CN106098679A - A kind of LED filament light source and preparation method thereof - Google Patents
A kind of LED filament light source and preparation method thereof Download PDFInfo
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- CN106098679A CN106098679A CN201610642941.4A CN201610642941A CN106098679A CN 106098679 A CN106098679 A CN 106098679A CN 201610642941 A CN201610642941 A CN 201610642941A CN 106098679 A CN106098679 A CN 106098679A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
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- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 27
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- -1 insulating barrier Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- 238000004806 packaging method and process Methods 0.000 claims description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 19
- 230000005496 eutectics Effects 0.000 claims description 10
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- 238000004026 adhesive bonding Methods 0.000 claims description 8
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
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- 239000000843 powder Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000006071 cream Substances 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to LED technical field of semiconductor illumination, provide a kind of LED filament light source and preparation method thereof, including substrate, insulating barrier, metal circuitry, lens and multiple LED flip chip, substrate be respectively equipped with insulating barrier back to two surfaces, on each insulating barrier, metal circuitry is set, the pin of each LED flip chip is towards metal circuitry, and each pin is welded on metal circuitry to electrically connect with metal circuitry, and lens packages is peripheral in each LED flip chip.This LED filament light source realizes double-edged uniformly going out light, reaches 360 degree of filament spatial and goes out the brightness uniformity of light, i.e. realizes LED filament light source full-shape stereo luminous, have more preferable thermal diffusivity simultaneously.
Description
Technical field
The present invention relates to LED technical field of semiconductor illumination, particularly relate to a kind of LED filament light source and preparation method thereof.
Background technology
LED luminous efficiency is far above electric filament lamp at present, initially enters the general lighting accounting for global power consumption 30-40%
Field, becomes the important channel significantly reducing electric consumption on lighting consumption, saving the energy.It follows that LED illumination will be towards efficiently joint
Constantly bringing forth new ideas in the directions such as energy, clean environment firendly and high performance-price ratio, promotes carrying out and implementing of whole world energy-saving and emission-reduction engineering.But LED enters
Enter general lighting field to have difficulty in taking a step always.Although the encapsulation of large-angle LED light source allows LED reach the outstanding effect of wide-angle luminescence
Really, but this Radix Rumicis be unable to reach all the time tradition tengsten lamp perfection.Room lighting should possess suitable brightness, comfortable light field, real
Existing color uniformity；But colour cast problem between LED is had time mostly at present, it is the most blue, all that space colour cast refers to that LED can produce centre
Enclosing partially yellow " yellow dizzy ", severe patient can form the light beam of high colour temperature in some angle, has undesirable effect human body.So it is each
Focus is concentrated on research LED filament by the experts and scholars of state, and the full angle enabling really to realize as tengsten lamp is luminous,
Unprecedented lighting experience will be brought.
Existing filament light sources use one side fixed chip mode, there is chip in only substrate one side, make filament front and
It is inconsistent that reverse side goes out light, and the filament light sources positive and negative emitting brightness difference of this structure is relatively big, and the front having chip is brighter, chipless
Reverse side dark, there is dark space.
And, domestic Duo Jia producer uses traditional handicraft to have been achieved with 360 degree of filament light sources and the volume production of filament ball bubble, but
There are problems, such as heat dissipation problem, the most conventional filament light sources many employings glass substrate fixes positive cartridge chip, by gold
The structure of line binding series connection, because using the LED chip glass substrate of formal dress, its Sapphire Substrate and glass substrate heat conduction and heat radiation
Energy is poor and causes light source light decay reliability to reduce.
Summary of the invention
It is an object of the invention to provide a kind of LED filament light source and preparation method thereof, it is intended to solve LED in prior art
The problem that filament positive and negative emitting brightness difference is bigger.
