Brief description of the drawings
The generalized section of the Copper Foil that Fig. 1 is provided for the specific embodiment of the invention.
Fig. 2 is that the section formed on a surface of the Copper Foil of Fig. 1 after the photosensitive resin of upside is illustrated
Figure.
Fig. 3 is the generalized section after opening up side trench in the upside photosensitive resin of Fig. 2.
Fig. 4 is that the Copper Foil of Fig. 3 is made the generalized section to form conductive pattern.
Fig. 5 is the generalized section on the downside of pressing after photosensitive resin on the conductive pattern of Fig. 4.
Fig. 6 is the generalized section after opening up lower side trench in the downside photosensitive resin of Fig. 5.
Fig. 7 is to insert upside conductive material in the upper side trench of Fig. 6 respectively, is filled out in lower side trench
Enter downside conductive material, and screen layer and under on the upside of being formed on the photosensitive resin of upside respectively
The generalized section after the screen layer of downside is formed on the photosensitive resin of side.
Fig. 8 is protective layer and in lower side shield on the upside of being formed on the upside screen layer of Fig. 7 respectively
The generalized section after the protective layer of downside is formed on layer.
Main element symbol description
Circuit board 100
Copper Foil 10
Upside photosensitive resin 20
Upper side trench 21
Conductive pattern 30
Holding wire 31
Ground wire 32
Wire 33
Downside photosensitive resin 40
Dielectric layer 41
Lower side trench 42
Upside conductive material 51
Downside conductive material 52
Upside screen layer 61
Downside screen layer 62
Crystal seed layer 511,521,611,621
Electrodeposited coating 512,522,612,622
Shroud sleeve 70
Upside protective layer 81
Downside protective layer 82
Following specific embodiment will further illustrate the present invention with reference to above-mentioned accompanying drawing.
Specific embodiment
The circuit board provided the present invention with reference to specific embodiment and circuit board making side
Method is described further.
The preparation method of the circuit board that the specific embodiment of the invention is provided includes following step
Suddenly.
The first step, refers to Fig. 1, there is provided Copper Foil 10.
In present embodiment, the Copper Foil 10 is in the form of sheets.The Copper Foil 10 can be by web-like
Copper Foil raw material cut forming according to real needs.
Second step, refers to Fig. 2, and upside photosensitive resin 20 is formed in into the one of the Copper Foil 10
On surface.
3rd step, refers to Fig. 3, and side trench 21 is opened up in the upside photosensitive resin 20.
In present embodiment, side trench 21 on two is opened up in the upside photosensitive resin 20.
In present embodiment, the upper side trench 21 is from the upside photosensitive resin 20 away from described
The surface of Copper Foil 10 in the upside photosensitive resin 20 to opening up.Described two upper side trench 21
Bearing of trend is consistent (being each perpendicular to drawing inwards), and is parallel to each other.Every upper lateral sulcus
Groove 21 runs through the upside photosensitive resin 20.The part Copper Foil 10 is from upside every described
Groove 21 exposes.In present embodiment, the upper side trench 21 is perpendicular to its bearing of trend
Section is in inverted trapezoidal.The groove width of the upper side trench 21 deviates from from the upside photosensitive resin 20
The surface of the Copper Foil 10 is gradually reduced to the Copper Foil 10.The upper side trench 21 can pass through
Exposure imaging is formed.
4th step, refers to Fig. 4, the Copper Foil 10 is made and forms conductive pattern 30.
In present embodiment, the conductive pattern 30 includes 31, two ground connection of a signal line
Line 32 and a plurality of wire 33.The holding wire 31 is located between two ground wires 32.Institute
Two ground wires 32 are stated to be spaced a plurality of wire 33 and the holding wire 31.The conduction
Upside photosensitive resin 20 described in the gap exposed portion of figure 30.
In present embodiment, the bearing of trend and institute of the holding wire 31 and the ground wire 32
The bearing of trend for stating side trench 21 is consistent.On every ground wire 32 is described with one
The correspondence of side trench 21.In present embodiment, the holding wire 31 is mutual with the ground wire 32
It is parallel.The holding wire 31 is spaced same distance with ground wire every described 32 respectively.
In present embodiment, the conductive pattern 30 can be formed by etching.
5th step, refers to Fig. 5, the photosensitive resin 40 on the downside of pressing on the conductive pattern 30.
The downside photosensitive resin 40 coats the conductive pattern 30.The downside photosensitive resin
40 gaps for filling up the conductive pattern 30, and bond formation with the upside photosensitive resin 20
Dielectric layer 41.The conductive pattern 30 is located on the center line of the thickness direction of the dielectric layer 41.
The conductive pattern 30 is in center line of its thickness direction on the thickness direction of the dielectric layer 41
Symmetrically.
6th step, refers to Fig. 6, and lower side trench 42 is opened up in the downside photosensitive resin 40.
In present embodiment, two lower side trench 42 are opened up in the downside photosensitive resin 40.
The lower side trench 42 to open up opening up for direction and the upper side trench 21 in opposite direction.This
In implementation method, the lower side trench 42 deviates from the conduction from the downside photosensitive resin 40
The surface of figure 30 in the downside photosensitive resin 40 to opening up.Every lower side trench 42
Run through the downside photosensitive resin 40.The bearing of trend of two lower side trench 42 and institute
The bearing of trend for stating two ground wires 32 is consistent.Every the correspondence of lower side trench 42 one connects
Ground wire 32.Every ground wire 32 exposes from corresponding lower side trench 42.Under every described
Side trench 42 also corresponds to a upper side trench 21.Every the lower side trench 42 is right with it
Off normal tolerance between the upper side trench 21 answered is less than or equal to 75 microns.In present embodiment,
The lower side trench 42 is trapezoidal perpendicular to the section of its bearing of trend.The lower side trench 42
Groove width led to described away from the surface of the conductive pattern 30 from the downside photosensitive resin 40
Electrograph shape 30 is gradually reduced.The groove width of the lower side trench 42 reduces direction and the upper lateral sulcus
The groove width of groove 21 reduces in opposite direction.The lower side trench 42 can be formed by exposure imaging.
7th step, refers to Fig. 7, and side trench 21 inserts upside conductive material 51 on described
And downside conductive material 52 is inserted in the lower side trench 42;And in the photosensitive tree in the upside
Upside screen layer 61 is formed on fat 20, and is shielded on the downside of formation on the downside photosensitive resin 40
Cover layer 62.
The upside conductive material 51 fills up the upper side trench 21.The upside screen layer 61
Cover the upside photosensitive resin 20.The upside screen layer 61 and the upside conductive material
51 conduct.In present embodiment, the upside conductive material 51 and the upside screen layer
61 form simultaneously.In present embodiment, the upside conductive material 51 includes crystal seed layer 511
And electrodeposited coating 512.The crystal seed layer 511 is formed in the surface of the upper side trench 21.It is described
Electrodeposited coating 512 is formed in the surface of the crystal seed layer 511, and fills up the upper side trench 21.
The upside screen layer 61 includes crystal seed layer 611 and electrodeposited coating 612.The crystal seed layer 611 is formed
On the surface of upside photosensitive resin 20.The electrodeposited coating 612 is formed in the crystal seed layer 611
Surface.In present embodiment, the crystal seed layer 511,611 is formed and is integrated knot simultaneously
Structure.The electrodeposited coating 512,612 is formed and is structure as a whole simultaneously.
The downside conductive material 52 fills up the lower side trench 42.The downside screen layer 62
Cover the downside photosensitive resin 40.The downside screen layer 62 and the downside conductive material
52 conduct.In present embodiment, the downside conductive material 52 and the downside screen layer
62 form simultaneously.In present embodiment, the downside conductive material 52 includes crystal seed layer 521
And electrodeposited coating 522.The crystal seed layer 521 is formed in the surface of the lower side trench 42.It is described
Electrodeposited coating 522 is formed in the surface of the crystal seed layer 521 and fills up the lower side trench 42.Institute
Stating downside screen layer 62 includes crystal seed layer 621 and electrodeposited coating 622.The crystal seed layer 621 is formed in
The surface of the downside photosensitive resin 40.The electrodeposited coating 622 is formed in the crystal seed layer 621
Surface.In present embodiment, the crystal seed layer 521,621 is formed and is integrated knot simultaneously
Structure.The electrodeposited coating 522,622 is formed and is structure as a whole simultaneously.
In present embodiment, the thickness of the upside screen layer 61 and downside screen layer 62 is identical.
The downside screen layer 62, the downside conductive material 52, the ground wire 32, institute
State upside conductive material 51 and the upside screen layer 61 surrounds a shroud sleeve for closure
70.The holding wire 31 is located in the shroud sleeve 70, to avoid the wire 33 and institute
The electromagnetic interference between holding wire 31 is stated, while signal transmission electromagnetic field is concentrated on into housing
In cylinder, so as to improve signaling rate.In present embodiment, the holding wire 31 is located at
On the central shaft of the shroud sleeve 70, further to lift effectiveness and improve letter
Number transmission speed.
In present embodiment, the upside conductive material 51, upside screen layer 61, downside is led
Electric material 52 and downside screen layer 62 can be formed in the following way.
First, the surface of side trench 21 forms crystal seed layer 511 on described.It is photosensitive in the upside
The surface of resin 20 forms crystal seed layer 611.Crystal seed layer 521 is formed on the surface of lower side trench 42.
Crystal seed layer 621 is formed on the surface of downside photosensitive resin 40.The crystal seed layer 511,611,
521, and 621 can be formed by the electroless plating mode such as chemical plating, evaporation, sputter.
Then, electrodeposited coating 512 is formed in the electroplating surface of the crystal seed layer 511.The electrodeposited coating
512 fill up the upper side trench 21.Electrodeposited coating is formed in the electroplating surface of the crystal seed layer 611
612.Electrodeposited coating 522 is formed in the electroplating surface of the crystal seed layer 521.The electrodeposited coating 522 is filled out
The full lower side trench 42.Electrodeposited coating 622 is formed in the electroplating surface of the crystal seed layer 621.
In other embodiment, the upside conductive material 51 and upside screen layer 61 are described
Downside screen layer 62 and downside screen layer 62 are formed when can be different.Now, first, described
Conductive material 51,52 is respectively filled in upper side trench 21 and lower side trench 42;Then, respectively
Conductive material surface in the surface of upside photosensitive resin 20 and upper side trench 21, downside is photosensitive
Conductive material surface in the surface of resin 40 and lower side trench 42 forms crystal seed layer;Finally, exist
The seed layer surface forms electrodeposited coating, to form upside screen layer 61 and downside screen layer 62
8th step, refers to Fig. 8, is protected on the upside of the surface of upside screen layer 61 is formed
Layer 81;And the surface of downside screen layer 62 formed on the downside of protective layer 82.
The upside protective layer 81 covers the upside screen layer 61.The downside screen layer
The 62 covering downside screen layers 62.In present embodiment, the upside protective layer 81
Thickness is identical with the thickness of the downside protective layer 82.
It is understood that in other embodiment, can not also form the upside protective layer
81 and downside protective layer 82.
The specific embodiment of the invention also provides a kind of circuit board 100.The circuit board 100
Can be obtained by foregoing circuit board manufacturing method.
Referring to Fig. 8, the circuit board 100 includes that conductive pattern 30, upside is photosensitive
Resin 20, upside conductive material 51, upside screen layer 61, upside protective layer 81, downside
Photosensitive resin 40, downside conductive material 52, downside screen layer 62 and downside protective layer 82.
The conductive pattern 30 is located at the middle part of the thickness direction of the circuit board 100.This implementation
In mode, the conductive pattern 30 includes 31, two ground wires 32 of a signal line and many
Bar wire 33.The holding wire 31 is located between two ground wires 32.The wire
33 relatively described holding wires 31 are located at outside two ground wires 32.In present embodiment,
The bearing of trend of the holding wire 31 and the ground wire 32 it is consistent (be each perpendicular to drawing to
In).The holding wire 31 is parallel to each other with the ground wire 32.31 points of the holding wire
Same distance is not spaced with ground wire every described 32.
The upside photosensitive resin 20 is formed on the downside photosensitive resin 40.The upside
Photosensitive resin 20 covers the conductive pattern 30.Offered in the upside photosensitive resin 20
Side trench 21.In present embodiment, the upside photosensitive resin 20 offers two upper lateral sulcus
Groove 21.Described two bearing of trends one for going up the bearing of trends of side trench 21 and the ground wire 32
Cause.Every the upper side trench 21 corresponds to a ground wire 32.Every upside
Groove 21 runs through the upside photosensitive resin 20, and its corresponding ground wire 32 is from the upside
Groove 21 exposes.In present embodiment, the upper side trench 21 is perpendicular to its bearing of trend
Section is in inverted trapezoidal.The groove width of the upper side trench 21 deviates from from the upside photosensitive resin 20
The surface of the conductive pattern 30 is gradually reduced to the conductive pattern 30.
The upside conductive material 51 fills up the upper side trench 21.In present embodiment, institute
Stating upside conductive material 51 includes crystal seed layer 511 and electrodeposited coating 512.The crystal seed layer 511 is formed
The surface of side trench 21 on described.The electrodeposited coating 512 is formed in the crystal seed layer 511
Surface, and fill up the upper side trench 21.
The upside screen layer 61 covers the upside photosensitive resin 20, and is led with the upside
Electric material 51 is electrically connected.The upside screen layer 61 includes crystal seed layer 611 and electrodeposited coating 612.
The crystal seed layer 611 is formed in the surface of upside photosensitive resin 20.The shape of the electrodeposited coating 612
Into on the surface of the crystal seed layer 611.In present embodiment, the crystal seed layer 611,511
It is structure as a whole.The electrodeposited coating 612,512 is structure as a whole.
The upside protective layer 81 covers the upside screen layer 61.
The downside photosensitive resin 40 covers the conductive pattern 30, fills up the conductive pattern
30 gap, and form dielectric layer 41 with the upside photosensitive resin 20 bonding.The conduction
Figure 30 is located on the center line of the thickness direction of the dielectric layer 41.The conductive pattern 30 exists
Center line of its thickness direction on the thickness direction of the dielectric layer 41 is symmetrical.The downside sense
The correspondence of photopolymer resin 40 ground wire 32 offers lower side trench 42.In present embodiment, institute
State downside photosensitive resin 40 and offer two lower side trench 42.Every the lower side trench 42 is equal
Through the downside photosensitive resin 40.The bearing of trend of two lower side trench 42 with it is described
The bearing of trend of two ground wires 32 is consistent.Every described one ground connection of the correspondence of lower side trench 42
Line 32.Every the lower side trench 42 exposes its corresponding ground wire 32.Every downside
Groove 42 also corresponds to a upper side trench 21.Every the lower side trench 42 is corresponding
Upper side trench 21 between off normal tolerance be less than or equal to 75 microns.In present embodiment,
The lower side trench 42 is trapezoidal perpendicular to the section of its bearing of trend.The lower side trench 42
Groove width led to described away from the surface of the conductive pattern 30 from the downside photosensitive resin 40
Electrograph shape 30 is gradually reduced.The groove width of the lower side trench 42 reduces direction and the upper lateral sulcus
The groove width of groove 21 reduces in opposite direction.
The downside conductive material 52 fills up the lower side trench 42.In present embodiment, institute
Stating downside conductive material 52 includes crystal seed layer 521 and electrodeposited coating 522.The crystal seed layer 521 is formed
On the surface of the lower side trench 42.The electrodeposited coating 522 is formed in the crystal seed layer 521
The lower side trench 42 is simultaneously filled up in surface.
The downside screen layer 62 covers the downside photosensitive resin 40, and is led with the downside
Electric material 52 is conducted.In present embodiment, the downside screen layer 62 includes crystal seed layer 621
And electrodeposited coating 622.The crystal seed layer 621 is formed in the surface of the downside photosensitive resin 40.
The electrodeposited coating 622 is formed in the surface of the crystal seed layer 621.It is described in present embodiment
Crystal seed layer 521,621 is structure as a whole.The electrodeposited coating 522,622 is structure as a whole.Institute
The thickness for stating downside screen layer 62 is identical with the thickness of the upside screen layer 61.
The downside protective layer 82 covers the downside screen layer 62.The downside protective layer
82 thickness is identical with the thickness of the upside protective layer 81.
The downside screen layer 62, the downside conductive material 52, the ground wire 32,
The upside conductive material 51 and the upside screen layer 61 surround a housing for closure
Cylinder 70.The holding wire 31 is located in the shroud sleeve 70, to avoid the wire 33
With the electromagnetic interference between the holding wire 31, while signal transmission electromagnetic field is concentrated on into screen
Cover in sleeve, so as to improve signaling rate.In present embodiment, the holding wire 31
On the central shaft of the shroud sleeve 70, further to lift effectiveness and carry
High RST transmission speed.
It is understood that in other embodiment, the circuit board 100 also may not include
Upside protective layer 81 and downside protective layer 82.
Compared to prior art, circuit board and circuit board manufacturing method that the present invention is provided, by
Led in the downside screen layer, the downside conductive material, the ground wire, the upside
Electric material and the upside screen layer surround a shroud sleeve for closure, and the holding wire
In the shroud sleeve, between other wires and the holding wire of electrically conductive figure
Electromagnetic interference, and signal transmission electromagnetic field is concentrated in shroud sleeve, so as to improve
Signaling rate.
It is understood that for the person of ordinary skill of the art, can be according to this
The technology design of invention makes other various corresponding changes and deformation, and all these changes
With the protection domain that deformation should all belong to the claims in the present invention.