CN102368583B - Method for improving efficiency of pump utilization of solid state laser and product thereof - Google Patents

Method for improving efficiency of pump utilization of solid state laser and product thereof Download PDF

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CN102368583B
CN102368583B CN 201110361578 CN201110361578A CN102368583B CN 102368583 B CN102368583 B CN 102368583B CN 201110361578 CN201110361578 CN 201110361578 CN 201110361578 A CN201110361578 A CN 201110361578A CN 102368583 B CN102368583 B CN 102368583B
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laser
quantum dot
pump
transformation
light
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CN102368583A (en
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严金华
程成
马德伟
陈钢
张航
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Photonics Laser Technology Dongguan Co ltd
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Zhejiang University of Technology ZJUT
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Abstract

The invention relates to a method for improving an efficiency of pump utilization of a solid state laser and a product thereof. According to the method, a wavelength conversion material blended with a semiconductor quantum dot is placed between a solid state laser material and a pump light source; the wavelength absorbs lights with short wavelengths among pump lights of a solid state laser and converts the absorbed lights into lights at an absorption peak of the laser material, so that lights that are originally not within a range of the absorption peak of the laser material can be absorbed by the laser material. The method provided in the invention can be applied to laser pumped by a xenon lamp or a sunlight; besides, the method not only can be applied to an end-pumped laser but also can be used for a side-pumped laser; moreover, the method has advantages of high efficiency and simpleness and the like; and it is also no need to make a big adjustment on the laser structure.

Description

A kind of method that improves efficiency of pump utilization of solid state laser and products thereof
Technical field
The present invention relates to a kind of method that improves efficiency of pump utilization of solid state laser, belong to laser and field of optoelectronic devices.
Background technology
Solid state laser is the solid state laser that a class is widely used, extensive application aspect laser processing, laser labelling, scientific research etc.Solid laser material commonly used has the doped yttrium aluminum garnet class, mixes and fluoridize lithium fluoride like, doped yttrium vanadate and doping potassium-gadolinium class etc., and the characteristics of their absworption peaks are to have a plurality of absworption peaks and discrete each other.Present laser pumping source, except diode-end-pumped is for a certain absworption peak, the sunlight of all the other pumping sources such as xenon lamp, bromine tungsten filament lamp, krypton lamp, mercury lamp and in recent years proposition etc., its spectral distribution scope is all wider, the wave band of the Energy distribution of significant proportion beyond the absworption peak of solid laser material, especially partly there is the energy of significant proportion to can not get effective utilization the visible light short wavelength, because this part Conversion of Energy be hot, the heat radiation of solid state laser proposed requirements at the higher level.
Semiconductor-quantum-point is that a kind of size is at the granular materials of several nanometers, the preparation method is comparative maturity also, as utilize directly growth quantum point in silicate glass, fluoride glass of high-temperature fusion annealing method, also can produce the quantum dot that is scattered in the colloid with chemical method, again these quantum dots are mixed organic optical materials, such as UV glue, PMMA etc., make the solid-state material that is mixed with quantum dot.Be the CdSe semiconductor nano of 2.1nm such as particle radius, it all has stronger absorption to the light that wavelength is shorter than 600nm, and at the wave band place of 610nm emission peak is arranged.In addition large characteristics of semiconductor nano, can be by the quantum dot of preparation variable grain radius, make its emission peak move to the specified wavelength position, its absworption peak is also mobile accordingly, can customize the semiconductor quantum spot size for the position of the absworption peak of solid state laser like this.
Summary of the invention
The present invention will overcome the existing low shortcoming of solid state laser pumping efficiency, a kind of method that improves efficiency of pump utilization of solid state laser and products thereof is provided, and need not laser structure is done large adjustment.
The method of raising efficiency of pump utilization of solid state laser of the present invention comprises the steps:
Step 1, preparation is mixed with the material for transformation of wave length of semiconductor-quantum-point, the light of the short wavelength of described material for transformation of wave length absorbing solid laser pump light part also is converted into the light at laser material absworption peak place so that originally not the light in laser material absworption peak scope absorbed by laser material;
Step 2 is placed described material for transformation of wave length, on the path of the placement location of described material for transformation of wave length before exciting light is transferred to described solid laser material between described solid laser material and pump light source.
Further, described step 1 adopts fusion method directly to produce quantum dot in silicate glass or borate glass; Rationally control preparation condition, so that the quantum dot that produces has suitable size, described quantum dot emission peak is in the absworption peak place of solid laser material, described quantum dot will be the light that is in the quantum dot absorption spectrum, be converted into the light that can be absorbed by solid laser material, thereby provide pump energy for solid laser material.
Perhaps, described step 1 comprises:
(1) adopt chemical method to produce the quantum dot that is scattered in colloid, rationally control preparation condition, so that the quantum dot that produces has suitable size, described quantum dot emission peak is in the absworption peak place of solid laser material, described quantum dot will be the light that is in the quantum dot absorption spectrum, be converted into the light that can be absorbed by solid laser material, thereby provide pump energy for solid laser material;
(2) again these quantum dots are mixed the transparent optical host material and mix, make the solid-state material that is mixed with quantum dot.
Further again, described solid laser material is the doped yttrium aluminum garnet class, mixes and fluoridize lithium fluoride like, doped yttrium vanadate or doping potassium-gadolinium class; The host material of described material for transformation of wave length is silica glass, silicate glass, fluoride glass, optics ultraviolet glue, PMMA or PS; Institute's doped quantum dot is in the described material for transformation of wave length: the CdSe-ZnSe of CdSe or CdS or nucleocapsid structure or CdSe-ZnS or CdS-ZnS; The lateral size of dots of mixing in the described material for transformation of wave length is at 1~10nm.
Adopt the efficient solid laser pump of method of the present invention, comprise solid laser material and pump light source, it is characterized in that: between described solid laser material and pump light source, place a kind of material for transformation of wave length that is mixed with semiconductor-quantum-point, the light of the short wavelength of described material for transformation of wave length absorptive pumping light source part also is converted into the light at described solid laser material absworption peak place, on the path of the placement location of described material for transformation of wave length before exciting light is transferred to described solid laser material.
Further, the laser pumping mode is end pumping, and the shape of material for transformation of wave length is sheet.
Further, the laser pumping mode is at the profile pump by laser pump cavity, and the shape of material for transformation of wave length is the tubular with the laser pump cavity similar shape.
Further again, described laser pumping source can be one of xenon lamp, bromine tungsten filament lamp, krypton lamp or sunlight, or its combination.
The present invention is by placing a kind of material for transformation of wave length that is mixed with semiconductor-quantum-point between solid laser material and pump light source, the light of the short wavelength of this wavelength absorption solid laser pumping light part also is converted into the light at laser material absworption peak place so that originally not the light in laser material absworption peak scope absorbed by laser material.The present invention improves the method for efficiency of pump utilization of solid state laser, the laser that can be used for xenon lamp or sunlight pumping, the laser that both can be used for end pumping also can be used for the laser of profile pump, has to need not laser structure is done the advantages such as large adjustment, method be simple.
The principle of invention is as follows:
Realize by between solid laser material and pump light source, placing a kind of material for transformation of wave length.This material for transformation of wave length is a kind of optical material that is doped with the lead selenide quantum dot of suitable particles radius, and substrate can be optical glass or organic optical materials.When the pump light of laser shines on the material for transformation of wave length, the light of its short wavelength's part is absorbed by material for transformation of wave length, and luminous.The particle radius of choose reasonable quantum dot so that the emission wavelength of material for transformation of wave length is in the absorption bands of solid laser material so that originally not the light in solid laser material absworption peak scope absorbed by solid laser material.
The method of raising efficiency of pump utilization of solid state laser of the present invention can be used for the solid state laser of xenon lamp, bromine tungsten filament lamp, krypton lamp or sunlight pumping, both can be used for the laser of end pumping, also can be used for the laser of profile pump.
When the size reduction of semi-conducting material is following to certain size (the Bohr radius of the bound exciton in the semiconductor piece material), its energy level will produce separate structure, and generation quantum size effect, the center that is its emission peak changes with the size of quantum dot, therefore can prepare the quantum dot of different size to produce the wavelength of needs.Because the process characteristic of quantum dot preparation, the quantum dot size of preparation presents a Unimodal Distribution, and the spectrum of generation has one fixed width (about tens nanometers).Prepare the different quantum dot of particle size under the Different Preparation condition, the centre wavelength of the spectrum that they produce is different.Rationally control preparation condition, so that the emission peak of the quantum dot that produces is in the absworption peak place of solid laser material, these quantum dots will be the light that is in the quantum dot absorption spectrum, is converted into the light that can be absorbed by solid laser material, thereby provide pump energy for solid laser material.
Material for transformation of wave length be prepared with two kinds of basic skills: the one, utilize fusion method directly in glass, to produce quantum dot, can be silicate glass or borate glass; The 2nd, produce the quantum dot that is scattered in colloid with chemical method, again these quantum dots are mixed transparent optical material and mix (such as optics ultraviolet glue, PMMA etc.), make the solid-state material that is mixed with quantum dot.
The pump mode of laser has two kinds of end pumping and profile pumps.For the end pumping form, the solid-state material that is mixed with quantum dot is prepared into tabular, the tangent plane of size and laser crystal is suitable, and is placed on the end of laser crystal.If profile pump, the solid-state material that is mixed with quantum dot is prepared into cylindrical tubular, inner surface should be fitted closely with the cylindrical outer surface of laser crystal, perhaps will be mixed with the inner surface of the solid-state material uniform fold laser condenser of quantum dot.
Advantage of the present invention is: energy utilization efficiency improves.
Description of drawings
Fig. 1 is a kind of structural representation that the present invention adopts the end pumping mode.
Among Fig. 1: 1-material for transformation of wave length, 2-laser chamber mirror, 3-solid laser material, 4-pump light source.
Fig. 2 is a kind of structural representation that the present invention adopts the profile pump mode.
Among Fig. 2: 11-material for transformation of wave length, 22-laser chamber mirror, 33-laser material, 44-pump light source, 55-laser pump cavity.
Fig. 3 is that the present invention is mixed with the emission spectrum of material for transformation of wave length that particle radius is the selenizing chromium quantum dot of 2.1nm.
Fig. 4 is the absorption spectrum of neodymium-doped potassium-gadolinium laser crystal of the present invention.
Fig. 5 is that the present invention is mixed with the absorption spectrum of material for transformation of wave length that particle radius is the selenizing chromium quantum dot of 2.1nm.
Embodiment
The invention will be further described below in conjunction with drawings and Examples:
Embodiment 1:
With reference to accompanying drawing 1,3,4,5:
Improve the method for efficiency of pump utilization of solid state laser, comprise the steps:
Step 1, preparation is mixed with the material for transformation of wave length of semiconductor-quantum-point, the light of the short wavelength of described material for transformation of wave length absorbing solid laser pump light part also is converted into the light at laser material absworption peak place so that originally not the light in laser material absworption peak scope absorbed by laser material;
Step 2 is placed described material for transformation of wave length, on the path of the placement location of described material for transformation of wave length before exciting light is transferred to described solid laser material between described solid laser material and pump light source.
Described step 1 adopts fusion method directly to produce quantum dot in silicate glass or borate glass; Rationally control preparation condition, so that the quantum dot that produces has suitable size, described quantum dot emission peak is in the absworption peak place of solid laser material, described quantum dot will be the light that is in the quantum dot absorption spectrum, be converted into the light that can be absorbed by solid laser material, thereby provide pump energy for solid laser material.
Perhaps, described step 1 comprises:
(1) adopt chemical method to produce the quantum dot that is scattered in colloid, rationally control preparation condition, so that the quantum dot that produces has suitable size, described quantum dot emission peak is in the absworption peak place of solid laser material, described quantum dot will be the light that is in the quantum dot absorption spectrum, be converted into the light that can be absorbed by solid laser material, thereby provide pump energy for solid laser material;
(2) again these quantum dots are mixed the transparent optical host material and mix, make the solid-state material that is mixed with quantum dot.
Described solid laser material is the doped yttrium aluminum garnet class, mixes and fluoridize lithium fluoride like, doped yttrium vanadate or doping potassium-gadolinium class; The host material of described material for transformation of wave length is silica glass, silicate glass, fluoride glass, optics ultraviolet glue, PMMA or PS; Institute's doped quantum dot is in the described material for transformation of wave length: the CdSe-ZnSe of CdSe or CdS or nucleocapsid structure or CdSe-ZnS or CdS-ZnS; The lateral size of dots of mixing in the described material for transformation of wave length is at 1~10nm.
Adopt the efficient solid laser pump of method of the present invention, comprise solid laser material 3 and pump light source 4, between described solid laser material 3 and pump light source 4, place a kind of material for transformation of wave length 1 that is mixed with semiconductor-quantum-point, the light of the short wavelength of described material for transformation of wave length 1 absorptive pumping light source 4 part also is converted into the light at described solid laser material 3 absworption peak places, being placed on the path before exciting light is transferred to described solid laser material 3 of described material for transformation of wave length 1.
The laser pumping mode is end pumping, and the shape of material for transformation of wave length 1 is sheet.Described pump light source 4 can be one of xenon lamp, bromine tungsten filament lamp, krypton lamp or sunlight, or its combination.
Make a solid laser material 3 according to Fig. 1 and be the solid state laser of neodymium-doped potassium-gadolinium, adopt the mode of end pumping, pump light source 4 can be xenon lamp, bromine tungsten filament lamp, krypton lamp or sunlight, exciting light imports from the left side of laser crystal, and the chamber mirror 2 in process material for transformation of wave length 1 and left side shines on the solid laser material 3.Be mixed with the spectrum (Fig. 3) of emission peak of material for transformation of wave length 1 of selenizing chromium quantum dot at 598nm, the spectral width of emission peak is approximately 25nm, the absworption peak (Fig. 4) of contrast neodymium-doped potassium-gadolinium can find out that the emission peak of material for transformation of wave length 1 and the absworption peak of neodymium-doped potassium-gadolinium coincide better.Absorption spectrum (Fig. 5) by the material for transformation of wave length 1 that is mixed with selenizing chromium quantum dot can be found out, 1 pair of wavelength of the material for transformation of wave length of selenizing chromium quantum dot has good absorption characteristic less than the light of 598nm, material for transformation of wave length 1 arrives the 598nm place with the power conversion of this part light, so that wavelength can absorb by the solid laser material 3 of neodymium-doped potassium-gadolinium less than the energy of the part light of 598nm, thereby improve pumping efficiency.
Embodiment 2:
With reference to accompanying drawing 2,3,4,5:
The difference of present embodiment and embodiment one is that the laser pumping mode changes at the profile pump by laser pump cavity 5, and the shape of material for transformation of wave length 11 is the tubulars with laser pump cavity 5 similar shapes.
Make a laser material 33 according to Fig. 2 and be the solid state laser of neodymium-doped potassium-gadolinium, adopt the mode of profile pump, pump light source 44 can be xenon lamp, bromine tungsten filament lamp or krypton lamp, exciting light covers material for transformation of wave length 11 through the side of laser pump cavity 55 importing laser crystals 33 at the inner surface of laser pump cavity 55 or the side of laser crystal 33.
Other explanation of present embodiment is such as the explanation of embodiment 1.

Claims (6)

1. improve the method for efficiency of pump utilization of solid state laser, comprise the steps:
Step 1, preparation is mixed with the material for transformation of wave length of semiconductor-quantum-point, the light of the short wavelength of described material for transformation of wave length absorbing solid laser pump light part also is converted into the light at laser material absworption peak place so that originally not the light in laser material absworption peak scope absorbed by laser material;
Step 2 is placed described material for transformation of wave length, on the path of the placement location of described material for transformation of wave length before exciting light is transferred to solid laser material between solid laser material and pump light source.
2. a kind of method that improves efficiency of pump utilization of solid state laser as claimed in claim 1, it is characterized in that: described step 1 adopts fusion method directly to produce quantum dot in silicate glass or borate glass, rationally control preparation condition, so that the quantum dot that produces has suitable size, described quantum dot emission peak is in the absworption peak place of solid laser material, described quantum dot will be the light that is in the quantum dot absorption spectrum, be converted into the light that can be absorbed by solid laser material, thereby provide pump energy for solid laser material.
3. a kind of method that improves efficiency of pump utilization of solid state laser as claimed in claim 1, it is characterized in that: described step 1 comprises:
(1) adopt chemical method to produce the quantum dot that is scattered in colloid, rationally control preparation condition, so that the quantum dot that produces has suitable size, described quantum dot emission peak is in the absworption peak place of solid laser material, described quantum dot will be the light that is in the quantum dot absorption spectrum, be converted into the light that can be absorbed by solid laser material, thereby provide pump energy for solid laser material;
(2) again these quantum dots are mixed the transparent optical host material and mix, make the solid-state material that is mixed with quantum dot.
4. a kind of method that improves efficiency of pump utilization of solid state laser as claimed in claim 3 is characterized in that: solid laser material is the doped yttrium aluminum garnet class, mixes and fluoridize lithium fluoride like, doped yttrium vanadate or doping potassium-gadolinium class; The host material of described material for transformation of wave length is silica glass, silicate glass, fluoride glass, optics ultraviolet glue, PMMA or PS; Institute's doped quantum dot is in the described material for transformation of wave length: the CdSe-ZnSe of CdSe or CdS or nucleocapsid structure or CdSe-ZnS or CdS-ZnS; The lateral size of dots of mixing in the described material for transformation of wave length is at 1~10nm.
5. adopt the efficient solid laser pump of method claimed in claim 1, comprise solid laser material and pump light source, it is characterized in that: between solid laser material and pump light source, place a kind of material for transformation of wave length that is mixed with semiconductor-quantum-point, the light of the short wavelength of described material for transformation of wave length absorptive pumping light source part also is converted into the light at solid laser material absworption peak place, on the path of the placement location of described material for transformation of wave length before exciting light is transferred to solid laser material.
6. efficient solid laser pump as claimed in claim 5, it is characterized in that: described pump light source can be one of xenon lamp, bromine tungsten filament lamp, krypton lamp or sunlight, or its combination.
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CN103500914A (en) * 2013-09-02 2014-01-08 长春理工大学 Sunlight pump laser
CN104441849B (en) * 2014-11-14 2016-05-11 中国科学院上海光学精密机械研究所 Transient metal doped zinc sulphide or zinc selenide slab guide material and preparation method
CN112636150A (en) * 2020-12-21 2021-04-09 中国科学院上海光学精密机械研究所 Laser amplifier based on light conversion partition plate glass
CN112652517A (en) * 2020-12-21 2021-04-13 中国科学院上海光学精密机械研究所 Light-enhanced xenon lamp pumping laser amplifier and preparation method thereof
CN112652942A (en) * 2020-12-21 2021-04-13 中国科学院上海光学精密机械研究所 Laser amplifier based on wavelength-adjustable partition plate glass

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US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
CN201266596Y (en) * 2008-08-11 2009-07-01 筑光光电股份有限公司 Lamp piece with high color development
KR100982991B1 (en) * 2008-09-03 2010-09-17 삼성엘이디 주식회사 Quantum dot-wavelength conversion device, preparing method of the same and light-emitting device comprising the same
CN101787271A (en) * 2009-01-23 2010-07-28 E.I.内穆尔杜邦公司 Quantum dot optical wavelength converting layer for solar cell

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