For solving above-mentioned technical problem, the technical scheme is that a kind of LED filament light source of offer, including substrate, absolutely
Edge layer, metal circuitry, lens and multiple LED flip chip, described substrate be respectively equipped with described insulation back to two surfaces
Layer, each described insulating barrier arranges described metal circuitry, and the pin of each described LED flip chip is towards described metallic circuit
Layer, and each described pin is welded on described metal circuitry to electrically connect with described metal circuitry, described lens packages in
Each described LED flip chip is peripheral.
Preferably, described substrate is composited by tungsten copper metal material.
Further, described metal circuitry is several and arranges in array-like, the pin of each described LED flip chip
Eutectic is welded on the described metal circuitry corresponding with described LED flip chip respectively.
Further, described lens use packaging plastic point gum forming, and described packaging plastic is uniformly mixed by silica gel and fluorescent material
Form.
Further, described lens are the lenticule of a gum forming.
Further, to include that conductive copper layer and conductive gold layer, described conductive copper layer are located at each described for described metal circuitry
On insulating barrier, described conductive gold layer is plated on each described conductive copper layer, described conductive gold layer and the two of each described LED flip chip
It is correspondingly arranged on pin.
The present invention also provides for the manufacture method of a kind of LED filament light source, comprises the following steps:
Use tungsten copper metal material synthesis substrate；
Use what aluminum alloy materials electric plating body tied up to described substrate to electroplate certain thickness aluminum respectively on two surfaces
Layer, and described aluminium lamination is changed into alumina layer, and then prepared insulating barrier by anodised method；
Metal circuitry is formed by surface process on the surface of each described insulating barrier；
Eutectic welding procedure is used multiple LED flip chip to be respectively welded on described metal circuitry, and in each institute
State the surrounding package lens of LED flip chip, and then prepared LED filament light source.
Further, when preparing metal circuitry, further comprising the steps of:
Magnetron sputtering technique and electroplating technology is used to form conductive copper layer on each described insulating barrier；
Using chemical gilding mode to form conductive gold layer on each described conductive copper layer, described conductive gold layer is described with each
The pin of LED flip chip is corresponding.
Further, being uniformly blended into fluorescent material and form packaging plastic in silica gel, described packaging plastic viscosity is h, and
20000mPa S≤h≤40000mPa S, by gluing process by mixed packaging plastic point in each described LED flip chip
The described lens of upper formation, visible light transmissivity >=90% of described lens.
Further, described lens are to be formed by spot gluing equipment point packaging plastic directly over each described LED flip chip
Lenticule, multiple described LED flip chip are arranged in array, corresponding with multiple described LED flip chip multiple described
Lenticule is also arranged in array formation microlens array.
Relative to prior art, the present invention has the technical effect that, relative to conventional filament light sources product, the present invention in fact will
Insulating barrier is divided into substrate back on two surfaces, is provided with metal circuitry, drawing of each LED flip chip on each insulating barrier
Foot is towards metal circuitry, and each pin is welded on metal circuitry, it is achieved multiple LED flip chip are electrically connected to metal electricity
On the floor of road, i.e. realize that substrate is double-edged uniformly goes out light, reach 360 degree of filament spatial and go out the brightness uniformity of light, i.e. realize
LED filament light source full-shape is stereo luminous.
Accompanying drawing explanation
Fig. 1 is the part-structure schematic diagram of the LED filament light source that the embodiment of the present invention provides；
Fig. 2 is the manufacture method flow chart of the LED filament light source that the embodiment of the present invention provides；
Fig. 3 is the manufacture method flow chart of the metal circuitry that the embodiment of the present invention provides.
Label involved by above-mentioned accompanying drawing is detailed as follows:
| Substrate | 10 | Insulating barrier | 20 |
| Metal circuitry | 30 | Tin cream | 40 |
| LED flip chip | 50 | Lens | 60 |
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and
It is not used in the restriction present invention.
It should be noted that when element is referred to as on " being fixed on " or " being arranged at " another element, and it can directly exist
On another element or it may be indirectly secured to or be arranged at by the 3rd parts on another element.When an element quilt
Being referred to as " being connected to " another element, it can be directly to another element or it may be indirect by the 3rd parts
It is connected on another element.
Also, it should be noted the orientation term such as left and right, upper and lower in the present embodiment, be only each other relative concept or
With the normal operating condition of product as reference, and should not be regarded as restrictive.
Referring to Fig. 1, the present invention provides a kind of LED filament light source, including substrate 10, insulating barrier 20, metal circuitry 30,
Lens 60 and multiple LED flip chip 50, substrate 10 be respectively equipped with insulating barrier 20 back to two surfaces, each insulating barrier 20 sets
Putting metal circuitry 30, the pin of each LED flip chip 50 is towards metal circuitry 30, and each pin is welded in metal circuitry
To electrically connect with metal circuitry 30 on 30, it is peripheral that lens 60 are packaged in each LED flip chip 50.
In embodiments of the present invention, relative to conventional filament light sources product, insulating barrier 20 is set up separately by the embodiment of the present invention
In substrate 10 back on two surfaces, on each insulating barrier 20, it is provided with metal circuitry 30, the pin of each LED flip chip 50
Towards metal circuitry 30, and each pin is welded on metal circuitry 30, it is achieved multiple LED flip chip 50 are electrically connected to gold
Belong on circuit layer 30, i.e. realize that substrate 10 is double-edged uniformly goes out light, reach the brightness that 360 degree of filament spatial go out light consistent
Property, i.e. realize LED filament light source full-shape stereo luminous.
Preferably, substrate 10 is composited by tungsten copper metal material, and tungsten copper metal material has higher heat dispersion, very
Improve greatly the thermal diffusivity of LED filament light source.
Referring to Fig. 1, further, metal circuitry 30 is several and arranges in array-like, each LED flip chip 50
Pin eutectic respectively be welded on the metal circuitry 30 corresponding with LED flip chip 50, the most multiple LED flip chip 50 are also
Arrange in array-like, it is therefore intended that improve light efficiency, obtain preferable light distribution simultaneously, effectively control the rising angle of light source.
In the present embodiment, each LED flip chip 50 is used to use eutectic welding manner to be electrically connected to metal circuitry 30
On, and eutectic welding has the advantages that thermal conductivity is high, resistance is little, heat transfer is fast, reliability is high, on the one hand improves multiple LED and falls
The rate of heat dissipation of cartridge chip 50, on the other hand makes multiple LED flip chip 50 more be firmly fixed on metal circuitry 30.
Specifically, the pin of each LED flip chip 50 is welded in the metal corresponding with LED flip chip 50 by tin cream 40
On circuit layer 30.
Referring to Fig. 1, further, lens 60 are for using packaging plastic point gum forming, and packaging plastic is equal by silica gel and fluorescent material
Even mixing, excited by the blue light of LED flip chip 50, making the light penetrated by lens 60 is white light, silica gel and fluorescent material
Different ratio will produce different photochromic and penetrate.
Specifically, the viscosity of packaging plastic is h, i.e. 20000mPa S≤h≤40000mPa S makes packaging plastic be more easy to a glue
Molding.
Specifically, visible light transmissivity >=90% of lens 60, improves the brightness of LED filament light source.
Referring to Fig. 1, further, lens 60 are the lenticule of some gum forming, and described lenticule has can be to light beam
Carry out converging, dissipate, integrate, the advantage such as uniform distribution, but also have the advantages that highly integrated, refraction mixes with diffraction,
The present embodiment uses single lenticule encapsulate single led flip-chip 50, the light intensity to injection, light angle of emergence can be realized
Degree is adjusted, and multiple LED flip chip 50 are arranged in array, and the most multiple lenticulees are also arranged in array and form lenticule battle array
Row.
Referring to Fig. 1, further, metal circuitry 30 includes conductive copper layer and conductive gold layer, and conductive copper layer is located at respectively
On insulating barrier 20, conductive gold layer is plated on each conductive copper layer, and conductive gold layer is corresponding with on the two pins of each LED flip chip 50 to be set
Putting, this is provided with and helps multiple LED flip chip 50 and connect more stable, and conductivity is higher, and conductive gold layer is easy to multiple simultaneously
The array of LED flip chip 50 is arranged.
Specifically, conductive copper layer is the electrode being located on substrate 10, the LED flip chip 50 that the surface of conductive copper layer is corresponding
Pin at formed conductive gold layer.
Please refer to Fig. 1 and Fig. 2, the present invention also provides for the manufacture method of a kind of LED filament light source, including following step
Rapid:
S01: use tungsten copper metal material synthesis substrate 10, and tungsten copper metal material has higher heat dispersion, the most greatly
Improve the thermal diffusivity of LED filament light source.
S02: use aluminum alloy materials electric plating body to tie up to the certain thickness back to electroplating respectively on two surfaces of substrate 10
Aluminium lamination, and aluminium lamination is changed into by anodised method the alumina layer with insulation characterisitic, and then prepared insulating barrier 20；
S03: form metal circuitry 30 by surface process on the surface of each insulating barrier 20；
Refer to Fig. 1 and Fig. 3, specifically, when implementing step S03, specifically include following steps:
S31: use magnetron sputtering technique and electroplating technology to form conductive copper layer on each insulating barrier 20；
S32: use chemical gilding mode to form conductive gold layer on each conductive copper layer.
Specifically, conductive gold layer is corresponding with the pin of each LED flip chip 50.
Specifically, when implementing step S31, it is also possible to copper electroplating layer is to thicken conductive copper layer, it is therefore intended that can improve and lead
Electrical efficiency, adds the reliability of conductive copper layer simultaneously；Use photoetching process to make conductive copper layer form electrode pattern, contribute to many
The layout of individual LED flip chip 50, and with the electrical connection of extraneous power supply.
S04: use eutectic welding procedure multiple LED flip chip 50 to be respectively welded on metal circuitry 30, and
The surrounding package lens 60 of each LED flip chip 50, and then prepared LED filament light source.Each LED flip chip 50 is used to use altogether
Brilliant welding manner is electrically connected on metal circuitry 30, and eutectic welding has, and thermal conductivity is high, resistance is little, heat transfer is fast, reliability
High feature, on the one hand improves the rate of heat dissipation of multiple LED flip chip 50, on the other hand makes multiple LED flip chip 50 more
Add and be firmly fixed on metal circuitry 30.
Specifically, being uniformly blended into fluorescent material and form packaging plastic in silica gel, packaging plastic viscosity is h, and 20000mPa S≤
H≤40000mPa S, when use carry out a some packaging plastic in spot gluing equipment and each LED flip chip 50 time, can make a little in each LED
Packaging plastic rapid shaping on flip-chip 50, chooses the value in viscosity interval, also can improve a glue efficiency；Pass through gluing process
Mixed packaging plastic point is formed in each LED flip chip 50 lens 60, visible light transmissivity >=90% of lens 60, carries
The brightness of high LED filament light source.
Specifically, welding tin cream 40 is used to be welded on conductive copper layer by multiple LED flip chip 50 eutectics respectively.
In the embodiment of the present invention, multiple LED flip chip 50 are welded on each metal circuitry 30 by tin cream, it is achieved just
Anti-two sides uniformly go out light, reach 360 degree of filament spatial and go out the brightness uniformity of light, i.e. realize LED filament light source full-shape three-dimensional
Luminous.
Referring to Fig. 1, further, lens 60 are to be encapsulated by spot gluing equipment point directly over each LED flip chip 50
The lenticule that glue is formed, i.e. forms bulb by spot gluing equipment point packaging plastic directly over each LED flip chip 50, falls in LED
On cartridge chip 50, every some bulb just forms a lenticule, and multiple LED flip chip are arranged in array, and falls with multiple LED
The corresponding multiple lenticulees of cartridge chip are also arranged in array formation microlens array, it is achieved good light-out effect.
