CN106801221B - Multistation graphene fast-growth equipment - Google Patents
Multistation graphene fast-growth equipment Download PDFInfo
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- CN106801221B CN106801221B CN201710186759.7A CN201710186759A CN106801221B CN 106801221 B CN106801221 B CN 106801221B CN 201710186759 A CN201710186759 A CN 201710186759A CN 106801221 B CN106801221 B CN 106801221B
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- outer tube
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- General Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses one kind can be by the multistation graphene rapid elongation equipment that graphene growth equipment makes full use of, including installation fixed platform, vacuum pump, gas transmission pipeline, heating device, graphene growth process cavity；The graphene growth process cavity has sealing flange, vacuum orifice, air inlet；The vacuum orifice is connected to vacuum pump；The air inlet is connected to gas transmission pipeline；There are two the graphene growth process cavity at least has；The graphene growth process cavity installation is on the stationary platform；The graphene growth process cavity has process cavity outer tube, and the outside of process cavity outer tube is arranged in the heating device；It is provided in the installation fixed platform and heating device is moved to the heating device mobile device on the outside of another process cavity outer tube on the outside of a process cavity outer tube.The wasting of resources can be reduced using the multistation graphene rapid elongation equipment, improve production efficiency.
Description
Technical field
The present invention relates to a kind of growth apparatus of graphene, especially a kind of multistation graphene fast-growth equipment.
Background technique
It is well-known: although only one carbon atom thickness of graphene, since its own architectural characteristic makes its performance
Many the first in the world out, such as it is most thin, most light, most tough and tensile, resistivity is minimum, graphene is referred to as " dark fund " of material circle, 21
Century " king of new material ".
The prepare with scale of graphene film, by extensive research in recent years, chemical vapour deposition technique is scale system
One of standby most promising method of graphene film.The graphene film of CVD method preparation high quality is true at 1000 degree or so
By the Viability carbon-based group of carbon source heat resolve under empty condition, is then further decomposed on the transition metal substrate such as Cu, Ni and generate stone
Black alkene.However, rapidly, continuously prepare with scale large area, the method for high-quality graphene film never obtain big dash forward
It is broken, graphene preparation efficiency and yield are significantly limited, the paces of graphene film industry fast development are hindered.
It is well known that CVD method prepares the process of graphene film are as follows: after graphene growth substrate is put into process cavity, first
Equipment is warming up to 1000 degree or so of high temperature, then graphene growth substrate is annealed certain time at these elevated temperatures, immediately
Be passed through graphene growth process gas and prepare graphene, to graphene growth after, need to remove graphene product high
Warm process cavity fast cooling, takes out graphene product when furnace body is down to room temperature.In graphene cooling, sampling process, if
Furnace body is also cooled down together, then repeats heating, cooling process when descending secondary growth, then can only prepare 2-3 within working efficiency extremely low one day
It is secondary；If graphene product is removed high-temperature technology chamber, during sample cools down, furnace body keeps high temperature constant, then to sample
It after cooling, takes after sample promotes high temperature chamber again, then can be directly entered annealing growth link, greatly improve graphene production
Efficiency.But during graphene product cooling, taking sample, high-temperature furnace body is constantly in idle state, results in waste of resources.Though
There is patent in view of the problem before so, the utilization rate of high-temperature furnace body improved in such a way that sample is kept forging ahead at high-temperature technology chamber both ends,
But the program is expanded space small, and the process time is short, is cooled down, it is long to take the time, still will cause device resource waste；In addition, the party
Case sample transmission paddle need to put in high-temperature technology chamber take, feeding sample, then to transmission paddle requirement it is also higher, such as require transmission paddle it is resistance to
High temperature, it is not scaling-off, on graphene sample without influence etc., virtually increase equipment manufacturing costs.
Summary of the invention
Technical problem to be solved by the invention is to provide one kind can make full use of graphene growth equipment to reduce
The wasting of resources, the multistation graphene fast-growth equipment for improving production efficiency.
The technical solution adopted by the present invention to solve the technical problems is: the present invention provides a kind of multistation graphene is fast
Fast growth apparatus, including installation fixed platform, vacuum pump, gas transmission pipeline, heating device, graphene growth process cavity；Institute
Graphene growth process cavity is stated with sealing flange, vacuum orifice, air inlet；The vacuum orifice is connected to vacuum pump；It is described
Air inlet is connected to gas transmission pipeline；
There are two the graphene growth process cavity at least has；The graphene growth process cavity is mounted on fixed platform
On；The graphene growth process cavity has process cavity outer tube, and the outside of process cavity outer tube is arranged in the heating device；It is described
It is provided in installation fixed platform and is moved to heating device on the outside of another process cavity outer tube on the outside of a process cavity outer tube
Heating device mobile device.
Further, the graphene growth process cavity is circumferentially uniformly distributed in installation fixed platform.
Preferably, the graphene growth process cavity is mounted vertically in installation fixed platform；The heating device is to add
Heat cover, the heating device are sleeved on process cavity outer tube；The heating device mobile device includes rotating base and stretches
Device；The rotating base is fixedly mounted in installation fixed platform, and the telescopic device is vertically installed on rotating base；Institute
It states fixing end that telescopic device has and rotating base is rotatably assorted around the center line of rotating base；What the telescopic device had
Telescopic end is located at the side of heating device and is fixedly connected with heating device.
Preferably, the graphene growth process cavity is transversely mounted in installation fixed platform；And the graphene growth
It is directed toward the outside of installation fixed platform in one end that process cavity is provided with sealing flange；
The heating device is heating mantles, and the heating device is sleeved on process cavity outer tube；The heating device is mobile
Device includes support column, rotating arm and sliding block；One end of the rotating arm is rotatablely connected around the axis and support column of support column,
The other end of the rotating arm is located at the top of heating device, and the sliding block is slidably mounted on rotating arm, the sliding block with plus
Thermal is fixedly connected.
Further, the graphene growth process cavity has one end of sealing flange interior intracavitary to be provided with uniform flow heat-insulated
Plate.
Further, it is respectively provided on the connecting pipe between the vacuum orifice and vacuum pump of each graphene growth process cavity
There is valve.
Further, on the connecting pipe between the air inlet and gas transmission pipeline of each graphene growth process cavity
It is provided with valve.
Further, the graphene growth process cavity has inner tube and technique outer tube；The air inlet is arranged in inner tube
The center of bottom；The vacuum orifice is arranged in the region between the outer ring that inner tube has and technique outer tube inner ring.
The beneficial effects of the present invention are: multistation graphene fast-growth equipment of the present invention has the advantage that
1) equipment waiting can be avoided to make according to the graphene preparation process time, flexible setting graphene growth process cavity
At the wasting of resources, meanwhile, the production efficiency of graphene film can also be greatly improved；
2) because each process cavity is to be independently arranged, then each process cavity can prepare different types of graphene sample according to technique
Product；In addition, the equipment can be expanded further, other stations can be arranged to other different CVD material preparation process chambers；
3) in graphene temperature-fall period, using gas is single or does not use process gas, therefore multiple graphene process cavity works
Position can share a set of technique gas circuit；
4) a set of vacuum-pumping system can be separately provided in different graphene process cavity stations, can also public a set of vacuum pumping
Gas system.
Detailed description of the invention
Fig. 1 is that graphene growth process cavity is vertically installed in multistation graphene fast-growth equipment in the embodiment of the present invention
When main view；
Fig. 2 is structural schematic diagram when heating device is disengaged from process cavity outer tube in Fig. 1；
Fig. 3 is structural schematic diagram when heating device is redirect to above another process cavity outer tube in Fig. 2；
Fig. 4 is structural schematic diagram when heating device is mounted on the outside of another process cavity outer tube in Fig. 2；
Fig. 5 is that graphene growth process cavity is vertically installed in multistation graphene fast-growth equipment in the embodiment of the present invention
And the main view when being circumferentially uniformly distributed in fixed mounting plate；
Fig. 6 is that graphene growth process cavity is transversely mounted in multistation graphene fast-growth equipment in the embodiment of the present invention
When main view；
Fig. 7 is structural schematic diagram when heating device is disengaged from process cavity outer tube in Fig. 6；
Fig. 8 is structural schematic diagram when heating device is redirect to above another process cavity outer tube in Fig. 7；
Fig. 9 is structural schematic diagram when heating device is mounted on the outside of another process cavity outer tube in Fig. 7；
Figure 10 is that graphene growth process cavity is laterally pacified in multistation graphene fast-growth equipment in the embodiment of the present invention
Dress and the main view when being circumferentially uniformly distributed in fixed mounting plate；
It is indicated in figure: 1- installation fixed platform, 2- graphene growth process cavity, 21- process cavity outer tube, 22- sealing flange,
23- vacuum orifice, 24- air inlet, 25- uniform flow thermal insulation board, 26- inner tube, 3- vacuum pump, 4- gas transmission pipeline, 5- heating dress
It sets, 6- heating device mobile device, 7- valve.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
As shown in Figures 1 to 5, multistation graphene fast-growth equipment of the present invention, including installation fixed platform
1, vacuum pump 3, gas transmission pipeline 4, heating device 5, graphene growth process cavity 2；The graphene growth process cavity 2 has
Sealing flange 22, vacuum orifice 23, air inlet 24；The vacuum orifice 23 is connected to vacuum pump 3；The air inlet 24 and gas
Conveyance conduit 4 is connected to；
There are two the graphene growth process cavity 2 at least has；The graphene growth process cavity 2 is mounted on fixed platform
On 1；The graphene growth process cavity 2 has process cavity outer tube 21, and the outer of process cavity outer tube 21 is arranged in the heating device 5
Side；It is provided in the installation fixed platform 1 and heating device 5 is moved to another technique on the outside of a process cavity outer tube 21
The heating device mobile device 6 in 21 outside of chamber outer tube.
Specifically, graphene process cavity 2, the material of the inner tube 26 and process cavity outer tube 21 that have can select quartz, graphite,
The heat-resisting materials such as ceramics, the present invention are preferably quartzy；21 outer tube of process cavity outer tube is U-tube, and inner tube 26 is arranged in U-tube
Portion.Specifically, a vacuum pump 3 can be separately provided in different graphene process cavities 2, vacuum pump true 3 can also be shared.Institute
The air inlet 24 for stating graphene growth process cavity 2 can be set to gas-guide tube and lead the 2 top air inlet of graphene process cavity, bottom pumping
Or it is not provided with the direct air inlet of inner tube 26；The graphene process cavity 2 can be set to vertical, can be configured as bedroom, same root
According to process requirements, settable part is vertical, part is horizontal.
During application: the time for the sample that cools down after according to graphene growth, takes, flexible setting 2,3
Or the station of multiple graphene process cavities 2 is kept that is, after the station of first graphene process cavity 2 terminates graphene growth
Furnace temp is constant, and heating device 5 is moved on to the station of second graphene process cavity 2 by heating device mobile device 6
On, carry out graphene film preparation；If after second station completed graphene film preparation, first graphene process cavity 2
Station remain unfulfilled cooling and take, vary process, then continue the station that high-temperature furnace body is moved to third graphene process cavity 2
Carry out graphene preparation；And so on, until first graphene process cavity 2 completes graphene sample cooling and takes, varied
Journey, high-temperature heating furnace body are then back to first graphene process cavity and carry out graphene growth.
In conclusion multistation graphene fast-growth equipment of the present invention has the advantage that
1) equipment waiting can be avoided to make according to the graphene preparation process time, flexible setting graphene growth process cavity
At the wasting of resources, meanwhile, the production efficiency of graphene film can also be greatly improved；
2) because each process cavity is to be independently arranged, then each process cavity can prepare different types of graphene sample according to technique
Product；In addition, the equipment can be expanded further, other stations can be arranged to other different CVD material preparation process chambers；
3) in graphene temperature-fall period, using gas is single or does not use process gas, therefore multiple graphene process cavity works
Position can share a set of technique gas circuit；
4) a set of vacuum-pumping system can be separately provided in different graphene process cavity stations, can also public a set of vacuum pumping
Gas system.
For the ease of installation, while convenient for distinguishing each graphene growth process cavity 2, further, the graphene is raw
Long process cavity 2 is circumferentially uniformly distributed in installation fixed platform 1.
The main function of the heating device mobile device 6 be by heating device 5 from a graphene growth process cavity 2
It is moved in another graphene growth process cavity 2.Therefore heating device mobile device 6 has a variety of implementations, such as mechanical
Arm.
In order to reduce manufacturing cost, while convenient for operation, a kind of preferred mode are as follows: the graphene growth process cavity 2
It is mounted vertically in installation fixed platform 1；The heating device 5 is heating mantles, and the heating device 5 is sleeved on process cavity outer tube
On 21；As shown in Figures 1 to 4, the heating device mobile device 6 includes rotating base 62 and telescopic device 61；The rotation
Turn pedestal 62 to be fixedly mounted in installation fixed platform 1, the telescopic device 61 is vertically installed on rotating base 62；It is described to stretch
Center line of the fixing end that compression apparatus 61 has with rotating base 62 around rotating base 62 is rotatably assorted；The telescopic device 61 has
Some telescopic ends are located at the side of heating device 5 and are fixedly connected with heating device 5.
During being moved by heating device mobile device 6 to heating device 5:
First as shown in Figure 1, heating device 5 is located at the outside of the process cavity outer tube 21 of a graphene growth process cavity 2.
After the graphene growth process cavity 2 terminates graphene growth, do not need to be heated again.At this point, as shown in Fig. 2, keeping adding
Hot stove is temperature-resistant, by the telescopic device 61 of heating device mobile device 6 heating device 5 is increased, and be detached from graphite
Alkene growth technique chamber 2.Then as shown in figure 3, being rotated on rotating base 62 by heating device mobile device 6, so that heating
Device 5 is located at another 2 top of graphene growth process cavity, then as shown in figure 4, stretching by heating device mobile device 6
Compression apparatus 61 declines heating device 5, until heating device 5 is mounted on the outside of graphene growth process cavity 2.With such
It pushes away, until first graphene process cavity 2 completes graphene sample cooling and take, vary process, high-temperature heating furnace body is then returned
Graphene growth is carried out to first graphene process cavity.To realize the transfer of heating device 5；It realizes to heating device 5
It makes full use of.
Another preferred mode, which is that the graphene growth process cavity 2 is transversely mounted on, to be installed in fixed platform 1, and
It is directed toward the outside of installation fixed platform 1 in one end that sealing flange 22 is provided in the graphene growth process cavity 2；The heating
Device 5 is heating mantles, and the heating device 5 is sleeved on process cavity outer tube 21；
As Figure 6-9, the heating device mobile device 6 includes support column 63, rotating arm 64 and sliding block 65；It is described
One end of rotating arm 64 is rotatablely connected around the axis and support column 63 of support column 63, and the other end of the rotating arm 64 is located at heating
The top of device 5, the sliding block 65 are slidably mounted on rotating arm 64, and the sliding block 65 is fixedly connected with heating device 5.
In use:
First as shown in fig. 6, heating device 5 is located at the outside of the process cavity outer tube 21 of a graphene growth process cavity 2.
After the graphene growth process cavity 2 terminates graphene growth, do not need to be heated again.At this point, as shown in fig. 7, passing through shifting
Sliding block 65 in dynamic heating device mobile device 6 makes heating device 5 be detached from graphene growth process cavity 2.Then such as Fig. 8 institute
Show, by the rotating arm 63 in rotatable heater mobile device 6, so that another graphene growth work of 5 face of heating device
Skill chamber 2.Then as shown in figure 9, being mounted on heating device 5 separately by the sliding block 65 in mobile heating device mobile device 6
In one graphene growth process cavity 2.This analogizes, until first graphene process cavity 2 complete graphene sample cooling and take,
Process is varied, high-temperature heating furnace body is then back to first graphene process cavity and carries out graphene growth.
In order to enable the entrance graphene growth process cavity 2 that process gas can be divided equally, further, the graphene is raw
There is long process cavity 2 the interior of one end of sealing flange 22 intracavitary to be provided with uniform flow thermal insulation board 25.
In order to realize the independent control vacuumized to each graphene growth process cavity 2, specifically, each graphene growth
Valve 7 is provided on connecting pipe between the vacuum orifice 23 and vacuum pump 3 of process cavity 2.
In order to realize the independent control for each graphene growth process cavity 2 being added process gas, specifically, each graphite
Valve 7 is provided on connecting pipe between the air inlet 24 and gas transmission pipeline 4 of alkene growth technique chamber 2.
In order to enable gas enters graphene growth process cavity 2 from the intermediate multiple spot of inner tube 26, vacuum-pumping system is from stone
It is evacuated, realizes in the region between inner ring that the outer ring having of inner tube 26 of black alkene growth technique chamber 2 and technique outer tube 21 have
Gas is dispersed in inside process cavity from centre, and is dispersed among inner and outer pipes from process cavity top and is taken out by vacuum system
It walks；Specifically, the graphene growth process cavity 2 has inner tube 26 and technique outer tube 21；The air inlet 24 is arranged in inner tube
The center of 26 bottoms；The vacuum orifice 23 be arranged in outer ring that inner tube 26 has and the inner ring that technique outer tube 21 has it
Between region in.
