CN106801221A - Multistation Graphene fast-growth equipment - Google Patents
Multistation Graphene fast-growth equipment Download PDFInfo
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- CN106801221A CN106801221A CN201710186759.7A CN201710186759A CN106801221A CN 106801221 A CN106801221 A CN 106801221A CN 201710186759 A CN201710186759 A CN 201710186759A CN 106801221 A CN106801221 A CN 106801221A
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- outer tube
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- General Chemical & Material Sciences (AREA)
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- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a kind of multistation Graphene rapid elongation equipment that can be made full use of graphene growth equipment, including fixed platform, vavuum pump, gas transmission pipeline, heater, graphene growth process cavity are installed；The graphene growth process cavity has sealing flange, vacuum orifice, air inlet；The vacuum orifice is connected with vavuum pump；The air inlet is connected with gas transmission pipeline；The graphene growth process cavity at least has two；The graphene growth process cavity is installed on the stationary platform；The graphene growth process cavity has process cavity outer tube, and the heater is arranged on the outside of process cavity outer tube；It is provided with the installation fixed platform and heater is moved to heater mobile device on the outside of another process cavity outer tube from process cavity outer tube outside.The wasting of resources, improve production efficiency can be reduced using the multistation Graphene rapid elongation equipment.
Description
Technical field
The present invention relates to a kind of growth apparatus of Graphene, especially a kind of multistation Graphene fast-growth equipment.
Background technology
It is well-known：Although Graphene only one of which carbon atom thickness, because its own architectural characteristic shows it
Go out many first in the world, such as most thin, most light, most tough and tensile, resistivity is minimum, and Graphene is referred to as " dark fund " of material circle, 21
Century " king of new material ".
The prepare with scale of graphene film, widely studied by recent years, chemical vapour deposition technique is scale system
One of most promising method of standby graphene film.It is true at 1000 degree or so that CVD prepares high-quality graphene film
By the Viability carbon-based group of carbon source heat resolve under empty condition, generation stone is then further decomposed on the transition metal substrate such as Cu, Ni
Black alkene.However, rapidly, continuously prepare with scale large area, the method for high-quality graphene film never have and obtain big prominent
It is broken, Graphene preparation efficiency and yield are significantly limit, hinder the fast-developing paces of graphene film industry.
It is well known that the flow that CVD prepares graphene film is：After graphene growth substrate is put into process cavity, first
Equipment is warming up to 1000 degree or so of high temperature, then graphene growth substrate is annealed certain hour at these elevated temperatures, immediately
And be passed through graphene growth process gas and prepare Graphene, it is necessary to graphene product be removed high after graphene growth terminates
Warm process cavity fast cooling, takes out graphene product when body of heater is down to room temperature.In Graphene cooling, sampling process, if
Body of heater is also lowered the temperature together, then repeats heating, cooling process when descending secondary growth, then operating efficiency can only prepare 2-3 in extremely low one day
It is secondary；If graphene product is removed into high-temperature technology chamber, during sample is lowered the temperature, body of heater keeps high temperature constant, then treat sample
After cooling, take after sample advances high temperature chamber again, then can be directly entered annealing growth link, greatly improve Graphene production
Efficiency.But during graphene product cooling, taking sample, high-temperature furnace body is constantly in idle state, causes the wasting of resources.Though
There is patent to consider the problem before so, the utilization rate of high-temperature furnace body improved by the way of sampling is entered at high-temperature technology chamber two ends,
But the program is expanded space small, and the process time is short, is lowered the temperature, it is long to take the time, can still cause device resource to waste；Additionally, the party
Case sample transmission oar need to put in high-temperature technology chamber take, feeding sample, then the requirement to transmitting oar is also higher, such as requires that transmission oar is resistance to
High temperature, it is not scaling-off, on Graphene sample without influence etc., virtually increased device fabrication cost.
