CN106773214A - A kind of display base plate and its manufacture method, display device - Google Patents
A kind of display base plate and its manufacture method, display device Download PDFInfo
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- CN106773214A CN106773214A CN201710002491.7A CN201710002491A CN106773214A CN 106773214 A CN106773214 A CN 106773214A CN 201710002491 A CN201710002491 A CN 201710002491A CN 106773214 A CN106773214 A CN 106773214A
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- underlay substrate
- groove
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- black matrix
- base plate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention discloses a kind of display base plate and its manufacture method, display device, is related to display technology field, the image display quality for improving display device.The display base plate includes underlay substrate and patterned black matrix, the underlay substrate sets fluted, the black matrix is located in the groove, and the black matrix corresponds to the surface of opening of the groove and the flush where the opening of the groove on the underlay substrate.In the display base plate, underlay substrate sets fluted, black matrix is located in groove, and black matrix corresponds to the surface of opening of groove and the flush where the opening of underlay substrate upper groove, therefore, in the functional film layer formed in subsequent technique, the segment difference of regional is smaller, it is also smaller corresponding to the segment difference between the functional film layer of different pixels, such that it is able to improve the image display quality of display device.The display base plate that the present invention is provided is applied in display device.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of display base plate and its manufacture method, display device.
Background technology
Display device is that one kind is used to show word, numeral, symbol, picture, or by word, numeral, symbol and picture
In the device of the picture such as image that is formed of at least two combinations.At present, display device generally includes display base plate, and display base plate leads to
Often include underlay substrate and patterned black matrix, black matrix is arranged on underlay substrate, for shading, prevents bias light from letting out
Leakage, prevents colour mixture and increases colour purity.
At present, black matrix is typically either formed directly on underlay substrate, and black matrix can be higher by and black matrix is set on underlay substrate
Surface, thus, in subsequent technique, the segment difference of for example color film layer regional of functional film layer can be caused inconsistent, especially
Inconsistent corresponding to the segment difference between the functional film layer of different pixels, causing the image display quality of display device reduces.
The content of the invention
It is an object of the invention to provide a kind of display base plate and its manufacture method, display device, for improving display dress
The image display quality put.
To achieve these goals, the present invention provides following technical scheme：
The first aspect of the present invention provides a kind of display base plate, including underlay substrate and patterned black matrix, the lining
Substrate sets fluted, and the black matrix is located in the groove, and the black matrix corresponds to the opening of the groove
Surface and the flush where the opening of the groove on the underlay substrate.
The second aspect of the present invention provides a kind of display device, and the display device is included as described in above-mentioned technical scheme
Display base plate.
The third aspect of the present invention provides a kind of manufacture method of display base plate, for manufacturing as described in above-mentioned technical scheme
Display base plate, the manufacture method of the display base plate includes：
One underlay substrate is provided；
Groove is formed on the underlay substrate；
Patterned black matrix is formed on the underlay substrate, the black matrix is located in the groove, and described black
Matrix corresponds to the surface of opening of the groove and the flush where the opening of the groove on the underlay substrate.
In the display base plate that the present invention is provided, underlay substrate sets fluted, and black matrix is located in groove, and black matrix pair
Should in the flush where the opening of the surface of the opening of groove and underlay substrate upper groove, therefore, the institute in subsequent technique
In the functional film layer of formation, the segment difference of regional is smaller, also smaller corresponding to the segment difference between the functional film layer of different pixels,
Such that it is able to improve the image display quality of display device.
Brief description of the drawings
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes a part of the invention, this hair
Bright schematic description and description does not constitute inappropriate limitation of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 is the structural representation of display base plate provided in an embodiment of the present invention；
Fig. 2 is the flow chart one of the manufacture method of display base plate provided in an embodiment of the present invention；
Fig. 3 is the flowchart 2 of the manufacture method of display base plate provided in an embodiment of the present invention；
Fig. 4 to Figure 24 is the technical process schematic diagram for manufacturing display base plate in Fig. 1；
Figure 25 is the schematic diagram one when being performed etching to the underlay substrate in Fig. 8；
Figure 26 is the schematic diagram two when being performed etching to the underlay substrate in Fig. 8.
Reference：
10- underlay substrates, 11- grooves,
20- black matrix, 21- first electrodes,
22-P type silicon, 23-N type silicon,
24- second electrodes, 21 '-first electrode layer,
22 '-P-type silicon layer, 23 '-N-type silicon layer,
24 '-the second electrode lay, 30- coloured silk film layers,
31-R filter areas, 32-G filter areas,
33-B filter areas, the photoresists of 40- first,
The photoresists of 50- second, the mask plates of 60- first,
The mask plates of 70- second, 81- etching liquid feed troughs,
82- etches nozzle for liquid.
Specific embodiment
In order to further illustrate display base plate provided in an embodiment of the present invention and its manufacture method, display device, tie below
Figure of description is closed to be described in detail.
Fig. 1 is referred to, display base plate provided in an embodiment of the present invention includes underlay substrate 10 and patterned black matrix 20,
Underlay substrate 10 sets fluted, and black matrix 20 is located in groove, and black matrix 20 corresponds to surface and the lining of the opening of groove
Flush where the opening of the upper groove of substrate 10.
For example, Fig. 1 is referred to, in display base plate provided in an embodiment of the present invention, underlay substrate 10 is provided with recessed
Groove, as shown in figure 1, the opening of groove is positioned at the upper surface of underlay substrate 10 in Fig. 1, the i.e. upper surface of underlay substrate 10 in Fig. 1
Surface where the opening of groove, patterned black matrix 20 is located in groove, and the upper surface of black matrix 20 is black matrix 20
Corresponding to the surface of the opening of groove, the upper surface of black matrix 20 is concordant with the upper surface of underlay substrate 10.
Therefore, in display base plate provided in an embodiment of the present invention, underlay substrate 10 sets fluted, and black matrix 20 is located at recessed
In groove, and black matrix 20 corresponds to the surface of opening of groove and the flush where the opening of the upper groove of underlay substrate 10,
Therefore, in the functional film layer formed in subsequent technique, the segment difference of regional is smaller, corresponding to the functional membrane of different pixels
Segment difference between layer is also smaller, such that it is able to improve the image display quality of display device.
In addition, in display base plate provided in an embodiment of the present invention, black matrix 20 is arranged in the groove of underlay substrate 10,
Thus can be easier to realize the graph thinning of black matrix 20, such that it is able to improve aperture opening ratio, the contrast of display device.
Furthermore, in display base plate provided in an embodiment of the present invention, black matrix 20 is arranged in the groove of underlay substrate 10,
That is, black matrix 20 is embedded in groove, thus can increase the contact area of black matrix 20 and underlay substrate 10, increase black
Matrix 20 and the adhesiveness of underlay substrate 10, reduce the generation of the phenomenon that black matrix 20 comes off.
When display base plate provided in an embodiment of the present invention is applied to display device, display base plate can be as in display device
Color membrane substrates use, it is also possible to used as the array base palte in display device, in practical application, can be according to actually carrying out
Setting.
Please continue to refer to Fig. 1, in embodiments of the present invention, black matrix 20 includes the first electrode 21, P being cascading
Type semiconductor, N-type semiconductor and second electrode 24, P-type semiconductor and N-type semiconductor collectively form PN junction, first electrode 21 with
The bottom land contact of the groove, and first electrode 21 is transparency electrode.
Specifically, please continue to refer to Fig. 1, black matrix 20 includes the first electrode being cascading in Fig. 1 from the bottom to top
21st, P-type semiconductor, N-type semiconductor and second electrode 24, P-type semiconductor constitute PN junction with N-type semiconductor, that is to say, that at this
In inventive embodiments, black matrix 20 is considered a photovoltaic conversion device, when light irradiation is on PN junction in black matrix 20
When, PN junction then can carry out photovoltaic conversion using light.
