CN206858694U - The continuous growth apparatus of graphene that high-temperature technology chamber is vertically arranged - Google Patents
The continuous growth apparatus of graphene that high-temperature technology chamber is vertically arranged Download PDFInfo
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- CN206858694U CN206858694U CN201720309710.1U CN201720309710U CN206858694U CN 206858694 U CN206858694 U CN 206858694U CN 201720309710 U CN201720309710 U CN 201720309710U CN 206858694 U CN206858694 U CN 206858694U
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Abstract
The utility model discloses a kind of continuous growth apparatus of graphene for reducing Action of Gravity Field and being vertically arranged on the high-temperature technology chamber that graphene Forming Quality influences.The continuous growth apparatus of the graphene, including vavuum pump, blowing cooling chamber, rewinding cooling chamber, adapter cavity and the first vertically arranged high-temperature technology chamber, the second high-temperature technology chamber vacuumized for blowing cooling chamber and rewinding cooling chamber；The both ends of the first high-temperature technology chamber and the both ends of the second high-temperature technology chamber are provided with uniform flow heat-proof device；Heater is provided with the first high-temperature technology chamber and the second high-temperature technology chamber；Blowing graphene growth substrate is finally furled onto graphene-based bottom material receiving roller by blowing cooling zone guide roller, the first high-temperature technology chamber, adapter cavity, the second high-temperature technology chamber, rewinding cooling chamber guide roller successively on graphene growth substrate emptying roller.Influence of the gravity to product quality can be reduced using the continuous growth apparatus of the graphene, ensure graphene film final quality, improve production efficiency.
Description
Technical field
It the utility model is related to a kind of growth apparatus of graphene, the graphite that especially a kind of high-temperature technology chamber is vertically arranged
The continuous growth apparatus of alkene.
Background technology
It is well-known：An although graphene only carbon atom thickness, because its own architectural characteristic makes its performance
Go out many first in the world, such as most thin, most light, most tough and tensile, resistivity is minimum, graphene is referred to as " dark fund " of material circle, and 21
Century " king of new material ".
The prepare with scale of graphene film, widely studied by recent years, chemical vapour deposition technique is scale system
One of most promising method of standby graphene film.The graphene film that CVD prepares high quality is true at 1000 degree or so
By the Viability carbon-based group of carbon source heat resolve under empty condition, generation stone is then further decomposed on the transition metal substrate such as Cu, Ni
Black alkene.However, rapidly, continuously prepare with scale large area, the method for high-quality graphene film never obtain big dash forward
It is broken, graphene preparation efficiency and yield are significantly limit, hinders the fast-developing paces of graphene film industry.
Volume to volume growth graphene is a dynamic growth process, has difference substantially with chip static growth.It is right
Height for a long time is carried out near its fusing point typically by graphene growth substrate in the graphene of sheet material batch (-type) growth high quality
Annealing, makes polycrystalline growth substrate crystallize again, increases growth substrate domain area, and the graphene for being advantageous to prepare high quality is thin
Film.Although the existing patent volume to volume that begins one's study prepares graphene equipment and technique in recent years, because only setting a high temperature
Process cavity, annealing and growth are carried out simultaneously, are difficult to realize the controllable preparation of high-quality graphene.For a high-temperature technology chamber,
If first carrying out volume to volume high annealing, then refund to carry out volume to volume graphene growth, have a strong impact on graphene growth efficiency.
In addition, patent does not consider that high temperature heat radiation influences on sealing device and technique intracavity gas are uniformly distributed problem before.
Utility model content
Technical problem to be solved in the utility model is to provide one kind can be pre- by graphene growth substrate high annealing
Processing is synchronous with high growth temperature to be carried out, while reduces Action of Gravity Field to graphene growth substrate surface pattern and the height of appearance effects
The continuous growth apparatus of graphene that warm process cavity is vertically arranged.