The content of the invention
The technical problems to be solved by the invention are to provide one kind and can make full use of graphene growth equipment to reduce
The wasting of resources, the multistation Graphene fast-growth equipment of improve production efficiency.
The technical solution adopted for the present invention to solve the technical problems is：It is fast the invention provides a kind of multistation Graphene
Fast growth apparatus, including fixed platform, vavuum pump, gas transmission pipeline, heater, graphene growth process cavity are installed；Institute
Stating graphene growth process cavity has sealing flange, vacuum orifice, air inlet；The vacuum orifice is connected with vavuum pump；It is described
Air inlet is connected with gas transmission pipeline；
The graphene growth process cavity at least has two；The graphene growth process cavity is arranged on fixed platform
On；The graphene growth process cavity has process cavity outer tube, and the heater is arranged on the outside of process cavity outer tube；It is described
Install to be provided with fixed platform and heater is moved into another process cavity outer tube outside from a process cavity outer tube outside
Heater mobile device.
Further, the graphene growth process cavity is circumferentially uniformly distributed on fixed platform is installed.
Preferably, the graphene growth process cavity is mounted vertically in installation fixed platform；The heater is to add
Heat cover, the heater is sleeved on process cavity outer tube；The heater mobile device includes rotating base and stretches
Device；The rotating base is fixedly mounted in installation fixed platform, and the retractor device is vertically installed on rotating base；Institute
The center line of fixing end that retractor device has with rotating base around rotating base is stated to be rotatably assorted；What the retractor device had
Telescopic end is located at the side of heater and is fixedly connected with heater.
Preferably, the graphene growth process cavity is transversely mounted in installation fixed platform；And the graphene growth
Point to the outside for installing fixed platform in one end that process cavity is provided with sealing flange；
The heater is heating mantles, and the heater is sleeved on process cavity outer tube；The heater movement
Device includes support column, turning arm and sliding block；One end of the turning arm rotates with support column around the axis of support column and is connected,
The other end of the turning arm is located at the top of heater, and the sliding block is slidably mounted on turning arm, the sliding block with plus
Thermal is fixedly connected.
Further, the graphene growth process cavity has in the inner chamber of one end of sealing flange that to be provided with uniform flow heat-insulated
Plate.
Further, it is respectively provided with the connecting pipe between the vacuum orifice and vavuum pump of each graphene growth process cavity
There is valve.
Further, on the connecting pipe between the air inlet and gas transmission pipeline of each graphene growth process cavity
It is provided with valve.
Further, the graphene growth process cavity has inner tube and technique outer tube；The air inlet is arranged on inner tube
The center of bottom；The vacuum orifice is arranged in the region between the outer ring that inner tube has and technique outer tube inner ring.
The beneficial effects of the invention are as follows：Multistation Graphene fast-growth equipment of the present invention has advantages below：
1) graphene growth process cavity can flexibly be set according to the Graphene preparation technology time, it is to avoid equipment is waited and made
Into the wasting of resources, meanwhile, the production efficiency of graphene film can be also greatly improved；
2) because each process cavity is to be independently arranged, then each process cavity can prepare different types of Graphene sample according to technique
Product；Additionally, the equipment can be expanded further, other stations can be arranged to other different CVD material preparation technology chambers；
3) it is single using gas or do not use process gas in Graphene temperature-fall period, therefore multiple Graphene process cavity works
Position can share a set of technique gas circuit；
4) different Graphene process cavity stations can be separately provided a set of vacuum-pumping system, also can public a set of vacuum take out
Gas system.
Brief description of the drawings
Fig. 1 is that graphene growth process cavity is vertically installed in multistation Graphene fast-growth equipment in the embodiment of the present invention
When front view；
Fig. 2 is structural representation when heater is disengaged from process cavity outer tube in Fig. 1；
Fig. 3 is structural representation when heater redirect to another process cavity outer tube top in Fig. 2；
Fig. 4 is that heater is arranged on structural representation when on the outside of another process cavity outer tube in Fig. 2；
Fig. 5 is that graphene growth process cavity is vertically installed in multistation Graphene fast-growth equipment in the embodiment of the present invention
And front view when being circumferentially uniformly distributed on plate is fixedly mounted；
Fig. 6 is that graphene growth process cavity is transversely mounted in multistation Graphene fast-growth equipment in the embodiment of the present invention
When front view；
Fig. 7 is structural representation when heater is disengaged from process cavity outer tube in Fig. 6；
Fig. 8 is structural representation when heater redirect to another process cavity outer tube top in Fig. 7；
Fig. 9 is that heater is arranged on structural representation when on the outside of another process cavity outer tube in Fig. 7；
Figure 10 is that graphene growth process cavity is laterally pacified in multistation Graphene fast-growth equipment in the embodiment of the present invention
Front view when filling and being circumferentially uniformly distributed on plate is fixedly mounted；
Indicated in figure：1- installation fixed platforms, 2- graphene growth process cavities, 21- process cavity outer tubes, 22- sealing flanges,
23- vacuum orifices, 24- air inlets, 25- uniform flow thermal insulation boards, 26- inner tubes, 3- vavuum pumps, 4- gas transmission pipelines, 5- heating dresses
Put, 6- heater mobile devices, 7- valves.
Specific embodiment
The present invention is further described with reference to the accompanying drawings and examples.
As shown in Figures 1 to 5, multistation Graphene fast-growth equipment of the present invention, including fixed platform is installed
1st, vavuum pump 3, gas transmission pipeline 4, heater 5, graphene growth process cavity 2；The graphene growth process cavity 2 has
Sealing flange 22, vacuum orifice 23, air inlet 24；The vacuum orifice 23 is connected with vavuum pump 3；The air inlet 24 and gas
Conveyance conduit 4 is connected；
The graphene growth process cavity 2 at least has two；The graphene growth process cavity 2 is arranged on fixed platform
On 1；The graphene growth process cavity 2 has process cavity outer tube 21, and the heater 5 is arranged on the outer of process cavity outer tube 21
Side；It is provided with the installation fixed platform 1 and heater 5 is moved into another technique from an outside of process cavity outer tube 21
The heater mobile device 6 in the outside of chamber outer tube 21.
Specifically, Graphene process cavity 2, the inner tube 26 and the material of process cavity outer tube 21 having can select quartz, graphite,
The exotic materials such as ceramics, the preferred quartz of the present invention；The outer tube of process cavity outer tube 21 is U-tube, and inner tube 26 is arranged in U-tube
Portion.Specifically, different Graphene process cavities 2 can be separately provided a vavuum pump 3, it is also possible to share a vavuum pump true 3.Institute
The air inlet 24 for stating graphene growth process cavity 2 can be set to wireway and lead the top air inlet of Graphene process cavity 2, bottom pumping
Or it is not provided with the direct air inlet of inner tube 26；The Graphene process cavity 2 can be set to vertical, can be configured as bedroom, same root
According to process requirements, settable part is vertical, part is horizontal.
During application：Lower the temperature after being terminated according to graphene growth, take time of sample, flexibly set 2,3
Or the station of multiple Graphene process cavities 2, i.e., after the station in first Graphene process cavity 2 terminates graphene growth, keep
Furnace temp is constant, and heater 5 is moved on into second station of Graphene process cavity 2 by heater mobile device 6
On, carry out graphene film preparation；If after the second station completed graphene film preparation, first Graphene process cavity 2
Station remain unfulfilled cooling and take, vary process, then continue for high-temperature furnace body to move to the 3rd station of Graphene process cavity 2
Carry out Graphene preparation；By that analogy, until first Graphene process cavity 2 completes the cooling of Graphene sample and take, varied
Journey, high-temperature heating body of heater is then back to first Graphene process cavity and carries out graphene growth.
