CN106788286B - A kind of power control circuit of the saturated power amplifier based on base stage - Google Patents
A kind of power control circuit of the saturated power amplifier based on base stage Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
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Abstract
A kind of power control circuit this application discloses saturated power amplifier based on base stage, including two operational amplifiers and three transistors.Control voltage adjusts the positive input terminal that voltage passes through resistance one respectively, resistance two connects operational amplifier one, and the negative input end of operational amplifier one is connected with output end, and connects the positive input terminal of operational amplifier two.The negative input end of operational amplifier two is grounded by resistance four, and the collector of transistor three is also connected by resistance five；Base bias voltage of the output end output medium voltage of operational amplifier two as transistor one and transistor two.The collector of one emitter of transistor connection transistor three；The emitter output of transistor two is supplied to the base bias current of power transistor；The base stage of transistor three connects collector by resistance six, also connects RF signal input end by capacitor one；The emitter of transistor three is grounded.The application can improve switch spectrum of the saturated power amplifier under small output power.
Description
Technical field
This application involves a kind of saturated power amplifiers, more particularly to power control circuit therein.
Background technique
General power amplifier work is in linear zone, and gain is held essentially constant, and output power and input power are at just
Than this power amplifier is commonly known as linear power amplifier.
There is a kind of power amplifier to work in saturation state, output power is mainly by the collector bias electricity of power transistor
Pressure or base bias current determine that this power amplifier is commonly known as saturated power amplifier.Saturated power amplifier
It include power control circuit, for being supplied to the bias voltage or bias current of power transistor according to control Signal Regulation.
For example, GSM power amplifier just belongs to saturated power amplifier.
The output power of GSM power amplifier is adjusted by control voltage Vramp." the IEEE that in June, 2015 publishes
Transactions on Microwave Theory and Techniques " there is an article in the 6th phase of volume 63
《Electrothermal Effects on Performance of GaAs HBT Power Amplifier During
Power Versus Time (PVT) Variation at GSM/DCS Bands ", hereinafter referred to as document A.Figure in document A
5 disclose a kind of CMOS controller function module, that is, a kind of power control circuit of GSM power amplifier, are used to basis
Control voltage Vramp output is supplied to the collector voltage Vcc of power transistor.
Referring to Fig. 1, this is a kind of simplified signal of existing power control circuit disclosed in Fig. 5 of above-mentioned document
Figure.The input and output of the power control circuit meet Vcc=Gain × (Vramp-Voff), and wherein the gain G ain of amplifier is
Constant, comparison voltage Voff are also constant, therefore in a linear relationship between output voltage Vcc and the control voltage Vramp of input.
If the output power of power transistor is known as Pout, havePass through selection
Each component parameters in conventional power control circuit can make comparison voltage Voff value very little, it is electric can to ignore comparison at this time
Voff is pressed, then is had
If by output power represented by decibel milliwatt (dBm, decibel relative to one milliwatt)
Referred to as Pout_dBm then hasIt is passed by choosing
Each component parameters in system power control circuit, can make comparison voltage Voff value very little, can ignore comparison voltage at this time
Voff then has
Since gain G ain and load resistance Rload are constant,A is also constant, therefore represented by decibel milliwatt
Substantially at logarithmic relationship between output power Pout_dBm and control voltage Vramp.
Substantially logarithmic relationship can be used between the output power Pout_dBm that decibel milliwatt indicates and control voltage Vramp
Fig. 2 is indicated.When output power Pout very little, adjusting control voltage Vramp can make output power Pout appearance very big
Variation, it is excessive on frequency domain that this will lead to switch response.
The Chinese utility model patent that Authorization Notice No. is CN202906841U, authorized announcement date is on April 24th, 2013
In " improving the circuit of power control accuracy in a kind of radio-frequency power amplifier ", a kind of power control circuit is disclosed.It is therein
Power amplifier includes High-power amplifier and small-power power amplifier, and High-power amplifier controls output work using base bias voltage
Rate, small-power power amplifier controls output power using collector bias voltage, to improve power control accuracy and efficiency.However
The program causes output power discontinuous, brings uncertainty to using since there are the switchings of two kinds of power control modes.
