CN106784074A - N型双面电池结构 - Google Patents
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Abstract
本发明提供一种N型双面电池结构，包括基体，基体为N型，基体的正面为掺硼的发射极，发射极上沉积有第一减反钝化膜，第一减反钝化膜上有正面电极，正面电极穿透第一减反钝化膜与发射极形成欧姆接触；基体的背面生长一层薄膜，即隧穿氧化层，隧穿氧化层上设有掺杂多晶硅层，掺杂多晶硅层上沉积有第二减反钝化膜，第二减反钝化膜上设置有背面电极，背面电极穿透第二减反钝化膜与掺杂多晶硅层形成欧姆接触；该种N型双面电池结构，通过在表面设置隧穿氧化层，在基体和背表面场区域之间形成势垒，阻止了空穴向背场区域的流动，从而大大减少了背场区域和背面金属区域带来的复合。
Description
技术领域
本发明涉及一种N型双面电池结构。
背景技术
目前太阳能电池中使用的硅材料主要有两类，分别为N型硅材料和P型硅材料。其中，N型硅材料与P型硅材料相比，具有以下的优点：N型材料中的杂质对少子空穴的捕获能力低于P型材料中的杂质对少子电子的捕获能力。相同电阻率的N型硅片的少子寿命比P型硅片的高，达到毫秒级。N型硅片对金属污杂的容忍度要高于P型硅片，Fe、Cr、Co、W、Cu、Ni等金属对P型硅片的影响均比N型硅片大。N型硅电池组件在弱光下表现出比常规P型硅组件更优异的发电特性。人们越来越关注少子寿命更高、发展潜力更大的N型电池。
在N型双面电池中制约效率提升的重要因素是背表面及其金属化带来的复合。
上述问题是在太阳能电池的设计与生产过程中应当予以考虑并解决的问题。
发明内容
本发明的目的是提供一种N型双面电池结构，能够大大减少背表面及其电极区域带来的复合，解决现有技术中存在的背表面及其电极区域复合严重，制约N型双面电池效率的问题。
本发明的技术解决方案是：
一种N型双面电池结构，包括基体，基体为N型，基体的正面为掺硼的发射极，发射极上沉积有第一减反钝化膜，第一减反钝化膜上有正面电极，正面电极穿透第一减反钝化膜与发射极形成欧姆接触；基体的背面生长一层薄膜，即隧穿氧化层，隧穿氧化层上设有掺杂多晶硅层，掺杂多晶硅层上沉积有第二减反钝化膜，第二减反钝化膜上设置有背面电极，背面电极穿透第二减反钝化膜与掺杂多晶硅层形成欧姆接触。
进一步地，基体正面的发射极采用三溴化硼BBr3高温扩散，常压气相沉积APCVD法沉积硼硅玻璃BSG退火或离子注入硼源退火形成；第一减反射钝化膜采用SiNx、SiO2、TiO2、Al2O3、SiOxNy薄膜中的一种或者多种，厚度为50-90nm。
进一步地，基体背面生长的隧穿氧化层为SiO2、Al2O3、TiO2或MoOx，厚度为1-4nm。
进一步地，背面生长的隧穿氧化层为SiO2时，隧穿氧化层生长采用热HNO3氧化、热氧化或臭氧水氧化的生长方式，当隧穿氧化层为Al2O3、TiO2或MoOx时，隧穿氧化层生长采用原子层气相沉积或者PVD法。
进一步地，基体背面的掺杂多晶硅层为磷掺杂多晶硅层，基体背面的掺杂多晶硅层生长方式为等离子体辅助气相沉积法PECVD沉积非晶硅退火或者低压化学气相沉积LPCVD沉积多晶硅退火。
进一步地，基体背面的掺杂层多晶硅层采用原位掺杂、扩散掺杂或者离子注入掺杂方式，退火温度为750-1050oC。
进一步地，基体背面的掺杂层多晶硅层厚度为40nm-300nm，方阻为20-200Ω/□。
进一步地, 基体背面的第二减反射钝化膜是SiNx、SiO2、TiO2、Al2O3或SiOxNy薄膜中的一种或者多种，厚度为50-90nm。
进一步地，正面电极与背面电极分别采用丝网印刷、电镀、化学镀或物理气相沉积PVD方式形成，正面电极与背面电极分别为Ni、Cu、Ag、Cr、Ti、Pd中的一种或两种以上的组合。
本发明的有益效果是：该种N型双面电池结构，通过在表面设置隧穿氧化层，在基体和背表面场区域之间形成势垒，阻止了空穴向背场区域的流动，从而大大减少了背场及其电极区域带来的复合。
附图说明
图1是本发明实施例N型双面电池结构的示意图；
其中：1-基体，2-发射极，3-第一减反钝化膜，4-正面电极，5-隧穿氧化层，6-掺杂多晶硅层，7-第二减反钝化膜，8-背面电极。
具体实施方式
下面结合附图详细说明本发明的优选实施例。
实施例
一种N型双面电池结构，如图1 所示，包括基体1，基体1为N型，基体1的正面为掺硼的发射极2，发射极2上沉积有第一减反钝化膜3，第一减反钝化膜3上有正面电极4，正面电极4穿透第一减反钝化膜3与发射极2形成欧姆接触；基体1的背面生长一层薄膜，即隧穿氧化层5，隧穿氧化层5上设有掺杂多晶硅层6，掺杂多晶硅层6上沉积有第二减反钝化膜7，第二减反钝化膜7上设置有背面电极8，背面电极8穿透第二减反钝化膜7与掺杂多晶硅层6形成欧姆接触。
该种N型双面电池结构，通过在表面设置隧穿氧化层5，在基体1和背表面场区域之间形成势垒，阻止了空穴向背场区域的流动，从而大大减少了背场及电极区域带来的复合。
基体1正面的发射极2采用BBr3高温扩散，APCVD法沉积BSG退火，或者离子注入B源退火形成；第一减反射钝化膜采用SiNx、SiO2、TiO2、Al2O3、SiOxNy薄膜中的一种或者多种，厚度为50-90nm。基体1背面的第二减反钝化膜7是SiNx、SiO2、TiO2、Al2O3或SiOxNy薄膜中的一种或者多种，厚度为50-90nm。
基体1背面生长的隧穿氧化层5为SiO2、Al2O3、TiO2或MoOx，厚度为1-4nm。背面生长的隧穿氧化层5为SiO2时，隧穿氧化层5生长采用热HNO3氧化、热氧化或臭氧水氧化的生长方式，当隧穿氧化层5为Al2O3、TiO2或MoOx时，隧穿氧化层5生长采用原子层气相沉积或者PVD法。
基体1背面的掺杂多晶硅层6为磷掺杂多晶硅层6，基体1背面的掺杂多晶硅层6生长方式为PECVD法沉积非晶硅退火或者LPCVD沉积多晶硅退火。基体1背面的掺杂层多晶硅层采用原位掺杂、扩散掺杂或者离子注入掺杂方式，退火温度为750-1050oC。基体1背面的掺杂层多晶硅层厚度为40nm-300nm，方阻为20-200Ω/□。
正面电极4与背面电极分别采用丝网印刷、电镀、化学镀或PVD方式形成，正面电极4与背面电极分别为Ni、Cu、Ag、Cr、Ti、Pd中的一种或两种以上的组合。
具体示例一，如图1 所示，基体1为N型，基体1正表面为BBr3扩散形成的发射极2，方阻为65Ω/sq。正表面沉积Al2O3和SiNx膜作为第一减反钝化膜3，厚度为75nm。背表面臭氧水氧化形成1.5nm厚的SiO2薄膜，采用PECVD法沉积磷掺杂的非晶硅，然后高温退火形成掺杂多晶硅层6，厚度为100nm，退火温度为800oC。背表面沉积SiNx膜作为第二减反钝化膜7，厚度为80nm。双面丝网印刷电极，经过高温烧结，分别与基体1的正面和背面形成欧姆接触。
具体示例二，基体1为N型，正表面为APCVD沉积BSG退火形成的发射极2，方阻为85Ω/sq。正表面热生长SiO2，沉积SiNx膜作为第一减反钝化膜3，厚度为80nm，背表面原子气相沉积形成2 nm厚的TiO2薄膜，采用LPCVD法沉积磷掺杂的多晶硅，厚度为150nm， 900oC退火，背表面沉积Al2O3和SiNx膜作为第二减反钝化膜7，厚度为70nm。双面通过激光对钝化减反射膜开孔，然后电镀Ni、Cu、Ag作为电极，经过低温烧结，与正面发射极2和背面背表面场形成欧姆接触。
Claims (9)
1.一种N型双面电池结构，其特征在于：包括基体，基体为N型，基体的正面为掺硼的发射极，发射极上沉积有第一减反钝化膜，第一减反钝化膜上有正面电极，正面电极穿透第一减反钝化膜与发射极形成欧姆接触；基体的背面生长一层薄膜，即隧穿氧化层，隧穿氧化层上设有掺杂多晶硅层，掺杂多晶硅层上沉积有第二减反钝化膜，第二减反钝化膜上设置有背面电极，背面电极穿透第二减反钝化膜与掺杂多晶硅层形成欧姆接触。
2.如权利要求1所述的N型双面电池结构，其特征在于：基体正面的发射极采用BBr3高温扩散，常压气相沉积APCVD法沉积硼硅玻璃BSG退火或离子注入硼源退火形成；第一减反射钝化膜采用SiNx、SiO2、TiO2、Al2O3、SiOxNy薄膜中的一种或者多种，厚度为50-90nm。
3.如权利要求1所述的N型双面电池结构，其特征在于：基体背面生长的隧穿氧化层为SiO2、Al2O3、TiO2或MoOx，厚度为1-4nm。
4.如权利要求3所述的N型双面电池结构，其特征在于：背面生长的隧穿氧化层为SiO2时，隧穿氧化层生长采用热HNO3氧化、热氧化或臭氧水氧化的生长方式，当隧穿氧化层为Al2O3、TiO2或MoOx时，隧穿氧化层生长采用原子层气相沉积或者物理气相沉积PVD。
5.如权利要求1-4任一项所述的N型双面电池结构，其特征在于：基体背面的掺杂多晶硅层为磷掺杂多晶硅层，基体背面的掺杂多晶硅层生长方式为等离子体辅助气相沉积PECVD沉积非晶硅退火或者低压化学气相沉积LPCVD沉积多晶硅退火。
6.如权利要求5所述的N型双面电池结构，其特征在于：基体背面的掺杂层多晶硅层采用原位掺杂、扩散掺杂或者离子注入掺杂方式，退火温度为750-1050oC。
7.如权利要求6所述的N型双面电池结构，其特征在于：基体背面的掺杂层多晶硅层厚度为40nm-300nm，方阻为20-200Ω/□。
8.如权利要求1-4任一项所述的N型双面电池结构，其特征在于：基体背面的第二减反射钝化膜是SiNx、SiO2、TiO2、Al2O3或SiOxNy薄膜中的一种或者多种，厚度为50-90nm。
9.如权利要求1-4任一项所述的N型双面电池结构，其特征在于：正面电极与背面电极分别采用丝网印刷、电镀、化学镀或物理气相沉积PVD方式形成，正面电极与背面电极分别为Ni、Cu、Ag、Cr、Ti、Pd中的一种或两种以上的组合。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389914A (zh) * | 2018-03-09 | 2018-08-10 | 中国科学院宁波材料技术与工程研究所 | 一种钝化隧穿层材料制备及其在太阳电池的应用 |
| CN109301030A (zh) * | 2018-09-07 | 2019-02-01 | 江苏顺风光电科技有限公司 | 一种低成本n型双面电池制备方法 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413838A (zh) * | 2013-07-23 | 2013-11-27 | 新奥光伏能源有限公司 | 一种晶体硅太阳电池及其制备方法 |
| CN105762234A (zh) * | 2016-04-27 | 2016-07-13 | 中国科学院宁波材料技术与工程研究所 | 一种隧穿氧化层钝化接触太阳能电池及其制备方法 |
| CN105895738A (zh) * | 2016-04-26 | 2016-08-24 | 泰州中来光电科技有限公司 | 一种钝化接触n型太阳能电池及制备方法和组件、系统 |
-
2017
- 2017-01-24 CN CN201710054760.4A patent/CN106784074A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413838A (zh) * | 2013-07-23 | 2013-11-27 | 新奥光伏能源有限公司 | 一种晶体硅太阳电池及其制备方法 |
| CN105895738A (zh) * | 2016-04-26 | 2016-08-24 | 泰州中来光电科技有限公司 | 一种钝化接触n型太阳能电池及制备方法和组件、系统 |
| CN105762234A (zh) * | 2016-04-27 | 2016-07-13 | 中国科学院宁波材料技术与工程研究所 | 一种隧穿氧化层钝化接触太阳能电池及其制备方法 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389914A (zh) * | 2018-03-09 | 2018-08-10 | 中国科学院宁波材料技术与工程研究所 | 一种钝化隧穿层材料制备及其在太阳电池的应用 |
| CN110718607A (zh) * | 2018-07-13 | 2020-01-21 | 上海凯世通半导体股份有限公司 | N型太阳能电池的制作方法 |
| CN109301030A (zh) * | 2018-09-07 | 2019-02-01 | 江苏顺风光电科技有限公司 | 一种低成本n型双面电池制备方法 |
| CN109671790A (zh) * | 2018-12-25 | 2019-04-23 | 浙江晶科能源有限公司 | 一种n型双面太阳能电池及其制备方法 |
| CN109802007A (zh) * | 2019-01-02 | 2019-05-24 | 中国科学院宁波材料技术与工程研究所 | 管式pecvd制备多晶硅钝化接触结构的方法 |
| CN110289333A (zh) * | 2019-07-10 | 2019-09-27 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳电池、生产方法及光伏组件 |
| CN110289333B (zh) * | 2019-07-10 | 2022-02-08 | 江苏隆基乐叶光伏科技有限公司 | 一种太阳电池、生产方法及光伏组件 |
| WO2021037846A1 (fr) * | 2019-08-29 | 2021-03-04 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de fabrication d'une cellule photovoltaïque |
| FR3100381A1 (fr) * | 2019-08-29 | 2021-03-05 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de fabrication d’une cellule photovoltaïque |
| CN111416017A (zh) * | 2020-03-26 | 2020-07-14 | 泰州中来光电科技有限公司 | 一种钝化接触太阳电池制备方法 |
| CN111416017B (zh) * | 2020-03-26 | 2023-03-24 | 泰州中来光电科技有限公司 | 一种钝化接触太阳电池制备方法 |
| WO2023213024A1 (zh) * | 2022-05-06 | 2023-11-09 | 中国科学院宁波材料技术与工程研究所 | 一种TOPCon电池的电极结构及其制备方法和应用 |
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