CN106841970B - Apd的调试方法 - Google Patents
Apd的调试方法 Download PDFInfo
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- CN106841970B CN106841970B CN201710120542.6A CN201710120542A CN106841970B CN 106841970 B CN106841970 B CN 106841970B CN 201710120542 A CN201710120542 A CN 201710120542A CN 106841970 B CN106841970 B CN 106841970B
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000035945 sensitivity Effects 0.000 claims abstract description 15
- 230000015556 catabolic process Effects 0.000 claims abstract description 13
- 238000012360 testing method Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000003287 optical effect Effects 0.000 abstract description 6
- 101150098161 APD1 gene Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
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CN201710120542.6A CN106841970B (zh) | 2017-03-02 | 2017-03-02 | Apd的调试方法 |
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CN201710120542.6A CN106841970B (zh) | 2017-03-02 | 2017-03-02 | Apd的调试方法 |
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CN106841970A CN106841970A (zh) | 2017-06-13 |
CN106841970B true CN106841970B (zh) | 2020-09-11 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109031059B (zh) * | 2018-06-25 | 2021-01-19 | 南京大学 | 一种新型碳化硅雪崩二极管阵列良率及击穿电压测试方法 |
CN109633404B (zh) * | 2019-01-17 | 2020-10-27 | 金陵科技学院 | 一种基于pxi的雪崩光电探测器电学特性测试系统 |
CN109596965B (zh) * | 2019-01-17 | 2021-05-07 | 四川天邑康和通信股份有限公司 | 一种判断10g epon的雪崩光电二极管apd最佳工作电压的方法 |
CN110488174B (zh) * | 2019-08-26 | 2021-05-04 | 上海禾赛科技股份有限公司 | 光电二极管的击穿电压测试 |
US11733296B2 (en) | 2020-04-17 | 2023-08-22 | Honeywell Federal Manufacturing & Technologies, Llc | Screening method for pin diodes used in microwave limiters |
CN111693842B (zh) * | 2020-07-07 | 2022-09-23 | 吉林华微电子股份有限公司 | 二极管雪崩击穿能力测试系统 |
CN112578253B (zh) * | 2020-11-23 | 2022-03-08 | 深圳市迅特通信技术股份有限公司 | 一种多通道芯片老化系统及方法 |
CN112702021B (zh) * | 2020-12-10 | 2023-02-24 | 上海禾赛科技有限公司 | 获取光电二极管的击穿电压的电路及方法 |
CN114814517B (zh) * | 2022-06-27 | 2022-09-13 | 杭州宇称电子技术有限公司 | 芯片内部spad单点雪崩电压的测量方法及其应用 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2008020203A (ja) * | 2006-07-10 | 2008-01-31 | Omron Corp | レーダ装置 |
CN200950235Y (zh) * | 2006-09-25 | 2007-09-19 | 深圳飞通光电子技术有限公司 | 雪崩光电二极管的温度补偿偏压电路 |
CN101977023B (zh) * | 2010-09-02 | 2012-07-04 | 索尔思光电(成都)有限公司 | 一种雪崩二极管的调试和补偿方法 |
WO2013111286A1 (ja) * | 2012-01-25 | 2013-08-01 | 三菱電機株式会社 | 光受信器、局側光終端装置および受光レベルモニタ方法 |
CN202548286U (zh) * | 2012-04-23 | 2012-11-21 | 北京航天时代光电科技有限公司 | 雪崩光电二极管探测电路 |
CN104142460B (zh) * | 2013-05-09 | 2018-08-03 | 深圳市共进电子股份有限公司 | 雪崩光电二极管最佳工作电压的测试方法 |
CN103389451B (zh) * | 2013-07-24 | 2015-12-02 | 广东瑞谷光纤通信有限公司 | 一种雪崩光电二极管的测试方法及测试装置 |
CN203688801U (zh) * | 2014-01-15 | 2014-07-02 | 东莞新创力盈富电子有限公司 | 一种带增益控制电路的激光测距装置 |
CN205594129U (zh) * | 2016-04-27 | 2016-09-21 | 索尔思光电(成都)有限公司 | 一种雪崩光电二极管故障监测电路 |
CN105954662B (zh) * | 2016-06-18 | 2017-04-12 | 温州大学 | 一种功率二极管反向击穿电压分级测试装置 |
CN106249798B (zh) * | 2016-07-29 | 2017-08-25 | 四川天邑康和通信股份有限公司 | 一种用于gpon光猫中apd的灵敏度调试系统及方法 |
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