CN106784114A - 一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池 - Google Patents
一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池 Download PDFInfo
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Abstract
本发明公开了一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池，包括位于上层的NIP非晶硅叠层电池、以及位于下层的PIN异质结硅电池，所述NIP非晶硅叠层电池和PIN异质结硅电池通过非晶硅隧道结串联，在所述PIN异质结硅电池的吸收层晶体硅的上表面设有硅纳米线阵列。本发明通过将硅纳米线阵列引入叠层电池，使电池兼具纳米线阵列的陷光优势和叠层电池的较高的开路电压和短路电流。
Description
技术领域
本发明涉及新型太阳能光伏电池结构领域，具体地说，特别涉及到一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池。
背景技术
目前现有的叠层电池技术多为基于薄膜材料的叠层电池，研究主要其中在多元化合物叠层电池、非晶硅叠层电池和染料敏化叠层电池等。
非晶硅是直接带隙材料，光吸收系数高，1微米厚的非晶硅薄膜就能吸收阳光可见光中的大部分能量。但是非晶硅材料有明显的光致衰减效应，光伏电池效率大幅度衰减。利用叠层电池结构，在非晶硅电池下方串联微晶硅电池，形成a-Si/μc-Si叠层电池结构。目前，a-Si/μc-Si叠层电池最高效率为12.7％，这一效率远低于普通的晶硅电池。目前纳米线光伏电池也一度是研究热点，氧化锌纳米线太阳能电池和硅纳米线阵列电池为主要研究对象。在硅纳米线阵列电池中，硅纳米线阵列一般作为电池的陷光结构出现。
目前研究广泛的非晶硅叠层电池，对非晶硅材料的纯度要求较高，价格贵，光致衰减现象明显，无法在工业中推广。硅纳米线阵列电池中纳米线阵列将使电池表面积激增，同时纳米线制备时，在表面留下大量曲线，因此纳米线电池的表面复合巨大，导致光伏电池的光生电流极其微弱，整个电池效率低下。
发明内容
本发明的目的在于针对现有技术中的不足，提供一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池，将硅纳米线阵列引入叠层电池，使电池兼具纳米线阵列的陷光优势和叠层电池的较高的开路电压和短路电流。
本发明所解决的技术问题可以采用以下技术方案来实现：
一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池，包括位于上层的NIP非晶硅叠层电池、以及位于下层的PIN异质结硅电池，所述NIP非晶硅叠层电池和PIN异质结硅电池通过非晶硅隧道结串联，在所述PIN异质结硅电池的吸收层晶体硅的上表面设有硅纳米线阵列。
进一步的，在所述PIN异质结硅电池的N型非晶硅与P型晶体硅吸收层中间设有有非晶硅薄层，其用于减少硅纳米线阵列表面的表面复合。
进一步的，所述硅纳米线阵列先通过反应离子刻蚀法刻蚀在P型晶体硅吸收层的上表面，然后用HF和HNO3混合液修饰后，并清洗吹干，放入PECVD沉积系统，按顺序逐层沉积本征非晶硅层，N+非晶硅层，P+非晶硅层，本征非晶硅吸收层，P+非晶硅层，ITO透明导电层，最后在电池正背表面沉积金属电极。
与现有技术相比，本发明的有益效果如下：
1、本发明的叠层电池各薄膜层的沉积温度相对较低，避免了高温对材料特性的负面影响。硅纳米阵列的出现使得非晶硅吸收层厚度大大降低，不仅增加了入射光的反射次数，还提高了光生载流子的扩散路程，提高载流子收集率，增大了光生电流。
2、本发明的非晶硅薄膜层，不仅与晶硅构成异质结电池，还为硅纳米线阵列表面提供了良好的低温钝化层，非晶硅中的H原子将硅纳米线阵列表层的悬臂键饱和，从而大大减少了纳米线阵列引入的大量的表面复合。
3、本发明的叠层电池结构使得高能光子被上层电池吸收，提供较高的光生电压；低能光子被下层电池吸收，提供较大的光电流。
附图说明
图1为本发明所述的的薄膜硅晶体硅叠层太阳能光伏电池的结构示意图。
图2为本发明所述的的薄膜硅晶体硅叠层太阳能光伏电池的吸收示意图。
具体实施方式
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体实施方式，进一步阐述本发明。
参见图1和图2，本发明所述的一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池，上层为NIP非晶硅叠层电池，下层为PIN异质结硅电池。硅纳米线阵列位于底层电池吸收层晶体硅上表面。硅纳米线阵列起到陷光作用，增大了光在非晶硅材料中的行程，增加的吸收长度，减小了非晶硅层的实际厚度，从而抑制了光致衰减的出现。
本发明下层电池为NP单结型异质结电池，其中在N型非晶硅与P型晶体硅吸收层中间有一薄层本征非晶硅起到钝化作用。减少硅纳米线阵列表面的表面复合。上下层电池通过P+N+非晶硅隧道结串联在一起。
本发明叠层电池分为上下两个通过隧道结串联在一起的电池。下层电池为NIP型非晶硅/晶体硅异质结电池，上层电池为NIP型非晶硅电池。硅纳米线阵列制备于下层电池的晶体硅片上，制备方法采用基于二氧化硅颗粒自组装掩模的反应离子刻蚀法。
本发明叠层电池在制作时，先利用反应离子刻蚀法将P型晶硅片上表面刻蚀出所需的硅纳米线阵列。用HF和HNO3混合液修饰后，并清洗吹干，即可放入PECVD沉积系统，按顺序逐层沉积本征非晶硅层，N+非晶硅层，P+非晶硅层，本征非晶硅吸收层，P+非晶硅层，ITO透明导电层。最后在电池正背表面沉积金属电极，本发明电池即可制作完成。
本发明中由于纳米线阵列的引入大大减薄的非晶硅本征吸收层的厚度，本征层中的光生载流子只需在本征层中扩散极短的路程即被收集，大大降低了光生载流子的复合几率。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (3)
1.一种基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池，其特征在于：包括位于上层的NIP非晶硅叠层电池、以及位于下层的PIN异质结硅电池，所述NIP非晶硅叠层电池和PIN异质结硅电池通过非晶硅隧道结串联，在所述PIN异质结硅电池的吸收层晶体硅的上表面设有硅纳米线阵列。
2.根据权利要求1所述的基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池，其特征在于：在所述PIN异质结硅电池的N型非晶硅与P型晶体硅吸收层中间设有有非晶硅薄层，其用于减少硅纳米线阵列表面的表面复合。
3.根据权利要求1所述的基于硅纳米线的薄膜硅晶体硅叠层太阳能光伏电池，其特征在于：所述硅纳米线阵列先通过反应离子刻蚀法刻蚀在P型晶体硅吸收层的上表面，然后用HF和HNO3混合液修饰后，并清洗吹干，放入PECVD沉积系统，按顺序逐层沉积本征非晶硅层，N+非晶硅层，P+非晶硅层，本征非晶硅吸收层，P+非晶硅层，ITO透明导电层，最后在电池正背表面沉积金属电极。
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