CN106835287A - A kind of polycrystalline silicon ingot casting rta technique - Google Patents
A kind of polycrystalline silicon ingot casting rta technique Download PDFInfo
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- CN106835287A CN106835287A CN201710145698.XA CN201710145698A CN106835287A CN 106835287 A CN106835287 A CN 106835287A CN 201710145698 A CN201710145698 A CN 201710145698A CN 106835287 A CN106835287 A CN 106835287A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract
A kind of polycrystalline silicon ingot casting rta technique, silicon material enters annealing and cools down after the heating in casting ingot process, fusing, crystalline substance operation long, and wherein annealing time is 60 ~ 120min, and mode of heating is divided into Power Control and temperature control, and heat-insulation cage aperture is 5 ~ 17mm；The Power Control of described mode of heating is 0 ~ 25%, and temperature control is 1350 ~ 1400 DEG C；Described annealing is divided into four steps, and A1, A2, A3 and A4 are designated as respectively.By changing mode of heating and heat-insulation cage aperture, in the case where crystal ingot afterbody stress is not increased, realize the annealing cooling to crystal ingot head, and crystal ingot is reduced in the high annealing time, the present invention is more normal, and the casting ingot process time shortens 67 ~ 176min, energy consumption reduces 68 ~ 102Kw h, and earning rate improves 1.44 ~ 1.98%.Present invention process is reasonable in design, simple to operate, can not only reduce the ingot casting time, save energy consumption, and can lift crystal ingot quality and production efficiency.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon ingot casting rta technique.
Background technology
With the exhausted and ever-increasing energy demand of the mankind of non-renewable resources on the earth, as cleaning, low-carbon (LC), ring
The solar energy of the renewable resource of guarantor is more and more favored, and thus brings developing rapidly and demand for photovoltaic industry
It is continuously increased.However, due to manufacture of solar cells high cost, therefore, not by large-scale popularization and application.Reduce life
Cost is produced, the common objective pursued as enterprise is improved production efficiency and product quality.
Polycrystal silicon ingot production procedure is to enter annealing after heated silicon material, fusing, crystalline substance operation long to cool down, and it is release to anneal
The process of the stress inside silicon ingot, and the defects such as the dislocation produced during certain crystalline substance long can also be eliminated.Generally
The way of annealing is to close heat-insulation cage to rise to 1200 DEG C from 1000 DEG C by crystal ingot tail temperature, reduces crystal ingot head and afterbody
The temperature difference, and 2 ~ 3h is incubated at high temperature.Because crystal ingot afterbody passes through prolonged annealing during crystalline substance long, and close every
Hot cage is heated up to afterbody, easily causes the risk of afterbody stress concentration, and so as to cause, the decortication of afterbody evolution is hidden to be split；And high temperature it is long when
Between insulation promote impurity high temperature solid-state diffusion, increase red sector length, reduce average minority carrier lifetime.
The content of the invention
Its purpose of the invention is that a kind of polycrystalline silicon ingot casting rta technique of offer, changes conventional anneal process mistake
Crystal ingot afterbody is heated up in journey reduce head and tail temperature difference and the technique in the treatment of high temperature long-time heat preservation, is more reasonably moved back
Fire, its processing step is simple, using effect is good, have good promotional value.
The technical scheme realized above-mentioned purpose and take, a kind of polycrystalline silicon ingot casting rta technique, silicon material is through pourer
Enter annealing after heating, fusing, crystalline substance operation long in skill to cool down, the annealing time of the annealing cooling is 60 ~ 120min, annealing
The mode of heating of cooling includes Power Control and temperature control, and the Power Control of described mode of heating is 0 ~ 25%, and described adds
The temperature control of hot mode is 1350 ~ 1400 DEG C；Described annealing is cooled in being carried out in polycrystalline silicon ingot or purifying furnace, polycrystalline silicon ingot or purifying furnace
In heat-insulation cage aperture be 5 ~ 17mm；
Described annealing cooling includes four steps, and cooling A1, cooling A2, cooling A3 and cooling A4 are designated as respectively；
The described cooling A1 times are 0 ~ 30min, and mode of heating is temperature control, and TC1 temperature is 1390 ~ 1400 DEG C, heat-insulation cage
Aperture is 10 ~ 17mm；
The described cooling A2 times are 10 ~ 30min, and mode of heating is temperature control, and TC1 temperature is 1350 ~ 1370 DEG C, heat-insulation cage
Aperture is 10 ~ 17mm.
The described cooling A3 times are 10 ~ 30min, and mode of heating is Power Control, and heating power is 0 ~ 25%, heat-insulation cage
Aperture is 5 ~ 14mm.
The described cooling A4 times are 10 ~ 30min, and mode of heating is Power Control, and heating power is 0 ~ 10%, heat-insulation cage
Aperture is 5 ~ 14mm.
Beneficial effect
The present invention has advantages below compared with prior art.
Present invention has the advantage that crystal ingot afterbody is heated up during changing conventional anneal process reduce head and tail temperature difference
With the technique processed in high temperature long-time heat preservation, more reasonably annealed, shorten ingot casting time, reducing energy consumption and improve brilliant
Ingot quality, easily realizes in large-scale production, advantageously reduces production cost and improve production efficiency.
Specific embodiment
A kind of polycrystalline silicon ingot casting rta technique, silicon material enters after the heating in casting ingot process, fusing, crystalline substance operation long
Annealing cooling, the annealing time of the annealing cooling is 60 ~ 120min, and the mode of heating of cooling of annealing includes Power Control and temperature
Degree control, the Power Control of described mode of heating is 0 ~ 25%, and the temperature control of described mode of heating is 1350 ~ 1400 DEG C；
Described annealing is cooled in being carried out in polycrystalline silicon ingot or purifying furnace, and the heat-insulation cage aperture in polycrystalline silicon ingot or purifying furnace is 5 ~ 17mm；
Described annealing cooling includes four steps, and cooling A1, cooling A2, cooling A3 and cooling A4 are designated as respectively；
The described cooling A1 times are 0 ~ 30min, and mode of heating is temperature control, and TC1 temperature is 1390 ~ 1400 DEG C, heat-insulation cage
Aperture is 10 ~ 17mm；
The described cooling A2 times are 10 ~ 30min, and mode of heating is temperature control, and TC1 temperature is 1350 ~ 1370 DEG C, heat-insulation cage
Aperture is 10 ~ 17mm；
The described cooling A3 times are 10 ~ 30min, and mode of heating is Power Control, and heating power is 0 ~ 25%, heat-insulation cage aperture
It is 5 ~ 14mm；
The described cooling A4 times are 10 ~ 30min, and mode of heating is Power Control, and heating power is 0 ~ 10%, heat-insulation cage aperture
It is 5 ~ 14mm.
Embodiment 1
A kind of polycrystalline silicon ingot casting rta technique, silicon material enters annealing after the heating in casting ingot process, fusing, crystalline substance operation long
Cooling, wherein annealing cooling is divided into four steps, respectively cools down A1, cooling A2, cooling A3 and cooling A4.
The cooling A1 times are 0min, and mode of heating is temperature control, and TC1 temperature is 1400 DEG C, and heat-insulation cage aperture is 15mm.
The cooling A2 times are 20min, and mode of heating is temperature control, and TC1 temperature is 1400 DEG C, and heat-insulation cage aperture is
15mm。
The cooling A3 times are 20min, and mode of heating is Power Control, and heating power is 25%, and heat-insulation cage aperture is 15mm.
The cooling A4 times are 20min, and mode of heating is Power Control, and heating power is 10%, and heat-insulation cage aperture is 14mm.
It is computed and verifies, the ingot casting time shortens 157min than normal process, energy consumption reduction 102Kw h, earning rate is improved
1.98%。
Embodiment 2
Silicon material enters annealing and cools down after the heating in casting ingot process, fusing, crystalline substance operation long, wherein annealing cooling is divided into four steps
Suddenly, respectively cooling A1, cooling A2, cooling A3 and cooling A4.
The cooling A1 times are 10min, and mode of heating is temperature control, and TC1 temperature is 1400 DEG C, and heat-insulation cage aperture is
10mm。
The cooling A2 times are 10min, and mode of heating is temperature control, and TC1 temperature is 1370 DEG C, and heat-insulation cage aperture is
10mm。
The cooling A3 times are 30min, and mode of heating is Power Control, and heating power is 10%, and heat-insulation cage aperture is 8mm.
The cooling A4 times are 30min, and mode of heating is Power Control, and heating power is 0%, and heat-insulation cage aperture is 5mm.
It is computed and verifies, the ingot casting time shortens 68min than normal process, energy consumption reduction 87Kw h, earning rate is improved
1.57%。
Embodiment 3
Silicon material enters annealing and cools down after the heating in casting ingot process, fusing, crystalline substance operation long, wherein annealing cooling is divided into four steps
Suddenly, respectively cooling A1, cooling A2, cooling A3 and cooling A4.
The cooling A1 times are 20min, and mode of heating is temperature control, and TC1 temperature is 1390 DEG C, and heat-insulation cage aperture is
16mm。
The cooling A2 times are 20min, and mode of heating is temperature control, and TC1 temperature is 1370 DEG C, and heat-insulation cage aperture is
14mm。
The cooling A3 times are 20min, and mode of heating is Power Control, and heating power is 15%, and heat-insulation cage aperture is 12mm.
The cooling A4 times are 10min, and mode of heating is Power Control, and heating power is 10%, and heat-insulation cage aperture is 12mm.
It is computed and verifies, the ingot casting time shortens 176 than normal process, and energy consumption reduction 74Kw h, earning rate is improved
1.76%。
Embodiment 4
Silicon material enters annealing and cools down after the heating in casting ingot process, fusing, crystalline substance operation long, wherein annealing cooling is divided into four steps
Suddenly, respectively cooling A1, cooling A2, cooling A3 and cooling A4.
The cooling A1 times are 20min, and mode of heating is temperature control, and TC1 temperature is 1400 DEG C, and heat-insulation cage aperture is
12mm。
The cooling A2 times are 20min, and mode of heating is temperature control, and TC1 temperature is 1360 DEG C, and heat-insulation cage aperture is
12mm。
The cooling A3 times are 20min, and mode of heating is Power Control, and heating power is 0%, and heat-insulation cage aperture is 7mm.
The cooling A4 times are 20min, and mode of heating is Power Control, and heating power is 0%, and heat-insulation cage aperture is 5mm.
It is computed and verifies, the ingot casting time shortens 98min than normal process, energy consumption reduction 93Kw h, earning rate is improved
1.61%。
Embodiment 5
Silicon material enters annealing and cools down after the heating in casting ingot process, fusing, crystalline substance operation long, wherein annealing cooling is divided into four steps
Suddenly, respectively cooling A1, cooling A2, cooling A3 and cooling A4.
The cooling A1 times are 30min, and mode of heating is temperature control, and TC1 temperature is 1390 DEG C, and heat-insulation cage aperture is
12mm。
The cooling A2 times are 20min, and mode of heating is temperature control, and TC1 temperature is 1370 DEG C, and heat-insulation cage aperture is
12mm。
The cooling A3 times are 10min, and mode of heating is Power Control, and heating power is 15%, and heat-insulation cage aperture is 10mm.
The cooling A4 times are 10min, and mode of heating is Power Control, and heating power is 8%, and heat-insulation cage aperture is 10mm.
It is computed and verifies, the ingot casting time shortens 136min than normal process, energy consumption reduction 81Kw h, earning rate is improved
1.83%。
Embodiment 6
Silicon material enters annealing and cools down after the heating in casting ingot process, fusing, crystalline substance operation long, wherein annealing cooling is divided into four steps
Suddenly, respectively cooling A1, cooling A2, cooling A3 and cooling A4.
The cooling A1 times are 30min, and mode of heating is temperature control, and TC1 temperature is 1390 DEG C, and heat-insulation cage aperture is
17mm。
The cooling A2 times are 30min, and mode of heating is temperature control, and TC1 temperature is 1350 DEG C, and heat-insulation cage aperture is
17mm。
The cooling A3 times are 30min, and mode of heating is Power Control, and heating power is 25%, and heat-insulation cage aperture is 14mm.
The cooling A4 times are 30min, and mode of heating is Power Control, and heating power is 10%, and heat-insulation cage aperture is 14mm.
It is computed and verifies, the ingot casting time shortens 84min than normal process, energy consumption reduction 68Kw h, earning rate is improved
1.44%。
Claims (1)
1. a kind of polycrystalline silicon ingot casting rta technique, silicon material enters after the heating in casting ingot process, fusing, crystalline substance operation long moves back
Fire cooling, it is characterised in that the annealing time of the annealing cooling is 60 ~ 120min, and the mode of heating of cooling of annealing includes work(
Rate is controlled and temperature control, and the Power Control of described mode of heating is 0 ~ 25%, and the temperature control of described mode of heating is
1350~1400℃；Described annealing is cooled in being carried out in polycrystalline silicon ingot or purifying furnace, the heat-insulation cage aperture in polycrystalline silicon ingot or purifying furnace be 5 ~
17mm；
Described annealing cooling includes four steps, and cooling A1, cooling A2, cooling A3 and cooling A4 are designated as respectively；
The described cooling A1 times are 0 ~ 30min, and mode of heating is temperature control, and TC1 temperature is 1390 ~ 1400 DEG C, heat-insulation cage
Aperture is 10 ~ 17mm；
The described cooling A2 times are 10 ~ 30min, and mode of heating is temperature control, and TC1 temperature is 1350 ~ 1370 DEG C, heat-insulation cage
Aperture is 10 ~ 17mm；
The described cooling A3 times are 10 ~ 30min, and mode of heating is Power Control, and heating power is 0 ~ 25%, heat-insulation cage aperture
It is 5 ~ 14mm；
The described cooling A4 times are 10 ~ 30min, and mode of heating is Power Control, and heating power is 0 ~ 10%, heat-insulation cage aperture
It is 5 ~ 14mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710145698.XA CN106835287A (en) | 2017-03-13 | 2017-03-13 | A kind of polycrystalline silicon ingot casting rta technique |
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| CN201710145698.XA CN106835287A (en) | 2017-03-13 | 2017-03-13 | A kind of polycrystalline silicon ingot casting rta technique |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305924A (en) * | 2013-06-24 | 2013-09-18 | 英利集团有限公司 | Method for reducing dislocation of crystal inside silicon ingot in ingot casting process |
| CN103741214A (en) * | 2014-01-28 | 2014-04-23 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon ingot casting process |
| CN104213191A (en) * | 2014-08-28 | 2014-12-17 | 北京京仪集团涿鹿光伏材料有限公司 | Semi-melting high-efficiency polycrystalline silicon ingot casting process |
-
2017
- 2017-03-13 CN CN201710145698.XA patent/CN106835287A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305924A (en) * | 2013-06-24 | 2013-09-18 | 英利集团有限公司 | Method for reducing dislocation of crystal inside silicon ingot in ingot casting process |
| CN103741214A (en) * | 2014-01-28 | 2014-04-23 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon ingot casting process |
| CN104213191A (en) * | 2014-08-28 | 2014-12-17 | 北京京仪集团涿鹿光伏材料有限公司 | Semi-melting high-efficiency polycrystalline silicon ingot casting process |
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