CN106783957A - Carborundum multi-step groove knot termination extension terminal structure and preparation method thereof - Google Patents
Carborundum multi-step groove knot termination extension terminal structure and preparation method thereof Download PDFInfo
- Publication number
- CN106783957A CN106783957A CN201611224149.3A CN201611224149A CN106783957A CN 106783957 A CN106783957 A CN 106783957A CN 201611224149 A CN201611224149 A CN 201611224149A CN 106783957 A CN106783957 A CN 106783957A
- Authority
- CN
- China
- Prior art keywords
- termination extension
- step groove
- knot termination
- knot
- carborundum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 230000002146 bilateral effect Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
Abstract
The invention provides a kind of carborundum multi-step groove knot termination extension terminal structure, including silicon carbide substrates layer；It is formed at the first semiconductor layer on substrate layer, it is arranged at the multi-step groove structure of the first semiconductor layer surface, it is covered in the passivation layer above multi-step groove structure, knot termination extension structure in the first semiconductor layer, and knot termination extension structure is located at the lower section of multi-step groove structure, knot termination extension structure surrounds multi-step groove structure；The active area in the first semiconductor layer is arranged at, the active area is abutted with knot termination extension structure.The present invention adds multi-step structure on the basis of conventional planar knot termination extension structure, change finishes the P N knot patterns in termination extension structure, increase finishes edge, conventional planar knot termination extension Liang Ge corners are alleviated by the introducing multi-peak electric field of portion in the terminal and peak value electric field occurs, alleviation finishes the electric field concentration effect at edge, so as to improve reliability of knot termination extension structure when reversely pressure-resistant.
Description
Technical field
The invention belongs to microelectronics technology, it is related to semiconductor devices terminal structure, many of particularly a kind of carborundum
Rank groove knot termination extension terminal structure and its manufacture method.
Background technology
Carborundum (SiC) has broad stopband (3 times of Si), high heat conductance (3.3 times of Si), critical breakdown electric field high
The advantages of (10 times of Si), saturated electrons mobility high (2.5 times of Si) and high bonding energy, this allows for carbofrax material can
To be perfectly suitable for high-performance (high frequency, high temperature, high power, radioresistance) electronic device.But, because it has higher facing
Boundary's breakdown electric field, the premature breakdown phenomenon needs for causing electric field concentration effect to cause are paid close attention to.The application of terminal structure can
Effectively to alleviate the electric field concentration effect at main knot edge, wherein knot termination extension terminal structure with its end use efficiency higher with compared with
Small terminal area and be widely used.Its operation principle is by tying the completely depleted come balanced termination of terminal inner
The peak value electric field value of inside and outside two edges, and it is optimal that two peak value electric field reaches SiC critical breakdown electric fields together.But
Due to knot termination extension structure be exhaust to come by inside modulated electric fields distribution, the performance of conventional planar knot termination extension structure with
The how rare much relations of the internal quantity of electric charge, therefore its sensitiveness to the quantity of electric charge constrains the reliability of its making devices, leads
Cause made device terminal efficiency not as expected.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of carborundum multi-step groove knot end
End terminal extension structure and its manufacture method, mainly solve conventional planar knot termination extension structure high to the sensitiveness of the quantity of electric charge
Problem.
Specifically, the carborundum multi-step groove knot termination extension terminal structure that the present invention is provided, including：Silicon carbide substrates
Layer；Upper first semiconductor layer of the silicon carbide substrates layer is formed at, first semiconductor layer has the first conduction type；Set
In the multi-step groove structure of first semiconductor layer surface；It is covered in the passivation layer above the multi-step groove structure；
Knot termination extension structure, the knot termination extension structure has the second conduction type, and the knot termination extension structure is located at described
In first semiconductor layer, and positioned at the lower section of the multi-step groove structure, abut the channel side of the multi-step groove structure
Wall and channel bottom are set, and the knot termination extension structure surrounds the multi-step groove structure；Active area, the active area
With the second conduction type, the active area is arranged in first semiconductor layer, and adjacent with the knot termination extension structure
Connect.
Preferably, the material of first semiconductor layer is carborundum lightly doped n type semi-conducting material.
Preferably, the overall width of the multi-step groove structure is 10 μm~500 μm.
It is highly preferred that the overall width of the multi-step groove structure is 100 μm~300 μm.
It is highly preferred that every one-level step depth of the multi-step groove structure is 0.6~1 μm, width etc. between each step
Anomaly point.
It is highly preferred that the multi-step groove structure is shaped as unilateral three layers of step of three layers of step or bilateral.
Preferably, the depth of the knot termination extension structure is being 0 μm~1 μm.
Preferably, present invention also offers the preparation method of the carborundum multi-step groove knot termination extension terminal structure,
It is characterized in that comprising the following steps：
S1：By being epitaxially-formed the first semiconductor layer with the first conduction type on silicon carbide substrates layer；
S2：Mask layer and photoetching perforate are formed in the first semiconductor layer surface, channel side is controlled by plasma etching
Wall and bottom angle, form multi-step groove structure；
S3：Cleaning mask layer, forms new mask layer, by multi-step groove structure in the first semiconductor layer surface
Ion implanting is carried out at groove and forms the knot termination extension structure with the second conduction type, and ion note is carried out in groove side
Enter to form active area；
S4：Carbon film protection is carried out in flute surfaces, line activating is entered to injection ion by high annealing；
S5：Removal carbon film, forms insulating passivation layer above groove.
The carborundum multi-step groove knot termination extension terminal structure that the present invention is provided, in conventional planar knot termination extension knot
Multi-step structure is added on the basis of structure, change finishes the P-N junction pattern in termination extension structure, and increase finishes edge,
Conventional planar knot termination extension Liang Ge corners are alleviated by the introducing multi-peak electric field of portion in the terminal and peak value electric field occurs, delayed
Solution finishes the electric field concentration effect at edge, so as to improve reliability of knot termination extension structure when reversely pressure-resistant.
Brief description of the drawings
Fig. 1 is the carborundum multi-step groove knot termination extension terminal structure generalized section that the embodiment of the present invention 1 is provided；
Fig. 2 is the carborundum multi-step groove knot termination extension terminal structure generalized section that the embodiment of the present invention 2 is provided；
Fig. 3 is the carborundum multi-step groove knot termination extension terminal structure generalized section that the embodiment of the present invention 3 is provided.
Specific embodiment
In order that those skilled in the art more fully understand that technical scheme can be practiced, with reference to specific
The invention will be further described for embodiment, but illustrated embodiment is not as a limitation of the invention.
A kind of carborundum multi-step groove knot termination extension terminal structure, including：Silicon carbide substrates layer 101；It is formed at carbon
First semiconductor layer 102 on silicon substrate layer 101, the first semiconductor layer 102 has the first conduction type；The first half are arranged to lead
The multi-step groove structure 104 on 102 surface of body layer；It is covered in the passivation layer 105 of the top of multi-step groove structure 104；Knot terminal
Expansion structure 103, knot termination extension structure 103 has the second conduction type, and knot termination extension structure 103 is located at the first semiconductor
In layer 102, and positioned at the lower section of multi-step groove structure 104, abut the trenched side-wall and trench bottom of multi-step groove structure 104
Portion is set, and knot termination extension structure 103 surrounds multi-step groove structure 104；Active area 106, active area 106 has second to lead
Electric type, active area 106 is arranged in the first semiconductor layer 102, and is abutted with knot termination extension structure 103.
Multi-step groove structure 104 is used in the carborundum multi-step groove knot termination extension terminal structure, well solution
Certainly carborundum conventional planar knot termination extension structure its terminal both sides bottom corners electric field in the case of high back voltage is born is too high
And its structure is to dosage excessively sensitive issue.Specifically, being that addition is more on the basis of conventional planar knot termination extension structure
Step groove structure, change finishes the P-N junction pattern in termination extension structure, and increase finishes edge, by the terminal
Portion introduces multi-peak electric field and peak value electric field occurs alleviating conventional planar knot termination extension Liang Ge corners, and alleviation finishes edge
Electric field concentration effect, so as to improve reliability of knot termination extension structure when reversely pressure-resistant.
Technical scheme is specifically illustrated below.
