CN102522468A - Light emitting diode with good n-type ohmic contact and manufacturing method thereof - Google Patents
Light emitting diode with good n-type ohmic contact and manufacturing method thereof Download PDFInfo
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- CN102522468A CN102522468A CN2012100035764A CN201210003576A CN102522468A CN 102522468 A CN102522468 A CN 102522468A CN 2012100035764 A CN2012100035764 A CN 2012100035764A CN 201210003576 A CN201210003576 A CN 201210003576A CN 102522468 A CN102522468 A CN 102522468A
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Abstract
The invention discloses a light emitting diode with good n-type ohmic contact and a manufacturing method thereof. According to the light emitting diode and the manufacturing method disclosed by the invention, a heavily doped n-type ohmic contact buffer layer with electron concentration reaching above 1*10<18> cm<-3> is formed at the n-side of a light emitting epitaxial layer; when a growth substrate is removed, the n-type ohmic contact buffer layer on the surface is exposed; the n-type ohmic contact buffer layer is made of an N-type GaN-based material with low energy gap and a non-nitrogen polar surface; an n-type ohmic contact electrode is manufactured on the n-type ohmic contact buffer layer; and a Ti/Al ohmic contact electrode can be continuously used, therefore, the ohmic contact problem of a nitrogen polar surface can be completely avoided, and lower working voltage of a film GaN-based light emitting device can be ensured.
Description
Technical field
The present invention relates to a kind of light-emitting diode itself and manufacture method, particularly relate to a kind of have good n type ohmic contact vertical structure light-emitting diode and manufacturing approach thereof.
Background technology
In recent years; In order to improve the luminous efficiency of gallium nitride based light emitting diode; Developed substrate transfer technology; For example on Sapphire Substrate, deposit the GaN base film, stick to the GaN base film on semiconductor or the metal substrate through wafer bond techniques or electroplating technology then, remove Sapphire Substrate with laser-stripping method again through MOCVD; Perhaps deposition GaN base film on SiC or Si substrate sticks to the GaN base film on semiconductor or the metal substrate through wafer bond techniques or electroplating technology then, removes SiC or Si substrate with chemical corrosion method again.So on the one hand can be through between epitaxial film and substrate, adding a reflector; Because going up, the GaN of nitrogen polar surface obtains coarse exiting surface through the photochemical corrosion method easily on the other hand; More than two aspects make the film GaN chip have higher light extraction efficiency; Substrate after shifting simultaneously has good thermal conduction characteristic, and the GaN base film chip of therefore transferring on the heat-radiating substrate has bigger advantage in big electric current application.
Yet, removes the GaN film surface that exposes after the growth substrates and be generally nitrogen polar surface, and the ohmic contact characteristic of nitrogen polar surface is different with the gallium polar surface; For example the Ohm contact electrode of the N type GaN of gallium polar surface generally adopts the Ti/Al Ohm contact electrode; And the contact electrode of the N type GaN of nitrogen polar surface is if still adopt the Ti/Al electrode, and then at initial time, Ti/Al and N type GaN demonstrate the ohmic contact characteristic more excellent than gallium polar surface; But after the temperature about 150 degree; Its contact performance is that deterioration is a Schottky contacts, shows as its forward operating voltage and raises, and has seriously restricted the light efficiency of film GaN chip.Form more representative the having of discussion of reason about it: people (APPLIED PHYSICS LETTERS 93,192105,2008) such as Hyunsoo Kim think that nitrogen room and surperficial gallium room and C, O atomic reaction cause the minimizing of surface nitrogen room; People (APPLIED PHYSICS LETTERS 94,182108,2009) such as Ho Won Jang think that the nitrogen-atoms in the body has compensated the nitrogen room to diffusion into the surface and caused the surface nitrogen room to be reduced.So far, these two research teams also do not propose on nitrogen polar surface, to make the effective ways of N type GaN Ohm contact electrode.Film upside-down mounting (TFFC) light-emitting diode that Philips Lumileds Lighting Company releases; Its N type Ohm contact electrode still is produced on the gallium polar surface N type GaN; Promptly can continue to continue to use the Ti/Al Ohm contact electrode; Therefore one of TFFC to show advantage be to avoid the problem of above-mentioned discussion nitrogen polar surface fully, but, therefore flip-chip technology is had relatively high expectations because of P, N electrode on the film need cohere positive and negative electrode zone corresponding on substrate respectively; Film breaks during in addition for fear of the laser lift-off Sapphire Substrate; Need to guarantee that film surface bears uniform impulsive force in laser lift-off sapphire moment; Therefore before the laser lift-off Sapphire Substrate, need between film and upside-down mounting bonding substrate, fill medium; The difficult control of the consistency of filling, device yield maybe be therefore influenced.
