CN102593068B - Oblique-conic-shaped bump structure - Google Patents
Oblique-conic-shaped bump structure Download PDFInfo
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- CN102593068B CN102593068B CN201110009625.0A CN201110009625A CN102593068B CN 102593068 B CN102593068 B CN 102593068B CN 201110009625 A CN201110009625 A CN 201110009625A CN 102593068 B CN102593068 B CN 102593068B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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Abstract
The invention relates to a kind of oblique-conic-shaped bump structure, it is arranged on a carrier, this carrier has multiple weld pad and a protective layer, this protective layer has multiple opening, and above-mentioned opening manifests above-mentioned weld pad, this oblique-conic-shaped bump structure includes a conducting block and an oblique cone shape insulating barrier, this conducting block is arranged at this weld pad of this carrier, this oblique cone shape insulating barrier is coated on the side of this conducting block, the bottom and one that this oblique cone shape insulating barrier has this carrier contiguous bottom this above top, the external diameter of this oblique cone shape insulating barrier reduces to this top gradually by bottom this, when this carrier is pressed on the anisotropic conductive that a substrate and is arranged on this substrate, this oblique-conic-shaped bump structure can embed in this anisotropic conductive fast to increase this anisotropic conductive flow efficiency and can avoid causing adjacent bump shorts to improve packaging technology yield.
Description
Technical field
The invention relates to a kind of oblique-conic-shaped bump structure, relate to a kind of in pressing packaging technology especially, anisotropic conductive flow efficiency can be increased and can avoid causing adjacent projections short circuit to improve the oblique-conic-shaped bump structure of packaging technology yield.
Background technology
Electronic product must coordinate many-sided requirements such as high speed processing, multifunction, productive set, small-sized weight and low priceization, and also therefore integrated antenna package technology also and then develops towards microminiaturized, densification.The encapsulation technology of normal utilization comprises ball lattice array type encapsulation (Ball Grid Array, BGA), chip size packages (Chip-Scale Package, CSP), chip package (Flip Chip, F/C), multi-chip module (Multi-Chip Module, MCM) etc.
Refer to Fig. 1, at existing known flip chip packaging technologies mainly with the arrangement mode of face array (area array), multiple weld pads 11 (bonding pad) of one chip 10 are configured at an active surface 12 (active surface) of this chip 10, and multiple projection 20 (bump) is formed on each this weld pad 11, then, again by this chip 10 turn-over (flip), and electrically (electrically) and machinery (mechanically) are connected to a substrate 30 (as glass substrate respectively to utilize above-mentioned projection 20, pottery magnetics substrate or printed circuit board (PCB)) on multiple connection gaskets 31 (mounting pad), in existing known crystal covered package technology, an anisotropic conductive (ACF) 40 can be arranged at this base pulls on 30, refer to Fig. 2, Fig. 3, in chip package process, above-mentioned projection 20 can contact and extrude this anisotropic conductive 40, make this anisotropic conductive 40 below each this projection 20 toward each this projection 20 flows outside, and be filled between this chip 10 and this substrate 30, but because this anisotropic conductive 40 is made up of colloid 41 and multiple conducting particles 42, therefore when this anisotropic conductive 40 below each this projection 20 toward each this projection 20 flows outside time, above-mentioned conducting particles 42 can be gathered in adjacent respectively between this projection 20, therefore above-mentioned adjacent projection 20 short circuit is easily caused, thus packaging technology yield is affected.
As can be seen here, above-mentioned existing technology with in use in structure, obviously still has inconvenience and defect, and is urgently further improved.Therefore how to found a kind of oblique-conic-shaped bump structure of new structure, also become the target that current industry pole need be improved.
Summary of the invention
The object of the invention is to, overcome the defect that existing technology exists, and a kind of oblique-conic-shaped bump structure of new structure is provided, technical problem to be solved is that its this oblique-conic-shaped bump structure can be embedded in this anisotropic conductive fast, so that the flow efficiency of this anisotropic conductive can be increased, be very suitable for practicality.
Another object of the present invention is to, a kind of oblique-conic-shaped bump structure of new structure is provided, technical problem to be solved makes it that above-mentioned conducting particles can be avoided to be electrically connected respectively this oblique-conic-shaped bump structure and cause short circuit, to improve packaging technology yield, thus is more suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of oblique-conic-shaped bump structure that the present invention proposes, it is arranged on a carrier, this carrier has multiple weld pad and a protective layer, this protective layer has multiple opening, and above-mentioned opening manifests above-mentioned weld pad, this oblique-conic-shaped bump structure and this weld pad are electrically connected, and it includes: a conducting block, it has a side and an end face, and this conducting block is arranged on this weld pad of this carrier; And an oblique cone shape insulating barrier, it is coated on this side of this conducting block, the bottom and that this oblique cone shape insulating barrier has this carrier contiguous bottom this above top, wherein the external diameter of this oblique cone shape insulating barrier reduces to this top gradually by bottom this.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid oblique-conic-shaped bump structure, this wherein said conducting block includes a conductive body and a Underbump metallization layer, this conducting block is electrically connected with this Underbump metallization layer and this weld pad, this Underbump metallization layer has one first ring wall, this first ring wall of this oblique cone shape insulating barrier this Underbump metallization layer coated.
Aforesaid oblique-conic-shaped bump structure, this wherein said conducting block separately includes a conductive layer, and this conductive body is between this Underbump metallization layer and this conductive layer.
Aforesaid oblique-conic-shaped bump structure, this wherein said conductive layer has one second ring wall, this second ring wall of this oblique cone shape insulating barrier this conductive layer coated.
Aforesaid oblique-conic-shaped bump structure, the material of this wherein said conductive body is copper.
Aforesaid oblique-conic-shaped bump structure, this wherein said conductive layer has a nickel dam and a layer gold, and this nickel dam is between this conductive body and this layer gold.
Aforesaid oblique-conic-shaped bump structure, this wherein said oblique cone shape insulating barrier manifests this layer gold.
Aforesaid oblique-conic-shaped bump structure, this wherein said oblique cone shape insulating barrier comprises an oxide layer and a nitration case, and this oxide layer is between this conducting block and this nitration case.
The present invention compared with prior art has obvious advantage and beneficial effect.As known from the above, for achieving the above object, the invention provides a kind of oblique-conic-shaped bump structure, it is arranged on a carrier, this oblique-conic-shaped bump structure includes a conducting block and an oblique cone shape insulating barrier, this conducting block is arranged on a weld pad of this carrier, this oblique cone shape insulating barrier is coated on a side of this conducting block, the bottom and one that this oblique cone shape insulating barrier has this carrier contiguous bottom this above top, the external diameter of this oblique cone shape insulating barrier reduces to this top gradually by bottom this, when this carrier is pressed on the anisotropic conductive that a substrate and is arranged on this substrate, because the external diameter of this oblique cone shape insulating barrier reduces to this top gradually by bottom this, therefore this oblique-conic-shaped bump structure is made can to embed fast in this anisotropic conductive, so that the flow efficiency of this anisotropic conductive can be increased.Another object is to provide a kind of oblique-conic-shaped bump structure, when this carrier is pressed on this substrate and this anisotropic conductive, this anisotropic conductive can be caused to be extruded by this oblique-conic-shaped bump structure, and make the multiple conducting particless in this anisotropic conductive be gathered between this adjacent oblique-conic-shaped bump structure, but because this insulating barrier is coated on this side of this conducting block, therefore above-mentioned conducting particles can be avoided to be electrically connected respectively this oblique-conic-shaped bump structure and cause short circuit, to improve packaging technology yield.
By technique scheme, oblique-conic-shaped bump structure of the present invention at least has following advantages and beneficial effect: when this carrier is pressed on the anisotropic conductive that a substrate and is arranged on this substrate, because the external diameter of this oblique cone shape insulating barrier reduces to this top gradually by bottom this, therefore this oblique-conic-shaped bump structure is made can to embed fast in this anisotropic conductive, so that the flow efficiency of this anisotropic conductive can be increased.
When this carrier is pressed on this substrate and this anisotropic conductive, this anisotropic conductive can be caused to be extruded by this oblique-conic-shaped bump structure, and make the multiple conducting particless in this anisotropic conductive be gathered between this adjacent oblique-conic-shaped bump structure, but because this insulating barrier is coated on this side of this conducting block, therefore above-mentioned conducting particles can be avoided to be electrically connected respectively this oblique-conic-shaped bump structure and cause short circuit, to improve packaging technology yield.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of specification, and can become apparent to allow above and other objects of the present invention, feature and advantage, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Fig. 1: the schematic diagram before the engaging with a chip and a substrate of existing known flip chip packaging technologies.
Fig. 2: this chip of existing known flip chip packaging technologies presses the anisotropic conductive schematic diagram on this substrate.
Fig. 3: this chip join of existing known flip chip packaging technologies is in the schematic diagram of this substrate.
Fig. 4: according to a preferred embodiment of the present invention, a kind of cutaway view of oblique-conic-shaped bump structure.
Fig. 5: according to another preferred embodiment of the present invention, a kind of cutaway view of oblique-conic-shaped bump structure.
Fig. 6: according to another preferred embodiment of the present invention, a kind of cutaway view of oblique-conic-shaped bump structure.
Fig. 7: according to another preferred embodiment of the present invention, a kind of cutaway view of oblique-conic-shaped bump structure.
Fig. 8 A to Fig. 8 E: according to a preferred embodiment of the present invention, a kind of schematic diagram of oblique-conic-shaped bump structure technique.
Fig. 9 A to Fig. 9 C: according to a preferred embodiment of the present invention, a carrier being provided with an oblique-conic-shaped bump structure is engaged in the schematic flow sheet of a substrate.
10: chip 11: weld pad
12: active surface
20: projection
30: substrate 31: connection gasket
40: anisotropic conductive 41: colloid
42: conducting particles
100: oblique-conic-shaped bump structure
110: conducting block 110a: conductive body
110b: Underbump metallization layer 110c: conductive layer
110d: the first ring wall 110e: the second ring wall
110f: the three ring wall 110g: nickel dam
110h: layer gold
111: side 112: end face
120: oblique cone shape insulating barrier
120a: insulating barrier
121: bottom 122: top
200: carrier 210: weld pad
220: protective layer 221: opening
300: substrate 310: connection gasket
400: anisotropic conductive
410: colloid 420: conducting particles
Embodiment
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take and effect, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of oblique-conic-shaped bump structure proposed according to the present invention, structure, feature and effect thereof, be described in detail as follows.
Refer to Fig. 4, for a kind of oblique-conic-shaped bump structure 100 of the present invention, it is arranged on a carrier 200 for it, this carrier 200 has multiple weld pad 210 and a protective layer 220, this protective layer has multiple opening 221, and above-mentioned opening 221 manifests above-mentioned weld pad 210, this oblique-conic-shaped bump structure 100 is electrically connected with this weld pad 210, this oblique-conic-shaped bump structure 100 at least includes conducting block 110 and an oblique cone shape insulating barrier 120, this conducting block 110 has side 111 and an end face 112, this conducting block 110 is arranged on this weld pad 210 of this carrier 200, this oblique cone shape insulating barrier 120 is coated on this side 111 of this conducting block 110, the top 122 of the bottom 121 and that this oblique cone shape insulating barrier 120 has this carrier 200 contiguous bottom this above 121, wherein the external diameter of this oblique cone shape insulating barrier 120 is by 121 reducing gradually to this top 122 bottom this.In the present embodiment, this conducting block 110 includes a conductive body 110a, an one Underbump metallization layer 110b and conductive layer 110c, this conductive body 110a is between this Underbump metallization layer 110b and this conductive layer 110c, the material of this conductive body 110a is copper, this conducting block 110 is electrically connected with this Underbump metallization layer 110B and this weld pad 210, this conductive body 110a has one first ring wall 110d, this Underbump metallization layer 110b has one second ring wall 110e, this conductive layer 110c has one the 3rd ring wall 110f, in the present embodiment, this first ring wall 110d, this the second ring wall 110e and the 3rd ring wall 110f forms this side 111 of this conducting block 110, or, in another embodiment, this side 111 is only made up of this first ring wall 110d and this second ring wall 110e, or, in another embodiment, this side 111 is only this first ring wall 110d, in the present embodiment, this the first ring wall 110d of this oblique cone shape insulating barrier 120 this conductive body 110a at least coated and this second ring wall 110e of this Underbump metallization layer 110b, this conductive layer 110c comprises an a nickel dam 110g and layer gold 110h, this nickel dam 110g is between this conductive body 110a and this layer gold 110h, refer to Fig. 5, in another embodiment, this oblique cone shape insulating barrier 120 manifests this layer gold 110h, refer to Fig. 6, in another embodiment, this oblique cone shape insulating barrier 120 comprises oxide layer 123 and a nitration case 124, this oxide layer 123 is between this conducting block 110 and this nitration case 124, refer to Fig. 7, in another embodiment, this oxide layer 123 and this nitration case 124 manifest this layer gold 110h.
Refer to Fig. 8 A to Fig. 8 E; its technique being a kind of oblique-conic-shaped bump structure 100 of the present invention; first, refer to Fig. 8 A, a carrier 200 is provided; this carrier 200 can be the carriers such as silicon substrate, glass substrate, pottery magnetics substrate; in the present embodiment, this carrier 200 has multiple weld pad 210 and a protective layer 220, and this protective layer has multiple opening 221; and above-mentioned opening 221 manifests above-mentioned weld pad 210, the material of above-mentioned weld pad 210 can be aluminium.Then, refer to Fig. 8 B, above-mentioned weld pad 221 can be formed a Underbump metallization layer 110b (UBM, Under Bump Metallurgy), this Underbump metallization layer 110b has one second ring wall 110e, this Underbump metallization layer 110b is formed with a conductive body 110a, this conductive body 110a has one first ring wall 110d, in the present embodiment, the material of this conductive body 110a is copper, preferably, this conductive body 110a can be formed a conductive layer 110c, this conductive layer 110c has one the 3rd ring wall 110f, this conductive layer 110c comprises an a nickel dam 110g and layer gold 110h, this conductive body 110a, this Underbump metallization layer 110b and conductive layer 110c forms a conducting block 110, this conducting block 110 has side 111 and an end face 112, in the present embodiment, this side 111 is by this first ring wall 110d, this the second ring wall 110e and the 3rd ring wall 110f forms, so in another embodiment, this side 111 can only be made up of this first ring wall 110d and this second ring wall 110e, or, in another embodiment, this side 111 is only this first ring wall 110d.Afterwards; refer to Fig. 8 C; this carrier 200 is formed an insulating barrier 120a; and this insulating barrier 120a covers this end face 112 and this side 111 of this protective layer 220 and this conducting block 110; the formation method of this insulating barrier 120a can be chemical vapour deposition (CVD) (CVD; Chemical Vapor Deposition), the material of this insulating barrier 120a can be oxide, nitride or dielectric material.Finally, refer to Fig. 8 D and Fig. 8 E, utilize plasma will etch (Plasma Etching) and remove this insulating barrier 120a be covered on this end face 112 of this protective layer 220 and this conducting block 110, to manifest this layer gold 110h, and make this insulating barrier 120a of this side 111 being covered in this conducting block 110 be formed as this oblique cone shape insulating barrier 120 (referring to Fig. 8 E), the top 122 of the bottom 121 and that this oblique cone shape insulating barrier 120 has this carrier 200 contiguous bottom this above 121, wherein the external diameter of this oblique cone shape insulating barrier 120 is by 121 reducing gradually to this top 122 bottom this, this oblique cone shape insulating barrier 120 of this conducting block 110 and this side 111 of being covered in this conducting block 110 forms this oblique-conic-shaped bump structure 100.
Refer to Fig. 9 A to Fig. 9 C, it is the schematic flow sheet that a carrier 200 being provided with multiple oblique-conic-shaped bump structure 100 is engaged in multiple connection gaskets 310 of a substrate 300, first, refer to Fig. 9 A, when this carrier 200 is engaged in this substrate 300 with above-mentioned oblique-conic-shaped bump structure 100, this substrate 300 is provided with an anisotropic conductive 400 (ACF), this anisotropic conductive 400 is generally the film under B-STAGE situation, it is mainly made up of colloid 410 and multiple conducting particles 420, this colloid 410 can be filled between this carrier 200 and this substrate 300, it has and prevents moisture, then, heat-resisting and insulate function, above-mentioned conducting particles 420 is used for connecting above-mentioned oblique-conic-shaped bump structure 100 and above-mentioned connection gasket 310.Then, refer to Fig. 9 B, under suitable temperature environment, make this anisotropic conductive 400 tool flowable, therefore when this oblique-conic-shaped bump structure 100 presses this anisotropic conductive 400, because the external diameter of this oblique cone shape insulating barrier 120 is by 121 reducing gradually to this top 122 bottom this, therefore this oblique-conic-shaped bump structure 100 is made can to embed in this anisotropic conductive 400 fast, and the flow efficiency of this anisotropic conductive 400 can be increased, with make this anisotropic conductive 400 can Fast Filling between this carrier 200 and this substrate 300.Then, refer to Fig. 9 C, when this oblique-conic-shaped bump structure 100 on this carrier 200 presses this anisotropic conductive 400, the above-mentioned conducting particles 420 in this anisotropic conductive 400 can be caused to be gathered between this adjacent oblique-conic-shaped bump structure 100, so because this oblique cone shape insulating barrier 120 is coated on this side 111 of this conducting block 110, therefore this adjacent oblique-conic-shaped bump structure 100 can be avoided to cause short circuit, to improve packaging technology yield because above-mentioned conducting particles 420 assembles.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be the content not departing from technical solution of the present invention, according to any simple modification that technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (5)
1. an oblique-conic-shaped bump structure, it is arranged on a carrier, and this carrier has multiple weld pad and a protective layer; this protective layer has multiple opening; and above-mentioned opening manifests above-mentioned weld pad, this oblique-conic-shaped bump structure and this weld pad are electrically connected, and it is characterized in that including:
One conducting block, it has a side and an end face, this conducting block comprises a conductive body, a Underbump metallization layer and a conductive layer, this conducting block is arranged on this weld pad of this carrier, this conductive body is between this Underbump metallization layer and this conductive layer, and this conducting block is electrically connected with this Underbump metallization layer and this weld pad, and this Underbump metallization layer has one first ring wall, this conductive layer has one second ring wall, and this conductive body has one the 3rd ring wall; And
One oblique cone shape insulating barrier, it is coated on this side of this conducting block, the bottom and one that this oblique cone shape insulating barrier has this carrier contiguous bottom this above top, this first ring wall of this oblique cone shape insulating barrier this Underbump metallization layer coated, this the second ring wall of this conductive layer and the 3rd ring wall of this conductive body, wherein the external diameter of this oblique cone shape insulating barrier reduces to this top gradually by bottom this, this projection cube structure is made to be formed as an oblique cone shape projection, when this oblique-conic-shaped bump structure presses an anisotropic conductive, this oblique-conic-shaped bump structure can embed in this anisotropic conductive fast, and the flow efficiency of this anisotropic conductive can be increased.
2. oblique-conic-shaped bump structure as claimed in claim 1, is characterized in that the material of this conductive body is copper.
3. oblique-conic-shaped bump structure as claimed in claim 1, it is characterized in that this conductive layer has a nickel dam and a layer gold, this nickel dam is between this conductive body and this layer gold.
4. oblique-conic-shaped bump structure as claimed in claim 3, is characterized in that this oblique cone shape insulating barrier manifests this layer gold.
5. oblique-conic-shaped bump structure as claimed in claim 1, it is characterized in that this oblique cone shape insulating barrier comprises an oxide layer and a nitration case, this oxide layer is between this conducting block and this nitration case.
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| CN201110009625.0A CN102593068B (en) | 2011-01-11 | 2011-01-11 | Oblique-conic-shaped bump structure |
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| CN201110009625.0A CN102593068B (en) | 2011-01-11 | 2011-01-11 | Oblique-conic-shaped bump structure |
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| CN102593068B true CN102593068B (en) | 2015-08-19 |
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| CN105513983B (en) * | 2014-09-26 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | The method and wafer bonding structure of wafer bonding |
| US9780052B2 (en) * | 2015-09-14 | 2017-10-03 | Micron Technology, Inc. | Collars for under-bump metal structures and associated systems and methods |
| CN106098679A (en) * | 2016-08-08 | 2016-11-09 | 深圳市泓亚智慧科技股份有限公司 | A kind of LED filament light source and preparation method thereof |
| US10361122B1 (en) * | 2018-04-20 | 2019-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Processes for reducing leakage and improving adhesion |
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