In sum, multistation Graphene fast-growth equipment of the present invention has advantages below：
1) graphene growth process cavity can flexibly be set according to the Graphene preparation technology time, it is to avoid equipment is waited and made
Into the wasting of resources, meanwhile, the production efficiency of graphene film can be also greatly improved；
2) because each process cavity is to be independently arranged, then each process cavity can prepare different types of Graphene sample according to technique
Product；Additionally, the equipment can be expanded further, other stations can be arranged to other different CVD material preparation technology chambers；
3) it is single using gas or do not use process gas in Graphene temperature-fall period, therefore multiple Graphene process cavity works
Position can share a set of technique gas circuit；
4) different Graphene process cavity stations can be separately provided a set of vacuum-pumping system, also can public a set of vacuum take out
Gas system.
For the ease of installing, while be easy to distinguish each graphene growth process cavity 2, further, the Graphene life
Process cavity long 2 is circumferentially uniformly distributed on fixed platform 1 is installed.
The Main Function of the heater mobile device 6 be by heater 5 from a graphene growth process cavity 2
Move in another graphene growth process cavity 2.Therefore heater mobile device 6 has various implementations, such as machinery
Arm.
In order to reduce manufacturing cost, while being easy to operation, a kind of preferred mode is：The graphene growth process cavity 2
It is mounted vertically in installation fixed platform 1；The heater 5 is heating mantles, and the heater 5 is sleeved on process cavity outer tube
On 21；As shown in Figures 1 to 4, the heater mobile device 6 includes rotating base 62 and retractor device 61；The rotation
Turn base 62 to be fixedly mounted in installation fixed platform 1, the retractor device 61 is vertically installed on rotating base 62；It is described to stretch
Center line of the fixing end that compression apparatus 61 have with rotating base 62 around rotating base 62 is rotatably assorted；The retractor device 61 has
Some telescopic ends are located at the side of heater 5 and are fixedly connected with heater 5.
During being moved to heater 5 by heater mobile device 6：
First as shown in figure 1, heater 5 is located at an outside for the process cavity outer tube 21 of graphene growth process cavity 2.
After the graphene growth process cavity 2 terminates graphene growth, it is not necessary to heated again.Now, as shown in Fig. 2 keeping adding
Hot furnace temperature is constant, causes that heater 5 is raised by the retractor device 61 of heater mobile device 6, and depart from graphite
Alkene growth technique chamber 2.Then as shown in figure 3, being rotated on rotating base 62 by heater mobile device 6 so that heating
Device 5 is located at another top of graphene growth process cavity 2, then as shown in figure 4, stretching by heater mobile device 6
Compression apparatus 61 cause that heater 5 declines, until heater 5 is arranged on the outside of graphene growth process cavity 2.With such
Push away, until first Graphene process cavity 2 completes the cooling of Graphene sample and take, vary process, high-temperature heating body of heater is then returned
Graphene growth is carried out to first Graphene process cavity.So as to realize the transfer of heater 5；Realize to heater 5
Make full use of.
Another preferred mode is that the graphene growth process cavity 2 is transversely mounted in installation fixed platform 1, and
Point to the outside for installing fixed platform 1 in one end that sealing flange 22 is provided with the graphene growth process cavity 2；The heating
Device 5 is heating mantles, and the heater 5 is sleeved on process cavity outer tube 21；
As Figure 6-9, the heater mobile device 6 includes support column 63, turning arm 64 and sliding block 65；It is described
One end of turning arm 64 rotates with support column 63 around the axis of support column 63 and is connected, and the other end of the turning arm 64 is located at heating
The top of device 5, the sliding block 65 is slidably mounted on turning arm 64, and the sliding block 65 is fixedly connected with heater 5.
In use：
First as shown in fig. 6, heater 5 is located at an outside for the process cavity outer tube 21 of graphene growth process cavity 2.
