CN106785851A - For the main power amplifier device of all solid state ultrafast laser - Google Patents
For the main power amplifier device of all solid state ultrafast laser Download PDFInfo
- Publication number
- CN106785851A CN106785851A CN201710068847.7A CN201710068847A CN106785851A CN 106785851 A CN106785851 A CN 106785851A CN 201710068847 A CN201710068847 A CN 201710068847A CN 106785851 A CN106785851 A CN 106785851A
- Authority
- CN
- China
- Prior art keywords
- solid state
- ultrafast laser
- main power
- power amplifier
- amplifier device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 22
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 15
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims abstract description 15
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims abstract description 12
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 14
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- -1 polytetrafluoroethylene Polymers 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005350 fused silica glass Substances 0.000 claims description 4
- 230000003321 amplification Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0407—Liquid cooling, e.g. by water
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of main power amplifier device for all solid state ultrafast laser, it includes diffuse-reflective cavity, xenon lamp and Nd is provided with the diffuse-reflective cavity：Ce：YAG crystal, the Nd：Ce：The outside of YAG crystal is arranged with glass bushing, and the xenon lamp connects delay circuit, and the delay circuit is also connected with seed light source.The present invention can effectively realize the output of high-peak power, solve the main power amplifier device for all solid state ultrafast laser of the problems such as ultrafast laser power is low, energy is weak.
Description
Technical field
Put the present invention relates to all solid state ultrafast laser, more particularly to a kind of main power for all solid state ultrafast laser
Big device.
Background technology
At present, in the main power amplifier device of all solid state ultrafast laser, mostly using Nd：YAG crystal；Xenon lamp；It is unrestrained anti-
The mode in chamber is penetrated, cooling liquid uses common industry water, not only capacity usage ratio is low but also exists reliable using this scheme
Property, the problem of stability.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of output that can effectively realize high-peak power, solves super
The main power amplifier device for all solid state ultrafast laser of the problems such as laser power is low, energy is weak soon.
In order to solve the above-mentioned technical problem, the invention provides a kind of main power amplification for all solid state ultrafast laser
Device, it includes diffuse-reflective cavity, xenon lamp and Nd is provided with the diffuse-reflective cavity：Ce：YAG crystal, the Nd：Ce：YAG crystal
Outside be arranged with glass bushing, the xenon lamp connects delay circuit, and the delay circuit is also connected with seed light source.
Further, the internal layer of the diffuse-reflective cavity is coated with polytetrafluoroethylene (PTFE) and constitutes polytetrafluoroethylene (PTFE) diffuse-reflective cavity.
Further, the xenon lamp is arranged on the horizontal center position of diffuse-reflective cavity.
Further, the Nd：Ce：YAG crystal is two, and is symmetricly set on the both sides of xenon lamp.
Further, one of them described Nd：Ce：A diameter of 7mm of YAG crystal, another described Nd：Ce：YAG crystal
A diameter of 8mm.
Further, the glass bushing is fused quartz glass sleeve pipe.
Further, in the glass bushing and Nd：Ce：Deionized water is filled between YAG crystal.
The present invention can effectively realize the output of high-peak power, solve the problems such as ultrafast laser power is low, energy is weak
The main power amplifier device for all solid state ultrafast laser.
Brief description of the drawings
Fig. 1 is the amplifying device that prior art is used for all solid state ultrafast laser；
Fig. 2 is structure chart one of the present invention for the amplifying device of all solid state ultrafast laser；
Fig. 3 is structure chart two of the present invention for the amplifying device of all solid state ultrafast laser；
Fig. 4 is circuit diagram of the present invention for the amplifying device of all solid state ultrafast laser；
Fig. 5 is amplification effect figure one of the present invention；
Fig. 6 is amplification effect figure two of the present invention；
Fig. 7 is amplification effect figure three of the present invention；
Fig. 8 is amplification effect figure four of the present invention；
Fig. 9 is amplification effect figure five of the present invention.
In figure, 1, diffuse-reflective cavity, 2, xenon lamp, 3, Nd：Ce：YAG crystal, 4, glass bushing, 5, deionized water, 6, time delay electricity
Road, 7, seed light source, 8, air.
Specific embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, so that those skilled in the art can be with
It is better understood from the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
As shown in Figures 1 to 7, it is main power amplifier device of the present invention for all solid state ultrafast laser, it is included
Diffuse-reflective cavity, is provided with xenon lamp and Nd in the diffuse-reflective cavity：Ce：YAG crystal, the Nd：Ce：The outside of YAG crystal is arranged with
Glass bushing, the xenon lamp connects delay circuit, and the delay circuit is also connected with seed light source.
Conventional art uses Nd：YAG crystal, the present invention uses Nd：Ce：YAG crystal, it has suction higher
Produce effects rate, conversion efficiency and capacity usage ratio, can efficiently absorb the energy produced by xenon lamp and be converted into being conducive to Nd
The spectral region of element absorption, improves conversion efficiency and capacity usage ratio.
The internal layer of the diffuse-reflective cavity is coated with polytetrafluoroethylene (PTFE) and constitutes polytetrafluoroethylene (PTFE) diffuse-reflective cavity.Using polytetrafluoroethylene (PTFE)
Powder chambers have conversion efficiency and reflectivity higher compared with traditional ceramic chamber, improve the capacity usage ratio of system.
The xenon lamp is arranged on the horizontal center position of diffuse-reflective cavity.
Single xenon lamp is used in conventional art, and one Nd is only set in its side：YAG crystal, and this technology
In scheme, the Nd：Ce：YAG crystal is two, and is symmetricly set on the both sides of xenon lamp, and it can effectively lift energy profit
With rate, and the external optical system is coordinated can effectively to realize that main power multi-stage amplifies.Using single xenon lamp, both sides Nd：Ce：
YAG crystal, can fully, efficiently utilize the energy of xenon lamp, and realize the maximization of the utilization of resources.
One of them described Nd：Ce：A diameter of 7mm of YAG crystal, another described Nd：Ce：YAG crystal it is a diameter of
8mm。
The glass bushing is fused quartz glass sleeve pipe, using fused quartz glass sleeve pipe as water through structure, is dissipated ensureing
Application risk is reduced while the thermal efficiency and water-carrying capacity.
In conventional art, cooling liquid use common industry water, using this scheme not only capacity usage ratio it is low but also
There is a problem of reliability, stability, and in being originally technical scheme, in the glass bushing and Nd：Ce：Between YAG crystal
Filling deionized water.
Cooling liquid uses deionized water, can effectively reduce the energy loss of optical system, reduces suction of the water to light
Receive, being reduced on the premise of improving capacity usage ratio because of the risk brought water absorbs, improve the reliability of system and steady
It is qualitative, the transmissivity of system is not only improved using deionized water, the radiating efficiency of system is solved again.
In the specific implementation, xenon lamp is controlled to be powered with seed light source by delay circuit, as shown in figure 4, produced by xenon lamp
Light by after the high-efficiency reflective of diffuse-reflective cavity, being uniformly radiated at Nd：Ce：On YAG crystal, can be to ultraviolet light using Ce ions
Spectrum area's photon energy is produced and absorbed well, and energy is passed to Nd ions in the way of radiationless transition, so as to increase
The utilization rate of spectrum, Nd belongs to four-level system, theoretical according to energy level transition, and spectral region that Nd elements can be produced exists
Near 1064nm, after crystal reaches maximum population inversion, as shown in figure 8, seed light source exports the laser of 1064nm, according to
The quantum-mechanical theory of Ai Yinsitai, the laser produced by seed light source can effectively be amplified, and then pass through external optical system
After system, realize that effective main power multi-stage amplifies, as shown in figure 9, realizing that uniform light spots are exported.
Embodiment described above is only the preferred embodiment lifted to absolutely prove the present invention, protection model of the invention
Enclose not limited to this.Equivalent substitute or conversion that those skilled in the art are made on the basis of the present invention, in the present invention
Protection domain within.Protection scope of the present invention is defined by claims.
Claims (7)
1. a kind of main power amplifier device for all solid state ultrafast laser, it is characterised in that it includes diffuse-reflective cavity, institute
State and be provided with diffuse-reflective cavity xenon lamp and Nd：Ce：YAG crystal, the Nd：Ce：The outside of YAG crystal is arranged with glass bushing, institute
Xenon lamp connection delay circuit is stated, the delay circuit is also connected with seed light source.
2. the main power amplifier device for all solid state ultrafast laser according to claim 1, it is characterised in that described
The internal layer of diffuse-reflective cavity is coated with polytetrafluoroethylene (PTFE) and constitutes polytetrafluoroethylene (PTFE) diffuse-reflective cavity.
3. the main power amplifier device for all solid state ultrafast laser according to claim 1, it is characterised in that described
Xenon lamp is arranged on the horizontal center position of diffuse-reflective cavity.
4. the main power amplifier device for all solid state ultrafast laser according to claim 1, it is characterised in that described
Nd：Ce：YAG crystal is two, and is symmetricly set on the both sides of xenon lamp.
5. the main power amplifier device for all solid state ultrafast laser according to claim 4, it is characterised in that wherein
One Nd：Ce：A diameter of 7mm of YAG crystal, another described Nd：Ce：A diameter of 8mm of YAG crystal.
6. the main power amplifier device for all solid state ultrafast laser according to claim 1, it is characterised in that described
Glass bushing is fused quartz glass sleeve pipe.
7. the main power amplifier device for all solid state ultrafast laser according to claim 6, it is characterised in that in institute
State glass bushing and Nd：Ce：Deionized water is filled between YAG crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710068847.7A CN106785851A (en) | 2017-02-08 | 2017-02-08 | For the main power amplifier device of all solid state ultrafast laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710068847.7A CN106785851A (en) | 2017-02-08 | 2017-02-08 | For the main power amplifier device of all solid state ultrafast laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106785851A true CN106785851A (en) | 2017-05-31 |
Family
ID=58955665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710068847.7A Pending CN106785851A (en) | 2017-02-08 | 2017-02-08 | For the main power amplifier device of all solid state ultrafast laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106785851A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5487079A (en) * | 1995-01-05 | 1996-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Continuously tunable UV Ce:LiSAF solid state laser |
| CN1306325A (en) * | 2001-02-23 | 2001-08-01 | 西南技术物理研究所 | Transversely wind-cooled bidoped crystal laser |
| CN1423380A (en) * | 2001-11-23 | 2003-06-11 | 中国科学院福建物质结构研究所 | 1.3mum waveband nano second neodymium-doped crystal laser controlled by light path delay wave-absorption method |
| CN1681171A (en) * | 2004-04-05 | 2005-10-12 | 深圳市大族激光科技股份有限公司 | Pumping cavity of lateral pumping solid laser of semiconductor laser with big power |
| CN2904400Y (en) * | 2005-10-24 | 2007-05-23 | 深圳市大族激光科技股份有限公司 | Semiconductor laser central filling side pumping cavity |
| CN201374494Y (en) * | 2009-01-22 | 2009-12-30 | 北京镭宝光电技术有限公司 | Single-lamp double-rod laser |
| CN201570773U (en) * | 2010-01-04 | 2010-09-01 | 重庆师范大学 | Single-bar one-way pumping system for high-power laser bar |
| CN103414095A (en) * | 2013-08-01 | 2013-11-27 | 中国航空工业集团公司北京航空制造工程研究所 | Laser-gathering cavity for solid laser |
| CN206575008U (en) * | 2017-02-08 | 2017-10-20 | 北京宏强富瑞技术有限公司 | Main power amplifier device for all solid state ultrafast laser |
-
2017
- 2017-02-08 CN CN201710068847.7A patent/CN106785851A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5487079A (en) * | 1995-01-05 | 1996-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Continuously tunable UV Ce:LiSAF solid state laser |
| CN1306325A (en) * | 2001-02-23 | 2001-08-01 | 西南技术物理研究所 | Transversely wind-cooled bidoped crystal laser |
| CN1423380A (en) * | 2001-11-23 | 2003-06-11 | 中国科学院福建物质结构研究所 | 1.3mum waveband nano second neodymium-doped crystal laser controlled by light path delay wave-absorption method |
| CN1681171A (en) * | 2004-04-05 | 2005-10-12 | 深圳市大族激光科技股份有限公司 | Pumping cavity of lateral pumping solid laser of semiconductor laser with big power |
| CN2904400Y (en) * | 2005-10-24 | 2007-05-23 | 深圳市大族激光科技股份有限公司 | Semiconductor laser central filling side pumping cavity |
| CN201374494Y (en) * | 2009-01-22 | 2009-12-30 | 北京镭宝光电技术有限公司 | Single-lamp double-rod laser |
| CN201570773U (en) * | 2010-01-04 | 2010-09-01 | 重庆师范大学 | Single-bar one-way pumping system for high-power laser bar |
| CN103414095A (en) * | 2013-08-01 | 2013-11-27 | 中国航空工业集团公司北京航空制造工程研究所 | Laser-gathering cavity for solid laser |
| CN206575008U (en) * | 2017-02-08 | 2017-10-20 | 北京宏强富瑞技术有限公司 | Main power amplifier device for all solid state ultrafast laser |
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| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170531 |
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| WD01 | Invention patent application deemed withdrawn after publication |