CN106816509A - Compound substrate and preparation method thereof, the preparation method of light-emitting diode chip for backlight unit - Google Patents
Compound substrate and preparation method thereof, the preparation method of light-emitting diode chip for backlight unit Download PDFInfo
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- CN106816509A CN106816509A CN201710224742.6A CN201710224742A CN106816509A CN 106816509 A CN106816509 A CN 106816509A CN 201710224742 A CN201710224742 A CN 201710224742A CN 106816509 A CN106816509 A CN 106816509A
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- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 150000001875 compounds Chemical class 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 93
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 92
- 238000001039 wet etching Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 229910004541 SiN Inorganic materials 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 17
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000013517 stratification Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Weting (AREA)
Abstract
This application discloses a kind of compound substrate and preparation method thereof, based on the compound substrate, this application discloses a kind of preparation method of light emitting diode chip with vertical.In the compound substrate that the application is provided, the height of the first raised structures is less than due to the thickness of the first gallium nitride layer being clipped between the first graph layer and second graph layer, so, the second raised structures on the first raised structures and second graph layer on first graph layer can be connected with each other insertion, and again because each second raised structures on second graph layer interconnect, in this way, the first graph layer and second graph layer are capable of the figure that can be corroded by wet etching solution of the integral interconnection of shape.When wet etching solution is when since etch pattern layer the side of compound substrate, it can preferably penetrate into and etch into each raised structures, so facilitate the wet etching of subsequent epitaxial substrate to peel off.Additionally, the compound substrate can also ensure that the crystal mass of subsequent epitaxial layer.
Description
Technical field
The application is related to light emitting diode field, more particularly to a kind of compound substrate and preparation method thereof, it is compound based on this
Substrate, the application goes back more particularly to a kind of preparation method of light emitting diode chip with vertical.
Background technology
Blue green LED chip includes horizontal structure light-emitting diode chip for backlight unit and light emitting diode chip with vertical,
Wherein, horizontal structure light-emitting diode chip for backlight unit is due to making substrate using Sapphire Substrate, and its thermal conductivity is poor, influence chip can
By property, particularly in the case of higher to cooling requirements in terms of high-power illumination, horizontal structure light-emitting diode chip for backlight unit it is bad
Gesture is more obvious.
And light emitting diode chip with vertical can use heat conductivility preferable substrate such as silicon substrate due to it, its tool
There is reliability and preferable current spreading effect higher, one of important directions as the development of current light emitting diode.
The substrate of light emitting diode chip with vertical includes carborundum (SiC) substrate and Sapphire Substrate.At present, due to
Sapphire Substrate is cheap compared with SiC substrate and easily obtains, thus is light emitting diode with vertical structure core using Sapphire Substrate
The most frequently used substrate of piece.
Sapphire Substrate must be peeled off to make light emitting diode chip with vertical.At present, it is main widely used
Sapphire Substrate lift-off technology be laser lift-off technique.On the one hand need to be shelled using expensive laser using laser lift-off technique
From equipment, it is that, by laser ablation epitaxial layer interface, the yield rate of stripping is not high, and special envoy is to be widely used at present on the other hand to peel off
4,6 cun of Sapphire Substrates, due to epitaxy technique so that the final epitaxial wafer angularity for growing out is big, the stripping of full wafer epitaxial wafer
Absciss layer is frequently not in same level so that it is lower that the focusing of laser etches a yield rate that is more difficult, peeling off.
The content of the invention
In view of this, this application provides a kind of compound substrate and preparation method thereof, realized with by Wet stripping techniques
The substrate and epitaxial structure of light emitting diode with vertical structure are effectively peeled off.
Additionally, present invention also provides a kind of preparation method of light emitting diode chip with vertical.
In order to realize foregoing invention purpose, present invention employs following technical scheme：
A kind of preparation method of compound substrate, including：
Epitaxial substrate is provided；
Form the first graph layer in the epitaxial substrate, first graph layer includes that multiple mutually isolated first dash forward
Structure is played, there is gap between the multiple the first mutually isolated raised structures；
The first gallium nitride layer is formed on the gap, the thickness of first gallium nitride layer is less than the first projection knot
The height of structure；
Second graph layer, the second graph are formed on first raised structures and on first gallium nitride layer
Layer includes multiple second raised structures, and each described second raised structures interconnects；
The material of first graph layer and second graph layer is the material that can be corroded by wet etching liquid.
