CN111705304A - A kind of continuous uniform coating hot wire chemical vapor deposition equipment and method - Google Patents
A kind of continuous uniform coating hot wire chemical vapor deposition equipment and method Download PDFInfo
- Publication number
- CN111705304A CN111705304A CN202010655206.3A CN202010655206A CN111705304A CN 111705304 A CN111705304 A CN 111705304A CN 202010655206 A CN202010655206 A CN 202010655206A CN 111705304 A CN111705304 A CN 111705304A
- Authority
- CN
- China
- Prior art keywords
- sample
- sample feeding
- coating
- chamber
- hot wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 73
- 239000011248 coating agent Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004050 hot filament vapor deposition Methods 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 82
- 238000001816 cooling Methods 0.000 claims abstract description 65
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 238000004321 preservation Methods 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims description 7
- 238000003763 carbonization Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims 2
- 238000009501 film coating Methods 0.000 claims 2
- 238000004804 winding Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010865 sewage Substances 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- 239000011825 aerospace material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000010842 industrial wastewater Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本发明属于化学气相沉积技术领域,涉及一种热丝化学气相沉积设备及方法。一种连续均匀镀膜热丝化学气相沉积设备,包括:镀膜腔室、送样保温腔室、送样装置,所述镀膜腔室与送样保温腔室之间通过插板阀连接,所述镀膜腔室中设有热丝加热系统;所述热丝加热系统的下方设有水冷系统;所述送样保温腔室设置在所述镀膜腔室的两侧;所述的送样装置通过送样保温腔室向镀膜腔室送入样品,两侧交替进行,连续镀膜。本发明的设备和方法,能够精确控制热丝加热单元和水冷单元,实现温场均匀,从而实现制备薄膜的均匀性,优化电流和水流量,节约能源;能够实现镀膜后样品自动保温和温和均匀降温,降低薄膜应力,提高产品质量和使用寿命。
The invention belongs to the technical field of chemical vapor deposition, and relates to a hot wire chemical vapor deposition device and method. A continuous and uniform coating hot wire chemical vapor deposition equipment, comprising: a coating chamber, a sample feeding and heat preservation chamber, and a sample feeding device, the coating chamber and the sample feeding and heat preservation chamber are connected by a plug valve, and the coating film A hot wire heating system is arranged in the chamber; a water cooling system is arranged below the hot wire heating system; the sample feeding and heat preservation chambers are arranged on both sides of the coating chamber; the sample feeding device passes the sample feeding The sample is fed into the coating chamber from the holding chamber, and the two sides are alternately coated for continuous coating. The device and method of the present invention can precisely control the heating wire heating unit and the water cooling unit, and realize uniform temperature field, thereby realizing the uniformity of the prepared film, optimizing the current and water flow, and saving energy. Cooling, reducing film stress, improving product quality and service life.
Description
技术领域technical field
本发明属于化学气相沉积技术领域,涉及一种热丝化学气相沉积设备及方法。The invention belongs to the technical field of chemical vapor deposition, and relates to a hot wire chemical vapor deposition device and method.
背景技术Background technique
目前硼掺杂金刚石薄膜污水处理电极,金刚石涂层刀具等成为工业应用领域的新产品,金刚石薄膜污水处理电极可降解工业废水,难处理有机废水等,在环境保护领域有较大的应用前景。金刚石涂层刀具在航空领域材料加工,微电子器件加工等也有广泛的应用。热丝化学气相沉积方法可以大面积制备金刚石薄膜,然而每次制备需要更换热丝,制备效率低,材料成本和时间成本高昂;另外热丝温场不均匀导致薄膜质量均匀性差;没有相应的降温工艺导致薄膜应力过高,稳定性差,严重阻碍着其应用。为了提高薄膜的制备效率,以及提高薄质量,需要研发新的真空设备以及工艺。At present, boron-doped diamond film sewage treatment electrodes and diamond-coated tools have become new products in the field of industrial applications. Diamond film sewage treatment electrodes can degrade industrial wastewater and refractory organic wastewater, and have great application prospects in the field of environmental protection. Diamond-coated tools are also widely used in aerospace material processing, microelectronic device processing, etc. The hot filament chemical vapor deposition method can prepare a large area of diamond thin film, but the hot filament needs to be replaced each time, the preparation efficiency is low, and the material cost and time cost are high; in addition, the uneven temperature field of the hot filament leads to poor uniformity of film quality; there is no corresponding The cooling process leads to excessively high stress and poor stability of the film, which seriously hinders its application. In order to improve the production efficiency of thin films and improve the quality of thin films, new vacuum equipment and processes need to be developed.