After the graphene growth process cavity 2 terminates graphene growth, it is not necessary to heated again.Now, as shown in fig. 7, by moving
Sliding block 65 in dynamic heater mobile device 6 causes that heater 5 departs from graphene growth process cavity 2.Then such as Fig. 8 institutes
Show, by the turning arm 63 in rotatable heater mobile device 6 so that heater 5 is just to another graphene growth work
Skill chamber 2.Then as shown in figure 9, causing that heater 5 is arranged on separately by the sliding block 65 in mobile heating device mobile device 6
In one graphene growth process cavity 2.This analogizes, until first Graphene process cavity 2 complete the cooling of Graphene sample and take,
Process is varied, high-temperature heating body of heater is then back to first Graphene process cavity and carries out graphene growth.
In order that the entrance graphene growth process cavity 2 that process gas can be divided equally is obtained, and further, the Graphene life
Uniform flow thermal insulation board 25 is provided with the inner chamber of the one end of process cavity long 2 with sealing flange 22.
For the independent control for realizing vacuumizing each graphene growth process cavity 2, specifically, each graphene growth
Valve 7 is provided with connecting pipe between the vacuum orifice 23 and vavuum pump 3 of process cavity 2.
In order to realize adding each graphene growth process cavity 2 the independent control of process gas, specifically, each graphite
Valve 7 is provided with connecting pipe between the air inlet 24 and gas transmission pipeline 4 in alkene growth technique chamber 2.
In order that gas enters into graphene growth process cavity 2 from the middle multiple spot of inner tube 26, vacuum-pumping system is from stone
It is evacuated in region between the inner ring that the outer ring and technique outer tube 21 that the inner tube 26 in black alkene growth technique chamber 2 has have, is realized
Gas is dispersed in inside process cavity from centre, and is dispersed into being taken out by vacuum system in the middle of inner and outer pipes from process cavity top
Walk；Specifically, the graphene growth process cavity 2 has inner tube 26 and technique outer tube 21；The air inlet 24 is arranged on inner tube
The center of 26 bottoms；The vacuum orifice 23 be arranged on inner ring that the outer ring that inner tube 26 has has with technique outer tube 21 it
Between region in.
Claims (8)
1. multistation Graphene fast-growth equipment, including install fixed platform (1), vavuum pump (3), gas transmission pipeline (4),
Heater (5), graphene growth process cavity (2)；The graphene growth process cavity (2) with sealing flange (22), take out true
Eat dishes without rice or wine (23), air inlet (24)；The vacuum orifice (23) connects with vavuum pump (3)；The air inlet (24) conveys with gas
Pipeline (4) is connected；
It is characterized in that：The graphene growth process cavity (2) at least has two；Graphene growth process cavity (2) peace
In fixed platform (1)；The graphene growth process cavity (2) sets with process cavity outer tube (21), the heater (5)
Put the outside in process cavity outer tube (21)；It is provided with heater (5) a from process cavity on installation fixed platform (1)
Outer tube (21) outside moves to the heater mobile device (6) on the outside of another process cavity outer tube (21).
2. multistation Graphene fast-growth equipment as claimed in claim 1, it is characterised in that：The graphene growth technique
Chamber (2) is circumferentially uniformly distributed on fixed platform (1) is installed.
3. multistation Graphene fast-growth equipment as claimed in claim 2, it is characterised in that：The graphene growth technique
Chamber (2) is mounted vertically in installation fixed platform (1)；The heater (5) is heating mantles, heater (5) suit
On process cavity outer tube (21)；The heater mobile device (6) includes rotating base (62) and retractor device (61)；Institute
State rotating base (62) to be fixedly mounted in installation fixed platform (1), the retractor device (61) is vertically installed at rotating base
(62) on；The fixing end that the retractor device (61) has is rotated with rotating base (62) around the center line of rotating base (62) matches somebody with somebody
Close；The telescopic end that the retractor device (61) has is located at the side of heater (5) and is fixedly connected with heater (5).
4. multistation Graphene fast-growth equipment as claimed in claim 2, it is characterised in that：The graphene growth technique
Chamber (2) is transversely mounted in installation fixed platform (1)；And it is provided with sealing flange on the graphene growth process cavity (2)
(22) outside for installing fixed platform (1) is pointed in one end；The heater (5) is heating mantles, heater (5) set
On process cavity outer tube (21)；The heater mobile device (6) includes support column (63), turning arm (64) and sliding block
(65)；One end of the turning arm (64) rotates with support column (63) around the axis of support column (63) and is connected, the turning arm
(64) the other end is located at the top of heater (5), and the sliding block (65) is slidably mounted on turning arm (64), the sliding block
(65) it is fixedly connected with heater (5).
5. the multistation Graphene fast-growth equipment as described in claim 1,2,3 or 4, it is characterised in that：The Graphene
Uniform flow thermal insulation board (25) is provided with the inner chamber of the one end of growth technique chamber (2) with sealing flange (22).
6. the multistation Graphene fast-growth equipment as described in claim 1,2,3 or 4, it is characterised in that：Each Graphene
Valve (7) is provided with connecting pipe between the vacuum orifice (23) and vavuum pump (3) in growth technique chamber (2).
7. multistation Graphene fast-growth equipment as claimed in claim 1, it is characterised in that：Each graphene growth technique
Valve (7) is provided with connecting pipe between the air inlet (24) and gas transmission pipeline (4) in chamber (2).
8. multistation Graphene fast-growth equipment as claimed in claim 1, it is characterised in that：The graphene growth technique
Chamber (2) is with inner tube (26) and technique outer tube (21)；The air inlet (24) is arranged on the center of inner tube (26) bottom；Institute
State in the region that vacuum orifice (23) is arranged between the outer ring that inner tube (26) has and the inner ring that technique outer tube (21) has.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710186759.7A CN106801221B (en) | 2017-03-27 | 2017-03-27 | Multistation graphene fast-growth equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710186759.7A CN106801221B (en) | 2017-03-27 | 2017-03-27 | Multistation graphene fast-growth equipment |
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| Publication Number | Publication Date |
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| CN106801221A true CN106801221A (en) | 2017-06-06 |
| CN106801221B CN106801221B (en) | 2019-10-11 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000496A (en) * | 2013-01-08 | 2013-03-27 | 河南诺巴迪材料科技有限公司 | Rapid heating and cooling annealing furnace |
| CN103449428A (en) * | 2013-09-10 | 2013-12-18 | 常州二维碳素科技有限公司 | Graphene growing device and method |
| CN203846100U (en) * | 2013-12-12 | 2014-09-24 | 常州二维碳素科技有限公司 | Movable type multi-station deposition furnace used for graphene deposition |
| CN105293474A (en) * | 2014-08-01 | 2016-02-03 | 常州二维碳素科技股份有限公司 | Equipment for quickly preparing graphene and preparation method of graphene |
| CN206591177U (en) * | 2017-03-27 | 2017-10-27 | 重庆墨希科技有限公司 | Multistation graphene fast-growth equipment |
-
2017
- 2017-03-27 CN CN201710186759.7A patent/CN106801221B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000496A (en) * | 2013-01-08 | 2013-03-27 | 河南诺巴迪材料科技有限公司 | Rapid heating and cooling annealing furnace |
| CN103449428A (en) * | 2013-09-10 | 2013-12-18 | 常州二维碳素科技有限公司 | Graphene growing device and method |
| CN203846100U (en) * | 2013-12-12 | 2014-09-24 | 常州二维碳素科技有限公司 | Movable type multi-station deposition furnace used for graphene deposition |
| CN105293474A (en) * | 2014-08-01 | 2016-02-03 | 常州二维碳素科技股份有限公司 | Equipment for quickly preparing graphene and preparation method of graphene |
| CN206591177U (en) * | 2017-03-27 | 2017-10-27 | 重庆墨希科技有限公司 | Multistation graphene fast-growth equipment |
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| Publication number | Publication date |
|---|---|
| CN106801221B (en) | 2019-10-11 |
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