CN106784023A - A kind of junction barrier schottky diode - Google Patents
A kind of junction barrier schottky diode Download PDFInfo
- Publication number
- CN106784023A CN106784023A CN201611225372.XA CN201611225372A CN106784023A CN 106784023 A CN106784023 A CN 106784023A CN 201611225372 A CN201611225372 A CN 201611225372A CN 106784023 A CN106784023 A CN 106784023A
- Authority
- CN
- China
- Prior art keywords
- type semiconductor
- conductive type
- area
- schottky diode
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 210000002615 epidermis Anatomy 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 67
- 239000011229 interlayer Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241001661355 Synapsis Species 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to technical field of semiconductors, more particularly to a kind of diode of junction barrier schottky structure, including：First conductivity type substrate; first conductive type semiconductor layer; anode metal layer; insulating barrier; terminal protection area; second conductive type semiconductor area; multiple grooves with certain intervals are formed in the first conductive type semiconductor layer upper epidermis; the terminal protection area and the second conductive type semiconductor area are formed at the beneath trenches; the trenched side-wall is formed with insulative sidewall; filling conductive material in the groove, the present invention effectively improves improvement result of the junction barrier schottky diode PN junction to the pressure-resistant performance of diode.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of diode of junction barrier schottky structure.
Technical background
Schottky diode is that semiconductor layer and metal level are played into rectification by Schottky junction, using Schottky barrier to make
Semiconductor element.Schottky diode can more quickly work than general PN engagement diodes, with forward voltage
Decline less characteristic, it is more as high frequency, low pressure, high current commutation diode, fly-wheel diode, protection diode, also has
Make commutation diode, small-signal detector diode in the circuits such as microwave communication to use, in the middle ratio such as communication power supply, frequency converter
More typically.
But, Schottky diode reverse biased is relatively low and reverse leakage current is bigger than normal.Junction barrier schottky (JBS) structure
Diode, is to be combined together Schottky and PN, and the first conductive type semiconductor forms Schottky contacts with metal level,
The first conductive type semiconductor contact with metal level and be formed with multiple in the top layer of side and have the second conduction of certain intervals simultaneously
Type semiconductor, the second conductive type semiconductor and the first conductive type semiconductor form PN junction, and tunnelling is excluded by PN potential barriers
Limitation of the electric current to highest blocking voltage, has very big advantage in the diode field of high speed, high withstand voltage.
But, the diode of junction barrier schottky structure, the second conductive type semiconductor is due in the first conduction type half
The vicinity of the Schottky barrier that conductor is formed with metal level, it is thus possible to be affected by it forming vague and general with metal level contact position
Layer, reduces improvement result of the PN junction to the pressure-resistant performance of diode, especially diode fringe region.
The content of the invention
It is an object of the invention to provide a kind of junction barrier schottky diode, improve PN junction and the pressure-resistant performance of diode is changed
Kind effect.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of junction barrier schottky diode, including：First conductivity type substrate, is formed in the first conduction type lining
The first conductive type semiconductor layer on bottom, is formed on first conductive type semiconductor layer and formed Schottky
The anode metal layer of contact, is formed in exhausted on first conductive type semiconductor layer in the edge of the anode metal layer to outside
Edge layer, the terminal protection area of the second conduction type being formed in below the insulating barrier and anode metal layer, is formed in the end
The multiple in the first conductive type semiconductor layer upper epidermis on the inside of the protection zone of end has second conduction type half of certain intervals
Conductor region, forms multiple grooves with certain intervals in the first conductive type semiconductor layer upper epidermis, the terminal is protected
Shield area and the second conductive type semiconductor area are formed at the beneath trenches, and the trenched side-wall is formed with insulative sidewall, described
Filling conductive material in groove.
Preferably, the conductive material is conductive polycrystalline silicon.
Preferably, the gash depth above the terminal protection area is more than the groove above the second conductive type semiconductor area
Depth.
Preferably, the terminal protection area doping well depth is more than the second conductive type semiconductor area doping well depth.
Preferably, the distance closer between terminal protection area, groove is smaller.
