CN106876367B - Three-dimensional storage tests structure and preparation method thereof, test method - Google Patents
Three-dimensional storage tests structure and preparation method thereof, test method Download PDFInfo
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Abstract
The embodiment of the invention discloses a kind of three-dimensional storage test structures and preparation method thereof, test method, three-dimensional storage test structure exposes the partial region of the M layers of metal gates to the open air, to in R&D process, the test method be can use by directly utilizing the resistance of probe M layers of metal gates of test, to obtain the filling capacity of metal gates in the three-dimensional storage test structure, to compare the filling capacity of metal gates under different process, without etc. entire three-dimensional storage backend process complete after re-test metal gates filling capacity, shorten the R&D cycle, reduce research and development cost.
Description
Technical field
The present invention relates to three-dimensional storage technical field more particularly to a kind of three-dimensional storage test structure and its production sides
Method and test method.
Background technique
With the continuous development of plane memory, the production technology of semiconductor achieves huge progress.But it is close several
Nian Lai, the development of plane memory encounter various challenges: physics limit, the existing developing technique limit and storage electronics
DENSITY LIMIT etc..In this context, to solve the difficulty that encounters of plane memory and pursue lower unit storage unit
Production cost, the structure of three-dimensional storage comes into being, and the technical research of three-dimensional storage has become at present researches and develops in the world
Mainstream.
But the prior art is during researching and developing three-dimensional storage, after usually three-dimensional storage is completed again
The resistance of grid in the three-dimensional storage to be tested, the filling capacity of grid in the three-dimensional storage is judged with this, the period is longer, at
This is higher.
Summary of the invention
In order to solve the above technical problems, the embodiment of the invention provides a kind of three-dimensional storage test structure and its production sides
Method and test method shorten the R&D cycle to shorten the time for knowing grid filling capacity in the three-dimensional storage, and reduction is ground
Send out cost.
To solve the above problems, the embodiment of the invention provides following technical solutions:
A kind of three-dimensional storage test structure, comprising:
Substrate；
Positioned at the stacked structure of the substrate surface, the stacked structure includes the N along the stepped arrangement of preset direction
Layer metal gates, and the oxide layer between adjacent two layers metal gates, N are the positive integer greater than 1；
It is formed in the first area of the stacked structure and multiple channel holes of second area, wherein the second area
Positioned at the first area periphery, and the density in second area interior raceway groove hole is less than the close of first area interior raceway groove hole
Degree；
The storage organization being formed in the channel hole；
Be formed in the N layers of metal gates each layer metal gates and oxide layer above M layers of metal gates it is corresponding described in
Structure is exposed to the open air in predeterminable area in second area, and the structure that exposes to the open air exposes the M layers of metal gates partial region to the open air, and M is
Positive integer greater than zero and no more than N.
Optionally, the structure that exposes to the open air is groove or through-hole.
Optionally, the first area is storage region, and the second area is electrode connecting region domain.
Optionally, the predeterminable area is the white space in the second area between each access opening.
Optionally, the thickness of the metal gates is not less than 10nm, and is not more than 80nm.
Optionally, the channel pore structure includes: the tunnel layer for being sequentially formed in channel hole side wall, accumulation layer, resistance
Barrier and polysilicon layer.
Optionally, the metal gates include the titanium nitride metal layer and tungsten metal layer of superposition.
Optionally, the thickness of the titanium nitride metal layer not less than 1nm and is not more than 10nm；The thickness of the tungsten metal layer
Not less than 10nm and it is not more than 100nm.
A kind of production method of three-dimensional storage test structure, this method comprises:
Substrate is provided；
Stacked structure is formed in the substrate surface, the stacked structure includes the N layer oxide layer and N of intersecting setting
Layer nitration case, N are the positive integer greater than 1；
Multiple channel holes are formed in the first area of the stacked structure and second area, the second area is located at described
First area periphery, and the density in the channel hole of the first area is greater than the density in the channel hole of the second area；
Storage organization is formed in the channel hole；
The nitration case in the stacked structure is removed, groove is formed；
Metal is filled in the groove, forms the N layer metal gates along the stepped arrangement of preset direction；
It removes in the N layers of metal gates each layer metal gates and oxide layer above M layers of metal gates and is located at described the
The part of predeterminable area in two regions, exposes the M layers of metal gates partial region to the open air, and M is greater than zero and just whole no more than N
Number.
Optionally, each layer metal gates in M layers of metal gates top and oxide layer in the N layers of metal gates is removed to be located at
The part of predeterminable area in the second area, exposing the M layers of metal gates partial region to the open air includes:
Using plasma focus beam remove in the N layer metal gates M layer each layer metal gates in metal gates top with
Oxide layer is located at the part of predeterminable area in the second area, exposes the M layers of metal gates partial region to the open air.