发明内容SUMMARY OF THE INVENTION
本发明的目的是解决现有的沉积设备在温度控制方面存在的缺陷,提供一种连续均匀镀膜热丝化学气相沉积设备及方法,通过对热丝在二维方向上的温度调整控制,实现热丝温场的均匀化,提高薄膜质量。The purpose of the present invention is to solve the defects existing in the existing deposition equipment in terms of temperature control, and to provide a continuous and uniform coating hot wire chemical vapor deposition equipment and method. The uniformity of the wire temperature field improves the film quality.
本发明解决其技术问题采用的第一个技术方案是:一种连续均匀镀膜热丝化学气相沉积设备,包括:镀膜腔室、送样保温腔室、送样装置,所述镀膜腔室与送样保温腔室之间通过插板阀连接,所述镀膜腔室中设有热丝加热系统;所述热丝加热系统的下方设有水冷系统;所述送样保温腔室对称设置在所述镀膜腔室的两侧;所述送样装置通过送样保温腔室向镀膜腔室送入样品,两侧交替进行,连续镀膜。The first technical solution adopted by the present invention to solve the technical problem is: a continuous and uniform coating hot wire chemical vapor deposition equipment, comprising: a coating chamber, a sample feeding and heat preservation chamber, and a sample feeding device, the coating chamber and the feeding The sample insulation chambers are connected by a plug-in valve, a hot wire heating system is arranged in the coating chamber; a water cooling system is arranged below the hot wire heating system; the sample feeding and insulation chambers are symmetrically arranged on the The two sides of the coating chamber; the sample feeding device feeds the sample to the coating chamber through the sample feeding and heat preservation chamber, and the two sides are alternately performed for continuous coating.
作为本发明的一种优选方式,所述的热丝加热系统由多个热丝单元组成,每个热丝单元包括一根热丝,所述热丝连接独立电源。As a preferred mode of the present invention, the hot wire heating system is composed of a plurality of hot wire units, each hot wire unit includes a hot wire, and the hot wire is connected to an independent power supply.
进一步优选地,所述的热丝单元均匀排布在热丝架上,所述热丝架上设有若干导电环,每组导电环分别连接独立电源的正负极;所述热丝的两端绕过正负极的导电环,通过弹簧拉紧。Further preferably, the heating wire units are evenly arranged on the heating wire frame, and the heating wire frame is provided with a number of conductive rings, and each group of conductive rings is respectively connected to the positive and negative electrodes of an independent power supply; The ends bypass the conductive rings of the positive and negative poles, and are tensioned by a spring.
作为本发明的一种优选方式,所述的水冷系统包括水冷盘,所述水冷盘由若干平行设置的水冷单元组成;所述水冷单元的水流方向与所述热丝的电流方向垂直。As a preferred mode of the present invention, the water cooling system includes a water cooling plate, and the water cooling plate is composed of several parallel water cooling units; the water flow direction of the water cooling units is perpendicular to the current direction of the heating wire.
进一步优选地,所述水冷单元上设有流量截止阀,通过所述的流量截止阀控制所述水冷单元内水流量。Further preferably, the water-cooling unit is provided with a flow cut-off valve, and the water flow in the water-cooling unit is controlled by the flow cut-off valve.
进一步优选地,所述的水冷盘的下方设有升降机构,所述升降机构带动所述的水冷盘上下移动。Further preferably, a lifting mechanism is provided below the water cooling plate, and the lifting mechanism drives the water cooling plate to move up and down.
作为本发明的一种优选方式,所述的送样装置包括样品盘,所述样品盘由盘体和电阻丝组成,所述电阻丝迂回排布在所述盘体内;所述电阻丝的两端分别连接正、负极导线;所述电阻丝的排布间距从中间向两侧逐渐密集。As a preferred mode of the present invention, the sample feeding device includes a sample tray, the sample tray is composed of a tray body and a resistance wire, and the resistance wire is circuitously arranged in the tray body; two parts of the resistance wire The ends are respectively connected to the positive and negative wires; the arrangement spacing of the resistance wires is gradually denser from the middle to the two sides.
进一步优选地,所述的送样装置还包括送样杆,所述送样杆的一端与所述样品盘插接连接;送样杆与所述样品盘的接头端设有正、负连接电极。Further preferably, the sample feeding device further comprises a sample feeding rod, and one end of the sample feeding rod is connected to the sample tray; the joint end of the sample feeding rod and the sample tray is provided with positive and negative connection electrodes. .
进一步优选地,所述的送样装置还包括设置在所述送样保温腔室和所述镀膜腔室内的传送架,所述传送架上设有滑动装置,所述样品盘在所述送样杆的推拉下借助所述滑动装置进出镀膜腔室。Further preferably, the sample feeding device further comprises a transfer rack arranged in the sample feeding holding chamber and the coating chamber, the transfer rack is provided with a sliding device, and the sample tray is in the sample feeding chamber. The push and pull of the rod enters and leaves the coating chamber by means of the sliding device.
本发明进一步提供了一种连续均匀镀膜热丝化学气相沉积方法,包括:The present invention further provides a continuous uniform coating hot wire chemical vapor deposition method, comprising:
(1)关闭镀膜腔室两侧的插板阀,接通电源,等待热丝碳化;(1) Close the flapper valves on both sides of the coating chamber, turn on the power, and wait for the carbonization of the hot wire;
(2)调节每个热丝加热单元的电流大小,使电流由中间单元向两侧单元均匀递增;(2) Adjust the current of each hot wire heating unit, so that the current increases uniformly from the middle unit to the two units;
(3)打开一侧插板阀,将待镀膜样品放在样品盘上;(3) Open the plug valve on one side and place the sample to be coated on the sample tray;
(4)使用送样杆将样品盘推至水冷盘中间位置,抽出送样杆,关闭插板阀;(4) Use the sample delivery rod to push the sample tray to the middle of the water cooling tray, pull out the sample delivery rod, and close the plug valve;
(5)水冷盘升高至距离热丝下方10mm处,调节每个水冷单元的截止阀,使得水冷盘中间处的水流速向两侧递减,调整工艺参数,开始沉积镀膜;(5) The water-cooling plate is raised to a distance of 10mm below the hot wire, and the shut-off valve of each water-cooling unit is adjusted so that the water flow rate in the middle of the water-cooling plate decreases to both sides, and the process parameters are adjusted to start depositing the coating;
(6)镀膜后期,水冷盘下降,打开该侧插板阀,送样杆与送样盘连接,同时样品盘接通电源加热,将样品盘拉出至送样保温腔室内静置降温;(6) In the later stage of coating, the water-cooling plate is lowered, the side plate valve is opened, the sample feeding rod is connected to the sample feeding tray, and the sample tray is powered on for heating.
(7)打开另一侧插板阀,通过另一侧的送样保温腔室将待镀膜样品送入镀膜腔室,重复步骤(4)-(6)进行另一个样品的镀膜;(7) Open the plug valve on the other side, send the sample to be coated into the coating chamber through the sample feeding and holding chamber on the other side, and repeat steps (4)-(6) to coat another sample;
(8)将降温后的镀膜样品取出,放置新的待镀膜样品,依次循环,两侧的送样保温腔室交替进行,连续镀膜。(8) Take out the cooled coating sample, place a new sample to be coated, circulate in sequence, and alternate the sample feeding and holding chambers on both sides to continuously coat.
本发明与现有技术相比,具有的有益效果是:Compared with the prior art, the present invention has the following beneficial effects:
实现一次拉丝,多次、大面积、连续镀膜,降低镀膜成本;Achieve one-time drawing, multiple, large-area, continuous coating, reducing coating costs;
精确控制热丝加热单元和水冷单元,实现温场均匀,从而实现制备薄膜的均匀性,优化电流和水流量,节约能源;Precisely control the hot wire heating unit and water cooling unit to achieve uniform temperature field, so as to achieve uniformity of the prepared film, optimize current and water flow, and save energy;
增加可控温样品盘,实现自动保温和降温,降低薄膜应力,提高产品质量和使用寿命;Add a temperature-controlled sample tray to achieve automatic heat preservation and cooling, reduce film stress, and improve product quality and service life;
自动化控制高,实现一人控制多台设备,降低人工成本。High automation control, one person can control multiple equipments and reduce labor costs.
附图说明Description of drawings
图1是本发明实施例提供的连续均匀镀膜热丝化学气相沉积设备整体结构示意图;1 is a schematic diagram of the overall structure of a continuous uniform coating hot wire chemical vapor deposition equipment provided by an embodiment of the present invention;
图2是外部腔室示意图;Figure 2 is a schematic diagram of an external chamber;
图3是内部热丝加热系统和水冷系统结构及空间位置关系示意图;Figure 3 is a schematic diagram of the structure and spatial position relationship between the internal hot wire heating system and the water cooling system;
图4是热丝单元结构意图;Figure 4 is a schematic diagram of the structure of the hot wire unit;
图5是由若干热丝单元组成的热丝加热系统示意图;Figure 5 is a schematic diagram of a hot wire heating system composed of several hot wire units;
图6是水冷盘的结构示意图;Fig. 6 is the structural representation of water cooling plate;
图7是循环腔室内部结构示意图;7 is a schematic diagram of the internal structure of the circulation chamber;
图8是水冷盘升降机构示意图;8 is a schematic diagram of a water-cooled plate lifting mechanism;
图9是送样盘结构透视图;Figure 9 is a perspective view of the structure of the sample feeding tray;
图10是送样盘内部电阻丝排布示意图;Figure 10 is a schematic diagram of the internal resistance wire arrangement of the sample feeding tray;
图11是送样杆与送样盘连接关系示意图;Figure 11 is a schematic diagram of the connection between the sample feeding rod and the sample feeding tray;
图12是本发明实施例提供的连续均匀镀膜热丝化学气相沉积方法流程示意图。FIG. 12 is a schematic flowchart of a chemical vapor deposition method for continuous uniform coating hot wire provided by an embodiment of the present invention.
具体实施方式Detailed ways
为了便于理解本发明,下面结合附图和具体实施例,对本发明进行更详细的说明。附图中给出了本发明的较佳的实施例。但是,本发明可以以许多不同的形式来实现,并不限于本说明书所描述的实施例。相反地,提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。In order to facilitate understanding of the present invention, the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described in this specification. Rather, these embodiments are provided so that a thorough and complete understanding of the present disclosure is provided.
本发明提供的其中一个实施例是:一种连续均匀镀膜热丝化学气相沉积设备,该设备整体结构如图1和2所示,由304不锈钢为主材加工成的双层水冷外部壳体组成了整个设备的腔室,分别是左送样保温腔室2、中间的镀膜腔室4、和右送样保温腔室5。左送样保温腔室2和右送样保温腔室5分别通过插板阀3与中间的镀膜腔室4分隔。One of the embodiments provided by the present invention is: a continuous uniform coating hot wire chemical vapor deposition equipment, the overall structure of the equipment is shown in Figures 1 and 2, and is composed of a double-layer water-cooled outer shell processed from 304 stainless steel The chambers of the entire equipment are respectively the left sample feeding and
如图1和3所示,在镀膜腔室4中,设有前后走向的热丝加热系统和左右走向的水冷系统,其中,水冷系统置于热丝加热系统的下方,二者之间在空间上相隔一段距离,并且呈垂直关系。As shown in Figures 1 and 3, in the
如图3和4所示,热丝加热系统由若干热丝单元6平行排布在热丝架11上组成。热丝架11由四根垂直的铜棒17支撑,两根铜棒之间安装陶瓷横梁14。铜棒17为中空棒体,内部有水流通过,在镀膜过程中为高温的陶瓷横梁14冷却降温。As shown in FIGS. 3 and 4 , the hot wire heating system consists of several
如图4所示,每一个热丝单元包括一根热丝8,两个耐高温导电钼环:负极钼环12和正极钼环13。多个钼环串联在陶瓷横梁14上,相邻钼环之间间隔一定距离。热丝8采用直径0.5~0.8mm的钽丝。热丝8的两端分别绕过正极钼环13和负极钼环12,被固定在绝缘陶瓷18上的耐高温弹簧16拉紧。负极钼环12和正极钼环13分别通过耐高温导线15连接一个独立电源的正、负极。As shown in FIG. 4 , each heating wire unit includes a
如图4和5所示,与传统热丝并联由同一个电源供电不同,本实施例的整个热丝加热系统中,每一个热丝单元均连接一个独立的电源,该独立电源为单根热丝单独供电,实现单根热丝电流的精确控制,进而实现温度的精确控制。As shown in Figures 4 and 5, different from the traditional heating wire that is powered by the same power supply in parallel, in the entire heating wire heating system of this embodiment, each heating wire unit is connected to an independent power supply, and the independent power supply is a single heating wire. The wire is powered separately to achieve precise control of the current of a single hot wire, and then to achieve precise temperature control.
传统热丝通电时,每根热丝电流大小一致,产热量一致,造成整个热丝温场会出现中间温度高,两侧温度低的现象,导致薄膜生长厚度质量不均匀。本实施例中,热丝单元结构实现单根热丝的电流控制,将两侧向中间热丝电流呈梯度递减,实现两侧热丝产热量高于中间热丝产热量,缓解热丝水平方向的温场差异。When the traditional hot wire is energized, the current of each hot wire is the same, and the heat generation is the same, resulting in the phenomenon of high temperature in the middle and low temperature on both sides of the entire hot wire temperature field, resulting in uneven film growth thickness and quality. In this embodiment, the heating wire unit structure realizes the current control of a single heating wire, and the current from both sides to the middle heating wire is gradually decreased, so that the heat production of the heating wire on both sides is higher than that of the middle heating wire, and the horizontal direction of the heating wire is relieved. temperature field difference.
如图6所示,水冷系统由水冷盘9、循环腔室20和进出水管21组成。其中,水冷盘9由若干水冷单元19并排组成,水冷单元19使用紫铜加工的非标管件。水冷单元19的两端与循环腔室20的两端连接,每个水冷单元的入口端均安装一个流量截止阀22,每个管内的水流可以通过流量截止阀22控制。As shown in FIG. 6 , the water cooling system consists of a water cooling plate 9 , a
循环腔室20的内部结构如图7所示,内部设有隔板23,隔板将循环腔室20分为左侧的进水室和右侧的出水室,其中,进水室与水冷单元19的入口端连接,出水室与水冷单元的出口端连接。循环腔室20底部连接进出水管21,进出水管21为套管结构,内管为出水管,外管为进水管。进水管与进水室连通。隔板23与出水管连接,通过隔板上开设的回流孔24,出水室与出水管连通。进出水管21外部的进水管走冷水,内部的出水管走回流的热水。进出水管21的下端设有进、出水口。The internal structure of the
如图8所示,进出水管21上安装真空盘25。真空盘25的作用是在镀膜过程中,用来封闭镀膜腔室4底部,使镀膜腔室形成密闭空间。As shown in FIG. 8 , a
在进出水管21的底部设有液压顶杆26,在液压顶杆26的作用下,整个水冷盘9能够实现升降运动。A
在水冷盘9升降过程中,为了保持真空盘25与镀膜腔室4底部之间的密封状态,真空盘25与循环腔室20底部通过波纹伸缩管27连接,使得水冷盘9升降过程中,真空盘25的位置始终保持不动,从而将镀膜腔室4底部密封起来。During the lifting and lowering process of the water-cooled plate 9, in order to maintain the sealing state between the
本实施例中,水冷盘9中的水冷单元与热丝加热系统中的热丝单元6在空间上实现垂直放置,即热丝单元中的电流方向和水冷单元水流方向空间垂直。热丝温场的的不均匀性分为两个方向:与热丝垂直方向和热丝平行方向。热丝垂直方向可以通过调整热丝单元电流差异来控制,而与热丝平行方向温差仍然存在,原因在于同一根热丝每个位点产生的热量基本一致,但是由于样品台中间受到的热辐射多于两端。水冷盘的水冷单元可以控制每个管内通过的水流量,使两端单元水流量到中间呈现递增趋势,那么中间水冷单元带走的热量高于两侧,实现热丝平行方向温场差异的缓解。In this embodiment, the water cooling unit in the water cooling plate 9 and the
本实施例中,热丝单元电流的单独控制以及水冷单元水流的单独控制,及二者空间垂直布局方式在解决热丝温场不均性分布的技术问题中起到决定性的作用。In this embodiment, the independent control of the current of the hot wire unit and the independent control of the water flow of the water cooling unit, as well as the vertical layout of the two, play a decisive role in solving the technical problem of the uneven distribution of the hot wire temperature field.
