CN102593068A - Oblique-conic-shaped bump structure - Google Patents
Oblique-conic-shaped bump structure Download PDFInfo
- Publication number
- CN102593068A CN102593068A CN2011100096250A CN201110009625A CN102593068A CN 102593068 A CN102593068 A CN 102593068A CN 2011100096250 A CN2011100096250 A CN 2011100096250A CN 201110009625 A CN201110009625 A CN 201110009625A CN 102593068 A CN102593068 A CN 102593068A
- Authority
- CN
- China
- Prior art keywords
- cone shape
- oblique cone
- cube structure
- oblique
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to an oblique-conic-shaped bump structure, which is arranged on a carrier. The carrier is provided with a plurality of bonding pads and a protection layer, the protection layer is provided with a plurality of openings, and the bonding pads are exposed out of the openings. The oblique-conic-shaped bump structure comprises a conducting block and an oblique-conic-shaped insulation layer, the conducting block is arranged on the bonding pads of the carrier, the side of the conducting block is coated with the oblique-conic-shaped insulation layer, the oblique-conic-shaped insulation layer is provided with a bottom close to the carrier and a top positioned above the bottom, and the external diameter of the oblique-conic-shaped insulation layer tapers from the bottom to the top. When the carrier is pressed on a substrate and an anisotropic conductive adhesive arranged on the substrate, the oblique-conic-shaped bump structure can be inserted into the anisotropic conductive adhesive quickly so as to improve the flow efficiency of the anisotropic conductive adhesive, avoid short circuit of adjacent bumps, and improve yield of sealing technologies.
Description
Technical field
The invention relates to a kind of oblique cone shape projection cube structure, particularly relevant for a kind of in the pressing packaging technology, can increase anisotropic conductive flow efficiency and can avoiding and cause the adjacent projections short circuit to improve the oblique cone shape projection cube structure of packaging technology yield.
Background technology
Electronic product must cooperate many-sided requirements such as high speed processingization, multifunction, productive setization, small-sized weightization and low priceization, and also therefore the integrated circuit encapsulation technology also and then develops towards microminiaturized, densification.The encapsulation technology of normal utilization comprise the encapsulation of ball lattice array type (Ball Grid Array, BGA), chip size packages (Chip-Scale Package, CSP), chip package (Flip Chip, F/C), multi-chip module (Multi-Chip Module, MCM) etc.
See also Fig. 1;, a plurality of weld pads 11 (bonding pad) of a chip 10 are disposed at an active surface 12 (active surface) of this chip 10, and are respectively forming a plurality of projections 20 (bump) on this weld pad 11 mainly with the arrangement mode of face array (area array) in existing convention chip package technology; Then; Again with these chip 10 turn-overs (flip), and utilize above-mentioned projection 20 respectively electrically (electrically) and machinery (mechanically) be connected to a plurality of connection gaskets 31 (mounting pad) on the substrate 30 (like glass substrate, pottery magnetics substrate or printed circuit board (PCB)), in the crystal covered package technology of existing convention, can an anisotropic conductive (ACF) 40 be arranged at this base and pull on 30; See also Fig. 2, Fig. 3; In the chip package process, above-mentioned projection 20 can contact also push this anisotropic conductive 40, make this anisotropic conductive 40 by these projection 20 belows respectively toward these projection 20 flows outside respectively; And be filled between this chip 10 and this substrate 30; But because this anisotropic conductive 40 is made up of colloid 41 and 42 of a plurality of conducting particless, therefore when this anisotropic conductive 40 during by past respectively these projection 20 flows outside in these projection 20 belows respectively, above-mentioned conducting particles 42 can accumulate in adjacent respectively between this projection 20; Therefore cause above-mentioned adjacent projection 20 short circuits easily, thereby influence the packaging technology yield.