The Chinese invention patent application that application publication number is CN105305990A, data of publication of application is on 2 3rd, 2016
In " a kind of power control circuit of power amplifier ", a kind of power control circuit is disclosed.The power control circuit includes
Current controlled circuit and voltage control loop, and output work is determined by different loops in the different operating stage of power amplifier
Rate, to obtain area, cost and stablize time-related advantage.However in the program current control precision and consistency
Compare difficult raising, the switching of power loop also be easy to cause output power discontinuous.
If the power control circuit of GSM power amplifier is changed to be supplied to power according to control voltage Vramp output
The base current Ib of transistor, can effectively improve the efficiency of power amplifier, but it is big to be faced on piece resistance process deviation
Bring consistency problem, while there is also spectrum issues in switching.
Application publication number is CN105897201A, data of publication of application is the Chinese invention patent application on the 24th of August in 2016
In " a kind of GSM radio-frequency power amplifier ", a kind of GSM radio-frequency power amplifier is disclosed.Power control circuit therein is main
It is that collector bias voltage control mode is changed to base bias current control mode, to reduce area and reduce cost.So
And the accuracy of reference current is to be improved in the program, brings certain risk to volume production.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of power control circuits of saturated power amplifier, are power
Transistor provides base bias current, can improve the switching characteristic under small output power.
In order to solve the above technical problems, power control circuit packet of the saturated power amplifier provided by the present application based on base stage
Include two operational amplifiers and three transistors；The positive input terminal that voltage connects operational amplifier one by resistance one is controlled, is adjusted
The positive input terminal that voltage connects operational amplifier one by resistance two is saved, the positive input terminal of operational amplifier one also passes through resistance three
Ground connection；The negative input end of operational amplifier one is connected with output end, and connects the positive input terminal of operational amplifier two；Operation amplifier
The negative input end of device two is grounded by resistance four, and the collector of transistor three is also connected by resistance five；Operational amplifier two
Output end exports base bias voltage of the medium voltage as transistor one and transistor two；The collector of transistor one connects electricity
Source voltage, emitter connect the collector of transistor three；The collector of transistor two connects supply voltage, and emitter output provides
To the base bias current of power transistor；The base stage of transistor three connects collector by resistance six, is also connected by capacitor one
Connect RF signal input end；The collector voltage of transistor three is as feedback voltage；The emitter of transistor three is grounded.
Optionally, resistance eight is increased newly to be connected in parallel between the collector and emitter of transistor three.
What the application obtained has the technical effect that control output power by base bias current and/or base bias voltage
Power amplification circuit provides a kind of power control circuit based on base stage.It is described based on the power control circuit of base stage according to control
Voltage output processed is supplied to the base bias current of power transistor, and can make the output work of entire saturated power amplifier
Substantially exponent function relation between rate and control voltage, makes entire saturated power amplifier with output power represented by decibel milliwatt
Control voltage between it is substantially linear so that under small output power control voltage minor adjustments only generate it is smaller
Output power variation, improve switch spectrum.
Detailed description of the invention
Fig. 1 is a kind of rough schematic view of the power control circuit of existing GSM power amplifier.
When Fig. 2 is that power control circuit shown in FIG. 1 is used for power amplifier, the output power of power amplifier and control
Relation schematic diagram between voltage.
Fig. 3 is the electricity of the embodiment one of the power control circuit based on base stage of saturated power amplifier provided by the present application
Road schematic diagram.
Fig. 4 is the electricity of the embodiment two of the power control circuit based on base stage of saturated power amplifier provided by the present application
Road schematic diagram.
Description of symbols in figure: Vbat is supply voltage；Vramp is control voltage；Vos is to adjust voltage；RFin is
RF signal input end；RFout is RF signal output；Vcon is medium voltage；Vb is feedback voltage；Ir is intermediate electricity
Stream；Ib is the base bias current of power transistor；Icc is the collector current of power transistor；OP is operational amplifier；Q
For transistor；R is resistance；C is capacitor；L is inductance.
Specific embodiment
Referring to Fig. 3, this is the reality of the power control circuit based on base stage of saturated power amplifier provided by the present application
Apply example one.For ease of description, also illustrating power amplification circuit in Fig. 3.The power control circuit based on base stage has
Two input signals --- control voltage Vramp and adjusting voltage Vos, also has an output signal --- and it is supplied to power and puts
The base bias current Ib of power transistor QP in big circuit.It is important to note that power amplification circuit shown in Fig. 3
It is merely illustrative, the power control circuit provided by the present application based on base stage can be adapted for it is any by base bias current and/or
The power amplification circuit of base bias voltage control output power.
If the embodiment one of the power control circuit based on base stage include two operational amplifiers, three transistors,
Dry resistance and capacitor.The positive input terminal that voltage Vramp passes through one R1 connection operational amplifier of resistance, one OP1 is controlled, voltage is adjusted
Vos passes through the positive input terminal of two R2 connection operational amplifier of resistance, one OP1, and the positive input terminal of one OP1 of operational amplifier also passes through
Three R3 of resistance ground connection.One R1 of resistance and three R3 of resistance constitute a resistor voltage divider circuit, by selecting suitable resistance value can
To change after control voltage Vramp is divided into the voltage value of the positive input terminal of one OP1 of operational amplifier.Two R2 of resistance and resistance
Three R3 constitute another resistor voltage divider circuit, laggard by selecting suitable resistance value to can change adjusting voltage Vos partial pressure
Enter the voltage value of the positive input terminal of one OP1 of operational amplifier.The negative input end of one OP1 of operational amplifier is connected with output end, and
Connect the positive input terminal of two OP2 of operational amplifier.The negative input end of two OP2 of operational amplifier is grounded by four R4 of resistance, also logical
Cross the collector of five R5 connection transistor of resistance, three Q3.Four R4 of resistance and five R5 of resistance constitute another resistor voltage divider circuit,
By the electricity for entering the negative input end of two OP2 of operational amplifier after selecting suitable resistance value to can change feedback voltage V b partial pressure
Pressure value.The output end of two OP2 of operational amplifier exports medium voltage Vcon, and medium voltage Vcon is as one Q1 of transistor and crystalline substance
The base bias voltage of two Q2 of body pipe.One Q1 of transistor and two Q2 of transistor is, for example, bipolar transistor (BJT), metal-oxide
Object-semiconductor field effect transistor (MOSFET, abbreviation metal-oxide-semiconductor) etc., base stage, collector, the emitter difference of bipolar transistor
It is equivalent to grid, drain electrode, the source electrode of metal-oxide-semiconductor.The collector of one Q1 of transistor connects supply voltage Vbat, and emitter connects crystal
The collector of three Q3 of pipe.The collector of two Q2 of transistor connects supply voltage Vbat, and emitter output is supplied to power transistor
The base bias current Ib of QP.Three Q3 of transistor is, for example, heterojunction bipolar transistor (HBT).The base stage of three Q3 of transistor passes through
Six R6 connection collector of resistance, six R6 of resistance are that steady resistance is used to protect three Q3 of transistor.This base stage passes through with collector
The connected mode of resistance makes three Q3 of transistor be equivalent to a diode, and the collector of three Q3 of transistor, emitter difference are suitable
Anode, cathode in diode.The base stage of three Q3 of transistor also passes through one C1 connection RF signal input end RFin of capacitor.Crystal
The collector voltage of three Q3 of pipe is as feedback voltage V b.The emitter of three Q3 of transistor is grounded.
The power amplification circuit shown in Fig. 3 includes a power transistor QP, for example, bipolar junction transistor, MOS
Pipe etc..The base stage of power transistor QP receives the output electric current Ib of the power control circuit based on base stage, electricity by seven R7 of resistance
Hindering seven R7 is that steady resistance is used to protect power transistor QP.The base stage of power transistor QP also passes through two C2 connection radio frequency of capacitor
Signal input part RFin, two C2 of capacitor is capacitance.The collector of power transistor QP is as RF signal output
RFout, the collector of power transistor QP are also connected with one L1 of inductance, and one L1 of inductance is load inductance.The hair of power transistor QP
Emitter grounding.
The working principle of the embodiment one of power control circuit shown in Fig. 3 based on base stage are as follows: one OP1 of operational amplifier
Medium voltage Vcon, medium voltage Vcon are obtained after control voltage Vramp is first carried out logical process with two OP2 of operational amplifier
Control two Q2 of one Q1 of transistor and transistor.One Q1 of transistor provides collector voltage Vb i.e. feedback voltage for three Q3 of transistor
Vb, two operational amplifiers OP1, OP2 and two transistors Q1, Q2 are exactly to generate intermediate current for that will control voltage Vramp
And feedback voltage V b is obtained, to meet the operation interval of the collector voltage of three Q3 of transistor. Wherein adjusting voltage Vos is that fixed voltage value is used to adjust feedback voltage V b,
Therefore substantially linear between feedback voltage V b and control voltage Vramp.When three Q3 of transistor is in amplification region, current collection
Electrode current Ir can be described with approximate Ai Baisi-moore model (the Ebers-Moll model), Wherein αfFor common-base current gain, IESFor the reverse saturation current that base-emitter is tied, VBEFor base
Pole-emitter voltage, VTFor thermal voltage.Wherein k is Boltzmann constant, and T is absolute temperature, and q is the electricity of electronics
Amount.Due to the base emitter voltage V of three Q3 of transistorBEIt is exactly feedback voltage V b, collector current Ir is also referred to as intermediate current
Ir, therefore substantially exponent function relation between intermediate current Ir and feedback voltage V b.When between intermediate current Ir and feedback voltage V b
Substantially exponent function relation, at the same feedback voltage V b and control voltage Vramp between it is substantially linear when, intermediate current Ir with
Control substantially exponent function relation between voltage Vramp.Due to one Q1 of transistor and two Q2 of transistor base voltage having the same
That is medium voltage Vcon, and with the load of similar emitter --- the emitter load of one Q1 of transistor be three Q3 of transistor with
And the emitter load of six R6 of resistance and capacitor one C1, two Q2 of transistor are power transistor QP and seven R7 of resistance and electricity
Hold two C2, therefore one Q1 of transistor and two Q2 of transistor constitute current mirror, is intermediate by the collector current of three Q3 of transistor
Electric current Ir is mirrored to the emitter current of two Q2 of transistor, and the emitter current of two Q2 of transistor is exactly output to power transistor
The base bias current Ib, Ib=Ir of QP.
In the embodiment one of power control circuit shown in Fig. 3 based on base stage, three Q3 of transistor not only realizes output electricity
The exponential relationship of stream and input voltage, moreover it is possible to realize temperature-compensating.Linear pass between feedback voltage V b and control voltage Vramp
System, does not vary with temperature and changes.As temperature increases, intermediate current Ir can also be increased, and image current Ib also can be therewith
It increases.But collector current Icc=β × Ib of power transistor QP, parameter beta and temperature are negatively correlated.Pass through selection transistor
The suitable parameters of three Q3 can make the temperature between three Q3 input and output of transistor be positively correlated defeated with the input of power transistor
Temperature negative correlation between out is cancelled out each other, so that entire saturated power amplifier is to temperature-insensitive, (input and output are closed
System is not influenced by temperature and generates variation).
Power control circuit provided by the present application based on base stage output electric current Ib and input control voltage Vramp it
Between substantially have exponent relation.The output power Pout=Ib of entire saturated power amplifier2×Rload.Due to load resistance
Rload is constant, also substantially exponent function relation between output power Pout and control voltage Vramp.Therefore the application is exporting
When power P out very little, the variable quantity for adjusting output power Pout corresponding to control voltage Vramp is reduced, so as to improve
Response of the switching characteristic on frequency domain.Output power Pout_dBm=10log represented by decibel milliwatt10Pout, decibel milliwatt
It is substantially linear between represented output power Pout_dBm and control voltage Vramp.
Referring to Fig. 4, this is the reality of the power control circuit based on base stage of saturated power amplifier provided by the present application
Apply example two.Embodiment two and the difference of embodiment one are only that: having increased the collector that eight R8 of resistance is connected in parallel on three Q3 of transistor newly
Between emitter.Newly-increased eight R8 of resistance is in parallel with three Q3 of transistor, provides one when the control voltage Vramp of input is smaller
The image current Ib of a and Vramp linear electric current, at this time two Q2 of transistor output is the collector of three Q3 of transistor
Electric current and the sum of the electric current for flowing through eight R8 of resistance.After the control voltage Vramp of input increases, the leakage current of three Q3 of transistor is risen
Leading role, the electric current on eight R8 of resistance can be ignored.
Existing GSM power amplifier, output power Pout are adjusted by control voltage Vramp.If regulating degree
Too slow, then the rising of output power can be unable to reach the requirement of PVT (power versus time, power over time).If adjusted
Section degree is too fast, then the variation of output power will lead to very much the response of close-loop power control and switching characteristic on frequency domain fastly and ask
Topic.The power control circuit of existing GSM power amplifier, the collector voltage Vcc for being supplied to power transistor of output
It is substantially linear between control voltage Vramp, eventually lead to the output power Pout and control electricity of GSM power amplifier
It presses substantially at quadratic relationship between Vramp, this makes the minor adjustments that voltage Vramp is controlled in output power Pout very little
Biggish output power variation can be generated, switch spectrum problem is be easy to cause.Power control circuit provided by the present application is not only applicable in
In GSM power amplifier, it is also applied for other saturated power amplifiers.It is provided by the present application when being used for GSM power amplifier
Substantially exponent function relation between electric current Ib that power control circuit is exported and control voltage Vramp, eventually leads to GSM power and puts
Substantially exponent function relation between the output power Pout and control voltage Vramp of big device, this makes in output power Pout very little
When control voltage Vramp minor adjustments only generate the variation of lesser output power, to overcome switch spectrum problem.
The above is only preferred embodiment of the present application, it is not used to limit the application.Come for those skilled in the art
It says, various changes and changes are possible in this application.Within the spirit and principles of this application, made any modification, equivalent
Replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of power control circuit of saturated power amplifier based on base stage, characterized in that including two operational amplifiers and
Three transistors；The positive input terminal that voltage connects operational amplifier one by resistance one is controlled, voltage is adjusted and is connected by resistance two
The positive input terminal of operational amplifier one is connect, the positive input terminal of operational amplifier one also passes through resistance three and is grounded；Operational amplifier one
Negative input end be connected with output end, and connect the positive input terminal of operational amplifier two；The negative input end of operational amplifier two is logical
The ground connection of resistance four is crossed, the collector of transistor three is also connected by resistance five；The intermediate electricity of output end output of operational amplifier two
Press the base bias voltage as transistor one and transistor two；The collector of transistor one connects supply voltage, and emitter connects
Connect the collector of transistor three；The collector of transistor two connects supply voltage, and emitter output is supplied to power transistor
Base bias current；The base stage of transistor three connects collector by resistance six, also connects radiofrequency signal input by capacitor one
End；The collector voltage of transistor three is as feedback voltage；The emitter of transistor three is grounded.
2. power control circuit of the saturated power amplifier according to claim 1 based on base stage, characterized in that newly-increased electricity
Resistance eight is connected in parallel between the collector and emitter of transistor three.
3. power control circuit of the saturated power amplifier according to claim 1 or 2 based on base stage, characterized in that electricity
Resistance one with resistance three constitute a resistor voltage divider circuit, for control voltage after be supplied to operational amplifier one just
Input terminal；
Resistance two and resistance three constitute another resistor voltage divider circuit, for being supplied to operation amplifier after exchanging section voltage
The positive input terminal of device one；
Resistance four and resistance five constitute another resistor voltage divider circuit, for being supplied to operation amplifier after feedback voltage division
The negative input end of device two.
4. power control circuit of the saturated power amplifier according to claim 1 or 2 based on base stage, characterized in that brilliant
The base stage of body pipe three is connected with collector by resistance six, and this connection type makes transistor three be equivalent to a diode, brilliant
Collector, the emitter of body pipe three are respectively equivalent to the anode of diode, cathode.
5. power control circuit of the saturated power amplifier according to claim 1 or 2 based on base stage, characterized in that function
The base stage of rate transistor receives the output electric current of the power control circuit based on base stage by resistance seven, is also connected by capacitor two
RF signal input end；The collector of power transistor is also connected with inductance one as RF signal output；Power transistor
Emitter ground connection.
6. power control circuit of the saturated power amplifier according to claim 1 or 2 based on base stage, characterized in that brilliant
Body pipe one, transistor two and power transistor are bipolar transistor or metal-oxide-semiconductor, the base stage of bipolar transistor, collector, emitter
It is respectively equivalent to grid, drain electrode, the source electrode of metal-oxide-semiconductor；
Transistor three is heterojunction bipolar transistor.
7. power control circuit of the saturated power amplifier according to claim 1 or 2 based on base stage, characterized in that fortune
Amplifier one, operational amplifier two, transistor one, transistor two is calculated to be used to generate intermediate current according to control voltage and obtain
Feedback voltage, to meet the operation interval of the collector voltage of transistor three；Substantially at line between feedback voltage and control voltage
Sexual intercourse.
8. power control circuit of the saturated power amplifier according to claim 7 based on base stage, characterized in that base stage with
Collector is connected by resistance six makes transistor three be equivalent to a diode, and collector, the emitter of transistor three distinguish phase
When anode, the cathode in diode；The base emitter voltage of transistor three is exactly feedback voltage；It is put when transistor three is in
When great Qu, substantially exponent function relation between collector current, that is, intermediate current and base emitter voltage, that is, feedback voltage；
When substantially exponent function relation between intermediate current and feedback voltage, while substantially at line between feedback voltage and control voltage
When sexual intercourse, substantially exponent function relation between intermediate current and control voltage.
9. power control circuit of the saturated power amplifier according to claim 8 based on base stage, characterized in that transistor
One loads with the base voltage having the same of transistor two and similar emitter, therefore transistor one and transistor two are constituted
Collector current, that is, intermediate current of transistor three, is mirrored to the emitter current of transistor two, transistor two by current mirror
Emitter current be exactly to export to the base bias current of power transistor；Therefore output is inclined to the base stage of power grade transistor
Set substantially exponent function relation between electric current and control voltage；
Also substantially exponent function relation between the output power of saturated power amplifier and control voltage；
It is substantially linear between the output power and control voltage of saturated power amplifier represented by decibel milliwatt.
10. power control circuit of the saturated power amplifier according to claim 8 based on base stage, characterized in that crystal
It is positively correlated between the collector current and base emitter voltage of pipe three with temperature, the collector current and base of power transistor
With temperature negative correlation between the bias current of pole, it is positively correlated the temperature of transistor three negatively correlated mutually with the temperature of power transistor
It offsets, so that entire saturated power amplifier is to temperature-insensitive.
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| CN107147366B (en) * | 2017-06-12 | 2023-08-29 | 广州慧智微电子股份有限公司 | Temperature compensation circuit of radio frequency power amplifier |
| CN108366419A (en) * | 2018-01-05 | 2018-08-03 | 京信通信系统（中国）有限公司 | A kind of output power control method, controller and output power regulator |
| US10651796B2 (en) * | 2018-02-02 | 2020-05-12 | Advanced Semiconductor Engineering, Inc. | Resistorless power amplifier |
| CN111293993B (en) * | 2020-02-18 | 2021-05-25 | 广州慧智微电子有限公司 | Power control circuit |
| CN113783540B (en) * | 2021-08-17 | 2022-09-23 | 深圳飞骧科技股份有限公司 | Power amplifier circuit and bias circuit thereof |
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| CN104639052A (en) * | 2009-07-30 | 2015-05-20 | 高通股份有限公司 | Power amplifier bias current monitor and control mechanism |
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