CN112652517A - Light-enhanced xenon lamp pumping laser amplifier and preparation method thereof - Google Patents
Light-enhanced xenon lamp pumping laser amplifier and preparation method thereof Download PDFInfo
- Publication number
- CN112652517A CN112652517A CN202011518425.3A CN202011518425A CN112652517A CN 112652517 A CN112652517 A CN 112652517A CN 202011518425 A CN202011518425 A CN 202011518425A CN 112652517 A CN112652517 A CN 112652517A
- Authority
- CN
- China
- Prior art keywords
- xenon lamp
- laser amplifier
- light
- conversion film
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052724 xenon Inorganic materials 0.000 title claims abstract description 72
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000005086 pumping Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000001228 spectrum Methods 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 28
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 238000000889 atomisation Methods 0.000 claims description 16
- 239000007921 spray Substances 0.000 claims description 14
- 239000002033 PVDF binder Substances 0.000 claims description 12
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 12
- 239000002096 quantum dot Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- -1 InN Chemical compound 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 239000002070 nanowire Substances 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910004262 HgTe Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- 229910005642 SnTe Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims description 2
- 125000003739 carbamimidoyl group Chemical group C(N)(=N)* 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052956 cinnabar Inorganic materials 0.000 claims description 2
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 claims description 2
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 claims description 2
- 125000002795 guanidino group Chemical group C(N)(=N)N* 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 claims description 2
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 239000002073 nanorod Substances 0.000 claims description 2
- 239000002135 nanosheet Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052950 sphalerite Inorganic materials 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 2
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000005357 flat glass Substances 0.000 abstract description 8
- 238000005192 partition Methods 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 description 14
- 229910052779 Neodymium Inorganic materials 0.000 description 12
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 12
- 238000012360 testing method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000005365 phosphate glass Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/38—Devices for influencing the colour or wavelength of the light
- H01J61/42—Devices for influencing the colour or wavelength of the light by transforming the wavelength of the light by luminescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/205—Applying optical coatings or shielding coatings to the vessel of flat panel displays, e.g. applying filter layers, electromagnetic interference shielding layers, anti-reflection coatings or anti-glare coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/092—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
Abstract
The invention discloses a light-enhanced xenon lamp pumping laser amplifier and a preparation method thereof, wherein the laser amplifier consists of a xenon lamp pumping source, partition plate glass and a gain medium, wherein a layer of light conversion film is attached to the surface of a xenon lamp lampshade, and the film can absorb xenon lamp spectra in specific wave bands and convert the xenon lamp spectra into wavelengths which can be absorbed by the gain medium of the laser amplifier, so that the utilization rate of the xenon lamp light source and the working efficiency of the laser amplifier are improved. The invention can effectively absorb the high-energy particles at the initial stage of emission of the high-energy particles, can prevent the high-energy particles from colliding in the cavity of the laser amplifier, effectively regulates and controls the internal temperature of the cavity and improves the working efficiency of the amplifier; and the material source is wide, the preparation cost is low, and the economic effect is larger.
Description
Technical Field
The invention belongs to the field of laser amplifiers, and particularly relates to a light-enhanced xenon lamp pumping laser amplifier.
Background
The laser driving technology of the high-power solid laser is rapidly developed under the excitation of the laser inertial confinement fusion technology. Over 30 years, significant units and laboratories in many countries of the world have conducted extensive research on ultra-high power laser drivers of various sizes and levels. Xenon-pumped large-caliber neodymium glass laser systems have been a great development from the Janus laser systems in the middle of the 70 s of the last century to the current national ignition devices.
The xenon lamp pumping laser amplifier mainly comprises a xenon lamp light source, partition plate glass and a gain medium, and has the function of amplifying high-quality low-energy laser at an input end to required high energy. However, there are still many problems to be overcome in the xenon lamp pumped laser at present: firstly, the traditional xenon lamp pumping laser has low overall efficiency and is an inherent single-shot device, and the target shooting at each time needs hours to eliminate the thermal distortion, so that the necessary requirements of an inertial fusion power station on the aspects of technology and economy can not be met; secondly, the emission spectrum range of the xenon lamp is 190-1100 nm, the traditional gain medium only has peak absorption to specific wavelength, most of the energy of the xenon lamp is forced to be converted into heat energy, the working efficiency of the laser amplifier is greatly limited, and a system is damaged to a certain extent. Therefore, the development of a spectrum-adjustable xenon lamp is very important for improving the working efficiency of the laser amplifier.