This shows that above-mentioned existing technology obviously still has inconvenience and defective, and demands urgently further improving in structure and use.Therefore how to found a kind of oblique cone shape projection cube structure of new structure, also becoming the current industry utmost point needs improved target.
Summary of the invention
The objective of the invention is to; Overcome the defective that existing technology exists; And a kind of oblique cone shape projection cube structure of new structure is provided; Technical problem to be solved is that its this oblique cone shape projection cube structure can be embedded in this anisotropic conductive fast, can increase the flow efficiency of this anisotropic conductive, is very suitable for practicality.
Another object of the present invention is to; A kind of oblique cone shape projection cube structure of new structure is provided; Technical problem to be solved is to make it can avoid above-mentioned conducting particles to electrically connect respectively this oblique cone shape projection cube structure and cause short circuit, improving the packaging technology yield, thereby is suitable for practicality more.
The object of the invention and solve its technical problem and adopt following technical scheme to realize.According to a kind of oblique cone shape projection cube structure that the present invention proposes, it is arranged on the carrier, and this carrier has a plurality of weld pads and a protective layer; This protective layer has a plurality of openings; And above-mentioned opening manifests above-mentioned weld pad, and this oblique cone shape projection cube structure and this weld pad electrically connect, and it includes: a conducting block; It has a side and an end face, and this conducting block is arranged on this weld pad of this carrier; And an oblique cone shape insulating barrier, it is coated on this side of this conducting block, and this oblique cone shape insulating barrier has the top of bottom and above this bottom of contiguous this carrier, and wherein the external diameter of this oblique cone shape insulating barrier is dwindled to this top by this bottom gradually.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
Aforesaid oblique cone shape projection cube structure; Wherein said this conducting block includes a conductive body and a projection lower metal layer; This conducting block electrically connects with this projection lower metal layer and this weld pad; This projection lower metal layer has one first ring wall, and this oblique cone shape insulating barrier coats this first ring wall of this projection lower metal layer.
Aforesaid oblique cone shape projection cube structure, wherein said this conducting block includes a conductive layer in addition, and this conductive body is between this projection lower metal layer and this conductive layer.
Aforesaid oblique cone shape projection cube structure, wherein said this conductive layer has one second ring wall, and this oblique cone shape insulating barrier coats this second ring wall of this conductive layer.
Aforesaid oblique cone shape projection cube structure, the material of wherein said this conductive body are copper.
Aforesaid oblique cone shape projection cube structure, wherein said this conductive layer have a nickel dam and a gold medal layer, this nickel dam this conductive body and should the gold layer between.
Aforesaid oblique cone shape projection cube structure, wherein said this oblique cone shape insulating barrier manifests this gold layer.
Aforesaid oblique cone shape projection cube structure, wherein said this oblique cone shape insulating barrier comprises an oxide layer and a nitration case, and this oxide layer is between this conducting block and this nitration case.
The present invention compared with prior art has tangible advantage and beneficial effect.Know by above,, the invention provides a kind of oblique cone shape projection cube structure for achieving the above object; It is arranged on the carrier; This oblique cone shape projection cube structure includes a conducting block and an oblique cone shape insulating barrier, and this conducting block is arranged on the weld pad of this carrier, and this oblique cone shape insulating barrier is coated on a side of this conducting block; This oblique cone shape insulating barrier has the top of bottom and above this bottom of contiguous this carrier; The external diameter of this oblique cone shape insulating barrier is dwindled to this top by this bottom gradually, when this carrier is pressed on a substrate and and is arranged at the anisotropic conductive on this substrate, because the external diameter of this oblique cone shape insulating barrier is dwindled to this top by this bottom gradually; Therefore make this oblique cone shape projection cube structure can embed fast in this anisotropic conductive, can increase the flow efficiency of this anisotropic conductive.Another purpose is to provide a kind of oblique cone shape projection cube structure; When this carrier is pressed on this substrate and this anisotropic conductive; Can cause this anisotropic conductive by this oblique cone shape projection cube structure extruding; And make a plurality of conducting particless in this anisotropic conductive accumulate between this adjacent oblique cone shape projection cube structure; But because this insulating barrier is coated on this side of this conducting block, therefore can avoids above-mentioned conducting particles to electrically connect respectively this oblique cone shape projection cube structure and cause short circuit, to improve the packaging technology yield.
