CN106784219B - A kind of LED and preparation method thereof - Google Patents
A kind of LED and preparation method thereof Download PDFInfo
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- CN106784219B CN106784219B CN201710053445.XA CN201710053445A CN106784219B CN 106784219 B CN106784219 B CN 106784219B CN 201710053445 A CN201710053445 A CN 201710053445A CN 106784219 B CN106784219 B CN 106784219B
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- 238000002360 preparation method Methods 0.000 title abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 22
- 238000005240 physical vapour deposition Methods 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000407 epitaxy Methods 0.000 abstract description 4
- 238000011010 flushing procedure Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000012010 growth Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002508 compound effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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Abstract
The invention discloses a kind of LED and preparation method thereof, the production method includes: offer substrate；Buffer layer is formed in the substrate surface；N type semiconductor layer is formed away from the side of the substrate in the buffer layer；Multiple quantum well layer is formed away from the side of the buffer layer in the n type semiconductor layer；Electronic barrier layer is formed away from the side of the n type semiconductor layer in the multiple quantum well layer by PVD process, the electronic barrier layer is AlN layers；P type semiconductor layer is formed away from the side of the multiple quantum well layer in the electronic barrier layer.Technical solution of the present invention is after once having extended multiple quantum well layer outside, with the AlN layer of PVD long layer, as electronic barrier layer, then secondary epitaxy growing P-type semiconductor layer again, relatively thin electronic barrier layer can preferably stop electronics flushing effect, luminous efficiency can be effectively improved, while the operating voltage of LED can be reduced, and then reduces power consumption.
Description
Technical field
The present invention relates to technical field of semiconductor device, more specifically, being related to a kind of LED and preparation method thereof.
Background technique
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of semiconducting solid luminescent device, is utilized
Solid semiconductor chip is as luminescent material, when both ends add forward voltage, electronics with can be given off when hole-recombination it is visible
Light.LED is used as indicator light in circuit and electronic instrument, or for forming text or number display.
In traditional LED production method, in order to improve luminous efficiency, stops electronics overflow, generally use Organometallic
Object chemical gaseous phase deposition (Metal-organic Chemical Vapor Deposition, abbreviation MOCVD) technique is closed in volume
One layer of AlGaN or composite construction relevant to AlGaN are formed on sub- well layer (Multiple Quantum Well, abbreviation MQW)
As electronic barrier layer (Electron blocking layer, abbreviation EBL).
In conventional fabrication method, electronic barrier layer is formed by MOCVD technique, pre-reaction is stronger, will lead to electronic blocking
The crystal quality of layer is poor, while in order to improve the effect of electronic barrier layer, electronic barrier layer is often thicker, so as to cause LED
Operating voltage increase, influence luminous efficiency.,.
Summary of the invention
To solve the above-mentioned problems, the present invention is supplied to a kind of LED and preparation method thereof, using physical vapour deposition (PVD)
(Physical Vapor Deposition, abbreviation PVD) technique forms AlN layers and is used as electronic barrier layer, and pre-reaction is less, shape
Good at the uniform orientation of electronic barrier layer, crystal quality is good, can effectively be stopped by the electronic barrier layer of lower thickness
Electronics overflow reduces operating voltage, improves luminous efficiency.
To achieve the goals above, the invention provides the following technical scheme:
A kind of production method of LED, the production method include:
Substrate is provided；
Buffer layer is formed in the substrate surface；
N type semiconductor layer is formed away from the side of the substrate in the buffer layer；
Multiple quantum well layer is formed away from the side of the buffer layer in the n type semiconductor layer；
Electronic barrier layer, institute are formed away from the side of the n type semiconductor layer in the multiple quantum well layer by PVD process
Stating electronic barrier layer is AlN layers；
P type semiconductor layer is formed away from the side of the multiple quantum well layer in the electronic barrier layer.
Preferably, in above-mentioned production method, the thickness range of the electronic barrier layer is 5nm-30nm, including endpoint
Value.
Preferably, in above-mentioned production method, before forming the n type semiconductor layer, further includes:
U-shaped GaN layer is formed on the buffer layer；
Wherein, the n type semiconductor layer is located at the U-shaped GaN layer surface.