Specifically, according to LED filament light-source encapsulation requirement, lenticule is done specific design, by appropriate design lenticule
The optical parametric of array and lenticular type so that LED filament light source obtains the new energy of good optics, wherein, optical parametric
Including shape, focal length, arrangement, dutycycle etc..
These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Any amendment, equivalent and the improvement etc. made within principle, should be included within the scope of the present invention.
Claims (10)
1. a LED filament light source, it is characterised in that include substrate, insulating barrier, metal circuitry, lens and multiple LED upside-down mounting
Chip, described substrate be respectively equipped with described insulating barrier back to two surfaces, each described insulating barrier arranges described metallic circuit
Layer, the pin of each described LED flip chip is towards described metal circuitry, and each described pin is welded in described metal circuitry
On to electrically connect with described metal circuitry, described lens packages is peripheral in each described LED flip chip.
2. LED filament light source as claimed in claim 1, it is characterised in that described substrate is composited by tungsten copper metal material.
3. LED filament light source as claimed in claim 1, it is characterised in that described metal circuitry be several and in array
Shape is arranged, and the pin eutectic respectively of each described LED flip chip is welded in the described metal electricity corresponding with described LED flip chip
On the floor of road.
4. LED filament light source as claimed in claim 1, it is characterised in that described lens use packaging plastic point gum forming, described
Packaging plastic is uniformly mixed by silica gel and fluorescent material.
5. the LED filament light source as described in claim 1 or 4, it is characterised in that described lens are the lenticule of a gum forming.
6. the LED filament light source as according to any one of Claims 1-4, it is characterised in that described metal circuitry includes leading
Electrolytic copper layer and conductive gold layer, described conductive copper layer is located on each described insulating barrier, and described conductive gold layer is plated on each described conductive copper
On layer, described conductive gold layer is correspondingly arranged with the two pins of each described LED flip chip.
7. the manufacture method of a LED filament light source, it is characterised in that comprise the following steps:
Use tungsten copper metal material synthesis substrate；
Use what aluminum alloy materials electric plating body tied up to described substrate to electroplate certain thickness aluminium lamination respectively on two surfaces, and
Described aluminium lamination is changed into alumina layer, and then prepared insulating barrier by anodised method；
Metal circuitry is formed by surface process on the surface of each described insulating barrier；
Eutectic welding procedure is used multiple LED flip chip to be respectively welded on described metal circuitry, and at each described LED
The surrounding package lens of flip-chip, and then prepared LED filament light source.
8. the manufacture method of LED filament light source as claimed in claim 7, it is characterised in that when preparing metal circuitry, also
Comprise the following steps:
Magnetron sputtering technique and electroplating technology is used to form conductive copper layer on each described insulating barrier；
Using chemical gilding mode to form conductive gold layer on each described conductive copper layer, described conductive gold layer is fallen with each described LED
The pin of cartridge chip is corresponding.
9. the manufacture method of LED filament light source as claimed in claim 7, it is characterised in that be uniformly blended into fluorescence in silica gel
Powder forms packaging plastic, and described packaging plastic viscosity is h, and 20000mPa S≤h≤40000mPa S, will be mixed by gluing process
Packaging plastic point after conjunction forms described lens, visible light transmissivity >=90% of described lens in each described LED flip chip.
10. the manufacture method of LED filament light source as claimed in claim 9, it is characterised in that described lens are in each described
The lenticule formed by spot gluing equipment point packaging plastic directly over LED flip chip, multiple described LED flip chip are array row
Cloth, the multiple described lenticule corresponding with multiple described LED flip chip is also arranged in array formation microlens array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610642941.4A CN106098679A (en) | 2016-08-08 | 2016-08-08 | A kind of LED filament light source and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610642941.4A CN106098679A (en) | 2016-08-08 | 2016-08-08 | A kind of LED filament light source and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
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| CN106098679A true CN106098679A (en) | 2016-11-09 |
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Application publication date: 20161109 |