CN106784262A - 一种大功率led灯珠的制备方法 - Google Patents

一种大功率led灯珠的制备方法 Download PDF

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CN106784262A
CN106784262A CN201611190438.6A CN201611190438A CN106784262A CN 106784262 A CN106784262 A CN 106784262A CN 201611190438 A CN201611190438 A CN 201611190438A CN 106784262 A CN106784262 A CN 106784262A
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led light
preparation
power led
nano
casting glue
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曹鹏军
刘扬
任岳
方颜颖
刘通
杨盛华
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Chongqing Dingsan Positive Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0075Processes relating to semiconductor body packages relating to heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • Led Device Packages (AREA)

Abstract

本发明公开了一种大功率LED灯珠的制备方法,其步骤为:在LED芯片表面涂覆灌封胶,在灌封胶内掺入纳米荧光粉,纳米荧光粉激发波长与芯片发射波长相匹配,将芯片装置于铝基复合材料基板上,在350mA的恒定电流驱动下,获得150~155lm的发光通量,发光效率达128~133lm/W,显色指数Ra为90~95的白光LED灯珠。本发明与现有技术相比,具有多种优点,比如提高LED出光效率,改善了光色质量。本发明提出了一种大功率LED灯珠的制备方法,使用新型工艺和复合材料,提高散热性能,降低光散射,提高LED出光效率并能有效改善光色质量。

Description

一种大功率LED灯珠的制备方法
技术领域
本发明涉及一种LED灯珠的制备方法,具体涉及一种大功率LED灯珠的制备方法。
背景技术
LED作为第四代电光源,赋有“绿色照明光源”之称,具有体积小、安全低电压、寿命长、光电转换效率高、响应速度快、节能、环保等优良特性,将会逐步取代传统的照明灯具。据有关部门预测到2050年,我国LED产业产值将超过5000亿元。LED产业经过30多年的发展,到目前已经形成了自主生产器件、芯片、外延片的生产封装、产品制造及应用的完整的产业链格局。如果全球都采用LED照明技术,因此消除100亿公吨的二氧化碳排放量。这不仅证明了LED的确能达到省电与节能效益,且可应用于广大的市场。在大功率LED路灯照明方面,目前由于芯片和封装技术成熟度不足等问题。形成了大功率照明器件稳定性差、亮度不够、散热性不理想、成本过高等问题,并一直困扰着照明用大功率LED的生产和市场推广,因此,在世界范围内,大功率LED照明集成光源封装技术的研究已成为热点,各发达国家也将LED照明技术的研究列入了国家研发计划。因此,开发高性能的大功率LED灯珠具有重要的意义。
发明内容
本发明是针对上述技术的不足,提出了一种大功率LED灯珠的制备方法,使用新型工艺和复合材料,提高散热性能,降低光散射,提高LED出光效率并能有效改善光色质量。
本发明通过下述技术方案实现:
一种大功率LED灯珠的制备方法,其步骤为:在LED芯片表面涂覆灌封胶,在灌封胶内掺入纳米荧光粉,纳米荧光粉激发波长与芯片发射波长相匹配,将芯片装置于铝基复合材料基板上,在350mA的恒定电流驱动下,获得150~155lm的发光通量,发光效率达128~133lm/W,显色指数Ra为90~95的白光LED灯珠。所述纳米荧光粉含量逐步增加,色温在5000~20000K范围内变化,所述荧光粉转换效率大于95%,10万小时后光转换效率衰减小于15%。通过在芯片表面涂覆一层折射率相对较高的透明胶层,即为灌封胶,由于该胶层处于芯片和空气之间,从而能有效减少光子在界面的损失,提高了取光效率。此外,LED灌封胶的作用还包括对芯片进行机械保护,应力释放,并作为一种光导结构。因此,要求其透光率高,折射率高,热稳定性好,流动性好,易于喷涂。为提高LED封装的可靠性,还要求灌封胶具有低吸湿性、低应力、耐温环保等特性。所述灌封胶选用硅胶,将折射率提高到1.8以上,降低散射,提高LED出光效率10%~20%。所述铝基复合材料基板将金属材料的高导热性和增强体材料的低热胀性结合,高热导性在170~210w(m·k),与芯片热相匹配。对于小功率LED,发热问题并不严重,即使热阻较高,一般高于100℃/W,采用普通的封装结构即可。而半导体照明用的高亮度白光LED,一般采用大功率LED芯片,其输入功率为1W或更高,芯片面积约为1mm×1mm,因此热流密度高达100W/cm2以上,采用热导率较高的基板材料和合适的封装工艺,以降低封装热阻。所述灌封胶内纳米荧光粉与硅胶重量比为70,在此重量比下,纳米荧光粉在灌封胶内含量为7%,成本与效果比值为最佳。通过不断涂覆灌封胶,纳米荧光粉在灌封胶内含量在15%时稳定,继续涂覆纳米荧光粉,纳米荧光粉含量不再增加。
本发明与现有技术相比,具有如下的优点和有益效果:
1、本发明一种大功率LED灯珠的制备方法,提高LED出光效率;
2、本发明一种大功率LED灯珠的制备方法,改善了光色质量。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,下面结合实施例,对本发明作进一步的详细说明,本发明的示意性实施方式及其说明仅用于解释本发明,并不作为对本发明的限定。
实施例1
本发明一种大功率LED灯珠的制备方法,一种大功率LED灯珠的制备方法,其步骤为:在LED芯片表面涂覆灌封胶,在灌封胶内掺入纳米荧光粉,纳米荧光粉激发波长与芯片发射波长相匹配,常用荧光粉尺寸在1μm以上,折射率大于或等于1.85,而树脂的折射率一般在1.5左右。由于两者间折射率的不匹配,以及荧光粉颗粒尺寸远大于光散射极限,因而在荧光粉颗粒表面存在光散射,降低了出光效率。经过多次实验,得出最佳荧光粉为纳米级荧光粉,荧光粉颗粒直径小于0.04nm时透光率为1.93,成本与效果的比值为最佳。将芯片装置于铝基复合材料基板上,在350mA的恒定电流驱动下,获得150~155lm的发光通量,发光效率达128~133lm/W,显色指数Ra为90~95的白光LED灯珠。所述纳米荧光粉含量逐步增加,色温在5000~20000K范围内变化,所述荧光粉转换效率大于95%,10万小时后光转换效率衰减小于15%。
实施例2
目前常用的灌封胶采用环氧树脂,固化后的环氧树脂具有良好的物理、化学性能,它对金属和非金属材料的表面具有优异的粘接强度,介电性能良好,变定收缩率小,制品尺寸稳定性好,硬度高,柔韧性较好,对碱及大部分溶剂稳定,因而广泛应用于国防、国民经济各部门,作浇注、浸渍、层压料、粘接剂、涂料等用途。并且环氧树脂固化收缩率小。一般为1%~2%。是热固性树脂中固化收缩率最小的品种之一(酚醛树脂为8%~10%;不饱和聚酯树脂为4%~6%;有机硅树脂为4%~8%)。线胀系数也很小,一般为6×10-5/℃。所以固化后体积变化不大,有利于塑型。但是,树脂运用在小功率灯具上还可以,但是用作到大功率的灯具上后,光效、透光率、折射率、热稳定性、流动性均达不到良好效果,吸光率高,折射率低,降低了出光效率,因此需要重新选用新的涂覆在芯片表面的灌封胶。
实施例3
通过在芯片表面涂覆一层折射率相对较高的透明胶层,选用材料为透明硅胶,由于该胶层处于芯片和空气之间,从而能有效减少光子在界面的损失,提高了取光效率。此外,LED灌封胶的作用还包括对芯片进行机械保护,应力释放,并作为一种光导结构。因此,要求其透光率高,折射率高,热稳定性好,流动性好,易于喷涂。为提高LED封装的可靠性,还要求灌封胶具有低吸湿性、低应力、耐温环保等特性。所述灌封胶选用硅胶后,可以将折射率提高到1.8以上,降低散射,提高LED出光效率10%~20%。所述灌封胶内纳米荧光分与硅胶重量比值为70,在此比值下,灌封胶的折射率和透光率与成本的为最优比。
实施例4
所述铝基复合材料基板将金属材料的高导热性和增强体材料的低热胀性结合,高热导性在170~210w(m·k),与芯片热相匹配。对于小功率LED,发热问题并不严重,即使热阻较高(一般高于100℃/W),采用普通的封装结构即可。而半导体照明用的高亮度白光LED,一般采用大功率LED芯片,其输入功率为1W或更高,芯片面积约为1mm×1mm,因此热流密度高达100W/cm2以上,必须采用热导率较高的基板材料和合适的封装工艺,以降低封装热阻。
以上所述的具体实施方式,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施方式而已,并不用于限定本发明的保护范围,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (7)

1.一种大功率LED灯珠的制备方法,其特征在于,在LED芯片表面涂覆灌封胶,在灌封胶内掺入纳米荧光粉,纳米荧光粉激发波长与芯片发射波长相匹配,将芯片装置于基板上,在350mA的恒定电流驱动下,获得150~155lm的发光通量,发光效率达128~133lm/W,显色指数Ra为90~95的白光LED灯珠。
2.根据权利要求1所述的一种大功率LED灯珠的制备方法,其特征在于,所述涂覆灌封胶厚度增加,白光LED灯珠的色温增加。
3.根据权利要求1所述的一种大功率LED灯珠的制备方法,其特征在于,所述涂覆灌封胶厚度逐步增加,灌封胶内纳米荧光粉含量递增至15%后饱和。
4.根据权利要求1所述的一种大功率LED灯珠的制备方法,其特征在于,所述灌封胶材料选用硅胶。
5.根据权利要求1所述的一种大功率LED灯珠的制备方法,其特征在于,所述基板材料选用铝基复合材料。
6.根据权利要求1所述的一种大功率LED灯珠的制备方法,其特征在于,所述纳米荧光粉直径小于200nm。
7.根据权利要求1所述的一种大功率LED灯珠的制备方法,其特征在于,所述灌封胶内纳米荧光粉与硅胶重量比为70。
CN201611190438.6A 2016-12-21 2016-12-21 一种大功率led灯珠的制备方法 Pending CN106784262A (zh)

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US20070223219A1 (en) * 2005-01-10 2007-09-27 Cree, Inc. Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same
CN105431941A (zh) * 2013-08-01 2016-03-23 克利公司 具有带弯曲表面和平坦表面的密封剂的发光二极管封装件

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