When being provided with the display device applications of above-mentioned display base plate when mobile terminal (such as mobile phone, panel computer etc.),
Display base plate provided in an embodiment of the present invention can be used as the color membrane substrates in display device, now, underlay substrate in Fig. 1
10 lower surface can also pass through underlay substrate towards user, the extraneous natural light (such as sunshine, light etc.) of mobile terminal
10 and transparent first electrode 21, it is radiated on the PN junction that P-type semiconductor and N-type semiconductor are constituted, photograph of the PN junction in natural light
Penetrate down, photovoltaic effect occurs, produce electric energy, the electric energy is drawn, you can for the energy consuming components in mobile terminal are powered, for example,
For the battery of mobile terminal charges.
In above-described embodiment, P-type semiconductor can be P-type silicon 22, and N-type semiconductor can be N-type silicon 23, and N-type silicon 23
In doped with phosphorus；First electrode 21 and second electrode 24 are metal electrode or metal conductive oxide electrode.
Please continue to refer to Fig. 1, display base plate provided in an embodiment of the present invention also includes patterned color film layer 30, color film layer
30 are located on underlay substrate 10 and black matrix 20.Specifically, please continue to refer to Fig. 1, patterned black matrix 20 is by substrate in Fig. 1
The upper surface of substrate 10 is divided into multiple transparent areas arranged in arrays, and each transparent area one pixel of correspondence, pixel includes R pictures
Element, G pixels, B pixels, color film layer 30 include R filter areas 31, G filter areas 32 and B filter areas 33, the covering of R filter areas 31 and R pictures
The corresponding transparent area of element, G filter areas 32 cover transparent area corresponding with G pixels, and the covering of B filter areas 33 is corresponding with B pixels
Light area.
The embodiment of the present invention also provides a kind of display device, and the display device includes the display as described in above-mentioned embodiment
Substrate.
The display device had the advantage that relative to prior art with above-mentioned display base plate it is identical, herein no longer go to live in the household of one's in-laws on getting married
State.
Fig. 2 and Fig. 3 is referred to, the embodiment of the present invention also provides a kind of manufacture method of display base plate, for manufacturing as above
The display base plate described in embodiment is stated, the manufacture method of the display base plate includes：
Step S100, one underlay substrate of offer.
Step S200, groove is formed on underlay substrate.
Step S300, patterned black matrix is formed on underlay substrate, black matrix is located in groove, and black matrix correspondence
Flush where the surface of the opening of groove and the opening of underlay substrate upper groove.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment was stressed is the difference with other embodiment.Especially for method reality
Apply for example, because it is substantially similar to device embodiment, so describing fairly simple, related part is referring to device embodiment
Part explanation.
Please continue to refer to Fig. 2 and Fig. 3, in the manufacture method of display base plate provided in an embodiment of the present invention, step S200,
Groove is formed on underlay substrate to be included：
Step S201, the first photoresist is coated on underlay substrate.
Step S202, the first photoresist is exposed.
Step S203, the first photoresist is developed, exposing needs the region to form groove on underlay substrate.
Step S204, the first photoresist to remaining solidify.
Step S205, the region to needing to form groove on underlay substrate perform etching, and form groove.
First photoresist of step S206, removal residual.
Performed etching step S205, the region to needing to form groove on underlay substrate is performed, when forming groove, to lining
The etching liquid that substrate is used when needing the region to form groove to perform etching can be selected according to the material of underlay substrate
Select, for example, underlay substrate is glass substrate, glass substrate is mainly made up of silica (SiO2), now, on underlay substrate
When needing the region to form groove to perform etching, etching liquid can select to be hydrofluoric acid (HF), wherein, silica and hydrofluoric acid
Reaction equation be：
SiO2(s)+6HF(aq)→H2SiF6(aq)+2H2O(l)
Performed etching step S205, the region to needing to form groove on underlay substrate is performed, when forming groove, to lining
When needing the region to form groove to perform etching on substrate, waterfall-type mode or vertical type mode can be used.