Preferably, in above-mentioned production method, the thickness range of the U-shaped GaN layer is 0.5 μm -2 μm, including endpoint value；
The thickness range of the n type semiconductor layer is 1 μm -3 μm, including endpoint value.
Preferably, in above-mentioned production method, the buffer layer, the U-shaped GaN layer, described is grown by MOCVD technique
N type semiconductor layer, the multiple quantum well layer and the p-type GaN.
Preferably, in above-mentioned production method, the multiple quantum well layer includes: at least one layer of barrier layer and at least one layer of trap
Layer；
When with barrier layer described in multilayer and/or in well layer described in multilayer, on the direction perpendicular to the substrate,
The well layer is alternately distributed with the barrier layer.
The present invention also provides a kind of LED, the LED includes:
Substrate；
Positioned at the buffer layer of the substrate surface；
Deviate from the n type semiconductor layer of the one side of substrate positioned at the buffer layer；
Positioned at the n type semiconductor layer away from the multiple quantum well layer of the side of the buffer layer；
Positioned at the multiple quantum well layer away from the electronic barrier layer of the side of the n type semiconductor layer, the electronic blocking
Layer is AlN layers；
Positioned at the electronic barrier layer away from the p type semiconductor layer of the side of the multiple quantum well layer.
Preferably, in above-mentioned LED, the thickness range of the electronic barrier layer is 5nm-30nm, including endpoint value.
Preferably, in above-mentioned LED, further includes: the U-shaped GaN between the buffer layer and the n type semiconductor layer
Layer.
Preferably, in above-mentioned LED, the multiple quantum well layer includes: at least one layer of barrier layer and at least one layer of well layer；
When with barrier layer described in multilayer and/or in well layer described in multilayer, on the direction perpendicular to the substrate,
The well layer is alternately distributed with the barrier layer.
As can be seen from the above description, the LED production method that technical solution of the present invention provides includes: offer substrate；Described
Substrate surface forms buffer layer；N type semiconductor layer is formed away from the side of the substrate in the buffer layer；In the N-type half
Conductor layer forms multiple quantum well layer away from the side of the buffer layer；Deviate from the N in the multiple quantum well layer by PVD process
The side of type semiconductor layer forms electronic barrier layer, and the electronic barrier layer is AlN layers；In the electronic barrier layer away from described
The side of multiple quantum well layer forms p type semiconductor layer.In the production method, after once having extended multiple quantum well layer outside, adopt
The AlN layer that layer is formed with PVD process, as electronic barrier layer, then secondary epitaxy growing P-type semiconductor layer again.PVD
Technique is not necessarily to pre-reaction, can form the preferable electronic barrier layer of uniform orientation, and crystal quality is good, meanwhile, AlN layers as electricity
Sub- barrier layer, potential barrier is higher, can preferably stop electronics flushing effect using relatively thin electronic barrier layer, can effectively improve
Luminous efficiency, and can reduce the operating voltage of LED, and then reduce power consumption.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow diagram of LED production method provided in an embodiment of the present invention；
Fig. 2-Fig. 8 is a kind of section structural schematic diagram of LED production method provided in an embodiment of the present invention；
Fig. 9 is the I-LOP curve and prior art production method of the LED of production method provided in an embodiment of the present invention production
The contrast schematic diagram of the I-LOP curve of the LED of production；
Figure 10 is the I-V curve and prior art production method of the LED of production method provided in an embodiment of the present invention production
The contrast schematic diagram of the I-V curve of the LED of production.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
With reference to Fig. 1, Fig. 1 is a kind of flow diagram of LED production method provided in an embodiment of the present invention, the production method
Include:
Step S11: as shown in Fig. 2, providing substrate 11.
Substrate 11 can select the Sapphire Substrate in the face C.The thickness range of substrate 11 is 600 μm -700 μm, including endpoint
Value.Optimal, the substrate 11 of 650 μ m thicks can be selected to make LED.Using the substrate 11 of above-mentioned thickness range, can make
The LED of production is while guaranteeing mechanical strength, so that the thinner thickness of LED.
Step S12: as shown in figure 3, forming buffer layer 12 on 11 surface of substrate.
Buffer layer 12 can be formed using MOCVD technique.Buffer layer 12 can be AlN.The thickness range of buffer layer 12 can
Think 5 μm -50 μm, including endpoint value.Buffer layer 12 can provide nuclearing centre for the growth of GaN, the sapphire material in the face C
Substrate 11 carries out crystal orientation to nuclearing centre, guarantees the quality of crystal, and then improve the luminous efficiency of LED.
Step S13: as shown in Figure 4 and 5, N-type half is formed away from the side of the substrate 11 in the buffer layer 12
Conductor layer 14.
Before forming n type semiconductor layer 14, as shown in figure 4, the production method further include: formed on the buffer layer 12
U-shaped GaN layer 13.Then, as shown in figure 5, forming n type semiconductor layer 14.The n type semiconductor layer 14 is located at the U-shaped GaN layer
13 surfaces.Wherein, the n type semiconductor layer 14 is the GaN layer of n-type doping, and the U-shaped GaN layer 13 is undoped GaN layer.
Undoped U-shaped GaN layer 13 is used as transition zone, the growth of n type semiconductor layer 14 is assisted, to guarantee N-type semiconductor
The radial quality of layer 14, guarantees the luminous efficiency of LED.U-shaped GaN layer 13 and N-type semiconductor can be formed using MOCVD technique
Layer 14.The thickness range of the U-shaped GaN layer 13 is 0.5 μm -2 μm, including endpoint value.The thickness model of the n type semiconductor layer 14
Enclosing is 1 μm -3 μm, including endpoint value.Using the U-shaped GaN layer 13 of above-mentioned thickness range, thinner thickness, while can be realized preferably
Auxiliary n type semiconductor layer 14 grow effect.
Step S14: as shown in fig. 6, forming Multiple-quantum away from the side of the buffer layer 12 in the n type semiconductor layer 14
Well layer 15.
The multiple quantum well layer 15 includes: at least one layer of barrier layer and at least one layer of well layer.When multiple quantum well layer 15 only has
When having one layer of barrier layer and one layer of well layer, well layer is between barrier layer and n type semiconductor layer 14.When multiple quantum well layer 15 is with more
The layer barrier layer and/or when having in well layer described in multilayer, on the direction perpendicular to the substrate 11, the well layer with it is described
Barrier layer is alternately distributed.
Barrier layer can be the GaN layer of undoped GaN layer Al doping or the GaN for adulterating Al and In simultaneously
Layer.The barrier layer and well layer of multiple quantum well layer 15 can be formed by MOCVD technique.
Optionally, in the embodiment of the present invention, multiple quantum well layer 15 has multilayer well layer and barrier layer, to improve electronics and sky
The recombination rate in cave improves luminous efficiency.15 top layer of multiple quantum well layer is barrier layer.Lowest level can be barrier layer or well layer.Its
In, lowest level is arranged on 14 surface of n type semiconductor layer.
Step S15: as shown in fig. 7, by PVD process in the multiple quantum well layer 15 away from the n type semiconductor layer
Side forms electronic barrier layer 16, and the electronic barrier layer 16 is AlN layers.
Step S16: as shown in figure 8, forming p-type away from the side of the multiple quantum well layer 15 in the electronic barrier layer 16
Semiconductor layer 17.
P type semiconductor layer 17 can be formed by MOCVD technique.Wherein, the p type semiconductor layer 17 is p-type doping
GaN layer.
In the LED of structure shown in Fig. 8, when LED shines, n type semiconductor layer 14 provides electronics, and p type semiconductor layer 17 mentions
For hole, the two, being capable of radiating visible light in 15 compound tense of multiple quantum well layer.
In production method provided in an embodiment of the present invention, in MOCVD device by MOCVD technique 11 surface of substrate according to
After buffer layer 12 described in secondary growth, the U-shaped GaN layer 13, the n type semiconductor layer 14 and the multiple quantum well layer 15,
Electronic barrier layer 16 is formed on 15 surface of multiple quantum well layer by PVD process in PVD equipment, is finally passed through in MOCVD device
MOCVD technique carries out secondary epitaxy, forms p type semiconductor layer 17 on 16 surface of electronic barrier layer.
In production method provided in an embodiment of the present invention, AlN is set between p type semiconductor layer 17 and multiple quantum well layer 15
The electronic barrier layer 16 of layer.AlN layers of potential barrier with higher can effectively stop electronics by the first sidesway of electronic barrier layer 16
Move second side of electronic barrier layer 16, wherein the first side is electronic barrier layer 16 towards the side of n type semiconductor layer 14, the
Two sides are electronic barrier layer 16 towards the side of p type semiconductor layer 17, improve electronics and hole in the compound effect of multiple quantum well layer
Rate, to improve luminous efficiency.
The thickness range that the electronic barrier layer 16 is arranged is 5nm-30nm, including endpoint value.Electronic blocking can be set
Layer is 10nm.Using the electronic barrier layer 16 of thickness range provided in an embodiment of the present invention, can effectively stop electronics by one
Side is moved to second side, while can also guarantee that more hole reaches multiple quantum well layer 15 by electronic barrier layer 16, with electricity
Son is compound, so that LED luminous efficiency with higher.
Conventional fabrication method generally by MOCVD technique grow electronic barrier layer, electronic barrier layer be AlGaN or
AlN or composite construction relevant to AlGaN (such as AlGaN/AlInGaN/AlN/GaN).On the one hand, MOCVD technique exists pre-
Reaction, causes the uniform orientation of electronic barrier layer poor, influences the effect that electronic barrier layer stops electronics overflow.In order to guarantee
Preferable electronic blocking effect, conventional method need to be arranged the electronic barrier layer of larger thickness, will lead to the operating voltage liter of LED
Height increases power consumption.And production method provided in an embodiment of the present invention, AlN layers, which are made, by PVD process is used as electronic barrier layer,
Without pre-reaction, the uniform orientation for making electronic barrier layer is preferable, and potential barrier is higher, real using the electronic barrier layer of lower thickness
Now preferable electronic blocking effect, reduces LED power consumption, and improve the luminous efficiency of LED.
Below with reference to specific product example illustrate production method of the embodiment of the present invention production LED's the utility model has the advantages that
In LED production method provided in an embodiment of the present invention, when forming electronic barrier layer 16 by PVD process, PVD work
Skill parameter setting are as follows: the amount ranges of Ar, N2, O2 are 0sccm-300sccm, including endpoint value, sedimentation time 15s-100s,
Including endpoint value, formed AlN layers with a thickness of 5nm-30nm, including endpoint value.
Electronic barrier layer is grown under PVD process parameter provided in an embodiment of the present invention, and then after formation LED, the hair of LED
The luminous efficiency and work of light efficiency and operating voltage and traditional LED using MOCVD technique production electronic barrier layer
Voltage-contrast experimental example is respectively as shown in Fig. 9 and Figure 10.
With reference to Fig. 9, Fig. 9 is the I-LOP curve and the prior art of the LED of production method provided in an embodiment of the present invention production
The contrast schematic diagram of the I-LOP curve of the LED of production method production.Wherein, curve A is to use system provided in an embodiment of the present invention
Make the I-LOP curve of the LED of method production, curve B is the I-LOP curve of the LED made of prior art production method.
In Fig. 9, horizontal axis indicates that electric current I, unit mA, the longitudinal axis indicate brightness LOP, unit mW.As shown in Figure 9, this hair
The LED for the production method production that bright embodiment provides is compared with the LED that prior art production method makes, in identical work electricity
It flows down, the LED of production method preparation provided in an embodiment of the present invention has biggish brightness.
And by curve in Fig. 9 it is found that in the normal current margin of LED, with the increase of operating current, the present invention
The brightness of the LED for the production method preparation that embodiment provides is beyond the range of the brightness of the LED of prior art production method production
It is bigger.
Therefore, as shown in Figure 9, the LED of production method preparation provided in an embodiment of the present invention has higher luminous efficiency.
With reference to Figure 10, Figure 10 is the I-V curve and the prior art of the LED of production method provided in an embodiment of the present invention production
The contrast schematic diagram of the I-V curve of the LED of production method production.Wherein, curve D is to use production provided in an embodiment of the present invention
The I-V curve of the LED of method production, curve B is the I-VP curve of the LED made of prior art production method.
In Figure 10, horizontal axis indicates that electric current I, unit mA, the longitudinal axis indicate voltage V, unit mV.As shown in Figure 10, this hair
The LED for the production method production that bright embodiment provides is compared with the LED that prior art production method makes, in identical work electricity
It flows down, the LED of production method preparation provided in an embodiment of the present invention needs lesser voltage.
And by curve in Figure 10 it is found that in the normal current margin of LED, with the increase of operating current, this hair
Model of the brightness of the LED for the production method preparation that bright embodiment provides lower than the brightness of the LED of prior art production method production
It encloses bigger.
Therefore, as shown in Figure 10, the LED of production method preparation provided in an embodiment of the present invention has lower work electricity
Pressure, power consumption are smaller.
Based on the above embodiment, another embodiment of the present invention has been also provided to a kind of LED, which uses above-mentioned production side
Method preparation.
The LED structure is as shown in Figure 8, comprising: substrate 11；Buffer layer 12 positioned at 11 surface of substrate；Positioned at described
Buffer layer 12 deviates from the n type semiconductor layer 14 of 11 side of substrate；Deviate from the buffer layer positioned at the n type semiconductor layer 14
The multiple quantum well layer 15 of 12 side；Positioned at the multiple quantum well layer 15 away from the electronics of the side of the n type semiconductor layer 14
Barrier layer 16, the electronic barrier layer 16 are AlN layers；Deviate from the one of the multiple quantum well layer 15 positioned at the electronic barrier layer 16
The p type semiconductor layer 17 of side.
Electronic barrier layer 16 is formed by PVD process.Optionally, the thickness range of the electronic barrier layer 16 is 5nm-
30nm, including endpoint value.As shown in figure 8, the LED further include: between the buffer layer 12 and the n type semiconductor layer 14
U-shaped GaN layer 13.
Substrate 11 can select the Sapphire Substrate in the face C.The thickness range of substrate 11 is 600 μm -700 μm, including endpoint
Value.Optimal, the substrate 11 of 650 μ m thicks can be selected to make LED.Using the substrate 11 of above-mentioned thickness range, can make
The LED of production is while guaranteeing mechanical strength, so that the thinner thickness of LED.
Buffer layer 12 can be AlN.The thickness range of buffer layer 12 can be 5 μm -50 μm, including endpoint value.Buffer layer
12 can provide nuclearing centre for the growth of GaN, and the substrate 11 of the sapphire material in the face C carries out crystal orientation to nuclearing centre,
Guarantee the quality of crystal, and then improves the luminous efficiency of LED.
The thickness range of the U-shaped GaN layer 13 is 0.5 μm -2 μm, including endpoint value.Using the U-shaped of above-mentioned thickness range
GaN layer 13, thinner thickness, while can be realized the effect that preferable auxiliary n type semiconductor layer 14 is grown.The N-type semiconductor
The thickness range of layer 14 is 1 μm -3 μm, including endpoint value.
The multiple quantum well layer 15 includes: at least one layer of barrier layer and at least one layer of well layer；When with barrier layer described in multilayer
And/or when having described in multilayer in well layer, on the direction perpendicular to the substrate 11, the well layer replaces point with the barrier layer
Cloth.When multiple quantum well layer 15 only has one layer of barrier layer and one layer of well layer, well layer be located at barrier layer and n type semiconductor layer 14 it
Between.Barrier layer can be the GaN layer of undoped GaN layer Al doping or the GaN layer for adulterating Al and In simultaneously.It can be with
The barrier layer and well layer of multiple quantum well layer 15 are formed by MOCVD technique.
Barrier layer can be the GaN layer of undoped GaN layer Al doping or the GaN for adulterating Al and In simultaneously
Layer.The barrier layer and well layer of multiple quantum well layer 15 can be formed by MOCVD technique.
As above-mentioned, the buffer layer 12, institute are successively grown on 11 surface of substrate by MOCVD technique in MOCVD device
After stating U-shaped GaN layer 13, the n type semiconductor layer 14 and the multiple quantum well layer 15, existed in PVD equipment by PVD process
15 surface of multiple quantum well layer forms electronic barrier layer 16, finally carries out secondary epitaxy by MOCVD technique in MOCVD device,
P type semiconductor layer 17 is formed on 16 surface of electronic barrier layer.
LED provided in an embodiment of the present invention is used as electronic barrier layer using the AlN layer of PVD process production, and potential barrier is higher,
There can be preferable electronic blocking effect using relatively thin thickness, reduce power consumption, improve the luminous efficiency of LED.And electricity
The uniform orientation on sub- barrier layer is preferable, can be improved electronic blocking effect, improves luminous efficiency.
The beneficial effect comparative experiments example of LED provided in an embodiment of the present invention and tradition LED can refer to above-described embodiment
Description, details are not described herein.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For being made disclosed in embodiment
For method, since it is corresponding with LED disclosed in embodiment, so being described relatively simple, related place makes referring to LED
Embodiment of the method relevant portion explanation.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of production method of LED characterized by comprising
Substrate is provided；
Buffer layer is formed in the substrate surface；
N type semiconductor layer is formed away from the side of the substrate in the buffer layer；
Multiple quantum well layer is formed away from the side of the buffer layer in the n type semiconductor layer；
Electronic barrier layer, the electricity are formed away from the side of the n type semiconductor layer in the multiple quantum well layer by PVD process
Sub- barrier layer is AlN layers；
P type semiconductor layer is formed away from the side of the multiple quantum well layer in the electronic barrier layer；
Wherein, it through PVD process after multiple quantum wells layer surface forms electronic barrier layer, is carried out by MOCVD technique secondary outer
Prolong, forms p type semiconductor layer in electronic blocking layer surface.
2. manufacturing method according to claim 1, which is characterized in that the thickness range of the electronic barrier layer is 5nm-
30nm, including endpoint value.
3. manufacturing method according to claim 1, which is characterized in that before forming the n type semiconductor layer, also wrap
It includes:
U-shaped GaN layer is formed on the buffer layer；
Wherein, the n type semiconductor layer is located at the U-shaped GaN layer surface.
4. production method according to claim 3, which is characterized in that the thickness range of the U-shaped GaN layer is 0.5 μm of -2 μ
M, including endpoint value；
The thickness range of the n type semiconductor layer is 1 μm -3 μm, including endpoint value.
5. production method according to claim 3, which is characterized in that grow the buffer layer, described by MOCVD technique
U-shaped GaN layer, the n type semiconductor layer, the multiple quantum well layer and the p-type GaN.
6. production method according to claim 5, which is characterized in that the multiple quantum well layer includes: at least one layer of barrier layer
And at least one layer of well layer；
It is described on the direction perpendicular to the substrate when with barrier layer described in multilayer and/or in well layer described in multilayer
Well layer is alternately distributed with the barrier layer.
7. a kind of LED prepared using the production method as described in claim any one of 1-6 characterized by comprising
Substrate；
Positioned at the buffer layer of the substrate surface；
Deviate from the n type semiconductor layer of the one side of substrate positioned at the buffer layer；
Positioned at the n type semiconductor layer away from the multiple quantum well layer of the side of the buffer layer；
Positioned at the multiple quantum well layer away from the electronic barrier layer of the side of the n type semiconductor layer, the electronic barrier layer is
AlN layers；
Positioned at the electronic barrier layer away from the p type semiconductor layer of the side of the multiple quantum well layer.
8. LED according to claim 7, which is characterized in that the thickness range of the electronic barrier layer is 5nm-30nm, packet
Include endpoint value.
9. LED according to claim 7, which is characterized in that further include: it is located at the buffer layer and the N-type semiconductor
U-shaped GaN layer between layer.
10. LED according to claim 7, which is characterized in that the multiple quantum well layer include: at least one layer of barrier layer and
At least one layer of well layer；
It is described on the direction perpendicular to the substrate when with barrier layer described in multilayer and/or in well layer described in multilayer
Well layer is alternately distributed with the barrier layer.
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