CN207868794U - Based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit - Google Patents
Based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit Download PDFInfo
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- CN207868794U CN207868794U CN201820166596.6U CN201820166596U CN207868794U CN 207868794 U CN207868794 U CN 207868794U CN 201820166596 U CN201820166596 U CN 201820166596U CN 207868794 U CN207868794 U CN 207868794U
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Abstract
The utility model is related to one kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, reversed shoot through when preventing switching mode driving to be supported on reverse power connection by the circuit, the reverse-connection preventing circuit includes PMOS tube, zener diode, first resistor, second resistance and capacitance, the anode of the drain electrode connection power supply of the PMOS tube, the source electrode of the PMOS tube is separately connected the cathode of zener diode, one end of first resistor, one end of one end of capacitance and switching mode driving load, the grid of the PMOS tube is separately connected the anode of zener diode, the other end of first resistor, the other end of capacitance and one end of second resistance, the other end of the second resistance is separately connected the other end of the cathode and switching mode driving load of power supply.Compared with prior art, the utility model has control simple and reliable, is easy to implement, the very low advantage of cost.
Description
Technical field
The utility model is related to motor drivers for electrical domain, and PMOS tube low-voltage DC supply is based on more particularly, to one kind
Drive power supply reverse-connection preventing circuit.
Background technology
Motor driver has been widely used for various automatic control control fields, efficient in the controls, accurately controls
System allows it in the every field extensive use such as industry, security protection, medical treatment, traffic, space flight, military affairs, have become national life with
The pith that can not be forgotten in production.It is required for considering one for all drive schemes and driving product similarly
Problem --- safe power supply problem.Because of 2 power cords in the practical application of motor driver, one positive one is negative,
It is reversed that inevitably there is a phenomenon where power cords in practical application, so at this time considering the anti-circnit NOT at power import
It is particularly important.It is needed on power tube by motor driver itself internal structure (inductive effect) and a two reversed poles
Reversed afterflow is used when PWM wave turns off during pipe is controlled as motor, is also exactly that this reversed diode occurs in power supply
Fatal consequence can be played when reversal connection, be directly connected by diode in power tube body when reverse power connection, in fact
It is exactly equivalent to and power supply is subjected to short circuit in outside, this damages power supply very big, gently then burns fuse, heavy then burn out
Power supply and driver.So the driver of not anti-circnit NOT can have very big design defect.In turn, if driver
It devises reverse-connection preventing circuit and is just avoided that the unnecessary damage that reverse power connection is brought, greatly improve the reliability of driver.
Reverse-connection preventing circuit can generally consider P-channel metal-oxide-semiconductor string at power import, and discomfort shares one of N-channel MOS pipe
The reason is that it is 0 that N pipes, which can cause ground level voltage not, there are the pressure differences of a ground level, are unfavorable for more drivers and cooperate
For ground.Can be much larger with N-channel MOS pipe conducting resistance but compared using P-channel power tube, this is the system by power tube itself
It is inevitable to make technique.Also it is exactly conducting resistance and the pressure drop of P power tubes itself simultaneously, can causes that there are one on power tube
Fixed power attenuation, but with advances in technology and itself conduction impedance of the raising p-type metal-oxide-semiconductor of metal-oxide-semiconductor manufacturing process
(Rds (on)) can be smaller and smaller, and what is had been carried out at present can accomplish tens milliohms, while metal-oxide-semiconductor Vds pressure drops itself
Also just several millivolts, conduction loss can be controlled in several watts substantially (depending on practical application electric current), and conduction loss is very small.
Anti- circnit NOT is still very feasible and it is necessary to sum for the application of small current driving device (within 10A).
By retrieval, China Patent Publication No. is that CN103441486A discloses a kind of anti-reverse protection electricity of high-current supply
The grid voltage on road, including zener diode parallel with one another and CMOS tube, the CMOS tube is protected by a bleeder circuit.The reality
With the few own power consumption of novel protected circuits as practical；Protection circuit can pass through high current；The wave of high intensity can be resisted
Gush interference；But the mainly anti-reverse protection of high-current supply that the utility model is directed to, and the not soft start protection of capacitance
With use V of the zener diode to metal-oxide-semiconductorGSClamper is protected.
Utility model content
The purpose of this utility model is exactly to be provided a kind of based on PMOS to overcome the problems of the above-mentioned prior art
Pipe low-voltage DC supply drive power supply reverse-connection preventing circuit.
The purpose of this utility model can be achieved through the following technical solutions：
One kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, prevents switching mode from driving by the circuit
Reversed shoot through of the dynamic load in reverse power connection, the reverse-connection preventing circuit include PMOS tube, zener diode, the first electricity
Resistance, second resistance and capacitance, the anode of the drain electrode connection power supply of the PMOS tube, the source electrode of the PMOS tube are separately connected
One end that the cathode of zener diode, one end of first resistor, one end of capacitance and switching mode driving load, the PMOS tube
Grid be separately connected one end of the anode of zener diode, the other end of first resistor, the other end of capacitance and second resistance,
The other end of the second resistance is separately connected the other end of the cathode and switching mode driving load of power supply.
Preferably, the power supply is DC power supply.
Preferably, the power supply is the power supply that voltage range is 12-100V.
Preferably, switching mode driving load is that switching mode metal-oxide-semiconductor drives bridge circuit.
Preferably, the switching mode metal-oxide-semiconductor or IGBT driving bridge circuits include three-phase brushless, three-phase stepping or servo electricity
Drive circuit and two-phase dual H-bridge stepper motor driving circuit.
Preferably, the first resistor and second resistance are Chip-R.
Preferably, the PMOS tube is according to the different pressure resistances of the size of driver actual power electric current selection and electric current energy
The PMOS tube of power.
Preferably, the zener diode is the zener diode of 15V.
Compared with prior art, the utility model has the following advantages：
1, the utility model circuit is with the anti-circuit reversal connection of pure hardware circuit, without another plus control signal.Control it is simple and
Reliably, it is easy to implement, cost is very low.
2, the utility model circuit all can realize that (high current, which can be selected, inserts with the resistance of patch, diode, metal-oxide-semiconductor
Part metal-oxide-semiconductor), it can be achieved that full-automatic patch produces, while can be selected not according to the size of driver actual power electric current
It is applied widely with the metal-oxide-semiconductor of pressure resistance and current capacity.
Description of the drawings
Fig. 1 is the circuit theory topological diagram of the utility model；
Fig. 2 is that the three-phase brushless, three-phase stepping and servo motor switching mode of the utility model drive load circuit structure to show
It is intended to；
Fig. 3 is that the two-phase dual H-bridge stepper motor switching mode of the utility model drives load circuit structural schematic diagram.
Specific implementation mode
Below by the technical scheme in the utility model embodiment is clearly and completely described, it is clear that described
Embodiment is a part of the embodiment of the utility model, rather than whole embodiments.Based on the embodiments of the present invention, originally
The every other embodiment that field those of ordinary skill is obtained without making creative work should all belong to this
The range of utility model protection.
As shown in Figure 1, a kind of being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, it is anti-by the circuit
Only switching mode drives conducting when being supported on reverse power connection, including：PMOS tube Q0, zener diode ZD1, first resistor R1,
2 foot of drain electrode of two resistance R2 and capacitance C1, the PMOS tube Q0 connect the anode of power supply, the source electrode 3 of the PMOS tube Q0
Foot is separately connected the cathode of zener diode ZD1, one end of first resistor R1, one end of capacitance C1 and switching mode driving load
1 foot of grid of one end, the PMOS tube Q0 is separately connected the anode of zener diode ZD1, the other end of first resistor R1, electricity
Hold one end of the other end and second resistance R2 of C1, the other end of the second resistance R2 is separately connected the cathode of power supply and opens
Pass type drives the other end of load and ground connection.
The power supply is DC power supply, the supply voltage ranging from 12-75V.The switching mode driving load
Bridge circuit is driven for switching mode metal-oxide-semiconductor.
As shown in Figures 2 and 3, the switching mode metal-oxide-semiconductor drive axle includes three-phase brushless, three-phase stepping or servo motor
Driving circuit and two-phase dual H-bridge stepper motor driving circuit.
The first resistor R1 and second resistance R2 is Chip-R.The PMOS tube Q0 is according to driver reality
The size of supply current selects the PMOS tube of different pressure resistances and current capacity.The zener diode ZD1 is the voltage stabilizing two of 15V
Pole pipe.
The circuit operation principle of the utility model：
It can be by being carried to the divider resistance that conducting is rear end before PMOS tube body Q0 diodes when circuit power wiring is correct
For V (GS) voltage, and then it is back-end circuit normal power supply to open power tube.When power cord "+,-" pole of circuit power entrance connects
Anti-, reverse current can not can not also provide PMOS tube Q0 cut-in voltages, and then equivalent implementation by PMOS tube body Q0 diodes
Open circuit, with protection power source and driver.
By taking supply voltage is direct current 24V as an example, at this point, first resistor R1 and second resistance R2 is 10K Ω, capacitance C1 is
10nF, zener diode SMAZ15.
When power supply normally accesses, the partial pressure of about 12V is will produce on first resistor R1, and the maximum of PMOS tube Q0 is opened
Voltage is V (gs)=4V, and PMOS tube Q0 can be powered with normally to back-end circuit at this time.
If power supply is reversed, PMOS tube Q0 and zener diode ZD1 are not turned on, and circuit cannot be formed into a loop, thus
The safety of open-circuit-protection back-end circuit is formed on main power supply circuit.
It is pressed with a certain range since the V (gs) of PMOS tube Q0 is resistance to, it is desirable that V (gs)≤20V, therefore zener diode ZD1 can be
By V (gs) surely in 15V when input voltage is more than 30V, and then protect PMOS tube Q0.
Capacitance C1 has soft start defencive function.
Above description is only a specific implementation of the present invention, but the scope of protection of the utility model is not limited to
In this, any one skilled in the art within the technical scope disclosed by the utility model, can readily occur in various
Equivalent modifications or substitutions, these modifications or substitutions should be covered within the scope of the utility model.Therefore, this practicality
Novel protection domain should be subject to the protection scope in claims.
Claims (8)
1. one kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, prevent switching mode from driving by the circuit
It is supported on reversed shoot through when reverse power connection, which is characterized in that the reverse-connection preventing circuit includes PMOS tube, two pole of voltage stabilizing
Pipe, first resistor, second resistance and capacitance, the anode of the drain electrode connection power supply of the PMOS tube, the source of the PMOS tube
Pole is separately connected one end that the cathode of zener diode, one end of first resistor, one end of capacitance and switching mode driving load, institute
The grid for the PMOS tube stated is separately connected the anode of zener diode, the other end of first resistor, the other end of capacitance and second
One end of resistance, the other end of the second resistance are separately connected the other end of the cathode and switching mode driving load of power supply.
2. it is according to claim 1 a kind of based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, it is special
Sign is that the power supply is DC power supply.
3. one kind according to claim 1 or 2 is based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit,
It is characterized in that, the power supply is the power supply that voltage range is 12-100V.
4. it is according to claim 1 a kind of based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, it is special
Sign is that switching mode driving load is that switching mode metal-oxide-semiconductor or IGBT drive bridge circuit.
5. it is according to claim 4 a kind of based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, it is special
Sign is that the switching mode metal-oxide-semiconductor or IGBT driving bridge circuits include three-phase brushless, three-phase stepping or servo motor driving electricity
Road and two-phase dual H-bridge stepper motor driving circuit.
6. it is according to claim 1 a kind of based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, it is special
Sign is that the first resistor and second resistance are Chip-R.
7. it is according to claim 1 a kind of based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, it is special
Sign is that the PMOS tube is that the PMOS of different pressure resistances and current capacity is selected according to the size of driver actual power electric current
Pipe.
8. it is according to claim 1 a kind of based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit, it is special
Sign is that the zener diode is 15V zener diodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820166596.6U CN207868794U (en) | 2018-01-31 | 2018-01-31 | Based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820166596.6U CN207868794U (en) | 2018-01-31 | 2018-01-31 | Based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
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| CN207868794U true CN207868794U (en) | 2018-09-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098605A (en) * | 2018-01-31 | 2019-08-06 | 上海安浦鸣志自动化设备有限公司 | One kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
| CN112003242A (en) * | 2020-08-03 | 2020-11-27 | 珠海格力电器股份有限公司 | Protection device and method for IGBT (insulated Gate Bipolar transistor) driving power supply in automobile and automobile |
-
2018
- 2018-01-31 CN CN201820166596.6U patent/CN207868794U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098605A (en) * | 2018-01-31 | 2019-08-06 | 上海安浦鸣志自动化设备有限公司 | One kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
| CN112003242A (en) * | 2020-08-03 | 2020-11-27 | 珠海格力电器股份有限公司 | Protection device and method for IGBT (insulated Gate Bipolar transistor) driving power supply in automobile and automobile |
| CN112003242B (en) * | 2020-08-03 | 2021-07-30 | 珠海格力电器股份有限公司 | Protection device and method for IGBT (insulated Gate Bipolar transistor) driving power supply in automobile and automobile |
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