CN102691110A - Annealing process for ingot furnace - Google Patents
Annealing process for ingot furnace Download PDFInfo
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- CN102691110A CN102691110A CN2012101936734A CN201210193673A CN102691110A CN 102691110 A CN102691110 A CN 102691110A CN 2012101936734 A CN2012101936734 A CN 2012101936734A CN 201210193673 A CN201210193673 A CN 201210193673A CN 102691110 A CN102691110 A CN 102691110A
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- silicon ingot
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- ingot
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Abstract
The invention discloses an annealing process for an ingot furnace. In the annealing process, inert gas shielding is replaced by a vacuum mode for annealing. In the annealing process for the ingot furnace provided by the invention, inert gas shielding in a silicon ingot annealing process is changed into the vacuum annealing, the mode is more conductive to heat transmission, and the temperature gradient of the whole silicon ingot can be reduced faster and is more uniform, so that the inner stress of the silicon ingot can be better released and the inner defect of the silicon ingot can be effectively reduced, the integral annealing effect of the silicon ingot can be enhanced, the quality of the silicon ingot is improved, and the quality of a better piece is improved; and at the same time the usage amount of argon in the production is reduced, and 8m<3>-12m<3> of argon can be saved by each silicon ingot.
Description
Technical field
The present invention relates to the silicon ingot production field, be specifically related to a kind of ingot furnace annealing process.
Background technology
In the silicon ingot production process, mainly cool off through five important stage silicon material heating, the fusing of silicon material, silicon ingot growth, silicon ingot annealing, silicon ingot.Heating early stage be a vacuum mode in the ingot furnace, when temperature is heated to a certain temperature, charges into the rare gas element argon gas in the ingot furnace and effectively protects, and until last cooling completion argon shield is arranged all.
After the silicon material was through heating, fusing, growth, last silicon feed liquid body was accomplished when solidifying, and has a tangible thermograde to the top from the bottom of solidifying silicon ingot, and thermograde is cold for the hot end, top.This thermograde is at silicon ingot inner generation stress or minimum stress crack, and there are a large amount of microdefects in silicon ingot inside.In this state,, when on band saw or scroll saw, cutting, can see these crackles,, effectively reduce silicon ingot interior microscopic defective simultaneously so must internal stress be discharged annealed technology if with the silicon ingot cool to room temperature.
Prior art is in the silicon ingot annealing process; With rare gas elementes such as argon gas or helium silicon ingot is protected always; The ingot furnace internal temperature is elevated to the annealing temperature of setting, keeps annealing temperature to carry out process for cooling after for some time, thereby realize silicon ingot annealing.The annealed purpose is to reduce the silicon ingot subsurface defect, improves and eliminates remaining internal stress, reduces the stealthy or remarkable crackle of silicon ingot, thereby improves the silicon ingot quality.But the annealing of the silicon ingot of traditional technology is also insufficient, and thermograde is big up and down in ingot furnace inside, and thermograde is big up and down thereby make silicon ingot, and the silicon ingot subsurface defect is many, and the silicon ingot quality has much room for improvement.Therefore the improvement of annealing process is significant concerning improving the silicon ingot quality.
Summary of the invention
The purpose of this invention is to provide a kind of ingot furnace annealing process, can effectively improve heat transfer efficiencies, thereby better discharge silicon ingot internal stress and the inner defective of more effective minimizing silicon ingot.
For addressing the above problem, the present invention adopts following technical scheme:
A kind of ingot furnace annealing process is replaced by vacuum mode with protection of inert gas and anneals in annealing process.
As preferably, adopting said vacuum mode to carry out annealed constant temperature design temperature is 1000 ℃～1400 ℃.
As preferably, adopting said vacuum mode to carry out the annealed time is 0.5h～3h.
As preferably, the vacuum pressure when adopting said vacuum mode to anneal is below the 1mbar.
As preferably, re-fill rare gas element again after said annealing process is accomplished and carry out subsequent technique.
A kind of ingot furnace annealing process provided by the invention changes the protection of inert gas in the silicon ingot annealing process procedure into vacuum annealing, under this pattern; With the transmission that more helps heat; The thermograde of whole silicon ingot is reduced and more even, thereby better discharge silicon ingot internal stress and the inner defective of more effective minimizing silicon ingot, strengthen the integrally annealed effect of silicon ingot; Improve the silicon ingot quality, thereby improve the quality of battery sheet; Reduce the argon gas usage quantity in producing simultaneously, each silicon ingot can be saved 8m
3～12m
3Argon gas.
Embodiment
In order further to understand the present invention, below in conjunction with embodiment the preferred embodiment of the invention is described, describe just to further specifying feature and advantage of the present invention but should be appreciated that these, rather than to the restriction of claim of the present invention.
The present invention provides a kind of ingot furnace annealing process, and it is replaced by vacuum mode with the protection of inert gas in traditional annealing process, promptly no longer charges into rare gas element protection in the annealing process, but under vacuum state, anneals.
Traditional annealing process uses rare gas elementes such as argon gas or helium that silicon ingot is protected; Though argon gas is a rare gas element; But the thermal conduction of all gas is all poor than thermal conduction effect in a vacuum, and just as transmission and the aerial transmission of sunlight in space vacuum, heat transmission speed and degree of uniformity in a vacuum is all than good many in air; Heat transfer efficiencies is higher under the vacuum state; Because radiation heat transfer does not need intermediate medium, can carry out in a vacuum, and the transmission of radiating capacity is the most effective in a vacuum.Therefore the present invention can effectively improve heat transfer efficiencies with the alternative protection of inert gas of vacuum mode; Thereby better discharge the inner defective of silicon ingot internal stress and more effective minimizing silicon ingot; And reduce the argon gas usage quantity in producing simultaneously, each silicon ingot can be saved 8m
3～12m
3Argon gas.
The constant temperature design temperature of the present invention in the vacuum mode annealing process is preferably 1000 ℃～1400 ℃, and vacuum pressure is below 1mbar, and heating power is not limit.
Re-fill rare gas element again after annealing process is accomplished and carry out follow-up process for cooling; Whole annealing process comprises growth later stage, annealing section and cooling early stage, and vacuum mode can be set at later stages or annealing section early stage, and the annealing time of preferred vacuum mode is 0.5h～3h; Promptly be in perhaps annealing section of growth later stage and begin to adopt vacuum mode during early stage; The ingot furnace internal temperature is increased to 1000 ℃～1400 ℃, and vacuum pressure keeps this annealing temperature 0.5h～3h below 1mbar; Re-fill rare gas element then, at this moment can be perhaps to cool off early stage in the annealing section later stage, thereby accomplish whole vacuum annealing process, realize the silicon ingot vacuum annealing, cool off again after the annealing.
Embodiment:
The growth later stage at silicon ingot begins to adopt vacuum mode, gets into the annealing section, and the ingot furnace internal temperature is increased to 1200 ℃, and vacuum pressure keeps this annealing temperature 2h to eliminate internal stress at 1mbar, re-fills rare gas element then and gets into colling stages.
This vacuum annealing process provided by the invention; More help the transmission of heat, the thermograde of whole silicon ingot is reduced and more even, better discharge the silicon ingot internal stress; Reduce the inner defective of silicon ingot; Strengthen the integrally annealed effect of silicon ingot, improve the silicon ingot quality, thereby improve the quality of battery sheet.
More than a kind of ingot furnace annealing process provided by the present invention has been carried out detailed introduction.Used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection domain of claim of the present invention.
Claims (5)
1. an ingot furnace annealing process is characterized in that, in annealing process, protection of inert gas is replaced by vacuum mode and anneals.
2. ingot furnace annealing process according to claim 1 is characterized in that, adopting said vacuum mode to carry out annealed constant temperature design temperature is 1000 ℃～1400 ℃.
3. ingot furnace annealing process according to claim 1 is characterized in that, adopting said vacuum mode to carry out the annealed time is 0.5h～3h.
4. ingot furnace annealing process according to claim 1 is characterized in that, the vacuum pressure when adopting said vacuum mode to anneal is below the 1mbar.
5. ingot furnace annealing process according to claim 1 is characterized in that, re-fills rare gas element again after said annealing process is accomplished and carries out subsequent technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101936734A CN102691110A (en) | 2012-06-13 | 2012-06-13 | Annealing process for ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101936734A CN102691110A (en) | 2012-06-13 | 2012-06-13 | Annealing process for ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102691110A true CN102691110A (en) | 2012-09-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101936734A Pending CN102691110A (en) | 2012-06-13 | 2012-06-13 | Annealing process for ingot furnace |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343391A (en) * | 2013-07-16 | 2013-10-09 | 江西旭阳雷迪高科技股份有限公司 | Polysilicon cast ingot annealing and cooling technology |
| CN108754603A (en) * | 2018-06-21 | 2018-11-06 | 晶科能源有限公司 | A kind of production method of ingot casting |
| CN111489969A (en) * | 2019-01-29 | 2020-08-04 | 东莞新科技术研究开发有限公司 | Heat treatment method of semiconductor silicon wafer |
| CN114068325A (en) * | 2020-08-03 | 2022-02-18 | 东莞新科技术研究开发有限公司 | Semiconductor cooling treatment method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102296368A (en) * | 2011-09-02 | 2011-12-28 | 江西赛维Ldk太阳能高科技有限公司 | Method for reducing thermal stress of crystal |
-
2012
- 2012-06-13 CN CN2012101936734A patent/CN102691110A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102296368A (en) * | 2011-09-02 | 2011-12-28 | 江西赛维Ldk太阳能高科技有限公司 | Method for reducing thermal stress of crystal |
Non-Patent Citations (1)
| Title |
|---|
| 侯炜强: "多晶硅铸锭炉生产工艺控制技术和设备组成", 《电子工艺技术》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343391A (en) * | 2013-07-16 | 2013-10-09 | 江西旭阳雷迪高科技股份有限公司 | Polysilicon cast ingot annealing and cooling technology |
| CN108754603A (en) * | 2018-06-21 | 2018-11-06 | 晶科能源有限公司 | A kind of production method of ingot casting |
| CN111489969A (en) * | 2019-01-29 | 2020-08-04 | 东莞新科技术研究开发有限公司 | Heat treatment method of semiconductor silicon wafer |
| CN114068325A (en) * | 2020-08-03 | 2022-02-18 | 东莞新科技术研究开发有限公司 | Semiconductor cooling treatment method |
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Application publication date: 20120926 |