CN106856161B - method for cleaning pollutants on surface of wafer by two-phase flow atomization - Google Patents
method for cleaning pollutants on surface of wafer by two-phase flow atomization Download PDFInfo
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- CN106856161B CN106856161B CN201611149366.0A CN201611149366A CN106856161B CN 106856161 B CN106856161 B CN 106856161B CN 201611149366 A CN201611149366 A CN 201611149366A CN 106856161 B CN106856161 B CN 106856161B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
The invention discloses a method for cleaning pollutants on the surface of a wafer by two-phase flow atomization, which optimizes the step process of a cleaning process and the process parameters adopted in each step, reasonably selects the process conditions for cleaning the particle pollutants on the surface of the wafer by two-phase flow atomization, and clearly cleans a process window, thereby realizing effective cleaning of the surface of the wafer, ensuring the high-efficiency removal efficiency of the particle pollutants, and simultaneously not causing damage to the graph structure on the surface of the wafer, thereby obtaining the comprehensive and optimized cleaning effect.
Description
Technical Field
The invention relates to the technical field of wet cleaning, in particular to a method for removing pollutants on the surface of a wafer by adopting a two-phase flow atomization cleaning mode.
Background
The cleaning process is the most common process step in the integrated circuit fabrication process, and aims to effectively control the contamination level of each step to achieve the goal of each process step.
on a single-chip wet cleaning device, the effect of the cleaning process can be obviously improved by utilizing gas-liquid two-phase atomization cleaning. During the atomization cleaning process, the atomization particles formed by gas-liquid phases generate an impact force on a liquid film covering the surface of the wafer, and form a shock wave which is rapidly transmitted in the liquid film, and when the shock wave acts on particle pollutants, the process that the pollutants are separated from the surface of the wafer can be accelerated; on the other hand, the shock wave accelerates the flow speed of the cleaning solution on the wafer surface, so that the particle pollutants are more quickly carried away from the wafer surface along with the flow of the cleaning solution.
In the two-phase flow atomization cleaning process, the flow of atomization gas and liquid, the flow of a main cleaning liquid pipeline, the wafer rotating speed, the cleaning process time and the like all have obvious influence on the cleaning effect. For example, when the flow rate of the liquid for atomization is too large, the size of the atomized particles is too large, which easily causes damage to the pattern structure on the surface of the wafer; when the flow of the liquid for atomization is too small, the size of atomized particles is too small, and the kinetic energy is reduced, so that effective cleaning cannot be realized. For another example, too high wafer rotation speed may cause too thin liquid film thickness deposited on the wafer surface, which is likely to cause damage to the pattern structure; too low a wafer rotation speed may result in too thick a liquid film on the surface of the wafer, which may not ensure the effectiveness of cleaning.
therefore, it is necessary to optimize the two-phase flow atomization cleaning process and the range of each process parameter to obtain a comprehensive optimized cleaning effect.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a method for cleaning pollutants on the surface of a wafer by two-phase flow atomization, which can ensure the high-efficiency removal efficiency of particle pollutants and simultaneously can not damage the graph structure on the surface of the wafer.
In order to achieve the purpose, the technical scheme of the invention is as follows:
A method for cleaning contaminants on a wafer surface by two-phase flow atomization comprises the following steps:
The method comprises the following steps: the wafer is rotated at a first rotating speed, first cleaning liquid with a first flow rate is sprayed to the surface of the wafer through a main liquid pipe, so that a liquid film is formed on the surface of the wafer, and the surface of the wafer is cleaned at a first time;
Step two: rotating the wafer at a second rotating speed, closing the main liquid pipeline, introducing a second flow of gaseous cleaning medium and a third flow of liquid cleaning medium into the two-phase flow atomizing nozzle, spraying the modulated atomized liquid particles to the surface of the wafer through the two-phase flow atomizing nozzle, and carrying out two-phase flow atomizing cleaning on the surface of the wafer for a second time;
Step three: rotating the wafer at a third rotating speed, closing the two-phase flow atomizing nozzle, spraying second cleaning liquid at a fourth flow rate to the surface of the wafer through the main liquid pipe, and washing the surface of the wafer for a third time to separate particle pollutants from the surface of the wafer;
step four: rotating the wafer at a fourth rotating speed, closing the main liquid pipeline, spraying a drying medium to the surface of the wafer through the drying pipeline, and drying the surface of the wafer for a fourth time;
The fourth rotating speed is greater than the first rotating speed, the third rotating speed and the fourth rotating speed, the second rotating speed is not less than the first rotating speed and the third rotating speed, the second time is greater than the first time, the third time and the fourth time are not less than the first time, the second flow is greater than the fifth flow, the fifth flow is greater than the first flow, the third flow and the fourth flow, and the first flow and the fourth flow are greater than the third flow.
