 of diode chip for backlight unit 3.Meanwhile, two poles
Most of heat transfer of die 3 is provided with multiple heat conduction bars 8 in packing colloid 6 in packing colloid 6, each heat conduction bar 8
End is connected on substrate 1, and the heat transfer of the part that such diode chip for backlight unit 3 is located in packing colloid 6 gives packing colloid
6, to heat conduction bar 8, the heat transfer of heat conduction bar 8 is to substrate 1, and last heat is same for the most of heat transfer in packing colloid 6
Distributed by radiating piece 2.Likewise, heat conduction bar 8 is manufactured for high thermal conductivity material, due to the thermal conductivity of of packing colloid 6 itself
Relatively low, the thermal conductivity of heat conduction bar 8 is higher, and the heat in such packing colloid 6 continuously can be transmitted to the collection coalescence of heat conduction bar 8
Substrate 1.
In the present embodiment, for the light for preventing 8 block diode chip of heat conduction bar 3 from launching, by each heat conduction bar 8 around two
Pole pipe chip 3 arranges, so hinders on the direction of substrate 1, having no heat conduction bar 8 on the light emission direction of diode chip for backlight unit 3
Gear, the major part of such diode chip for backlight unit 3 is luminous unaffected, substantial portion of in addition on parallel to the direction of substrate 1
The light of the transmitting of diode chip for backlight unit 3 can be stopped that the present embodiment sets reflector layer on the outer wall of heat conduction bar 8 by heat conduction bar 8, such as plate
Silver layer or other ray structures, so reduce luminous blocking effect of the heat conduction bar 8 to diode chip for backlight unit 3 as far as possible, in addition,
Reflecting drum 7 is set in the outside of packing colloid 6, packing colloid 6 is surround by reflecting drum 7, reflecting drum 7 is used for reflection light, so
Diode chip for backlight unit 3 directly reaches reflecting drum 7 in the light portion of the direction transmitting parallel to substrate 1, is reflected by reflecting drum 7
Go, do not influence or have little influence on the illumination effect of diode chip for backlight unit 3, and another part is reflected by heat conduction bar 8, by heat conduction bar
The light portion of 8 reflections is directly reflected away, remaining to reflex to reflecting drum 7, is finally also reflected away by reflecting drum 7.This reality
In applying example, it is preferred that heat conduction bar 8 be arranged in parallel with reflecting drum 7 or less parallel is set, so that being reflected by heat conduction bar 8
Light nearly all reflect away, the secondary reflection without may require that reflecting drum 7.
Radiating diode package structure high provided in an embodiment of the present invention, during preparation, first can be welded to base by heat conduction bar 8
On plate 1, the encapsulation of substrate 1, heat conduction bar 8, radiating piece 2 and diode chip for backlight unit 3 is finally carried out, it is also possible to after encapsulating structure,
Cavernous structure is opened up on packing colloid 6 by laser-induced thermal etching or other methods until substrate 1, finally inserts in cavernous structure
Enter heat conduction bar 8.
Radiating diode package structure high provided in an embodiment of the present invention, heat conduction bar 8 in packing colloid 6 is by heat transfer
To substrate 1, heat is distributed by radiating piece 2 by substrate 1, at the same heat conduction bar 8 by the reflector layer of its outer wall by diode
The light of the hair of chip 3 is launched, in addition the overcoat reflecting drum 7 of packing colloid 6, is prevented in terms of two because of setting heat conduction bar 8
Influence the illumination effect of diode chip for backlight unit 3.
In the present embodiment, as shown in figure 3, further, the one side of the heat conduction bar 8 is curved reflection face, the arc
Reflective surface is oppositely arranged with the diode chip for backlight unit 3, and curved reflection face is anti-for collecting the light that coalescence launches diode chip for backlight unit 3
The outside of packing colloid 6 is mapped to, so that heat conduction bar 8 does not interfere with the illumination effect of diode chip for backlight unit 3 not only, one is entered on the contrary
Step lifts its luminous compacting effect.