Alternatively, 2/3 of the thickness of first gallium nitride layer no more than the height of first raised structures.
Alternatively, each first raised structures described in the second raised structures covering at least one.
Alternatively, the material of first graph layer and/or second graph layer includes SiO2、SiN、GaAs、
At least one in AlGaAs, AlAs, AlGaInP, AlInP and GaInP.
Alternatively, first raised structures and/or second raised structures include the circle bag, sub warhead, the cone that bloat
At least one in shape, pyramid, round platform and bucking ladder structure.
A kind of compound substrate, including：
Epitaxial substrate；
It is formed in the first graph layer in the epitaxial substrate；First graph layer includes mutually isolated first of multiple
There is gap in raised structures, the multiple the first mutually isolated raised structures；
The first gallium nitride layer on the gap is formed in, the thickness of first gallium nitride layer is dashed forward less than described first
Play the height of structure；
It is formed in the second graph layer on first raised structures and on first gallium nitride layer；Second figure
Shape layer includes multiple second raised structures, and each described second raised structures interconnects；First graph layer and
The material of the second graph layer is the material that can be corroded by wet etching liquid.
Alternatively, 2/3 of the thickness of first gallium nitride layer no more than the height of first raised structures.
Alternatively, each first raised structures described in the second raised structures covering at least one.
Alternatively, the material of first graph layer and/or second graph layer includes SiO2、SiN、GaAs、
At least one in AlGaAs, AlAs, AlGaInP, AlInP and GaInP.
A kind of preparation method of light emitting diode chip with vertical, including：
Compound substrate is prepared using the preparation method described in any of the above-described implementation method；
The second gallium nitride layer, the gallium nitride layer of the first doping type, volume are formed epitaxially one after the other in the compound substrate
Sub- well structure, electronic barrier layer, the gallium nitride layer and ohmic contact layer of the second doping type；Wherein, first doping type
Conduction type with second doping type is opposite；
Conductive layer is formed on the ohmic contact layer；
Metal mirror layer is formed on the conductive layer；
The first surface of electrically-conductive backing plate is linked together with the metal mirror layer；
First graph layer and second graph layer are etched using wet etching method, so that first graph layer and the second figure
Shape layer village hollowing, so as to the epitaxial substrate and first gallium nitride layer be peeled off from second gallium nitride layer；
Second gallium nitride layer is etched until exposing the gallium nitride layer of the first doping type, so as in the described first doping
The making region of first electrode is formed on the gallium nitride layer of type；
First electrode is formed in the making region of the first electrode；
First electrode separation layer is formed around the first electrode, so that the first electrode and the MQW
Structure, electronic barrier layer, the gallium nitride layer of the second doping type, ohmic contact layer realize isolation；
Second electrode is formed on the second surface of the electrically-conductive backing plate；The first surface and the second surface phase
It is right.
Compared to prior art, the application has the advantages that：
In the compound substrate that the preparation method of the compound substrate provided by the application is prepared, due to being clipped in the first figure
The height of the thickness less than the first raised structures of the first gallium nitride layer between layer and second graph layer, so, the first graph layer
On the first raised structures and second graph layer on the second raised structures can be connected with each other insertion, and again due to the second figure
Each second raised structures on shape layer interconnect, in this way, the first graph layer and second graph layer can form one
The overall figure that can be corroded by wet etching solution being connected with each other.In this way, wet etching solution is once from compound substrate
When side starts etch pattern layer, it can preferably penetrate into and etch into each raised structures (including the first raised structures and the
Two raised structures), so facilitate the corrosion of subsequent epitaxial substrate to peel off.
Additionally, the first gallium nitride layer being formed between the first graph layer and second graph layer can be regarded as inlaying thereon
There are an overall Rotating fields of multiple the first mutually isolated raised structures, from the first raised structures portion that the overall Rotating fields are protruded
Point can as subsequent epitaxial layer nucleus, thus, the overall Rotating fields are conducive to growing the preferable gallium nitride of crystal mass
Crystal.The crystal mass of the second gallium nitride layer grown on the preferable gallium nitride of the crystal mass is also preferable, and then
The crystal mass of the light emitting diode of subsequently epitaxial growing in compound substrate is ensure that, so as to ensure the hair of light emitting diode
Light efficiency.
Brief description of the drawings
In order to be expressly understood the technical scheme of the application, used during the application specific embodiment attached is described below
Figure does a brief description.
