CN106847994A - 用于制备低成本响应紫外可见光的光敏电阻的光敏材料 - Google Patents
用于制备低成本响应紫外可见光的光敏电阻的光敏材料 Download PDFInfo
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- 230000004044 response Effects 0.000 title claims abstract description 75
- 239000000463 material Substances 0.000 title claims abstract description 49
- 229910002001 transition metal nitrate Inorganic materials 0.000 claims abstract description 22
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 21
- 239000011159 matrix material Substances 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 8
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 claims description 4
- DFCYEXJMCFQPPA-UHFFFAOYSA-N scandium(3+);trinitrate Chemical compound [Sc+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O DFCYEXJMCFQPPA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- -1 transition metal nitric acid Salt Chemical class 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 23
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 9
- 150000002910 rare earth metals Chemical class 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
本发明公开了用于制备低成本响应紫外可见光的光敏电阻的光敏材料,利用廉价的过渡金属硝酸盐具有同稀土硝酸盐类似的化学特性,采用过渡金属硝酸盐替代稀土硝酸盐,通过在紫外可见光响应光敏电阻材料CdSeS、CdSe、CdS中掺杂质量百分比为1%的过渡金属硝酸盐,在降低紫外可见光响应光敏电阻生产成本的同时保证紫外可见光响应光敏电阻灵敏度损失较小,使紫外可见光响应光敏电阻灵敏度在可接受的范围内,利用本发明提供的制备方法所得廉价紫外可见光响应光敏电阻对波长在280 nm到670 nm之间的光具有较高的灵敏度,具有价格低廉、灵敏度高的双重优点。
Description
技术领域
本发明涉及光敏电阻技术领域,具体地,涉及用于制备低成本可响应紫外可见光的光敏电阻的光敏材料。
背景技术
能够对可见光和近紫外光响应的紫外可见光响应光敏电阻广泛应用于光电检测控制系统,如紫外线探测器,成像型紫外告警和紫外制导等。目前,紫外可见光光敏电阻通常由附在陶瓷基体表面的光敏材料层电联两个电极组成,光敏电阻材料对紫外可见光光敏电阻的性能起决定性作用。现有紫外可见光响应光敏电阻材料多通过在对可见光敏感的CdS、CdSe混合物中掺入三元CdSeS量子点,利用三元CdSeS量子点的量子限域效应产生光谱蓝移,把光谱响应谱带扩展到近紫外光光谱。但是,现有紫外可见光响应光敏电阻材料主要存在的问题之一是:灵敏度低,难以满足现代光电检测控制系统对紫外可见光响应光敏电阻灵敏度的要求。国内外主要通过添加稀土硝酸盐材料来提高紫外可见光响应光敏电阻的灵敏度。虽然稀土硝酸盐材料大幅提高了紫外可见光响应光敏电阻的灵敏度,但是稀土硝酸盐材料价格昂贵,导致紫外可见光响应光敏电阻生产成本高,成为紫外可见光响应光敏电阻推广应用的难题。因此需要提供一种灵敏度高、价格便宜的紫外可见光响应光敏电阻,以满足光电检测控制系统对紫外可见光响应光敏电阻高灵敏度和廉价的双项要求。
发明内容
本发明的目的在于,针对上述问题,提出用于制备低成本响应紫外可见光的光敏电阻的光敏材料及该光敏电阻制备方法,以满足光电检测控制系统对紫外可见光响应光敏电阻高灵敏度和廉价的双项要求。
为实现上述目的,本发明采用的技术方案是:用于制备低成本 响应紫外可见光的光敏电阻的光敏材料,所述光敏材料由低成本紫外可见光响应光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成,所述低成本紫外可见光响应光敏溶液包括混合物和离子水,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
进一步地,所述过渡金属硝酸盐为硝酸钪、硝酸钇或硝酸锆中的任一种。
进一步地,所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
低成本可响应紫外可见光的光敏电阻的制备方法,包括以下步骤:
步骤1:制备陶瓷基体;
步骤2:配置低成本紫外可见光响应光敏溶液;
步骤3:将低成本紫外可见光响应光敏溶液喷涂在陶瓷基体的表面,形成低成本紫外可见光响应光敏材料层;
步骤4:将步骤3喷涂后的陶瓷基体静置10-30分钟后,放入900℃-1100℃恒温烘箱中烘烤10-30分钟;
步骤5:将两个电极安装在步骤4形成的低成本紫外可见光响应光敏材料层两端,得到低成本紫外可见光响应光敏电阻主体;
步骤6:在低成本紫外可见光响应光敏电阻主体表面喷涂隔离层,得到低成本紫外可见光响应光敏电阻主体。
进一步地,步骤2中,所述低成本紫外可见光响应光敏溶液,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
进一步地,所述步骤4具体为,将步骤3喷涂后的陶瓷基体静置20分钟后,放入1000℃恒温烘箱中烘烤20分钟。
进一步地,所述陶瓷基体由纯度为90%以上的三氧化二铝材料制成。
进一步地,步骤3具体为,将步骤S2低成本紫外可见光响应光敏材料溶液喷涂在陶瓷基体表面,喷涂5次,所述低成本紫外可见光响应光敏材料层厚度为4微米。
进一步地,步骤6具体为,利用环氧树脂在低成本紫外可见光响应光敏电阻主体表面,形成隔离层,所述隔离层厚度为4微米。
进一步地,所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述光敏材料溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
本发明各实施例的用于制备低成本响应紫外可见光的光敏电阻的光敏材料及该光敏电阻制备方法,利用廉价的过渡金属硝酸盐具有同稀土硝酸盐类似的化学特性,采用过渡金属硝酸盐替代稀土硝酸盐,通过在紫外可见光响应光敏电阻材料CdSeS、CdSe、CdS中掺杂质量百分比为1%的过渡金属硝酸盐,在降低紫外可见光响应光敏电阻生产成本的同时保证紫外可见光响应光敏电阻灵敏度损失较小,使紫外可见光响应光敏电阻灵敏度在可接受的范围内,利用本发明提供的制备方法所得廉价紫外可见光响应光敏电阻对波长在280nm到670 nm之间的光具有较高的灵敏度,具有价格低廉、灵敏度高的双重优点。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。
下面通过附图和实施例,对本发明的技术方案做进一步的详细描述。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。在附图中:
图1为本发明实施例所述的光敏电阻结构图。
结合附图,本发明实施例中附图标记如下:
1-陶瓷基体;2-光敏材料层;3-电极。
具体实施方式
以下结合附图对本发明的优选实施例进行说明,应当理解,此处所描述的优选实施例仅用于说明和解释本发明,并不用于限定本发明。
结合图1的结构,具体地,用于制备低成本可响应紫外可见光的光敏电阻的光敏材料,所述光敏材料由低成本紫外可见光响应光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成,所述低成本紫外可见光响应光敏溶液包括混合物和离子水,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
所述过渡金属硝酸盐为硝酸钪、硝酸钇或硝酸锆中的任一种。
所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
所述方法包括以下操作步骤:
S1,制备陶瓷基体;
S2,配置廉价紫外可见光响应光敏溶液;
S3,将廉价紫外可见光响应光敏溶液喷涂在陶瓷基体的表面,形成廉价紫外可见光响应光敏材料层;
S4,将喷涂后的陶瓷基体静置20分钟后,放入1000℃恒温烘箱中烘烤20分钟;
S5,将两个电极安装在形成廉价紫外可见光响应光敏材料层两端,得到廉价紫外可见光响应光敏电阻主体。
S6,在廉价紫外可见光响应光敏电阻主体表面喷涂隔离层,得到廉价紫外可见光响应光敏电阻。
优选地,所述步骤S1具体为:用纯度为90%以上的三氧化二铝材料制备所需形状的陶瓷基体。
优选地,所述步骤S2具体为:
首先,按照以下配比配置红外光光敏溶液并将各原料混合均匀后得到红外光光敏材料层混合物:
CdSeS 42%(重量百分比)
CdSe 30%(重量百分比)
CdS 27%(重量百分比)
过渡金属硝酸盐 1%(重量百分比)
所述的过渡金属硝酸盐为硝酸钪、硝酸钇和硝酸锆中的一种。
然后,将廉价紫外可见光响应光敏材料层混合物溶解在离子水中得到廉价紫外可见光响应光敏材料溶液,其中廉价紫外可见光响应光敏材料溶液中,廉价紫外可见光响应光敏材料层混合物的质量百分比为35%,离子水的质量百分比为65%。
优选地,所述步骤S3具体为:将步骤S2所得的廉价紫外可见光响应光敏材料溶液喷涂在陶瓷基体表面,喷涂5次,所述廉价紫外可见光响应光敏材料层厚度为4微米。
优选地,所述步骤S6具体为:将环氧树脂在步骤S2所得的高灵敏度紫外可见光光敏电阻主体表面,形成隔离层,所述隔离层厚度为5微米。
当在上述取值范围内取值时,利用上述给出的百分比制备的电阻灵敏度是最优的。而范围内的其他数值(包括端点值)的灵敏度仅次于上述公开的具体数值。
实际应用表明:
本发明提供一种廉价紫外可见光响应光敏电阻及其制备方法,利用廉价的过渡金属硝酸盐具有同稀土硝酸盐类似的化学特性,采用过渡金属硝酸盐替代稀土硝酸盐,通过在紫外可见光响应光敏电阻材料CdSeS、CdSe、CdS中掺杂质量百分比为1%的过渡金属硝酸盐,在降低紫外可见光响应光敏电阻生产成本的同时保证紫外可见光响应光敏电阻灵敏度损失较小,使紫外可见光响应光敏电阻灵敏度在可接受的范围内,利用本发明提供的制备方法所得廉价紫外可见光响应光敏电阻对波长在280 nm到670 nm之间的光具有较高的灵敏度,具有价格低廉、灵敏度高的双重优点。
最后应说明的是:以上所述仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.用于制备低成本响应紫外可见光的光敏电阻的光敏材料,其特征在于,所述光敏材料由低成本紫外可见光响应光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成,所述低成本紫外可见光响应光敏溶液包括混合物和离子水,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
2.根据权利要求1所述的用于制备低成本响应紫外可见光的光敏电阻的光敏材料,其特征在于,所述过渡金属硝酸盐为硝酸钪、硝酸钇或硝酸锆中的任一种。
3.根据权利要求2所述的用于制备低成本响应紫外可见光的光敏电阻的光敏材料,其特征在于,所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
4.低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,包括以下步骤:
步骤1:制备陶瓷基体;
步骤2:配置低成本紫外可见光响应光敏溶液;
步骤3:将低成本紫外可见光响应光敏溶液喷涂在陶瓷基体的表面,形成低成本紫外可见光响应光敏材料层;
步骤4:将步骤3喷涂后的陶瓷基体静置10-30分钟后,放入900℃-1100℃恒温烘箱中烘烤10-30分钟;
步骤5:将两个电极安装在步骤4形成的低成本紫外可见光响应光敏材料层两端,得到低成本紫外可见光响应光敏电阻主体;
步骤6:在低成本紫外可见光响应光敏电阻主体表面喷涂隔离层,得到低成本紫外可见光响应光敏电阻主体。
5.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,步骤2中,所述低成本紫外可见光响应光敏溶液,所述混合物由以下重量百分比的各组分组成:
CdSeS 32%-52%,CdSe 20%-40%,CdS 17%-37%,余量为过渡金属硝酸盐;
将混合物溶解在离子水中得到低成本紫外可见光响应光敏溶液,所述低成本紫外可见光响应光敏溶液中混合物与离子水的质量百分比为,混合物25%-45%,离子水55%-75%。
6.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,所述步骤4具体为,将步骤3喷涂后的陶瓷基体静置20分钟后,放入1000℃恒温烘箱中烘烤20分钟。
7.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,所述陶瓷基体由纯度为90%以上的三氧化二铝材料制成。
8.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,步骤3具体为,将步骤S2低成本紫外可见光响应光敏材料溶液喷涂在陶瓷基体表面,喷涂5次,所述低成本紫外可见光响应光敏材料层厚度为4微米。
9.根据权利要求4所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于,步骤6具体为,利用环氧树脂在低成本紫外可见光响应光敏电阻主体表面,形成隔离层,所述隔离层厚度为4微米。
10.根据权利要求5所述的低成本响应紫外可见光的光敏电阻的制备方法,其特征在于, 所述混合物各组分的重量百分比CdSeS 42%,CdSe 30%,CdS 27%,过渡金属硝酸盐1%;
所述光敏材料溶液中混合物与离子水的质量百分比为,混合物35%,离子水65%。
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