Summary of the invention
In order to solve present technological side's problem; The present invention proposes a kind of light-emitting diode with good n type ohmic contact itself and manufacture method, cause film GaN base luminescent device voltage integrity problem because of Ohm contact electrode on the nitrogen face n type GaN based semiconductor is subject to the temperature cracking with what overcome that existing rectilinear gallium nitride based vertical light emitting diode exists.
According to a first aspect of the invention, a kind of manufacturing approach with light emitting diode epitaxial structure of good n type ohmic contact may further comprise the steps: a growth substrate is provided; On growth substrates, form a Doped n-type ohmic contact resilient coating, its electron concentration is more than or equal to 1 * 10
18Cm
-3The luminous epitaxial loayer of epitaxial growth on n type ohmic contact resilient coating, its to down and on comprise at least: n type semiconductor layer, active layer, p type semiconductor layer.
Said n type ohmic contact resilient coating forms through epitaxial growth, and its material is Al
cIn
dGa
1-c-dN, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
The energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
The thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
According to a second aspect of the invention, a kind of light emitting diode epitaxial structure with good n type ohmic contact comprises: growth substrates; Doped n-type ohmic contact resilient coating is positioned on this growth substrates, and its electron concentration is more than or equal to 1 * 10
18Cm
-3Luminous epitaxial loayer is formed on the n type ohmic contact resilient coating, and it comprises n type semiconductor layer, active layer, p type semiconductor layer from bottom to top.
Said n type ohmic contact resilient coating is by Al
cIn
dGa
1-c-dN constitutes, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
The energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
The thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
Said n type ohmic contact resilient coating is the silicon doping nitride, and its doping content is more than or equal to 1 * 10
18Cm
-3
According to a third aspect of the present invention, a kind of manufacture method with light-emitting diode chip for backlight unit of good n type ohmic contact may further comprise the steps: a growth substrate is provided; On growth substrates, form a Doped n-type ohmic contact resilient coating, its electron concentration is more than or equal to 1 * 10
18Cm
-3The luminous epitaxial loayer of epitaxial growth on n type ohmic contact resilient coating, its to down and on comprise at least: n type semiconductor layer, active layer, p type semiconductor layer; One electrically-conductive backing plate is provided, luminous epitaxial loayer and electrically-conductive backing plate are linked; Peel off growth substrates, expose n type ohmic contact buffer-layer surface; On electrically-conductive backing plate, form first electrode, on n type ohmic contact buffer-layer surface, form second electrode.
Said n type ohmic contact resilient coating forms through low-temperature epitaxy growth, and its material is Al
cIn
dGa
1-c-dN, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
The energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
The thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
According to a fourth aspect of the present invention, a kind of light-emitting diode chip for backlight unit with good n type ohmic contact comprises: electrically-conductive backing plate, and it has positive and negative two surfaces; Luminous epitaxial loayer is positioned on the electrically-conductive backing plate front surface, and it comprises the n type semiconductor layer from top to down, active layer, p type semiconductor layer; Doped n-type ohmic contact resilient coating is positioned on the n type semiconductor layer, and its electron concentration is more than or equal to 1 * 10
18Cm
-3Second electrode is positioned on the n type ohmic contact resilient coating; First electrode is positioned on the anti-surface of electrically-conductive backing plate.
