CN106784025A - A kind of the high frequency silicon Schotty diode structure and preparation method of standard CMOS process manufacture - Google Patents
A kind of the high frequency silicon Schotty diode structure and preparation method of standard CMOS process manufacture Download PDFInfo
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- CN106784025A CN106784025A CN201710125150.9A CN201710125150A CN106784025A CN 106784025 A CN106784025 A CN 106784025A CN 201710125150 A CN201710125150 A CN 201710125150A CN 106784025 A CN106784025 A CN 106784025A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000008569 process Effects 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000012467 final product Substances 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000012545 processing Methods 0.000 abstract description 9
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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Abstract
The invention discloses the high frequency silicon Schotty diode structure and preparation method of a kind of manufacture of standard CMOS process, the present invention includes p-type chip substrate, it is arranged at P+ doped regions and N well regions in p-type chip substrate, it is arranged at the N+ doped regions of N well regions, it is arranged at the oxide layer of p-type chip substrate side, and is arranged at diode anode in oxide layer, diode cathode and underlayer electrode.Silicon Schotty diode of the invention uses anode and cathode interdigital structure, diode series resistance can be effectively reduced, chip back is carried out simultaneously thinning, reduce parasitic capacitance, its high frequency performance is improved, it can be using the CMOS technology processing procedure of existing standard, as long as slightly operation adjustment can be manufactured, on the premise of radio circuit application requirement is met, diode cost can be greatly reduced.
Description
Technical field
The invention belongs to microelectronics technology, and in particular to a kind of high frequency silicon Schotty two of standard CMOS process manufacture
Pole pipe structure and preparation method.
Background technology
With the development and the progress of technology of society, microwave-radio technology is increasingly deep into our life production,
Such as Internet of Things, high-speed communication etc..In microwave radio circuit engineering, Schottky diode compared to more other diodes due to
With more preferable high frequency characteristics, therefore it is used frequently as the detection component of the reception in radio circuit.
Current Schottky diode forms metal-semicroductor barrier and contacts frequently with metal and semiconductor, and in order to reach
To quick response speed, the radio frequency loss of radio circuit is reduced, typically all using metal and the N-type with high mobility half
Conductor contact for producing schottky diode.Such as Titanium and N-type GaAs contact for producing radio frequency Schottky diode, this be because
For GaAs has electron mobility higher than silicon, the smaller Schottky diode of series resistance can be produced, for penetrating
The radio frequency loss that frequency circuit brings is smaller, and it is no any problem that this is applied in scientific research or small lot application, but is worked as
Radio-frequency technique is more and more ripe, when in high volume being manufactured, would have to consider the cost-performance ratio of component.Although making
The Schottky diode made of the semiconductor (such as GaAs, indium phosphide etc.) of III-V high mobility has more preferable high frequency
Performance, but relative to wide variety of silicon materials and technique in integrated circuit, its cost is far above and uses silicon materials and silicon work
The Schottky diode that skill makes.So if being directed to silicon materials and process characteristic, silicon Xiao that can meet application demand is developed
Special based diode is used for the microwave radio circuit produced in enormous quantities, and cost will be greatly reduced, and brings considerable economy
Benefit.
The content of the invention
In order to improve above mentioned problem, the invention provides a kind of high frequency silicon Schotty diode of standard CMOS process manufacture
Structure and preparation method.The Schottky diode structure and preparation method can directly use present wide variety of standard CMOS
Manufacturing process, it is only necessary to somewhat adjust process flow in its manufacturing process, you can meet and require.Designed by device and made
Checking, the silicon Schotty diode cut-off frequency made using this structure and technique is more than 200GHz, therefore is entirely capable of meeting Ka
Wave band (＜ 35GHz) radio circuit application below.Because the silicon CMOS technology line of standard, its material and wafer area can be used
Advantage in terms of size, silicon Schotty diode cost is substantially reduced.