Disclosure of Invention
The invention aims to solve the problems that: how to improve the work efficiency of the xenon lamp pumping source, increase the pumping energy under the condition of ensuring the reliable and stable operation of the xenon lamp pumping, and increase the spectrum intensity of a specific waveband, so as to achieve the purposes of accurately adjusting the light-emitting spectrum of the xenon lamp light source, improving the utilization efficiency of the xenon lamp spectrum by the gain medium, reducing the heat radiation and finally improving the work efficiency of the laser amplifier.
In order to solve the problems, the technical scheme of the invention is as follows:
the utility model provides a light enhancement xenon lamp pumping laser amplifier, comprises xenon lamp pumping source, baffle glass and gain medium, its characterized in that: and a light conversion film is arranged outside the xenon lamp pumping source lamp shade and is used for absorbing the spectrum of the xenon lamp with a specific waveband and converting the spectrum into the wavelength which can be absorbed by the gain medium.
Preferably, the thickness of the light conversion film is 1 to 50 nm.
Preferably, the light converting thin film lamp shade material comprises one or more of perovskite, II-VI semiconductor, IV-VI semiconductor, III-V semiconductor.
Preferably, the material of the light conversion film lampshade is ABX3The fluorescent light-emitting wavelength of the perovskite semiconductor compound is 400-800 nm; wherein A is CH3NH3 +(methylamino), CH3CH2NH3 +(ethylamino), CH (NH)2)2+(amidino group), C (NH)2)3+(guanidino) Li+、Na+、K+、Rb+、Ag+、Cu+、Cs+In at least one monovalent cation, B is Ge2+、Sn2+、Pb2+、Be2 +、Mg2+、Ca2+、Sr2+、Ba2+、Cu2+、Fe2+、Mn2+、Zn2+At least one divalent metal ion, X is F-、Cl-、Br-、I-、SCN-At least one monovalent anion, the perovskite semiconductor compound having a forbidden band width value of 1.0eV or more and 2.5eV or less.
Preferably, the light conversion thin film lampshade is made of II-VI group semiconductors, IV-VI group semiconductors and III-V group semiconductor materials, and the emission wavelength of the light conversion thin film lampshade is 400-800 nm; wherein the II-VI group semiconductor comprises CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, ZnO, HgTe, and HgS; group IV-VI semiconductors include PbSe, PbS, PbTe, SnSe, SnS, SnTe; group III-V semiconductors include InP, InAs, InSb, InN, GaAs, GaP, GaN.
Preferably, in the light conversion thin film lampshade material, the shapes of perovskite, II-VI semiconductor, IV-VI semiconductor and III-V semiconductor comprise one or more nano structures of quantum dots, nano cubes, nano wires, nano rods and nano sheets.
Preferably, the gain medium comprises yttrium aluminum garnet, gadolinium gallium garnet, glass, vanadate, tungstate or ceramic, the body of the gain medium is doped with active ions, and the active ions are Yb3+、Nd3+、Tm3+Or Ho3+。
A preparation method of a light-enhanced xenon lamp pumped laser amplifier is characterized by comprising the following steps:
firstly, a xenon lamp pumping source lampshade is immersed in polyvinylidene fluoride (PVDF) Dimethylformamide (DMF) solution; secondly, taking out the xenon lamp pumping source lampshade, and atomizing and dispersing the solution containing the light conversion material to the surface of the xenon lamp lampshade by adopting a spray atomization method to form a light conversion film; and finally, placing the xenon lamp shade attached with the light conversion film in a vacuum oven for drying.
Preferably, in the preparation process of the light conversion film lampshade, the concentration of the DMF solution of PVDF is 0.5-10 mg/ml.
Preferably, in the preparation flow of the light conversion film lampshade, a spray atomization device is adopted in the spray atomization process, the diameter of a spray atomization nozzle is 20-60 mu m, nitrogen is adopted for atomization, and the air pressure range is 3-8 MPa.
Preferably, in the preparation process of the light conversion film lampshade, the temperature range of the vacuum oven is 50-80 ℃, and the drying time is 20-60 minutes.
Compared with the prior art, the invention has the advantages that:
firstly, a light conversion film is prepared on a xenon lamp shade, the film can absorb a high-energy band xenon lamp spectrum and convert a specific band spectrum for absorption by a gain medium, so that the energy utilization efficiency of a xenon lamp light source is improved;
the light conversion film lampshade prepared by the invention can effectively absorb high-energy particles at the initial stage of emission of the high-energy particles, can prevent the high-energy particles from colliding in a cavity of a laser amplifier, effectively regulates and controls the internal temperature of the cavity and improves the working efficiency of the amplifier;
the light conversion film lampshade prepared by the invention can be prepared on the surface of the xenon lamp by adopting various wet film-making processes, is matched with xenon lamps with different specifications and shapes, has wide material sources and low preparation cost, and has larger economic effect.
Drawings
FIG. 1 is a schematic structural diagram of a xenon lamp pumped laser amplifier according to the present invention
FIG. 2 is an absorption spectrum and CsPbBr of a neodymium-doped phosphate glassxI3-x(x is more than or equal to 0 and less than or equal to 3) the fluorescence spectrum of the quantum dot.
In the figure, 1-xenon lamp pumping source, 2-optical conversion film, 3-diaphragm glass and 4-gain medium.
The specific implementation mode is as follows:
the invention is further explained below with reference to the drawings and examples.
Example 1: the laser amplifier comprises a xenon lamp pump source, a light conversion film lampshade, partition plate glass and a gain medium, wherein the light conversion film adopts CsPbBrxI3-xThe gain medium of the quantum dot film is neodymium-doped phosphate glass. CsPbBr at a concentration of 5mg/mlxI3-x(x is more than or equal to 0 and less than or equal to 3) the quantum dots are uniformly adhered to a lamp shade after 10mg/ml treatment of xenon PVDF by means of spray atomization (the caliber of a nozzle is 20 mu m, the air pressure is 3MPa), and the thickness of the film is 50 nm. The test result shows that: the emission intensity of the xenon lamp at 584nm is improved by 15%, and the absorption wavelength corresponds to the characteristic absorption of neodymium-doped phosphate glass (neodymium glass).
Example 2: the laser amplifier is structurally composed of a xenon lamp pumping source, a light conversion film lampshade, partition plate glass and a gain medium, wherein the light conversion film adopts a ZnS nanowire film, and the gain medium is neodymium glass. ZnS nanowires (100 nm long and 10nm diameter) with a concentration of 5mg/ml were uniformly attached to a 15mg/ml processed xenon lamp cover of PVDF by spray atomization (nozzle diameter 30 μm, air pressure 5 MPa). The test result shows that: the emission intensity of the xenon lamp at 584nm is improved by 20%, and the absorption wavelength corresponds to the characteristic absorption of the neodymium glass.
Example 3: the laser amplifier is composed of a xenon lamp pump source, a light conversion film lampshade, partition plate glass and a gain medium, wherein the light conversion film adopts a Mn-ZnSe quantum dot film, and the gain medium is neodymium glass. Mn-ZnSe quantum dots with a concentration of 40mg/ml were uniformly attached to the xenon lamp envelope treated with PVDF at 10mg/ml by spray atomization (nozzle diameter 20 μm, gas pressure 3 MPa). The test result shows that: the emission intensity of the xenon lamp at 584nm is improved by 16%, and the absorption wavelength corresponds to the characteristic absorption of the neodymium glass.
Example 4: the laser amplifier comprises a xenon lamp pumping source, a light conversion film lampshade, partition plate glass and a gain medium, wherein the light conversion film adopts in (Zn) P/ZnSe/ZnS quantum dots, and the gain medium is neodymium glass. In (Zn) P/ZnSe/ZnS quantum dots (average diameter 5nm) having a concentration of 15mg/ml were uniformly attached to the xenon lamp envelope treated with PVDF at 5mg/ml by spray atomization (nozzle diameter 30 μm, gas pressure 5 MPa). The test result shows that: the emission intensity of the xenon lamp at 584nm is improved by 25%, and the absorption wavelength corresponds to the characteristic absorption of the neodymium glass.
Example 5: the laser amplifier is structurally composed of a xenon lamp pumping source, a light conversion film lampshade, partition plate glass and a gain medium, wherein the light conversion film adopts a ZnCdSe quantum dot film, and the gain medium is neodymium glass. ZnCdSe quantum dots (average diameter 3nm) with a concentration of 20mg/ml were uniformly attached to a xenon lamp cover treated with PVDF 5mg/ml by means of spray atomization (nozzle diameter 40 μm, gas pressure 5 MPa). . The test result shows that: the emission intensity of the xenon lamp at 584nm is improved by 22%, and the absorption wavelength corresponds to the characteristic absorption of neodymium glass.
Example 6: the laser amplifier is structurally composed of a xenon lamp pumping source, a light conversion film lampshade, partition plate glass and a gain medium, wherein the light conversion film adopts a CdSe quantum dot film, and the gain medium is neodymium glass. CdSe quantum dots (average diameter 5nm) with a concentration of 15mg/ml were uniformly attached to the xenon lamp cover treated with PVDF 8mg/ml by means of spray atomization (nozzle diameter 20 μm, gas pressure 5 MPa). The test result shows that: the emission intensity of the xenon lamp at 584nm is improved by 20%, and the absorption wavelength corresponds to the characteristic absorption of the neodymium glass.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (12)
1. The utility model provides a light enhancement xenon lamp pumping laser amplifier, comprises xenon lamp pumping source, baffle glass and gain medium, its characterized in that: and a light conversion film is arranged outside the xenon lamp pumping source lamp shade and is used for absorbing the spectrum of the xenon lamp with a specific waveband and converting the spectrum into the wavelength which can be absorbed by the gain medium.
2. The optical enhancement xenon lamp pumped laser amplifier according to claim 1, wherein the thickness of the optical conversion film is 1-50 nm.
3. The optically enhanced xenon lamp pumped laser amplifier according to claim 1, wherein the material of the optically converting thin film comprises one or more of perovskite, group II-VI semiconductor, group IV-VI semiconductor, group III-V semiconductor.
4. The light-enhanced xenon lamp pumped laser amplifier according to claim 3, wherein: the material of the light conversion film is ABX3The fluorescent light-emitting wavelength of the perovskite semiconductor compound is 400-800 nm; wherein A is CH3NH3 +(methylamino), CH3CH2NH3 +(ethylamino), CH (NH)2)2+(amidino group), C (NH)2)3+(guanidino) Li+、Na+、K+、Rb+、Ag+、Cu+、Cs+In at least one monovalent cation, B is Ge2+、Sn2+、Pb2+、Be2+、Mg2+、Ca2+、Sr2+、Ba2+、Cu2+、Fe2+、Mn2+、Zn2 +At least one divalent metal ion, X is F-、Cl-、Br-、I-、SCN-At least one monovalent anion, the perovskite semiconductor compound having a forbidden band width value of 1.0eV or more and 2.5eV or less.
5. The light-enhanced xenon lamp pumped laser amplifier according to claim 3, wherein: the light conversion film is made of II-VI group semiconductors, IV-VI group semiconductors and III-V group semiconductor materials, and the emission wavelength of the light conversion film is 400-800 nm; wherein the II-VI group semiconductor comprises CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, ZnO, HgTe, and HgS; group IV-VI semiconductors include PbSe, PbS, PbTe, SnSe, SnS, SnTe; group III-V semiconductors include InP, InAs, InSb, InN, GaAs, GaP, GaN.