Preferably, in step one and step three, the adjustment is such that the main liquid line sprays the first and second cleaning liquids in a fixed position or in a moving manner.
preferably, in the second step, the two-phase flow atomizing nozzle is adjusted to make an arc reciprocating motion above the surface of the wafer, so that the atomized particles sprayed from the two-phase flow atomizing nozzle uniformly cover the whole surface range of the wafer.
Preferably, in the fourth step, the drying pipeline is adjusted to spray the drying medium in a fixed position or in a circular arc reciprocating manner.
Preferably, the first to fourth rotation speeds are 200 to 500, 200 to 800, 200 to 500, 1200 to 2100rpm, respectively.
Preferably, the first to fourth times are 5 to 20, 10 to 90, 5 to 30s, respectively.
preferably, the first flow rate and the fifth flow rate are respectively 0.5-2, 5-30, 0.05-0.3, 0.5-2 and 1-20L/min.
Preferably, the first and second cleaning liquids are the same or different.
Preferably, in step four, the drying medium is a gas or a liquid.
preferably, in the fourth step, a liquid drying medium is sprayed to the surface of the wafer through a drying pipeline, and meanwhile, a gas drying medium is sprayed to the surface of the wafer through another drying pipeline, so that the drying of the surface of the wafer is accelerated, and the watermark is prevented from being left.
according to the technical scheme, the steps and processes of the cleaning process and the process parameters adopted in each step are optimized, the process conditions for cleaning particle pollutants on the surface of the wafer through two-phase flow atomization are reasonably selected, the process window is clearly cleaned, the effective cleaning of the surface of the wafer is realized, the efficient removal efficiency of the particle pollutants is ensured, meanwhile, the graph structure on the surface of the wafer is not damaged, and therefore the comprehensive and optimized cleaning effect is obtained.
Drawings
FIG. 1 is a flow chart illustrating process steps of a method for cleaning contaminants on a wafer surface using two-phase flow atomization in accordance with a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a two-phase flow atomizing cleaning apparatus for use with the method of FIG. 1;
In the figure: 1-two-phase flow atomizing nozzle body, 2-wafer, 3-wafer clamping structure, 4-wafer carrying platform, 5-wafer rotating motor, 6-main liquid pipeline, 7-first cleaning medium pipeline, 8-N2drying pipeline, 9-second cleaning medium pipeline.
Detailed Description
the core idea of the invention is as follows: the invention discloses a method for cleaning pollutants on the surface of a wafer by adopting two-phase flow atomization, which is realized by the following steps:
The method comprises the following steps: the wafer is rotated at a first rotating speed, first cleaning liquid with a first flow rate is sprayed to the surface of the wafer through a main liquid pipe, so that a liquid film is formed on the surface of the wafer, and the surface of the wafer is cleaned at a first time;
Step two: rotating the wafer at a second rotating speed, closing the main liquid pipeline, introducing a second flow of gaseous cleaning medium and a third flow of liquid cleaning medium into the two-phase flow atomizing nozzle, spraying the modulated atomized liquid particles to the surface of the wafer through the two-phase flow atomizing nozzle, and carrying out two-phase flow atomizing cleaning on the surface of the wafer for a second time;
step three: rotating the wafer at a third rotating speed, closing the two-phase flow atomizing nozzle, spraying second cleaning liquid at a fourth flow rate to the surface of the wafer through the main liquid pipe, and washing the surface of the wafer for a third time to separate particle pollutants from the surface of the wafer;
Step four: rotating the wafer at a fourth rotating speed, closing the main liquid pipeline, spraying a drying medium to the surface of the wafer through the drying pipeline, and drying the surface of the wafer for a fourth time;
The fourth rotating speed is greater than the first rotating speed, the third rotating speed and the fourth rotating speed, the second rotating speed is not less than the first rotating speed and the third rotating speed, the second time is greater than the first time, the third time and the fourth time are not less than the first time, the second flow is greater than the fifth flow, the fifth flow is greater than the first flow, the third flow and the fourth flow, and the first flow and the fourth flow are greater than the third flow.
