CN105954662B - 一种功率二极管反向击穿电压分级测试装置 - Google Patents
一种功率二极管反向击穿电压分级测试装置 Download PDFInfo
- Publication number
- CN105954662B CN105954662B CN201610443741.6A CN201610443741A CN105954662B CN 105954662 B CN105954662 B CN 105954662B CN 201610443741 A CN201610443741 A CN 201610443741A CN 105954662 B CN105954662 B CN 105954662B
- Authority
- CN
- China
- Prior art keywords
- master controller
- power diode
- measured power
- circuit
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/14—Circuits therefor, e.g. for generating test voltages, sensing circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610443741.6A CN105954662B (zh) | 2016-06-18 | 2016-06-18 | 一种功率二极管反向击穿电压分级测试装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610443741.6A CN105954662B (zh) | 2016-06-18 | 2016-06-18 | 一种功率二极管反向击穿电压分级测试装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105954662A CN105954662A (zh) | 2016-09-21 |
CN105954662B true CN105954662B (zh) | 2017-04-12 |
Family
ID=56907094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610443741.6A Active CN105954662B (zh) | 2016-06-18 | 2016-06-18 | 一种功率二极管反向击穿电压分级测试装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105954662B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106841970B (zh) * | 2017-03-02 | 2020-09-11 | 成都优博创通信技术股份有限公司 | Apd的调试方法 |
CN107774590B (zh) * | 2017-10-31 | 2019-08-20 | 南通皋鑫电子股份有限公司 | 一种高压二极管管芯筛选系统 |
CN109492324B (zh) * | 2018-11-25 | 2020-11-17 | 西北工业大学 | 基于载波的d类放大器双积分滑模控制器设计方法及电路 |
CN109444552B (zh) * | 2018-11-28 | 2021-12-28 | 航天新长征大道科技有限公司 | 一种火工品电阻测试装置和火工品电阻测试方法 |
CN111426927B (zh) * | 2018-12-24 | 2022-06-21 | 东南大学 | 一种功率半导体器件动态电学应力施加装置及测试方法 |
CN109696617B (zh) * | 2019-02-13 | 2024-05-07 | 中国科学院半导体研究所 | 电信号侦测电路和装置 |
US11733296B2 (en) | 2020-04-17 | 2023-08-22 | Honeywell Federal Manufacturing & Technologies, Llc | Screening method for pin diodes used in microwave limiters |
CN113030676B (zh) * | 2021-02-26 | 2023-03-24 | 赛英特半导体技术(西安)有限公司 | 一种基于临近颗粒法的二极管三极管晶圆测试方法 |
CN116699568B (zh) * | 2023-07-28 | 2024-01-12 | 中测国检(北京)科技有限责任公司 | 一种基于雪崩二极管的测距频率检测用光电转换装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09269354A (ja) * | 1996-04-02 | 1997-10-14 | Fuji Electric Co Ltd | 半導体素子のオフ動作特性試験方法 |
CN101109783A (zh) * | 2006-07-18 | 2008-01-23 | 杨少辰 | 一种发光二极管的电性参数测试电路 |
CN103048600B (zh) * | 2012-12-05 | 2014-12-24 | 电子科技大学 | 一种半导体器件反向击穿电压测试系统 |
CN103389451B (zh) * | 2013-07-24 | 2015-12-02 | 广东瑞谷光纤通信有限公司 | 一种雪崩光电二极管的测试方法及测试装置 |
CN104297657B (zh) * | 2014-10-22 | 2016-04-27 | 温州大学 | 数字化大功率微波二极管反向动态波形及损耗功率测试系统 |
-
2016
- 2016-06-18 CN CN201610443741.6A patent/CN105954662B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN105954662A (zh) | 2016-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105954662B (zh) | 一种功率二极管反向击穿电压分级测试装置 | |
CN106154134B (zh) | 一种晶闸管四象限触发特性参数测试装置 | |
CN103713784B (zh) | 电容式触摸检测电路、装置及其防污渍致误识别的方法 | |
CN102680903B (zh) | 便携式蓄电池状态检测系统的检测方法 | |
CN102928727B (zh) | 开路检测装置、电路以及方法 | |
CN201053983Y (zh) | 一种便携式通用数字存储示波器 | |
CN202693754U (zh) | 一种用于测试模拟集成电路与器件的装置 | |
CN101013142A (zh) | 一种便携式通用数字存储示波器 | |
CN103440073B (zh) | 排除寄生电容影响的电容感测电路 | |
CN106802372B (zh) | 一种检测电容容值变化的方法 | |
CN206074772U (zh) | 手持或车载全自动智能型的电池检测系统 | |
CN108120919A (zh) | 一种集成电路时间参数测试电路及方法 | |
CN206369789U (zh) | 一种多功能数字芯片测试仪 | |
CN105092637B (zh) | 一种半导体功率器件瞬态热阻测试装置及方法 | |
CN109702280A (zh) | 一种小型电火花加工装置的控制系统 | |
CN109282856A (zh) | 一种同时检测温度/电压/电流信号的单芯片传感器 | |
CN105158573B (zh) | 一种电池组内阻检测电路及电池组内阻检测方法及装置 | |
CN106932731A (zh) | 一种串联蓄电池组中各蓄电池内阻的检测方法 | |
CN204330998U (zh) | 用于电池组的电池老化检测仪和电池老化检测系统 | |
CN203788304U (zh) | 硬件接口功能测试装置 | |
CN104049118B (zh) | 以趋势图显示波形测量参数的示波器 | |
CN109656122A (zh) | 基于鉴相鉴频器和真有效值转换器的高精度脉冲时间间隔测量方法与电路 | |
CN208595999U (zh) | 一种力传感器检定装置 | |
CN107329879A (zh) | 电压监控电路与电压监控方法 | |
CN206161821U (zh) | 多状态电池电量监测仪表 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180108 Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Longsheng Gold Dragon Road community e-commerce incubator exhibition Tao Commercial Plaza E block 706 Patentee after: Shenzhen Meliao Technology Transfer Center Co.,Ltd. Address before: 325000 Zhejiang, Ouhai, South East Road, No. 38, Wenzhou National University Science Park Incubator Patentee before: Wenzhou University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180426 Address after: 515426 Jieyang County, Guangdong province Jiexi town Longtan Town, the village under the ridge. Patentee after: JIEYANG SHENKE ELECTRONIC CO.,LTD. Address before: 518000 Guangdong Shenzhen Longhua New District big wave street Longsheng community Tenglong road gold rush e-commerce incubation base exhibition hall E commercial block 706 Patentee before: Shenzhen Meliao Technology Transfer Center Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 515426 Jieyang County, Guangdong province Jiexi town Longtan Town, the village under the ridge. Patentee after: Guangdong Shenke Electronics Co.,Ltd. Address before: 515426 Jieyang County, Guangdong province Jiexi town Longtan Town, the village under the ridge. Patentee before: JIEYANG SHENKE ELECTRONIC CO.,LTD. |
|
CP01 | Change in the name or title of a patent holder |