To achieve these goals, the technical solution adopted by the present invention is as follows：
A kind of high frequency silicon Schotty diode structure of standard CMOS process manufacture, including p-type chip substrate, are arranged at P
P+ doped regions and N well regions on cake core substrate, are arranged at the N+ doped regions of N well regions, are arranged at the oxygen of p-type chip substrate side
Change layer, and be arranged at diode anode in oxide layer, diode cathode and underlayer electrode.
Further, the diode anode is by metal and N well region directly contacts.
Yet further, the frequency of the high frequency silicon Schotty diode structure is more than 200GHz.
Further, the diode anode and the interdigital setting of diode cathode.
A kind of preparation method of the high frequency silicon Schotty diode structure of standard CMOS process manufacture, comprises the following steps：
(1) B+ ions are injected in p-type chip substrate, P+ doped regions are formed, there is provided underlayer electrode forms Europe with substrate
Nurse is contacted；
(2) P+ ions are injected in p-type chip substrate, N well regions are formed；
(3) As+ ions are injected in N well regions, forms N+ doped regions, there is provided ohm formed between metal and diode cathode and is connect
Touch；
(4) deposited oxide layer, and chemical wet etching oxide layer, form electrode contact hole；
(5) sputter multiple layer metal, and chemical wet etching metal level, form underlayer electrode, diode cathode, diode sun respectively
Pole；
(6) it is thinning, obtain final product product.
Further, thinning is full thinning back side of silicon wafer；Or, in device area thinning back side, final thickness 10 μm~
700μm。
Yet further, diode anode is by metal and N well region directly contacts.
Further, the cut-off frequency of made high frequency silicon Schotty diode structure is more than 200GHz.
In addition, the diode anode and the interdigital setting of diode cathode.That is diode anode and diode are cloudy
Pole uses interdigitated electrode structure.
What deserves to be explained is, the present invention uses anode and cathode interdigital structure, is effectively reduced diode series resistance, overcomes silicon
Material and technique make diode series resistance hang-up, while being thinned chip thickness, reduce parasitic capacitance, therefore improve
Silicon Schotty diode high frequency performance, reduces radio frequency loss.
The present invention has underlayer electrode, and p-type chip substrate can be made to keep, with potential or reverse bias, reducing silicon with N traps PN junction
Schottky diode leakage current.
Depending on the interdigital quantity of diode anode and cathode electrode of the invention and length can be according to design parameters, its spacing becomes
Change according to institute's accepted standard CMOS making technology constrained designs.
The present invention compared with prior art, with advantages below and beneficial effect：
(1) the CMOS technology making technology line for using, slightly operation adjustment can meet production, can be greatly reduced and be produced into
This.
(2) the Silicon Wafer dimensioned area that the COMS manufacturing process of commercial standard (CS) is produced is big, high-volume manufacture silicon Schotty
Diode singulated dies are shared cost equally and are greatly lowered.
(3) present invention uses anode and cathode interdigital and chip thinning structure, improves silicon Schotty diode cut-off frequency.Fig. 8
It is the I-V test curves of the silicon Schotty diode manufactured using 0.35 μm of standard CMOS process, negative and positive number of pole-pairs 10, series electrical
Road ＜ 6 Ω, Fig. 9 are the C-V test curves of Schottky diode, electric capacity 0.18pF, therefore the silicon Schotty diode cutoff frequency
Rate ＞ 200GHz.
(4) present invention using commercial standard (CS) COMS processing lines manufacture silicon Schotty pipe, device performance stabilization, repeatability,
Reliability can be protected.
Brief description of the drawings
Fig. 1 is high frequency silicon Schotty diode planar structure schematic diagram of the present invention.
Fig. 2 is high frequency silicon Schotty diode device cross section structure diagram of the present invention.
Fig. 3 forms P+ doped region schematic diagrames to inject B+ ions in p-type chip substrate in the present invention.
Fig. 4 forms N well region schematic diagrames to inject P+ ions in p-type chip substrate in the present invention.
Fig. 5 forms N+ doped region schematic diagrames to inject As+ ions in N well regions in the present invention.
Fig. 6 is metal electrode contact hole making schematic diagram in the present invention.
Fig. 7 is metal electrode making schematic diagram in the present invention.