A kind of test method of three-dimensional storage test structure, this method comprises:
The exposure plot of M layers of metal gates in three-dimensional storage test structure described in any of the above embodiments is contacted using probe
Domain；
According to the detection result of the probe, the fillibility of metal gates in the three-dimensional storage test structure is obtained
Energy.
Compared with prior art, above-mentioned technical proposal has the advantage that
Three-dimensional storage provided by the embodiment of the present invention is tested in structure and its test method, three-dimensional storage test
Structure exposes the partial region of the M layers of metal gates to the open air, to can use the test method in R&D process and pass through directly
The resistance for testing M layer metal gates using probe is connect, tests filling out for metal gates in structure to obtain the three-dimensional storage
Fill performance, to compare the filling capacity of metal gates under different process, without etc. entire three-dimensional storage backend process
The filling capacity of re-test metal gates, shortens the R&D cycle after completing, and reduces research and development cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram that three-dimensional storage provided by one embodiment of the invention tests structure；
Fig. 2 is the top view that three-dimensional storage provided by one embodiment of the invention tests structure；
Fig. 3 is the production method flow chart that three-dimensional storage provided by one embodiment of the invention tests structure；
Fig. 4 is the test method flow chart that three-dimensional storage provided by one embodiment of the invention tests structure.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
The embodiment of the invention provides a kind of test structures of three-dimensional storage, as shown in Figure 1, the test structure includes:
Substrate 1；
Positioned at the stacked structure of the substrate surface, the stacked structure includes the N along the stepped arrangement of preset direction
Layer metal gates 2, and the oxide layer 3 between adjacent two layers metal gates 2, N are the positive integer greater than 1；
As shown in Fig. 2, being formed in multiple channel holes 4 of the first area A and second area B of the stacked structure, wherein
The second area B is located at the periphery first area A, and the density in the second area B interior raceway groove hole 4 is less than described first
The density in region A interior raceway groove hole 4；
The storage organization 5 being formed in the channel hole 4；
It is formed in each layer metal gates in M layers of 21 top of metal gates and oxide layer in the N layers of metal gates 4 and corresponds to institute
It states in second area and exposes structure to the open air in predeterminable area, the structure that exposes to the open air exposes the M layers of metal gates 21 to the open air at least partly
Region, M are the positive integer greater than zero and no more than N.
Optionally, the structure that exposes to the open air is groove or through-hole, the present invention to this and without limitation, as long as being exposed to the open air described in guarantee
Structure can expose at least partly region of the M layers of metal gates to the open air.
It should be noted that in embodiments of the present invention, when the test structure is specifically used for test, M can be in 1-N
Any value, including 1 and N, can also be followed successively by any value in N-1, the present invention to this and without limitation, specifically optionally and
It is fixed.
On the basis of the above embodiments, in one embodiment of the invention, the first area is storage region, institute
Stating second area is electrode connecting region domain.Optionally, the predeterminable area is the sky in the second area between each access opening
White region.But the present invention is to this and without limitation, as long as guaranteeing that the presence of the predeterminable area does not influence the three-dimensional storage
Normal function.
Based on any of the above embodiments, in one embodiment of the invention, the thickness of the metal gates is not
Less than 10nm, and it is not more than 80nm；The thickness of institute's oxide layer be not less than 10nm, and be not more than 80nm, but the present invention to this not
It limits, specifically depends on the circumstances.Optionally, the overall thickness of the stacked structure is greater than 1 micron, but the present invention does not do this
It limits, specifically depends on the circumstances.
Based on any of the above embodiments, in one embodiment of the invention, continue as shown in Figure 1, the ditch
Road pore structure 5 includes: the tunnel layer 51 for being sequentially formed in 4 side wall of channel hole, accumulation layer 52, barrier layer 53 and polysilicon layer
54.Wherein, the tunnel layer 52 is for generating charge, and the accumulation layer 52 is for storing charge, and the barrier layer 53 is for hindering
The charge outflow in the accumulation layer is kept off, the polysilicon layer 54 is the channel design of the three-dimensional storage, is used for transmission electricity
Lotus.
Based on any of the above embodiments, in one embodiment of the invention, the metal gates include superposition
Titanium nitride metal layer and tungsten metal layer, wherein the titanium nitride metal layer be the tungsten metal layer seed layer, in order to institute
State the formation of tungsten metal layer.
On the basis of the above embodiments, in one embodiment of the invention, the thickness of the titanium nitride metal layer is not
Less than 1nm and it is not more than 10nm；The thickness of the tungsten metal layer is not less than 10nm and is not more than 100nm.But the present invention to this simultaneously
Without limitation, it specifically depends on the circumstances.
Correspondingly, the embodiment of the invention also provides a kind of production methods of three-dimensional storage test structure, such as Fig. 3 institute
Show, this method comprises:
S1: providing substrate, and optionally, the substrate is silicon wafer.
