CN106787659A - The short-circuit protection circuit that a kind of use P MOS are exported as high-side driver - Google Patents

The short-circuit protection circuit that a kind of use P MOS are exported as high-side driver Download PDF

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Publication number
CN106787659A
CN106787659A CN201710006312.7A CN201710006312A CN106787659A CN 106787659 A CN106787659 A CN 106787659A CN 201710006312 A CN201710006312 A CN 201710006312A CN 106787659 A CN106787659 A CN 106787659A
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CN
China
Prior art keywords
poles
resistance
exported
short
side driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710006312.7A
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Chinese (zh)
Inventor
朱春良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CURTIS TECHNOLOGY (SUZHOU) Co Ltd
Original Assignee
CURTIS TECHNOLOGY (SUZHOU) Co Ltd
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Filing date
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Application filed by CURTIS TECHNOLOGY (SUZHOU) Co Ltd filed Critical CURTIS TECHNOLOGY (SUZHOU) Co Ltd
Priority to CN201710006312.7A priority Critical patent/CN106787659A/en
Publication of CN106787659A publication Critical patent/CN106787659A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection

Abstract

The invention discloses the short-circuit protection circuit that a kind of use P MOS are exported as high-side driver; including P MOSFET drive tubes Q10; dc source Vin is exported by the s extremely high-side drivers that resistance R53 connects driving tube Q10 and is provided dc source; the d of Q10 extremely load outputs; resistance R62 is connected between s poles and g poles; resistance R53 two ends are connected to b, e pole of triode Q11 respectively, and the c poles of triode Q11 connect the g poles of Q10;The load outputs of the Q10 are also grounded by the resistance R32, the electric capacity C20 that are sequentially connected in series, and the tie point between R32 and C20 is connected to single-chip microcomputer, and single-chip microcomputer connects the g poles of Q10 by switch triode Q8.The short-circuit protection circuit that use P MOS provided by the present invention are exported as high-side driver, can effectively realize the output short circuit protection of high-side driver, and reliability is high, low in energy consumption, simple circuit, and cost is relatively low.

Description

The short-circuit protection circuit that a kind of use P-MOS is exported as high-side driver
Technical field
The present invention relates to high-side driver, the short-circuit protection electricity that more particularly to a kind of use P-MOS is exported as high-side driver Road.
Background technology
The existing general switching power tube for using of high-side driver output is p-type MOSFET, because compared to its drive of N-MOSFET Dynamic circuit is simple, but has the disadvantage that its short-circuit protection circuit is complicated, and prior art typically uses resistance sampling, control comparator output Driven to turn off P-MOSFET.In addition, prior art have the disadvantage when drive output loading be short-circuited when can not be effectively End drive circuit is closed, can so cause output driving to be in discontinuity on off state, P-MOSFET will be by continuous high current Impact, it is impossible to effectively close end drive circuit.
The content of the invention
The present invention seeks to:There is provided that a kind of reliability is high, low in energy consumption, simple circuit, lower-cost high-side driver output Short-circuit protection scheme.
The technical scheme is that:
The short-circuit protection circuit that a kind of use P-MOS is exported as high-side driver, including P-MOSFET driving tube Q10, direct current Source Vin is exported by the s extremely high-side drivers that resistance R53 connects driving tube Q10 and is provided dc source, and the d of Q10 extremely loads defeated Go out end, resistance R62 is connected between s poles and g poles, resistance R53 two ends are connected to b, e pole of triode Q11, triode respectively The c poles of Q11 connect the g poles of Q10;
The load outputs of the Q10 are also grounded by the resistance R32, the electric capacity C20 that are sequentially connected in series, the connection between R32 and C20 Point is connected to single-chip microcomputer, and single-chip microcomputer connects the g poles of Q10 by switch triode Q8.
B, e pole of the triode Q11 at the resistance R53 two ends connect s poles and the dc source Vin of Q10 respectively.
The triode Q8 base stages connect single-chip microcomputer, and grounded emitter, colelctor electrode connects the g poles of Q10 by resistance R49.
The s poles of the driving tube Q10 are also associated with voltage-stabiliser tube with g interpolars.
It is an advantage of the invention that:
The short-circuit protection circuit that use P-MOS provided by the present invention is exported as high-side driver, can effectively realize high-end The output short circuit protection of driving, reliability is high, low in energy consumption, simple circuit, and cost is relatively low.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment the invention will be further described:
Fig. 1 is the schematic diagram of the short-circuit protection circuit that use P-MOS of the present invention is exported as high-side driver;
Fig. 2 is a kind of implementing circuit schematic diagram of the invention.
Specific embodiment
Embodiment:
As shown in figure 1, the short-circuit protection circuit that disclosed use P-MOS is exported as high-side driver, including P- MOSFET drive tube Q10, dc source Vin connect the s poles of driving tube Q10 by resistance R53, and the d of Q10 extremely loads output End, is connected with resistance R62 between s poles and g poles, resistance R53 two ends are connected to b, e pole of triode Q11, triode Q11 respectively C poles connect Q10 g poles, b, e pole of the triode Q11 connect s poles and the dc source Vin of Q10 respectively.Vin is high-end Drive output to provide dc source, the electric current of Q10 is flowed through equal to the electric current that R53 flows through, when the voltage at R53 two ends is more than 0.7V When, b, e pole of Q11 can just turn on, and make the driving voltage Vgs of Q10 be 0, so that Q10 is turned off.Above procedure reaches Overcurrent protection, but after Q10 is turned off, the electric current for flowing through R53 is rapidly reduced to 0, Q11 and is cut off, and then Q10 is led again Logical, driving tube Q10 is in discontinuity on off state, it is impossible to effectively turn off driving output.
Level simultaneously to output end is circulated detection by existing scheme, and the load outputs of the Q10 are also by successively Resistance R32, electric capacity the C20 ground connection of series connection, the tie point between R32 and C20 are connected to single-chip microcomputer, occur when output loading is driven When short-circuit, it is low that single-chip microcomputer will detect output port level by R32(It is high level when not being short-circuited), single-chip microcomputer passes through Switch triode Q8 connects the g poles of Q10, so that single-chip microcomputer will turn off Q10, the triode Q8 base stages connection by turning off Q8 Single-chip microcomputer, grounded emitter, colelctor electrode connects the g poles of Q10 by resistance R49.This programme can be by adjusting the resistance of R53 resistance Value come set output overcurrent protection point.
Fig. 2 is the implementing circuit figure of the high-end drive circuit in a electric steering controller, and nominal drive output current is 1.5A(Due to the limitation of anti-reverse diode D5 encapsulation), over-current protection point is 5.18A.
J1-1 is exported to the high-end of electri forklift main contactor coil, and logic circuit key switch KSI is carried for high-side driver For dc source, accessed by anti-reverse diode D5, driving tube has selected the IRFR5410 of IR companies.This is a driving Voltage is 20V, and drain current is 13A, and conducting resistance is the P-MOSFET of 205m Ω, TO-252 encapsulation, and its conducting is low in energy consumption, Power of resisting voltaic impingement is strong, protective value reliability.The s poles of the driving tube Q10 are also associated with voltage-stabiliser tube D14 with g interpolars.The party Case can effectively realize the output short circuit protection of high-side driver, and reliability is high, low in energy consumption, simple circuit, and cost is relatively low.
The above embodiments merely illustrate the technical concept and features of the present invention, its object is to allow person skilled in the art Will appreciate that present disclosure and implement according to this, it is not intended to limit the scope of the present invention.It is all main according to the present invention The modification for wanting the Spirit Essence of technical scheme to be done, should all be included within the scope of the present invention.

Claims (4)

1. the short-circuit protection circuit that a kind of use P-MOS is exported as high-side driver, it is characterised in that:Driven including P-MOSFET Pipe Q10, dc source Vin are exported by the s extremely high-side drivers that resistance R53 connects driving tube Q10 and are provided dc source, Q10 D extremely load outputs, resistance R62 is connected between s poles and g poles, resistance R53 two ends are connected to triode Q11's respectively B, e pole, the c poles of triode Q11 connect the g poles of Q10;
The load outputs of the Q10 are also grounded by the resistance R32, the electric capacity C20 that are sequentially connected in series, the connection between R32 and C20 Point is connected to single-chip microcomputer, and single-chip microcomputer connects the g poles of Q10 by switch triode Q8.
2. the short-circuit protection circuit that use P-MOS according to claim 1 is exported as high-side driver, it is characterised in that: B, e pole of the triode Q11 at the resistance R53 two ends connect s poles and the dc source Vin of Q10 respectively.
3. the short-circuit protection circuit that use P-MOS according to claim 2 is exported as high-side driver, it is characterised in that: The triode Q8 base stages connect single-chip microcomputer, and grounded emitter, colelctor electrode connects the g poles of Q10 by resistance R49.
4. the short-circuit protection circuit that use P-MOS according to claim 3 is exported as high-side driver, it is characterised in that: The s poles of the driving tube Q10 are also associated with voltage-stabiliser tube with g interpolars.
CN201710006312.7A 2017-01-05 2017-01-05 The short-circuit protection circuit that a kind of use P MOS are exported as high-side driver Pending CN106787659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710006312.7A CN106787659A (en) 2017-01-05 2017-01-05 The short-circuit protection circuit that a kind of use P MOS are exported as high-side driver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710006312.7A CN106787659A (en) 2017-01-05 2017-01-05 The short-circuit protection circuit that a kind of use P MOS are exported as high-side driver

Publications (1)

Publication Number Publication Date
CN106787659A true CN106787659A (en) 2017-05-31

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107370117A (en) * 2017-07-11 2017-11-21 深圳金三立视频科技股份有限公司 A kind of output overcurrent and short-circuit protection circuit and a kind of electronic equipment
CN112531650A (en) * 2020-12-07 2021-03-19 华羿微电子股份有限公司 From power MOSFET who takes short-circuit protection

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204190352U (en) * 2014-11-26 2015-03-04 四川长虹欣锐科技有限公司 Automatically controlled output short circuit protection circuit
CN104617546A (en) * 2015-02-13 2015-05-13 北京豪沃尔科技发展股份有限公司 Output overcurrent and short circuit protection circuit
CN104917363A (en) * 2015-05-04 2015-09-16 惠州三华工业有限公司 Double-output power supply voltage stabilization protection circuit
CN206379876U (en) * 2017-01-05 2017-08-04 科蒂斯技术(苏州)有限公司 The short-circuit protection circuit that a kind of use P MOS are exported as high-side driver

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204190352U (en) * 2014-11-26 2015-03-04 四川长虹欣锐科技有限公司 Automatically controlled output short circuit protection circuit
CN104617546A (en) * 2015-02-13 2015-05-13 北京豪沃尔科技发展股份有限公司 Output overcurrent and short circuit protection circuit
CN104917363A (en) * 2015-05-04 2015-09-16 惠州三华工业有限公司 Double-output power supply voltage stabilization protection circuit
CN206379876U (en) * 2017-01-05 2017-08-04 科蒂斯技术(苏州)有限公司 The short-circuit protection circuit that a kind of use P MOS are exported as high-side driver

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107370117A (en) * 2017-07-11 2017-11-21 深圳金三立视频科技股份有限公司 A kind of output overcurrent and short-circuit protection circuit and a kind of electronic equipment
CN112531650A (en) * 2020-12-07 2021-03-19 华羿微电子股份有限公司 From power MOSFET who takes short-circuit protection

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