CN106098679A - A kind of LED filament light source and preparation method thereof - Google Patents

A kind of LED filament light source and preparation method thereof Download PDF

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Publication number
CN106098679A
CN106098679A CN201610642941.4A CN201610642941A CN106098679A CN 106098679 A CN106098679 A CN 106098679A CN 201610642941 A CN201610642941 A CN 201610642941A CN 106098679 A CN106098679 A CN 106098679A
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CN
China
Prior art keywords
led
flip chip
light source
filament light
metal circuitry
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CN201610642941.4A
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Chinese (zh)
Inventor
鲍锋辉
李春雷
冯杰
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深圳市泓亚智慧科技股份有限公司
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Priority to CN201610642941.4A priority Critical patent/CN106098679A/en
Publication of CN106098679A publication Critical patent/CN106098679A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756Stacked arrangements of devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The present invention relates to LED technical field of semiconductor illumination, provide a kind of LED filament light source and preparation method thereof, including substrate, insulating barrier, metal circuitry, lens and multiple LED flip chip, substrate be respectively equipped with insulating barrier back to two surfaces, on each insulating barrier, metal circuitry is set, the pin of each LED flip chip is towards metal circuitry, and each pin is welded on metal circuitry to electrically connect with metal circuitry, and lens packages is peripheral in each LED flip chip.This LED filament light source realizes double-edged uniformly going out light, reaches 360 degree of filament spatial and goes out the brightness uniformity of light, i.e. realizes LED filament light source full-shape stereo luminous, have more preferable thermal diffusivity simultaneously.

Description

A kind of LED filament light source and preparation method thereof

Technical field

The present invention relates to LED technical field of semiconductor illumination, particularly relate to a kind of LED filament light source and preparation method thereof.

Background technology

LED luminous efficiency is far above electric filament lamp at present, initially enters the general lighting accounting for global power consumption 30-40% Field, becomes the important channel significantly reducing electric consumption on lighting consumption, saving the energy.It follows that LED illumination will be towards efficiently joint Constantly bringing forth new ideas in the directions such as energy, clean environment firendly and high performance-price ratio, promotes carrying out and implementing of whole world energy-saving and emission-reduction engineering.But LED enters Enter general lighting field to have difficulty in taking a step always.Although the encapsulation of large-angle LED light source allows LED reach the outstanding effect of wide-angle luminescence Really, but this Radix Rumicis be unable to reach all the time tradition tengsten lamp perfection.Room lighting should possess suitable brightness, comfortable light field, real Existing color uniformity;But colour cast problem between LED is had time mostly at present, it is the most blue, all that space colour cast refers to that LED can produce centre Enclosing partially yellow " yellow dizzy ", severe patient can form the light beam of high colour temperature in some angle, has undesirable effect human body.So it is each Focus is concentrated on research LED filament by the experts and scholars of state, and the full angle enabling really to realize as tengsten lamp is luminous, Unprecedented lighting experience will be brought.

Existing filament light sources use one side fixed chip mode, there is chip in only substrate one side, make filament front and It is inconsistent that reverse side goes out light, and the filament light sources positive and negative emitting brightness difference of this structure is relatively big, and the front having chip is brighter, chipless Reverse side dark, there is dark space.

And, domestic Duo Jia producer uses traditional handicraft to have been achieved with 360 degree of filament light sources and the volume production of filament ball bubble, but There are problems, such as heat dissipation problem, the most conventional filament light sources many employings glass substrate fixes positive cartridge chip, by gold The structure of line binding series connection, because using the LED chip glass substrate of formal dress, its Sapphire Substrate and glass substrate heat conduction and heat radiation Energy is poor and causes light source light decay reliability to reduce.

Summary of the invention

It is an object of the invention to provide a kind of LED filament light source and preparation method thereof, it is intended to solve LED in prior art The problem that filament positive and negative emitting brightness difference is bigger.

For solving above-mentioned technical problem, the technical scheme is that a kind of LED filament light source of offer, including substrate, absolutely Edge layer, metal circuitry, lens and multiple LED flip chip, described substrate be respectively equipped with described insulation back to two surfaces Layer, each described insulating barrier arranges described metal circuitry, and the pin of each described LED flip chip is towards described metallic circuit Layer, and each described pin is welded on described metal circuitry to electrically connect with described metal circuitry, described lens packages in Each described LED flip chip is peripheral.

Preferably, described substrate is composited by tungsten copper metal material.

Further, described metal circuitry is several and arranges in array-like, the pin of each described LED flip chip Eutectic is welded on the described metal circuitry corresponding with described LED flip chip respectively.

Further, described lens use packaging plastic point gum forming, and described packaging plastic is uniformly mixed by silica gel and fluorescent material Form.

Further, described lens are the lenticule of a gum forming.

Further, to include that conductive copper layer and conductive gold layer, described conductive copper layer are located at each described for described metal circuitry On insulating barrier, described conductive gold layer is plated on each described conductive copper layer, described conductive gold layer and the two of each described LED flip chip It is correspondingly arranged on pin.

The present invention also provides for the manufacture method of a kind of LED filament light source, comprises the following steps:

Use tungsten copper metal material synthesis substrate;

Use what aluminum alloy materials electric plating body tied up to described substrate to electroplate certain thickness aluminum respectively on two surfaces Layer, and described aluminium lamination is changed into alumina layer, and then prepared insulating barrier by anodised method;

Metal circuitry is formed by surface process on the surface of each described insulating barrier;

Eutectic welding procedure is used multiple LED flip chip to be respectively welded on described metal circuitry, and in each institute State the surrounding package lens of LED flip chip, and then prepared LED filament light source.

Further, when preparing metal circuitry, further comprising the steps of:

Magnetron sputtering technique and electroplating technology is used to form conductive copper layer on each described insulating barrier;

Using chemical gilding mode to form conductive gold layer on each described conductive copper layer, described conductive gold layer is described with each The pin of LED flip chip is corresponding.

Further, being uniformly blended into fluorescent material and form packaging plastic in silica gel, described packaging plastic viscosity is h, and 20000mPa S≤h≤40000mPa S, by gluing process by mixed packaging plastic point in each described LED flip chip The described lens of upper formation, visible light transmissivity >=90% of described lens.

Further, described lens are to be formed by spot gluing equipment point packaging plastic directly over each described LED flip chip Lenticule, multiple described LED flip chip are arranged in array, corresponding with multiple described LED flip chip multiple described Lenticule is also arranged in array formation microlens array.

Relative to prior art, the present invention has the technical effect that, relative to conventional filament light sources product, the present invention in fact will Insulating barrier is divided into substrate back on two surfaces, is provided with metal circuitry, drawing of each LED flip chip on each insulating barrier Foot is towards metal circuitry, and each pin is welded on metal circuitry, it is achieved multiple LED flip chip are electrically connected to metal electricity On the floor of road, i.e. realize that substrate is double-edged uniformly goes out light, reach 360 degree of filament spatial and go out the brightness uniformity of light, i.e. realize LED filament light source full-shape is stereo luminous.

Accompanying drawing explanation

Fig. 1 is the part-structure schematic diagram of the LED filament light source that the embodiment of the present invention provides;

Fig. 2 is the manufacture method flow chart of the LED filament light source that the embodiment of the present invention provides;

Fig. 3 is the manufacture method flow chart of the metal circuitry that the embodiment of the present invention provides.

Label involved by above-mentioned accompanying drawing is detailed as follows:

Substrate 10 Insulating barrier 20 Metal circuitry 30 Tin cream 40 LED flip chip 50 Lens 60

Detailed description of the invention

In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and It is not used in the restriction present invention.

It should be noted that when element is referred to as on " being fixed on " or " being arranged at " another element, and it can directly exist On another element or it may be indirectly secured to or be arranged at by the 3rd parts on another element.When an element quilt Being referred to as " being connected to " another element, it can be directly to another element or it may be indirect by the 3rd parts It is connected on another element.

Also, it should be noted the orientation term such as left and right, upper and lower in the present embodiment, be only each other relative concept or With the normal operating condition of product as reference, and should not be regarded as restrictive.

