CN104810410A - Hopscotch diode device and manufacturing method - Google Patents
Hopscotch diode device and manufacturing method Download PDFInfo
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- CN104810410A CN104810410A CN201510230516.XA CN201510230516A CN104810410A CN 104810410 A CN104810410 A CN 104810410A CN 201510230516 A CN201510230516 A CN 201510230516A CN 104810410 A CN104810410 A CN 104810410A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000011231 conductive filler Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a Hopscotch diode device and manufacturing method. The device comprises an N-type doped semiconductor substrate, an N-type doped coaxial layer, a P-type well region, a conductive filling layer, a metal contacting layer, an anode metal electrode and a cathode metal electrode. According to the device, the device conduction voltage reducing requirement is met, the breakdown voltage of the device is increased, the qualified rate of the device production is increased, and the reliability of the device production is improved.
Description
Technical field
The invention belongs to semiconductor power device technology field, relate to a kind of high voltage power device, be specifically related to a kind of high-speed switch and the schottky diode device of low conduction voltage drop and manufacture method.
Background technology
Schottky diode has the feature of low forward voltage drop and high-speed switch, and it widely uses in field of switch power as rectifier.
But along with the increase of device reversed bias voltage, under high current field condition, Schottky barrier reduces, thus can cause the increase of diode leakage current.In order to address this problem, traditional way is in technique, adopt the metal with high work function to be used as positive contact, and to improve Schottky barrier, but this can cause the increase of forward voltage drop accordingly, and the conducting power consumption of device also increases thereupon.There has been proposed the Schottky diode adopting groove type structures, the compromise of conducting power consumption and reverse leakage can be realized.
The feature of groove-type Schottky diode arranges groove structure in parallel, and when device reverse bias, groove and n type semiconductor layer realize two-way exhausting, thus improve the puncture voltage of device.Under identical process conditions, groove-type Schottky diode compares traditional structure, has lower conduction voltage drop and less reverse leakage, and in system works, conduction loss reduces, thus maximum functional junction temperature is increased, and improves the reliability of system.
Summary of the invention
The invention provides a kind of schottky diode device and the manufacture method thereof with groove structure, while can ensureing break-over of device drop requirements, improve the puncture voltage of device.
According to an aspect of the present invention, provide a kind of schottky diode device, comprising: N-type dope semiconductor substrates, N-type doped epitaxial layer, P type trap zone, conductive filler layer, metal contact layer, anode metal electrodes and cathodic metal electrode; On described N-type dope semiconductor substrates, be provided with N-type doped epitaxial layer, be provided with conductive filler layer in the upside of described N-type doped epitaxial layer, the outside of described conductive filler layer is provided with P type trap zone; Described P type trap zone, conductive filler layer and part described N-type doped epitaxial layer forms the primitive unit cell region, inside of described schottky diode device jointly; Above described inner primitive unit cell region, be provided with metal contact layer, described metal contact layer and described N-type doped epitaxial layer form Schottky contacts, and described metal contact layer and the described P type trap zone of part form ohmic contact; Metal conducting layer is provided with above described metal contact layer, constitute the anode metal electrodes of described schottky diode device, metal conducting layer is provided with in the below of described N-type doped substrate, constitute the cathodic metal electrode of described schottky diode device, it is characterized in that, described P type trap zone, conductive filler layer and described N-type doped epitaxial layer are alternately arranged and form primitive unit cell region.
Further, described P type trap zone is formed by carrying out ion implantation technology after groove corrosion.
Further, described conductive filler layer is polysilicon or metal material.
Further, the conduction voltage drop that the distance between described P type trap zone and the concentration ratio between described P type trap zone and described N-type doped epitaxial layer should be met by this device and requirement of withstand voltage determine jointly.
Further, the distance bottom conductive filler layer described in described P type trap zone bag is greater than the distance of conductive filler layer sidewall described in described P type trap zone bag.
According to another aspect of the invention, provide a kind of schottky diode device manufacture method, comprise the following steps:
S1, one piece of N-type high-concentration dopant silicon chip, epitaxial growth N-type epitaxy layer;
S2, adopts shallow slot etching process to form groove, is infused in groove both sides and bottom forms P type trap zone by angle;
S3, adopts filling and flatening process to form conductive filler layer at trench interiors;
S4, then depositing metal contact layer and N-type doped epitaxial layer form Schottky contacts;
S5, through deposit aluminium technique, form the anode of anode metal electrodes (6) as device, cathodic metal electrode, as the negative electrode of device, finally carries out follow-up Passivation Treatment.
Tool of the present invention has the following advantages:
In structure of the present invention, the method utilizing trench lithography version band angle ion to inject forms P type trap zone, when device reverse biased and N-type epitaxy layer realize two-way exhausting, and exhaust groove deposition insulating layer is unidirectional in nontraditional technology, thus can epitaxial layer concentration be improved, while ensureing break-over of device drop requirements, improve the puncture voltage of device;
In structure of the present invention, described in described P type trap zone bag, the distance of conductive filler layer sidewall is less, can device reverse withstand voltage time formed and effectively exhaust, thus reduce leakage current; And distance bottom conductive filler layer described in described P type trap zone bag is comparatively large, the reliability of device can be improved.
Except object described above, feature and advantage, the present invention also has other object, feature and advantage.Below with reference to figure, the present invention is further detailed explanation.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.
Fig. 1 is the sectional structure chart of a kind of schottky diode device of the embodiment of the present invention;
Fig. 2 is the section of structure that a kind of schottky diode device of the embodiment of the present invention forms N-type dope semiconductor substrates, N-type doped epitaxial layer, P type trap zone;
Fig. 3 is the section of structure that a kind of schottky diode device of the embodiment of the present invention forms N-type dope semiconductor substrates, N-type doped epitaxial layer, P type trap zone, conductive filler layer;
Fig. 4 is the section of structure that a kind of schottky diode device of the embodiment of the present invention forms N-type dope semiconductor substrates, N-type doped epitaxial layer, P type trap zone, conductive filler layer, metal contact layer.
Reference numeral:
1 be N-type dope semiconductor substrates, 2 be N-type doped epitaxial layer, 3 be P type trap zone, 4 be conductive filler layer, 5 be metal contact layer, 6 for anode metal electrodes and 10 is for cathodic metal electrode.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Referring to figs. 1 through Fig. 4, a kind of schottky diode device as shown in Figures 1 to 4, comprising: N-type dope semiconductor substrates 1, N-type doped epitaxial layer 2, P type trap zone 3, conductive filler layer 4, metal contact layer 5, anode metal electrodes 6 and cathodic metal electrode 10; On described N-type dope semiconductor substrates 1, be provided with N-type doped epitaxial layer 2, be provided with conductive filler layer 4 in the upside of described N-type doped epitaxial layer 2, the outside of described conductive filler layer 4 is provided with P type trap zone 3; Described P type trap zone 3, conductive filler layer 4 and part described N-type doped epitaxial layer 2 form the primitive unit cell region, inside of described schottky diode device jointly; Above described inner primitive unit cell region, be provided with metal contact layer 5, described metal contact layer 5 forms Schottky contacts with described N-type doped epitaxial layer 2, and described metal contact layer 5 forms ohmic contact with the described P type trap zone 3 of part; Metal conducting layer is provided with above described metal contact layer 5, constitute the anode metal electrodes 6 of described schottky diode device, metal conducting layer is provided with in the below of described N-type doped substrate 1, constitute the cathodic metal electrode 10 of described schottky diode device, it is characterized in that, described P type trap zone 3, conductive filler layer 4 and described N-type doped epitaxial layer 2 are alternately arranged and form primitive unit cell region.
Described P type trap zone 3 is formed by carrying out ion implantation technology after groove corrosion.
Described conductive filler layer 4 is polysilicon or metal material.
The conduction voltage drop that distance between described P type trap zone 3 and the concentration ratio between described P type trap zone 3 and described N-type doped epitaxial layer 2 should be met by this device and requirement of withstand voltage determine jointly.
Described P type trap zone 3 distance of wrapping bottom described conductive filler layer 4 is greater than the distance that described P type trap zone 3 wraps described conductive filler layer 4 sidewall.
Shown in Fig. 1 is the structure in single inside sources born of the same parents region, and hundreds and thousands of source born of the same parents' regions in parallel also can be selected to combine.
A kind of schottky diode device manufacture method, comprises the following steps:
S1, one piece of N-type high-concentration dopant silicon chip, epitaxial growth N-type epitaxy layer 2;
S2, adopts shallow slot etching process to form groove, is infused in groove both sides and bottom forms P type trap zone 3 by angle;
S3, adopts filling and flatening process to form conductive filler layer 4 at trench interiors;
S4, then depositing metal contact layer 5 and N-type doped epitaxial layer 2 form Schottky contacts;
S5, through deposit aluminium technique, form the anode of anode metal electrodes 6 as device, cathodic metal electrode 10, as the negative electrode of device, finally carries out follow-up Passivation Treatment.
Concrete steps are:
First, getting one piece of N-type high-concentration dopant silicon chip is substrate 1, and described substrate 1 grows N-type epitaxy layer 2, and the thickness of described epitaxial loayer 2 and concentration can affect the oppositely withstand voltage of device and forward voltage drop.Then, adopt shallow slot etching process to form groove, be infused in groove both sides and bottom by angle ion and form P type trap zone 3, as shown in Figure 2.Distance between described P type trap zone 3 and conduction voltage drop that between P type trap zone 3 and described N-type doped epitaxial layer, concentration ratio should be met by this device and requirement of withstand voltage determine jointly.
Then, as shown in Figure 3, adopt fill process to form conductive filler layer 4 at described trench interiors, then carry out planarization, described conductive filler layer 4 can be polysilicon or other metal material.
Next step, at silicon chip surface depositing metal contact layer 5, it and N-type doped epitaxial layer 2 form Schottky contacts, as shown in Figure 4.Described Metal Contact layer material can adopt titanium, aluminium, magnesium, tungsten, silver and alloy and silicide etc.
Finally, deposit conductive metal layer 6 on described metal contact layer 5, as the anode of device.Then carry out thinning to described substrate 1, then metallization forms the negative electrode 10 of device, as shown in Figure 1.Described conductive metal layer can be the materials such as Aluminum-aluminum alloy.
In structure of the present invention, the method utilizing trench lithography version band angle ion to inject forms P type trap zone, when device reverse biased and N-type epitaxy layer realize two-way exhausting, and exhaust groove deposition insulating layer is unidirectional in nontraditional technology, thus can epitaxial layer concentration be improved, while ensureing break-over of device drop requirements, improve the puncture voltage of device;
In structure of the present invention, described in described P type trap zone bag, the distance of conductive filler layer sidewall is less, can device reverse withstand voltage time formed and effectively exhaust, thus reduce leakage current; And distance bottom conductive filler layer described in described P type trap zone bag is comparatively large, the reliability of device can be improved.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention,
Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a schottky diode device, is characterized in that, comprising: N-type dope semiconductor substrates (1),
N-type doped epitaxial layer (2), P type trap zone (3), conductive filler layer (4), metal contact layer (5), anode metal electrodes (6) and cathodic metal electrode (10); On described N-type dope semiconductor substrates (1), be provided with N-type doped epitaxial layer (2), be provided with conductive filler layer (4) in the upside of described N-type doped epitaxial layer (2), the outside of described conductive filler layer (4) is provided with P type trap zone (3); Described P type trap zone (3), conductive filler layer (4) and part described N-type doped epitaxial layer (2) form the primitive unit cell region, inside of described schottky diode device jointly; Above described inner primitive unit cell region, be provided with metal contact layer (5), described metal contact layer (5) and described N-type doped epitaxial layer (2) form Schottky contacts, and described metal contact layer (5) and the described P type trap zone of part (3) form ohmic contact; Metal conducting layer is provided with in described metal contact layer (5) top, constitute the anode metal electrodes (6) of described schottky diode device, metal conducting layer is provided with in the below of described N-type doped substrate (1), constitute the cathodic metal electrode (10) of described schottky diode device, it is characterized in that, described P type trap zone (3), conductive filler layer (4) and described N-type doped epitaxial layer (2) are alternately arranged and form primitive unit cell region.
2. schottky diode device according to claim 1, is characterized in that, described P type
Well region (3) is formed by carrying out ion implantation technology after groove corrosion.
3. schottky diode device according to claim 1, is characterized in that, described conduction
Packed layer (4) is polysilicon or metal material.
4. schottky diode device according to claim 1, is characterized in that, described P type
The conduction voltage drop that distance between well region (3) and the concentration ratio between described P type trap zone (3) and described N-type doped epitaxial layer (2) should be met by this device and requirement of withstand voltage determine jointly.
5. schottky diode device according to claim 1, is characterized in that, described P type
The distance that well region (3) wraps described conductive filler layer (4) bottom is greater than the distance that described P type trap zone (3) wraps described conductive filler layer (4) sidewall.
6. a schottky diode device manufacture method, is characterized in that, comprises the following steps:
S1, one piece of N-type high-concentration dopant silicon chip, epitaxial growth N-type epitaxy layer (2);
S2, adopts shallow slot etching process to form groove, is infused in groove both sides and bottom forms P type trap zone (3) by angle;
S3, adopts filling and flatening process to form conductive filler layer (4) at trench interiors;
S4, then depositing metal contact layer (5) and N-type doped epitaxial layer (2) form Schottky contacts;
S5, through deposit aluminium technique, form the anode of anode metal electrodes (6) as device, cathodic metal electrode (10), as the negative electrode of device, finally carries out follow-up Passivation Treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510230516.XA CN104810410A (en) | 2015-05-08 | 2015-05-08 | Hopscotch diode device and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510230516.XA CN104810410A (en) | 2015-05-08 | 2015-05-08 | Hopscotch diode device and manufacturing method |
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| CN104810410A true CN104810410A (en) | 2015-07-29 |
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| CN201510230516.XA Pending CN104810410A (en) | 2015-05-08 | 2015-05-08 | Hopscotch diode device and manufacturing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514177A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | Aluminum surface low-voltage plane type MOS Schottky diode |
| CN111192826A (en) * | 2019-05-31 | 2020-05-22 | 深圳方正微电子有限公司 | Double-barrier groove epitaxial high-voltage PIN chip and manufacturing method thereof |
| CN111370494A (en) * | 2018-12-26 | 2020-07-03 | 深圳尚阳通科技有限公司 | Super junction device |
| CN111430305A (en) * | 2020-05-09 | 2020-07-17 | 捷捷半导体有限公司 | Method for manufacturing electrostatic discharge protection device and electrostatic discharge protection device |
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| US20020125541A1 (en) * | 1999-12-30 | 2002-09-12 | Jacek Korec | Method of fabricating trench junction barrier rectifier |
| US20050242411A1 (en) * | 2004-04-29 | 2005-11-03 | Hsuan Tso | [superjunction schottky device and fabrication thereof] |
| CN101621031A (en) * | 2008-06-20 | 2010-01-06 | 飞兆半导体公司 | Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices |
| CN204558473U (en) * | 2015-05-08 | 2015-08-12 | 西安西奈电子科技有限公司 | A kind of schottky diode device |
-
2015
- 2015-05-08 CN CN201510230516.XA patent/CN104810410A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020125541A1 (en) * | 1999-12-30 | 2002-09-12 | Jacek Korec | Method of fabricating trench junction barrier rectifier |
| US20050242411A1 (en) * | 2004-04-29 | 2005-11-03 | Hsuan Tso | [superjunction schottky device and fabrication thereof] |
| CN101621031A (en) * | 2008-06-20 | 2010-01-06 | 飞兆半导体公司 | Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices |
| CN204558473U (en) * | 2015-05-08 | 2015-08-12 | 西安西奈电子科技有限公司 | A kind of schottky diode device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514177A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | Aluminum surface low-voltage plane type MOS Schottky diode |
| CN105514177B (en) * | 2016-02-03 | 2018-07-24 | 泰州市梦之谷科技发展有限公司 | A kind of aluminium face low pressure plane formula MOS Schottky diodes |
| CN111370494A (en) * | 2018-12-26 | 2020-07-03 | 深圳尚阳通科技有限公司 | Super junction device |
| CN111370494B (en) * | 2018-12-26 | 2023-07-14 | 深圳尚阳通科技股份有限公司 | Superjunction device |
| CN111192826A (en) * | 2019-05-31 | 2020-05-22 | 深圳方正微电子有限公司 | Double-barrier groove epitaxial high-voltage PIN chip and manufacturing method thereof |
| CN111192826B (en) * | 2019-05-31 | 2023-05-26 | 深圳方正微电子有限公司 | Double-barrier groove epitaxial high-voltage PIN chip and manufacturing method thereof |
| CN111430305A (en) * | 2020-05-09 | 2020-07-17 | 捷捷半导体有限公司 | Method for manufacturing electrostatic discharge protection device and electrostatic discharge protection device |
| CN111430305B (en) * | 2020-05-09 | 2024-05-14 | 捷捷半导体有限公司 | Method for manufacturing electrostatic discharge protection device and electrostatic discharge protection device |
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Application publication date: 20150729 |
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