Fig. 1 is the preparation method schematic flow sheet of the compound substrate that the embodiment of the present application is provided；
Fig. 2A to Fig. 2 D be the compound substrate that the application is provided preparation method in a series of corresponding structural representation of processing procedures
Figure；
Fig. 3 is the schematic flow sheet of the preparation method of the vertical stratification diode chip for backlight unit that the embodiment of the present application is provided；
A series of systems in the preparation method of the vertical stratification diode chip for backlight unit that Fig. 4 A to Fig. 4 J are provided for the embodiment of the present application
The corresponding structural representation of journey.
Specific embodiment
The specific embodiment to the application is described in detail below in conjunction with the accompanying drawings.
Fig. 1 is the preparation method schematic flow sheet of the compound substrate that the embodiment of the present application is provided.Fig. 2A to Fig. 2 D is this Shen
A series of corresponding structural representation of processing procedures in the preparation method of the compound substrate that please be provide.
As shown in figure 1, the preparation method is comprised the following steps：
S101, offer epitaxial substrate 20：
As an example, the epitaxial substrate can be Sapphire Substrate.Additionally, epitaxial substrate can also be：Silicon substrate,
Other III/V, II/VI race's Semiconductor substrates such as SiC.The structural representation of the epitaxial substrate 20 that Fig. 2A is to provide.It is to be appreciated that
The epitaxial substrate 20 can be the substrate of surfacing.
S102, the first graph layer 21 is formed in the epitaxial substrate 20, first graph layer 21 include it is multiple mutually
, there is gap 212 between the multiple the first mutually isolated raised structures 211 in the first raised structures 211 of isolation：
This step can be with specifically, form the first material using technological means customary in the art in epitaxial substrate 20
Layer, then carries out dry etching to the first material layer, forms the first graph layer 21.Fig. 2 B (1) and Fig. 2 B (2) are respectively to perform
Corresponding cross section structure schematic diagram and top view after the complete step.
Include multiple the first mutually isolated projections as shown in Fig. 2 B (1) and Fig. 2 B (2), on the first graph layer 21 of formation
, there is gap 212 between the plurality of the first mutually isolated raised structures 211 in structure 211.
In order to the first graph layer can be eroded subsequently through wet etching method, the material for preparing the first graph layer
Expect the material for that can be corroded by wet etching solution.As an example, can include for preparing the material of the first graph layer
SiO2, at least one in SiN, GaAs, AlGaAs, AlAs, AlGaInP, AlInP and GaInP.
It is to be appreciated that the first multiple mutually isolated raised structures 211 being arranged on the first graph layer 21 can be uniform
It is distributed on the first graph layer 21.As an example, the first raised structures 211 can include the drum from the bottom surface of the first graph layer 21
At least one in the circle bag, sub warhead, taper, pyramid, round platform and the bucking ladder structure that go out.
It is to be appreciated that due to mutually isolated between the first raised structures 211, so, be present in the first raised structures 211 it
Between gap 212 can interconnect, form one and be inlaid with the whole of multiple the first mutually isolated raised structures therebetween
Body structure.
As an example, one layer of SiO can be formed in epitaxial substrate 20 using the method for evaporation2Material layer.Then to SiO2
Material layer carries out dry etching, so as to form the first graph layer 21 including multiple the first mutually isolated raised structures 211.
S103, the first gallium nitride layer 22 is formed on the gap 212, the thickness of first gallium nitride layer 22 is less than institute
State the height of the first raised structures 211：
As an example, as shown in Figure 2 C, technological means customary in the art such as MOCVD (metal oxide can be used
Chemical vapor deposition, metal oxide chemical vapor deposition) gap 212 of the technique in epitaxial substrate 20
The first gallium nitride layer of upper extension 22, and first gallium nitride layer 22 thickness less than the first raised structures 211 height, in this way,
First raised structures 211 are not buried near the part of upper end by the first gallium nitride layer 22, and its exposure is outside.First projection
The part for being exposed in structure 211 outside can link together with the second raised structures on follow-up second graph layer 23, so that
The first graph layer 21 and second graph layer 23 is set to form overall Rotating fields.
Used as an example, the thickness of first gallium nitride layer 22 is no more than the height of first raised structures 211
2/3.Used as a more specific embodiment, the thickness of first gallium nitride layer 22 is the height of first raised structures 211
2/3.When the thickness of the first gallium nitride layer 22 is the 2/3 of the height of the first raised structures 211, the thickness of the first gallium nitride layer 22
Will not be too thin, in this way, the crystal mass of the first gallium nitride layer 22 for being formed is preferably, and, exposure the first raised structures outside
211 can form and be preferably connected with the second raised structures 231 on the second graph layer 23 being subsequently formed, so that first
The overall structure of a stabilization can be formed between the raised structures 231 of raised structures 211 and second.
It is to be appreciated that in the embodiment of the present application, the first gallium nitride layer 22 of formation is u-GaN for unintentional doped layer.
Can be interconnected due to being present in the gap 212 between the first raised structures 211, form one and be inlaid with multiple therebetween
The overall structure of the first mutually isolated raised structures 211, so, it is formed on the gap 212 in epitaxial substrate 20 first
Gallium nitride layer 22 is also an overall Rotating fields, and multiple the first mutually isolated raised structures are inlaid with the overall Rotating fields
211。
Because the first gallium nitride layer 22 is an overall Rotating fields, in this way, the gallium nitride quality for being formed is preferably, and should
First gallium nitride layer 22 is the nucleating layer of subsequent epitaxial layer, so, preferable first gallium nitride layer 22 of the crystal mass can be protected
The crystal mass of card subsequent epitaxial layer, and then ensure that the luminous efficiency of light emitting diode.
S104, formation second graph layer 23 on first raised structures 211 and on first gallium nitride layer 22,
The second graph layer 23 includes multiple second raised structures 231：
As shown in Figure 2 D, this step can use evaporated device on the first raised structures 211 and the first gallium nitride layer
Second material layer is formed on 22, dry etching is then carried out to the second material layer, formation includes multiple second raised structures 231
Second graph layer 23.
In order to second graph layer can be eroded subsequently through wet etching method, the material for preparing second graph layer
Expect the material for that can be corroded by wet etching solution.As an example, can include for preparing the material of second graph layer
SiO2, at least one in SiN, GaAs, AlGaAs, AlAs, AlGaInP, AlInP and GaInP.
It is to be appreciated that multiple second raised structures 231 being arranged on second graph layer 23 can be evenly distributed on second
On graph layer 23.As an example, the second raised structures 231 can include from second graph layer 21 bottom surface on bloat circle bag,
At least one in sub warhead, taper, pyramid, round platform and bucking ladder structure.
When being corroded by wet solution due to second graph layer 23, etchant solution is to enter second from the side of second graph layer
Graph layer starts corrosion, therefore, in order to subsequently all second raised structures 231 on second graph layer 23 can be corroded
Solution is eroded, and each described second raised structures 231 on second graph layer 23 interconnect, more specifically
Ground is said, in view of the second raised structures 231 are usually the small shape in the big top in bottom, so, on second graph layer 23 each the
The base of two raised structures 231 interconnects.In this way, etchant solution can be deep into second graph layer 23 on it is each
On individual second raised structures 231.
Further, since height of the thickness of the first gallium nitride layer 22 less than the first raised structures 211 on the first graph layer 21
Degree, so, be formed in second graph layer 23 on the second raised structures 231 can with below not by the first gallium nitride layer 22
The the first raised structures part buried links together, so that the first graph layer links together with second graph layer, shape
Into the figure Rotating fields for including two-layer graph layer.In this way, etchant solution is once entered on second graph layer 23 carries out corruption
When losing the second raised structures 231, with the carrying out of corrosion process, etchant solution can also penetrate into each on the first graph layer
First raised structures, so as to each first raised structures 211 be eroded.
It is to be appreciated that in order to accelerate wet etching speed, the floor space of the second raised structures 231 is more than the first raised structures
211 floor space, as more specific embodiment, each first projection described in the covering of the second raised structures 231 at least two
Structure 211.As an example, each second raised structures 231 covers 4 the first raised structures 211.
The specific embodiment of the preparation method of the compound substrate for being provided for the embodiment of the present application above.By the specific reality
As shown in Figure 2 D, it includes the compound substrate that the mode of applying is prepared：
Epitaxial substrate 20；
It is formed in the first graph layer 21 in the epitaxial substrate 20；First graph layer 21 includes multiple mutually isolated
The first raised structures 211, there is gap 212 in the multiple the first mutually isolated raised structures 211；
The first gallium nitride layer 22 on the gap 212 is formed in, the thickness of first gallium nitride layer 22 is less than institute
State the height of the first raised structures 211；
It is formed in the second graph layer 23 on first raised structures 211 and on first gallium nitride layer 22；Institute
Stating second graph layer 23 includes multiple second raised structures 231, and each described second raised structures 231 interconnects；
The material of first graph layer and second graph layer is the material that can be corroded by wet etching liquid.
Be can consider by the overall structure of above-mentioned compound substrate：First gallium nitride layer 22 is clipped in the first graph layer 21 and
Between two graph layers 23, because the thickness of the first gallium nitride layer 22 being clipped between the first graph layer 21 and second graph layer 23 is small
In the height of the first raised structures 211, so, the first raised structures 211 and the second graph layer upper 23 on the first graph layer 21
The second raised structures 231 can be connected with each other insertion, and again due to each second raised structures on second graph layer 23
231 interconnect, in this way, the first graph layer 21 and second graph layer 23 be capable of the integral interconnection of shape can quilt
The figure that wet etching solution is corroded.In this way, wet etching solution once since the side of compound substrate etch pattern layer
When, it can preferably penetrate into and etch into each raised structures (including the first raised structures 211 and second raised structures 231),
So the corrosion of subsequent epitaxial substrate 20 is facilitated to peel off.
Additionally, the first gallium nitride layer 22 being formed between the first graph layer 21 and second graph layer 23 can be regarded as it
On be inlaid with overall Rotating fields of multiple the first mutually isolated raised structures 211, first protruded from the overall Rotating fields
The part of raised structures 211 can as subsequent epitaxial layer nucleus, thus, the overall Rotating fields are conducive to growing crystal mass
Preferable gallium nitride.The crystal matter of the second gallium nitride layer 24 grown on the preferable gallium nitride of the crystal mass
Amount is also preferable, and then ensure that the crystal mass of the light emitting diode of subsequently epitaxial growing in compound substrate, so as to ensure
The luminous efficiency of light emitting diode.
Compound substrate provided based on above-described embodiment and preparation method thereof, the embodiment of the present application additionally provides a kind of vertical
The specific embodiment of the preparation method of structure light-emitting diode chip.
3 and Fig. 4 A to Fig. 4 J describe the pole of vertical structure light-emitting two of the embodiment of the present application offer in detail below in conjunction with the accompanying drawings
The specific embodiment of the preparation method of die.
Fig. 3 is the schematic flow sheet of the preparation method of the vertical stratification diode chip for backlight unit that the embodiment of the present application is provided.Fig. 4 A
A series of corresponding structure of processing procedures in the preparation method of the vertical stratification diode chip for backlight unit provided for the embodiment of the present application to Fig. 4 J
Schematic diagram.
As shown in figure 3, the preparation method of the vertical stratification diode chip for backlight unit of the application offer is comprised the following steps：
S301, using described in any of the above-described implementation method compound substrate preparation method prepare compound substrate 40：
As shown in Figure 4 A, the structure of compound substrate 40 is identical with the structure of the compound substrate that above-described embodiment is prepared.
S302, it is formed epitaxially one after the other in the compound substrate 40 second gallium nitride layer 41, n type gallium nitride layer 42, volume
Sub- well structure 43, electronic barrier layer 44, p-type gallium nitride layer 45 and ohmic contact layer 46：
As shown in Figure 4 B, the second nitridation is formed epitaxially one after the other in compound substrate 40 using technological means customary in the art
Gallium layer 41, n type gallium nitride layer 42, multi-quantum pit structure MQW (multiple quantum well) 43, electronic barrier layer EBL
(electron-blocking layer) 44, p-type gallium nitride layer 45 and ohmic contact layer 46.
S303, the formation conductive layer 47 on the ohmic contact layer 46：
As shown in Figure 4 C, conductive layer 47 is formed on ohmic contact layer 46.More specifically, the material of the conductive layer 47 is
ITO。
S304, the formation metal mirror layer 48 on the conductive layer 47：
As shown in Figure 4 D, metal mirror layer 48 is formed on conductive layer 47.
S305, the first surface of electrically-conductive backing plate 49 is linked together with the metal mirror layer 48：
It is to be appreciated that electrically-conductive backing plate 49 includes relative first surface and second surface.By the first table of electrically-conductive backing plate 49
Face links together with metal mirror layer 48.As an example, bonding technology can be used the first surface of electrically-conductive backing plate 49
It is bonded on the metal mirror layer 48.As an example, electrically-conductive backing plate 49 can be silicon substrate.It is specific as the one of the application
Embodiment, as shown in Figure 4 E, metal mirror layer 48 is bonded in using flip chip bonding process by the first surface of electrically-conductive backing plate 48
On.
S306, using wet etching method etch the first graph layer 21 and second graph layer 23 so that first figure
Layer 21 and second graph 23 village hollowing of layer, so as to by the epitaxial substrate 20 and first gallium nitride layer 22 from described second
Peeled off on gallium nitride layer 41：
This step can be specially：The structure formed by above-mentioned steps S301 to S305 is immersed in etchant solution,
And etchant solution is shaken, to accelerate wet etching speed, etchant solution is etched the first graph layer 21 and second graph layer 23, with
Make first graph layer 21 and second graph 23 village hollowing of layer, so as to by the epitaxial substrate 20 and first gallium nitride
Layer 22 is peeled off from second gallium nitride layer 41.Corresponding structural representation such as Fig. 4 F institutes after execution of step S306
Show.
It is to be appreciated that wet etching solution corrodes since the side of second graph layer 23, due to the first graph layer and the
Two graph layers 23 are joined together to form by being respectively provided with the first raised structures 211 thereon and the second raised structures 231
One overall Rotating fields, so, once etchant solution starts to corrode the second raised structures on second graph layer 23, with corroding
The carrying out of journey, the etchant solution can just penetrate into the inside of the first raised structures 211, realize the corruption to the first raised structures 211
Erosion such that it is able to the village hollowing of the first graph layer 21 and second graph layer 23 is realized, so as to by the epitaxial substrate 20 and institute
The first gallium nitride layer 22 is stated to be peeled off from second gallium nitride layer 41.
S307, second gallium nitride layer 41 is etched until exposing n type gallium nitride layer 42, so as in the n type gallium nitride
The making region 410 of first electrode is formed on layer 42：
As an example, ICP (inductively coupled plasma, inductively coupled plasma) engraving method can be used
Second gallium nitride layer 41 is etched until exposing n type gallium nitride layer 42, so as to form first on n type gallium nitride layer 42
The making region 410 of electrode.The step has performed corresponding structural representation as shown in Figure 4 G.
S308, the formation of making region 410 first electrode 411 in the first electrode：
First electrode 411 is formed on the making region 410 of first electrode using technological means customary in the art.The step
Suddenly corresponding structural representation has been performed as shown at figure 4h.
S309, the formation first electrode separation layer 412 around the first electrode 411, so that the first electrode 411
Realize isolating with the multi-quantum pit structure 43, electronic barrier layer 44, p-type gallium nitride layer 45, ohmic contact layer 46：
First electrode separation layer 412 is formed around the first electrode 411 using technological means customary in the art,
So that the first electrode 411 and the multi-quantum pit structure 43, electronic barrier layer 44, p-type gallium nitride layer 45, ohmic contact layer
46 realize isolation.The step has performed corresponding structural representation as shown in fig. 41.
S310, the formation second electrode 413 on the second surface of the electrically-conductive backing plate 49.
Second electrode is formed on the un-joined surfaces of the electrically-conductive backing plate 49 using technological means customary in the art
413.The step has performed corresponding structural representation as shown in fig. 4j.
The specific embodiment party of the preparation method of the light emitting diode chip with vertical for being provided for the embodiment of the present application above
Formula.
Compared to the method for the stripping for realizing substrate using laser lift-off mode in the prior art, the present invention is rotten using wet method
Etching method realizes that the mode of the stripping of substrate has advantages below：
The application is peeled off at peeling liner bottom using wet etching method, and wet etching equipment is compared to source, laser apparatus
Standby cost is relatively low.
Due to instead of laser lift-off technique, therefore, the specific embodiment can avoid in laser lift-off due to
The fragment phenomenon that the problems such as bonding technology is uneven causes, improves the yields of thin-film LED.
Additionally, the epitaxial substrate that the application is used can be Semiconductor substrate customary in the art, in this way, vertical to prepare
Structure light-emitting diode provides wider raw material selection.Additionally, the epitaxial substrate is not limited to SiC substrate, therefore, should
Preparation method also has low manufacture cost and the reliable advantage of raw material sources.
In addition, in the compound substrate that uses of the application, being formed between the first graph layer 21 and second graph layer 23 the
One gallium nitride layer 22 can be regarded as being inlaid with thereon an overall Rotating fields of multiple the first mutually isolated raised structures 211,
The the first raised structures part protruded from the overall Rotating fields can as the nucleus of subsequent epitaxial layer, thus, the integral layer knot
Structure is conducive to growing the preferable gallium nitride of crystal mass.Grown on the preferable gallium nitride of the crystal mass
The crystal mass of the second gallium nitride layer 24 is also preferable, and then ensure that the light-emitting diodes of the subsequently epitaxial growing in compound substrate
The crystal mass of pipe, so that the luminous efficiency of light emitting diode is higher.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of compound substrate, it is characterised in that including：
Epitaxial substrate is provided；
The first graph layer is formed in the epitaxial substrate, first graph layer includes multiple the first mutually isolated projection knots
, there is gap between the multiple the first mutually isolated raised structures in structure；
The first gallium nitride layer is formed on the gap, the thickness of first gallium nitride layer is less than first raised structures
Highly；
Second graph layer, the second graph layer bag are formed on first raised structures and on first gallium nitride layer
Multiple second raised structures are included, each described second raised structures interconnects；
The material of first graph layer and second graph layer is the material that can be corroded by wet etching liquid.
2. preparation method according to claim 1, it is characterised in that the thickness of first gallium nitride layer is no more than described
The 2/3 of the height of the first raised structures.
3. preparation method according to claim 1, it is characterised in that each described second raised structures covering at least one
First raised structures.
4. preparation method according to claim 1, it is characterised in that first graph layer and/or the second graph
The material of layer includes SiO2, at least one in SiN, GaAs, AlGaAs, AlAs, AlGaInP, AlInP and GaInP.
5. the preparation method according to claim any one of 1-4, it is characterised in that first raised structures and/or institute
Stating the second raised structures includes that what is bloated justifies at least one in bag, sub warhead, taper, pyramid, round platform and bucking ladder structure.
6. a kind of compound substrate, it is characterised in that including：
Epitaxial substrate；
It is formed in the first graph layer in the epitaxial substrate；First graph layer includes multiple the first mutually isolated projections
There is gap in structure, the multiple the first mutually isolated raised structures；
The first gallium nitride layer on the gap is formed in, the thickness of first gallium nitride layer is less than the first projection knot
The height of structure；
It is formed in the second graph layer on first raised structures and on first gallium nitride layer；The second graph layer
Including multiple second raised structures, each described second raised structures interconnects；First graph layer and described
The material of second graph layer is the material that can be corroded by wet etching liquid.
7. compound substrate according to claim 6, it is characterised in that the thickness of first gallium nitride layer is no more than described
The 2/3 of the height of the first raised structures.
8. compound substrate according to claim 6, it is characterised in that each described second raised structures covering at least one
First raised structures.
9. compound substrate according to claim 6, it is characterised in that first graph layer and/or the second graph
The material of layer includes SiO2, at least one in SiN, GaAs, AlGaAs, AlAs, AlGaInP, AlInP and GaInP.
10. a kind of preparation method of light emitting diode chip with vertical, it is characterised in that including：
Compound substrate is prepared using the preparation method described in claim any one of 1-5；
The second gallium nitride layer, the gallium nitride layer of the first doping type, MQW are formed epitaxially one after the other in the compound substrate
Structure, electronic barrier layer, the gallium nitride layer and ohmic contact layer of the second doping type；Wherein, first doping type and institute
The conduction type for stating the second doping type is opposite；
Conductive layer is formed on the ohmic contact layer；
Metal mirror layer is formed on the conductive layer；
The first surface of electrically-conductive backing plate is linked together with the metal mirror layer；
First graph layer and second graph layer are etched using wet etching method, so that first graph layer and second graph layer
Village hollowing, so as to the epitaxial substrate and first gallium nitride layer be peeled off from second gallium nitride layer；
Second gallium nitride layer is etched until exposing the gallium nitride layer of the first doping type, so as in first doping type
Gallium nitride layer on formed first electrode making region；
First electrode is formed in the making region of the first electrode；
First electrode separation layer is formed around the first electrode, so that the first electrode and the MQW knot
Structure, electronic barrier layer, the gallium nitride layer of the second doping type, ohmic contact layer realize isolation；
Second electrode is formed on the second surface of the electrically-conductive backing plate；The first surface and the second surface are relative.
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