6. A laser amplifier according to claim 3, wherein: the light conversion film is made of an MOF material, and the emission wavelength is 400-800 nm; wherein the metal is selected from La3+，Ce3+，Pr3+，Nd3+，Pm3+，Sm3+，Eu3+，Gd3+，Tb3+，Dy3+，Ho3+，Er3+，Tm3+，Yb3+，Lu3+One or more of; the crystal phase may belong to monoclinic system or triclinic system.
7. The light-enhanced xenon lamp pumped laser amplifier according to claim 3, wherein: in the material of the light conversion film, the shapes of perovskite, II-VI group semiconductor, IV-VI group semiconductor and III-V group semiconductor comprise one or more nano structures of quantum dots, nano cubes, nano wires, nano rods and nano sheets.
8. The light-enhanced xenon lamp pumped laser amplifier according to claim 1, wherein: the gain medium comprises yttrium aluminum garnet, gadolinium gallium garnet, glass, vanadate, tungstate or ceramic, the body of the gain medium is doped with active ions, and the active ions are Yb3+、Nd3+、Tm3+Or Ho3+。
9. A preparation method of a light-enhanced xenon lamp pumped laser amplifier is characterized by comprising the following steps: the method comprises the following steps:
firstly, a xenon lamp pumping source lampshade is immersed in polyvinylidene fluoride (PVDF) Dimethylformamide (DMF) solution;
secondly, taking out the xenon lamp pumping source lampshade, and atomizing and dispersing the solution containing the light conversion material to the surface of the xenon lamp lampshade by adopting a spray atomization method to form a light conversion film;
and finally, placing the xenon lamp shade attached with the light conversion film in a vacuum oven for drying.
10. The method for preparing the optical enhancement xenon lamp pumped laser amplifier according to the claim 9, characterized in that: the concentration of the DMF solution of PVDF is 0.5-10 mg/ml.
11. The method for preparing the optical enhancement xenon lamp pumped laser amplifier according to the claim 9, characterized in that: the spray atomization method adopts a spray atomization device, the diameter of a spray atomization nozzle is 20-60 mu m, nitrogen is adopted for atomization, and the air pressure range is 3-8 MPa.
12. The method for preparing the optical enhancement xenon lamp pumped laser amplifier according to the claim 9, characterized in that: the temperature range of the vacuum oven is 50-80 ℃, and the drying time is 20-60 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011518425.3A CN112652517A (en) | 2020-12-21 | 2020-12-21 | Light-enhanced xenon lamp pumping laser amplifier and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011518425.3A CN112652517A (en) | 2020-12-21 | 2020-12-21 | Light-enhanced xenon lamp pumping laser amplifier and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112652517A true CN112652517A (en) | 2021-04-13 |
Family
ID=75358562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011518425.3A Pending CN112652517A (en) | 2020-12-21 | 2020-12-21 | Light-enhanced xenon lamp pumping laser amplifier and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112652517A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116761444A (en) * | 2023-08-22 | 2023-09-15 | 长春理工大学 | MOF (metal oxide film) packaged quantum dot film infrared photoelectric detector and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564398A (en) * | 2004-03-16 | 2005-01-12 | 中国科学院上海光学精密机械研究所 | High average-power solid strip laser having slop heat distortion self corrected |
| CN102368583A (en) * | 2011-11-15 | 2012-03-07 | 浙江工业大学 | Method for improving efficiency of pump utilization of solid state laser and product thereof |
| CN105161964A (en) * | 2015-09-30 | 2015-12-16 | 中国工程物理研究院激光聚变研究中心 | Sheet type laser amplifier |
| CN107238004A (en) * | 2016-03-24 | 2017-10-10 | 中央大学 | Laser-excited white light illumination system |
| CN111342324A (en) * | 2020-02-11 | 2020-06-26 | 中国科学院上海光学精密机械研究所 | Laser with two-sided transparent material attached to straight-through glass plate strip |
-
2020
- 2020-12-21 CN CN202011518425.3A patent/CN112652517A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564398A (en) * | 2004-03-16 | 2005-01-12 | 中国科学院上海光学精密机械研究所 | High average-power solid strip laser having slop heat distortion self corrected |
| CN102368583A (en) * | 2011-11-15 | 2012-03-07 | 浙江工业大学 | Method for improving efficiency of pump utilization of solid state laser and product thereof |
| CN105161964A (en) * | 2015-09-30 | 2015-12-16 | 中国工程物理研究院激光聚变研究中心 | Sheet type laser amplifier |
| CN107238004A (en) * | 2016-03-24 | 2017-10-10 | 中央大学 | Laser-excited white light illumination system |
| CN111342324A (en) * | 2020-02-11 | 2020-06-26 | 中国科学院上海光学精密机械研究所 | Laser with two-sided transparent material attached to straight-through glass plate strip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116761444A (en) * | 2023-08-22 | 2023-09-15 | 长春理工大学 | MOF (metal oxide film) packaged quantum dot film infrared photoelectric detector and preparation method thereof |
| CN116761444B (en) * | 2023-08-22 | 2023-10-20 | 长春理工大学 | MOF (metal oxide film) packaged quantum dot film infrared photoelectric detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sharma et al. | Two-dimensional CdSe-based nanoplatelets: their heterostructures, doping, photophysical properties, and applications | |
| Chung et al. | YAG and CdSe/ZnSe nanoparticles hybrid phosphor for white LED with high color rendering index | |
| DE112013004621T5 (en) | Wavelength conversion composite powder, resin composition containing composite wavelength conversion powder and light emitting device | |
| CN112652942A (en) | Laser amplifier based on wavelength-adjustable partition plate glass | |
| CN111205863A (en) | Method for preparing powdery rare earth-doped inorganic perovskite quantum dots at low temperature in vacuum | |
| CN112652517A (en) | Light-enhanced xenon lamp pumping laser amplifier and preparation method thereof | |
| CN109233801A (en) | Quantum dot of surface modification and preparation method thereof, using with QLED device | |
| CN102154010A (en) | Photo-enhancement photoluminescence material as well as preparation method and application thereof | |
| CN114989810B (en) | Novel trichromatic fluorescent powder based on heavy calcium carbonate and preparation method thereof | |
| CN109233800A (en) | A kind of quantum dot ligand exchange processes and quantum dot ink | |
| Lahariya et al. | Development and advancement of undoped and doped zinc sulfide for phosphor application | |
| CN110129055B (en) | Preparation of CdSeZnS/ZnS/ZnS core/shell quantum dot | |
| WO2019010999A1 (en) | Quantum dot and quantum dot preparation method | |
| Liu et al. | Recent advances of eco-friendly quantum dots light-emitting diodes for display | |
| Yang et al. | Magic sol–gel silica films encapsulating hydrophobic and hydrophilic quantum dots for white-light-emission | |
| CN102368583B (en) | Method for improving efficiency of pump utilization of solid state laser and product thereof | |
| Yao et al. | Recent progress of single-halide perovskite nanocrystals for advanced displays | |
| US3999145A (en) | Optical convertor for laser systems | |
| US9074136B2 (en) | Silicate luminescent materials and preparation methods thereof | |
| Su et al. | Multicolor light emission of GdVO4: Ln3+ nanorods by a single-wavelength excitation | |
| Guo-Zhi et al. | synthesis of water dispersed Cdse/Znse type-II core-shell structure quantum dots | |
| CN202030697U (en) | Light intensified photoluminescence sheet and light intensified luminous diode | |
| Tang et al. | An ion adsorption–diffusion process for preparing YVO4: Eu3+@ SiO2 core–shell nanoparticles with strong luminescence | |
| Zhu et al. | White luminescence of Dy3+ ions doped 12CaO· 7Al2O3 nanopowders under UV light excitation | |
| CN110041931B (en) | Near-infrared fluorescent film, preparation method thereof and near-infrared LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |