CN106876354A - Bump structure and manufacturing method thereof - Google Patents
Bump structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN106876354A CN106876354A CN201610104586.5A CN201610104586A CN106876354A CN 106876354 A CN106876354 A CN 106876354A CN 201610104586 A CN201610104586 A CN 201610104586A CN 106876354 A CN106876354 A CN 106876354A
- Authority
- CN
- China
- Prior art keywords
- projection
- cube structure
- particle filler
- micro
- multiple micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 239000000945 filler Substances 0.000 claims abstract description 63
- 239000011859 microparticle Substances 0.000 claims abstract description 58
- 238000007747 plating Methods 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 19
- 238000002360 preparation method Methods 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 7
- 229910001431 copper ion Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011469 building brick Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 229910010092 LiAlO2 Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000012263 liquid product Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
Landscapes
- Engineering & Computer Science (AREA)
- Electroplating Methods And Accessories (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Chemical Kinetics & Catalysis (AREA)
Abstract
The invention provides a bump structure and a manufacturing method thereof. The bump structure includes a bump body and a plurality of micro-particle fillers. The particle filler is distributed in the bump body, wherein the diameter of the particle filler is between 0.05 and 1 micron, and the proportion of the particle filler distributed in the bump body is between 25 and 50 percent. The manufacturing method of the bump structure comprises the following steps: a plurality of particulate fillers are doped into the electroplating solution. The bump body is formed on the plating piece by electroplating solution, and the microparticle filler is mixed into the bump body, wherein the diameter of the microparticle filler is between 0.05 and 1 micron, and the proportion of the microparticle filler distributed in the bump body is between 25 and 50 percent. The lug structure and the manufacturing method thereof are suitable for increasing the hardness of the lug structure, thereby improving the strength and the bonding effect of the lug structure and simultaneously reducing the production cost.
Description
Technical field
The present invention relates to a kind of projection cube structure and its preparation method.
Background technology
In recent years, as the demand of electronic product is towards multifunction, signal transmission high speed and circuit group
Part densification, the technology also continuous evolution of semiconductor related industry.In general, semiconductor crystal wafer exists
Complete integrated circuit (integrated circuit) making after, need to by conductive structure (such as projection,
Wire) the outer contact and other assemblies (such as substrate, printed circuit board (PCB)) of integrated circuit are electrically connected with,
Electrical signals can be transmitted.
By taking plated bumps structure as an example, its application is common in thin membrane flip chip encapsulation (Chip on Film, COF)
Or glass flip chip (Chip on Glass, COG).In general, projection cube structure is straight by electroplating process
Connect on the surface for being made in semiconductor crystal wafer, then after semiconductor crystal wafer list is divided into single chip, by
The projection cube structure being formed on chip makes chip be electrically connected with flexible base plate (i.e. film substrate) or glass base
Conductive pattern (e.g. pin or conductive junction point) on plate.Projection cube structure can lead to conductive pattern
Cross directly pressing and form bond, or utilize conducting resinl (such as anisotropic conductive) to reach and electrically connect
Connect.When projection cube structure hardness is inadequate, i.e., easily produced because of stress during being pressure bonded to conductive pattern
Raw destruction is caved in, so as to reduce the intensity and splicing results of projection cube structure.If in addition, higher with price
Precious metal material (such as gold) make whole projection cube structure, will make the production cost of projection cube structure cannot
Effectively reduce.
The content of the invention
The present invention provides a kind of projection cube structure and its preparation method, and it is suitable to increase projection cube structure hardness,
So as to improve the intensity and splicing results of projection cube structure, and production cost is reduced simultaneously.
Projection cube structure of the invention includes projection body and multiple micro-particle fillers.Micro-particle filler is distributed
In projection body, wherein the diameter of micro-particle filler is between 0.05 micron to 1 micron, and particulate
Ratio of the sub- filler distribution in projection body is between 25% to 50%.
The preparation method of projection cube structure of the invention comprises the following steps：Multiple micro-particle fillers are doped in
In electroplate liquid.Projection body is formed on plating piece by electroplate liquid, and micro-particle filler is mixed into the projection sheet
In body, the wherein diameter of micro-particle filler is between 0.05 micron to 1 micron, and micro-particle filler point
The ratio in projection body is distributed between 25% to 50%.
In one embodiment of this invention, above-mentioned micro-particle filler is by being mixed into for forming projection body
Electroplate liquid in and with electroplate liquid simultaneously be formed in projection body.
In one embodiment of this invention, above-mentioned micro-particle filler includes silicon substrate (Silicon based) material
Material.
In one embodiment of this invention, the material of above-mentioned projection body includes gold, silver or copper.
In one embodiment of this invention, the ratio that above-mentioned micro-particle filler is distributed in projection body is situated between
Between 30% to 45%.
In one embodiment of this invention, the multiple ion storehouse sedimentary composition projections in above-mentioned electroplate liquid
Body, micro-particle filler is doped between ion, and projection body is mixed into in ion storehouse.
In one embodiment of this invention, above-mentioned electroplate liquid includes the material containing gold, silver or copper ion,
And ion includes gold, silver or copper ion.
In one embodiment of this invention, it is above-mentioned include the step of form projection body by electroplate liquid it is equal
Even stirring electroplate liquid, makes micro-particle filler be suspended in electroplate liquid.
Based on above-mentioned, multiple micro-particle fillers are doped in electricity by projection cube structure of the invention with its preparation method
In plating solution, and projection body is formed by electroplate liquid, micro-particle filler is mixed into projection body.In this way,
Projection cube structure includes projection body and is distributed in micro-particle filler therein, and wherein micro-particle filler is straight
Footpath between 0.05 micron to 1 micron, and micro-particle filler be distributed in ratio in projection body between
Between 25% to 50%.Accordingly, projection cube structure of the invention is suitable to make projection cube structure hard with its preparation method
Degree increase, so as to improve the intensity and splicing results of projection cube structure, and reduces production cost simultaneously.
It is that features described above of the invention and advantage can be become apparent, special embodiment below, and coordinate
Accompanying drawing is described in detail below.
Brief description of the drawings
Fig. 1 is the schematic diagram of the projection cube structure of one embodiment of the invention；
Fig. 2 is the Making programme schematic diagram of the projection cube structure of Fig. 1.
Reference：
10：Carrier
20：Electroplanting device
22：Electroplate liquid
24：Plating piece
24a：Specific region
24b：Barrier structure
26：Negative electrode
28：Anode
100：Projection cube structure
110：Projection body
120：Micro-particle filler
d：Diameter
h：Highly
V：Power supply unit
w：Width
Specific embodiment
Fig. 1 is the schematic diagram of the projection cube structure of one embodiment of the invention.Fig. 1 is refer to, in the present embodiment
In, projection cube structure 100 includes projection body 110 and multiple micro-particle fillers 120.Micro-particle filler
120 are distributed in projection body 110, and wherein the diameter d of micro-particle filler 120 is between 0.05 micron
(micrometer, μm) is between 1 micron, and micro-particle filler 120 is distributed in projection body 110
In ratio between 25% to 50%.Specifically, the projection cube structure 100 can be produced on half
On semiconductor wafer or other applicable carriers 10, as the carrier 10 and other electronic building bricks (such as
Circuit board or other applicable electronic building bricks) between be electrically connected with conductive structure.Wherein, it is common convex
Block structure is constituted by the ion storehouse deposition in electroplate liquid in electroplating process.Relatively, this reality
The projection cube structure 100 of example is applied also in manufacturing process in the micro-particle filler 120 that adulterated on projection body 110,
To improve the hardness of projection cube structure 100.
Fig. 2 is the Making programme schematic diagram of the projection cube structure of Fig. 1.Fig. 1 and Fig. 2 is refer to, in this reality
Apply in example, the preparation method of projection cube structure 100 comprises the following steps.First, in (the example of electroplanting device 20
Electroplating bath in this way) in be put into electroplate liquid 22, and multiple micro-particle fillers 120 are doped in electroplate liquid 22
In.Then, projection body 110 is formed on plating piece 24 by electroplate liquid 22, and micro-particle filler 120
It is mixed into projection body 110.That is, described micro-particle filler 120 is by being mixed into for forming projection body
It is formed in projection body 110 simultaneously with electroplate liquid 22 in 110 electroplate liquid 22.
Specifically, in the present embodiment, the electroplate liquid 22 includes the material containing gold, silver or copper ion
Matter, e.g. potassium auricyanide (KAu (CN)2), silver potassium cyanide (KAg (CN)2) or copper sulphate (CuSO4),
And ion includes gold, silver or copper ion, but the present invention is not limited system.Furthermore, the particulate is filled out
Material 120 includes silicon substrate (Silicon based) material, e.g. silica (SiO2), also can be oxygen
Change aluminium (Al2O3), barium titanate (BaTiO3), titanium dioxide (TiO2), zirconium dioxide (ZrO2)、
Magnesia (MgO), lithium aluminate (LiAlO2), magnesium aluminate (MgAl2O4) or other are applicable
Oxide material, the present invention does not limit the material of micro-particle filler 120, and it can be adjusted according to demand.Separately
Outward, the plating piece 24 is, for example, foregoing semiconductor crystal wafer or other applicable carriers 10 (being shown in Fig. 1),
And projection body 110 is formed on plating piece 24 (i.e. carrier 10) in this preparation method.Wherein, projection
Body 110 may be formed at as the specific region 24a of the semiconductor crystal wafer of plating piece 24, and the given zone
Domain 24a can be separated by the barrier structure 24b (e.g. patterning photoresistance) on plating piece 24 and
Into, i.e., projection body 110 is formed in barrier structure 24b and surround in the specific region 24a for constituting, but
The present invention is not limited system.
Furthermore, plating piece 24 is normally fixed in work support (not shown), and then leaching is placed in containing plating
In the electroplating bath of liquid 22.Power supply unit V is electrically connected to the work support of fixed plating piece 24, and carries
Exported to work support for negative pole and constitute negative electrode 26.Anode 28 is additionally provided with electroplanting device 20, electricity
Source supply V then provides positive pole and exports to anode 28.In electroplating process, power supply unit V applies electricity
Pressure, causes electric charge to flow to plating piece 24 (i.e. negative electrode 26) from anode 28.Electric charge stream movable property life electrochemistry is anti-
Answering (i.e. redox reaction) makes the multiple ions (i.e. foregoing gold, silver or copper ion) in electroplate liquid 22
Storehouse is deposited on plating piece 24 and constitutes projection body 110.In other words, by electroplating process, electroplate liquid
Multiple ions in 22 are moved by redox reaction towards the plating piece 24 for being located at negative electrode 26, and storehouse
Sedimentary composition projection body 110, and micro-particle filler 120 is doped between the ion simultaneously, with
Projection body 110 is mixed into during ion storehouse.Wherein, the step of projection body 110 is formed by electroplate liquid 22
Suddenly include uniform stirring electroplate liquid 22, micro-particle filler 120 is relatively evenly suspended in electroplate liquid 22.
This measure contributes to micro-particle filler 120 to be uniformly distributed in projection body 110.
Fig. 1 is refer to, in the present embodiment, projection cube structure 100 is formed at load by above-mentioned preparation method
Body 10 (i.e. foregoing plating piece 24), the wherein material of projection body 110 include gold, silver or copper, projection sheet
The height h of body 110 is about between 12 microns to 15 microns, and width w be about 10 microns to 15 it is micro-
Between rice, but the present invention is not limited system.Wherein, the diameter d of micro-particle filler 120 is between 0.05
Micron is between 1 micron, and micro-particle filler 120 is distributed in ratio in projection body 110 between 25
Between % to 50%.It is preferred that micro-particle filler 120 be distributed in ratio in projection body 110 between
Between 30% to 45%.The ratio that micro-particle filler 120 is distributed in projection body 110 is adjusted in upper
In the range of stating, help to make the hardness of projection cube structure 100 get a promotion, but do not influence projection cube structure 100
Electric conductivity.However, the present invention is not intended to limit aforementioned proportion, it can be adjusted according to demand.
It follows that in the present embodiment, the micro-particle filler 120 is mixed into projection in electroplating process
In body 110 so that projection cube structure 100 is by the projection of metal material (e.g. gold, silver or copper)
The particulate of collocation non-metallic material of body 110 (e.g. silica-base material or other oxide materials) is filled out
Material 120 is constituted, i.e., projection cube structure 100 is composite, therefore projection cube structure 100 is compared to common
Projection cube structure has hardness higher.By above-mentioned design, pass through when as the semiconductor crystal wafer of carrier 10
It is convex when projection cube structure 100 is electrically connected to other electronic building brick (such as circuit boards) as conductive structure
Block structure 100 can be pressure bonded to the conductive pattern (example of electronic building brick by conducting resinl or other applicable modes
Such as conductive junction point or pin) on.Now, because projection cube structure 100 has high rigidity, it is difficult in pressure
Destroyed during conjunction or caved in, and there is good electric connection effect.Also, compared to gold
Or for other precious metal materials make whole projection cube structure, projection cube structure 100 by metal material projection
The micro-particle filler 120 of the collocation non-metallic material of body 110 is constituted so that in projection cube structure 100
The reduction of metal material ratio, and then effectively reduce production cost.Accordingly, projection cube structure 100 makes with it
Method is suitable to increase the hardness of projection cube structure 100, so that the intensity and splicing results of projection cube structure are improved,
And production cost is reduced simultaneously.
In sum, multiple micro-particle fillers are doped in electricity by projection cube structure of the invention with its preparation method
In plating solution, and projection body is formed by electroplate liquid, micro-particle filler is sunk in the ion storehouse of electroplate liquid
Product is mixed into projection body during constituting projection body.In this way, projection cube structure include projection body with
And micro-particle filler therein is distributed in, wherein the diameter of micro-particle filler is between 0.05 micron to 1 micron
Between, and micro-particle filler is distributed in ratio in projection body between 25% to 50%.Accordingly,
Projection cube structure of the invention is suitable to increase projection cube structure hardness with its preparation method, so as to improve projection knot
The intensity and splicing results of structure, and production cost is reduced simultaneously.
Although the present invention is disclosed as above with embodiment, so it is not limited to the present invention, any affiliated
Those of ordinary skill in technical field, it is without departing from the spirit and scope of the present invention, a little when that can make
Change and retouch, therefore protection scope of the present invention ought be defined depending on appended claims confining spectrum.
Claims (10)
1. a kind of projection cube structure, it is characterised in that including：
Projection body；And
Multiple micro-particle fillers, are distributed in the projection body, wherein the multiple micro-particle filler
Diameter is between 0.05 micron to 1 micron, and the multiple micro-particle filler is distributed in the projection sheet
Ratio in body is between 25% to 50%.
2. projection cube structure according to claim 1, it is characterised in that the multiple micro-particle filler
By be mixed into for form the projection body electroplate liquid in and with the electroplate liquid while being formed at institute
In stating projection body.
3. projection cube structure according to claim 1, it is characterised in that the multiple micro-particle filler
Including silica-base material.
4. projection cube structure according to claim 1, it is characterised in that the material of the projection body
Including gold, silver or copper.
5. projection cube structure according to claim 1, it is characterised in that the multiple micro-particle filler
The ratio in the projection body is distributed between 30% to 45%.
6. a kind of preparation method of projection cube structure, it is characterised in that including：
Multiple micro-particle fillers are doped in electroplate liquid；And
Projection body is formed on plating piece by the electroplate liquid, and the multiple micro-particle filler is mixed into institute
In stating projection body, wherein the diameter of the multiple micro-particle filler is between 0.05 micron to 1 micron,
And the multiple micro-particle filler is distributed in ratio in the projection body between 25% to 50%.
7. the preparation method of projection cube structure according to claim 6, it is characterised in that the multiple
Micro-particle filler includes silica-base material.
8. the preparation method of projection cube structure according to claim 6, it is characterised in that the plating
Projection body described in multiple ion storehouse sedimentary compositions in liquid, the multiple micro-particle filler is doped in institute
State between multiple ions, to be mixed into the projection body in the multiple ion storehouse.
9. the preparation method of projection cube structure according to claim 8, it is characterised in that the plating
Liquid includes the material containing gold, silver or copper ion, and the multiple ion includes gold, silver or copper ion.
10. the preparation method of projection cube structure according to claim 8, it is characterised in that by institute
Stating includes electroplate liquid described in uniform stirring the step of electroplate liquid forms the projection body, make the multiple micro-
Particle filler is suspended in the electroplate liquid.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104141574 | 2015-12-10 | ||
| TW104141574A TWI621132B (en) | 2015-12-10 | 2015-12-10 | Bump structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106876354A true CN106876354A (en) | 2017-06-20 |
Family
ID=59239439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610104586.5A Pending CN106876354A (en) | 2015-12-10 | 2016-02-25 | Bump structure and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106876354A (en) |
| TW (1) | TWI621132B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320961A (en) * | 2000-03-31 | 2001-11-07 | 索尼化学株式会社 | Anisotropic electrically conductive binding material and connecting method |
| US6359337B1 (en) * | 1997-07-22 | 2002-03-19 | Dytak Corporation | Composite electrical contact structure and method for manufacturing the same |
| JP2005108871A (en) * | 2003-09-26 | 2005-04-21 | Sekisui Chem Co Ltd | Metal bump, its forming method, semiconductor chip, and conductive connection structure |
| CN101076884A (en) * | 2004-11-25 | 2007-11-21 | 日本电气株式会社 | Semiconductor device and production method therefor, wiring board and production method therefor, semiconductor package and electronic apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060280912A1 (en) * | 2005-06-13 | 2006-12-14 | Rong-Chang Liang | Non-random array anisotropic conductive film (ACF) and manufacturing processes |
| KR100882735B1 (en) * | 2007-03-19 | 2009-02-06 | 도레이새한 주식회사 | Anisotropic Conductive Film and Adhesion Method Thereof |
| WO2014117409A1 (en) * | 2013-02-04 | 2014-08-07 | 深圳首创光伏有限公司 | Electrically conductive paste for positive electrode of crystalline silicon solar cell and preparation method thereof |
-
2015
- 2015-12-10 TW TW104141574A patent/TWI621132B/en active
-
2016
- 2016-02-25 CN CN201610104586.5A patent/CN106876354A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6359337B1 (en) * | 1997-07-22 | 2002-03-19 | Dytak Corporation | Composite electrical contact structure and method for manufacturing the same |
| CN1320961A (en) * | 2000-03-31 | 2001-11-07 | 索尼化学株式会社 | Anisotropic electrically conductive binding material and connecting method |
| JP2005108871A (en) * | 2003-09-26 | 2005-04-21 | Sekisui Chem Co Ltd | Metal bump, its forming method, semiconductor chip, and conductive connection structure |
| CN101076884A (en) * | 2004-11-25 | 2007-11-21 | 日本电气株式会社 | Semiconductor device and production method therefor, wiring board and production method therefor, semiconductor package and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201721656A (en) | 2017-06-16 |
| TWI621132B (en) | 2018-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20180019385A1 (en) | Led flip chip die-bond conductive adhesive structure and mounting method thereof | |
| CN101630668B (en) | Compound semiconductor element, packaging structure of optoelectronic element and manufacturing method of optoelectronic element | |
| CN102386104B (en) | Quadrilateral flat pin-free encapsulation method | |
| JP2009010204A (en) | Light emitting device | |
| TW200905907A (en) | Package structure of compound semiconductor device and fabrication method thereof | |
| CN106233459A (en) | Semiconductor device | |
| CN106057750A (en) | Packaging structure with low warpage | |
| CN109585488A (en) | LED display base plate and preparation method thereof, display device | |
| TW200814275A (en) | Chip carrier with a signal collection tape and manufacturing method thereof | |
| CN101442040B (en) | Encapsulation structure for LED and method of manufacturing the same | |
| CN106876353B (en) | bump structure and manufacturing method thereof | |
| CN105489504B (en) | A kind of production method of package substrate | |
| CN106876354A (en) | Bump structure and manufacturing method thereof | |
| CN102593068A (en) | Oblique-conic-shaped bump structure | |
| JP2008205265A (en) | Electronic-component mounting substrate | |
| CN108666300A (en) | Chip-packaging structure and its manufacturing method | |
| JPWO2011138949A1 (en) | Device mounting substrate and manufacturing method thereof | |
| CN215680689U (en) | Micro LED packaging structure | |
| CN103441116A (en) | Semiconductor package piece and manufacturing method thereof | |
| CN206907754U (en) | A kind of IC package support plate | |
| KR20110131018A (en) | Conductive particle for anisotropic conductive film and anisotropic conductive film including the conductive particle | |
| WO2013141322A1 (en) | Method for manufacturing substrate for light-emitting element, substrate for light-emitting element, and light-emitting device | |
| US20140027169A1 (en) | Anisotropic conductive film | |
| CN204614772U (en) | Novel Fingerprint Lock encapsulating structure | |
| TWI254466B (en) | Substrate structure of LED module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170620 |