CN106835044A - 一种二硫化钼半导体薄膜材料的制备方法 - Google Patents

一种二硫化钼半导体薄膜材料的制备方法 Download PDF

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CN106835044A
CN106835044A CN201710082163.2A CN201710082163A CN106835044A CN 106835044 A CN106835044 A CN 106835044A CN 201710082163 A CN201710082163 A CN 201710082163A CN 106835044 A CN106835044 A CN 106835044A
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Abstract

本发明公开了一种二硫化钼半导体薄膜材料的制备方法，该制备方法采用在上下两层二硫化钼膜层之间插入一层铜金属层，利用所插入的铜金属薄层中的自由电子对对上下两层二硫化钼膜层的电子注入效应，提高薄膜材料中的电子载流子浓度和电子迁移率，达到显著降低二硫化钼薄膜材料的电阻率值，显著提高了二硫化钼薄膜材料的导电性能，并且所形成的二硫化钼/铜/二硫化钼薄膜的结构稳定，性能可重复性强。

Description

一种二硫化钼半导体薄膜材料的制备方法
技术领域
本发明涉及半导体材料制造领域，具体涉及一种二硫化钼半导体薄膜材料的制备方法。
背景技术
二硫化钼薄膜材料本身不导电，但具有抗磁性，可用作线性光电导体和显示P型或N型导电性能的半导体，具有整流和换能的作用。二硫化钼的上述结构特征导致其电阻率非常大、载流子输运性能较差，使其在半导体及器件领域的应用受到了严重阻碍。因此，需要进行材料改性，以提高二硫化钼薄膜材料中的载流子数目和载流子迁移率，减小二硫化钼薄膜材料的电阻率，从而提高二硫化钼薄膜材料的导电性。
为降低二硫化钼薄膜材料的电阻率、提高其导电性能，以满足二硫化钼薄膜材料在半导体器件领域的使用。现有技术中，相对比较成功的做法是，使用金属元素对二硫化钼进行掺杂，以进行二硫化钼材料改性。
但是，这种使用金属元素对二硫化钼进行掺杂，以进行二硫化钼材料改性的方法，其原理均是，使金属元素进入二硫化钼晶格中，以取代二硫化钼元素。由于原子半径、得失电子能力等方面的差异，这种掺杂技术必然在二硫化钼薄膜中形成大量缺陷，从而导致产品的材料结构和性能的不稳定性。
总之，采用掺杂的技术手段，以进行二硫化钼薄膜材料的改性，其产品性能的一致性、稳定性相对较差，产品质量的控制难度大。
发明内容
本发明提供一种二硫化钼半导体薄膜材料的制备方法，该制备方法采用在上下两层二硫化钼膜层之间插入一层铜金属层，利用所插入的铜金属薄层中的自由电子对对上下两层二硫化钼膜层的电子注入效应，提高薄膜材料中的电子载流子浓度和电子迁移率，达到显著降低二硫化钼薄膜材料的电阻率值，显著提高了二硫化钼薄膜材料的导电性能，并且所形成的二硫化钼/铜/二硫化钼薄膜的结构稳定，性能可重复性强。
为了实现上述目的，本发明提供了一种二硫化钼半导体薄膜材料的制备方法，该方法包括如下步骤：
（1）基片处理
将绝缘基片切削研磨后，将绝缘基片依次用洗洁精、去离子水超声清洗10-15min，然后用质量百分数35％的浓氨水/质量百分数20％的双氧水/去离子水的混合溶液65-75℃处理20-25min，所述浓氨水、双氧水和去离子水的体积比为1:3:4，最后用去离子水超声清洗150-200s，取出、用干燥氮气吹干；
（2）将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的30-45W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层；
（3）将沉积有第一层二硫化钼膜层的绝缘基片的温度调至100-150℃，氮气气压调至1-5Pa，采用直流磁控溅射技术，在恒定的40-45W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层；
（4）将沉积有铜金属层的绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的35-40W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。
优选的，在所述步骤（1）中，所述切削需利用切削液进行，该切削液采用如下工艺制得：
向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇15-25%，羟乙基乙二胺20-25%，三乙醇胺5-10%，FA/QB螯合剂10-15%，余量为水。
具体实施方式
实施例一
将绝缘基片切削研磨，该切削液采用如下工艺制得：向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇15%，羟乙基乙二胺20%，三乙醇胺5%，FA/QB螯合剂10-15%，余量为水。将绝缘基片依次用洗洁精、去离子水超声清洗10min，然后用浓氨水(质量百分数35％)/双氧水(质量百分数20％)/去离子水(体积比为1:3:4)的混合溶液65℃处理20min，最后用去离子水超声清洗150s，取出、用干燥氮气吹干。
将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至50℃，氮气气压调至5Pa，采用直流磁控溅射技术，在恒定的30W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层。
将沉积有第一层二硫化钼膜层的绝缘基片的温度调至100℃，氮气气压调至1Pa，采用直流磁控溅射技术，在恒定的40W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层。
将沉积有铜金属层的绝缘基片的温度调至50℃，氮气气压调至5Pa，采用直流磁控溅射技术，在恒定的35W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。
实施例二
将绝缘基片切削研磨，该切削液采用如下工艺制得：向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇25%，羟乙基乙二胺25%，三乙醇胺10%，FA/QB螯合剂10-15%，余量为水。将绝缘基片依次用洗洁精、去离子水超声清洗10-15min，然后用浓氨水(质量百分数35％)/双氧水(质量百分数20％)/去离子水(体积比为1:3:4)的混合溶液75℃处理25min，最后用去离子水超声清洗200s，取出、用干燥氮气吹干。
将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至100℃，氮气气压调至10Pa，采用直流磁控溅射技术，在恒定的45W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层。
将沉积有第一层二硫化钼膜层的绝缘基片的温度调至150℃，氮气气压调至5Pa，采用直流磁控溅射技术，在恒定的45W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层。
将沉积有铜金属层的绝缘基片的温度调至100℃，氮气气压调至10Pa，采用直流磁控溅射技术，在恒定的40W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。

Claims (2)

1. 一种二硫化钼半导体薄膜材料的制备方法，该方法包括如下步骤：
（1）基片处理
将绝缘基片切削研磨后，将绝缘基片依次用洗洁精、去离子水超声清洗10-15min，然后用质量百分数35％的浓氨水/质量百分数20％的双氧水/去离子水的混合溶液65-75℃处理20-25min，所述浓氨水、双氧水和去离子水的体积比为1:3:4，最后用去离子水超声清洗150-200s，取出、用干燥氮气吹干；
（2）将处理后的绝缘基片装入托盘、放入真空腔，并将真空腔抽为高真空，在氮气环境下，将绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的30-45W溅射功率条件下，利用电离出的氮离子轰击二硫化钼靶材，在所述绝缘基片的上表面上，沉积第一层二硫化钼膜层；
（3）将沉积有第一层二硫化钼膜层的绝缘基片的温度调至100-150℃，氮气气压调至1-5Pa，采用直流磁控溅射技术，在恒定的40-45W溅射功率条件下，利用电离出的离子轰击铜金属靶材，在上述第一层二硫化钼膜层的表面上，再沉积一层铜金属层；
（4）将沉积有铜金属层的绝缘基片的温度调至50-100℃，氮气气压调至5-10Pa，采用直流磁控溅射技术，在恒定的35-40W溅射功率条件下，利用电离出的离子轰击二硫化钼靶材，在上述铜膜层的表面上，再第二层二硫化钼膜层，得到二硫化钼铜二硫化钼半导体薄膜材料。
2.如权利要求1所述的方法，其特征在于，在所述步骤（1）中，所述切削需利用切削液进行，该切削液采用如下工艺制得：
向水中依次加入聚乙二醇、羟乙基乙二胺、三乙醇胺，混合均匀，静置20min，再加入FA/QB螯合剂，混合搅拌均匀，静置30min，得到切削液，其中切削液的各组分的重量百分比为：聚乙二醇15-25%，羟乙基乙二胺20-25%，三乙醇胺5-10%，FA/QB螯合剂10-15%，余量为水。
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CN113151782A (zh) * 2021-04-21 2021-07-23 金堆城钼业股份有限公司 一种二硫化钼薄膜的制备方法
CN116375088A (zh) * 2023-05-30 2023-07-04 中石油深圳新能源研究院有限公司 Cu-Mo-S纳米线及其制备方法

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