Technical scheme is used by the utility model solves its technical problem：
The utility model provides the continuous growth apparatus of graphene that a kind of high-temperature technology chamber is vertically arranged, including blowing is cold
But chamber, rewinding cooling chamber and the vavuum pump vacuumized for the blowing cooling chamber and rewinding cooling chamber；The blowing cooling
Intracavitary is provided with graphene growth substrate emptying roller and blowing cooling zone guide roller, and graphene is provided with the rewinding cooling chamber
Substrate material receiving roller and rewinding cooling chamber guide roller；
The continuous growth apparatus of graphene that high-temperature technology chamber is vertically arranged, in addition to the first high-temperature technology chamber, the second high temperature
Process cavity and adapter cavity；The both ends of the first high-temperature technology chamber and the both ends of the second high-temperature technology chamber be provided with uniform flow every
Thermal；Heater is provided with the first high-temperature technology chamber and the second high-temperature technology chamber；
The first high-temperature technology chamber is vertically arranged with the second high-temperature technology chamber；Described first high-temperature technology chamber one end with
Blowing cooling chamber is connected and connected, and the other end is connected and connected with adapter cavity, described second high-temperature technology chamber one end and adapter cavity
Connect and connect, the other end is connected and connected with rewinding cooling chamber；First high-temperature technology chamber and second high in the adapter cavity
Position corresponding to warm process cavity is provided with transition roller；
Blowing graphene growth substrate is successively by blowing cooling zone guide roller, first on graphene growth substrate emptying roller
Transition roller, the second high-temperature technology chamber, rewinding cooling chamber guide roller in high-temperature technology chamber, adapter cavity are finally furled to graphene-based
On the material receiving roller of bottom.
Further, the tension detecting apparatus of detection graphene film tension force is provided with the adapter cavity.
Preferably, the rewinding cooling chamber guide roller uses water cooling guide roller.
Further, the both ends of the first high-temperature technology chamber by multiple spot inlet seal flange respectively with blowing cooling chamber and
Adapter cavity connects, the both ends of the second high-temperature technology chamber by multiple spot inlet seal flange respectively with adapter cavity and rewinding cooling chamber
Connection.
Preferably, the multiple spot inlet seal flange includes outward flange, inner flange and O-ring seal, the inner flange tool
There is boss end, the outward flange is provided with the groove matched with inner flange, and the O-ring seal is arranged in groove, the interior method
Blue boss end is inserted in the groove of outward flange, and top tight sealing cushion rubber, and connection inner flange inner ring is provided with the inner flange
Venting channels.
Preferably, the uniform flow heat-proof device is arranged on including at least two layers of thermal insulation board and support column, the support column
Between adjacent two layers thermal insulation board；Central through hole and equally distributed air-vent, the adjacent two layers are provided with the thermal insulation board
Air-vent on thermal insulation board is dislocatedly distributed.
Further, the central through hole on the thermal insulation board is groove radially.
Preferably, the blowing cooling chamber is provided with a vavuum pump, and the rewinding cooling chamber is provided with a vavuum pump.
Preferably, the heater uses resistance heater.
The beneficial effects of the utility model are：The graphene that high-temperature technology chamber described in the utility model is vertically arranged is continuous
Growth apparatus is incited somebody to action due to being provided with two high-temperature technology chambers between blowing cooling chamber, rewinding cooling chamber, and by adapter cavity
Two high-temperature technology chambers separate；Two high-temperature technology chambers are vertically arranged simultaneously；Therefore by graphene growth substrate high annealing
Pretreatment is carried out in two high-temperature technology intracavitary respectively with high growth temperature, and is synchronously carried out, and has both solved base treatment process
The freedom of middle temperature setting can choose at random the process gas during base treatment again, exclude graphene growth carbon source pair
Influence in substrate surface processing procedure.By the setting of Multicarity, links during graphene growth are distributed to respectively
Separately carried out in cavity, avoid each link in volume to volume growth course from influencing each other, and influence graphene film final quality；Its
It is secondary, enable to each technique synchronously to carry out by the setting of Multicarity, therefore the preparation of volume to volume graphene film can be improved
Efficiency.Again, because the first high-temperature technology chamber and the second high-temperature technology chamber are vertically arranged；Therefore graphene growth substrate
It is vertical distribution in the first high-temperature technology chamber and the second high-temperature technology intracavitary, due to the effect of gravity, graphene growth substrate
It can naturally droop, ensure that graphene growth substrate in the state of smoothly, avoids working as graphene growth sole plain cloth all the time
, it is necessary to could be stretched in the presence of compared with hightension when putting.Therefore gravity can be reduced to graphene growth substrate surface
Flatness and outward appearance are being annealed and the influence in higher temperature growth processes, can ensure the quality of graphene film.
Brief description of the drawings
Fig. 1 is that the structure for the continuous growth apparatus of graphene that the utility model embodiment high temperature process cavity is vertically arranged is shown
It is intended to；
Fig. 2 is the structure diagram that heat-proof device is flowed in the utility model embodiment；
Fig. 3 is the structure diagram of multiple spot inlet seal flange in the utility model embodiment；
Indicated in figure：1- blowing cooling chambers, 2- the first high-temperature technology chambers, 3- the second high-temperature technology chambers, 4- rewinding cooling chambers,
The graphene-based bottom material receiving rollers of 41-, 42- rewinding cooling chamber guide rollers, 5- adapter cavities, 51- tension detecting apparatus, 52- transition rollers, 6-
Graphene growth substrate, 7- vavuum pumps, 8- multiple spot inlet seal flanges, 81- venting channels, 82- outward flanges, 83- inner flanges,
84- O-ring seals, 9- uniform flow heat-proof devices, 91- thermal insulation boards, 92- support shafts, 93- central through holes, 10- heaters, 11- graphite
Alkene growth substrate emptying roller, 12- blowings cooling zone guide roller.
Embodiment
The utility model is further illustrated with reference to the accompanying drawings and examples.
As shown in Figure 1 to Figure 3, continuously growth is set the graphene that high-temperature technology chamber described in the utility model is vertically arranged
It is standby, including blowing cooling chamber 1, rewinding cooling chamber 4 and vacuumized for the blowing cooling chamber 1 and rewinding cooling chamber 4 true
Empty pump 7；Graphene growth substrate emptying roller 11 and blowing cooling zone guide roller 12 are provided with the blowing cooling chamber 1, it is described
It is provided with rewinding cooling chamber 4 with graphene-based bottom material receiving roller 41 and rewinding cooling chamber guide roller 42；
The continuous growth apparatus of graphene that high-temperature technology chamber is vertically arranged, in addition to the first high-temperature technology chamber 2, the second high temperature
Process cavity 3 and adapter cavity 5；The both ends of the first high-temperature technology chamber 2 and the both ends of the second high-temperature technology chamber 3 are provided with even
Flow heat-proof device 9；Heater 10 is provided with the first high-temperature technology chamber 2 and the second high-temperature technology chamber 3；
The first high-temperature technology chamber 2 is vertically arranged with the second high-temperature technology chamber 3；The first high-temperature technology chamber 2 one
End be connected and connect with blowing cooling chamber 1, the other end is connected and connected with adapter cavity 5, described one end of second high-temperature technology chamber 3 and
Adapter cavity 5 is connected and connected, and the other end is connected and connected with rewinding cooling chamber 4；First high-temperature technology chamber 2 in the adapter cavity 5
And second position corresponding to high-temperature technology chamber 3 be provided with transition roller 52；
Blowing graphene growth substrate 6 passes through blowing cooling zone guide roller successively on graphene growth substrate emptying roller 11
12nd, the transition roller 52 in the first high-temperature technology chamber 2, adapter cavity 5, the second high-temperature technology chamber 3, rewinding cooling chamber guide roller 42 are final
Furl on graphene-based bottom material receiving roller 41.
Specifically, the main function of the vavuum pump 7 vacuumized for the blowing cooling chamber 1 and rewinding cooling chamber 4
It is that whole system is vacuumized, especially blowing cooling chamber 1 and rewinding cooling chamber 4 is vacuumized.Blowing is cooled down
The mode that chamber 1 and rewinding cooling chamber 4 vacuumize, directly set on blowing cooling chamber 1 and rewinding cooling chamber 4 between can using
There is vavuum pump 7；Blowing cooling chamber 1 and rewinding cooling chamber 4, which can each be separately provided vavuum pump 7, can also share a vavuum pump
7；It can also use and vavuum pump 7 is arranged on high-temperature technology chamber or adapter cavity 5, pass through the first high-temperature technology chamber 2 and blowing
Sealing flange air inlet between sealing flange and the second high-temperature technology chamber 3 and rewinding cooling chamber 4 between cooling chamber 1, can also be real
Existing multi-chamber technique is separately carried out.
Specifically, blowing graphene growth substrate 6 is cold by blowing successively on the graphene growth substrate emptying roller 11
But area's guide roller 12, the first high-temperature technology chamber 2, adapter cavity 5, the second high-temperature technology chamber 3, rewinding cooling chamber guide roller 42 are finally rolled up
Receive and refer to that blowing graphene growth substrate 6 is by leading on graphene growth substrate emptying roller 11 on graphene-based bottom material receiving roller 41
It is oriented to roller 12, then in turn through the first high-temperature technology chamber 2, adapter cavity 5, the second high-temperature technology chamber 3, and high by first
Inwall when warm process cavity 2, adapter cavity 5, the second high-temperature technology chamber 3 not with each cavity contacts, finally by rewinding cooling chamber
Guide roller 42 is final after being oriented to be furled onto graphene-based bottom material receiving roller 41.
Specifically, position corresponding to first high-temperature technology chamber 2 and the second high-temperature technology chamber 3 is all provided with the adapter cavity 5
It is equipped with transition roller 52 to refer to when the first high-temperature technology chamber 2 and the second high-temperature technology chamber 3 are respectively positioned on 5 top of adapter cavity, transition
In chamber 5 transition roller 52 is provided with immediately below first high-temperature technology chamber 2 and immediately below the second high-temperature technology chamber 3；Or when the
When one high-temperature technology chamber 2 and the second high-temperature technology chamber 3 are respectively positioned on 5 lower section of adapter cavity, the first high-temperature technology chamber 2 in adapter cavity 5
It is provided with transition roller 52 directly over surface and the second high-temperature technology chamber 3, or the first high-temperature technology chamber 2 and second is high
Any one in warm process cavity 3 is located at the top of adapter cavity 5, and when another is located at 5 lower section of adapter cavity, it is corresponding in adapter cavity 5
Position be provided with transition roller 52.
During production:
Graphene growth substrate 6 is arranged on the graphene growth substrate emptying roller 11 of blowing cooling chamber 1, passed through first
Blowing causes one end of graphene growth substrate 6 successively by blowing cooling zone guide roller 12, the first high-temperature technology chamber 2, transition
Chamber 5, the second high-temperature technology chamber 3, rewinding cooling chamber guide roller 42, are furled on graphene-based bottom material receiving roller 41.Then by true
Empty pump vacuumizes to blowing cooling chamber 1, rewinding cooling chamber 4.Then by setting having heaters on the first high-temperature technology chamber 2
10 pair of first high-temperature technology chamber 2 heats so that the temperature in the first high-temperature technology chamber 2 reaches graphene high annealing requirement
Temperature, the second high-temperature technology chamber 3 is heated by the heater 10 set on the second high-temperature technology chamber 3 so that second
Temperature in high-temperature technology chamber 3 reaches the temperature of graphene growth requirement；Simultaneously corresponding technique is filled with high-temperature technology intracavitary
Gas.Then start the blowing of graphene growth substrate emptying roller 11, start graphene-based bottom material receiving roller 41 to graphene growth base
Collected at bottom 6.So that graphene growth substrate 6 carries out high annealing in the first high-temperature technology chamber 2 respectively, while
Graphene high growth temperature is carried out in second high-temperature technology chamber 3, so as to realize the continuous production of graphene film.In the first high temperature work
When high annealing is carried out in skill chamber 2 and carrying out high growth temperature in the second high-temperature technology chamber 3, due to the first high-temperature technology chamber
2 are vertically arranged with the second high-temperature technology chamber 3；Therefore graphene growth substrate 6 is in the first high-temperature technology chamber 2 and the second high temperature work
It is vertical distribution in skill chamber 3, due to the effect of gravity, graphene growth substrate 6 can naturally droop, and ensure graphene growth base
Bottom 6 in the state of smoothly, is avoided when graphene growth substrate 6 is horizontally disposed, it is necessary in the effect compared with hightension all the time
Under could be stretched.Therefore can reduce gravity to the surface smoothness of graphene growth substrate 6 and outward appearance in high annealing and
Influence in higher temperature growth processes, the quality of graphene film product can be ensured.