Referring to Fig. 1, the present invention provides a kind of LED filament light source, including substrate 10, insulating barrier 20, metal circuitry 30, Lens 60 and multiple LED flip chip 50, substrate 10 be respectively equipped with insulating barrier 20 back to two surfaces, each insulating barrier 20 sets Putting metal circuitry 30, the pin of each LED flip chip 50 is towards metal circuitry 30, and each pin is welded in metal circuitry To electrically connect with metal circuitry 30 on 30, it is peripheral that lens 60 are packaged in each LED flip chip 50.

In embodiments of the present invention, relative to conventional filament light sources product, insulating barrier 20 is set up separately by the embodiment of the present invention In substrate 10 back on two surfaces, on each insulating barrier 20, it is provided with metal circuitry 30, the pin of each LED flip chip 50 Towards metal circuitry 30, and each pin is welded on metal circuitry 30, it is achieved multiple LED flip chip 50 are electrically connected to gold Belong on circuit layer 30, i.e. realize that substrate 10 is double-edged uniformly goes out light, reach the brightness that 360 degree of filament spatial go out light consistent Property, i.e. realize LED filament light source full-shape stereo luminous.

Preferably, substrate 10 is composited by tungsten copper metal material, and tungsten copper metal material has higher heat dispersion, very Improve greatly the thermal diffusivity of LED filament light source.

Referring to Fig. 1, further, metal circuitry 30 is several and arranges in array-like, each LED flip chip 50 Pin eutectic respectively be welded on the metal circuitry 30 corresponding with LED flip chip 50, the most multiple LED flip chip 50 are also Arrange in array-like, it is therefore intended that improve light efficiency, obtain preferable light distribution simultaneously, effectively control the rising angle of light source.

In the present embodiment, each LED flip chip 50 is used to use eutectic welding manner to be electrically connected to metal circuitry 30 On, and eutectic welding has the advantages that thermal conductivity is high, resistance is little, heat transfer is fast, reliability is high, on the one hand improves multiple LED and falls The rate of heat dissipation of cartridge chip 50, on the other hand makes multiple LED flip chip 50 more be firmly fixed on metal circuitry 30.

Specifically, the pin of each LED flip chip 50 is welded in the metal corresponding with LED flip chip 50 by tin cream 40 On circuit layer 30.

Referring to Fig. 1, further, lens 60 are for using packaging plastic point gum forming, and packaging plastic is equal by silica gel and fluorescent material Even mixing, excited by the blue light of LED flip chip 50, making the light penetrated by lens 60 is white light, silica gel and fluorescent material Different ratio will produce different photochromic and penetrate.

Specifically, the viscosity of packaging plastic is h, i.e. 20000mPa S≤h≤40000mPa S makes packaging plastic be more easy to a glue Molding.

Specifically, visible light transmissivity >=90% of lens 60, improves the brightness of LED filament light source.

Referring to Fig. 1, further, lens 60 are the lenticule of some gum forming, and described lenticule has can be to light beam Carry out converging, dissipate, integrate, the advantage such as uniform distribution, but also have the advantages that highly integrated, refraction mixes with diffraction, The present embodiment uses single lenticule encapsulate single led flip-chip 50, the light intensity to injection, light angle of emergence can be realized Degree is adjusted, and multiple LED flip chip 50 are arranged in array, and the most multiple lenticulees are also arranged in array and form lenticule battle array Row.

Referring to Fig. 1, further, metal circuitry 30 includes conductive copper layer and conductive gold layer, and conductive copper layer is located at respectively On insulating barrier 20, conductive gold layer is plated on each conductive copper layer, and conductive gold layer is corresponding with on the two pins of each LED flip chip 50 to be set Putting, this is provided with and helps multiple LED flip chip 50 and connect more stable, and conductivity is higher, and conductive gold layer is easy to multiple simultaneously The array of LED flip chip 50 is arranged.

Specifically, conductive copper layer is the electrode being located on substrate 10, the LED flip chip 50 that the surface of conductive copper layer is corresponding Pin at formed conductive gold layer.