Preferably, the first conductive type semiconductor layer on the outside of the groove notch above the terminal protection area and anode gold
Category interlayer forms dielectric area.
Preferably, the first conductive type semiconductor on the outside of the groove notch above the second conductive type semiconductor area
Floor forms dielectric area with anode metal interlayer.
Preferably, the terminal protection area includes highly doped with the high-doped zone of the conductive material contacts in groove and encirclement
The doped regions in area.
Preferably, the second conductive type semiconductor area include with groove in conductive material contacts high-doped zone and
Surround the doped regions of high-doped zone.
Preferably, first conduction type is N-type, and the second conduction type is p-type.
Relative to prior art, the invention has the advantages that：
Multiple is formed in first conductive type semiconductor layer upper epidermis described in junction barrier schottky diode of the present invention to be had
The groove of certain intervals, the terminal protection area and the second conductive type semiconductor area are formed at the beneath trenches, the ditch
Groove sidewall is formed with filling conductive material in insulative sidewall, the groove, and the terminal protection area partly leads with the second conduction type
PN junction and the first conductive type semiconductor layer and anode metal layer formation that body area is formed with the first conductive type semiconductor layer
Schottky junction not in the same plane, and is insulated by the insulative sidewall of the groove and is separated by, therefore can under backward voltage
The schottky junctions synapsis for effectively suppressing to be formed from anode metal layer and the first conductive type semiconductor layer in vague and general layer is protected to terminal
Shield area and the second conductive type semiconductor area extend, and improve improvement result of the PN junction to the pressure-resistant performance of diode；
Additionally, filling conductive material in groove described in junction barrier schottky diode of the present invention, trenched side-wall is formed with absolutely
Edge side wall, conductive material, insulative sidewall and the first conductive type semiconductor layer form MOS structure, to two poles under forward voltage
Without influence, under backward voltage, channel bottom is exhausted pipe by PN junction, and MOS structure exhausts the first conduction type near trenched side-wall
Semiconductor layer, further enhances the reverse resistance to pressure energy of diode together with terminal protection area and the second conductive type semiconductor area
Power.
Brief description of the drawings
Fig. 1 is first embodiment structural representation；
Fig. 2 is second embodiment structural representation.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment is introduced to the present invention, embodiment is only used for explaining the present invention,
There is not any restriction effect to the present invention.
First embodiment
As shown in figure 1, a kind of junction barrier schottky diode, including：First conductivity type substrate 10, is formed in described
10 the first conductive type semiconductor layer 20, is formed on first conductive type semiconductor layer 20 in one conductivity type substrate
And the anode metal layer 30 of formed Schottky contacts, is formed in the first of edge to the outside of the anode metal layer 30
Insulating barrier 40 on conductive type semiconductor layer 20, is formed in the insulating barrier 40 conductive with the second of the lower section of anode metal layer 30
The terminal protection area 50 of type, is formed in the upper epidermis of the first conductive type semiconductor layer 20 of the inner side of the terminal protection area 50
Multiple there is the second conductive type semiconductor area 60 of certain intervals, in the upper epidermis of the first conductive type semiconductor layer 20
Multiple grooves 70 with certain intervals are formed, conductive type semiconductor area 60 of the terminal protection area 50 and second is formed at institute
The lower section of groove 70 is stated, the side wall of the groove 70 is formed with filling conductive material 72 in insulative sidewall 71, the groove.