By technique scheme; Oblique cone shape projection cube structure of the present invention has advantage and beneficial effect at least: when this carrier is pressed on a substrate and and is arranged at the anisotropic conductive on this substrate; Because the external diameter of this oblique cone shape insulating barrier is dwindled to this top by this bottom gradually; Therefore make this oblique cone shape projection cube structure can embed fast in this anisotropic conductive, can increase the flow efficiency of this anisotropic conductive.
When this carrier is pressed on this substrate and this anisotropic conductive; Can cause this anisotropic conductive by this oblique cone shape projection cube structure extruding; And make a plurality of conducting particless in this anisotropic conductive accumulate between this adjacent oblique cone shape projection cube structure; But because this insulating barrier is coated on this side of this conducting block, therefore can avoids above-mentioned conducting particles to electrically connect respectively this oblique cone shape projection cube structure and cause short circuit, to improve the packaging technology yield.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let above and other objects of the present invention, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Fig. 1: existing convention chip package technology with the sketch map before a chip and the substrates.
Fig. 2: this chip of existing convention chip package technology presses the anisotropic conductive sketch map on this substrate.
Fig. 3: this chip join of existing convention chip package technology is in the sketch map of this substrate.
Fig. 4: according to a preferred embodiment of the present invention, a kind of cutaway view of oblique cone shape projection cube structure.
Fig. 5: according to another preferred embodiment of the present invention, a kind of cutaway view of oblique cone shape projection cube structure.
Fig. 6: according to another preferred embodiment of the present invention, a kind of cutaway view of oblique cone shape projection cube structure.
Fig. 7: according to another preferred embodiment of the present invention, a kind of cutaway view of oblique cone shape projection cube structure.
Fig. 8 A to Fig. 8 E: according to a preferred embodiment of the present invention, a kind of sketch map of oblique cone shape projection cube structure technology.
Fig. 9 A to Fig. 9 C: according to a preferred embodiment of the present invention, one be provided with an oblique cone shape projection cube structure carrier be engaged in the schematic flow sheet of a substrate.
10: chip 11: weld pad
12: active surface
20: projection
30: substrate 31: connection gasket
40: anisotropic conductive 41: colloid
42: conducting particles
100: the oblique cone shape projection cube structure
110: conducting block 110a: conductive body
110b: projection lower metal layer 110c: conductive layer
110d: the first ring wall 110e: second ring wall
110f: the 3rd ring wall 110g: nickel dam
110h: gold layer
111: side 112: end face
120: the oblique cone shape insulating barrier
120a: insulating barrier
121: bottom 122: top
200: carrier 210: weld pad
220: protective layer 221: opening
300: substrate 310: connection gasket
400: anisotropic conductive
410: colloid 420: conducting particles
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To its embodiment of oblique cone shape projection cube structure, structure, characteristic and the effect thereof that proposes according to the present invention, specify as after.
See also Fig. 4; It is arranged on the carrier 200 for a kind of oblique cone shape projection cube structure of the present invention 100 for it; This carrier 200 has a plurality of weld pads 210 and a protective layer 220; This protective layer has a plurality of openings 221, and above-mentioned opening 221 manifests above-mentioned weld pad 210, this oblique cone shape projection cube structure 100 and these weld pad 210 electric connections; This oblique cone shape projection cube structure 100 includes a conducting block 110 and an oblique cone shape insulating barrier 120 at least; This conducting block 110 has a side 111 and an end face 112, and this conducting block 110 is arranged on this weld pad 210 of this carrier 200, and this oblique cone shape insulating barrier 120 is coated on this side 111 of this conducting block 110; This oblique cone shape insulating barrier 120 has the top 122 of bottom 121 and above this bottom 121 of contiguous this carrier 200, and wherein the external diameter of this oblique cone shape insulating barrier 120 is dwindled to this top 122 by this bottom 121 gradually.In the present embodiment, this conducting block 110 includes a conductive body 110a, a projection lower metal layer 110b and a conductive layer 110c, and this conductive body 110a is between this projection lower metal layer 110b and this conductive layer 110c; The material of this conductive body 110a is a copper, and this conducting block 110 electrically connects with this projection lower metal layer 110B and this weld pad 210, and this conductive body 110a has one first ring wall 110d; This projection lower metal layer 110b has one second ring wall 110e, and this conductive layer 110c has one the 3rd ring wall 110f, in the present embodiment; This first ring wall 110d, this second ring wall 110e and the 3rd ring wall 110f form this side 111 of this conducting block 110, perhaps, and in another embodiment; This side 111 only is made up of this first ring wall 110d and this second ring wall 110e, perhaps, and in another embodiment; This side 111 is merely this first ring wall 110d, and in the present embodiment, this oblique cone shape insulating barrier 120 coats this first ring wall 110d of this conductive body 110a and this second ring wall 110e of this projection lower metal layer 110b at least; This conductive layer 110c comprises a nickel dam 110g and a gold medal layer 110h, this nickel dam 110g this conductive body 110a and should gold layer 110h between, see also Fig. 5; In another embodiment, this oblique cone shape insulating barrier 120 manifests this gold layer 110h, sees also Fig. 6; In another embodiment; This oblique cone shape insulating barrier 120 comprises an oxide layer 123 and a nitration case 124, and this oxide layer 123 sees also Fig. 7 between this conducting block 110 and this nitration case 124; In another embodiment, this oxide layer 123 and this nitration case 124 manifest this gold layer 110h.
See also Fig. 8 A to Fig. 8 E, it is the technology of a kind of oblique cone shape projection cube structure 100 of the present invention, at first; See also Fig. 8 A, a carrier 200 is provided, this carrier 200 can be carriers such as silicon substrate, glass substrate, pottery magnetics substrate; In the present embodiment, this carrier 200 has a plurality of weld pads 210 and a protective layer 220, and this protective layer has a plurality of openings 221; And above-mentioned opening 221 manifests above-mentioned weld pad 210, and the material of above-mentioned weld pad 210 can be aluminium.Then, see also Fig. 8 B, on above-mentioned weld pad 221, can be formed with a projection lower metal layer 110b (UBM; Under Bump Metallurgy), this projection lower metal layer 110b has one second ring wall 110e, on this projection lower metal layer 110b, is formed with a conductive body 110a; This conductive body 110a has one first ring wall 110d, and in the present embodiment, the material of this conductive body 110a is a copper; Preferably, on this conductive body 110a, can be formed with a conductive layer 110c, this conductive layer 110c has one the 3rd ring wall 110f; This conductive layer 110c comprises a nickel dam 110g and a gold medal layer 110h, and this conductive body 110a, this projection lower metal layer 110b and conductive layer 110c constitute a conducting block 110, and this conducting block 110 has a side 111 and an end face 112; In the present embodiment, this side 111 is made up of this first ring wall 110d, this second ring wall 110e and the 3rd ring wall 110f, so in another embodiment; This side 111 can only be made up of this first ring wall 110d and this second ring wall 110e; Perhaps, in another embodiment, this side 111 is merely this first ring wall 110d.Afterwards; See also Fig. 8 C; On this carrier 200, form an insulating barrier 120a, and this end face 112 and this side 111 of this insulating barrier 120a this protective layer 220 of covering and this conducting block 110, the formation method of this insulating barrier 120a can be chemical vapour deposition (CVD) (CVD; Chemical Vapor Deposition), the material of this insulating barrier 120a can be oxide, nitride or dielectric material.At last; See also Fig. 8 D and Fig. 8 E; Utilize plasma etching (Plasma Etching) to be removed this insulating barrier 120a on this end face 112 that is covered in this protective layer 220 and this conducting block 110; To manifest this gold layer 110h; And this insulating barrier 120a that makes this side 111 that is covered in this conducting block 110 forms this oblique cone shape insulating barrier 120 (seeing also Fig. 8 E); This oblique cone shape insulating barrier 120 has the top 122 of bottom 121 and above this bottom 121 of contiguous this carrier 200, and wherein the external diameter of this oblique cone shape insulating barrier 120 is dwindled to this top 122 by this bottom 121 gradually, this conducting block 110 and be covered in these oblique cone shape insulating barrier 120 these oblique cone shape projection cube structures 100 of formation of this side 111 of this conducting block 110.
See also Fig. 9 A to Fig. 9 C; It is one be provided with a plurality of oblique cone shape projection cube structures 100 carrier 200 be engaged in the schematic flow sheet of a plurality of connection gaskets 310 of a substrate 300; At first, see also Fig. 9 A, when this carrier 200 is engaged in this substrate 300 with above-mentioned oblique cone shape projection cube structure 100; This substrate 300 is provided with an anisotropic conductive 400 (ACF); This anisotropic conductive 400 is generally the film under the B-STAGE situation, and it mainly is made up of colloid 410 and 420 of a plurality of conducting particless, and this colloid 410 can be filled between this carrier 200 and this substrate 300; It has prevent moisture, then, the function of heat-resisting and insulation, above-mentioned conducting particles 420 is used for connecting above-mentioned oblique cone shape projection cube structure 100 and above-mentioned connection gasket 310.Then; See also Fig. 9 B; Under suitable temperature environment, make these anisotropic conductive 400 tool flowables, therefore when this oblique cone shape projection cube structure 100 presses this anisotropic conductive 400; Because the external diameter of this oblique cone shape insulating barrier 120 is dwindled to this top 122 by this bottom 121 gradually; Therefore make this oblique cone shape projection cube structure 100 can embed fast in this anisotropic conductive 400, and can increase the flow efficiency of this anisotropic conductive 400, so that this anisotropic conductive 400 can be filled between this carrier 200 and this substrate 300 fast.Then; See also Fig. 9 C; When this oblique cone shape projection cube structure 100 on this carrier 200 presses this anisotropic conductive 400, can cause the above-mentioned conducting particles 420 in this anisotropic conductive 400 to accumulate in 100 of this adjacent oblique cone shape projection cube structures, right because this oblique cone shape insulating barrier 120 is coated on this side 111 of this conducting block 110; Therefore can avoid this adjacent oblique cone shape projection cube structure 100 to assemble and cause short circuit, to improve the packaging technology yield because of above-mentioned conducting particles 420.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be the content that does not break away from technical scheme of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (8)
1. oblique cone shape projection cube structure, it is arranged on the carrier, and this carrier has a plurality of weld pads and a protective layer; This protective layer has a plurality of openings; And above-mentioned opening manifests above-mentioned weld pad, and this oblique cone shape projection cube structure and this weld pad electrically connect, and it is characterized in that including:
One conducting block, it has a side and an end face, and this conducting block is arranged on this weld pad of this carrier; And
One oblique cone shape insulating barrier, it is coated on this side of this conducting block, and this oblique cone shape insulating barrier has the top of bottom and above this bottom of contiguous this carrier, and wherein the external diameter of this oblique cone shape insulating barrier is dwindled to this top by this bottom gradually.
2. oblique cone shape projection cube structure as claimed in claim 1; It is characterized in that this conducting block includes a conductive body and a projection lower metal layer; This conducting block electrically connects with this projection lower metal layer and this weld pad; This projection lower metal layer has one first ring wall, and this oblique cone shape insulating barrier coats this first ring wall of this projection lower metal layer.
3. oblique cone shape projection cube structure as claimed in claim 2 is characterized in that this conducting block includes a conductive layer in addition, and this conductive body is between this projection lower metal layer and this conductive layer.
4. oblique cone shape projection cube structure as claimed in claim 3 is characterized in that this conductive layer has one second ring wall, and this oblique cone shape insulating barrier coats this second ring wall of this conductive layer.
5. oblique cone shape projection cube structure as claimed in claim 2, the material that it is characterized in that this conductive body is a copper.
6. oblique cone shape projection cube structure as claimed in claim 4 is characterized in that this conductive layer has a nickel dam and a gold medal layer, this nickel dam this conductive body and should the gold layer between.
7. oblique cone shape projection cube structure as claimed in claim 4 is characterized in that this oblique cone shape insulating barrier manifests this gold layer.
8. oblique cone shape projection cube structure as claimed in claim 2 is characterized in that this oblique cone shape insulating barrier comprises an oxide layer and a nitration case, and this oxide layer is between this conducting block and this nitration case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110009625.0A CN102593068B (en) | 2011-01-11 | 2011-01-11 | Oblique-conic-shaped bump structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110009625.0A CN102593068B (en) | 2011-01-11 | 2011-01-11 | Oblique-conic-shaped bump structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102593068A true CN102593068A (en) | 2012-07-18 |
| CN102593068B CN102593068B (en) | 2015-08-19 |
Family
ID=46481523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110009625.0A Active CN102593068B (en) | 2011-01-11 | 2011-01-11 | Oblique-conic-shaped bump structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102593068B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105513983A (en) * | 2014-09-26 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Wafer bonding method and wafer bonding structure |
| CN106098679A (en) * | 2016-08-08 | 2016-11-09 | 深圳市泓亚智慧科技股份有限公司 | A kind of LED filament light source and preparation method thereof |
| CN108028229A (en) * | 2015-09-14 | 2018-05-11 | 美光科技公司 | The lantern ring and associated system and method for Underbump metallization structure |
| CN110391142A (en) * | 2018-04-20 | 2019-10-29 | 台湾积体电路制造股份有限公司 | The method for forming semiconductor devices |
| CN112838066A (en) * | 2019-11-24 | 2021-05-25 | 南亚科技股份有限公司 | Semiconductor structure and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1343005A (en) * | 2000-09-08 | 2002-04-03 | 北京普罗强生半导体有限公司 | Application of electrically conductive resin in binding of semiconductor device |
| CN1344017A (en) * | 2000-09-18 | 2002-04-10 | 联友光电股份有限公司 | Structure with several convex and blocks having insulating side walls and its making method |
| CN1437256A (en) * | 2002-02-07 | 2003-08-20 | 日本电气株式会社 | Semiconductor element and producing method thereof, and semiconductor device and producing method thereof |
| CN1601734A (en) * | 2003-09-24 | 2005-03-30 | 财团法人工业技术研究院 | Elastic lug structure and its mfg method |
| US20060017175A1 (en) * | 2000-06-08 | 2006-01-26 | Salman Akram | Collars, support structures, and forms for protuding conductive structures |
| US7170171B2 (en) * | 2000-06-08 | 2007-01-30 | Micron Technology, Inc. | Support ring for use with a contact pad and semiconductor device components including the same |
| CN101567348A (en) * | 2008-04-21 | 2009-10-28 | 南茂科技股份有限公司 | Wafer structure with convex lumps and forming method thereof |
-
2011
- 2011-01-11 CN CN201110009625.0A patent/CN102593068B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060017175A1 (en) * | 2000-06-08 | 2006-01-26 | Salman Akram | Collars, support structures, and forms for protuding conductive structures |
| US7170171B2 (en) * | 2000-06-08 | 2007-01-30 | Micron Technology, Inc. | Support ring for use with a contact pad and semiconductor device components including the same |
| CN1343005A (en) * | 2000-09-08 | 2002-04-03 | 北京普罗强生半导体有限公司 | Application of electrically conductive resin in binding of semiconductor device |
| CN1344017A (en) * | 2000-09-18 | 2002-04-10 | 联友光电股份有限公司 | Structure with several convex and blocks having insulating side walls and its making method |
| CN1437256A (en) * | 2002-02-07 | 2003-08-20 | 日本电气株式会社 | Semiconductor element and producing method thereof, and semiconductor device and producing method thereof |
| CN1601734A (en) * | 2003-09-24 | 2005-03-30 | 财团法人工业技术研究院 | Elastic lug structure and its mfg method |
| CN101567348A (en) * | 2008-04-21 | 2009-10-28 | 南茂科技股份有限公司 | Wafer structure with convex lumps and forming method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105513983A (en) * | 2014-09-26 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Wafer bonding method and wafer bonding structure |
| CN105513983B (en) * | 2014-09-26 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | The method and wafer bonding structure of wafer bonding |
| CN108028229A (en) * | 2015-09-14 | 2018-05-11 | 美光科技公司 | The lantern ring and associated system and method for Underbump metallization structure |
| CN106098679A (en) * | 2016-08-08 | 2016-11-09 | 深圳市泓亚智慧科技股份有限公司 | A kind of LED filament light source and preparation method thereof |
| CN110391142A (en) * | 2018-04-20 | 2019-10-29 | 台湾积体电路制造股份有限公司 | The method for forming semiconductor devices |
| CN112838066A (en) * | 2019-11-24 | 2021-05-25 | 南亚科技股份有限公司 | Semiconductor structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102593068B (en) | 2015-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10211190B2 (en) | Semiconductor packages having reduced stress | |
| CN102290394B (en) | Heat radiating electronic package structure and method of manufacturing the same | |
| TWI625838B (en) | Composite solder ball, semiconductor package, semiconductor device and manufacturing method thereof | |
| TWI425667B (en) | Led flip chip structure and method for manufacturing the same | |
| TWI334215B (en) | Semiconductor package having electromagnetic shielding cap | |
| US20120077312A1 (en) | Flip-chip bonding method to reduce voids in underfill material | |
| TW201537719A (en) | Stacked semiconductor package | |
| WO2017041689A1 (en) | Sensing chip encapsulation component and electronic device with same | |
| US9633966B2 (en) | Stacked semiconductor package and manufacturing method thereof | |
| CN102593068A (en) | Oblique-conic-shaped bump structure | |
| US20090091027A1 (en) | Semiconductor package having restraining ring surfaces against soldering crack | |
| CN105321908A (en) | Semiconductor device and manufacturing method of semiconductor device | |
| CN102569234A (en) | Ball grid array encapsulating structure and encapsulation method | |
| US20080290502A1 (en) | Integrated circuit package with soldered lid for improved thermal performance | |
| CN103650135B (en) | Semiconductor device | |
| US11094561B2 (en) | Semiconductor package structure | |
| US8692390B2 (en) | Pyramid bump structure | |
| US20130256915A1 (en) | Packaging substrate, semiconductor package and fabrication method thereof | |
| CN109559998A (en) | Magnetic screen encapsulating structure and its manufacturing method for MRAM device | |
| US9013040B1 (en) | Memory device with die stacking and heat dissipation | |
| KR100997788B1 (en) | Semiconductor package | |
| US10170403B2 (en) | Ameliorated compound carrier board structure of flip-chip chip-scale package | |
| JP2010287859A (en) | Semiconductor chip with through electrode and semiconductor device using the same | |
| JP2011176263A (en) | Chip-scale semiconductor device package and method of manufacturing the same | |
| US20230042800A1 (en) | Electronic package and method of forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |