CN106847994A - 用于制备低成本响应紫外可见光的光敏电阻的光敏材料 - Google Patents

用于制备低成本响应紫外可见光的光敏电阻的光敏材料 Download PDF

Info

Publication number
CN106847994A
CN106847994A CN201710028593.6A CN201710028593A CN106847994A CN 106847994 A CN106847994 A CN 106847994A CN 201710028593 A CN201710028593 A CN 201710028593A CN 106847994 A CN106847994 A CN 106847994A
Authority
CN
China
Prior art keywords
ultraviolet
visible
photo resistance
mixture
low cost
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710028593.6A
Other languages
English (en)
Inventor
翟静
朱永胜
秦佳琼
黄金书
张莹莹
胡书雅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanyang Normal University
Original Assignee
Nanyang Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanyang Normal University filed Critical Nanyang Normal University
Priority to CN201710028593.6A priority Critical patent/CN106847994A/zh
Publication of CN106847994A publication Critical patent/CN106847994A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0296Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0296Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)

Abstract

本发明公开了用于制备低成本响应紫外可见光的光敏电阻的光敏材料,利用廉价的过渡金属硝酸盐具有同稀土硝酸盐类似的化学特性,采用过渡金属硝酸盐替代稀土硝酸盐,通过在紫外可见光响应光敏电阻材料CdSeS、CdSe、CdS中掺杂质量百分比为1%的过渡金属硝酸盐,在降低紫外可见光响应光敏电阻生产成本的同时保证紫外可见光响应光敏电阻灵敏度损失较小,使紫外可见光响应光敏电阻灵敏度在可接受的范围内,利用本发明提供的制备方法所得廉价紫外可见光响应光敏电阻对波长在280 nm到670 nm之间的光具有较高的灵敏度,具有价格低廉、灵敏度高的双重优点。

Description

用于制备低成本响应紫外可见光的光敏电阻的光敏材料
技术领域
本发明涉及光敏电阻技术领域,具体地,涉及用于制备低成本可响应紫外可见光的光敏电阻的光敏材料。
背景技术
能够对可见光和近紫外光响应的紫外可见光响应光敏电阻广泛应用于光电检测控制系统,如紫外线探测器,成像型紫外告警和紫外制导等。目前,紫外可见光光敏电阻通常由附在陶瓷基体表面的光敏材料层电联两个电极组成,光敏电阻材料对紫外可见光光敏电阻的性能起决定性作用。现有紫外可见光响应光敏电阻材料多通过在对可见光敏感的CdS、CdSe混合物中掺入三元CdSeS量子点,利用三元CdSeS量子点的量子限域效应产生光谱蓝移,把光谱响应谱带扩展到近紫外光光谱。但是,现有紫外可见光响应光敏电阻材料主要存在的问题之一是:灵敏度低,难以满足现代光电检测控制系统对紫外可见光响应光敏电阻灵敏度的要求。国内外主要通过添加稀土硝酸盐材料来提高紫外可见光响应光敏电阻的灵敏度。虽然稀土硝酸盐材料大幅提高了紫外可见光响应光敏电阻的灵敏度,但是稀土硝酸盐材料价格昂贵,导致紫外可见光响应光敏电阻生产成本高,成为紫外可见光响应光敏电阻推广应用的难题。因此需要提供一种灵敏度高、价格便宜的紫外可见光响应光敏电阻,以满足光电检测控制系统对紫外可见光响应光敏电阻高灵敏度和廉价的双项要求。
发明内容
本发明的目的在于,针对上述问题,提出用于制备低成本响应紫外可见光的光敏电阻的光敏材料及该光敏电阻制备方法,以满足光电检测控制系统对紫外可见光响应光敏电阻高灵敏度和廉价的双项要求。
为实现上述目的,本发明采用的技术方案是:用于制备低成本 响应紫外可见光的光敏电阻的光敏材料,所述光敏材料由低成本紫外可见光响应光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成,所述低成本紫外可见光响应光敏溶液包括混合物和离子水,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
进一步地,所述过渡金属硝酸盐为硝酸钪、硝酸钇或硝酸锆中的任一种。
进一步地,所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
低成本可响应紫外可见光的光敏电阻的制备方法,包括以下步骤:
步骤1:制备陶瓷基体;
步骤2:配置低成本紫外可见光响应光敏溶液;
步骤3:将低成本紫外可见光响应光敏溶液喷涂在陶瓷基体的表面,形成低成本紫外可见光响应光敏材料层;
步骤4:将步骤3喷涂后的陶瓷基体静置10-30分钟后,放入900℃-1100℃恒温烘箱中烘烤10-30分钟;
步骤5:将两个电极安装在步骤4形成的低成本紫外可见光响应光敏材料层两端,得到低成本紫外可见光响应光敏电阻主体;
步骤6:在低成本紫外可见光响应光敏电阻主体表面喷涂隔离层,得到低成本紫外可见光响应光敏电阻主体。
进一步地,步骤2中,所述低成本紫外可见光响应光敏溶液,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
进一步地,所述步骤4具体为,将步骤3喷涂后的陶瓷基体静置20分钟后,放入1000℃恒温烘箱中烘烤20分钟。
进一步地,所述陶瓷基体由纯度为90%以上的三氧化二铝材料制成。
进一步地,步骤3具体为,将步骤S2低成本紫外可见光响应光敏材料溶液喷涂在陶瓷基体表面,喷涂5次,所述低成本紫外可见光响应光敏材料层厚度为4微米。
进一步地,步骤6具体为,利用环氧树脂在低成本紫外可见光响应光敏电阻主体表面,形成隔离层,所述隔离层厚度为4微米。
进一步地,所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述光敏材料溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
本发明各实施例的用于制备低成本响应紫外可见光的光敏电阻的光敏材料及该光敏电阻制备方法,利用廉价的过渡金属硝酸盐具有同稀土硝酸盐类似的化学特性,采用过渡金属硝酸盐替代稀土硝酸盐,通过在紫外可见光响应光敏电阻材料CdSeS、CdSe、CdS中掺杂质量百分比为1%的过渡金属硝酸盐,在降低紫外可见光响应光敏电阻生产成本的同时保证紫外可见光响应光敏电阻灵敏度损失较小,使紫外可见光响应光敏电阻灵敏度在可接受的范围内,利用本发明提供的制备方法所得廉价紫外可见光响应光敏电阻对波长在280nm到670 nm之间的光具有较高的灵敏度,具有价格低廉、灵敏度高的双重优点。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。
下面通过附图和实施例,对本发明的技术方案做进一步的详细描述。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。在附图中:
图1为本发明实施例所述的光敏电阻结构图。
结合附图,本发明实施例中附图标记如下:
1-陶瓷基体;2-光敏材料层;3-电极。
具体实施方式
以下结合附图对本发明的优选实施例进行说明,应当理解,此处所描述的优选实施例仅用于说明和解释本发明,并不用于限定本发明。
结合图1的结构,具体地,用于制备低成本可响应紫外可见光的光敏电阻的光敏材料,所述光敏材料由低成本紫外可见光响应光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成,所述低成本紫外可见光响应光敏溶液包括混合物和离子水,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
所述过渡金属硝酸盐为硝酸钪、硝酸钇或硝酸锆中的任一种。
所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
所述方法包括以下操作步骤:
S1,制备陶瓷基体;
S2,配置廉价紫外可见光响应光敏溶液;
S3,将廉价紫外可见光响应光敏溶液喷涂在陶瓷基体的表面,形成廉价紫外可见光响应光敏材料层;
S4,将喷涂后的陶瓷基体静置20分钟后,放入1000℃恒温烘箱中烘烤20分钟;
S5,将两个电极安装在形成廉价紫外可见光响应光敏材料层两端,得到廉价紫外可见光响应光敏电阻主体。
S6,在廉价紫外可见光响应光敏电阻主体表面喷涂隔离层,得到廉价紫外可见光响应光敏电阻。
优选地,所述步骤S1具体为:用纯度为90%以上的三氧化二铝材料制备所需形状的陶瓷基体。
优选地,所述步骤S2具体为:
首先,按照以下配比配置红外光光敏溶液并将各原料混合均匀后得到红外光光敏材料层混合物:
CdSeS 42%(重量百分比)
CdSe 30%(重量百分比)
CdS 27%(重量百分比)
过渡金属硝酸盐 1%(重量百分比)
所述的过渡金属硝酸盐为硝酸钪、硝酸钇和硝酸锆中的一种。
然后,将廉价紫外可见光响应光敏材料层混合物溶解在离子水中得到廉价紫外可见光响应光敏材料溶液,其中廉价紫外可见光响应光敏材料溶液中,廉价紫外可见光响应光敏材料层混合物的质量百分比为35%,离子水的质量百分比为65%。
优选地,所述步骤S3具体为:将步骤S2所得的廉价紫外可见光响应光敏材料溶液喷涂在陶瓷基体表面,喷涂5次,所述廉价紫外可见光响应光敏材料层厚度为4微米。
优选地,所述步骤S6具体为:将环氧树脂在步骤S2所得的高灵敏度紫外可见光光敏电阻主体表面,形成隔离层,所述隔离层厚度为5微米。
当在上述取值范围内取值时,利用上述给出的百分比制备的电阻灵敏度是最优的。而范围内的其他数值(包括端点值)的灵敏度仅次于上述公开的具体数值。
实际应用表明:
本发明提供一种廉价紫外可见光响应光敏电阻及其制备方法,利用廉价的过渡金属硝酸盐具有同稀土硝酸盐类似的化学特性,采用过渡金属硝酸盐替代稀土硝酸盐,通过在紫外可见光响应光敏电阻材料CdSeS、CdSe、CdS中掺杂质量百分比为1%的过渡金属硝酸盐,在降低紫外可见光响应光敏电阻生产成本的同时保证紫外可见光响应光敏电阻灵敏度损失较小,使紫外可见光响应光敏电阻灵敏度在可接受的范围内,利用本发明提供的制备方法所得廉价紫外可见光响应光敏电阻对波长在280 nm到670 nm之间的光具有较高的灵敏度,具有价格低廉、灵敏度高的双重优点。
最后应说明的是:以上所述仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (10)

1.用于制备低成本响应紫外可见光的光敏电阻的光敏材料,其特征在于,所述光敏材料由低成本紫外可见光响应光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成,所述低成本紫外可见光响应光敏溶液包括混合物和离子水,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
2.根据权利要求1所述的用于制备低成本响应紫外可见光的光敏电阻的光敏材料,其特征在于,所述过渡金属硝酸盐为硝酸钪、硝酸钇或硝酸锆中的任一种。
3.根据权利要求2所述的用于制备低成本响应紫外可见光的光敏电阻的光敏材料,其特征在于,所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
4.低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,包括以下步骤:
步骤1:制备陶瓷基体;
步骤2:配置低成本紫外可见光响应光敏溶液;
步骤3:将低成本紫外可见光响应光敏溶液喷涂在陶瓷基体的表面,形成低成本紫外可见光响应光敏材料层;
步骤4:将步骤3喷涂后的陶瓷基体静置10-30分钟后,放入900℃-1100℃恒温烘箱中烘烤10-30分钟;
步骤5:将两个电极安装在步骤4形成的低成本紫外可见光响应光敏材料层两端,得到低成本紫外可见光响应光敏电阻主体;
步骤6:在低成本紫外可见光响应光敏电阻主体表面喷涂隔离层,得到低成本紫外可见光响应光敏电阻主体。
5.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,步骤2中,所述低成本紫外可见光响应光敏溶液,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
6.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,所述步骤4具体为,将步骤3喷涂后的陶瓷基体静置20分钟后,放入1000℃恒温烘箱中烘烤20分钟。
7.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,所述陶瓷基体由纯度为90%以上的三氧化二铝材料制成。
8.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,步骤3具体为,将步骤S2低成本紫外可见光响应光敏材料溶液喷涂在陶瓷基体表面,喷涂5次,所述低成本紫外可见光响应光敏材料层厚度为4微米。
9.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,步骤6具体为,利用环氧树脂在低成本紫外可见光响应光敏电阻主体表面,形成隔离层,所述隔离层厚度为4微米。
10.根据权利要求5所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于, 所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述光敏材料溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
CN201710028593.6A 2017-01-16 2017-01-16 用于制备低成本响应紫外可见光的光敏电阻的光敏材料 Pending CN106847994A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710028593.6A CN106847994A (zh) 2017-01-16 2017-01-16 用于制备低成本响应紫外可见光的光敏电阻的光敏材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710028593.6A CN106847994A (zh) 2017-01-16 2017-01-16 用于制备低成本响应紫外可见光的光敏电阻的光敏材料

Publications (1)

Publication Number Publication Date
CN106847994A true CN106847994A (zh) 2017-06-13

Family

ID=59124153

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710028593.6A Pending CN106847994A (zh) 2017-01-16 2017-01-16 用于制备低成本响应紫外可见光的光敏电阻的光敏材料

Country Status (1)

Country Link
CN (1) CN106847994A (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102517024A (zh) * 2011-12-19 2012-06-27 武汉大学 一种CdSeS 量子点的水相微波制备方法
CN105206700A (zh) * 2015-10-09 2015-12-30 南阳师范学院 一种可见光光敏电阻及其制作方法
CN105336798A (zh) * 2015-10-09 2016-02-17 南阳师范学院 一种光敏电阻及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102517024A (zh) * 2011-12-19 2012-06-27 武汉大学 一种CdSeS 量子点的水相微波制备方法
CN105206700A (zh) * 2015-10-09 2015-12-30 南阳师范学院 一种可见光光敏电阻及其制作方法
CN105336798A (zh) * 2015-10-09 2016-02-17 南阳师范学院 一种光敏电阻及其制作方法

Similar Documents

Publication Publication Date Title
US20200403013A1 (en) Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and n-well regions
EP2511348A3 (en) Nacreous pigment with high chroma and multiple colors and method of preparing the same
CN105427977A (zh) 一种高性能直流氧化锌电阻片及其制备工艺
CN102617187A (zh) 一种在高温下生产黑色料陶瓷的制备工艺
CN109485413A (zh) 一种窄带隙钛酸铋钠-镍钛酸钡铁电材料及其制备方法和用途
CN106847994A (zh) 用于制备低成本响应紫外可见光的光敏电阻的光敏材料
CN103172406A (zh) 一种金斑天目釉及其制备工艺
CN109503149A (zh) 一种高折射率光学镀膜材料及制备方法、光学增透膜
CN106847995A (zh) 用于制备响应紫外可见光的光敏电阻的光敏材料
CN104591793B (zh) 一种彩色高级日用细瓷及其制备方法
CN106784065A (zh) 用于制备低成本宽谱带光敏电阻的光敏材料
CN103224413B (zh) 紫金釉的制作方法
CN108010991A (zh) 一种具有上转换功能的太阳电池背板、组件及制备方法
CN106847953A (zh) 用于制备高灵敏度响应紫外可见光的光敏电阻的光敏材料
CN108358449A (zh) 轻质瓷低温窑变红斑釉料的使用方法
CN106876506A (zh) 用于制备响应紫外可见光的光敏电阻的光敏材料
CN109694242A (zh) 一种适用于电饭煲、电压力锅陶瓷内胆的材料及其生产工艺
CN106784160A (zh) 制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法
CN102643076A (zh) 一种全烧结陶瓷滤芯
CN106784066A (zh) 制备掺杂稀土宽谱带光敏电阻的光敏材料
CN103183994B (zh) 迷彩降温涂层材料
CN108384541A (zh) 一种稀土掺杂氟化物基双向转换发光材料及其制备方法
CN108530053B (zh) 一种pH值敏感变色无机材料及其制备方法
CN108360289B (zh) 釉下小膜花纸用系列颜料及其制备方法
Steudel et al. Multi-functionality of luminescent glasses for energy applications

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170613