Please refer to Fig. 1 and Fig. 2, the present invention also provides for the manufacture method of a kind of LED filament light source, including following step Rapid:

S01: use tungsten copper metal material synthesis substrate 10, and tungsten copper metal material has higher heat dispersion, the most greatly Improve the thermal diffusivity of LED filament light source.

S02: use aluminum alloy materials electric plating body to tie up to the certain thickness back to electroplating respectively on two surfaces of substrate 10 Aluminium lamination, and aluminium lamination is changed into by anodised method the alumina layer with insulation characterisitic, and then prepared insulating barrier 20;

S03: form metal circuitry 30 by surface process on the surface of each insulating barrier 20;

Refer to Fig. 1 and Fig. 3, specifically, when implementing step S03, specifically include following steps:

S31: use magnetron sputtering technique and electroplating technology to form conductive copper layer on each insulating barrier 20;

S32: use chemical gilding mode to form conductive gold layer on each conductive copper layer.

Specifically, conductive gold layer is corresponding with the pin of each LED flip chip 50.

Specifically, when implementing step S31, it is also possible to copper electroplating layer is to thicken conductive copper layer, it is therefore intended that can improve and lead Electrical efficiency, adds the reliability of conductive copper layer simultaneously;Use photoetching process to make conductive copper layer form electrode pattern, contribute to many The layout of individual LED flip chip 50, and with the electrical connection of extraneous power supply.

S04: use eutectic welding procedure multiple LED flip chip 50 to be respectively welded on metal circuitry 30, and The surrounding package lens 60 of each LED flip chip 50, and then prepared LED filament light source.Each LED flip chip 50 is used to use altogether Brilliant welding manner is electrically connected on metal circuitry 30, and eutectic welding has, and thermal conductivity is high, resistance is little, heat transfer is fast, reliability High feature, on the one hand improves the rate of heat dissipation of multiple LED flip chip 50, on the other hand makes multiple LED flip chip 50 more Add and be firmly fixed on metal circuitry 30.

Specifically, being uniformly blended into fluorescent material and form packaging plastic in silica gel, packaging plastic viscosity is h, and 20000mPa S≤ H≤40000mPa S, when use carry out a some packaging plastic in spot gluing equipment and each LED flip chip 50 time, can make a little in each LED Packaging plastic rapid shaping on flip-chip 50, chooses the value in viscosity interval, also can improve a glue efficiency;Pass through gluing process Mixed packaging plastic point is formed in each LED flip chip 50 lens 60, visible light transmissivity >=90% of lens 60, carries The brightness of high LED filament light source.

Specifically, welding tin cream 40 is used to be welded on conductive copper layer by multiple LED flip chip 50 eutectics respectively.

In the embodiment of the present invention, multiple LED flip chip 50 are welded on each metal circuitry 30 by tin cream, it is achieved just Anti-two sides uniformly go out light, reach 360 degree of filament spatial and go out the brightness uniformity of light, i.e. realize LED filament light source full-shape three-dimensional Luminous.

Referring to Fig. 1, further, lens 60 are to be encapsulated by spot gluing equipment point directly over each LED flip chip 50 The lenticule that glue is formed, i.e. forms bulb by spot gluing equipment point packaging plastic directly over each LED flip chip 50, falls in LED On cartridge chip 50, every some bulb just forms a lenticule, and multiple LED flip chip are arranged in array, and falls with multiple LED The corresponding multiple lenticulees of cartridge chip are also arranged in array formation microlens array, it is achieved good light-out effect.

Specifically, according to LED filament light-source encapsulation requirement, lenticule is done specific design, by appropriate design lenticule The optical parametric of array and lenticular type so that LED filament light source obtains the new energy of good optics, wherein, optical parametric Including shape, focal length, arrangement, dutycycle etc..

These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and Any amendment, equivalent and the improvement etc. made within principle, should be included within the scope of the present invention.

Claims (10)

1. a LED filament light source, it is characterised in that include substrate, insulating barrier, metal circuitry, lens and multiple LED upside-down mounting Chip, described substrate be respectively equipped with described insulating barrier back to two surfaces, each described insulating barrier arranges described metallic circuit Layer, the pin of each described LED flip chip is towards described metal circuitry, and each described pin is welded in described metal circuitry On to electrically connect with described metal circuitry, described lens packages is peripheral in each described LED flip chip.
2. LED filament light source as claimed in claim 1, it is characterised in that described substrate is composited by tungsten copper metal material.
3. LED filament light source as claimed in claim 1, it is characterised in that described metal circuitry be several and in array Shape is arranged, and the pin eutectic respectively of each described LED flip chip is welded in the described metal electricity corresponding with described LED flip chip On the floor of road.
4. LED filament light source as claimed in claim 1, it is characterised in that described lens use packaging plastic point gum forming, described Packaging plastic is uniformly mixed by silica gel and fluorescent material.
5. the LED filament light source as described in claim 1 or 4, it is characterised in that described lens are the lenticule of a gum forming.
6. the LED filament light source as according to any one of Claims 1-4, it is characterised in that described metal circuitry includes leading Electrolytic copper layer and conductive gold layer, described conductive copper layer is located on each described insulating barrier, and described conductive gold layer is plated on each described conductive copper On layer, described conductive gold layer is correspondingly arranged with the two pins of each described LED flip chip.
7. the manufacture method of a LED filament light source, it is characterised in that comprise the following steps:
Use tungsten copper metal material synthesis substrate;
Use what aluminum alloy materials electric plating body tied up to described substrate to electroplate certain thickness aluminium lamination respectively on two surfaces, and Described aluminium lamination is changed into alumina layer, and then prepared insulating barrier by anodised method;
Metal circuitry is formed by surface process on the surface of each described insulating barrier;
Eutectic welding procedure is used multiple LED flip chip to be respectively welded on described metal circuitry, and at each described LED The surrounding package lens of flip-chip, and then prepared LED filament light source.
8. the manufacture method of LED filament light source as claimed in claim 7, it is characterised in that when preparing metal circuitry, also Comprise the following steps:
Magnetron sputtering technique and electroplating technology is used to form conductive copper layer on each described insulating barrier;
Using chemical gilding mode to form conductive gold layer on each described conductive copper layer, described conductive gold layer is fallen with each described LED The pin of cartridge chip is corresponding.
9. the manufacture method of LED filament light source as claimed in claim 7, it is characterised in that be uniformly blended into fluorescence in silica gel Powder forms packaging plastic, and described packaging plastic viscosity is h, and 20000mPa S≤h≤40000mPa S, will be mixed by gluing process Packaging plastic point after conjunction forms described lens, visible light transmissivity >=90% of described lens in each described LED flip chip.
10. the manufacture method of LED filament light source as claimed in claim 9, it is characterised in that described lens are in each described The lenticule formed by spot gluing equipment point packaging plastic directly over LED flip chip, multiple described LED flip chip are array row Cloth, the multiple described lenticule corresponding with multiple described LED flip chip is also arranged in array formation microlens array.
CN201610642941.4A 2016-08-08 2016-08-08 A kind of LED filament light source and preparation method thereof CN106098679A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106764560A (en) * 2016-12-24 2017-05-31 惠州市圣士照明有限公司 A kind of manufacture method of LED
WO2019015683A1 (en) * 2017-07-21 2019-01-24 亿光电子工业股份有限公司 Light-emitting device and manufacturing method therefor, and light-emitting assembly
US10680145B2 (en) 2017-08-04 2020-06-09 Everlight Electronics Co., Ltd. LED package structure and method for manufacturing same

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060001625A1 (en) * 2004-07-02 2006-01-05 Tsinghua University Double-faced light emiting diode display
CN201069070Y (en) * 2007-06-05 2008-06-04 深圳市方大国科光电技术有限公司 Multi- surface light emitting strip and tandem light emitting strip
CN201081169Y (en) * 2007-09-28 2008-07-02 大连世纪长城光电科技有限公司 Dual-side LED lamp
CN201149221Y (en) * 2007-12-27 2008-11-12 深圳市方大国科光电技术有限公司 Two-sided back light module unit
CN101800270A (en) * 2009-02-11 2010-08-11 亿光电子工业股份有限公司 Light emitting diode device and packaging method therefore
CN201651851U (en) * 2010-01-25 2010-11-24 徐强 Double-surface or multi-surface light guiding LED illuminating lamp
CN102194962A (en) * 2010-03-04 2011-09-21 展晶科技(深圳)有限公司 Packaging structure emitting light broadwise of semiconductor component
CN201986254U (en) * 2010-11-30 2011-09-21 乐健线路板(珠海)有限公司 Printed circuit board with insulation micro heat radiator
CN102593068A (en) * 2011-01-11 2012-07-18 颀邦科技股份有限公司 Oblique-conic-shaped bump structure
CN202454551U (en) * 2012-02-03 2012-09-26 昆山美微电子科技有限公司 Electroformed wafer bumping
CN103383983A (en) * 2012-05-02 2013-11-06 茂邦电子有限公司 Light emitting diode encapsulation, PCB type radiating substrate used for light emitting diode encapsulation and manufacturing method of PCB type radiating substrate
CN203983324U (en) * 2014-01-07 2014-12-03 易美芯光(北京)科技有限公司 A kind of LED integrated optical source that adopts the encapsulation of upside-down mounting blue chip
CN105390585A (en) * 2014-08-21 2016-03-09 恒日光电股份有限公司 Chip package module and package substrate

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060001625A1 (en) * 2004-07-02 2006-01-05 Tsinghua University Double-faced light emiting diode display
CN201069070Y (en) * 2007-06-05 2008-06-04 深圳市方大国科光电技术有限公司 Multi- surface light emitting strip and tandem light emitting strip
CN201081169Y (en) * 2007-09-28 2008-07-02 大连世纪长城光电科技有限公司 Dual-side LED lamp
CN201149221Y (en) * 2007-12-27 2008-11-12 深圳市方大国科光电技术有限公司 Two-sided back light module unit
CN101800270A (en) * 2009-02-11 2010-08-11 亿光电子工业股份有限公司 Light emitting diode device and packaging method therefore
CN201651851U (en) * 2010-01-25 2010-11-24 徐强 Double-surface or multi-surface light guiding LED illuminating lamp
CN102194962A (en) * 2010-03-04 2011-09-21 展晶科技(深圳)有限公司 Packaging structure emitting light broadwise of semiconductor component
CN201986254U (en) * 2010-11-30 2011-09-21 乐健线路板(珠海)有限公司 Printed circuit board with insulation micro heat radiator
CN102593068A (en) * 2011-01-11 2012-07-18 颀邦科技股份有限公司 Oblique-conic-shaped bump structure
CN202454551U (en) * 2012-02-03 2012-09-26 昆山美微电子科技有限公司 Electroformed wafer bumping
CN103383983A (en) * 2012-05-02 2013-11-06 茂邦电子有限公司 Light emitting diode encapsulation, PCB type radiating substrate used for light emitting diode encapsulation and manufacturing method of PCB type radiating substrate
CN203983324U (en) * 2014-01-07 2014-12-03 易美芯光(北京)科技有限公司 A kind of LED integrated optical source that adopts the encapsulation of upside-down mounting blue chip
CN105390585A (en) * 2014-08-21 2016-03-09 恒日光电股份有限公司 Chip package module and package substrate

Cited By (4)

* Cited by examiner, † Cited by third party
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CN106764560A (en) * 2016-12-24 2017-05-31 惠州市圣士照明有限公司 A kind of manufacture method of LED
CN106764560B (en) * 2016-12-24 2020-06-09 惠州市圣士照明有限公司 Manufacturing method of LED lamp
WO2019015683A1 (en) * 2017-07-21 2019-01-24 亿光电子工业股份有限公司 Light-emitting device and manufacturing method therefor, and light-emitting assembly
US10680145B2 (en) 2017-08-04 2020-06-09 Everlight Electronics Co., Ltd. LED package structure and method for manufacturing same

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Application publication date: 20161109