CN117116741A - Cleaning method and cleaning device before wafer bonding - Google Patents
Cleaning method and cleaning device before wafer bonding Download PDFInfo
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- CN117116741A CN117116741A CN202311005166.8A CN202311005166A CN117116741A CN 117116741 A CN117116741 A CN 117116741A CN 202311005166 A CN202311005166 A CN 202311005166A CN 117116741 A CN117116741 A CN 117116741A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 287
- 238000000034 method Methods 0.000 title claims abstract description 102
- 238000005507 spraying Methods 0.000 claims abstract description 36
- 239000007921 spray Substances 0.000 claims abstract description 20
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 40
- 239000012498 ultrapure water Substances 0.000 claims description 40
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 16
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000010926 purge Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 29
- 230000000694 effects Effects 0.000 abstract description 11
- 238000011010 flushing procedure Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 126
- 239000000243 solution Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application discloses a cleaning method and a cleaning device before wafer bonding, wherein the cleaning method comprises the following steps: spraying a first cleaning medium towards a central positioning point to perform first stay cleaning; the first cleaning medium is enabled to spray the wafer back and forth along the path from the center positioning point to the edge positioning point, and the first swing cleaning is carried out; spraying a second cleaning medium towards the central positioning point to carry out second stay cleaning; and (5) enabling the second cleaning medium to spray the wafer in a reciprocating manner along the path from the center positioning point to the edge positioning point, and performing second swing cleaning. According to the wafer cleaning method before bonding, the cleaning step is optimized, and the mode of combining the key cleaning fixed position and the swing flushing is used, so that the wafer cleaning efficiency and the cleaning effect are effectively improved, and the removal amount of edge particles can reach more than 85%.
Description
Technical Field
The application belongs to the technical field of semiconductor manufacturing, and particularly relates to a cleaning method and a cleaning device before wafer bonding.
Background
The silicon-on-insulator (SOI) technology effectively overcomes many defects of a bulk silicon integrated circuit by a unique structure, fully exerts the advantages of the bulk silicon integrated circuit technology, and particularly improves the switching speed, reduces the parasitic effect and the like. In the process of manufacturing SOI, two wafers can be tightly bonded together by using a bonding technique between silicon and silicon dioxide or silicon dioxide and silicon dioxide, and a silicon dioxide layer is formed in the middle to serve as an insulating layer. The bonded wafer is formed by thinning one side of the wafer to a desired thickness.
Device wafers, particularly MEMS device wafers, are extremely sensitive to particles and therefore require a cleaning process prior to bonding the wafers to avoid any impurities and contaminants that may adversely affect chip production from remaining on the wafer surface. The traditional wafer cleaning method adopts continuous swing type scouring for cleaning, however, the cleaning method often has the defects of poor cleaning effect and long cleaning time, particularly more edge particles remain, and reverse thrust is generated between the edge particles and bonding wires in the subsequent bonding process, so that the bonding wires are damaged or sheared, and the bonding quality is reduced.
Disclosure of Invention
The purpose of the application is that: the application provides a cleaning method and a cleaning device before wafer bonding, and aims to solve the problems that the conventional wafer cleaning method is not ideal in wafer edge cleaning effect and residual particles are more influencing the subsequent bonding quality.
The technical scheme is as follows:
in one aspect, the present application provides a method for cleaning a wafer before bonding, which is used for cleaning the wafer before the bonding step, and includes the following steps:
spraying a first cleaning medium towards a central positioning point to perform first stay cleaning;
the first cleaning medium is enabled to spray the wafer back and forth along the path from the center positioning point to the edge positioning point, and the first swing cleaning is carried out;
spraying a second cleaning medium towards the central positioning point to carry out second stay cleaning;
and (5) enabling the second cleaning medium to spray the wafer in a reciprocating manner along the path from the center positioning point to the edge positioning point, and performing second swing cleaning.
In some embodiments, the first swing cleaning and the second swing cleaning are performed at a time T of one swing period 0 Time T of the first swing cleaning 2 Time T of the second swing cleaning 4 The method comprises the following steps: t (T) 0 :T 4 ＝1:2～4，T 2 :T 4 ＝0.5～0.8:1；
And/or, satisfy: 16s is less than or equal to T 0 ≤25s。
In some embodiments, the first dwell purge time T 1 The time T of the second stay cleaning 3 The method comprises the following steps: t (T) 3 ≤T 1 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: t is more than or equal to 10s 1 Not more than 20s, and not more than 10s is not more than T 3 ≤20s。
In some embodiments, the first dwell purge time T 1 The time T of the second stay cleaning 3 The method comprises the following steps: t is more than 0 1 -T 3 ≤5s。
In some embodiments, in the first dwell clean step and the first swing clean step, the first rotational speed V of the wafer 1 The method comprises the following steps: 120-180 rpm; and/or the number of the groups of groups,
the second dwell cleaning step and the second swing cleaning stepIn the washing step, the second rotation speed V of the wafer 2 The method comprises the following steps: 160-240 rpm.
In some embodiments, the flow rate of the first cleaning medium is less than or equal to the flow rate of the second cleaning medium.
In some embodiments, the first flow rate L of the first cleaning medium in the first dwell cleaning 1 A second flow rate L of the first cleaning medium in the first swing cleaning 2 A third flow rate L of the second cleaning medium in the second stay cleaning 3 A fourth flow rate L of the second cleaning medium in the second swing cleaning 4 The method comprises the following steps: l (L) 1 ＜L 2 ≤L 4 ≤L 3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: l is more than or equal to 0.8L/min 1 ≤1.2L/min，1L/min≤L 2 ≤2L/min，1L/min≤L 3 Not more than 2L/min and not more than 1L/min 4 ≤2L/min。
In some embodiments, the first cleaning medium is 1% ammonia water or a mixed solution of ammonia water, hydrogen peroxide and water, wherein the concentration ratio of the mixed solution of ammonia water, hydrogen peroxide and water is as follows: NH (NH) 3 ·H 2 O:H 2 O 2 :H 2 O=1:3:80; and/or the number of the groups of groups,
the second cleaning medium is deionized water or ultrapure water.
In some embodiments, when the second cleaning medium is ultra-pure water, the ultra-pure water is megasonically formed into megasonically ultra-pure water at a first megasonic power M in the second dwell cleaning 1 Second megasonic power M in the second swing purge 2 The method comprises the following steps: m is M 1 :M 2 =1:1 to 1.3; and/or the number of the groups of groups,
the method meets the following conditions: m is more than or equal to 5.25w 1 ≤10.5w。
In some embodiments, after the second swing cleaning, a third dwell cleaning is performed by spraying a second cleaning medium toward a center locating point, the third dwell cleaning being performed for a time T 5 The method comprises the following steps: t (T) 5 ≤T 3 The method comprises the steps of carrying out a first treatment on the surface of the And/or
The method meets the following conditions: t is more than or equal to 10s 5 ≤20s。
In some embodiments, in the first dwell clean step and the first swing clean step, the first rotational speed V of the wafer 1 The method comprises the following steps: 120-180 rpm; and/or the number of the groups of groups,
from the second dwell cleaning step to the third dwell cleaning step, a second rotational speed V of the wafer 2 The method comprises the following steps: 160-240 rpm.
In some embodiments, the first rotational speed V 1 Less than the second rotation speed V 2 。
In some embodiments, the first rotational speed V 1 And a second rotational speed V 2 The method meets the following conditions: v at 40rpm or less 2 -V 1 ≤60rpm。
In some embodiments, the third flow rate L of the second cleaning medium in the second dwell cleaning 3 A fifth flow rate L of the second cleaning medium in the third stay cleaning 5 The method comprises the following steps: l (L) 3 ≤L 5 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: l/min is not more than 1L 5 ≤2L/min。
In some embodiments, the ultra-pure water is megasonically formed into megasonic ultra-pure water, the megasonic ultra-pure water having megasonic power M in the second dwell rinse 1 Megasonic power M in the third dwell purge 3 The method comprises the following steps: m is M 1 ＝M 3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: m is more than or equal to 5.25w 3 ≤10.5w。
In some embodiments, a spin-drying step is performed after the third dwell wash, the spin-drying step being in the range of 15 to 25 seconds.
In some embodiments, in the spin-drying step, the third rotational speed V of the wafer 3 The method comprises the following steps: 2000-3000 rpm.
In another aspect, the present application provides a cleaning device before bonding a wafer, for completing any one of the cleaning methods before bonding a wafer, including:
the cleaning module is used for conveying and spraying the first cleaning medium and the second cleaning medium;
the control module is used for controlling the cleaning module to spray the first cleaning medium towards the central positioning point so as to carry out first stay cleaning; the first cleaning medium is enabled to spray the wafer back and forth along the path from the center positioning point to the edge positioning point, and the first swing cleaning is carried out; controlling the cleaning module to spray a second cleaning medium towards the center positioning point to perform second stay cleaning; and (5) enabling the second cleaning medium to spray the wafer in a reciprocating manner along the path from the center positioning point to the edge positioning point, and performing second swing cleaning.
In some embodiments, the control module is further configured to set the operating time, the cleaning medium flow rate, the wafer speed, and the megasonic power, and to switch the first cleaning medium or the second cleaning medium in response to a user input or reading the configuration file.
In some embodiments, the pre-wafer-bonding cleaning module further includes a carrier module for carrying the wafer and horizontally rotating the wafer.
In some embodiments, the cleaning module includes a movable swing arm having a shower at an end of the swing arm proximate to the wafer.
The beneficial effects are that: compared with the prior art, the technical scheme provided by the application effectively improves the cleaning efficiency and the cleaning effect of the wafer by optimizing the cleaning step and combining the key cleaning fixed position and the swing flushing, and the removal amount of the edge particles can reach more than 85 percent; in addition, through setting up two kinds of cleaning medium and carrying out repeated washing to the wafer, the second cleaning medium can adsorb residual solution and granule after the first cleaning medium washs, avoids secondary pollution, improves the whole removal volume of wafer surface granule.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic flow chart of a cleaning method before wafer bonding according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a cleaning device before wafer bonding according to an embodiment of the present application;
FIG. 3 is a schematic view of surface particles before and after cleaning a wafer according to embodiments 1 to 5 of the present application;
FIG. 4 is a schematic view of surface particles before and after wafer cleaning according to comparative examples 1-5 of the present application;
reference numeral, 10-wafer, 101-center positioning point, 102-edge positioning point, 20-cleaning module, 201-swing arm, 202-spraying device.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "connected," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application.
The embodiment of the application provides a cleaning method and a cleaning device before wafer bonding. The following will describe in detail. The following description of the embodiments is not intended to limit the preferred embodiments.
First, an embodiment of the present application provides a method and an apparatus for cleaning a wafer before bonding, as shown in fig. 1, where the apparatus includes:
a cleaning module 20 for delivering and spraying the first cleaning medium and the second cleaning medium. The cleaning module 20 includes a movable swing arm 201 and a shower device 202, the shower device 202 being disposed at an end of the swing arm 201 proximate to the wafer 10.
The carrying module is used for carrying the wafer 10 and horizontally rotating the wafer 10.
The center of the wafer 10 is provided with a center positioning point 101, an edge positioning point 102 is arranged near the edge, and the spraying device 202 can reciprocate between the center positioning point 101 and the edge positioning point 102 along the central axis of the wafer 10.
The control device is used for responding to the input of a user or reading a specific configuration file, setting cleaning parameters such as cleaning time, drying time, cleaning medium flow rate, wafer rotating speed, megasonic power and the like, and controlling and switching the first cleaning medium or the second cleaning medium, thereby controlling the cleaning module 20 and the bearing device to realize the method of cleaning before bonding the wafer 10.
As shown in fig. 2, the method for cleaning the wafer 10 before bonding includes the following steps:
step 1: providing a wafer 10, and arranging the wafer 10 to be V 1 The swing arm 201 stays to the center positioning point 101, a first cleaning medium is introduced into the spraying device 202, and the flow is L 1 The spray device 202 stays perpendicular to the center positioning point 101 for a period of time T 1 ；
Step 2: holding wafer 10 at V 1 The swing arm 201 reciprocates between the center positioning point 101 and the edge positioning point 102 at a certain speed to center position the center positioning point 101-the edge positioning point 102-the center positioning pointPoint 101 is a wobble period T 0 The swing cleaning time is T 2 The flow rate of the first cleaning medium is L 2 ；
Step 3: wafer 10 is set to V 2 The swing arm 201 returns to the central positioning point 101 to stay, a second cleaning medium is introduced into the spraying device 202, and the flow is L 3 Stay for cleaning time period T 3 ；
Step 4: holding wafer 10 at V 2 The swing arm 201 moves at a certain speed to reciprocate between the center positioning point 101 and the edge positioning point 102, and takes 101-102-101 as a period T 0 The swing cleaning time is T 4 The flow rate of the second cleaning medium is L 4 。
In some embodiments, after the end of step 4, the method may further include:
step 5: holding wafer 10 at V 2 The swing arm 201 returns to the central positioning point 101 to stay, the second cleaning medium is continuously introduced into the spraying device 202, and the flow is L 5 Stay for cleaning time period T 5 。
In some embodiments, after the end of step 5, the method may further include:
step 6: stopping the spraying, and setting the wafer 10 to V 3 Rotation T of the rotation speed of (2) 6 For a long period of time, the surface of the wafer 10 is dried, and cleaning before bonding is completed.
The entire surface of the wafer 10 can be cleaned by the swing type spray, but the simple swing type spray is not ideal for cleaning the wafer 10 with a large number of local particles, particularly with a large number of edge particles.
When the spraying device 202 stays and cleans at the central positioning point 101, the centrifugal force of the edge of the cleaning medium is large under the action of the rotation of the wafer 10, and the cleaning medium can spontaneously spread from the central positioning point 101 to the edge of the wafer 10, so that the focus cleaning of the local area of the wafer 10 is finished, and the edge particles are removed.
In some embodiments, T 0 、T 2 、T 4 The following are satisfied: t (T) 0 :T 2 :T 4 =1:1 to 3.2:2 to 4, and 16s is less than or equal to T 0 And the time is less than or equal to 25 seconds, namely the first cleaning medium finishes 1 to 3.2 swinging periods during swinging cleaning, and the second cleaning medium finishes 2 to 4 swinging periods during swinging cleaning. It will be appreciated that the number of oscillation cycles performed by the first cleaning medium may be any one or a range between any two of 1, 1.5, 2, 2.5, 3, 3.2; the number of oscillation cycles performed by the second cleaning medium may be any one or a range between any two of 2, 2.5, 3, 3.5, 4. The duration of one wobble period (unit: s) may be any one value or a range between any two values of 16, 17, 18, 19, 20, 21, 22, 23, 24, 25. When the swing period and the swing cleaning total time length respectively satisfy the above-described range requirements, the optimal cleaning effect of the entire surface of the wafer 10 can be achieved.
In some embodiments, T 1 、T 3 、T 5 May range from 10 to 20 seconds. It will be appreciated that T 1 、T 3 、T 5 The respective value (unit: s) may be any one value or a range between any two values of 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20; at the same time, the three parts are required to meet T 5 ≤T 3 ≤T 1 And T is 1 -T 3 And the time is less than or equal to 5 seconds. When the first cleaning medium stays on the surface of the wafer 10 for a certain time, weak reaction can be generated with the surface of the wafer 10, surface particles of the wafer 10 enter the cleaning medium solution, and then the surface particles can be removed after the second cleaning medium is cleaned, so that the reaction with the surface of the wafer 10 is not needed, and the stay time of each time is shorter than the stay cleaning time of the first cleaning medium, so that waste is avoided. When the stay cleaning time length respectively meets the requirements, the cleaning effect and the cleaning efficiency of the wafer edge particles can be ensured at the same time.
In some embodiments, T 6 Can range from 15 to 25s, it being understood that T 6 The value range (unit: s) of (a) may be any one value or a range between any two values of 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25. When T is 6 When the value of the spin-drying time of the wafer 10 meets the range requirement, the ideal spin-drying effect and the spin-drying efficiency can be achieved.
In some embodiments, V 1 Can range from 120 to 180rpm, V 2 May range from 160 to 240rpm, V 3 May range from 2000 to 3000rpm. It will be appreciated that V 1 The value (unit: rpm) of (a) may be any one value or a range between any two values of 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180; v (V) 2 The value (unit: rpm) of (a) may be any one value or a range between any two values of 160, 165, 170, 175, 180, 185, 190, 195, 200, 205, 210, 215, 220, 225, 230, 235, 240; v (V) 3 The value (unit: rpm) of (a) may be any one value or a range between any two values of 2000, 2050, 2100, 2150, 2200, 2250, 2300, 2350, 2400, 2450, 2500, 2550, 2600, 2650, 2700, 2750, 2800, 2850, 2900, 2950, 3000. When V is 1 When the above range requirements are met, it can be ensured that the first cleaning medium can sufficiently react with the surface of the wafer 10 to eliminate surface particles; when V is 2 When the range requirements are met, the second cleaning medium can be ensured to clean the particle impurities dissolved in the first cleaning medium; when V is 3 When the requirements of the range are met, ideal spin-drying efficiency of the wafer 10 can be ensured.
Further, V 1 And V 2 The relation of (2) satisfies that V is less than or equal to 40rpm 2 -V 1 And the speed is less than or equal to 60rpm. It will be appreciated that V 2 -V 1 The value (unit: rpm) of (a) may be any one value or a range between any two values of 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60. When V is 2 The value of (2) is greater than V 1 And when the difference meets the above range requirement, the second cleaning medium can be ensured to clean the first cleaning medium on the surface of the wafer 10 while the second cleaning medium is used for cleaning the particle impurities.
In some embodiments, the flow rate of the first cleaning medium is less than or equal to the flow rate of the second cleaning medium in order to further ensure that the second cleaning medium flushes out particulate impurities dissolved in the first cleaning medium while also flushing out the first cleaning medium on the surface of the wafer 10.
Further, L 1 、L 2 、L 3 、L 4 、L 5 Satisfy L 1 ＜L 2 ≤L 4 ≤L 3 ≤L 5 And 0.8L/min is less than or equal to L 1 ≤1.2L/min，1L/min≤L 2 ≤2L/min，1L/min≤L 3 ≤2L/min，1L/min≤L 4 ≤2L/min，1L/min≤L 5 Less than or equal to 2L/min. It will be appreciated that L 1 The value (unit: L/min) of (a) can be any one value or a range between any two values of 0.8, 0.9, 1.0, 1.1 and 1.2; l (L) 2 、L 3 、L 4 、L 5 The respective value (unit: L/min) may be any one or a range between any two values of 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, and satisfies L 1 ＜L 2 ≤L 4 ≤L 3 ≤L 5 . When L 1 、L 2 、L 3 、L 4 、L 5 When the above range requirements are satisfied, it is further ensured that the residual particulate impurities on the surface of the wafer 10 and the first cleaning medium are minimized.
In some embodiments, the first cleaning medium may be 1% aqueous ammonia or an SC1 cleaning solution (a mixed solution of aqueous ammonia, hydrogen peroxide and water), wherein the concentration ratio of the SC1 cleaning solution: NH (NH) 3 ·H 2 O:H 2 O 2 :H 2 O=1:3:80; the second cleaning medium may be deionized water or ultrapure water.
The dilute ammonia or SC1 cleaning solution may react weakly with the surface of the wafer 10 as follows:
Si+2NH 3 ·H 2 O+H 2 O＝(NH 4 ) 2 SiO 3 +2H 2 ；
SiO 2 +2NH 3 ·H 2 O＝(NH 4 ) 2 SiO 3 +H 2 O；
Si+2H 2 O 2 ＝SiO 2 +2H 2 O。
after the 1% ammonia water or SC1 cleaning solution reacts with the surface of the wafer 10, surface particles of the wafer 10 enter the solution, and the surface particles can be removed by subsequent deionized water or ultrapure water, and meanwhile, the 1% ammonia water or SC1 cleaning solution is cleaned; in addition, particles in Si and alkaline solution are negatively charged, and secondary pollution is not easy to form during continuous cleaning.
Further, megasonic spraying equipment may be used in conjunction with the use of ultra-pure water. Megasonic spray device megasonic power M in step 3 1 Megasonic power in step 4 is M 2 Megasonic power in step 5 is M 3 The three components satisfy the following conditions: m is M 1 :M 2 :M 3 =1:1 to 1.3:1, and 5.25 w.ltoreq.m 1 Less than or equal to 10.5w. It will be appreciated that M 1 The value (unit: w) of (a) may be any one value or a range between any two values of 5.25, 5.5, 6.0, 6.5, 7.0, 7.5, 8.0, 8.5, 9.0, 9.5, 10.0, and 10.5. When M 1 、M 2 、M 3 When the value satisfies the above range requirement, the effect of removing the surface particles by the ultrapure water is more ideal, i.e., the particles are more easily separated from the wafer 10 and removed with the ultrapure water.
Example 1
The wafer 10 is cleaned before bonding as follows:
step 1: providing a wafer 10, setting the wafer 10 to rotate at a constant speed at a rotating speed of 120rpm, enabling a swing arm 201 to stay to a central locating point 101, introducing 1% ammonia water into a spraying device 202, wherein the flow is 0.8L/min, and enabling the spraying device 202 to stay for 10s perpendicular to the central locating point 101;
step 2: the wafer 10 is kept to rotate at a constant speed of 120rpm, the swing arm 201 reciprocates between the center positioning point 101 and the edge positioning point 102 at a certain speed, 101-102-101 is used as a swing period, the period duration is 16s, the swing period is one period, and the 1% ammonia water flow is 1L/min;
step 3: setting the wafer 10 to rotate at a constant speed of 160rpm, returning the swing arm 201 to the central positioning point 101 for stopping, introducing ultra-pure water into the spraying device 202, matching with Mega megasonics, wherein the ultra-pure water flow is 1L/min, the stopping cleaning time is 10s, and the megasonics power is 5.25w;
step 4: the wafer 10 is kept to rotate at a constant speed of 160rpm, the swing arm 201 moves between the center positioning point 101 and the edge positioning point 102 at a certain speed to do reciprocating motion, the center positioning point 101, the edge positioning point 102 and the center positioning point 101 are taken as a swing period, the period duration is 16s, the swing is 2 periods, the flow of the ultrapure water is 1L/min, and the megasonic power is 5.25w;
step 5: the wafer 10 is kept to rotate at a constant speed of 160rpm, the swing arm 201 returns to the central positioning point 101 to stay, ultra-pure water is continuously introduced into the spraying device 202, the flow rate of the ultra-pure water is 1L/min, the megasonic power is 5.25w, and the stay cleaning time is 10s;
step 6: and after the spraying is finished, the wafer 10 is set to rotate at 2000rpm for 15 seconds, the surface of the wafer 10 is dried, and the cleaning before bonding is finished.
Examples 2-5 the cleaning method prior to wafer bonding was similar to example 1, except that the wafer 10 rotational speed, cleaning fluid flow, spray time, megasonic power, and other relevant parameters were adjusted.
Example 6
The wafer 10 is cleaned before bonding as follows:
step 1: providing a wafer 10, setting the wafer 10 to rotate at a constant speed at a rotating speed of 150rpm, enabling a swing arm 201 to stay to a central positioning point 101, and introducing SC1 cleaning solution into a spraying device 202, wherein the SC1 cleaning solution comprises NH 3 ·H 2 O:H 2 O 2 :H 2 O=1:3:80, flow is 1L/min, and the residence time of the spraying device 202 is 15s perpendicular to the central positioning point 101;
step 2: the wafer 10 is kept to rotate at a constant speed of 150rpm, the swing arm 201 reciprocates between the center positioning point 101 and the edge positioning point 102 at a certain speed, 101-102-101 is used as a swing period, the period duration is 20s, the swing is carried out for one period, and the flow rate of the SC1 cleaning liquid is 1.5L/min;
step 3: setting the wafer 10 to rotate at a constant speed of 200rpm, returning the swing arm 201 to the central positioning point 101 for stopping, introducing ultra-pure water to the spraying device 202, matching with Mega megasonics, wherein the ultra-pure water flow is 1.5L/min, the stopping cleaning time is 12s, and the megasonic power is 7.7w;
step 4: the wafer 10 is kept to rotate at a constant speed of 200rpm, the swing arm 201 moves at a certain speed to do reciprocating motion between the center positioning point 101 and the edge positioning point 102, the period duration is 20s, the swing is 3 periods, the ultrapure water flow is 1.5L/min, and the megasonic power is 7.7w;
step 5: the wafer 10 is kept to rotate at a constant speed of 200rpm, the swing arm 201 returns to the central positioning point 101 to stay, ultra-pure water is continuously introduced into the spraying device 202, mega megasonics is matched, the flow is 1.5L/min, the stay cleaning time is 10s, and the megasonic power is 7.7w;
step 6: and after the spraying is finished, the wafer 10 is set to rotate for 20 seconds at 2500rpm, the surface of the wafer 10 is dried, and the cleaning before bonding is finished.
Examples 7-10 the cleaning method prior to bonding the wafer 10 was similar to example 1, except that the relevant parameters such as the rotational speed of the wafer 10, the flow rate of the cleaning liquid, the spray time, and megasonic power were adjusted.
The relevant parameters for examples 1-10 are detailed in Table 1.
TABLE 1
Comparative example 1
The wafer cleaning method of comparative example 1 was the same as example 1 except that the period duration of one swing period was 10s with 101-102-101, and the rinsing with 1% ammonia water and ultrapure water was performed by swinging one cycle, respectively.
Comparative example 2
The wafer cleaning method of comparative example 2 is the same as that of example 1, except that the wafer rotation speed V at the time of 1% ammonia water cleaning is different 1 Wafer rotation speed V at 200rpm during ultrapure water cleaning 2 150rpm.
Comparative example 3
The wafer cleaning method of comparative example 3 is the same as example 1, except that L 1 1.4L/min.
Comparative example 4
The wafer 10 is cleaned before bonding as follows:
step 1: providing a wafer 10, disposing the wafer10 rotates at a constant speed of 150rpm, SC1 cleaning solution is introduced into the spraying device 202, and the SC1 cleaning solution comprises NH 3 ·H 2 O:H 2 O 2 :H 2 O=1:3:80, the flow is 1L/min, the swing arm 201 reciprocates between the center positioning point 101 and the edge positioning point 102 at a certain speed, and the swing arm takes 101-102-101 as a swing period, the period duration is 20s, and the swing is 35s;
step 2: setting the wafer 10 to rotate at a constant speed of 200rpm, introducing ultrapure water into the spraying device 202, matching with Mega megasonics, wherein the ultrapure water flow is 1.5L/min, the megasonics power is 7.7w, the swing arm 201 moves between the center positioning point 101 and the edge positioning point 102 at a certain speed to do reciprocating motion, and the period is 20s and 82s by taking 101-102-101 as a period;
step 3: and after the spraying is finished, the wafer 10 is set to rotate for 20 seconds at 2500rpm, the surface of the wafer 10 is dried, and the cleaning before bonding is finished.
Comparative example 5:
the wafer 10 is cleaned before bonding as follows:
step 1: providing a wafer 10, setting the wafer 10 to rotate at a constant speed at a rotating speed of 120rpm, enabling a swing arm 201 to stay to an edge locating point 102, introducing 1% ammonia water into a spraying device 202, wherein the flow is 0.8L/min, and enabling the spraying device 202 to stay for 10s perpendicular to the edge locating point 102;
step 2: the wafer 10 is kept to rotate at a constant speed of 120rpm, the swing arm 201 reciprocates between the center positioning point 101 and the edge positioning point 102 at a certain speed, the center positioning point 101, the edge positioning point 102 and the center positioning point 101 are taken as a swing period, the period duration is 16s, the swing is carried out for one period, and the 1% ammonia water flow is 1L/min;
step 3: setting the wafer 10 to rotate at a constant speed of 160rpm, returning the swing arm 201 to the edge positioning point 102 for stopping, introducing ultra-pure water into the spraying device 202, matching with Mega megasonics, wherein the ultra-pure water flow is 1L/min, the stopping cleaning time is 10s, and the megasonics power is 5.25w;
step 4: the wafer 10 is kept to rotate at a constant speed of 160rpm, the swing arm 201 moves between the center positioning point 101 and the edge positioning point 102 at a certain speed to do reciprocating motion, 101-102-101 is used as a swing period, the period duration is 16s, the swing is 2 periods, the flow of the ultrapure water is 1L/min, and the megasonic power is 5.25w;
step 5: the wafer 10 is kept to rotate at a constant speed of 160rpm, the swing arm 201 returns to the edge positioning point 102 to stay, ultra-pure water is continuously introduced into the spraying device 202, the flow rate of the ultra-pure water is 1L/min, the megasonic power is 5.25w, and the stay cleaning time is 10s;
step 6: and after the spraying is finished, the wafer 10 is set to rotate at 2000rpm for 15 seconds, the surface of the wafer 10 is dried, and the cleaning before bonding is finished.
Particle detection is carried out on the wafers cleaned in the above examples and comparative examples, wherein the detection instrument is KLA Tencor Surfscan SP2, particles on the surfaces of the wafers are detected through scanning of UV direct incident light, and characterization graphs of the particles on the surfaces of the wafers before and after cleaning in examples 1 to 5 are shown in FIG. 3; the characterization of the wafer surface particles before and after cleaning in comparative examples 1-5 is shown in FIG. 4.
As can be seen from a comparison of fig. 3 and fig. 4, the cleaning effect on the wafer surface is significantly improved when the solution provided by the present application is used to clean the wafer before bonding, compared with the conventional methods and other processes.
The standard for detecting the surface particles of the wafer is that the granularity is more than or equal to 0.09um, and the method is calculated by the following formula:
wherein,the higher the value, the better the cleaning effect.
The cleaning results of examples 1 to 10 and comparative examples 1 to 5 are shown in Table 2.
TABLE 2
As can be seen from Table 2, the particle removal amount of the wafer 10 cleaned by the method provided by the application can reach more than 85%, but the particle removal amount is only 50% -70% by using the conventional process or other parameter cleaning methods.
The foregoing describes in detail a cleaning method and a cleaning device before wafer bonding provided by the embodiments of the present application, and specific examples are applied to illustrate the principles and embodiments of the present application, where the foregoing description of the embodiments is only for helping to understand the technical solution and core ideas of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (21)
1. A method of cleaning a wafer (10) prior to bonding, comprising the steps of:
spraying a first cleaning medium towards a central positioning point (101) of the wafer (10) to perform first stay cleaning;
the first cleaning medium is enabled to spray the wafer (10) back and forth along the path from the center positioning point (101) to the edge positioning point (102) of the wafer (10), and the first swing cleaning is carried out;
spraying a second cleaning medium towards the central positioning point (101) to perform second stay cleaning;
and enabling the second cleaning medium to spray the wafer (10) back and forth along a path from the center positioning point (101) to the edge positioning point (102) for carrying out second swing cleaning.
2. The method for cleaning a wafer before bonding according to claim 1, wherein a time T of one swing cycle is set in the first swing cleaning and the second swing cleaning 0 Time T of the first swing cleaning 2 Time T of the second swing cleaning 4 The method comprises the following steps: t (T) 0 :T 4 ＝1:2～4，T 2 :T 4 ＝0.5～0.8:1；
And/or, satisfy: 16s is less than or equal to T 0 ≤25s。
3. The method for cleaning a wafer before bonding according to claim 1, wherein the first dwell cleaning time T 1 The time T of the second stay cleaning 3 The method comprises the following steps: t (T) 3 ≤T 1 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: t is more than or equal to 10s 1 Not more than 20s, and not more than 10s is not more than T 3 ≤20s。
4. A method of cleaning a wafer prior to bonding according to claim 3, wherein said first dwell cleaning time T 1 The time T of the second stay cleaning 3 The method comprises the following steps: t is more than 0 1 -T 3 ≤5s。
5. The method of cleaning a wafer (10) prior to bonding according to claim 1, wherein in said first dwell cleaning step and said first swing cleaning step, a first rotational speed V of said wafer 1 The method comprises the following steps: 120-180 rpm; and/or the number of the groups of groups,
in the second dwell-cleaning step and the second swing-cleaning step, a second rotational speed V of the wafer (10) 2 The method comprises the following steps: 160-240 rpm.
6. The method of claim 1, wherein the flow rate of the first cleaning medium is less than or equal to the flow rate of the second cleaning medium.
7. The method of claim 6, wherein the first flow rate L of the first cleaning medium is a first dwell cleaning 1 A second flow rate L of the first cleaning medium in the first swing cleaning 2 A third flow rate L of the second cleaning medium in the second stay cleaning 3 A fourth flow rate L of the second cleaning medium in the second swing cleaning 4 The method comprises the following steps: l (L) 1 ＜L 2 ≤L 4 ≤L 3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: l is more than or equal to 0.8L/min 1 ≤1.2L/min，1L/min≤L 2 ≤2L/min，1L/min≤L 3 Not more than 2L/min and not more than 1L/min 4 ≤2L/min。
8. The method for cleaning a wafer before bonding according to claim 1, wherein the first cleaning medium is 1% ammonia water or a mixed solution of ammonia water, hydrogen peroxide and water, and the concentration ratio of the mixed solution of ammonia water, hydrogen peroxide and water is as follows: NH (NH) 3 ·H 2 O:H 2 O 2 :H 2 O=1:3:80; and/or the number of the groups of groups,
the second cleaning medium is deionized water or ultrapure water.
9. The method of claim 1, wherein the second cleaning medium is ultra-pure water, the ultra-pure water is megasonically formed into megasonically ultra-pure water, and the megasonically ultra-pure water is at a first megasonically power M during the second dwell cleaning 1 Second megasonic power M in the second swing purge 2 The method comprises the following steps: m is M 1 :M 2 =1:1 to 1.3; and/or the number of the groups of groups,
the method meets the following conditions: m is more than or equal to 5.25w 1 ≤10.5w。
10. A wafer-bonding-front cleaning method according to claim 3, characterized in that after the second swing cleaning, the second cleaning medium is sprayed towards a central positioning point (101) for a third dwell cleaning, the third dwell cleaning time T 5 The method comprises the following steps: t (T) 5 ≤T 3 The method comprises the steps of carrying out a first treatment on the surface of the And/or
The method meets the following conditions: t is more than or equal to 10s 5 ≤20s。
11. A method for cleaning a wafer prior to bonding according to claim 10,characterized in that in the first dwell cleaning step and the first swing cleaning step, a first rotational speed V of the wafer (10) is set 1 The method comprises the following steps: 120-180 rpm; and/or the number of the groups of groups,
a second rotational speed V of the wafer (10) from the second dwell-cleaning step to the third dwell-cleaning step 2 The method comprises the following steps: 160-240 rpm.
12. The method for cleaning a wafer before bonding according to claim 11, wherein the first rotational speed V 1 Less than the second rotational speed V 2 。
13. The method for cleaning a wafer before bonding according to claim 12, wherein the first rotational speed V 1 And the second rotational speed V 2 The method meets the following conditions: v at 40rpm or less 2 -V 1 ≤60rpm。
14. The method of claim 10, wherein the second cleaning medium is at a third flow rate L 3 A fifth flow rate L of the second cleaning medium in the third stay cleaning 5 The method comprises the following steps: l (L) 3 ≤L 5 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: l/min is not more than 1L 5 ≤2L/min。
15. The method of claim 10, wherein the second cleaning medium is deionized water or ultrapure water; when the second cleaning medium is ultrapure water, the ultrapure water is megasonically formed into megasonic ultrapure water, and the megasonic ultrapure water is subjected to megasonic power M in the second dwell cleaning 1 Megasonic power M in the third dwell purge 3 The method comprises the following steps: m is M 1 ＝M 3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the number of the groups of groups,
the method meets the following conditions: m is more than or equal to 5.25w 3 ≤10.5w。
16. The method according to claim 10, wherein a spin-drying step is performed after the third dwell cleaning, the spin-drying step being performed for a time ranging from 15 to 25 seconds.
17. The method of cleaning a wafer (10) prior to bonding according to claim 16, wherein in said spin-drying step, a third rotational speed V of said wafer (10) 3 The method comprises the following steps: 2000-3000 rpm.
18. A wafer-bonding-front cleaning apparatus for performing the wafer-bonding-front cleaning method according to any one of claims 1 to 17, comprising:
a cleaning module (20) for spraying the first cleaning medium and the second cleaning medium;
the control module is used for controlling the cleaning module (20) to spray the first cleaning medium towards the center positioning point (101) for carrying out first stay cleaning; the first cleaning medium is enabled to spray the wafer (10) back and forth along the path from the center positioning point (101) to the edge positioning point (102), and the first swing cleaning is carried out; controlling the cleaning module (20) to spray the second cleaning medium towards the central positioning point (101) for carrying out second stay cleaning; and enabling the second cleaning medium to spray the wafer (10) in a reciprocating manner along the path from the center positioning point (101) to the edge positioning point (102), and performing second swing cleaning.
19. The pre-wafer-bonding cleaning apparatus of claim 18, wherein the control module is further configured to set an operating time, a cleaning medium flow rate, a wafer speed, and megasonic power, and switch the cleaning medium to the first cleaning medium or the second cleaning medium in response to a user input or a read profile.
20. The pre-wafer-bonding cleaning device according to claim 18, further comprising a carrier module for carrying the wafer (10) and horizontally rotating the wafer (10).
21. A wafer-bonded cleaning device according to claim 18, characterized in that the cleaning module (20) comprises a movable swing arm (201), the swing arm (201) being provided with a shower device (202) at one end close to the wafer (10).
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