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
in the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, referring to fig. 1, fig. 1 is a flow chart illustrating process steps of a method for cleaning contaminants on a wafer surface by two-phase flow atomization according to a preferred embodiment of the present invention; referring to fig. 2, fig. 2 is a schematic structural diagram of a two-phase flow atomizing and cleaning apparatus used in the method of fig. 1. As shown in FIG. 2, the two-phase flow atomizing and cleaning device at least comprises a two-phase flow atomizing nozzle, a main liquid pipeline 6 and an N2Drying line 8. The two-phase flow atomizing nozzle is provided with a main body 1, and the main body 1 is connected with a first cleaning medium pipeline 7 and a second cleaning medium pipeline 9. The first cleaning medium line 7 and the second cleaning medium line 9 are used for introducing a gaseous cleaning medium into one of them and introducing a liquid cleaning medium into the other. N can also be adjusted according to the actual process requirements2The drying pipeline 8 is replaced by an IPA drying mode; or adding another drying pipeline (not shown), wherein the drying pipeline 8 can be used for spraying IPA onto the surface of the wafer, and the other drying pipeline can be used for spraying N onto the surface of the wafer2so as to accelerate the drying of the wafer surface and prevent the residual of the watermark.
As shown in fig. 2, the wafer 2 can be fixed on the wafer stage 4 by the wafer holding structure 3 and can rotate at various set speeds by the wafer rotating motor 5.
Wherein, the fixed and working methods of different washing pipelines are as follows:
(1) The two-phase flow atomizing nozzle body 1, the first cleaning medium pipeline 7 and the second cleaning medium pipeline 9 can be fixed on a swing arm (not shown), and are driven by a rotary lifting motor arranged on the swing arm to do circular arc reciprocating motion on the surface of a wafer, so that the atomizing particles sprayed out of the outlet of the two-phase flow atomizing nozzle body 1 can uniformly cover the whole wafer range.
(2) The main liquid pipe 6 can spray the first and second cleaning liquids in a fixed position (for example, a fixed position inside the cleaning chamber is used for spraying the liquid to the center of the wafer), or a swing arm is used for spraying the first and second cleaning liquids in a moving manner. The first and second cleaning liquids may be the same or different. The function is as follows: a) a uniform liquid film can be formed on the surface of the wafer, and when atomized particles are injected into the liquid film, shock waves can be formed to act on particle pollutants, so that the aim of cleaning is fulfilled; b) after the two-phase flow atomization cleaning step is finished, cleaning liquid (namely, second cleaning liquid) is sprayed through the main liquid pipeline 6, so that particle pollutants separated from the surface of the wafer are separated from the surface of the wafer along with the flow of the liquid, and the cleaning is finished.
(3)N2The drying pipeline 8 (or IPA drying pipeline) can be fixed on the swing arm, can spray at the right center of the wafer, and can also spray along with the movement of the swing arm to do circular arc reciprocating motion above the wafer, and the function of the drying pipeline is to dry the whole wafer range and prevent the residual of watermarks.
A method for cleaning contaminants on a wafer surface by two-phase flow atomization according to the present invention is described in detail with reference to fig. 1 and 2.
As shown in fig. 1, a method for cleaning contaminants on a wafer surface by two-phase flow atomization according to the present invention may include the following steps:
S1: fixing a wafer 2 to be cleaned on a wafer carrying platform 4 through a clamping structure 3 in a manual, semi-automatic or full-automatic mode;
S2: moving the wafer carrying platform to a proper process position;
S3: selecting a corresponding cleaning process menu and starting a cleaning process;
S4: spraying cleaning liquid (namely first cleaning liquid) through a main liquid pipeline 6 to form a liquid film on the surface of the wafer (the first step of the cleaning process corresponds to the first step of each process step in a cleaning process menu edited in the following table 1);
s5: spraying atomized liquid particles through the two-phase flow atomizing nozzle body 1 to perform two-phase flow atomizing cleaning (this is a second step of the cleaning process, and this step corresponds to a second step of each process step in the cleaning process menu edited in table 1 below);
S6: spraying cleaning liquid (namely, second cleaning liquid) through a main liquid pipeline, and flushing the wafer to enable particle pollutants to leave the surface of the wafer (this is the third step of the cleaning process, and this step corresponds to the third step of each process step in the cleaning process menu edited in the following table 1);
s7: by N2The drying line 8/IPA drying line or other lines (e.g., another drying line) spray the corresponding media to rapidly dry the wafer surface (this is the fourth step of the cleaning process, which corresponds to the fourth step of each process step in the cleaning process menu edited in table 1 below);
S8, closing each pipeline and finishing the cleaning process;
S9: moving the wafer carrying platform to a wafer taking and placing position;
S10: and taking out the cleaned wafer in a manual, semi-automatic or full-automatic mode.
In the above steps S1-S10, steps S1-S2 are wafer loading processes, steps S3-S8 are two-phase flow atomizing cleaning processes, and steps S9-S10 are wafer unloading processes.
in the above steps S1-S10, the cleaning process menu edited in the following Table 1 can be used.
table 1: cleaning process menu (Key process parameter range including each process step)
wherein the first to fourth rotation speeds respectively correspond to the wafer rotation speeds of 200-500, 200-800, respectively, of the first to fourth steps in Table 1,200-500, 1200-2100 rpm; the first time and the fourth time respectively correspond to the step time of the first step and the step time of the fourth step in the table 1 by 5-20 s, 10-90 s, 5-30s and 5-30 s; the first flow and the fourth flow respectively correspond to the main liquid flow of the first step and the third step in the table 1 by 0.5-2L/min, the second flow and the third flow respectively correspond to the cleaning medium flow (gaseous state) of the second step in the table 1 by 5-30L/min and the cleaning medium flow (liquid state) of the second step in the table 1 by 50-300ml/min, and the fifth flow corresponds to the N flow of the fourth step in the table 12The drying flow is 1-20L/min.
According to the method, the process conditions for cleaning particle pollutants on the surface of the wafer through two-phase flow atomization are reasonably selected, so that the surface of the wafer is effectively cleaned. Experiments show that the removal efficiency of the particle pollutants with the particle size of more than 40nm can reach more than 99.5 percent, the removal efficiency of the particle pollutants with the particle size of more than 100nm can reach more than 99.7 percent, and the removal efficiency of the particle pollutants with the particle size of more than 400nm can reach more than 99.8 percent through detection after the two-phase flow atomization cleaning is carried out on the surface of the wafer by adopting the method. Meanwhile, the two-phase flow atomization cleaning method cannot damage the fine pattern structure on the surface of the wafer.
in summary, the invention optimizes the steps of the cleaning process and the process parameters adopted in each step, reasonably selects the process conditions for cleaning the particle pollutants on the surface of the wafer by two-phase flow atomization, defines the cleaning process window, realizes effective cleaning of the surface of the wafer, ensures the high-efficiency removal efficiency of the particle pollutants, and simultaneously does not damage the graph structure on the surface of the wafer, thereby obtaining the comprehensive optimized cleaning effect.
the above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
Claims (10)
1. a method for cleaning contaminants on a wafer surface by two-phase flow atomization is characterized by comprising the following steps:
the method comprises the following steps: the wafer is rotated at a first rotating speed, first cleaning liquid with a first flow rate is sprayed to the surface of the wafer through a main liquid pipe, so that a liquid film is formed on the surface of the wafer, and the surface of the wafer is cleaned at a first time;
step two: rotating the wafer at a second rotating speed, closing the main liquid pipeline, introducing a second flow of gaseous cleaning medium and a third flow of liquid cleaning medium into the two-phase flow atomizing nozzle, spraying the modulated atomized liquid particles to the surface of the wafer through the two-phase flow atomizing nozzle, and carrying out two-phase flow atomizing cleaning on the surface of the wafer for a second time;
step three: rotating the wafer at a third rotating speed, closing the two-phase flow atomizing nozzle, spraying second cleaning liquid at a fourth flow rate to the surface of the wafer through the main liquid pipe, and washing the surface of the wafer for a third time to separate particle pollutants from the surface of the wafer;
Step four: rotating the wafer at a fourth rotating speed, closing the main liquid pipeline, spraying a drying medium to the surface of the wafer through the drying pipeline, and drying the surface of the wafer for a fourth time;
The fourth rotating speed is greater than the first rotating speed, the third rotating speed and the fourth rotating speed, the second rotating speed is not less than the first rotating speed and the third rotating speed, the second time is greater than the first time, the third time and the fourth time are not less than the first time, the second flow is greater than the fifth flow, the fifth flow is greater than the first flow, the third flow and the fourth flow, and the first flow and the fourth flow are greater than the third flow.
2. The method as claimed in claim 1, wherein the adjusting step is a step of spraying the first and second cleaning liquids in a fixed position or in a moving manner.
3. the method as claimed in claim 1, wherein in the second step, the two-phase flow atomizing nozzle is adjusted to reciprocate in an arc above the wafer surface, so that the atomized particles sprayed from the two-phase flow atomizing nozzle can uniformly cover the entire surface of the wafer.
4. the method as claimed in claim 1, wherein the step four is performed by adjusting the drying pipe to spray the drying medium in a fixed position or in an arc reciprocating manner.
5. The method as claimed in claim 1, wherein the first and fourth rotation speeds are 200-500 rpm, 200-800 rpm, 200-500 rpm, 1200-2100rpm, respectively.
6. The method as claimed in claim 1, wherein the first time and the fourth time are 5-20, 10-90, 5-30, and 5-30 seconds, respectively.
7. the method as claimed in claim 1, wherein the first and fifth flow rates are 0.5-2, 5-30, 0.05-0.3, 0.5-2, and 1-20L/min, respectively.
8. The method as claimed in claim 1, wherein the first and second cleaning liquids are the same or different.
9. The method as claimed in claim 1, wherein the drying medium is a gas or a liquid in the fourth step.
10. The method as claimed in claim 1, wherein the step four comprises spraying a liquid drying medium to the surface of the wafer through a drying pipe, and spraying a gas drying medium to the surface of the wafer through another drying pipe to accelerate the drying of the surface of the wafer and prevent the watermark from remaining.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111146073B (en) * | 2018-11-05 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Cleaning method and cleaning apparatus |
| CN110523729B (en) * | 2018-11-26 | 2021-07-13 | 北京北方华创微电子装备有限公司 | Gas-liquid two-phase flow atomization cleaning method |
| CN110473773B (en) * | 2019-08-22 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Wafer cleaning method and wafer cleaning equipment |
| CN110624893B (en) * | 2019-09-25 | 2022-06-14 | 上海华力集成电路制造有限公司 | Megasonic wave combined gas spray cleaning device and application thereof |
| WO2021081975A1 (en) * | 2019-11-01 | 2021-05-06 | Acm Research (Shanghai) Inc. | Substrate cleaning method and apparatus |
| CN117116741A (en) * | 2023-08-09 | 2023-11-24 | 中环领先半导体材料有限公司 | Cleaning method and cleaning device before wafer bonding |
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