In the present embodiment, further, the radial dimension that passed through on the heat conduction bar 8 is incremented by successively, institute
State heat conduction bar 8 to be connected on the substrate 1 with the larger one end of its radial dimension, the heat of heat conduction bar 8 is from away from substrate 1
End is delivered on substrate 1, therefore the heat that it is transmitted closer to substrate 1 is more, sets the heat conduction bar 8 that radial dimension increases successively
Its heat transfer efficiency is lifted, and it is smaller away from one end size of substrate 1, reduce the influence of its illumination effect to diode chip for backlight unit 3.
In the present embodiment, further, the heat conduction bar 8 includes that bottom surface 8.1 and the bottom surface 8.1 are vertically disposed
First side 8.2 and the second side 8.3 being in tilted layout with the bottom surface 8.1, the second side 8.3 are arcwall face, institute
State heat conduction bar 8 to be oppositely arranged with the diode chip for backlight unit 3 with the second side 8.3, the bottom surface 8.1 and the phase of the substrate 1
Laminating, causes that heat conduction bar 8 is more consolidated with connection such as welding, the grafting of substrate 1 with the vertically disposed first side 8.2 of substrate 1,
And inclined second side 8.3 has double action, it is parallel with reflecting drum 7 that one can be set, and makes its reflecting effect preferably,
Secondly it causes that heat conduction bar 8 turns into the structure that radial dimension is gradually incremented by with the vertical collective effect of first side 8.2, so allow
Heat conduction bar 8 is provided simultaneously with three kinds of technique effects：Firm connection, high reflection efficiency and high-heat conductive efficency.
In the present embodiment, it is preferred that from the outer wall of the diode chip for backlight unit 3 to the reflecting drum 7, the heat conduction bar 8
Arrangement density diminishes successively, and the arrangement density refers to the totality of the heat conduction bar 8 in packing colloid 6 described in unit volume
Product, the heat closer to the region gather of diode chip for backlight unit 3 is more, sets more heat conduction bars 8, so as to increase dissipating for the region
The thermal efficiency.
In the present embodiment, as shown in Figures 4 and 5, further, the substrate 1 includes being fitted with the diode chip for backlight unit 3
Central part 1.1 and the ring part 1.2 around the central part 1.1, the thickness of the central part 1.1 is more than the ring part
1.2 thickness, sets fluted 2.1 on the radiating piece 2, the central part 1.1 is embedded in the groove 2.1, central part 1.1
Directly it is connected with diode chip for backlight unit 3, more heats that its reception diode chip 3 is distributed, ring part 1.2 receives the center of comparing
The less heat in portion 1.1, by set thicker of central part 1.1 so that its heat-sinking capability is stronger, also causes substrate 1 and radiating piece 2
Heat-sinking capability it is more balanced.
In the present embodiment, further, bonding pad 1.3 is provided with the substrate 1, each heat conduction bar 8 is all connected to
On one side of the bonding pad 1.3, bulge-structure 1.4 is set on relative another side of the bonding pad 1.3, it is described
The caulking groove 2.2 with the phase clamping of the bulge-structure 1.4 is provided with radiating piece 2, heat conduction bar 8 transmits substantial amounts of heat to substrate 1
On, set protrusion means to lift its heat-transfer capability in the region of substrate 1 (bonding pad 1.3) of connection heat conduction bar 8.Preferably, institute
Bonding pad 1.3 is stated positioned at the marginal portion of the substrate 1, will be connected to as far as possible away from central part 1.1 and diode chip for backlight unit 3, prevented
Only heat gathers with a part, and uniform heat is distributed.
In the present embodiment, further, the bulge-structure 1.4 is to prolong towards the direction away from the diode chip for backlight unit 3
The structure stretched, is set away from diode chip for backlight unit 3, on the one hand causes bulge-structure 1.4 as far as possible away from central part 1.1, on the other hand,
Bulge-structure 1.4 turns into the structure being in tilted layout with substrate 1 away from diode chip for backlight unit 3, so as to lift the surface of bulge-structure 1.4
Product, lifts its capacity of heat transmission.
Some one exemplary embodiments of the invention only are described by way of explanation above, undoubtedly, for ability
The those of ordinary skill in domain, without departing from the spirit and scope of the present invention, can be with a variety of modes to institute
The embodiment of description is modified.Therefore, above-mentioned accompanying drawing and description are inherently illustrative, should not be construed as to the present invention
The limitation of claims.