Please continue to refer to Fig. 2 and Fig. 3, in the manufacture method of display base plate provided in an embodiment of the present invention, step S300,
Patterned black matrix is formed on underlay substrate to be included：
Step S301, the deposition of first electrode layer on underlay substrate；
Step S302, P-type silicon layer is deposited in first electrode layer；
Step S303, the surface to P-type silicon layer carry out phosphorus diffusion, form N-type silicon layer, and P-type silicon layer shares structure with N-type silicon layer
Into PN junction；
Step S304, the second electrode lay is deposited in N-type silicon layer；
Step S305, the second photoresist is coated on the second electrode layer；
Step S306, the second photoresist is exposed；
Step S307, the second photoresist is developed, expose on the second electrode lay except region corresponding with groove with
Outer region；
Step S308, the second photoresist to remaining solidify；
Step S309, the second electrode lay, N-type silicon layer, P-type silicon layer and first electrode layer performed etching successively, form figure
The black matrix of shape；
Second photoresist of step S310, removal residual；
Step S311, underlay substrate and black matrix are ground, make black matrix correspond to the surface of the opening of groove with
Flush where the opening of underlay substrate upper groove.
In the above-described embodiments, in execution step S309, successively to the second electrode lay, N-type silicon layer, P-type silicon layer and first
Electrode layer is performed etching, when forming patterned black matrix, can when being performed etching respectively to the second electrode lay and first electrode layer
To use wet etching mode, dry etching mode can be used when being performed etching respectively to N-type silicon layer and P-type silicon layer.
Please continue to refer to Fig. 2 and Fig. 3, the manufacture method of display base plate provided in an embodiment of the present invention also includes：
Step S400, patterned color film layer is formed on underlay substrate and black matrix.
In order to be better understood from the manufacture method of display base plate provided in an embodiment of the present invention, 2 to attached below in conjunction with the accompanying drawings
Figure 24 describes the manufacture method of display base plate provided in an embodiment of the present invention in detail.Display base plate provided in an embodiment of the present invention
Manufacture method include：
Step S100, one underlay substrate 10 of offer.Fig. 4 is referred to, underlay substrate 10 can be glass substrate.
Step S201, the first photoresist 40 is coated on underlay substrate 10.Fig. 5 is referred to, underlay substrate is may be set in
10 upper surface sets black matrix 20, then the first photoresist 40, the first photoresist 40 are coated on the upper surface of underlay substrate 10
Can be positive photoresist or negative photoresist.
Step S202, the first photoresist 40 is exposed.Fig. 6 is referred to, when being exposed to the first photoresist 40, can
With the surface by the first photoresist 40 is coated with underlay substrate 10 upward, the first mask plate 60 is placed in the upper of underlay substrate 10
Side, and the first mask plate 60 is just right with underlay substrate 10, wherein, it is coated in the first photoresist 40 of the upper surface of underlay substrate 10
Can be negative photoresist, on the opening of the first mask plate 60 and underlay substrate 10 in addition to the region for needing to form groove 11
Region correspondence；Then irradiation light is opened, the light that irradiation light sends is incident upon the first photoresist through the opening of the first mask plate 60
On 40, now, exposed with the first photoresist 40 in region in addition to the region for needing to form groove 11 on underlay substrate 10
Light.
In actual applications, the first photoresist 40 for being coated in the upper surface of underlay substrate 10 can also be positive-tone photo
Glue, now, the opening of the first mask plate 60 is corresponding with the region for needing to form groove 11 on underlay substrate 10, what irradiation light sent
Light is incident upon on the first photoresist 40 through the opening of the first mask plate 60, with underlay substrate 10 on need the area to form groove 11
The first photoresist 40 in the corresponding region in domain is exposed.
Step S203, the first photoresist 40 is developed, expose the area for needing to form groove 11 on underlay substrate 10
Domain.Fig. 7 is referred to, after completing to the exposure of the first photoresist 40, the first photoresist 40 can be developed, to expose lining
The region to form groove 11 is needed on substrate 10, the first photoresist 40 remained on underlay substrate 10 then protects underlay substrate
The region of groove 11 is not necessarily formed on 10, prevents the region that groove 11 is not necessarily formed on underlay substrate 10 to be etched, wherein, first
When photoresist 40 is positive photoresist, after developing to the first photoresist 40, the first photoresist 40 of residual is not to be exposed
The first photoresist 40；When first photoresist 40 is negative photoresist, after developing to the first photoresist 40, the first of residual
Photoresist 40 is the first photoresist 40 being exposed.
Step S204, the first photoresist 40 to remaining solidify.After developing to the first photoresist 40, can be with
The first photoresist 40 to remaining solidifies, recessed to being not necessarily formed on underlay substrate 10 with the first photoresist 40 for improving residual
The protecting effect in the region of groove 11.
Step S205, to needing the region to form groove 11 to perform etching on underlay substrate 10, form groove 11.Refer to
Fig. 8, after developing to the first photoresist 40, needs the region to form groove 11 to be exposed on underlay substrate 10, to lining
Need the region to form groove 11 to perform etching on substrate 10, form groove 11, wherein, the depth of groove 11 can be according to reality
Border needs to be set.
When needing the region to form groove 11 to perform etching on to underlay substrate 10, various ways can be used, for example,
Figure 24 is referred to, waterfall-type mode can be used, etching device includes etching liquid feed trough 81 and multiple etching nozzle for liquid 82,
Underlay substrate 10 is tiltedly placed on the front of etching nozzle for liquid 82, the surface direction etching with the first photoresist 40 on underlay substrate 10
Nozzle for liquid 82, etches the horizontal positioned of nozzle for liquid 82, and each etching nozzle for liquid 82 and the horizontal range all same of underlay substrate 10, leads to
Overregulate etching liquid feed trough 81 to control concentration, temperature, the service time etc. of etching liquid, by etching nozzle for liquid 82 towards lining
The horizontal-jet etching liquid of substrate 10, and the jet velocity of etching liquid is controlled by adjusting etching nozzle for liquid 82, with to substrate
Substrate 10 applies a horizontal force, and then underlay substrate 10 is performed etching, and depth to groove 11 is controlled.
Figure 25 is referred to, when needing the region to form groove 11 to perform etching on to underlay substrate 10, can also be used
Vertical type mode, etching device includes etching liquid feed trough 81 and multiple etching nozzle for liquid 82, and underlay substrate 10 is vertically in etching
The front of nozzle for liquid 82, the surface with the first photoresist 40 etches nozzle for liquid towards etching nozzle for liquid 82 on underlay substrate 10
82 place obliquely, etch the injection direction of nozzle for liquid 82 towards oblique upper, and each etching nozzle for liquid 82 and underlay substrate 10
Horizontal range all same, concentration, temperature, service time of etching liquid etc. are controlled by adjusting etching liquid feed trough 81, are passed through
Etching nozzle for liquid 82 sprays etching liquid towards underlay substrate 10, and controls the injection of etching liquid by adjusting etching nozzle for liquid 82
Speed, a horizontal force is applied with to underlay substrate 10, and then underlay substrate 10 is performed etching, and depth to groove 11 is entered
Row control.
When needing the region to form groove 11 to perform etching on to underlay substrate 10, the selection of etching liquid can be according to lining
The material of substrate 10 determines, for example, when underlay substrate 10 is glass substrate, glass substrate is mainly by silica (SiO2)
Composition, then etching liquid can select hydrofluoric acid (HF).
First photoresist 40 of step S206, removal residual.Fig. 9 is referred to, after groove 11 is formed, then substrate will be remained in
The first photoresist 40 on substrate 10 is removed, and when will remain in the first photoresist 40 on underlay substrate 10 and removing, can be used
The mode of dry etching.
In order to the details of the embodiment of the present invention is better described, when black matrix 20 is formed, the one of interception underlay substrate 10
Part explains as emphasis.
Step S301, the deposition of first electrode layer 21 ' on underlay substrate 10.Figure 10 is referred to, using sputter coating process
(Sputter techniques), in the upper surface deposition of first electrode layer 21 ' of underlay substrate 10, the material of first electrode layer 21 ' can be
Metal, such as aluminium, copper or alloy etc., the material of first electrode layer 21 ' can also be metal conductive oxide material, such as indium tin
Oxide (Indium Tin Oxides, ITO).
Step S302, the deposition P-type silicon layer 22 ' in first electrode layer 21 '.Refer to Figure 11, using plasma enhancing
Chemical vapour deposition technique (Plasma Enhanced Chemical Vapor Deposition, PECVD) is in first electrode layer
P-type silicon layer 22 ' is deposited on 21 '.
Step S303, the surface to P-type silicon layer 22 ' carry out phosphorus diffusion, form N-type silicon layer 23 ', P-type silicon layer 22 ' and N-type
Silicon layer 23 ' is shared and constitutes PN junction.Refer to Figure 12, using plasma enhancing chemical vapour deposition technique, in P-type silicon layer 22 '
Surface carries out phosphorus diffusion, and the top layer of P-type silicon layer 22 ' is doped with phosphorus, forms N-type silicon layer 23 ', P-type silicon layer 22 ' and N-type silicon layer 23 '
Collectively form PN junction.
Step S304, the deposition the second electrode lay 24 ' in N-type silicon layer 23 '.Figure 13 is referred to, using sputter coating process
The second electrode lay 24 ' is deposited in the upper surface of N-type silicon layer 23 ', the material of the second electrode lay 24 ' can be metal, such as aluminium, copper
Or alloy etc., the material of the second electrode lay 24 ' can also be metal conductive oxide material, such as indium tin oxide (Indium
Tin Oxides, ITO).In practical application, first electrode layer 21 ' can as the negative electrode of PN junction, the second electrode lay 24 '
As the positive electrode of PN junction.
Step S305, the second photoresist 50 is coated on the second electrode lay 24 '.Figure 14 is referred to, first electrode layer is completed
21 ', after the formation of P-type silicon layer 22 ', N-type silicon layer 23 ' and the second electrode lay 24 ', then is coated on the second electrode lay 24 '
Two photoresists 50, the second photoresist 50 can be positive photoresist or negative photoresist.
Step S306, the second photoresist 50 is exposed.Figure 15 is referred to, when being exposed to the second photoresist 50,
The second mask plate 70 can be placed in underlay substrate 10 by the surface that the second photoresist 50 is coated with underlay substrate 10 upward
Top, and the second mask plate 70 is just right with underlay substrate 10, wherein, the second photoresist 50 can be positive photoresist, and second covers
The opening of film version 70 is corresponding with the region on the second electrode lay 24 ' in addition to corresponding to the region of groove 11, now, the second mask
The structure of version 70 is identical with the structure of the first mask plate 60, and the first mask plate 60 can be used as the second mask plate 70；Then
Open irradiation light, the light that irradiation light sends is incident upon on the second photoresist 50 through the opening of the second mask plate 70, now, except with
The second photoresist 50 in region beyond the corresponding region of groove 11 is exposed.
In actual applications, the second photoresist 50 can also be negative photoresist, now, the opening of the second mask plate 70 with
The correspondence of groove 11, the light that irradiation light sends is incident upon on the second photoresist 50 through the opening of the second mask plate 70, with groove 11
The first photoresist 40 in corresponding region is exposed.
In the preferred mode of the embodiment of the present invention one, the polarity phase of the polarity of the first photoresist 40 and the second photoresist 50
Instead, i.e. the first photoresist 40 is negative photoresist, the second photoresist 50 is positive photoresist, or, the first photoresist 40 is for just
Property photoresist, the second photoresist 50 is negative photoresist.It is so designed that, used first is exposed to the first photoresist 40
The structure of mask plate 60, it is identical with the structure that the second used mask plate 70 is exposed to the second photoresist 50, thus,
When manufacturing display base plate provided in an embodiment of the present invention, only a mask plate need to be designed, you can realize to the first photoresist 40
Exposure and the exposure to the second photoresist 50, eliminate the design of multiple mask plates, so as to reduce the manufacture embodiment of the present invention
The cost during display base plate of offer.
Step S307, the second photoresist 50 is developed, exposed on the second electrode lay 24 ' except corresponding with groove 11
Region beyond region.Figure 16 is referred to, after completing to the exposure of the second photoresist 50, the second photoresist 50 can be shown
Shadow, to expose on the second electrode lay 24 ' except the region in addition to the corresponding region of groove 11, remains in the second electrode lay 24 '
On the second photoresist 50 then protect with the corresponding region of groove 11, prevent on the second electrode lay 24 ' with the corresponding area of groove 11
Domain is etched, wherein, when the second photoresist 50 is positive photoresist, after developing to the second photoresist 50, the second of residual
Photoresist 50 is the second photoresist 50 not being exposed；When second photoresist 50 is negative photoresist, the second photoresist 50 is entered
After row development, the second photoresist 50 of residual is the second photoresist 50 being exposed.
Step S308, the second photoresist 50 to remaining solidify.After developing to the second photoresist 50, can be with
The second photoresist 50 to remaining solidifies, to improve the second photoresist 50 of residual on the second electrode lay 24 ' and groove
The protecting effect in 11 corresponding regions.
Step S309, the second electrode lay 24 ', N-type silicon layer 23 ', P-type silicon layer 22 ' and first electrode layer 21 ' carried out successively
Etching, forms patterned black matrix 20.Figure 17 is referred to, the second electrode lay 24 ' is performed etching by the way of wet etching first,
By the second electrode lay 24 ' except being removed with the corresponding region of groove 11, second electrode 24 is formed；Then, Figure 18 is referred to, using dry
The mode at quarter is performed etching to N-type silicon layer 23 ' and P-type silicon layer 22 ', by N-type silicon layer 23 ' except being gone with the corresponding region of groove 11
Remove, form N-type silicon 23, by P-type silicon layer 22 ' except being removed with the corresponding region of groove 11, form P-type silicon 22；Then, figure is referred to
19, first electrode layer 21 ' is performed etching by the way of wet etching, by first electrode layer 21 ' except with the corresponding region of groove 11
Removal, forms first electrode 21.
Second photoresist 50 of step S310, removal residual.Figure 20 is referred to, the etching to first electrode layer 21 ' is completed
Afterwards, then the second photoresist 50 that will be remained on the second electrode lay 24 ' is removed.
Step S311, underlay substrate 10 and black matrix 20 are ground, black matrix 20 is corresponded to the opening of groove 11
Surface and the upper groove 11 of underlay substrate 10 opening where flush.Figure 21 is referred to, using repair technology (repair
Technique) underlay substrate 10 and black matrix 20 are ground, black matrix 20 is corresponded to surface and the substrate of the opening of groove 11
Flush where the opening of the upper groove 11 of substrate 10, i.e. make the upper surface of black matrix 20 and the upper surface of underlay substrate 10
Concordantly.
Step S400, patterned color film layer 30 is formed on underlay substrate 10 and black matrix 20.Color film layer 30 is filtered including R
Light area 31, G filter areas 32 and B filter areas 33, when color film layer 30 is formed, refer to Figure 22, can first in the He of underlay substrate 10
R filter areas 31 are formed in black matrix 20；Then, Figure 23 is referred to, then G filter areas is formed on underlay substrate 10 and black matrix 20
32；Then, Figure 24 is referred to, then B filter areas 33 is formed on underlay substrate 10 and black matrix 20.In embodiments of the present invention,
When color film layer 30 is formed, R filter areas 31 are initially formed, re-form G filter areas 32, eventually form B filter areas 33, and actually should
In, when color film layer 30 is formed, the formation order of R filter areas 31, G filter areas 32 and B filter areas 33 is included but is not limited to
State order.
In the description of above-mentioned implementation method, specific features, structure, material or feature can be at any one or many
Combined in an appropriate manner in individual embodiment or example.
The above, specific embodiment only of the invention, but protection scope of the present invention is not limited thereto, and it is any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all contain
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of display base plate, it is characterised in that including underlay substrate and patterned black matrix, the underlay substrate is provided with
Groove, the black matrix is located in the groove, and the black matrix corresponds to the surface of the opening of the groove and the lining
Flush on substrate where the opening of the groove.
2. display base plate according to claim 1, it is characterised in that the black matrix includes be cascading first
Electrode, P-type semiconductor, N-type semiconductor and second electrode, the P-type semiconductor collectively form PN junction with the N-type semiconductor,
The first electrode is contacted with the bottom land of the groove, and the first electrode is transparency electrode.
3. display base plate according to claim 2, it is characterised in that the P-type semiconductor is P-type silicon, the N-type is partly led
Body is N-type silicon, doped with phosphorus in the N-type silicon；
The first electrode and the second electrode are metal electrode or metal conductive oxide electrode.
4. display base plate according to claim 1, it is characterised in that the display base plate also includes patterned color film
Layer, the color film layer is located on the underlay substrate and the black matrix.
5. a kind of display device, it is characterised in that the display device includes the display base as described in Claims 1 to 4 is any
Plate.
6. a kind of manufacture method of display base plate, it is characterised in that for manufacturing the display as described in Claims 1 to 4 is any
Substrate, the manufacture method of the display base plate includes：
One underlay substrate is provided；
Groove is formed on the underlay substrate；
Patterned black matrix is formed on the underlay substrate, the black matrix is located in the groove, and the black matrix
The surface of opening corresponding to the groove and the flush where the opening of the groove on the underlay substrate.
7. the manufacture method of display base plate according to claim 6, it is characterised in that the shape on the underlay substrate
The step of into groove, includes：
The first photoresist is coated on the underlay substrate；
First photoresist is exposed；
First photoresist is developed, the region for needing to form the groove on the underlay substrate is exposed；
First photoresist to remaining solidifies.
To needing the region to form the groove to perform etching on the underlay substrate, the groove is formed；
Remove first photoresist of residual.
8. the manufacture method of display base plate according to claim 7, it is characterised in that the underlay substrate is glass base
Plate, during to needing the region to form the groove to perform etching on the underlay substrate, etching liquid is hydrofluoric acid；
During to needing the region to form the groove to perform etching on the underlay substrate, using waterfall-type mode or vertical type
Mode.
9. the manufacture method of display base plate according to claim 6, it is characterised in that the shape on the underlay substrate
The step of into patterned black matrix, includes：
The deposition of first electrode layer on the underlay substrate；
P-type silicon layer is deposited in the first electrode layer；
Surface to the P-type silicon layer carries out phosphorus diffusion, forms N-type silicon layer, and the P-type silicon layer shares structure with the N-type silicon layer
Into PN junction；
The second electrode lay is deposited in the N-type silicon layer；
The second photoresist is coated on the second electrode lay；
Second photoresist is exposed；
Second photoresist is developed, is exposed on the second electrode lay in addition to region corresponding with the groove
Region；
Second photoresist to remaining solidifies；
The second electrode lay, the N-type silicon layer, the P-type silicon layer and the first electrode layer are performed etching successively, is formed
The patterned black matrix, wherein, using wet when being performed etching respectively to the second electrode lay and the first electrode layer
Quarter mode, when being performed etching to the N-type silicon layer and the P-type silicon layer use dry etching mode；
Remove second photoresist of residual；
The underlay substrate and the black matrix are ground, the black matrix is corresponded to the surface of the opening of the groove
With the flush where the opening of the groove on the underlay substrate.
10. the manufacture method of display base plate according to claim 6, it is characterised in that the manufacturer of the display base plate
Method also includes：
Patterned color film layer is formed on the underlay substrate and the black matrix.
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| CN108873605A (en) * | 2018-07-06 | 2018-11-23 | 京东方科技集团股份有限公司 | A kind of nano-imprint stamp and preparation method thereof |
| CN109031764A (en) * | 2018-08-30 | 2018-12-18 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display device |
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Application publication date: 20170531 |