镀膜腔室4中的水冷盘9在液压顶杆26的作用下实现可升降功能。一般镀膜时,热丝与样品盘距离约为8mm~10mm,热丝温度2400~2600℃,样品盘辐射温度高达800~1000℃,如果在这种条件下进行样品的传送,由于传送部件高温变形,所以很难实现,另外高温下的热丝需要周围环境非常稳定,传送带来的扰动可能会引起热丝的断裂。因此样品镀完膜之后,通过液压顶杆26缓慢下降到一个合理的位置,实现合适温度传送样品,同时对热丝也没有扰动。The water cooling plate 9 in the
如图1和2所示,在本实施例中,左送样保温腔室2和右送样保温腔室5中分别设有样品盘1和送样杆7,并且,在送样保温腔室和镀膜腔室内设有传送架10,如图3所示。传送架10采用耐高温陶瓷,高温条件下不变形。传送架10上安装有滑轮。将样品盘1置于传送架10上,在送样杆7的推拉作用下,通过滑轮的滚动实现样品在镀膜腔室4和两侧送样保温腔室的传送。As shown in Figures 1 and 2, in this embodiment, a
如图9所示,送样盘1由陶瓷盘体33和其内部的加热丝28组成。其中加热丝28为可加热电阻丝,迂回排布在陶瓷盘体33内部,并且从中间到两侧,加热丝的间距逐渐变小,排布逐渐密集,如图10所示。采用此种排布方式的目的是为了在降温过程中大面积样品可以均匀降温。As shown in FIG. 9 , the
如图9和图11所示,加热丝28的两端分别与正极导线29和负极导线30连接。送样杆7与送样盘1通过插接的方式连接,在送样杆7的接头处,设有正极31和负极32。当送样杆7与送样盘1插接在一起后,正极31和负极32分别与负极导线30、正极导线29连接,通过正极31和负极32接通电源,能够对加热丝28通电加热,对放置在陶瓷盘体33上的镀膜样品进行加热保温。As shown in FIGS. 9 and 11 , both ends of the
基于上述实施例中提供的设备,本发明还提供了另一个实施例:一种连续均匀镀膜热丝化学气相沉积方法,该方法的工艺流程如图12所示,具体步骤为:Based on the equipment provided in the above embodiment, the present invention also provides another embodiment: a continuous uniform coating hot wire chemical vapor deposition method, the process flow of the method is shown in Figure 12, and the specific steps are:
1、中间的镀膜腔室与两侧送样保温腔室通过插板阀隔开,接通热丝加热系统的电源,如图12中(1)所示;1. The coating chamber in the middle is separated from the sample feeding and insulation chambers on both sides by the flapper valve, and the power supply of the hot wire heating system is turned on, as shown in (1) in Figure 12;
2、等待热丝碳化完毕后,调节每根热丝单元的电流大小,由中间向两侧递增;2. After the carbonization of the hot wire is completed, adjust the current of each hot wire unit, increasing from the middle to both sides;
3、打开右侧插板阀,将待镀膜样品放置在样品盘上,将右侧样品盘使用送样杆推至水冷盘中间位置,抽出送样杆,关闭右侧插板阀;3. Open the right plug valve, place the sample to be coated on the sample tray, push the right sample tray to the middle of the water cooling tray with the sample feed rod, pull out the sample feed rod, and close the right plug valve;
4、启动压夜顶杆,使水冷盘升高至距离热丝10mm处,调节每个水冷单元的流量截止阀,使得中间水流流速大于两侧,调整工艺参数,开始沉积镀膜,如图12中(2)所示;4. Start the night pressing rod to raise the water cooling plate to a distance of 10mm from the hot wire, adjust the flow shut-off valve of each water cooling unit so that the flow rate of the middle water flow is greater than that of both sides, adjust the process parameters, and start to deposit the coating, as shown in Figure 12 ( 2) shown;
5、待镀膜后期,启动压夜顶杆,使水冷盘下降至一定位置,打开右侧插板阀,送样杆与送样盘连接,并且样品盘接通电源进行加热,即在样品转移过程中,通过样品盘对镀膜后的样品进行加热保温,使其保持恒温或者稳定波动不大的状态,如图12中(3);5. In the later stage of coating, start the pressure night ejector to lower the water cooling plate to a certain position, open the right plug valve, connect the sample feeding rod to the sample feeding tray, and turn on the power supply to heat the sample tray, that is, during the sample transfer process , the coated sample is heated and kept warm by the sample pan to keep it at a constant temperature or a stable state with little fluctuation, as shown in (3) in Figure 12;
6、关闭右侧的插板阀,逐步调小样品盘的电流,随着样品盘温度逐渐降低,样品以一定的梯度均匀降温,降低薄膜应力状态,如图12中(4);6. Close the plug-in valve on the right, and gradually reduce the current of the sample plate. As the temperature of the sample plate gradually decreases, the sample cools down uniformly with a certain gradient to reduce the stress state of the film, as shown in (4) in Figure 12;
7、将左侧送样保温腔室的样品推送至冷却盘,如图12中(5)所示,与此同时,将右侧送样保温腔室内完成降温的样品取出,放置新的无镀膜样品;7. Push the sample from the left sample feeding holding chamber to the cooling tray, as shown in (5) in Figure 12. At the same time, take out the cooled sample from the right sample feeding holding chamber and place a new one without coating. sample;
8、重复步骤3-6,完成左侧送样保温腔室内样品的镀膜及均匀降温,如图12中(6)所示;8. Repeat steps 3-6 to complete the coating and uniform cooling of the sample in the left-hand sample feeding and holding chamber, as shown in (6) in Figure 12;
9、重新打开右侧插板阀,重复步骤3-6,依次循环,左右交替进行。9. Re-open the right side flap valve, repeat steps 3-6, cycle in turn, and alternate left and right.