Embodiment 1
A kind of carborundum multi-step groove knot termination extension terminal structure, it is specific as shown in figure 1, including stacking gradually setting
Silicon carbide substrates layer the 101, first semiconductor layer 102 and passivation layer 105, wherein, silicon carbide substrates layer 101 is by doping concentration
5×1018cm-3N-type SiC material constitute, thickness be 400 μm；First semiconductor layer 102 is formed at silicon carbide substrates layer 101
On, the first semiconductor layer 102 has the first conduction type, doping concentration 7 × 1015cm-3, 10 μm of thickness；First semiconductor layer
102 surfaces are provided with multi-step groove structure 104, and the top of multi-step groove structure 104 is coated with passivation layer 105, ties termination extension
Structure 103 ties termination extension structure 103 in the first semiconductor layer 102, and positioned at the lower section of multi-step groove structure 104
With the second conduction type, specifically, the knot termination extension structure 103 abut multi-step groove structure 104 trenched side-wall and
Channel bottom is set, and is passivated layer 105 and is completely covered, and multi-step groove structure 104 is surrounded, 2 μm of 105 thickness of passivation layer,
Active area 106 is arranged in the first semiconductor layer 102, and is abutted with knot termination extension structure 103, and active area 106 has second
Conduction type；
Specifically, as shown in figure 1, the multi-step groove structure 104 is three layers of step of bilateral, the overall width of groove structure 4
It it is 250 μm, the depth per one-level step is 1 μm, the width per one-level step is 50 μm；And tie mixing for termination extension structure 103
Miscellaneous concentration 2 × 1017cm-3, width is 255 μm, and depth is 0.9 μm, depth and the knot termination extension structure 103 of active area 106
Depth is identical, is also 0.9 μm.
The making step of the carborundum multi-step groove knot termination extension terminal structure is specific as follows：
Selection thickness be 400 μm silicon carbide substrates layer 101, the silicon carbide substrates layer 101 by N doping concentrations be 5 ×
1018cm-3N-type SiC material constitute, by being epitaxially-formed with the first conduction type on silicon carbide substrates layer 101
First semiconductor layer 102, first semiconductor layer 102 is lightly doped semiconductor epitaxial layers for carborundum；
SiO is deposited on the surface of the first semiconductor layer 1022Mask layer is formed, perforate forms etch mask layer, by plasma
Body etching control trenched side-wall and bottom angle, form the first order groove structure of multi-step groove structure 104；
Wash surface SiO2, redeposited SiO2Mask layer is formed, and perforate forms etch mask layer, by plasma
Body etches to form second level groove structure；
Wash surface SiO2, redeposited SiO2Mask layer is formed, and perforate forms etch mask layer, by plasma
Body etches to form third level groove structure, completes the making of groove structure；
Wash surface SiO2, redeposited SiO2Mask layer is formed, and perforate forms etch mask layer, by groove
Ion implanting is carried out at the groove of structure 4 and forms the knot termination extension structure 103 with the second conduction type；
Wash injecting mask SiO2, carbon film protection is carried out in flute surfaces, injection ion is entered by high annealing
Line activating, removes carbon film, and insulating passivation layer 6 is formed above groove, that is, complete carborundum multi-step groove knot termination extension end
The making of end structure.
Embodiment 2
A kind of carborundum multi-step groove knot termination extension terminal structure, it is specific as shown in Fig. 2 including stacking gradually setting
Silicon carbide substrates layer the 101, first semiconductor layer 102 and passivation layer 105, wherein, silicon carbide substrates layer by doping concentration be 5 ×
1018cm-3Type SiC material constitute, thickness be 400 μm；First semiconductor layer 102 is formed on silicon carbide substrates layer 101, the
Semi-conductor layer 102 has the first conduction type, doping concentration 1 × 1016cm-3, 5 μm of thickness；The surface of first semiconductor layer 102
Multi-step groove structure 104 is provided with, the top of multi-step groove structure 104 is coated with passivation layer 105, knot termination extension structure 103
In the first semiconductor layer 102, and positioned at the lower section of multi-step groove structure 104, knot termination extension structure 103 has second
Conduction type, specifically, the knot termination extension structure 103 abuts the trenched side-wall and channel bottom of multi-step groove structure 104
Set, and multi-step groove structure 104 is surrounded, 1 μm of 105 thickness of passivation layer, active area 106 is arranged at the first semiconductor layer
In 102, it is passivated layer 105 and is completely covered, and abutted with knot termination extension structure 103, active area 106 has the second conductive-type
Type；
Specifically, as shown in Fig. 2 the multi-step groove structure 104 is unilateral three layers of step, the overall width of groove structure 4
It it is 120 μm, the depth per one-level step is 0.8 μm, the width per one-level step is 40 μm；And tie termination extension structure 103
Doping concentration 1.5 × 1017cm-3, width is 130 μm, and depth is 0.8 μm, depth and the knot termination extension structure of active area 106
103 depth is identical, is also 0.8 μm.
The manufacturing process of the carborundum multi-step groove knot termination extension terminal structure is same as Example 1, herein
Do not do and illustrate one by one.
Embodiment 3
A kind of carborundum multi-step groove knot termination extension terminal structure, it is specific as shown in figure 3, including stacking gradually setting
Silicon carbide substrates layer the 101, first semiconductor layer 102 and passivation layer 105, wherein, silicon carbide substrates layer by doping concentration be 5 ×
1018cm-3N-type SiC material constitute, thickness be 400 μm；First semiconductor layer 102 is formed on silicon carbide substrates layer 101, the
Semi-conductor layer 102 has the first conduction type, doping concentration 5 × 1015cm-3, 15 μm of thickness；The surface of first semiconductor layer 102
Multi-step groove structure 104 is provided with, the top of multi-step groove structure 104 is coated with passivation layer 105, knot termination extension structure 103
In the first semiconductor layer 102, and positioned at the lower section of multi-step groove structure 104, knot termination extension structure 103 has second
Conduction type, specifically, the knot termination extension structure 103 abuts the trenched side-wall and channel bottom of multi-step groove structure 104
Set, and multi-step groove structure 104 is surrounded, 2 μm of 105 thickness of passivation layer, active area 106 is arranged at the first semiconductor layer
In 102, it is passivated layer 105 and is completely covered, and abutted with knot termination extension structure 103, active area 106 has the second conductive-type
Type；
Specifically, as shown in figure 3, the multi-step groove structure 104 is unilateral three layers of step, the overall width of groove structure 4
It it is 300 μm, the depth per one-level step is 0.6 μm, the width per one-level step is 100 μm；And tie termination extension structure 103
Doping concentration 1.2 × 1017cm-3, width is 320 μm, and depth is 1.0 μm, depth and the knot termination extension structure of active area 106
103 depth is identical, is also 1.0 μm.
The manufacturing process of the carborundum multi-step groove knot termination extension terminal structure is same as Example 1, herein
Do not do and illustrate one by one.
Embodiment described above is only the preferred embodiment lifted to absolutely prove the present invention, and its protection domain is not limited
In this.Equivalent substitute or conversion that those skilled in the art are made on the basis of the present invention, in protection of the invention
Within the scope of, protection scope of the present invention is defined by claims.
Claims (8)
1. a kind of carborundum multi-step groove knot termination extension terminal structure, it is characterised in that including：
Silicon carbide substrates layer (101)；
The first semiconductor layer (102) on silicon carbide substrates layer (101) is formed at, first semiconductor layer (102) has
First conduction type；
It is arranged at the multi-step groove structure (104) on the first semiconductor layer (102) surface；
It is covered in the passivation layer (105) above the multi-step groove structure (104)；
Knot termination extension structure (103), knot termination extension structure (103) is expanded with the second conduction type, the knot terminal
Exhibition structure (103) is interior located at first semiconductor layer (102), and positioned at the lower section of the multi-step groove structure (104), it is adjacent
Trenched side-wall and channel bottom by the multi-step groove structure (104) are set, and knot termination extension structure (103) bag
Enclose the multi-step groove structure (104)；
Active area (106), the active area (106) is arranged at described first with the second conduction type, the active area (106)
It is in semiconductor layer (102) and adjacent with knot termination extension structure (103).
2. carborundum multi-step groove knot termination extension terminal structure according to claim 1, it is characterised in that described
The material of semi-conductor layer (102) is carborundum lightly doped n type semi-conducting material.
3. carborundum multi-step groove knot termination extension terminal structure according to claim 1, it is characterised in that described many
The overall width of step groove structure (104) is 10 μm~500 μm.
4. carborundum multi-step groove knot termination extension terminal structure according to claim 3, it is characterised in that described many
The overall width of step groove structure (104) is 100 μm~300 μm.
5. carborundum multi-step groove knot termination extension terminal structure according to claim 3, it is characterised in that described many
Every one-level step depth of step groove structure (104) is that width is equidistantly divided equally between 0.6~1 μm, each step.
6. carborundum multi-step groove knot termination extension terminal structure according to claim 5, it is characterised in that described many
Step groove structure (104) is shaped as unilateral three layers of step of three layers of step or bilateral.
7. carborundum multi-step groove knot termination extension terminal structure according to claim 1, it is characterised in that the knot
The depth of termination extension structure (103) is being 0 μm~1 μm.
8. the preparation method of carborundum multi-step groove knot termination extension terminal structure according to claim 1, its feature
It is to comprise the following steps：
S1：By being epitaxially-formed the first semiconductor layer with the first conduction type in silicon carbide substrates layer (101)
(102)；
S2：Mask layer and photoetching perforate are formed on the first semiconductor layer (102) surface, channel side is controlled by plasma etching
Wall and bottom angle, form multi-step groove structure (104)；
S3：Cleaning mask layer, forms new mask layer, by multi-step groove structure on the first semiconductor layer (102) surface
(104) ion implanting is carried out at groove and forms knot termination extension structure (103) with the second conduction type, and in groove one
Side carries out ion implanting and forms active area (106)；
S4：Carbon film protection is carried out in flute surfaces, line activating is entered to injection ion by high annealing；
S5：Removal carbon film, forms insulating passivation layer (105) above groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611224149.3A CN106783957A (en) | 2016-12-27 | 2016-12-27 | Carborundum multi-step groove knot termination extension terminal structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611224149.3A CN106783957A (en) | 2016-12-27 | 2016-12-27 | Carborundum multi-step groove knot termination extension terminal structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783957A true CN106783957A (en) | 2017-05-31 |
Family
ID=58926584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611224149.3A Pending CN106783957A (en) | 2016-12-27 | 2016-12-27 | Carborundum multi-step groove knot termination extension terminal structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783957A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054195A (en) * | 2017-12-08 | 2018-05-18 | 深圳市晶特智造科技有限公司 | Semiconductor power device and preparation method thereof |
| CN111490124A (en) * | 2020-03-30 | 2020-08-04 | 杭州电子科技大学 | Step-type micro-groove neutron detector and preparation method thereof |
| CN112310195A (en) * | 2020-09-27 | 2021-02-02 | 东莞南方半导体科技有限公司 | Stepped SiC groove field limiting ring terminal structure, preparation method and device thereof |
| CN113053999A (en) * | 2021-03-12 | 2021-06-29 | 深圳方正微电子有限公司 | Metal oxide semiconductor transistor and preparation method thereof |
| CN113284940A (en) * | 2021-05-13 | 2021-08-20 | 乐山无线电股份有限公司 | Semiconductor device for power electronics and manufacturing method thereof |
| CN114300530A (en) * | 2022-03-09 | 2022-04-08 | 芯众享(成都)微电子有限公司 | Junction terminal structure of silicon carbide power device and preparation method thereof |
| WO2023178897A1 (en) * | 2022-03-21 | 2023-09-28 | 苏州东微半导体股份有限公司 | Silicon carbide device terminal structure and manufacturing method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5977605A (en) * | 1995-08-30 | 1999-11-02 | Asea Brown Boveri Ab | SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge |
| CN103460386A (en) * | 2011-04-05 | 2013-12-18 | 三菱电机株式会社 | Semiconductor device and method for producing same |
| CN103915511A (en) * | 2012-12-28 | 2014-07-09 | 现代自动车株式会社 | Schottky barrier diode and method of manufacturing the same |
| CN105470288A (en) * | 2015-10-14 | 2016-04-06 | 西安电子科技大学 | Delta channel doping SiC vertical power MOS device manufacturing method |
| CN205645821U (en) * | 2016-04-18 | 2016-10-12 | 江阴新顺微电子有限公司 | Compound junction termination structure |
-
2016
- 2016-12-27 CN CN201611224149.3A patent/CN106783957A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5977605A (en) * | 1995-08-30 | 1999-11-02 | Asea Brown Boveri Ab | SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge |
| CN103460386A (en) * | 2011-04-05 | 2013-12-18 | 三菱电机株式会社 | Semiconductor device and method for producing same |
| CN103915511A (en) * | 2012-12-28 | 2014-07-09 | 现代自动车株式会社 | Schottky barrier diode and method of manufacturing the same |
| CN105470288A (en) * | 2015-10-14 | 2016-04-06 | 西安电子科技大学 | Delta channel doping SiC vertical power MOS device manufacturing method |
| CN205645821U (en) * | 2016-04-18 | 2016-10-12 | 江阴新顺微电子有限公司 | Compound junction termination structure |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054195A (en) * | 2017-12-08 | 2018-05-18 | 深圳市晶特智造科技有限公司 | Semiconductor power device and preparation method thereof |
| CN111490124A (en) * | 2020-03-30 | 2020-08-04 | 杭州电子科技大学 | Step-type micro-groove neutron detector and preparation method thereof |
| CN112310195A (en) * | 2020-09-27 | 2021-02-02 | 东莞南方半导体科技有限公司 | Stepped SiC groove field limiting ring terminal structure, preparation method and device thereof |
| CN113053999A (en) * | 2021-03-12 | 2021-06-29 | 深圳方正微电子有限公司 | Metal oxide semiconductor transistor and preparation method thereof |
| CN113053999B (en) * | 2021-03-12 | 2023-02-21 | 深圳方正微电子有限公司 | Metal oxide semiconductor transistor and preparation method thereof |
| CN113284940A (en) * | 2021-05-13 | 2021-08-20 | 乐山无线电股份有限公司 | Semiconductor device for power electronics and manufacturing method thereof |
| CN113284940B (en) * | 2021-05-13 | 2023-03-14 | 乐山无线电股份有限公司 | Semiconductor device for power electronics and manufacturing method thereof |
| CN114300530A (en) * | 2022-03-09 | 2022-04-08 | 芯众享(成都)微电子有限公司 | Junction terminal structure of silicon carbide power device and preparation method thereof |
| WO2023178897A1 (en) * | 2022-03-21 | 2023-09-28 | 苏州东微半导体股份有限公司 | Silicon carbide device terminal structure and manufacturing method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106783957A (en) | Carborundum multi-step groove knot termination extension terminal structure and preparation method thereof | |
| CN111081759B (en) | Enhanced silicon carbide MOSFET device and manufacturing method thereof | |
| CN109119463B (en) | Transverse groove type MOSFET device and preparation method thereof | |
| CN103477439A (en) | Semiconductor device and process for production thereof | |
| CN105679816A (en) | Trench gate charge storage type IGBT and manufacturing method thereof | |
| TWI470802B (en) | Trench metal oxide semiconductor transistor device and manufacturing method thereof | |
| CN107464837A (en) | A kind of super junction power device | |
| CN115832057A (en) | Silicon carbide MOSFET device and preparation method thereof | |
| CN108336152A (en) | Groove-shaped silicon carbide SBD device with floating junction and its manufacturing method | |
| CN106783956A (en) | Groove field limiting ring terminal structure and preparation method with side wall variable-angle | |
| CN104425579B (en) | Silicon-on-insulator reverse-conducting lateral insulated gate bipolar transistor and preparation method thereof | |
| CN107393814A (en) | A kind of MOS power devices and preparation method thereof | |
| CN106158927A (en) | A kind of super-junction semiconductor device optimizing switching characteristic and manufacture method | |
| CN110473914B (en) | Preparation method of SiC-MOS device | |
| CN101556967B (en) | Power semiconductor and manufacturing method thereof | |
| CN115632031A (en) | Manufacturing method of planar gate silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) integrated with gate protection mechanism | |
| CN106653827A (en) | Junction terminal expansion terminal structure with variable angle groove and fabrication method of expansion terminal structure | |
| CN206116403U (en) | Optimize super knot semiconductor device of switching characteristic | |
| CN109192780A (en) | A kind of lateral MOSFET device and preparation method thereof | |
| CN108258040A (en) | Igbt with wide band gap semiconducter substrate material and preparation method thereof | |
| TWI668864B (en) | Semiconductor structure with current flow path direction controlling | |
| CN114188400A (en) | NPN power SiGe bipolar transistor and manufacturing method thereof | |
| TW201232781A (en) | Semiconductor device and method for manufacturing same | |
| CN106601805A (en) | High-electron-mobility transistor device and preparation method thereof | |
| CN107393955A (en) | The silicon carbide mos pipe and manufacture method of a kind of high efficiency high-reliability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |