CN103855226A - Schottky clamping diode with groove structure and terminal structure - Google Patents
Schottky clamping diode with groove structure and terminal structure Download PDFInfo
- Publication number
- CN103855226A CN103855226A CN201210520057.5A CN201210520057A CN103855226A CN 103855226 A CN103855226 A CN 103855226A CN 201210520057 A CN201210520057 A CN 201210520057A CN 103855226 A CN103855226 A CN 103855226A
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- Prior art keywords
- groove
- schottky
- groove structure
- type epitaxial
- epitaxial loayer
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- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- IYYIVELXUANFED-UHFFFAOYSA-N bromo(trimethyl)silane Chemical compound C[Si](C)(C)Br IYYIVELXUANFED-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a Schottky clamping diode with a groove structure. The diode comprises an N-type epitaxial layer serving as the negative electrode of the Schottky clamping diode with the groove structure, multiple grooves formed in the N-type epitaxial layer, P-type doping areas formed on the bottom of each groove, and a metal layer formed at the upper end of the N-type epitaxial layer and at the upper end of a groove area, wherein an oxidation layer is formed in each groove, polycrystalline silicon is arranged above each oxidation layer to enable the corresponding groove to be filled up, the multiple grooves and the oxidation layers and polycrystalline silicon inside form the groove area, the bottom of each groove is wrapped in the corresponding P-type doping area, the P-type doping areas are not mutually connected, and the N-type epitaxial layer and the groove area are connected through the metal layer to serve as the positive electrode of the Schottky clamping diode with the groove structure. The invention further discloses a terminal structure matched with the Schottky clamping diode with the groove structure. According to the Schottky clamping diode with the groove structure and the terminal structure, the pressure resistance of the bottom of each groove can be improved, so that reverse pressure resistance of products is improved.
Description
Technical field
The present invention relates to electronic technology field, particularly relate to a kind of containing groove structure Schottky catching diode.The invention still further relates to a kind of and described terminal structure matching containing groove structure Schottky catching diode.
Background technology
Schottky catching diode occupies a tiny space in power device field with its good forward conduction characteristic and high-speed switch speed, but owing to itself making the upper metal-semiconductor contact that adopts, it is reverse withstand voltage and reverse leakage is out of condition.
Nineteen ninety proposes a kind of by name TMBS(containing groove structure Schottky catching diode) product (shown in Figure 2), by at EPI(epitaxial loayer) in make groove structure can be by traditional schottky catching diode (SBD, shown in Figure 1) reverse breakdown point moves to body internal channel bottom by silicon face, the reverse breakdown voltage BV of SBD product can be done in this way higher time ensure very little forward voltage drop; In addition, because the reverse withstand voltage bottleneck of SBD product is at surperficial metal-semiconductor contact, thereby make the selection aspect of metal be able to more flexible.
But, because can making channel bottom, the existence of groove causes that electric field is concentrated, a little less than causing the withstand voltage relative thin of this position, need to bear larger pressure drop in the oxide layer structure of this position simultaneously.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of containing groove structure Schottky catching diode, can strengthen the voltage endurance capability of channel bottom, makes product have better oppositely voltage endurance capability; For this reason, the present invention also will provide a kind of and described terminal structure matching containing groove structure Schottky catching diode.
For solving the problems of the technologies described above, of the present invention containing groove structure Schottky catching diode, comprising:
One N-type epitaxial loayer, as the negative pole containing groove structure Schottky catching diode;
The multiple grooves that form in described N-type epitaxial loayer, the layer of oxide layer forming in described groove, is positioned on described oxide layer, fills the polysilicon of full described groove; Described multiple groove and inner oxide layer and polysilicon thereof, form trench region;
P type doped region that form at described channel bottom and parcel channel bottom; Each P type doped region is not connected each other;
The metal level forming in the upper end of described N-type epitaxial loayer and trench region, is connected N-type epitaxial loayer by this metal level with described trench region, as containing groove structure Schottky catching diode positive pole.
Described and the above-mentioned terminal structure matching containing groove structure Schottky catching diode is to adopt following technical scheme to realize, for the polysilicon at least first groove of terminal area can with primitive unit cell district equipotential, terminal area can be placed several unsteady grooves that are not connected with metal level and outwards arranged outward.
The present invention is directed to TMBS product and easily occur that at channel bottom electric field concentrates situation, do one (N-type extension is example) P type doped region at channel bottom, this PN junction can be alleviated voltage that oxide layer is born on the one hand, change the concentrated situation of electric field by affecting PN junction pattern on the other hand, make the reverse withstand voltage better effects if of product, and do not affect again product forward characteristic.
Ensureing under the good forward of Schottky diode and switching characteristic prerequisite, can there is better oppositely voltage endurance and reliability.Also can find out that from simulation result increasing injection mode at channel bottom forms P type doped region, can reduce channel bottom electric field strength, reverse breakdown voltage is about 10V, the reverse voltage endurance capability of improving product.
Terminal structure of the present invention and described Schottky diode match, and by reasonable adjustment terminal trenches spacing, can make the withstand voltage the best that reaches of terminal.
Brief description of the drawings
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is traditional Schottky diode structure schematic diagram;
Fig. 2 is TMBS structural representation;
Fig. 3 is improved containing groove structure Schottky structure of catching diode schematic diagram;
Fig. 4 is improved containing groove structure Schottky catching diode terminal way of realization, product structure schematic diagram.
Embodiment
Shown in Figure 3, in the following embodiments taking N-type extension as example, improved containing groove structure Schottky catching diode, comprising:
One N-type epitaxial loayer 1, as the negative pole 2 containing groove structure Schottky catching diode.The resistivity of described N-type epitaxial loayer 1 and thickness are determined according to product itself is oppositely withstand voltage.
The multiple grooves 3 that form by etching technics in described N-type epitaxial loayer 1, one deck the first oxide layer 8 of first growing in groove 3 inside, and then by thermal oxidation or CVD(chemical vapour deposition (CVD)) mode inserts polysilicon 7, finally forms trench region.
The P type doped region (P trap) 4 forming by Implantation mode in the bottom of described groove 3, these P type doped region 4 parcels of the bottom by described groove 3, each P type doped region 4 can not be connected each other.
The metal level 5 forming in the upper end of described N-type epitaxial loayer 1 and trench region, is connected N-type epitaxial loayer 1 by this metal level 5 with described trench region, as containing groove structure Schottky catching diode positive pole 6.
The existence of described trench region makes to be moved to by surface (being the interface of described N-type epitaxial loayer 1 and metal level 5) containing the reverse withstand voltage breakdown point of groove structure Schottky catching diode the inside (being the bottom position of groove) of described N-type epitaxial loayer 1, the diode of its critical electric field and withstand voltage region compared with normal has lifting, thereby realizes product puncture voltage and oppositely withstand voltage improvement.Because relate to this position Electric Field Distribution, the degree of depth of groove and spacing between any two need to be according to the reverse withstand voltage adjustment of product.
In the time that two electrodes that contain groove structure Schottky catching diode are added to reverse voltage, P type doped region 4 can be assisted by exhausting of PN junction withstand voltage to the bottom of described groove 3, thereby reduces this position electric field strength.Because be different from normal diode containing groove structure Schottky catching diode with its forward low pressure drop, need to there is forward metal-semiconductor contact region, so can not be connected between P type doped region 4 between two, the spacing of P type doped region 4 needs strict control between two, to prevent from becoming complete forward PN junction.
The chip that contains groove structure Schottky structure of catching diode for use proposes structure as shown in Figure 4 in the time of design terminal, comprise: multiple groove 3 structures side by side, wherein, be connected with primitive unit cell district 9 by contact hole near primitive unit cell district 9 one side part grooves 3, thereby formation equipotential, the Outboard Sections groove in primitive unit cell district 9 is floating ring structure, and its current potential is unfixing.Understand and primitive unit cell district 9 equipotentials for the polysilicon 7 of (being not limited to) in first groove 3 of termination environment 10, the top layer that the unsteady groove 3(groove 3 that Tn2 is not connected with metal level 5 is placed in termination environment 10 is outward covered by the second oxide layer 11, potential fluctuation) outwards arrangement.
The contact hole in primitive unit cell district 9 is opened completely, has subregion open by contact hole in termination environment 10, be follow-uply connected with containing groove structure Schottky catching diode by metal level, and the different terminal structure of size definition of terminal opened areas.
In Fig. 4, first groove of T1 GC group connector beginning, the Tn1 representative equipotential groove number that is connected with primitive unit cell district metal, Tn2 represents not the groove number with primitive unit cell district equipotential (potential fluctuation).
Limit without forward conduction current path for termination environment, the general design of spacing between adjacent two grooves in termination environment is little compared with primitive unit cell district, situation that it is withstand voltage is similar to a reverse PN junction, can be withstand voltage much larger than containing groove structure Schottky catching diode, thus make termination environment withstand voltage no longer weak.
By embodiment, the present invention is had been described in detail above, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (4)
1. containing a groove structure Schottky catching diode, comprising: a N-type epitaxial loayer, as the negative pole containing groove structure Schottky catching diode; It is characterized in that, also comprise:
The multiple grooves that form in described N-type epitaxial loayer, the layer of oxide layer forming in described groove, is positioned on described oxide layer, fills the polysilicon of full described groove; Described multiple groove and inner oxide layer and polysilicon thereof, form trench region;
P type doped region that form at described channel bottom and parcel channel bottom; Each P type doped region is not connected each other;
The metal level forming in the upper end of described N-type epitaxial loayer and trench region, is connected N-type epitaxial loayer by this metal level with described trench region, as containing groove structure Schottky catching diode positive pole.
2. as claimed in claim 1 containing groove structure Schottky catching diode, it is characterized in that: the resistivity of described N-type epitaxial loayer and thickness are determined according to product itself is oppositely withstand voltage.
One kind with the arbitrary described terminal structure matching containing groove structure Schottky catching diode of claim 1 or 2, it is characterized in that: for the polysilicon at least first groove of terminal area can with primitive unit cell district equipotential, terminal area can be placed several unsteady grooves that are not connected with metal level and outwards arranged outward.
4. terminal structure as claimed in claim 3, is characterized in that: the spacing between adjacent two grooves in terminal area is less than primitive unit cell district.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210520057.5A CN103855226A (en) | 2012-12-06 | 2012-12-06 | Schottky clamping diode with groove structure and terminal structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210520057.5A CN103855226A (en) | 2012-12-06 | 2012-12-06 | Schottky clamping diode with groove structure and terminal structure |
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| Publication Number | Publication Date |
|---|---|
| CN103855226A true CN103855226A (en) | 2014-06-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210520057.5A Pending CN103855226A (en) | 2012-12-06 | 2012-12-06 | Schottky clamping diode with groove structure and terminal structure |
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| CN (1) | CN103855226A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784023A (en) * | 2016-12-27 | 2017-05-31 | 东莞市联洲知识产权运营管理有限公司 | A kind of junction barrier schottky diode |
| CN107863386B (en) * | 2017-09-14 | 2023-09-29 | 华羿微电子股份有限公司 | Trench MOS device integrated with TMBS structure and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252258B1 (en) * | 1999-08-10 | 2001-06-26 | Rockwell Science Center Llc | High power rectifier |
| US20060209887A1 (en) * | 2005-02-11 | 2006-09-21 | Alpha & Omega Semiconductor, Ltd | Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact |
| CN101361194A (en) * | 2005-12-27 | 2009-02-04 | 美商科斯德半导体股份有限公司 | Apparatus and method for a fast recovery rectifier structure |
| CN101452967A (en) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | Schottky barrier diode device and manufacturing method thereof |
| CN101609801A (en) * | 2009-07-03 | 2009-12-23 | 英属维京群岛商节能元件股份有限公司 | Groove-type Schottky diode and preparation method thereof |
-
2012
- 2012-12-06 CN CN201210520057.5A patent/CN103855226A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252258B1 (en) * | 1999-08-10 | 2001-06-26 | Rockwell Science Center Llc | High power rectifier |
| US20060209887A1 (en) * | 2005-02-11 | 2006-09-21 | Alpha & Omega Semiconductor, Ltd | Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact |
| CN101361194A (en) * | 2005-12-27 | 2009-02-04 | 美商科斯德半导体股份有限公司 | Apparatus and method for a fast recovery rectifier structure |
| CN101452967A (en) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | Schottky barrier diode device and manufacturing method thereof |
| CN101609801A (en) * | 2009-07-03 | 2009-12-23 | 英属维京群岛商节能元件股份有限公司 | Groove-type Schottky diode and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784023A (en) * | 2016-12-27 | 2017-05-31 | 东莞市联洲知识产权运营管理有限公司 | A kind of junction barrier schottky diode |
| CN106784023B (en) * | 2016-12-27 | 2019-09-20 | 杭州易正科技有限公司 | A kind of junction barrier schottky diode |
| CN107863386B (en) * | 2017-09-14 | 2023-09-29 | 华羿微电子股份有限公司 | Trench MOS device integrated with TMBS structure and manufacturing method thereof |
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Application publication date: 20140611 |