在上述方法中,镀膜腔室热丝一直处于加热状态,并且不与大气相通。左右送样保温腔室,起到循环送样和保温的作用,实现连续镀膜。In the above method, the heating wire of the coating chamber is always in a heated state and is not open to the atmosphere. The left and right sample feeding and heat preservation chambers play the role of circulating sample feeding and heat preservation to realize continuous coating.
本发明结合工艺经验,发现在薄膜制备后期降温,除了缓慢进行冷却外,还需要有一个较低的恒温阶段来释放应力,因此提出了本发明的设备和方法,能够实现镀膜后样品自动保温和温和均匀降温,降低薄膜应力,提高产品质量和使用寿命。Combined with process experience, the present invention finds that in the later stage of film preparation, in addition to slow cooling, a lower constant temperature stage is also required to release stress. Therefore, the device and method of the present invention are proposed, which can realize automatic thermal insulation and thermal stability of samples after coating. Gentle and uniform cooling reduces film stress and improves product quality and service life.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010655206.3A CN111705304B (en) | 2020-07-09 | 2020-07-09 | A continuous uniform coating hot wire chemical vapor deposition device and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010655206.3A CN111705304B (en) | 2020-07-09 | 2020-07-09 | A continuous uniform coating hot wire chemical vapor deposition device and method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111705304A true CN111705304A (en) | 2020-09-25 |
CN111705304B CN111705304B (en) | 2024-11-26 |
Family
ID=72545548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010655206.3A Active CN111705304B (en) | 2020-07-09 | 2020-07-09 | A continuous uniform coating hot wire chemical vapor deposition device and method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111705304B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112553591A (en) * | 2020-12-22 | 2021-03-26 | 广东鼎泰高科技术股份有限公司 | Hot-wire chemical vapor deposition equipment and chemical vapor deposition method |
CN113061870A (en) * | 2021-04-02 | 2021-07-02 | 泸州韶光智造科技有限公司 | Continuous vacuum coating production line and method for optical thin film component |
CN114807896A (en) * | 2022-04-01 | 2022-07-29 | 廊坊沃尔德超硬刀具有限公司 | Equipment for continuously producing hot wire CVD diamond product and use method thereof |
CN116623154A (en) * | 2023-05-23 | 2023-08-22 | 东莞嘉拓日晟智能科技有限公司 | Novel tubular PECVD (plasma enhanced chemical vapor deposition) equipment and coating process thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103687978A (en) * | 2011-04-20 | 2014-03-26 | 于利奇研究中心有限公司 | Hot wire method for depositing semiconductor material on a substrate and device for carrying out the method |
CN207331047U (en) * | 2017-05-19 | 2018-05-08 | 上海金科纳米涂层技术有限公司 | Tool surface continuous coating apparatus |
CN110273137A (en) * | 2018-03-16 | 2019-09-24 | 深圳先进技术研究院 | Hot wire fixing device and diamond film growth equipment |
CN110331378A (en) * | 2019-07-18 | 2019-10-15 | 中国科学院金属研究所 | Diamond thin continuously prepares the HFCVD equipment used and its film plating process |
CN212293737U (en) * | 2020-07-09 | 2021-01-05 | 山东省科学院海洋仪器仪表研究所 | A continuous uniform coating hot wire chemical vapor deposition equipment |
-
2020
- 2020-07-09 CN CN202010655206.3A patent/CN111705304B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103687978A (en) * | 2011-04-20 | 2014-03-26 | 于利奇研究中心有限公司 | Hot wire method for depositing semiconductor material on a substrate and device for carrying out the method |
US20140235036A1 (en) * | 2011-04-20 | 2014-08-21 | Forschungszentrum Juelich Gmbh | Hot-wire method for depositing semiconductor material on a substrate and device for performing the method |
CN207331047U (en) * | 2017-05-19 | 2018-05-08 | 上海金科纳米涂层技术有限公司 | Tool surface continuous coating apparatus |
CN110273137A (en) * | 2018-03-16 | 2019-09-24 | 深圳先进技术研究院 | Hot wire fixing device and diamond film growth equipment |
CN110331378A (en) * | 2019-07-18 | 2019-10-15 | 中国科学院金属研究所 | Diamond thin continuously prepares the HFCVD equipment used and its film plating process |
CN212293737U (en) * | 2020-07-09 | 2021-01-05 | 山东省科学院海洋仪器仪表研究所 | A continuous uniform coating hot wire chemical vapor deposition equipment |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112553591A (en) * | 2020-12-22 | 2021-03-26 | 广东鼎泰高科技术股份有限公司 | Hot-wire chemical vapor deposition equipment and chemical vapor deposition method |
CN113061870A (en) * | 2021-04-02 | 2021-07-02 | 泸州韶光智造科技有限公司 | Continuous vacuum coating production line and method for optical thin film component |
CN114807896A (en) * | 2022-04-01 | 2022-07-29 | 廊坊沃尔德超硬刀具有限公司 | Equipment for continuously producing hot wire CVD diamond product and use method thereof |
CN116623154A (en) * | 2023-05-23 | 2023-08-22 | 东莞嘉拓日晟智能科技有限公司 | Novel tubular PECVD (plasma enhanced chemical vapor deposition) equipment and coating process thereof |
CN116623154B (en) * | 2023-05-23 | 2024-01-02 | 东莞嘉拓日晟智能科技有限公司 | Tubular PECVD equipment and coating process thereof |
Also Published As
Publication number | Publication date |
---|---|
CN111705304B (en) | 2024-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111705304A (en) | A kind of continuous uniform coating hot wire chemical vapor deposition equipment and method | |
JP5647977B2 (en) | Processing equipment for specifically processing stacked objects to be processed | |
CN104060236B (en) | A kind of continuous coating production system of sheet-form substrate | |
WO2021008057A1 (en) | Hfcvd device used for continuous preparation of diamond thin film, and coating method thereof | |
WO2020062575A1 (en) | 3d glass hot bending machine and 3d glass forming method | |
CN201740384U (en) | High-temperature vacuum baking oven | |
CN101893373B (en) | Vertical and horizontal efficient energy-saving vacuum controlled atmosphere furnace for continuous production | |
CN109020256B (en) | Improved process for evaporating glass surface film | |
CN212293737U (en) | A continuous uniform coating hot wire chemical vapor deposition equipment | |
CN212199412U (en) | A reaction device for plasma atomic layer deposition | |
CN109111091A (en) | Graphite mold, 3D glass hot bending device and 3D glass hot bending method | |
CN115537926B (en) | Large-size physical vapor phase method silicon carbide growth crucible capable of improving growth efficiency | |
CN103276373B (en) | PECVD device | |
CN104269369A (en) | Device and method for preheating wafers through vacuum loading cavity | |
CN210529053U (en) | HFCVD equipment used for continuous preparation of diamond thin films | |
CN109423631B (en) | Vapor deposition uniform heating device and vapor deposition furnace | |
CN103266301A (en) | Evaporation furnace capable of shortening distance and rapidly increasing and reducing temperature, and manufacturing method thereof | |
TW201015738A (en) | Atomic layer deposition apparatus | |
CN101830634B (en) | High-frequency electric sealing device for solar vacuum tubes and sealing method thereof | |
CN201608166U (en) | Controllable bidirectional cross circulation ventilation device | |
CN208776835U (en) | An industrial chemical vapor deposition device | |
CN209974884U (en) | Continuous growth equipment for graphene metal composite powder | |
CN207515512U (en) | A kind of energy comprehensive utilization system for kiln | |
CN219890127U (en) | Electromagnetic induction heating vacuum device | |
CN114572970B (en) | Partitioned graphene film preparation device and preparation method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |