CN106848015A - 一种氮化物半导体发光二极管及其制作方法 - Google Patents
一种氮化物半导体发光二极管及其制作方法 Download PDFInfo
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- CN106848015A CN106848015A CN201710134634.XA CN201710134634A CN106848015A CN 106848015 A CN106848015 A CN 106848015A CN 201710134634 A CN201710134634 A CN 201710134634A CN 106848015 A CN106848015 A CN 106848015A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 230000000737 periodic effect Effects 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 241000209202 Bromus secalinus Species 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710134634.XA CN106848015B (zh) | 2017-03-08 | 2017-03-08 | 一种氮化物半导体发光二极管及其制作方法 |
Applications Claiming Priority (1)
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CN201710134634.XA CN106848015B (zh) | 2017-03-08 | 2017-03-08 | 一种氮化物半导体发光二极管及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN106848015A true CN106848015A (zh) | 2017-06-13 |
CN106848015B CN106848015B (zh) | 2019-03-15 |
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CN201710134634.XA Expired - Fee Related CN106848015B (zh) | 2017-03-08 | 2017-03-08 | 一种氮化物半导体发光二极管及其制作方法 |
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CN (1) | CN106848015B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108110106A (zh) * | 2017-12-14 | 2018-06-01 | 扬州乾照光电有限公司 | 一种led芯片的制备方法及led芯片 |
CN109713077A (zh) * | 2018-12-01 | 2019-05-03 | 王星河 | 一种多重响应波段的半导体探测器 |
CN113764555A (zh) * | 2021-07-28 | 2021-12-07 | 西安电子科技大学芜湖研究院 | 基于纳米图形插入层的AlN紫外发光二极管及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7368763B2 (en) * | 2005-01-13 | 2008-05-06 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
CN101345274A (zh) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | 一种利用图形化衬底提高GaN基LED发光效率的方法 |
CN101504961A (zh) * | 2008-12-16 | 2009-08-12 | 华中科技大学 | 面发射多色发光二极管及其制造方法 |
CN102169935A (zh) * | 2010-02-18 | 2011-08-31 | Lg伊诺特有限公司 | 发光器件 |
CN103915533A (zh) * | 2014-04-10 | 2014-07-09 | 杭州士兰明芯科技有限公司 | 图形化衬底、倒装led芯片及其制作方法 |
CN105742435A (zh) * | 2016-04-20 | 2016-07-06 | 安徽三安光电有限公司 | 一种发光二极管及其制备方法 |
-
2017
- 2017-03-08 CN CN201710134634.XA patent/CN106848015B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7368763B2 (en) * | 2005-01-13 | 2008-05-06 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
CN101345274A (zh) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | 一种利用图形化衬底提高GaN基LED发光效率的方法 |
CN101504961A (zh) * | 2008-12-16 | 2009-08-12 | 华中科技大学 | 面发射多色发光二极管及其制造方法 |
CN102169935A (zh) * | 2010-02-18 | 2011-08-31 | Lg伊诺特有限公司 | 发光器件 |
CN103915533A (zh) * | 2014-04-10 | 2014-07-09 | 杭州士兰明芯科技有限公司 | 图形化衬底、倒装led芯片及其制作方法 |
CN105742435A (zh) * | 2016-04-20 | 2016-07-06 | 安徽三安光电有限公司 | 一种发光二极管及其制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108110106A (zh) * | 2017-12-14 | 2018-06-01 | 扬州乾照光电有限公司 | 一种led芯片的制备方法及led芯片 |
CN109713077A (zh) * | 2018-12-01 | 2019-05-03 | 王星河 | 一种多重响应波段的半导体探测器 |
CN113764555A (zh) * | 2021-07-28 | 2021-12-07 | 西安电子科技大学芜湖研究院 | 基于纳米图形插入层的AlN紫外发光二极管及其制备方法 |
CN113764555B (zh) * | 2021-07-28 | 2023-09-01 | 西安电子科技大学芜湖研究院 | 基于纳米图形插入层的AlN紫外发光二极管及其制备方法 |
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CN106848015B (zh) | 2019-03-15 |
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Effective date of registration: 20211216 Address after: 237161 A1 building, Lu'an University Science Park, Sanshipu Town, Jin'an District, Lu'an City, Anhui Province Patentee after: Anhui Geen Semiconductor Co.,Ltd. Address before: No. 27, Binhai community, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee before: Wang Xinghe |
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Effective date of registration: 20220623 Address after: 362343 No. 27, Binhai community, Shijing Town, Quanzhou City, Fujian Province Patentee after: Wang Xinghe Address before: 237161 A1 building, Lu'an University Science Park, Sanshipu Town, Jin'an District, Lu'an City, Anhui Province Patentee before: Anhui Geen Semiconductor Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20190315 |