Claims (10)
1. a kind of high radiating diode package structure, including substrate, radiating piece, diode chip for backlight unit, positive pole pin, negative pin with
And packing colloid, the diode chip for backlight unit and radiating piece be respectively and fixedly connected with the opposing sides of the substrate, the positive pole pin
Electrically connected with the diode chip for backlight unit with negative pin, the substrate, radiating piece and diode chip for backlight unit are packaged in the envelope
In dress colloid, it is characterised in that also including reflecting drum and multiple heat conduction bars, the reflecting drum is coated on packing colloid, multiple
The heat conduction bar arranges that each heat conduction bar is embedded in the packing colloid, each heat conduction around the diode chip for backlight unit
The end of bar is fixed on the substrate, and the outer wall of each heat conduction bar is reflector layer.
2. radiating diode package structure high according to claim 1, it is characterised in that the one side of the heat conduction bar is arc
Shape reflective surface, the curved reflection face is oppositely arranged with the diode chip for backlight unit.
3. radiating diode package structure high according to claim 1, it is characterised in that on the heat conduction bar from one end to
Other end radial dimension is incremented by successively, and the heat conduction bar is connected on the substrate with the larger one end of its radial dimension.
4. the radiating diode package structure high according to Claims 2 or 3, it is characterised in that the heat conduction bar includes bottom
First side and the second side with inclined bottom surface arrangement that face and the plane perpendicular are set, the second side
It is arcwall face, the heat conduction bar is oppositely arranged with the second side with the diode chip for backlight unit, the bottom surface and the substrate
Fit.
5. radiating diode package structure high according to claim 1, it is characterised in that from the outer of the diode chip for backlight unit
Wall is to the reflecting drum, and the arrangement density of the heat conduction bar diminishes successively, described to arrange that density refers to being sealed described in unit volume
The cumulative volume of the heat conduction bar in dress colloid.
6. radiating diode package structure high according to claim 1, it is characterised in that the heat conduction bar and the substrate
Incline or be arranged vertically.
7. radiating diode package structure high according to claim 1, it is characterised in that the substrate includes and described two
Central part and the ring part around the central part that pole pipe chip fits, the thickness of the central part are more than the ring part
Thickness, set fluted on the radiating piece, the central part is embedded in the groove.
8. radiating diode package structure high according to claim 1, it is characterised in that connection is provided with the substrate
Area, each heat conduction bar is all connected on a side of the bonding pad, is set on relative another side of the bonding pad
Bulge-structure is put, the caulking groove with the bulge-structure phase clamping is provided with the radiating piece.
9. radiating diode package structure high according to claim 8, it is characterised in that the bonding pad is located at the base
The marginal portion of plate.
10. radiating diode package structure high according to claim 8, it is characterised in that the bulge-structure be towards
Away from the structure that the direction of the diode chip for backlight unit extends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144653.0A CN106876567A (en) | 2017-03-13 | 2017-03-13 | Height radiating diode package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144653.0A CN106876567A (en) | 2017-03-13 | 2017-03-13 | Height radiating diode package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106876567A true CN106876567A (en) | 2017-06-20 |
Family
ID=59170165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710144653.0A Pending CN106876567A (en) | 2017-03-13 | 2017-03-13 | Height radiating diode package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106876567A (en) |
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| CN101558503A (en) * | 2006-12-19 | 2009-10-14 | 首尔半导体株式会社 | Heat conducting slug having multi-step structure and the light emitting diode package using the same |
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-
2017
- 2017-03-13 CN CN201710144653.0A patent/CN106876567A/en active Pending
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|---|---|---|---|---|
| CN101558503A (en) * | 2006-12-19 | 2009-10-14 | 首尔半导体株式会社 | Heat conducting slug having multi-step structure and the light emitting diode package using the same |
| US20110006322A1 (en) * | 2009-07-07 | 2011-01-13 | China Wafer Level Csp Ltd. | Wafer-level package structure of light emitting diode and manufacturing method thereof |
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