Fig. 8 is the I-V characteristic test curve figure of medium-high frequency silicon Schotty diode of the present invention.
Fig. 9 is the C-V characteristic test curve maps of medium-high frequency silicon Schotty diode of the present invention.
Wherein, the corresponding parts title is marked to be in accompanying drawing：1-P cake core substrates, 2-N well regions, 3- diode anodes,
4- diode cathodes, 5- underlayer electrodes, 6-N+ doped regions, 7-P+ doped regions, 8- oxide layers.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples, and embodiments of the present invention are included but is not limited to
The following example.
Embodiment
As shown in figs. 1 to 6, a kind of high frequency silicon Schotty diode structure of standard CMOS process manufacture, it is characterised in that
Including p-type chip substrate 1, P+ doped regions 7 and N well regions 2 in p-type chip substrate are arranged at, are arranged at the N+ doped regions of N well regions
6, the oxide layer 8 of p-type chip substrate side is arranged at, and be arranged at diode anode 3, diode cathode 4 in oxide layer
With underlayer electrode 5.Wherein, the diode anode is by metal and N well region directly contacts.High frequency silicon Schotty diode cutoff frequency
Rate is more than 200GHz.The diode anode and the interdigital setting of diode cathode.
Silicon Schotty diode of the invention uses anode and cathode interdigital structure, can effectively reduce diode series resistance, together
Shi Jinhang chip backs are thinning, reduce parasitic capacitance, improve its high frequency performance, and it can use the CMOS technology of existing standard
Processing procedure, as long as slightly operation adjustment can be manufactured, on the premise of radio circuit application requirement is met, can be greatly reduced diode
Cost.
In order to the present invention is better described, the preparation method of the high frequency silicon Schotty diode structure is provided below, specifically
Step is as follows：
(1) according to standard CMOS process processing procedure, B+ ions are injected in p-type chip substrate, P+ doped regions is formed, as lining
Hearth electrode forms the transition region of Ohmic contact with p-type chip substrate, as shown in Figure 3.
(2) according to standard CMOS process processing procedure, P+ ions are injected in p-type chip substrate, forms N well regions, N+ well regions will
It is the active area of silicon Schotty diode device, as shown in Figure 4.
(3) according to standard CMOS process processing procedure, As+ ions are injected in N well regions, N+ doped regions is formed, as silicon Schotty
The cathode electrode of diode forms the transition region of Ohmic contact with semi-conducting material, as shown in Figure 5.
(4) according to standard CMOS process processing procedure, in the first metal formation process, the oxide layer of boracic phosphorus, and light are deposited
Etch electrode contact hole quarter, as shown in Figure 6.
(5) according to standard CMOS process processing procedure, in first layer metal formation process, the sputter multiple layer metal on wafer
Film, and chemical wet etching goes out each electrode of silicon Schotty diode, forms diode anode, diode cathode and underlayer electrode, such as Fig. 7
It is shown.
(6) chip thinning, after wafer completes whole operation flow, according to design requirement, thinning back side, core is carried out to chip
Piece thickness is thinned to 10 μm~700 μm, can to whole wafer overall reduction, also can only thinning device area, to improve Xiao Te
Base high frequency performance, as shown in Figure 2.
As for the second layer metal interconnection in other techniques, the operation such as device purifying protection can successively after (5th) operation
Carry out, it is consistent with conventional criteria CMOS technology processing procedure, do not tire out state herein.
The high frequency silicon Schotty diode preparation method only using or have adjusted a little operation in existing standard CMOS i.e.
Requirement can be met, therefore with process is simple, Schottky diode reliability, uniformity and repeatability obtained by manufacture can be obtained
To guarantee.
According to above-described embodiment, the present invention just can be well realized.What deserves to be explained is, before said structure design
Put, to solve same technical problem, even if some made in the present invention are used without substantial change or polishing
Technical scheme essence still as the present invention, therefore it should also be as within the scope of the present invention.
Claims (9)
1. the high frequency silicon Schotty diode structure that a kind of standard CMOS process is manufactured, it is characterised in that including p-type chip substrate
(1) P+ doped regions (7) and N well regions (2) in p-type chip substrate, are arranged at, the N+ doped regions (6) of N well regions are arranged at, are set
In the oxide layer (8) of p-type chip substrate side, and it is arranged at diode anode (3), diode cathode (4) in oxide layer
With underlayer electrode (5).
2. the high frequency silicon Schotty diode structure that a kind of standard CMOS process according to claim 1 is manufactured, its feature
It is that the diode anode is by metal and N well region directly contacts.
3. the high frequency silicon Schotty diode structure that a kind of standard CMOS process according to claim 1 is manufactured, its feature
It is that high frequency silicon Schotty diode cut-off frequency is more than 200GHz.
4. the high frequency silicon Schotty diode structure that a kind of standard CMOS process according to claim 1 is manufactured, its feature
It is, the diode anode and the interdigital setting of diode cathode.
5. the preparation method of the high frequency silicon Schotty diode structure of a kind of standard CMOS process manufacture, it is characterised in that including
Following steps：
(1) B+ ions are injected in p-type chip substrate, P+ doped regions is formed, there is provided underlayer electrode forms ohm and connects with substrate
Touch；
(2) P+ ions are injected in p-type chip substrate, N well regions are formed；
(3) As+ ions are injected in N well regions, forms N+ doped regions, there is provided Ohmic contact is formed between metal and diode cathode；
(4) deposited oxide layer, and chemical wet etching oxide layer, form electrode contact hole；
(5) sputter multiple layer metal, and chemical wet etching metal level, form underlayer electrode, diode cathode, diode anode respectively；
(6) it is thinning, obtain final product product.
6. the making side of the high frequency silicon Schotty diode structure of a kind of standard CMOS process manufacture according to claim 5
Method, it is characterised in that thinning is full thinning back side of silicon wafer；Or, in device area thinning back side, final thickness is in 10 μm~700 μ
m。
7. the making side of the high frequency silicon Schotty diode structure of a kind of standard CMOS process manufacture according to claim 5
Method, it is characterised in that diode anode is by metal and N well region directly contacts.
8. the making side of the high frequency silicon Schotty diode structure of a kind of standard CMOS process manufacture according to claim 5
Method, it is characterised in that high frequency silicon Schotty diode cut-off frequency is more than 200GHz.
9. the making side of the high frequency silicon Schotty diode structure of a kind of standard CMOS process manufacture according to claim 5
Method, it is characterised in that the diode anode and the interdigital setting of diode cathode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710125150.9A CN106784025A (en) | 2017-03-03 | 2017-03-03 | A kind of the high frequency silicon Schotty diode structure and preparation method of standard CMOS process manufacture |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710125150.9A CN106784025A (en) | 2017-03-03 | 2017-03-03 | A kind of the high frequency silicon Schotty diode structure and preparation method of standard CMOS process manufacture |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258843A (en) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | Multi-hole substrate for terahertz Schottky diode |
| TWM511295U (en) * | 2015-07-02 | 2015-11-01 | Univ Central Taiwan Sci & Tech | Simple operation measurement ruler for measuring pediatric oral ulcer |
| CN106206694A (en) * | 2015-05-06 | 2016-12-07 | 北大方正集团有限公司 | A kind of power device and preparation method thereof |
-
2017
- 2017-03-03 CN CN201710125150.9A patent/CN106784025A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258843A (en) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | Multi-hole substrate for terahertz Schottky diode |
| CN106206694A (en) * | 2015-05-06 | 2016-12-07 | 北大方正集团有限公司 | A kind of power device and preparation method thereof |
| TWM511295U (en) * | 2015-07-02 | 2015-11-01 | Univ Central Taiwan Sci & Tech | Simple operation measurement ruler for measuring pediatric oral ulcer |
Non-Patent Citations (1)
| Title |
|---|
| LI QIANG ET AL: "Design and Fabrication of Schottky Diode with Standard CM OS Process", 《CHINESE JOURNAL OF SEMICONDUCTORS》 * |
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