Said n type ohmic contact resilient coating is by Al
cIn
dGa
1-c-dN constitutes, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
The energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
The thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
Said n type ohmic contact resilient coating is the silicon doping nitride, and its doping content is more than or equal to 1 * 10
18Cm
-3
In gallium nitride based light emitting diode, with luminous outer layer growth on the n of high electron concentration type ohmic contact resilient coating, when removing growth substrates; The n type ohmic contact resilient coating of exposing surface; It is low energy gap, non-nitrogen polar surface N type GaN sill, and n type Ohm contact electrode is produced on this n type ohmic contact resilient coating, continues to use the Ti/Al Ohm contact electrode; Can avoid the problem of nitrogen polar surface ohmic contact, and can guarantee that the film GaN luminescent device has lower operating voltage.
Further; N type ohmic contact resilient coating is as initial nucleating layer, and highly doped, low temperature grows up, thus loose, the interatomic key knotting strength of its lattice a little less than; Therefore be beneficial to laser lift-off or wet corrosion technique; Reduce the big stress and the impulsive force that in the transient high temperature of growth substrates and the generation of LED film interface and mechanical separation process, produce because of laser lift-off skill significantly, can not increase the fault of construction of LED epitaxial loayer, the negative effect of internal quantum efficiency is lowered greatly.
Other features and advantages of the present invention will be set forth in specification subsequently, and, partly from specification, become obvious, perhaps understand through embodiment of the present invention.The object of the invention can be realized through the structure that in specification, claims and accompanying drawing, is particularly pointed out and obtained with other advantages.
Though will combine certain exemplary enforcement and method for using to describe the present invention hereinafter, and it will be appreciated by those skilled in the art that and be not intended to the present invention is limited to these embodiment.Otherwise, be intended to cover all substitutes, correction and the equivalent that are included in defined spirit of the present invention of appending claims and the scope.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is a kind of light emitting diode epitaxial structure sketch map with good n type ohmic contact of implementing according to the present invention.
Fig. 2 is a kind of generalized section with light-emitting diode chip for backlight unit of good n type ohmic contact of implementing according to the present invention.
Fig. 3 is the curve chart of the forward operating voltage of the preferred embodiment of the present invention.
Fig. 4 is the curve chart of the forward operating voltage after the wearing out of the preferred embodiment of the present invention.
Fig. 5 is the curve chart of the luminous power output of the preferred embodiment of the present invention.
The primary clustering symbol description:
101. epitaxial growth substrate
102. n type ohmic contact resilient coating
103. n type GaN layer
104. active layer
105. electronic barrier layer
106. p type GaN layer
201. p face reflective mirror and ohmic electrode layer
202. p face metal diffusion barrier layer and bonded layer
203. electrically-conductive backing plate
204. second electrode metal layer
205. first electrode metal layer.
Embodiment
Below in conjunction with accompanying drawing and preferred specific embodiment the present invention is further specified.In concrete designs with in making, the LED structure that the present invention proposes will can modify its part-structure and size according to the needs of application and manufacturing process enforcement within the specific limits, and choosing of material carried out accommodation.
Fig. 1 is a kind of light emitting diode epitaxial structure sketch map with good n type ohmic contact of implementing for the present invention.
As shown in Figure 1; A kind of light emitting diode epitaxial structure with good n type ohmic contact; Comprise: epitaxial growth substrate 101, n type ohmic contact resilient coating 102 is formed on the epitaxial growth substrate 101, and n type GaN based semiconductor 103 is formed on the n type ohmic contact resilient coating 102; Active layer 104 is formed on the n type GaN based semiconductor 103, and p type GaN based semiconductor 106 is formed on the active layer 104.
Wherein, Choosing of epitaxial growth substrate 101 includes but not limited to sapphire, aluminium nitride, gallium nitride, silicon, carborundum; Its crystal orientation includes but not limited to 0001 polarization such as grade, semipolar and non-polarized direction, and its surface texture can be planar structure or the patterned surface through handling especially.
N type ohmic contact resilient coating 102 is less than or equal to the aluminum indium nitride gallium Al of 3.4eV by specific composition, energy gap
cIn
dGa
1-c-dThe N layer constitutes its 0 ≦ c<1,0 ≦ d<1, c+d<1; Thickness is between 10 dusts～5000 dusts.In n type ohmic contact resilient coating 102, be mixed with sila matter, the concentration of silicon is more than or equal to 1 * 10
18Cm
-3, make the electron concentration of n type ohmic contact resilient coating 102 more than or equal to 1 * 10
18Cm
-3, its outer surface is non-nitrogen polar surface.In allowed limits, the electron concentration of n type ohmic contact resilient coating 102 high more during for the light-emitting diode chip for backlight unit of follow-up formation vertical stratification, helps making electrode structure at these n type ohmic contact resilient coating 102 outer surfaces more.
The thickness of n type GaN based semiconductor 103 is 20000 dusts～40000 dusts; Active layer 104 is a multi-quantum pit structure, with the InGaN layer as trap layer, GaN layer as barrier layer, wherein the thickness of trap layer is 18 dusts～30 dusts, the thickness of barrier layer is 80 dusts～200 dusts; The thickness of p type GaN based semiconductor 106 is between 1000 dusts～3000 dusts; Can 104 of p type GaN based semiconductor 106 and active layers insert one by the aluminum indium nitride gallium layer of the Mg that mixed as electronic barrier layer 105, its thickness is 100 dusts～600 dusts.
The vertical LED chip of Fig. 2 for being made according to light emitting diode epitaxial structure shown in Figure 1.
Light-emitting diodes chip as shown in Figure 2, as to have good n type ohmic contact comprises: electrically-conductive backing plate 203; Luminous epitaxial loayer is connected on the front of electrically-conductive backing plate through metal bonding layer 202 flip chip bonding; Luminous epitaxial loayer is the structure after the light emitting diode epitaxial structure shown in Fig. 1 is removed growth substrates, and it is p type GaN based semiconductor, electronic barrier layer 105, active layer 104, n type GaN based semiconductor 103, n type ohmic contact resilient coating 102 from top to down; Second electrode metal layer 204 is formed on the n type ohmic contact resilient coating 102, and first electrode metal layer 205 is formed on the back side of electrically-conductive backing plate 203.To get optical efficiency in order improving, can between p type GaN based semiconductor and electrically-conductive backing plate, to add p face reflective mirror and ohmic electrode layer 201, in metal bonding layer 202, add p face metal diffusion barrier layer.Because second electrode metal layer 204 is produced on the highly doped n type ohmic contact resilient coating 102; Avoided in the traditional rectilinear gallium nitride LED chip, its contact performance is that deterioration is the problem of Schottky contacts after the Ti/Al Ohm contact electrode of making on the nitrogen polar surface of n type GaN based semiconductor is met 150 ℃.
Aforementioned epitaxial structure of light-emitting diode shown in Figure 1 and light-emitting diode chip for backlight unit shown in Figure 2 are accomplished through following technology.
Step 1: epitaxial growth substrate 101 is provided, low-temperature epitaxy growth one doped n type ohmic contact resilient coating 102 on the surface of growth substrates, its electron concentration is more than or equal to 1 * 10
18Cm
-3, energy gap is less than or equal to 3.4eV.N type ohmic contact resilient coating 102 can be selected the Al that mixes silicon for use
cIn
dGa
1-c-dN, (0 ≦ c<1,0 ≦ d<1, c+d<1), thickness is 10 dusts～5000 dusts, and the doping content of its silicon is more than or equal to 1 * 10
18Cm
-3In order to obtain better n type ohmic contact, can suitably improve electron concentration, can be greater than or equal to 1 * 10 like its concentration
20Cm
-3Select GaN when n type ohmic contact resilient coating 102, its growth temperature can be 500 ~ 600 ℃.
Step 2: the luminous epitaxial loayer of epitaxial growth on n type ohmic contact resilient coating 102 forms epitaxial structure.Luminous epitaxial loayer to down and on comprise at least: n type GaN based semiconductor 103, active layer 104, p type semiconductor layer 106.The thickness of n type GaN based semiconductor 103 is 20000 dusts～40000 dusts; Active layer 104 is a multi-quantum pit structure, with the InGaN layer as trap layer, GaN layer as barrier layer, wherein the thickness of trap layer is 18 dusts～30 dusts, the thickness of barrier layer is 80 dusts～200 dusts; The thickness of p type GaN based semiconductor 106 is between 1000 dusts～3000 dusts; In order to submit the Internal photoeffect of luminescent layer to, can p type GaN based semiconductor 106 and 104 of active layers insert one by the aluminum indium nitride gallium layer of the Mg that mixed as electronic barrier layer 105, its thickness is 100 dusts～600 dusts.
Step 3: the size of definition chip, through dry method etch technology above-mentioned completion epitaxial wafer is carried out mesa etch, accomplish the chip-scale of epitaxial wafer and separate.Etch depth sees through the epitaxial loayer film at least, to epitaxial growth substrate 101 surfaces.
Step 4 a: electrically-conductive backing plate 203 is provided, luminous epitaxial loayer and electrically-conductive backing plate 203 are linked.On p type GaN based semiconductor 106, electrically-conductive backing plate 203, form metal bonding layer 202 respectively, adopt metal bonding technology that luminous epitaxial loayer and electrically-conductive backing plate 203 are linked together.In order to improve the optical efficiency of getting of chip, can on p type GaN based semiconductor 106, make p face reflective mirror and ohmic electrode layer 201, in metal bonding layer 202, adding p face metal diffusion barrier layer.
Step 5: peel off growth substrates 101.Employing is peeled off, grinding or wet etching, epitaxial growth substrate 101 is removed, epitaxial growth substrate and LED film separately, the LED film is stayed on the substrate that reverses and is exposed n type ohmic contact resilient coating 102 surfaces.
Step 6: on electrically-conductive backing plate, form bottom electrode metal level 205, on n type ohmic contact buffer-layer surface, form n face electrode metal layer 204, accomplish the making of vertical stratification LED.
In a preferred embodiment of the invention, press such thickness of setting each semiconductor layer shown in the table 1.
Table one
Fig. 3, Fig. 4, Fig. 5 show its evaluation result.
The curve chart of the forward operating voltage of each sample of the embodiment of the invention as shown in Figure 3, the forward operating voltage of nitride vertical structure light-emitting diode sample of the present invention are lower than the nitride vertical structure light-emitting diode sample of traditional handicraft.
The reliability of the forward operating voltage behind the curve chart of the forward operating voltage behind each sample of the embodiment of the invention as shown in Figure 4 aging, nitride vertical structure light-emitting diode sample of the present invention aging obviously is superior to the nitride vertical structure light-emitting diode sample of traditional handicraft.
The curve chart of the luminous power output of each sample of the embodiment of the invention as shown in Figure 5, the luminous power output of nitride vertical structure light-emitting diode sample of the present invention are higher than the nitride vertical structure light-emitting diode sample of traditional handicraft.
Claims (18)
1. have the manufacturing approach of the light emitting diode epitaxial structure of good n type ohmic contact, may further comprise the steps:
One growth substrate is provided;
On growth substrates, form a Doped n-type ohmic contact resilient coating, its electron concentration is more than or equal to 1 * 10
18Cm
-3
The luminous epitaxial loayer of epitaxial growth on n type ohmic contact resilient coating, its to down and on comprise at least: n type semiconductor layer, active layer, p type semiconductor layer.
2. the manufacturing approach of light emitting diode epitaxial structure according to claim 1 is characterized in that: said n type ohmic contact resilient coating forms through epitaxial growth, and its material is Al
cIn
dGa
1-c-dN, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
3. the manufacturing approach of light emitting diode epitaxial structure according to claim 1 and 2, it is characterized in that: the energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
4. according to the manufacturing approach of claim 1 or 2 or 3 described light emitting diode epitaxial structures, it is characterized in that: the thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
5. have the light emitting diode epitaxial structure of good n type ohmic contact, comprising:
One growth substrate;
One Doped n-type ohmic contact resilient coating is positioned on this growth substrates, and its electron concentration is more than or equal to 1 * 10
18Cm
-3
One luminous epitaxial loayer is formed on the n type ohmic contact resilient coating, and it comprises n type semiconductor layer, active layer, p type semiconductor layer from bottom to top.
6. light emitting diode epitaxial structure according to claim 5 is characterized in that: said n type ohmic contact resilient coating is by Al
cIn
dGa
1-c-dN constitutes, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
7. according to claim 5 or 6 described light emitting diode epitaxial structures, it is characterized in that: the energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
8. according to claim 5 or 6 or 7 described light emitting diode epitaxial structures, it is characterized in that: the thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
9. according to claim 5 or 6 or 7 or 8 described light emitting diode epitaxial structures, it is characterized in that: n type ohmic contact resilient coating is the silicon doping nitride, and its doping content is more than or equal to 1 * 10
18Cm
-3
10. have the manufacture method of the light-emitting diode chip for backlight unit of good n type ohmic contact, may further comprise the steps:
One growth substrate is provided;
On growth substrates, form a Doped n-type ohmic contact resilient coating, its electron concentration is more than or equal to 1 * 10
18Cm
-3
The luminous epitaxial loayer of epitaxial growth on n type ohmic contact resilient coating, its to down and on comprise at least: n type semiconductor layer, active layer, p type semiconductor layer;
One electrically-conductive backing plate is provided, luminous epitaxial loayer and electrically-conductive backing plate are linked;
Peel off growth substrates, expose n type ohmic contact buffer-layer surface;
On electrically-conductive backing plate, form first electrode, on n type ohmic contact buffer-layer surface, form second electrode.
11. the manufacture method of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: said n type ohmic contact resilient coating forms through epitaxial growth, and its material is Al
cIn
dGa
1-c-dN, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
12. the manufacturing approach according to claim 10 or 11 described light-emitting diode chip for backlight unit is characterized in that: the energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
13. the manufacturing approach according to claim 10 or 11 or 12 described light-emitting diode chip for backlight unit is characterized in that: the thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
14. have the light-emitting diode chip for backlight unit of good n type ohmic contact, comprising:
One electrically-conductive backing plate, it has positive and negative two surfaces;
One luminous epitaxial loayer is positioned on the electrically-conductive backing plate front surface, and it comprises the n type semiconductor layer from top to down, active layer, p type semiconductor layer;
One Doped n-type ohmic contact resilient coating is positioned on the n type semiconductor layer, and its electron concentration is more than or equal to 1 * 10
18Cm
-3
One first electrode is positioned on the anti-surface of electrically-conductive backing plate;
One second electrode is positioned on the n type ohmic contact resilient coating.
15. light-emitting diode chip for backlight unit according to claim 14 is characterized in that: said n type ohmic contact resilient coating is by Al
cIn
dGa
1-c-dN constitutes, wherein 0 ≦ c<1,0 ≦ d<1, c+d<1.
16. according to claim 14 or 15 described light-emitting diode chip for backlight unit, it is characterized in that: the energy gap of said n type ohmic contact resilient coating is less than or equal to 3.4eV.
17. according to claim 14 or the outer chip of 15 or 16 described light-emitting diodes, it is characterized in that: the thickness of said n type ohmic contact resilient coating is 10 dusts～5000 dusts.
18. according to claim 14 or 15 or 16 or 17 described light-emitting diode chip for backlight unit, it is characterized in that: said n type ohmic contact resilient coating is the silicon doping nitride, and its doping content is more than or equal to 1 * 10
18Cm
-3
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| US14/369,930 US9397253B2 (en) | 2012-01-09 | 2013-01-07 | Light emitting diode and manufacturing method therefor |
| PCT/CN2013/070141 WO2013104289A1 (en) | 2012-01-09 | 2013-01-07 | Light emitting diode and manufacturing method therefor |
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| US9397253B2 (en) | 2012-01-09 | 2016-07-19 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode and manufacturing method therefor |
| CN103730545A (en) * | 2013-12-26 | 2014-04-16 | 广州有色金属研究院 | Manufacturing method of AlGaN-based vertical structure deep ultraviolet LED |
| WO2017088546A1 (en) * | 2015-11-24 | 2017-06-01 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method therefor |
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