In summary, the continuous growth apparatus of graphene that high-temperature technology chamber described in the utility model is vertically arranged due to
It is provided with two high-temperature technology chambers between blowing cooling chamber 1, rewinding cooling chamber 4, and by adapter cavity 5 by two high-temperature technologies
Chamber separates；Two high-temperature technology chambers are vertically arranged simultaneously；Therefore by graphene growth substrate the pretreatment of high temperature anneal and high temperature
Growth is carried out in two high-temperature technology intracavitary respectively, and is synchronously carried out, and has both solved temperature setting during base treatment
Freedom can choose at random the process gas during base treatment again, exclude graphene growth carbon source to substrate surface processing
During influence.By the setting of Multicarity, links during graphene growth are distributed in each cavity separately to enter
OK, avoid each link in volume to volume growth course from influencing each other, and influence graphene film final quality；Secondly, multi-cavity is passed through
The setting of body enables to each technique synchronously to carry out, therefore can improve volume to volume graphene film preparation efficiency.Again, by
It is vertically arranged with the second high-temperature technology chamber 3 in the first high-temperature technology chamber 2；Therefore graphene growth substrate 6 is high first
It is vertical distribution in the warm high-temperature technology chamber 3 of process cavity 2 and second, due to the effect of gravity, graphene growth substrate 6 can nature
It is sagging, ensure that graphene growth substrate 6 in the state of smoothly, is avoided when graphene growth substrate 6 is horizontally disposed all the time,
Need to be stretched in the presence of compared with hightension.Therefore gravity can be reduced to the surfacing of graphene growth substrate 6
Degree and influence of the outward appearance in high annealing and higher temperature growth processes, the quality of graphene film product can be ensured.
In order to detect the tension force of graphene growth substrate 6 in real time, so as to know the matter of graphene growth substrate 6
Amount, further, as shown in Fig. 2 being provided with the tension force detection dress of the tension force of detection graphene growth substrate 6 in the adapter cavity 5
Put 51.By setting tension detecting apparatus 51 to monitor the tension force of the base material of graphene growth substrate 6, so as to according to tension force
The dispensing speed of big minor adjustment graphene growth substrate emptying roller 11 and the material recovering speed of the graphene-based bottom material receiving roller 41 of control,
Ensure product quality.
It is further in the utility model to improve the cooling rate for growing graphene-based bottom, the rewinding cooling chamber
Guide roller 42 uses water cooling guide roller.So as to which the temperature for growing graphene-based bottom quickly is reduced into room temperature, avoid winding
Cheng Zhong, being contracted because thermal expansion is cool causes the reduction of graphite film quality.
The blowing cooling chamber 1, the first high-temperature technology chamber 2, the second high-temperature technology chamber 3, rewinding cooling chamber 4, adapter cavity 5 it
Between can be attached in several ways, for example weld, or be attached using common flange.For the ease of the peace of equipment
Dress, safeguard, while be easy to be passed through process gas into process cavity, it is preferred that the both ends of the first high-temperature technology chamber 2 are by more
Point inlet seal flange 8 is connected with blowing cooling chamber 1 and adapter cavity 5 respectively, and the both ends of the second high-temperature technology chamber 3 pass through multiple spot
Inlet seal flange 8 is connected with adapter cavity 5 and rewinding cooling chamber 4 respectively.
The multiple spot inlet seal flange 8 can be diversified forms, in order to simplify structure, reduce manufacturing cost, while just
In installation, a kind of preferred embodiment therein is：As shown in figure 3, the multiple spot inlet seal flange 8 includes outward flange 82, interior method
Orchid 83 and O-ring seal 84, the inner flange 83 have boss end, and the outward flange 82 is provided with what is matched with inner flange 83
Groove, the O-ring seal 84 are arranged in groove, in the groove of the boss end insertion outward flange 82 of the inner flange 83, and are pushed up
Close sealing rubber ring 84, the venting channels 81 of the connection inner ring of inner flange 83 are provided with the inner flange 83.
The uniform flow heat-proof device 9 can use the uniform flow thermal insulation board of monolithic, in order to improve effect of heat insulation and cause gas
It is uniformly distributed in high-temperature technology intracavitary, it is preferred that as shown in Fig. 2 the uniform flow heat-proof device 9 includes at least two layers of thermal insulation board 91
And support column 92, the support column 92 are arranged between adjacent two layers thermal insulation board 91；Center is provided with the thermal insulation board 91
Through hole 93 and equally distributed air-vent, the air-vent on the adjacent two layers thermal insulation board 91 are dislocatedly distributed.It is specifically, heat-insulated
Plate can be the unlike materials such as quartz, ceramics, molybdenum, stainless steel, copper, preferred quartzy thermal insulation board in the utility model.
By the way that uniform flow heat-proof device 9 is arranged into said structure, penetrated so as to effectively obstruct part heat to vacuum sealing
The influence of cushion rubber；On the other hand, process gas can also be dispersed in inside process cavity, reaches graphene growth substrate table
Face is in a uniform environment, reaches the purpose that graphene sample is uniformly prepared.Further, on the thermal insulation board 91
Central through hole 93 be groove radially.
The blowing cooling chamber 1 and rewinding cooling chamber 4 are required for carrying out vacuumize process, the blowing cooling chamber 1 and receipts
Material cooling chamber 4 can be used in conjunction with a vavuum pump 7 and be vacuumized, and set and be not easy to the He of blowing cooling chamber 1 using this kind
The independent control of pressure in rewinding cooling chamber 4, for the ease of the independent control of pressure in blowing cooling chamber 1 and rewinding cooling chamber 4,
Preferably, the blowing cooling chamber 1 is provided with a vavuum pump 7, and the rewinding cooling chamber 4 is provided with a vavuum pump 7.
The heater 10 can use various ways, ratio resistance heating, infrared heating, electromagnetic field heating etc., in order to just
It is controlled in the heating-up temperature to the heater 10, preferably the heater 10 uses resistance heating to the utility model
Device.
Embodiment
As shown in Figure 1, 2, 3, the continuous growth apparatus of graphene that the high-temperature technology chamber is vertically arranged, including blowing cooling
Chamber 1, rewinding cooling chamber 4；Graphene growth substrate emptying roller 11 is provided with the blowing cooling chamber 1 and blowing cooling zone is oriented to
Roller 12, it is provided with graphene-based bottom material receiving roller 41 and rewinding cooling chamber guide roller 42 in the rewinding cooling chamber 4；It is described
Blowing cooling chamber 1 is provided with a vavuum pump 7, and the rewinding cooling chamber 4 is provided with a vavuum pump 7.
The continuous growth apparatus of graphene that the high-temperature technology chamber is vertically arranged, in addition to the first high-temperature technology chamber 2, second
High-temperature technology chamber 3 and adapter cavity 5；The both ends of the first high-temperature technology chamber 2 and the both ends of the second high-temperature technology chamber 3 are respectively provided with
There is uniform flow heat-proof device 9；Heater 10 is provided with the first high-temperature technology chamber 2 and the second high-temperature technology chamber 3；It is described to add
Hot device 10 uses resistance heater.
Described one end of first high-temperature technology chamber 2 is connected and connected with blowing cooling chamber 1 by multiple spot inlet seal flange 8,
The other end is connected and connected with adapter cavity 5 by multiple spot inlet seal flange 8, and described one end of second high-temperature technology chamber 3 passes through more
Point inlet seal flange 8 is connected and connected with adapter cavity 5, and the other end is connected by multiple spot inlet seal flange 8 with rewinding cooling chamber 4
Connect and connect；Blowing graphene growth substrate 6 passes through blowing cooling zone guide roller successively on graphene growth substrate emptying roller 11
12nd, finally graphene is arrived in retracting for the first high-temperature technology chamber 2, adapter cavity 5, the second high-temperature technology chamber 3, rewinding cooling chamber guide roller 42
On substrate material receiving roller 41.
As shown in figure 1, the first high-temperature technology chamber 2 is vertically arranged with the second high-temperature technology chamber 3；The adapter cavity 5
Position corresponding to interior first high-temperature technology chamber 2 and the second high-temperature technology chamber 3 is provided with transition roller 52.By by two high temperature
Process cavity is vertically arranged, and can reduce influence of the Action of Gravity Field to graphene film product quality.
The multiple spot inlet seal flange 8 includes outward flange 82, inner flange 83 and O-ring seal 84, the inner flange 83
With boss end, the outward flange 82 is provided with the groove matched with inner flange 83, and the O-ring seal 84 is arranged in groove,
The boss end of the inner flange 83 is inserted in the groove of outward flange 82, and top tight sealing cushion rubber 84, is set on the inner flange 83
There are the venting channels 81 of the connection inner ring of inner flange 83.The rewinding cooling chamber guide roller 42 uses water cooling guide roller.
The uniform flow heat-proof device 9 is arranged on including at least two layers of thermal insulation board 91 and support column 92, the support column 92
Between adjacent two layers thermal insulation board 91；Central through hole 93 and equally distributed air-vent are provided with the thermal insulation board 91, it is described
Air-vent on adjacent two layers thermal insulation board 91 is dislocatedly distributed.Central through hole 93 on the thermal insulation board 91 is groove radially.
Claims (9)
1. the continuous growth apparatus of graphene that high-temperature technology chamber is vertically arranged, including blowing cooling chamber (1), rewinding cooling chamber (4)
And the vavuum pump (7) vacuumized for the blowing cooling chamber (1) and rewinding cooling chamber (4)；In the blowing cooling chamber (1)
Graphene growth substrate emptying roller (11) and blowing cooling zone guide roller (12) are provided with, is set in the rewinding cooling chamber (4)
There are graphene-based bottom material receiving roller (41) and rewinding cooling chamber guide roller (42)；
It is characterized in that：Also include the first high-temperature technology chamber (2), the second high-temperature technology chamber (3) and adapter cavity (5)；Described
The both ends of one high-temperature technology chamber (2) and the both ends of the second high-temperature technology chamber (3) are provided with uniform flow heat-proof device (9)；Described
Heater (10) is provided with one high-temperature technology chamber (2) and the second high-temperature technology chamber (3)；
The first high-temperature technology chamber (2) is vertically arranged with the second high-temperature technology chamber (3)；The first high-temperature technology chamber (2)
One end is connected and connected with blowing cooling chamber (1), and the other end is connected and connected with adapter cavity (5), the second high-temperature technology chamber
(3) one end is connected and connected with adapter cavity (5), and the other end is connected and connected with rewinding cooling chamber (4)；In the adapter cavity (5)
Position corresponding to first high-temperature technology chamber (2) and the second high-temperature technology chamber (3) is provided with transition roller (52)；
Blowing graphene growth substrate (6) passes through blowing cooling zone guide roller successively on graphene growth substrate emptying roller (11)
(12), the transition roller (52) in the first high-temperature technology chamber (2), adapter cavity (5), the second high-temperature technology chamber (3), rewinding cooling chamber are led
To roller (42), finally retracting is arrived on graphene-based bottom material receiving roller (41).
2. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 1 is vertically arranged, it is characterised in that：It is described
The tension detecting apparatus (51) of detection graphene growth substrate (6) tension force is provided with adapter cavity (5).
3. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 1 is vertically arranged, it is characterised in that：It is described
Rewinding cooling chamber guide roller (42) uses water cooling guide roller.
4. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 1 is vertically arranged, it is characterised in that：First
The both ends of high-temperature technology chamber (2) are connected with blowing cooling chamber (1) and adapter cavity (5) respectively by multiple spot inlet seal flange (8)
Connect, the both ends of the second high-temperature technology chamber (3) are cooled down with adapter cavity (5) and rewinding respectively by multiple spot inlet seal flange (8)
Chamber (4) connects.
5. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 4 is vertically arranged, it is characterised in that：It is described
Multiple spot inlet seal flange (8) includes outward flange (82), inner flange (83) and O-ring seal (84), inner flange (83) tool
There is boss end, the outward flange (82) is provided with the groove matched with inner flange (83), and the O-ring seal (84) is arranged on recessed
In groove, in the groove of the boss end insertion outward flange (82) of the inner flange (83), and top tight sealing cushion rubber (84), the interior method
The venting channels (81) of connection inner flange (83) inner ring are provided with blue (83).
6. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 1 is vertically arranged, it is characterised in that：It is described
Uniform flow heat-proof device (9) is arranged on adjacent including at least two layers of thermal insulation board (91) and support column (92), the support column (92)
Between two layers of thermal insulation board (91)；Central through hole (93) and equally distributed air-vent, institute are provided with the thermal insulation board (91)
The air-vent stated on adjacent two layers thermal insulation board (91) is dislocatedly distributed.
7. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 6 is vertically arranged, it is characterised in that：It is described
Central through hole (93) on thermal insulation board (91) is groove radially.
8. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 1 is vertically arranged, it is characterised in that：It is described
Blowing cooling chamber (1) is provided with a vavuum pump (7), and the rewinding cooling chamber (4) is provided with a vavuum pump (7).
9. the continuous growth apparatus of graphene that high-temperature technology chamber as claimed in claim 1 is vertically arranged, it is characterised in that：It is described
Heater (10) uses resistance heater.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702483A (en) * | 2017-03-27 | 2017-05-24 | 重庆墨希科技有限公司 | Continuous graphene growth equipment with vertically arranged high-temperature process cavity |
| CN109680259A (en) * | 2019-02-18 | 2019-04-26 | 合肥百思新材料研究院有限公司 | A kind of roll-to-roll graphene film growth apparatus of vertical continuous P E enhancing |
| CN115465858A (en) * | 2022-10-12 | 2022-12-13 | 重庆石墨烯研究院有限公司 | Roll-to-roll graphene film production equipment and method |
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2017
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702483A (en) * | 2017-03-27 | 2017-05-24 | 重庆墨希科技有限公司 | Continuous graphene growth equipment with vertically arranged high-temperature process cavity |
| CN106702483B (en) * | 2017-03-27 | 2020-01-03 | 重庆墨希科技有限公司 | Graphene continuous growth equipment with vertically arranged high-temperature process cavity |
| CN109680259A (en) * | 2019-02-18 | 2019-04-26 | 合肥百思新材料研究院有限公司 | A kind of roll-to-roll graphene film growth apparatus of vertical continuous P E enhancing |
| CN109680259B (en) * | 2019-02-18 | 2023-11-03 | 安徽贝意克设备技术有限公司 | Vertical continuous PE reinforcing roll-to-roll graphene film growth equipment |
| CN115465858A (en) * | 2022-10-12 | 2022-12-13 | 重庆石墨烯研究院有限公司 | Roll-to-roll graphene film production equipment and method |
| CN115465858B (en) * | 2022-10-12 | 2023-12-12 | 重庆石墨烯研究院有限公司 | Roll-to-roll graphene film production equipment and method |
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