Claims (3)
1. multistation graphene fast-growth equipment, including installation fixed platform (1), vacuum pump (3), gas transmission pipeline (4),
Heating device (5), graphene growth process cavity (2)；The graphene growth process cavity (2) has sealing flange (22), takes out very
It eats dishes without rice or wine (23), air inlet (24)；The vacuum orifice (23) is connected to vacuum pump (3)；The air inlet (24) and gas convey
Pipeline (4) connection；
It is characterized by: there are two the graphene growth process cavity (2) at least has；Graphene growth process cavity (2) peace
On fixed platform (1)；The graphene growth process cavity (2) has process cavity outer tube (21), and the heating device (5) sets
Set the outside in process cavity outer tube (21)；It is provided on the installation fixed platform (1) by heating device (5) from a process cavity
The heating device mobile device (6) being moved on the outside of outer tube (21) on the outside of another process cavity outer tube (21)；
The graphene growth process cavity (2) is circumferentially uniformly distributed in installation fixed platform (1)；
The graphene growth process cavity (2) is mounted vertically in installation fixed platform (1)；The heating device (5) is heating
Cover, the heating device (5) are sleeved on process cavity outer tube (21)；The heating device mobile device (6) includes rotating base
(62) and telescopic device (61)；The rotating base (62) is fixedly mounted in installation fixed platform (1), the telescopic device
(61) it is vertically installed on rotating base (62)；The fixing end that the telescopic device (61) has is with rotating base (62) around rotation
The center line of pedestal (62) is rotatably assorted；The telescopic end that the telescopic device (61) has be located at the side of heating device (5) and
It is fixedly connected with heating device (5)；
The graphene growth process cavity (2) has inner tube (26) and technique outer tube (21)；Including air inlet (24) setting
Manage the center of (26) bottom；Vacuum orifice (23) setting has in the outer ring that inner tube (26) has and technique outer tube (21)
In region between some inner rings；
There is the graphene growth process cavity (2) the interior of the one end of sealing flange (22) intracavitary to be provided with uniform flow thermal insulation board
(25)。
2. multistation graphene fast-growth equipment as described in claim 1, it is characterised in that: each graphene growth technique
Valve (7) are provided on connecting pipe between the vacuum orifice (23) and vacuum pump (3) of chamber (2).
3. multistation graphene fast-growth equipment as described in claim 1, it is characterised in that: each graphene growth technique
Valve (7) are provided on connecting pipe between the air inlet (24) and gas transmission pipeline (4) of chamber (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710186759.7A CN106801221B (en) | 2017-03-27 | 2017-03-27 | Multistation graphene fast-growth equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710186759.7A CN106801221B (en) | 2017-03-27 | 2017-03-27 | Multistation graphene fast-growth equipment |
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| CN106801221A CN106801221A (en) | 2017-06-06 |
| CN106801221B true CN106801221B (en) | 2019-10-11 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000496A (en) * | 2013-01-08 | 2013-03-27 | 河南诺巴迪材料科技有限公司 | Rapid heating and cooling annealing furnace |
| CN103449428A (en) * | 2013-09-10 | 2013-12-18 | 常州二维碳素科技有限公司 | Graphene growing device and method |
| CN203846100U (en) * | 2013-12-12 | 2014-09-24 | 常州二维碳素科技有限公司 | Movable type multi-station deposition furnace used for graphene deposition |
| CN105293474A (en) * | 2014-08-01 | 2016-02-03 | 常州二维碳素科技股份有限公司 | Equipment for quickly preparing graphene and preparation method of graphene |
| CN206591177U (en) * | 2017-03-27 | 2017-10-27 | 重庆墨希科技有限公司 | Multistation graphene fast-growth equipment |
-
2017
- 2017-03-27 CN CN201710186759.7A patent/CN106801221B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000496A (en) * | 2013-01-08 | 2013-03-27 | 河南诺巴迪材料科技有限公司 | Rapid heating and cooling annealing furnace |
| CN103449428A (en) * | 2013-09-10 | 2013-12-18 | 常州二维碳素科技有限公司 | Graphene growing device and method |
| CN203846100U (en) * | 2013-12-12 | 2014-09-24 | 常州二维碳素科技有限公司 | Movable type multi-station deposition furnace used for graphene deposition |
| CN105293474A (en) * | 2014-08-01 | 2016-02-03 | 常州二维碳素科技股份有限公司 | Equipment for quickly preparing graphene and preparation method of graphene |
| CN206591177U (en) * | 2017-03-27 | 2017-10-27 | 重庆墨希科技有限公司 | Multistation graphene fast-growth equipment |
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| CN106801221A (en) | 2017-06-06 |
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