The conduction type of the present embodiment first can be alternatively p-type for N-type, commonly using the first conduction of N-type in practical application
Type substrates, below following first conduction type be N-type, the second conduction type is introduced for p-type.First conductivity type substrate
10 is the N+ Semiconductor substrates of highly doped impurity concentration, such as carborundum or silicon, and the first conductive type semiconductor layer 20 is low-mix
The N- semiconductor layers of miscellaneous concentration, it can be the epitaxial layer in the Epitaxial growth of the first conductivity type substrate 10.Anode metal layer 30
With the metal material that the first conductive type semiconductor layer 20 forms Schottky contacts.It is formed in the side of the anode metal layer 30
The material of insulating barrier 40 on edge to first conductive type semiconductor layer 20 in outside can be silica or silicon nitride etc., overlook it
Ring-type is formed around central area, the terminal of the insulating barrier 40 and the second conduction type of the lower section of anode metal layer 30 is formed in
Protection zone 50 is also ring-type under overlooking, i.e., the groove of the top of terminal protection area 50 is also ring-type.It is formed in the terminal protection area
Multiple in the upper epidermis of first conductive type semiconductor layer 20 of 50 inner sides has the second conductive type semiconductor of certain intervals
Area 60, can be formed by the ion implantation doping on the first conductive type semiconductor layer 20, such as adulterated on N- semiconductor layers
The p type impurity such as boron or aluminium is formed.
Conductive type semiconductor area 60 of terminal protection area 50 and second described in the present embodiment junction barrier schottky diode with
PN junction and the first conductive type semiconductor layer 20 and the formation of anode metal layer 30 that first conductive type semiconductor layer 20 is formed
Schottky junction not in the same plane, and is insulated by the insulative sidewall 71 of the groove 70 and is separated by, therefore in backward voltage
The schottky junctions synapsis formed from 30 and first conductive type semiconductor layer of anode metal layer 20 in vague and general layer can effectively be suppressed down
Extend to conductive type semiconductor area 60 of terminal protection area 50 and second, improve improvement of the PN junction to the pressure-resistant performance of diode and make
With；
Additionally, filling conductive material 72 in groove 70 described in the present embodiment, the side wall of groove 70 is formed with insulative sidewall 71, leads
Electric material 72,71 and first conductive type semiconductor layer of insulative sidewall 20 formed MOS structure, under forward voltage to diode without
Influence, under backward voltage, channel bottom is by between the second conductive type semiconductor area 60 and the first conductive type semiconductor layer 20
The PN junction of formation exhausts, and MOS structure exhausts the first conductive type semiconductor layer 20 of the adjacent sidewalls of groove 70, with terminal protection area
50 and second conductive type semiconductor area 60 further enhance the reverse voltage endurance capability of diode together.The conductive material 72
Can be conductive polycrystalline silicon, polysilicon has good gap filling capability, strengthens the stability of diode.
PN caused by extension of the vague and general floor caused due to Schottky contacts in the second conductive type semiconductor area 60
The improvement result of the pressure-resistant performance of peering diode weakens edge region and is especially apparent, so, terminal described in the present embodiment is protected
The depth of groove 70 of the top of shield area 50 is preferably greater than the depth of groove 70 of the top of the second conductive type semiconductor area 60, so that effectively
Suppress the extension of the vague and general layer of fringe region, strengthen the pressure-resistant performance of diode reverse.
Because fringe region is reversely pressure-resistant weak, the doping of terminal protection area 50 well depth is more than the second conductive type semiconductor
Adulterate well depth in area 60, and the distance closer between terminal protection area 50, groove 70 is smaller, more uniformly effectively increases each area
Domain voltage endurance capability.
Additionally, terminal protection area 50 described in the present embodiment can also include the height contacted with the conductive material 72 in groove 70
Doped region 51 and surround high-doped zone 51 doped regions 52, the second conductive type semiconductor area 60 include with groove 70 in
Conductive material connect 72 tactile high-doped zones 61 and surround the doped regions 62 of high-doped zone 61, and then reduce contact resistance, institute
The doping concentration of doped regions 51 for stating terminal protection area 50 is adulterated less than the doped regions 61 in the second conductive type semiconductor area 60
Concentration, preferably increases edge compressive property.
Second embodiment
Relative to first embodiment, on the outside of the notch of groove 70 of the top of the terminal protection area 50 first leads the present embodiment
Outside the notch of groove 70 of the top of between electric type semiconductor layer 20 and anode metal layer 30 and the second conductive type semiconductor area 60
First conductive type semiconductor layer 20 and the anode metal interlayer 30 of side form dielectric area 80, prevent at the notch of groove 70
First conductive type semiconductor layer 20 contacts with anode metal layer 30 and causes point discharge and increase leakage current.
Claims (10)
1. a kind of junction barrier schottky diode, including：First conductivity type substrate, is formed in first conductivity type substrate
On the first conductive type semiconductor layer, be formed on first conductive type semiconductor layer and formed schottky junctions
Tactile anode metal layer, is formed in the insulation on first conductive type semiconductor layer in the edge of the anode metal layer to outside
Layer, the terminal protection area of the second conduction type being formed in below the insulating barrier and anode metal layer, is formed in the terminal
The second conduction type that the multiple in the first conductive type semiconductor layer upper epidermis on the inside of protection zone has certain intervals is partly led
Body area, it is characterised in that：Multiple grooves with certain intervals, institute are formed in the first conductive type semiconductor layer upper epidermis
State terminal protection area and be formed at the beneath trenches with the second conductive type semiconductor area, the trenched side-wall is formed with insulation sides
Filling conductive material in wall, the groove.
2. junction barrier schottky diode according to claim 1, it is characterised in that：The conductive material is conductive polycrystalline
Silicon.
3. junction barrier schottky diode according to claim 1, it is characterised in that：Ditch above the terminal protection area
Groove depth is more than the gash depth above the second conductive type semiconductor area.
4. junction barrier schottky diode according to claim 1, it is characterised in that：Adulterate well depth in the terminal protection area
More than the second conductive type semiconductor area doping well depth.
5. junction barrier schottky diode according to claim 1, it is characterised in that：It is described closer to terminal protection area,
Distance between groove is smaller.
6. junction barrier schottky diode according to claim 1, it is characterised in that：Ditch above the terminal protection area
The first conductive type semiconductor layer on the outside of groove notch forms dielectric area with anode metal interlayer.
7. junction barrier schottky diode according to claim 1, it is characterised in that：Second conductive type semiconductor
The first conductive type semiconductor layer on the outside of groove notch above area forms dielectric area with anode metal interlayer.
8. junction barrier schottky diode according to claim 1, it is characterised in that：The terminal protection area includes and ditch
The high-doped zone of the conductive material contacts in groove and the doped regions of encirclement high-doped zone.
9. junction barrier schottky diode according to claim 1, it is characterised in that：Second conductive type semiconductor
Area includes the doped regions of the high-doped zone and encirclement high-doped zone with the conductive material contacts in groove.
10. junction barrier schottky diode according to claim 1, it is characterised in that：First conduction type is N
Type, the second conduction type is p-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611225372.XA CN106784023B (en) | 2016-12-27 | 2016-12-27 | A kind of junction barrier schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611225372.XA CN106784023B (en) | 2016-12-27 | 2016-12-27 | A kind of junction barrier schottky diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106784023A true CN106784023A (en) | 2017-05-31 |
| CN106784023B CN106784023B (en) | 2019-09-20 |
Family
ID=58921562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611225372.XA Active CN106784023B (en) | 2016-12-27 | 2016-12-27 | A kind of junction barrier schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106784023B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231866A (en) * | 2017-12-07 | 2018-06-29 | 中国电子科技集团公司第五十五研究所 | A kind of SiC schottky diode structure and preparation method for improving surge capacity |
| CN113471301A (en) * | 2020-03-31 | 2021-10-01 | 比亚迪半导体股份有限公司 | Groove Schottky diode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
| CN102738213A (en) * | 2011-04-06 | 2012-10-17 | 罗姆股份有限公司 | Semiconductor device |
| CN103855226A (en) * | 2012-12-06 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | Schottky clamping diode with groove structure and terminal structure |
| CN105957864A (en) * | 2015-03-09 | 2016-09-21 | 罗伯特·博世有限公司 | Semiconductor device having a trench MOS barrier schottky diode |
-
2016
- 2016-12-27 CN CN201611225372.XA patent/CN106784023B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
| CN102738213A (en) * | 2011-04-06 | 2012-10-17 | 罗姆股份有限公司 | Semiconductor device |
| CN103855226A (en) * | 2012-12-06 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | Schottky clamping diode with groove structure and terminal structure |
| CN105957864A (en) * | 2015-03-09 | 2016-09-21 | 罗伯特·博世有限公司 | Semiconductor device having a trench MOS barrier schottky diode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231866A (en) * | 2017-12-07 | 2018-06-29 | 中国电子科技集团公司第五十五研究所 | A kind of SiC schottky diode structure and preparation method for improving surge capacity |
| CN108231866B (en) * | 2017-12-07 | 2020-07-21 | 中国电子科技集团公司第五十五研究所 | Silicon carbide Schottky diode structure capable of improving surge capacity and preparation method thereof |
| CN113471301A (en) * | 2020-03-31 | 2021-10-01 | 比亚迪半导体股份有限公司 | Groove Schottky diode and preparation method thereof |
| CN113471301B (en) * | 2020-03-31 | 2023-10-17 | 比亚迪半导体股份有限公司 | Trench Schottky diode and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106784023B (en) | 2019-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101645448B (en) | Rectifier with pn clamp regions under trenches | |
| CN103733344B (en) | Semiconductor device | |
| US6710418B1 (en) | Schottky rectifier with insulation-filled trenches and method of forming the same | |
| CN102403315A (en) | Semiconductor device | |
| US8217420B2 (en) | Power semiconductor device | |
| CN111048585B (en) | Reverse conducting IGBT (insulated Gate Bipolar transistor) containing back groove type medium and floating space area | |
| CN117558761B (en) | Wide bandgap semiconductor trench MOSFET device and manufacturing method thereof | |
| CN106784023B (en) | A kind of junction barrier schottky diode | |
| CN103199119B (en) | Groove schottky semiconductor device with super junction structure and manufacturing method thereof | |
| US20150084121A1 (en) | Transistor Device with a Field Electrode | |
| US11094691B2 (en) | Semiconductor device | |
| US11322596B2 (en) | Semiconductor device including junction material in a trench and manufacturing method | |
| CN103579236A (en) | Lateral semiconductor device and manufacturing method therefor | |
| JP2021168379A (en) | Reverse-conducting igbt having reduced forward recovery voltage | |
| RU122204U1 (en) | Schottky Diode with Groove Structure | |
| CN114512531A (en) | Silicon carbide device | |
| CN114512532A (en) | Semiconductor device with a plurality of transistors | |
| CN113054016A (en) | Cell structure of silicon carbide MOSFET device and power semiconductor device | |
| CN106653870A (en) | Schottky barrier diode with junction termination extension structure | |
| CN117650158B (en) | Wide bandgap semiconductor trench MOSFET device and manufacturing method thereof | |
| KR101621151B1 (en) | Power Rectifier Device | |
| CN116314279B (en) | Terminal protection structure of power electronic chip | |
| CN102769028B (en) | Semiconductor structure and manufacturing method thereof | |
| CN117352557B (en) | Integrated SGT MOSFET and preparation process thereof | |
| CN103199102A (en) | Schottky semiconductor device with super junction structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190104 Address after: Room 1303, Building B, Kangxin Garden, 569 Wensan Road, Xihu District, Hangzhou City, Zhejiang 310000 Applicant after: Hangzhou Yizheng Technology Co., Ltd. Address before: 523000 productivity building 406, high tech Industrial Development Zone, Songshan Lake, Dongguan, Guangdong Applicant before: Dongguan Lianzhou Intellectual Property Operation Management Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201225 Address after: No.18-91, Gongye Road, South Taihu high tech Industrial Park, Wuxing District, Huzhou City, Zhejiang Province Patentee after: Zhejiang julibao Textile Technology Co., Ltd Address before: Room 1303, building B, Kangxin garden, 569 Wensan Road, Xihu District, Hangzhou City, Zhejiang Province Patentee before: HANGZHOU EZSOFT TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210115 Address after: 226500 group 27, shiliju, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Nantong Wangfeng Electronic Technology Co.,Ltd. Address before: No.18-91, Gongye Road, South Taihu high tech Industrial Park, Wuxing District, Huzhou City, Zhejiang Province Patentee before: Zhejiang julibao Textile Technology Co., Ltd |