CN106784160A - 制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法 - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 46
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 17
- 238000001228 spectrum Methods 0.000 claims abstract description 16
- 229910021592 Copper(II) chloride Inorganic materials 0.000 claims abstract description 15
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 239000000919 ceramic Substances 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 20
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 15
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
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- 230000000694 effects Effects 0.000 abstract description 3
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- 230000008859 change Effects 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
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Abstract
本发明公开了制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法，通过向现有的对可见光敏感的光敏材料CdSe、CdCl2和CuCl2混合物中掺杂CdTe量子点，利用CdTe量子点的量子限域效应产生红移特性，把光谱响应谱带扩展到近红外光光谱。所制备宽光谱光敏电阻对波长在450nm到900 nm之间的光敏感，具有光谱响应谱带宽的优点。
Description
技术领域
本发明涉及光敏电阻技术领域，具体地，涉及制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法。
背景技术
光电探测器中经常使用光谱响应范围宽的光敏电阻，具有广泛的应用范围，如红外热成像及红外遥感等。目前，光敏电阻通常由附在陶瓷基体表面的红外光光敏材料层电联两个电极引线组成，光敏电阻材料对光敏电阻的光谱响应起决定性作用。现有，光敏电阻材料多使用CdS、CdSe和CdCl2混合配置，并添加CuCl2提高其灵敏性。但是，现有光敏电阻材料主要存在的问题之一是：光谱响应谱带窄，对近红外光不敏感。因此需要提供一种能够把光谱响应谱带扩展到近红外光光谱的宽光谱光敏电阻及其制备方法，以满足光电探测器对光敏电阻光谱响应范围宽的要求。
经文献检索，未发现与本发明技术方案相同的宽谱带光敏电阻及其制备方法的有关公开报道。
发明内容
本发明的目的在于，针对上述问题，提出制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法，以克服现有光敏电阻材料主要存在的问题：光谱响应谱带窄，对近红外光不敏感。
为实现上述目的，本发明采用的技术方案是：制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法，所述光敏材料由红外光光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成，所述红外光光敏溶液包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：
CdTe 35%-55%，CdSe 25%-45%，CdCl2 9%-29%，余量为CuCl2；
将混合物溶解在离子水中得到红外光光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物20%-40%，离子水60%-80%。
进一步地，所述混合物各组分的重量百分比CdTe 45%，CdSe 35%， CdCl2 19%，CuCl2 1% ；
所述红外光光敏溶液中混合物与离子水的质量百分比为，混合物30%，离子水70%。
宽谱带光敏电阻的制备方法，包括以下步骤：
步骤1：制备陶瓷基体；
步骤2：配置红外光光敏溶液；
步骤3：将红外光光敏溶液喷涂在陶瓷基体的表面，形成红外光光敏材料层；
步骤4：将步骤3喷涂后的陶瓷基体静置10-30分钟后，放入900℃-1100℃恒温烘箱中烘烤10-30分钟；
步骤5：将两个电极安装在步骤4形成的红外光光敏材料层两端，得到光敏电阻主体；
步骤6：在光敏电阻主体表面喷涂隔离层，得到光敏电阻。
进一步地，步骤2中，所述红外光光敏溶液，包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：
CdTe 35%-55%，CdSe 25%-45%，CdCl2 9%-29%，余量为CuCl2；
将混合物溶解在离子水中得到红外光光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物20%-40%，离子水60%-80%。
进一步地，所述步骤4具体为，将步骤3喷涂后的陶瓷基体静置20分钟后，放入1000℃恒温烘箱中烘烤20分钟。
进一步地，所述陶瓷基体由纯度为90%以上的三氧化二铝材料制成。
进一步地，步骤3具体为，将步骤S2所得的红外光光敏溶液喷涂在陶瓷基体表面，喷涂5次，所述低成本宽谱带光敏材料层厚度为6微米。
进一步地，步骤6具体为，利用环氧树脂在光敏电阻主体表面，形成隔离层，所述隔离层厚度为4微米。
进一步地，所述混合物各组分的重量百分比CdTe 45%，CdSe 35%， CdCl2 19%，CuCl2 1% ；
所述红外光光敏溶液中混合物与离子水的质量百分比为，混合物30%，离子水70%。
本发明各实施例的用于制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法，通过向现有的对可见光敏感的光敏材料CdSe、CdCl2和CuCl2混合物中掺杂CdTe量子点，利用CdTe量子点的量子限域效应产生红移特性，把光谱响应谱带扩展到近红外光光谱。所制备宽光谱光敏电阻对波长在450nm到900 nm之间的光敏感，具有光谱响应谱带宽的优点。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。
下面通过附图和实施例，对本发明的技术方案做进一步的详细描述。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。在附图中：
图1为本发明实施例所述的光敏电阻结构图。
结合附图，本发明实施例中附图标记如下：
1-陶瓷基体；2-光敏材料层；3-电极。
具体实施方式
以下结合附图对本发明的优选实施例进行说明，应当理解，此处所描述的优选实施例仅用于说明和解释本发明，并不用于限定本发明。
结合图1的结构，具体地，制备宽谱带光敏电阻的光敏材料，所述光敏材料由红外光光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成，所述红外光光敏溶液包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：
CdTe 35%-55%，CdSe 25%-45%，CdCl2 9%-29%，余量为CuCl2；
将混合物溶解在离子水中得到红外光光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物20%-40%，离子水60%-80%。
进一步地，所述混合物各组分的重量百分比CdTe 45%，CdSe 35%， CdCl2 19%，CuCl2 1% ；
所述红外光光敏溶液中混合物与离子水的质量百分比为，混合物30%，离子水70%。；
所述方法包括以下操作步骤：
S1，制备陶瓷基体；
S2，配置红外光光敏溶液；
S3，将红外光光敏溶液喷涂在陶瓷基体的表面，形成红外光光敏材料层；
S4，将喷涂后的陶瓷基体静置20分钟后，放入1000℃恒温烘箱中烘烤20分钟；
S5，将两个电极安装在形成红外光光敏材料层两端，得到光敏电阻主体。
S6，在光敏电阻主体表面喷涂隔离层，得到光敏电阻。
优选地，所述步骤S1具体为：用纯度为90%以上的三氧化二铝材料制备所需形状的陶瓷基体。
优选地，所述步骤S2具体为：
首先，按照以下配比配置红外光光敏溶液并将各原料混合均匀后得到红外光光敏材料层混合物：
CdTe 45%（重量百分比）
CdSe 35%（重量百分比）
CdCl2 19%（重量百分比）
CuCl2 1%（重量百分比）
然后，将红外光光敏材料层混合物溶解在离子水中得到红外光光敏材料溶液，其中红外光光敏材料溶液中，红外光光敏材料层混合物的质量百分比为30%，离子水的质量百分比为70%。
优选地，所述步骤S3具体为：将步骤S2所得的红外光光敏材料溶液喷涂在陶瓷基体表面，喷涂5次，所述红外光光敏材料层厚度为6微米。
优选地，所述步骤S6具体为：将环氧树脂在步骤S2所得的光敏电阻主体表面，形成隔离层，所述隔离层厚度为4微米。
在上述取值范围内取值时，利用上述给出的百分比制备的电阻灵敏度是最优的。而范围内的其他数值（包括端点值）的灵敏度仅次于上述公开的具体数值。
实际应用表明：
本发明提供的一种宽光谱光敏电阻及其制备方法，通过向现有的对可见光敏感的光敏材料CdSe、CdCl2和CuCl2混合物中掺杂CdTe量子点，利用CdTe量子点的量子限域效应产生红移特性，把光谱响应谱带扩展到近红外光光谱。所制备宽光谱光敏电阻对波长在450nm到900 nm之间的光敏感，具有光谱响应谱带宽的优点。
最后应说明的是：以上所述仅为本发明的优选实施例而已，并不用于限制本发明，尽管参照前述实施例对本发明进行了详细的说明，对于本领域的技术人员来说，其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (9)
1.制备宽谱带光敏电阻的光敏材料，其特征在于，所述光敏材料由红外光光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成，所述红外光光敏溶液包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：
CdTe 35%-55%，CdSe 25%-45%，CdCl2 9%-29%，余量为CuCl2；
将混合物溶解在离子水中得到红外光光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物20%-40%，离子水60%-80%。
2.根据权利要求1所述的制备宽谱带光敏电阻的光敏材料，其特征在于，所述混合物各组分的重量百分比CdTe 45%，CdSe 35%， CdCl2 19%， CuCl2 1% ；
所述红外光光敏溶液中混合物与离子水的质量百分比为，混合物30%，离子水70%。
3.宽谱带光敏电阻的制备方法，其特征在于，包括以下步骤：
步骤1：制备陶瓷基体；
步骤2：配置红外光光敏溶液；
步骤3：将红外光光敏溶液喷涂在陶瓷基体的表面，形成红外光光敏材料层；
步骤4：将步骤3喷涂后的陶瓷基体静置10-30分钟后，放入900℃-1100℃恒温烘箱中烘烤10-30分钟；
步骤5：将两个电极安装在步骤4形成的红外光光敏材料层两端，得到光敏电阻主体；
步骤6：在光敏电阻主体表面喷涂隔离层，得到光敏电阻。
4.根据权利要求3所述的宽谱带光敏电阻的制备方法，其特征在于，步骤2中，所述红外光光敏溶液，包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：
CdTe 35%-55%，CdSe 25%-45%，CdCl2 9%-29%，余量为CuCl2；
将混合物溶解在离子水中得到红外光光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物20%-40%，离子水60%-80%。
5.根据权利要求3所述的宽谱带光敏电阻的制备方法，其特征在于，所述步骤4具体为，将步骤3喷涂后的陶瓷基体静置20分钟后，放入1000℃恒温烘箱中烘烤20分钟。
6.根据权利要求3所述的宽谱带光敏电阻的制备方法，其特征在于，所述陶瓷基体由纯度为90%以上的三氧化二铝材料制成。
7.根据权利要求3所述的宽谱带光敏电阻的制备方法，其特征在于，步骤3具体为，将步骤S2所得的红外光光敏溶液喷涂在陶瓷基体表面，喷涂5次，所述低成本宽谱带光敏材料层厚度为6微米。
8.根据权利要求3所述的宽谱带光敏电阻的制备方法，其特征在于，步骤6具体为，利用环氧树脂在光敏电阻主体表面，形成隔离层，所述隔离层厚度为4微米。
9.根据权利要求4所述的宽谱带光敏电阻的制备方法，其特征在于, 所述混合物各组分的重量百分比CdTe 45%，CdSe 35%， CdCl2 19%， CuCl2 1% ；
所述红外光光敏溶液中混合物与离子水的质量百分比为，混合物30%，离子水70%。
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