CN106835044A - 一种二硫化钼半导体薄膜材料的制备方法 - Google Patents

一种二硫化钼半导体薄膜材料的制备方法 Download PDF

Info

Publication number
CN106835044A
CN106835044A CN201710082163.2A CN201710082163A CN106835044A CN 106835044 A CN106835044 A CN 106835044A CN 201710082163 A CN201710082163 A CN 201710082163A CN 106835044 A CN106835044 A CN 106835044A
Authority
CN
China
Prior art keywords
molybdenum bisuphide
layer
insulating substrate
adjusted
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710082163.2A
Other languages
English (en)
Inventor
不公告发明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
Original Assignee
Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Sichuang Yuanbo Electronic Technology Co Ltd filed Critical Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
Priority to CN201710082163.2A priority Critical patent/CN106835044A/zh
Publication of CN106835044A publication Critical patent/CN106835044A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M173/00—Lubricating compositions containing more than 10% water
    • C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
    • C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
    • C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
    • C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
    • C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
    • C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本发明公开了一种二硫化钼半导体薄膜材料的制备方法，该制备方法采用在上下两层二硫化钼膜层之间插入一层铜金属层，利用所插入的铜金属薄层中的自由电子对对上下两层二硫化钼膜层的电子注入效应，提高薄膜材料中的电子载流子浓度和电子迁移率，达到显著降低二硫化钼薄膜材料的电阻率值，显著提高了二硫化钼薄膜材料的导电性能，并且所形成的二硫化钼/铜/二硫化钼薄膜的结构稳定，性能可重复性强。

Description

一种二硫化钼半导体薄膜材料的制备方法
技术领域
本发明涉及半导体材料制造领域，具体涉及一种二硫化钼半导体薄膜材料的制备方法。
背景技术
二硫化钼薄膜材料本身不导电，但具有抗磁性，可用作线性光电导体和显示P型或N型导电性能的半导体，具有整流和换能的作用。二硫化钼的上述结构特征导致其电阻率非常大、载流子输运性能较差，使其在半导体及器件领域的应用受到了严重阻碍。因此，需要进行材料改性，以提高二硫化钼薄膜材料中的载流子数目和载流子迁移率，减小二硫化钼薄膜材料的电阻率，从而提高二硫化钼薄膜材料的导电性。
为降低二硫化钼薄膜材料的电阻率、提高其导电性能，以满足二硫化钼薄膜材料在半导体器件领域的使用。现有技术中，相对比较成功的做法是，使用金属元素对二硫化钼进行掺杂，以进行二硫化钼材料改性。
但是，这种使用金属元素对二硫化钼进行掺杂，以进行二硫化钼材料改性的方法，其原理均是，使金属元素进入二硫化钼晶格中，以取代二硫化钼元素。由于原子半径、得失电子能力等方面的差异，这种掺杂技术必然在二硫化钼薄膜中形成大量缺陷，从而导致产品的材料结构和性能的不稳定性。
总之，采用掺杂的技术手段，以进行二硫化钼薄膜材料的改性，其产品性能的一致性、稳定性相对较差，产品质量的控制难度大。
发明内容
本发明提供一种二硫化钼半导体薄膜材料的制备方法，该制备方法采用在上下两层二硫化钼膜层之间插入一层铜金属层，利用所插入的铜金属薄层中的自由电子对对上下两层二硫化钼膜层的电子注入效应，提高薄膜材料中的电子载流子浓度和电子迁移率，达到显著降低二硫化钼薄膜材料的电阻率值，显著提高了二硫化钼薄膜材料的导电性能，并且所形成的二硫化钼/铜/二硫化钼薄膜的结构稳定，性能可重复性强。
为了实现上述目的，本发明提供了一种二硫化钼半导体薄膜材料的制备方法，该方法包括如下步骤：
（1）基片处理
将绝缘基片切削研磨后，将绝缘基片依次用洗洁精、去离子水超声清洗10-15min，然后用质量百分数35％的浓氨水/质量百分数20％的双氧水/去离子水的混合溶液65-75℃处理20-25min，所述浓氨水、双氧水和去离子水的体积比为1:3:4，最后用去离子水超声清洗150-200s，取出、用干燥氮气吹干；
（2）将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的30-45W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层；
（3）将沉积有第一层二硫化钼膜层的绝缘基片的温度调至100-150℃，氮气气压调至1-5Pa，采用直流磁控溅射技术，在恒定的40-45W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层；
（4）将沉积有铜金属层的绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的35-40W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。
优选的，在所述步骤（1）中，所述切削需利用切削液进行，该切削液采用如下工艺制得：
向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇15-25%，羟乙基乙二胺20-25%，三乙醇胺5-10%，FA/QB螯合剂10-15%，余量为水。
具体实施方式
实施例一
将绝缘基片切削研磨，该切削液采用如下工艺制得：向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇15%，羟乙基乙二胺20%，三乙醇胺5%，FA/QB螯合剂10-15%，余量为水。将绝缘基片依次用洗洁精、去离子水超声清洗10min，然后用浓氨水(质量百分数35％)/双氧水(质量百分数20％)/去离子水(体积比为1:3:4)的混合溶液65℃处理20min，最后用去离子水超声清洗150s，取出、用干燥氮气吹干。
将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至50℃，氮气气压调至5Pa，采用直流磁控溅射技术，在恒定的30W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层。
将沉积有第一层二硫化钼膜层的绝缘基片的温度调至100℃，氮气气压调至1Pa，采用直流磁控溅射技术，在恒定的40W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层。
将沉积有铜金属层的绝缘基片的温度调至50℃，氮气气压调至5Pa，采用直流磁控溅射技术，在恒定的35W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。
实施例二
将绝缘基片切削研磨，该切削液采用如下工艺制得：向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇25%，羟乙基乙二胺25%，三乙醇胺10%，FA/QB螯合剂10-15%，余量为水。将绝缘基片依次用洗洁精、去离子水超声清洗10-15min，然后用浓氨水(质量百分数35％)/双氧水(质量百分数20％)/去离子水(体积比为1:3:4)的混合溶液75℃处理25min，最后用去离子水超声清洗200s，取出、用干燥氮气吹干。
将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至100℃，氮气气压调至10Pa，采用直流磁控溅射技术，在恒定的45W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层。
将沉积有第一层二硫化钼膜层的绝缘基片的温度调至150℃，氮气气压调至5Pa，采用直流磁控溅射技术，在恒定的45W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层。
将沉积有铜金属层的绝缘基片的温度调至100℃，氮气气压调至10Pa，采用直流磁控溅射技术，在恒定的40W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。

Claims (2)

1. 一种二硫化钼半导体薄膜材料的制备方法，该方法包括如下步骤：
（1）基片处理
将绝缘基片切削研磨后，将绝缘基片依次用洗洁精、去离子水超声清洗10-15min，然后用质量百分数35％的浓氨水/质量百分数20％的双氧水/去离子水的混合溶液65-75℃处理20-25min，所述浓氨水、双氧水和去离子水的体积比为1:3:4，最后用去离子水超声清洗150-200s，取出、用干燥氮气吹干；
（2）将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的30-45W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层；
（3）将沉积有第一层二硫化钼膜层的绝缘基片的温度调至100-150℃，氮气气压调至1-5Pa，采用直流磁控溅射技术，在恒定的40-45W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层；
（4）将沉积有铜金属层的绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的35-40W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。
2.如权利要求1所述的方法，其特征在于，在所述步骤（1）中，所述切削需利用切削液进行，该切削液采用如下工艺制得：
向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇15-25%，羟乙基乙二胺20-25%，三乙醇胺5-10%，FA/QB螯合剂10-15%，余量为水。
CN201710082163.2A 2017-02-15 2017-02-15 一种二硫化钼半导体薄膜材料的制备方法 Pending CN106835044A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710082163.2A CN106835044A (zh) 2017-02-15 2017-02-15 一种二硫化钼半导体薄膜材料的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710082163.2A CN106835044A (zh) 2017-02-15 2017-02-15 一种二硫化钼半导体薄膜材料的制备方法

Publications (1)

Publication Number Publication Date
CN106835044A true CN106835044A (zh) 2017-06-13

Family

ID=59128042

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710082163.2A Pending CN106835044A (zh) 2017-02-15 2017-02-15 一种二硫化钼半导体薄膜材料的制备方法

Country Status (1)

Country Link
CN (1) CN106835044A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113151782A (zh) * 2021-04-21 2021-07-23 金堆城钼业股份有限公司 一种二硫化钼薄膜的制备方法
CN116375088A (zh) * 2023-05-30 2023-07-04 中石油深圳新能源研究院有限公司 Cu-Mo-S纳米线及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1858169A (zh) * 2006-05-31 2006-11-08 河北工业大学 半导体硅材料水基切削液
CN103205724A (zh) * 2013-04-23 2013-07-17 南开大学 一种二硫化钼薄膜材料的制备方法
CN104934490A (zh) * 2015-04-13 2015-09-23 许昌学院 一种大面积合成氧化亚锡半导体光电薄膜材料的方法
CN104979037A (zh) * 2015-05-14 2015-10-14 上海电力学院 一种热稳定性增强的透明导电薄膜及其制备方法和应用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1858169A (zh) * 2006-05-31 2006-11-08 河北工业大学 半导体硅材料水基切削液
CN103205724A (zh) * 2013-04-23 2013-07-17 南开大学 一种二硫化钼薄膜材料的制备方法
CN104934490A (zh) * 2015-04-13 2015-09-23 许昌学院 一种大面积合成氧化亚锡半导体光电薄膜材料的方法
CN104979037A (zh) * 2015-05-14 2015-10-14 上海电力学院 一种热稳定性增强的透明导电薄膜及其制备方法和应用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113151782A (zh) * 2021-04-21 2021-07-23 金堆城钼业股份有限公司 一种二硫化钼薄膜的制备方法
CN116375088A (zh) * 2023-05-30 2023-07-04 中石油深圳新能源研究院有限公司 Cu-Mo-S纳米线及其制备方法

Similar Documents

Publication Publication Date Title
Sato et al. Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
Joubert et al. The etching of polymers in oxygen‐based plasmas: A parametric study
Zhang et al. An ZnMgO: PVP inorganic–organic hybrid electron transport layer: Towards efficient bottom-emission and transparent quantum dot light-emitting diodes
TW200415668A (en) Plasma doping method
Niu et al. Understanding the mechanism of PEDOT: PSS modification via solvent on the morphology of perovskite films for efficient solar cells
CN106835044A (zh) 一种二硫化钼半导体薄膜材料的制备方法
CN107513692A (zh) 一种制膜方法
Wei et al. Linear plasma sources for large area film deposition: A brief review
US20150011047A1 (en) Method for fabricating igzo layer and tft
Whitcher et al. Determination of energy levels at the interface between O2 plasma treated ITO/P3HT: PCBM and PEDOT: PSS/P3HT: PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
JP2012512327A (ja) 低いエネルギーを有している粒子によって絶縁層を形成する方法
TW200427759A (en) Method of reducing the photoelectric device current leakage in conjugated polymer and conjugated polymer composition
CN105070646A (zh) 一种低应力氮化硅薄膜的制备方法
CN106801218A (zh) 一种碳银碳半导体薄膜材料的制备方法
Zhao et al. Post‐Assembled Alkylphosphonic Acids for Efficient and Stable Inverted Perovskite Solar Cells
CN106835045A (zh) 一种钛酸钡薄膜的制备方法
Ohtsu et al. Plasma characteristics and target erosion profile of racetrack-shaped RF magnetron plasma with weak rubber magnets for full circular target utilization
TW201027781A (en) Method and apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films
Song et al. Ether solvent treatment to improve the device performance of the organic light emitting diodes with aluminum cathode
Nagy et al. An investigation of secondary ion yield enhancement using Bin2+ (n= 1, 3, 5) primary ions
CN104345568A (zh) 减小光刻胶图形线宽粗糙度的方法
Schächter et al. Role of a metal–dielectric structure for the high-charge-state-ion production in electron cyclotron resonance ion sources
Dangtip et al. Study of low power deposition of ITO for top emission OLED with facing target and RF sputtering systems
Yang et al. The Influence of Different Parameters on Capacitive Coupled Magnetron Sputtering Process
CN110165064A (zh) 具有梯度能级空穴调控有机电致发光器件及其制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170613

WD01 Invention patent application deemed withdrawn after publication