S2: stacked structure is formed in the substrate surface, the stacked structure includes the N layer oxide layer of intersecting setting
With N layers of nitration case, N is the positive integer greater than 1.
Specifically, in one embodiment of the invention, forming stacked structure in the substrate surface includes: in the base
Bottom surface alternating deposit aoxidizes layer film and nitridation layer film.
S3: multiple channel holes are formed in the first area of the stacked structure and second area, the second area is located at
The first area periphery, and the density in the channel hole of the first area is greater than the density in the channel hole of the second area.
Specifically, in one embodiment of the invention, being formed in the first area of the stacked structure and second area
Multiple channel holes include:
The part for corresponding to the first area and the second area to the stacked structure performs etching, in the stacking
Structure corresponds to the first area and the part of the second area and forms multiple channel holes through the stacked structure.
S4: storage organization is formed in the channel hole.
Specifically, in one embodiment of the invention, forming storage organization in the channel hole includes:
Tunnel layer is formed on the side wall in the channel hole；
Accumulation layer is formed away from one side surface of channel hole side wall in the tunnel layer；
Barrier layer is formed away from one side surface of tunnel layer in the accumulation layer；
Polysilicon layer is formed away from one side surface of accumulation layer and channel hole bottom on the barrier layer.
S5: removing the nitration case in the stacked structure, forms groove.
Specifically, in one embodiment of the invention, removing the nitration case in the stacked structure, groove packet is formed
It includes:
Nitration case in the stacked structure is performed etching, the nitration case in the stacked structure is removed, is formed multiple
Groove；
The groove is cleaned, optionally, carrying out cleaning to the groove includes carrying out phosphoric acid drift to the groove
It washes, wherein not less than 100 DEG C and no more than 200 DEG C, rinsing time is not less than 10 minutes the temperature of the phosphoric acid, and is not more than
100 minutes.
S6: filling metal in the groove, forms the N layer metal gates along the stepped arrangement of preset direction.
Specifically, in one embodiment of the invention, filling metal in the groove, being formed along preset direction is in rank
Scalariform arrangement N layer metal gates include:
Cvd nitride titanium coating in the groove, optionally, the thickness of the titanium nitride metal layer not less than 1nm and
No more than 10nm；
In the titanium nitride metal layer surface depositing tungsten metal layer, optionally, the thickness of the tungsten metal layer is not less than
10nm and be not more than 100nm；
The electrical connections of tungsten metal layer in adjacent trenches are removed, formation is electrically insulated from each other and stepped along preset direction
The N layer metal gates of arrangement.
S7: remove in the N layers of metal gates each layer metal gates and oxide layer above M layers of metal gates be located at it is described
The part of predeterminable area in second area, exposes the M layers of metal gates partial region to the open air, and M is greater than zero and to be not more than N just
Integer.
Specifically, in one embodiment of the invention, removing in the N layers of metal gates above M layers of metal gates
Each layer metal gates and oxide layer are located at the part of predeterminable area in the second area, expose the M layers of metal gates portion to the open air
Subregion includes:
Using plasma focus beam remove in the N layer metal gates M layer each layer metal gates in metal gates top with
Oxide layer is located at the part of predeterminable area in the second area, exposes the M layers of metal gates partial region to the open air.
It should be noted that each layer metal gates and oxygen above M layers of metal gates in removing the N layers of metal gates
Change the part that layer is located at predeterminable area in the second area, when exposing the M layers of metal gates partial region to the open air, is located at described
Each layer metal gates and oxide layer are located at predeterminable area in the second area above M layers of metal gates of stacked structure two sides
Part remove, and remove the number of plies it is identical.
In addition, the embodiment of the invention also provides a kind of test methods of three-dimensional storage test structure, as shown in figure 4,
This method comprises:
S11；M layers are contacted in three-dimensional storage test structure provided by any of the above-described embodiment of the present invention using probe
The exposed areas of metal gates；
S12；According to the detection result of the probe, the filling of metal gates in the three-dimensional storage test structure is obtained
Performance.
Optionally, in one embodiment of the invention, which passes through is surveyed using detection contact three-dimensional storage
The tungsten metal layer of the exposed areas of M layers of metal gates in structure is tried, the resistance of the M layers of metal gates is obtained, thus root
According to the resistance of the M layers of metal gates, the filling capacity of metal gates in the three-dimensional storage test structure is obtained
From the foregoing, it will be observed that in the test structure of three-dimensional storage provided by the embodiment of the present invention and its test method, the three-dimensional
Memory test structure exposes the partial region of the M layers of metal gates to the open air, to can use the test in R&D process
Method is by directly using the resistance of probe M layers of metal gates of test, testing gold in structure to obtain the three-dimensional storage
The filling capacity for belonging to grid, to compare the filling capacity of metal gates under different process, without etc. entire three-dimensional storage
Backend process complete after re-test metal gates filling capacity, shorten the R&D cycle, reduce research and development cost.
Various pieces are described in a progressive manner in this specification, and what each some importance illustrated is and other parts
Difference, same and similar part may refer to each other between various pieces.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to embodiment illustrated herein, and is to fit to consistent with the principles and novel features disclosed in this article
Widest scope.
Claims (10)
1. a kind of three-dimensional storage tests structure characterized by comprising
Substrate；
Positioned at the stacked structure of the substrate surface, the stacked structure includes the N layer gold along the stepped arrangement of preset direction
Belong to grid, and the oxide layer between adjacent two layers metal gates, N is the positive integer greater than 1, and the preset direction is vertical
In the substrate surface；
It is formed in the first area of the stacked structure and multiple channel holes of second area, wherein the second area is located at
The first area periphery, and the density in second area interior raceway groove hole is less than the density in first area interior raceway groove hole；
The storage organization being formed in the channel hole；
It is formed in each layer metal gates in M layers of metal gates top and oxide layer in the N layers of metal gates and corresponds to described second
Expose structure to the open air in predeterminable area in region, the structure that exposes to the open air exposes the M layers of metal gates partial region to the open air, M be greater than
Zero and no more than N any positive integer or be followed successively by any positive integer in N-1.
2. test structure according to claim 1, which is characterized in that the first area be storage region, described second
Region is electrode connecting region domain.
3. test structure according to claim 1, which is characterized in that the predeterminable area is each logical in the second area
White space between road hole.
4. test structure according to claim 1, which is characterized in that the thickness of the metal gates is not less than 10nm, and
No more than 80nm.
5. test structure according to claim 1, which is characterized in that the channel pore structure includes: to be sequentially formed in institute
State tunnel layer, accumulation layer, barrier layer and the polysilicon layer of channel hole side wall.
6. test structure according to claim 1, which is characterized in that the metal gates include the titanium nitride metal of superposition
Layer and tungsten metal layer.
7. test structure according to claim 6, which is characterized in that the thickness of the titanium nitride metal layer is not less than 1nm
And it is not more than 10nm；The thickness of the tungsten metal layer is not less than 10nm and is not more than 100nm.
8. a kind of production method of three-dimensional storage test structure, which is characterized in that this method comprises:
Substrate is provided；
Stacked structure is formed in the substrate surface, the stacked structure includes the N layer oxide layer and N layers of nitrogen of intersecting setting
Change layer, N is the positive integer greater than 1；
Multiple channel holes are formed in the first area of the stacked structure and second area, the second area is located at described first
Area periphery, and the density in the channel hole of the first area is greater than the density in the channel hole of the second area；
Storage organization is formed in the channel hole；
The nitration case in the stacked structure is removed, groove is formed；
Metal is filled in the groove, forms the N layer metal gates along the stepped arrangement of preset direction, the preset direction
Perpendicular to the substrate surface；
It removes each floor metal gates in M floor metal gates top and oxide layer in the N floor metal gates and is located at secondth area
The part of predeterminable area in domain, exposes the M layers of metal gates partial region to the open air, and M is greater than zero and any just whole no more than N
Number is followed successively by any positive integer in N-1.
9. production method according to claim 8, which is characterized in that remove M layers of metal gate in the N layers of metal gates
Each layer metal gates and oxide layer are located at the part of predeterminable area in the second area above pole, expose the M layers of metal to the open air
Grid part region includes:
Each layer metal gates and oxidation above M layers of metal gates in the N layers of metal gates are removed using plasma focus beam
Layer is located at the part of predeterminable area in the second area, exposes the M layers of metal gates partial region to the open air.
10. a kind of test method of three-dimensional storage test structure, which is characterized in that this method comprises:
Utilize the exposure of M layers of metal gates in the described in any item three-dimensional storage test structures of probe contact claim 1-7
Reveal region；
According to the detection result of the probe, the filling capacity of metal gates in the three-dimensional storage test structure is obtained.
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| CN107946202B (en) * | 2017-11-16 | 2018-12-14 | 长江存储科技有限责任公司 | The three-dimensional storage electric test method and test structure of short process stage |
| CN107993949A (en) * | 2017-11-16 | 2018-05-04 | 长江存储科技有限责任公司 | The test method of three-dimensional storage bit line capacitance |
| CN108493189B (en) * | 2018-03-22 | 2019-03-01 | 长江存储科技有限责任公司 | 3D NAND detection structure and forming method thereof |
| CN110379814B (en) * | 2019-06-19 | 2020-06-09 | 长江存储科技有限责任公司 | Three-dimensional memory device and manufacturing method thereof |
| CN112885842B (en) * | 2021-03-22 | 2023-04-07 | 长江存储科技有限责任公司 | Three-dimensional memory and preparation method thereof |
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